Measurement results of DIPIX pixel sensor developed in SOI technology
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1 Measurement results of DIPIX pixel sensor developed in SOI technology Mohammed Imran Ahmed a,b, Yasuo Arai c, Marek Idzik a, Piotr Kapusta b, Toshinobu Miyoshi c, Micha l Turala b a AGH University of Science and Technology Faculty of Physics and Applied Computer Science - Krakow, Poland b Institute of Nuclear Physics Polish Academy of Sciences - Krakow, Poland c Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization(KEK) - Tsukuba, Japan 12 th Pisa Meeting, May, 2012 Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 1 / 29
2 Outline 1 Introduction Silicon-on-insulator Technology DIPIX pixel sensor 2 Study of Pixel Behaviour Long time stability test 3 Laser Measurements Halo Effect Optimization of Back Voltage and Integration time 4 Measurements with Americium source Data Cleaning Signal Clusters and Energy plots Comparison of ENC and SNR for CZ-n and FZ-n 5 Conclusions Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 2 / 29
3 Outline 1 Introduction Silicon-on-insulator Technology DIPIX pixel sensor 2 Study of Pixel Behaviour Long time stability test 3 Laser Measurements Halo Effect Optimization of Back Voltage and Integration time 4 Measurements with Americium source Data Cleaning Signal Clusters and Energy plots Comparison of ENC and SNR for CZ-n and FZ-n 5 Conclusions Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 3 / 29
4 Silicon-on-insulator Technology SOI technology separates devices from the substrate using insulator buried oxide (BOX) layer. The features of SOI technology are: high speed, low power, good radiation hardness. Back gate effect is mitigated by implanting buried P-well (BPW) just below BOX layer. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 4 / 29
5 Lapis 0.2 µm FD-SOI process Process Lapis 0.2 µm FD-SOI CMOS process, 1 Poly, 5 Metal. MIM Capacitor (1.5 ff/µm 2 ), DMOS-Cap SOI wafer Diameter: 200 mmφ, 720 µm thick Top Si : Cz, 18 Ω-cm, 40 nm thick Buried Oxide : 200 nm thick Handle wafer: 1. Cz-n: 700 Ω-cm 2. FZ-n: 7kΩ-cm Backside Process Thinned to 260 µm and Plated with Al (200 nm). Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 5 / 29
6 DIPIX pixel sensor DIPIX is a Dual mode Integration type PIXel with reduced pixel size of 14 µm. Circuit is designed to work both in n-type and p-type substrate. Internal 10-bit Wilkinson type ADC. (not use in this measurements) DIPIX1 DIPIX2 Wafers-Resistivity (k Ω-cm) CZ-n (0.7) CZ-n(0.7) and FZ-n (7) Pixel size (µm) and No. of pixels 14 and 256x and 128x256x2 Chip area and Effective area (mm 2 ) 5x5 and x5 and CDS in Pixel yes yes Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 6 / 29
7 Outline 1 Introduction Silicon-on-insulator Technology DIPIX pixel sensor 2 Study of Pixel Behaviour Long time stability test 3 Laser Measurements Halo Effect Optimization of Back Voltage and Integration time 4 Measurements with Americium source Data Cleaning Signal Clusters and Energy plots Comparison of ENC and SNR for CZ-n and FZ-n 5 Conclusions Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 7 / 29
8 Long time stability test Long time stability test Stability test is to check whether the detector is capable of operating in long run measurements. Test Setup : Parameters DIPIX2 Environment Dark Signal No No. of Frames Integration Time 500µs Scan Time (pixel readout time) 640 ns/pixel RST time without cds and with cds 2040 ns and 2160 ns RSTV for N-type wafer 750mV and 1300mV The Back voltage for CZ-n = 100 V. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 8 / 29
9 Stability Test of CZ-n pixel sensor Figure: Stability test of CZ-n with CDS. (top 3 graphs each with frames measured subsequently and bottom is zoom of initial 1000 frames) Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 9 / 29
10 Stability Test Summary DIPIX is stable and so it may work for long time run. Small initial changes in number of counts may probably be reduced by maintaining a constant temperature. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 10 / 29
11 Outline 1 Introduction Silicon-on-insulator Technology DIPIX pixel sensor 2 Study of Pixel Behaviour Long time stability test 3 Laser Measurements Halo Effect Optimization of Back Voltage and Integration time 4 Measurements with Americium source Data Cleaning Signal Clusters and Energy plots Comparison of ENC and SNR for CZ-n and FZ-n 5 Conclusions Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 11 / 29
12 Laser Setup Laser Details Laser Driver PDL 800-D Frequency 80 MHz Modes of operation Pulse Laser Head wavelength 1060 nm 3D setup X,Y and Z Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 12 / 29
13 Halo in FZ-n pixel sensor Figure: Back voltage was set to a) Left fig. 10V, b) Right fig. 70V Halo Effect A bunch of pixels around the hit pixel(halo) having 12 to 15 % of hit pixel count is seen. This problem is seen in both sensors. The worse is FZ-n. Halo depends mostly on Laser Intensity (increase with intensity). Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 13 / 29
14 Optimization of Back Voltage and Integration time Parameters CZ-n Type FZ-n Type Back Voltage 80V 60V Integration Time 100µs 100µs Table: Optimized Back Voltage and Integration Time Optimization The presence of Halo, force us to do the scan of back voltage and Integration time to optimize them in order to reduce halo. Optimization is used to reduce the Halo and spot size. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 14 / 29
15 FZ-n before and after optimization Figure: a) Left fig. Before optimization, b)right fig. After optimization Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 15 / 29
16 Laser Measurements Summary Halo is seen in both sensors and depends mostly on Intensity. Probably Halo is caused by large charge generation disturbing the electric field. Optimized Back voltage and Integration time result in smaller spot size. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 16 / 29
17 Outline 1 Introduction Silicon-on-insulator Technology DIPIX pixel sensor 2 Study of Pixel Behaviour Long time stability test 3 Laser Measurements Halo Effect Optimization of Back Voltage and Integration time 4 Measurements with Americium source Data Cleaning Signal Clusters and Energy plots Comparison of ENC and SNR for CZ-n and FZ-n 5 Conclusions Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 17 / 29
18 Americium Radiation Data and Setup Am-241 source is used with the activity of 10mCi(=370MBq). The rate of incident photons is low. Setup is placed in black box. Radiation Data Type Energy Gamma 59.5KeV Gamma 26.3KeV Gamma 13.9KeV Cu L x-ray 8.01KeV Np L-x-ray 17.7KeV Np L-x-ray 20.7KeV Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 18 / 29
19 Data Cleaning using CZ-n pixel sensor Integration Time and Scan Time 100 µs, 640 ns/pixel Back Voltage 80 V RSTV and RST time 750 mv, 2040 ns Run Mode calib data and signal data Calib run (dark, no source) 500 events Am-241 run (dark) events Table: Parameter setting of sensor CZ-n Type Noise cleaning Calib data is used to remove bad pixels. Bad frames and common mode noise are removed from both calib and Am-241 run. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 19 / 29
20 Data Cleaning Sensor = CZ-n, CDS = off, No. of frames = Am-241 and 500 calib runs. Back voltage = 80 V, IT = 100 µs, Pixel scan time = 640 ns. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 20 / 29
21 Clustering Number of pixels in a cluster depends on deposited energy. Total 4σ threshold is use to get hit pixels and these pixels are used to find the cluster. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 21 / 29
22 CZ-n sensor signal Clusters and Energy plots Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 22 / 29
23 ENC and SNR Results CZ N-Type Without CDS Region IT(µs) Noise (ADC) ENC(e ) SNR 59.5KeV (ADC) CZ N-Type With CDS Region IT Noise ENC(e ) SNR 59.5KeV (ADC) FZ N-Type Without CDS Region IT(µs) Noise (ADC) ENC(e ) SNR 59.5KeV (ADC) Summary 1st region is the best of both sensor (ENC=85e and SNR=189 using Am-241 source 59.6keV), 2nd region is having lot of bad and hot pixels. Readout with CDS give similar results. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 23 / 29
24 Outline 1 Introduction Silicon-on-insulator Technology DIPIX pixel sensor 2 Study of Pixel Behaviour Long time stability test 3 Laser Measurements Halo Effect Optimization of Back Voltage and Integration time 4 Measurements with Americium source Data Cleaning Signal Clusters and Energy plots Comparison of ENC and SNR for CZ-n and FZ-n 5 Conclusions Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 24 / 29
25 Conclusions Conclusions DIPIX2 shows long time stable operation. Halo problem seen with laser can be reduced using small intensity and optimized back voltage. Halo is not seen with americium source. CZ-n is having good SNR and ENC (85e ), whereas FZ-n is worse (ENC = 127e ). More study is needed to understand the CDS readout. Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 25 / 29
26 Thanks Thank you for your attention! Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 26 / 29
27 Backup:DIPIX circuit DIPIX Circuit Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 27 / 29
28 Backup: Stability Test of FZ-n Figure: Stability test of FZ-n with CDS. (top 3 graphs each with frames measured subsequently and bottom is zoom of initial 1000 frames) Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 28 / 29
29 Backup: CZ-n before and after optimization Figure: a) Left fig. Before optimization, b)right fig. After optimization Mohammed Imran Ahmed (AGH-UST) Measurement results of DIPIX pixel sensor 12 th Pisa Meeting 29 / 29
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