Okamoto Machine Tool Works, LTD. June 22, th SEMATECH Symposium Japan 1
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1 Okamoto Machine Tool Works, LTD 1
2 Contents Solutions for TSV Wafer Thinning Process (Front Side Via) TSV Wafer Thinning Challenges Process Improvement (4-years Development) TSV Wafer Thinning Tool (TSV300) Conclusion 2
3 Solutions for TSV Wafer Thinning Process (Front Side Via Process) 1. Coarse Grinding 2. Edge Trimming 3. Fine Grinding 4. Stress Relief or Via Leveling 5. Via Protrusion 3
4 Grinding CMP TSV Wafer Thinning Challenges Cu/Si Grinding: Low Cu Damage Wheel and Process Edge Trimming: Non-Chip Process Si Thickness Control: Top Wafer Measurement Flat Cu Via: Cu/Barrier/Oxide/Si Same Rate CMP Protrusion Cu Via: High Aspect Ratio Via CMP Post CMP Cleaning: Low Particle and Low Metal Contamination Productivity Reduce Down Time: Easy Pad Exchange System Increase Throughput: Time Balance Control 4
5 Cu/Si Grinding (Wheel Improvement) Roughness(Ra) Cu : 31nm Si : 23nm Conventional Wheel Okamoto Developed Wheel 5
6 Edge Trimming (Inspection Data) 6
7 Thickness Control (Contact Gauge Issue) Thickness Variation Support Wafer(Glass) :10μm Glue : 10μm BG Tape : 6μm Share 100% After Grinding Top Si Variation= 15μm BG Tape 7
8 Thickness Control (Non-Contact Gauge) Top Wafer Thickness Control by Non-Contact Gauge Function Requirement Spec. Wave Length : 1000~1600nm (IR) Sampling Rate: >100Hz Thickness Range : 10 ~800μm Resolution : 0.01μm Reliability : <1μm (Coarse Grinding) < 0.5μm (Fine Grinding) Sensor and Housing 8
9 Thickness Control (In-Process Data) Coarse Grinding Reliability : ±0.5μm Fine Grinding Reliability : ±0.1μm Edge Trimming(Grinding) Reliability : ±0.2μm 9
10 Thickness Control (Top Si Wafer) After Grinding : ±0.3μm ( Non-Contact IR Gauge Control) After CMP : ±0.4μm (Time Control ) Grinding Target (47.5μm) Polishing Target (45μm) 10
11 High-Accuracy CMP Air-Bag Pressure Method Target Removal 5 µm Target Removal 10 µm Average Removal (µm) Removal Rate (µm/min) WIWNU (k-value %)
12 Wafer Edge Wafer Center Flat Cu Via CMP Step Height : -6~-28nm Dishing : -42~-55nm Step Height : -14~-40nm Step Height : -31~-51nm Step Height : -14~-40nm 12
13 Protrusion Cu Via CMP(Development 1) Large Size Via 30um Okamoto Optimized Pad & Slurry Combination 13
14 Protrusion Cu Via CMP(Development 2) Small Size Via Key Developments: Pad Slurry Recipe Results Aspect Ratio: 0.5 Via Diameter: 8μm Via Height: 4μm 14
15 Protrusion Cu Via CMP (History) Current Requirements Via Diameter: 5 to 8μm Via Protrusion: 3 to 8μm Aspect Ratio: 0.5 to 1.0 Via Diameter : 8um Cu Protrusion : 4um Via Aspect Ratio 15
16 Post CMP Cleaning (Particle Counts) Particle Counts μm μm μm μm μm 16
17 Post CMP Cleaning (Cu Contamination) Measurement Tool : TOF-SIMS Cu Via(Φ50μm, Pitch 200μm) Measurement Spot (Φ30μm) 17
18 Reduce Down Time (Easy Pad Exchange) Q-Chuck Pad Structure Polishing Pad Q-Chuck Adhesion Layer Pet Absorption Layer Q-Chuck Pad Laminate Process Hand Roller Pressure Polishing Pad Q-Chuck Vacuum Contact Air Out Ceramic Plate Peel Strength : >35mN/25mm 18
19 Reduce Down Time (Easy Pad Exchange) Conventional Pad Lamination : Into Air and Retry is N.G De-lamination : Very High Strength Plate Cleaning : Adhesion Removed (Alcohol & Waste) Q-Chuck Pad Lamination : Retry OK,Easy Air Out De-lamination : Easy Peeling for Two Finger Cleaning : Without Cleaning 19
20 TSV Wafer Thinning Tool (TSV300) Concept Integrated Tool for TSV 20
21 TSV300 Process Time 775μm 100μm 60μm 50μm 21
22 Conclusion TSV Thinning Process Development Results (Grinding, Edge Trimming, CMP, Cleaning) Non-Contact In-Process Gauge (Grinding, Edge Trimming and Final Si Mapping) TSV Wafer Thinning Tool (TSV300) Ongoing Developments High-Mesh Grinding Wheel Protrusion CMP (High Aspect Ratio) ILD CMP(After Cu Via Protrusion) 22
23 Thank you very much for your attention!! 23
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