The Simbol-X. Low Energy Detector. Peter Lechner PNSensor & MPI-HLL. on behalf of the LED consortium. Paris, Simbol-X Symposium. P.
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1 The Simbol-X Low Energy Detector Peter Lechner PNSensor & MPI-HLL on behalf of the LED consortium Simbol-X X Symposium 1
2 LED collaboration K. Heinzinger,, G. Lutz, G. Segneri, H. Soltau PNSensor GmbH & MPI Halbleiterlabor S. Herrmann, T. Lauf, G. Schaller, F. Schopper, L. Strüder MPI für extraterrestrische Physik & MPI Halbleiterlabor detector hardware L. Andricek, R. Richter, M. Schnecke MPI für Physik & MPI Halbleiterlabor J. Treis MPI für Sonnensystemforschung & MPI Halbleiterlabor U. Briel, G. Hasinger, H. Huber, M. Freyberg science, mechanics, calibration MPI für extraterrestrische Physik E. Kendziorra, A. Santangelo, T. Schanz, C. Tenzer PI, science, daq, simulations Institut für Astronomie und Astrophysik Tübingen M. Kuster electronics, simulations Technische Universität Darmstadt J. Wilms data analysis software Friedrich-Alexander-Universität Erlangen-Nürnberg-Bamberg L. Bombelli, C. Fiorini frontend electronics Politecnico di Milano & INFN 2
3 requirements science drivers specifications LED parameters background estimation, field of view format extended objects 12 arcmin 8 x 8 cm² > 7 cm Ø 128 x 128 pixels sensitivity angular resolution pixel size 20 arcsec 625 µm <1.9 mm source identification, energy range thin entrance window overlap with HED kev thickness 450 µm Fe line spectroscopy energy resolution low electronic noise kev 10 el. ENC anti-coincidence min. frametime frame rate 8.000/sec timing studies time resolution window mode 50 µsec 32 pixel rows hard X-ray detector "transparent" monolithic device s/c constraints high temperature -45 C s/c alignment system light blocking filter 3
4 Macro Pixel Detector DEPFET combined sensor & amplifier signal charge collection in internal gate transistor current modulation 300 pa/el. low noise readout on demand DEPFET + Silicon Drift Detector = Macro Pixel scalable pixel size common backside diode thin, homogeneous entrance window fill factor 1 full sensitivity of the silicon body 4
5 what we will have - flight sensor focal plane sensor Z monolithic 6-inch wafer scale device Z pixel size 625 x 625 µm² Z format 128 x 128 pixels 8 x 8 cm² Z quadrant divison individual r/o & control Z FP power < 8W readout modes Z full frame column parallel, bi-directional 128 µsec ' 8.000/sec Z window mode window size 2 x 16 rows no additional hardware window time = 32 µsec 5
6 what we will have - efficiency quantum efficiency entrance window contribution qe 90 % autonomous alignment system optical load > 10 5 ph/pixel/frame light blocking filter 100 nm Al 100 nm 810 nm 6
7 what we will have - electronics quadrant philosophy supply, control and readout by separate units backend electronics design driven by high raw data rate 2 Gbit/sec SEQ - sequencer EPP - event preprocessor offset, gain, common mode correction valid event pattern filter IC - interface controller data compression handover to event processing electronics (EPE) on board data storage telemetry 1 x per orbit pattern reconstruction on ground poster no. 13 by Thomas Schanz /IAAT 7
8 what we have - sensor demonstrator Simbol-X LED demonstrator pixel 500 x 500 µm² format 64 x 64 pixels 3.2 x 3.2 cm² 1 quadrant of the flight detector representative, scalable results frametime 2 msec temperature C to be integrated in Science Verification Model with components of the HED 8
9 what we have - spectroscopy spectroscopy flat field illumination energy resolution 5.9 kev) 127 ev (singles) 135 ev (all events) peak/background ratio 3.000:1 low energy performance pattern statistics 63 % singles 29 % doubles O-K (525 ev) Fe-L ( ev) (Simbol-X 500 ev) (in)homogeneity 0.3 % offset 2.3 % gain 9.6 % noise 9
10 what we have - imaging digital hitmap (photon counts) integrated adu values (accumulated energy) shadow images of a 450 µm thick silicon mask using an 55 Fe source smallest feature: ~ 1 mm 2 x 2 pixel statistics: ~ frames defect-free: no dark pixel, no bright pixel 10
11 what we have - frontend readout options 64 channel amplifier 64/1 analog multiplexer CAMEX / ASTEROID source follower configuration intrinsic speed limitation 8-fold CDS / current (de)integration filter readout time per row 4 µsec (goal) 2 x SWITCHER-II control ASIC VELA 64 channel control chip drain current readout 2 ports / channel supply of switched voltages extremely low noise level high voltage CMOS process > 20 V p-p requires pixel homogeneity current (de)integration filter readout time per row 2 µsec 50 MHz clock new radhard version in design/production 11
12 what we have - frontend 1st test VELA & DEPFET pixel sensor L. Bombelli, C. Fiorini, Politecnico di Milano full 64 channel VELA chip IXO/XEUS prototype sensor 64 x 64 / 75 µm pixel 126 ev 5.9 kev, 4 µsec r/o 140 ev 5.9 kev, 2 µsec r/o 12
13 what we have - mechanical model mechanics construction in final phase mechanical model for vibrational and thermal tests SX-LED mechanical model on vibrational stage 13
14 what we have - radiation hardness radiation hardness 5 y mission, 2 solar-active y protons (NIEL) p/cm² (10 MeV) additional leakage current change of DEPFET characteristics X-rays (& protons) 2 krad change of DEPFET characteristics DEPFET irradiation - 10 MeV protons increase of leakakge current ΔI = RT shift of DEPFET operation voltage ΔV_th < 0.1 ev X-ray irradiation to come 14
15 summary DEPFET technology is ready for the Simbol-X LED flight wafers at the beginning of their production 15
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