pnccds for High Speed X-ray imaging at experiments at FLASH, LCLS and XFEL

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1 CFEL inside MPI Halbleiterlabor MPI Semiconductor Laboratory pnccds for High Speed X-ray imaging at experiments at FLASH, LCLS and XFEL UNIVERSITÄT SIEGEN NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 1

2 Prepared by 1. MPI-HLL (MPE and MPP) Lothar Strüder, Rainer Richter, Matteo Porro, Florian Schopper, Gabi Schächner, Danilo Miessner, Martina Schnecke, Thomas Lauff, Gerhard Schaller, Norbert Meidinger, Sven Herrmann, Laci Andricek, Gerhard Fuchs, Johannes Treis, Stefan Wölfel, Nils Kimmel, Robert Andritschke, Elsa Lama Vaquero, Zdenka Albrechtskirchinger, Valentin Fedl, Giulio de Vita, Georg Weidenspointner, A. Wassatsch Daniel Pietschner, Johannes Elbs, Olaf Hälker, S. Hasinger, 2. PNSensor Heike Soltau, Robert Hartmann, Peter Lechner, Peter Holl, Rouven Eckhart, Adrian Nicolae, Klaus Heinzinger, Christian Koitsch, Andreas Liebel, Alois Bechteler, Uwe Weichert, Olga Jaritschin, Gerhard Lutz, Sebastian Ihle, Gabriele Signeri, Ivan Ordavo Christian Reich, Christian Thamm, Kathrin Hermenau, Markus Kufner Adrian Niculae, Armin Schön, Barbara Titze 3. Universität Siegen, Universität Heidelberg (U. Pietsch, A. Walenta,. T.Conka, K. Nurdan, P. Fischer, I. Peric, R. Männer, A. Kugel) 4. Politecnico di Milano, INFN (C. Fiorini, A. Castoldi, C. Guazzoni,...) 5. DESY / Hasylab (Hamburg), (H. Graafsma, K. Hansen, C. Reckleben) 6. CFEL ASG (MPI für medizinische Forschung, Kernphysik, MPE,...) (J. Ullrich, I. Schlichting,L.Strüder, R. Moshammer, S.Epp, D. Rolles, A. Rudenko, J. Rost, Simone Techert...) NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 2

DePFETs are being or will be - used from

3 OUTLINE Fully depleted, high speed, monolithic, large format pnccds and DePFETs are being or will be - used from 50 ev to 25 kev for spectroscopic and intensity imaging at the FLASH, Petra III, LCLS and XFEL synchrotrons: SDDs pnccds LSDDs DEPFET APS gatable DEPFETs RNDR, BIB second part first part Conclusion, Summary NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 3

4 Requirements of the FLASH, LCLS and XFEL Integrating Area Detectors FLASH, LCLS + XFEL pnccd and DePFET system single photon resolution yes yes energy range 0.05 < E < 24 (kev) 0.05 < E < 25 [kev] pixel size (µm) (250) sig.rate/pixel/bunch 10 3 (10 5 ) quantum efficiency > 0.8 > 0.8 from 0.3 to 12 kev number of pixels 512 x 512 (min.) 1024 x 1024 and 2048 x 2048 frame rate/repetition rate 10 Hz Hz up to 250 Hz with pnccd XFEL burst mode 5 MHz (3.000 bunches) > 5 MHz (3.000 bunches) with DePFET system Readout noise < 150 e - (rms) < 30 e - (rms) (2 e - possible) cooling possible - 20 o C optimum room temperature possible vacuum compatibility yes yes preprocessing no (yes)? possible upon request NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 4

What is limiting the quantum efficiency? The thickness of Silicon!! Q.E. = 60 % @ 24 kev d = 2 mm Q.E. = 22 % @ 24 kev d = 0.

5 What is limiting the quantum efficiency? The thickness of Silicon!! Q.E. = kev d = 2 mm Q.E. = kev d = 0.5 mm NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 5

6 Monolithic Integration of optical blocking filters Thin entrance window Silicon entrance window with x nm of SiO 2 and y nm of Si 3 N 4 plus z nm of Al (optical shield) optical light attenuation: ev 5 kev NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 6

simulations by Robert Hartmann NDIP09, Aix-les-Bains, 16.

7 Optical properties of the pnccd and DEPFET active pixel sensors Measurement and calculations of optical response simulations by Robert Hartmann NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 7

CCD basics full depletion (50 µm to 500 µm) back

efficiency NDIP09, Aix-les-Bains, 16.- 21. 6.

8 CCD basics full depletion (50 µm to 500 µm) back side illumination radiation hardness high readout speed pixel sizes from 36 µm to 650 µm charge handling: more than 10 6 e - /pixel high quantum efficiency NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 8

pixel volume: 20x40x12 µm 3 1x10 4 µm 3 Doping: 10 2 P per µm 3 CHC = 1 x 10 6 per pixel

9 How many charges can be stored in one pixel? What determines the charge handling capacity in a pixel? pixel volume: 20x40x12 µm 3 1x10 4 µm 3 Doping: 10 2 P per µm 3 CHC = 1 x 10 6 per pixel can be increased by external voltages can be increased by doping NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 9

10 NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 10

11 Recent pnccds fabrications flight type erosita version format: 384 x 384 x 2 pixel area: 8.4 cm cm 2 pixel size: 75 x 75 µm 2 prototype erosita version format: 256 x 256 x 2 pixel area: 3.7 cm cm 2 pixel size: 75 x 75 µm 2 NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 11

12 Measurements with 512x256 FLASH + BESSY NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 12

13 Structure determination with a FEL in our case: Xe nanocluster Molecules atomic resolution Crystal J. Kirz, Nature Physics 2, 799 (2006) Lysozyme R. Neutze, J. Haidu et al., Nature 406, 752 (2000) Radiation damage and Coulomb explosion NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 13

14 FLASH set-up in T.M. Beamline planar detector geometry in reflection mode CCD detector X-ray 90 ev Multilayer X-ray Mirror NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 14

15 Set-up in T.M. FLASH pnccd3 pnccd1 42 o 80 o 10 o 25 o pnccd2 20 o 40 o NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 15

Measurements @ FLASH in March 2008 - single shots - E = 90 ev

9 ev pnccd 1 pnccd 2 pnccd 3 NDIP09, Aix-les-Bains, 16.- 21. 6.

16 FLASH in March single shots - E = 90 ev 25 single ± 1.7 shots e-h pairs ENC = 2.5 e - (rms) FWHM: 38.9 ev pnccd 1 pnccd 2 pnccd 3 NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 16

Langmuir-Blodgett-Film fixed angle of incidence Few minutes counting 1.000 to 10.

000 frames per second typical measurement times: 100 s to 1.

17 Langmuir-Blodgett-Film fixed angle of incidence Few minutes counting to photons per frame 400 to frames per second typical measurement times: 100 s to s position,time and energy resolved photons per spectrum: typ 10 8 α i = 0.8 deg NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 17

pnccd operating parameters and properties Parameter Frame Store pnccd XMM type pnccd pixel size 36 µm, 48 µm, 51 µm and 75 µm 150 µm format 256 2 x2, 264 2 x2, 384 2 x2, 512x1024 64x200, 400x400

18 pnccd operating parameters and properties Parameter Frame Store pnccd XMM type pnccd pixel size 36 µm, 48 µm, 51 µm and 75 µm 150 µm format x2, x2, x2, 512x x200, 400x400 active area (image only) 3.9 cm 2, 1.9 cm 2, 8.3 cm 2, 29 cm 2 3 cm 2, 36 cm 2 sensitive depth 450 µm 300 µm readout noise electrons (rms) 5 electrons (rms) Q.E. 90 % from 0.4 to 11 kev 90 % from 0.4 to 10 kev charge handling 5 x 10 5 electrons per pixel 5 x 10 5 e per pixel 6 kev 1 x x 10-5 E ev, kev --, kev readout time 10 µs or 20 µs per row 25 µs per row pixel rate 13 Mpix or 25 Mpix per second 2.8 Mpix per second frame rate up to 900 fps, 20 fps for erosita 14 fps out-of time events 0.2 % in the case of erosita 6 % power dissipation in FP erosita: 0.5 W per 9 cm W for 36 cm 2 power dissipation per pix. erosita: 0.2 µj per pixel readout 0.33 µj per pixel readout NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 18

19 Detectors for FLASH+LCLS+XFEL+Petra III device fabrication is finished now The full sensitive area of the system is 59 cm 2 with 75 µm pixels, 1024 x outputs CMX CMX CMX CMX transfer of signal charges Chip 1: area 29.5 cm 2 format: 1024 x 512 insensitive gaps: 800 µm hole diameter: 3 mm Chip 2: area 29.5 cm 2 format: 1024 x 512 CMX CMX CMX CMX 16 outputs Full Frame imaging area per chip 512 x 1024 total area per chip: 29.5 cm 2 Total sensitive system area: 59 cm pixel size 75x75 µm 2 readout time per frame: 4 ms i.e. 250 fps can be triggered externally NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 19

pnccd: 1024 x 512, 30 cm 2 Imaging 7.8 x 3.

system delivers 4k x 4k resolution points

20 pnccd: 1024 x 512, 30 cm 2 Imaging 7.8 x 3.7 cm 2 = 29.6 cm 2 75 x 75 µm parallel read nodes 2 e 250 fps for 6 kev X-rays the system delivers 4k x 4k resolution points in all the area with less than one photon per pixel (typ. 90 %) NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 20

FLASH, PETRA III and XFEL systems in 2010/11 16 outputs CMX CMX CMX CMX 16 outputs CMX CMX CMX CMX Chip 1: area 59 cm 2 format: 1024 x 1024 transfer of charges

time: < 8 ms read noise < 15 electrons Chip 1: area 59 cm 2 format: 1024 x 1024 transfer of charges Charge handling capacity: > 1000 photons pp Energy 0.

21 FLASH, PETRA III and XFEL systems in 2010/11 16 outputs CMX CMX CMX CMX 16 outputs CMX CMX CMX CMX Chip 1: area 59 cm 2 format: 1024 x 1024 transfer of charges transfer of charges Chip 1: area 59 cm 2 format: 1024 x x 2048 CCD array (resolution points: 8kx8k) pixel size: 75 x 75 µm 2 total area: 236 cm 2 readout time: < 8 ms read noise < 15 electrons Chip 1: area 59 cm 2 format: 1024 x 1024 transfer of charges Charge handling capacity: > 1000 photons pp Energy 0.1<E<24 kev thickness: 500 µm operation temperature:-10 o C CMX CMX CMX CMX 16 outputs NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 21

esa s XEUS mission in 2019 NDIP09, Aix-les-Bains, 16.- 21. 6.

22 esa s XEUS mission in 2019 NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 22

23 What is the challenge for XFEL Time structure: difference with others Electron bunch trains; up to 3000 bunches in 600 μsec, repeated 10 times per second. Producing 100 fsec X-ray pulses (up to bunches per second). 600 μs 100 ms 100 ms 99.4 ms bunches/s but 99.4 ms (%) no photons 200 ns X-ray photons fs FEL process NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 23

$over outer regions of internal gate; only the fraction below channel steers the transistor current efficiently This arrangement leads to a non linear characteristics The shape of this characteristics$

24 Basic DePFET concept with nonlinear signal compression Internal gate extends below large area source Small signal charge is collected below transistor channel Large signal charges distributed also over outer regions of internal gate; only the fraction below channel steers the transistor current efficiently This arrangement leads to a non linear characteristics The shape of this characteristics can be tuned by the doping profile of the internal gate Clearing electrode is not shown in the picture NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 24

25 SIMBOL-X DePFET Hybrid 3.2 cm NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 25

8.2 cm NDIP09, Aix-les-Bains, 16.- 21. 6.

26 8.2 cm NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 26

Hybrid Pixel Detector Approach with On-Chip Detector Amplification DePMOS Active Pixel Sensor X-rays Connecting Bumps 1 per pixel CMOS Layer Signal

27 Hybrid Pixel Detector Approach with On-Chip Detector Amplification DePMOS Active Pixel Sensor X-rays Connecting Bumps 1 per pixel CMOS Layer Signal processing Digitization Signal storage & output NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 27

28 DePFET system overview NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 28

29 Conclusion and Summary I. Silicon photon detectors are the best choice for large area low noise, high dynamic range, high Q.E. from 50eV to 25keV II. For the 5 Hz, 10 Hz, 60 Hz and 120 Hz operation at FLASH, LCLS, SCSS and EXFEL the pnccd fulfils ALL requirements. Formats of 1024 x 1024 have been successfully fabricated x 2048 systems are foreseen for III. For the 5 MHz operation at EXFEL in the burst mode a new DePFET with analog compression is currently under development. NDIP09, Aix-les-Bains, Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 29

MPI Halbleiterlabor. MPI Semiconductor Laboratory. MPI mf

MPI Halbleiterlabor. MPI Semiconductor Laboratory. MPI mf MPI Halbleiterlabor MPI Semiconductor Laboratory MPI mf LCLS User Workshop, SLAC, Menlo Park, 18. 10. 2008 Lothar Strüder, MPI Halbleiterlabor and Universität Siegen 1 Prepared by 1. MPI-HLL (MPE and MPP)