SEMICONDUCTORS MATERIALS AND CERAMICS

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1 TPP CONDUCTORS MATERIALS AND CERAMICS MPS R700 S MPS 2 R300 S MPS 2 R300 DCS MPS R400 DS MPS R400 DS Twin MPS R400 GGP MPS 3HS MPS Twin Solar block Grinder MPS T 500 NANOGRINDER/3 NANOGRINDER 941-3/300 IFG 320 NANOGRINDER/4 Safe handling of thin wafers MULTINANO/3-300 Back to mach. pgr.

Manuel machine to polish semiconductor material Single side polishing of

.....up to 6 diameter Video clip Technical Data Features Polishing plate

of the polishing plate Speed Motor 50-350 rpm Infinitely variable 0,55 kw

2 Manuel machine to polish semiconductor material Single side polishing of Wafers......up to 6 diameter Video clip Technical Data Features Polishing plate Polishing pad Ø 360 mm Ø 350 mm Three phase motor Infinite variable speed of the polishing plate Speed Motor rpm Infinitely variable 0,55 kw Slurry feeding Wafer centering by roller system Vacuum system Noise Space Net weight <67 db(a) 1200 x 542 mm 123 kg Rotating polishing chucks

3 Ideal for the high demands of grinding electronic materials Information Technical data go! Machine features go! TTV Measuring protocol go!

4 Technical Data Chucks 2" 3" 4" 5" 6" 8" Motor 2,2 kw * Spindle speed 2560 min -1 Electronical connection Air Water 3,2 kw 6 bar 4 5 bar Rotary table speed 0 30 min -1 Rotary table 300 mm Precision 3 µm Cup Wheel New vitrified Diamond / CBN Fine height adjustment Range min. step Cooland tank Noise level 175 x 100 x x 40 x mm 1 µm 35 l 67 db(a) MPS 2 R300 S General Space (l x w x h) 950 x 865 x 1730 Weight 600 kg Surface quality *Center grinding

MPS 2 R300 S Machine features Use One-side or back grinding of semiconductor wafers up to 150 mm diameter Application Batch production, research and development departments, where materials have to

5 MPS 2 R300 S Machine features Use One-side or back grinding of semiconductor wafers up to 150 mm diameter Application Batch production, research and development departments, where materials have to be ground with micron precision Accesories Vacuum chucks Diamond grinding wheels Coolant Protective foils for sensitive front side surfaces Characteristics Precision surface grinding machine with automatic grinding cycles and vacuum chuck system MPS 2 R300 S General

6 MPS 2 R300 S TTV Measuring protocol Surface quality MPS 2 R300 S General

7 Safe and Easy of Semiconductor Material Information Technical data + machine features TTV Measuring protocol go! go!

8 Technical Data Chucks 2" 3" 4" 5" 6" 8" Motor Spindle speed Electronical connection Air Water 2,2 kw Infinitely variable 3,2 kw 6 bar 4 5 bar Rotary table speed 0 30 min -1 Rotary table 300 mm Precision 3 µm Cup Wheel New vitrified Diamond / CBN Fine height adjustment Range min. step Cooland tank Noise level 175 x 100 x x 40 x mm 1 µm 35 l 65 db(a) Space (l x w x h) 1400 x 930 x 1760 Weight 780 kg * MPS 2 R300 DCS Machine features Optimized application Production environments where high accuracy is required Application Rough and finish grinding of semiconductor and other materials at highest flatness accuracy Features Fully enclosed grinding area Inprocess gauge Automatic fine infeed PLC-automation Rotary table Vacuum chucks MPS 2 R300 DCS General *Center grinding

9 MPS 2 R300 DCS TTV Measuring protocol Surface quality MPS 2 R300 DCS General

go! TTV Measuring protocol MPS R 400DS + TWIN SPINDLE go!

10 Fully enclosed Area Increased power efficiency Digital control concept Information Technical data + Machine features go! TTV Measuring protocol MPS R 400DS + TWIN SPINDLE go! go! MPS R400DS TWIN: Thinning wafer to 50 µm Safe handling of thin wafers

*Center grinding Technical Data Chucks 2" 3" 4" 5" 6" 8" 28 16 8 5 4 1 Motor Spindle speed Electronical connection Air Water Rotary table speed Rotary table 3,7 kw Infinitely variable 5,5 kw 6 bar 4

11 *Center grinding Technical Data Chucks 2" 3" 4" 5" 6" 8" Motor Spindle speed Electronical connection Air Water Rotary table speed Rotary table 3,7 kw Infinitely variable 5,5 kw 6 bar 4 5 bar rpm 400 mm Precision 2 µm Cup Wheel New vitrified Diamond / CBN Fine height adjustment Range min. step Cooland tank Noise level 200 x 100 x x 34 x mm 1 µm 35 l 65 db(a) Space (l x w x h) 1550 x 1130 x 1890 Weight 950 kg * MPS R400 DS Machine features Application of semiconductor wafer in the range of 50 up to 150 mm diameter Characteristics Designed to take advantage of state-ofthe-art grinding technologies and ergonomics Features Fully enclosed grinding area Diamond grinding wheels Automatic grinding programs PLC-control Measuring unit Minimal TTV s Vacuum chucks Consistent grinding results MPS R400 DS General

12 MPS R400 DS TTV Measuring protocol Surface quality MPS R400 DS General

13 + Twinspindle principle Two grinding wheels on one spindle Unbeatable workpiece geometry High stock removal at finest finishes Advantages No wheel change between roughing and fine finishing Back to MPS R 400 DS Roughing and finishing in one setting No secondary or rechucking of workpiece for fine finishing Shortest changeover times

14 One Machine for Polishing Information Technical data + Machine features go! TTV Measuring protocol go! Video clip

15 Motor MPS R400 GGP Machine features Spindle speed Technical Data Electronical connection Air Rotary table speed Rotary table 3,7 kw Infinitely variable 5,5 kw 6 bar rpm 400 mm Precision 2 µm Cup Wheel New vitrified Diamond / CBN height above RT New vitrified Diamond /CBN height above M. chuck New vitrified Diamond /CBN Fine height adjustment Range min. step Cooland tank Noise level 200 x 100 x x 34 x mm 210 mm 95 mm 160 mm 170 mm 1 µm 35 l 65 db(a) Space (l x w x h) 1550 x 1130 x 1890 Weight 950 kg Application and polishing semiconductor material in one process Characteristics In addition to the MPS R400 DS, this maschine is additionally equiped with a grinding and a polishing spindle Features Fully enclosed grinding area TWIN SPINDLE + diamond grinding wheels Automatic change grinding/polishing PLC-Control Measuring unit Automatic programs Vacuum chucks Minimal TTV s MPS R400 GGP General

16 MPS R400 GGP TTV Measuring protocol (after grinding process) Surface quality MPS R400 GGP General

5 kw 2850 rpm 12 kw Runout rotary table 2 µm wheels CBN/Diamond 350x40x127mm Rotary table Number of chucks Rotary table speed 700 mm 108x2"; 48x3"; 31x4"; 20x5"; 14x6"; 7x8 ; 3x12

17 Characteristics Precision rotary table surface grinding machine with hydrostatically supported rotary table. A concept with infinite possibilities without compromise to precision AC motor Spindle speed Elec. Connection Technical Data 7.5 kw 2850 rpm 12 kw Runout rotary table 2 µm wheels CBN/Diamond 350x40x127mm Rotary table Number of chucks Rotary table speed 700 mm 108x2"; 48x3"; 31x4"; 20x5"; 14x6"; 7x8 ; 3x12 (batch); 1x12 (center) 0-20 rpm Fine Downfeed Range 30 mm Min. step 1 µm Weight Area 3100 kg 3000x2300 mm Surface quality This machine is particularly suited for grinding of wafers in large quantities and for back grinding of very thin wafers The machine can be optimally adapted to each particular application MPS R700S Twin

High Precision even in Large Scale Production Comprehensive accessories optimize the machine use over a wide range of materials and workpieces Technical Data Motor Spindle speed Electronical

18 High Precision even in Large Scale Production Comprehensive accessories optimize the machine use over a wide range of materials and workpieces Technical Data Motor Spindle speed Electronical connection 4 kw Infinitely variable 6,5 kw Precision 2 µm MPS 3HS Twin Characteristics Cup Wheel New vitrified Diamond / CBN area (l x w) height above Table New vitrified Diamond / CBN height above M.chuck New vitrified Diamond / CBN 250 x 100 x 76 mm 250 x 40 x 76 mm 510 x 230 mm 243 mm 303 mm 128 mm 188 mm Precision surface grinding machine with fully automatic grinding cycles, inprocess gage, vacuum clamping and controllable damage depths. Surface quality Fine height adjustment Range Min. step Coolant tank Noise level 12 mm 1 µm 250 l 67 db(a) Space (l x w x h) 2900 x 2000 Weight 1100 kg

Ingot face grinding machine, special designed for facing silicon ingots Mechanical

grinding cycles Technical data A.C. motor 4 kw Spindle speed max.

350 mm Speed 300 mm/min Workpiece clamping max.

±10 Adjustment vertical ±7 Adjustment cross 30 mm Main slide Stroke 200 mm Speed 1000

19 Ingot face grinding machine, special designed for facing silicon ingots Mechanical clamping Diamond grinding wheel PLC-control Automatic fine infeed system Programmable grinding cycles Technical data A.C. motor 4 kw Spindle speed max.1500 rpm Accuracy 1 µm Diamond grinding wheel Diameter 432 mm rim 10 mm head Stroke 350 mm Speed 300 mm/min Workpiece clamping max. Ingot size(ø x l) 320 x 610 mm Adjustment horiz. ±10 Adjustment vertical ±7 Adjustment cross 30 mm Main slide Stroke 200 mm Speed 1000 mm/min Fine infeed Stroke 450 mm Accuracy 1 µm Speed mm/min Min. Step 1 µm Hydraulic system Pump 2.2 kw Volume of tank 25 l Pressure 25 bar Space app x 2000 mm Weight ca. 2100kg

G&N Twinspindle Twinspindle principle Roughing

spindle Roughing and finishing in one setting High

geometry No wheel change between roughing and fine

fine finishing shortest change-over times Twinspindle

20 G&N Twinspindle Twinspindle principle Roughing Finishing with Twinspindle Two grinding wheels on one spindle Roughing and finishing in one setting High stock removal at finest finishes Unbeatable workpiece geometry No wheel change between roughing and fine finishing No secondary or rechucking of workpiece for fine finishing shortest change-over times Twinspindle with polygon wheels MPS R400DS Twin MPS R400GGP Twin MPS 3HS MPS R700S

21 Surface quality diagram Average Ra.-value of the grinding wheels [Å] Steel Ha.-Metal Alu Ceramic Al 2 O 3 Glass Si # # D3 100 D7K D15K D15M 1000 D20K D20M D25K 1100 D25M D35K D35M 1750 D46K D46M D76K D76M D91K D91M D107K D107M D126K D126M B30K B46K B76K B107K B126K A46J14 EK Sub surface damage SC Values in µm Index

22 Surface quality diagram Average Ra.-value of the grinding wheels [ µm] Steel Ha.-Metal Alu Ceramic Al 2 O 3 Glass Si # ,0025 # ,004 D 3 0,01 D7K 0,005 0,002 0,016 D15K 0,009-0,017 0,01-0,07 0,02-0,08 D15M 0,1 D20K D20M D25K 0,11 D25M D35K D35M 0,175 D46K 0,009-0,02 0,08-0,2 0,28-0,35 0,07-0,13 0,1-0,25 D46M 0,1-0,15 D76K 0,12-0,18 0,14-0,19 0,05-0,09 D76M D91K 0,23-0,29 0,2-0,6 D91M 0,22-0,28 0,2-0,8 0,2 0,5-1,2 D107K D107M D126K 0,18-0,2 0,37-0,4 D126M 0,5-0,8 B30K 0,04-0,08 0,06 B46K 0,12-0,15 0,25-0,28 0,27-0,3 B76K 0,09-0,13 B107K 0,1-0,15 B126K 0,12-0,15 0,25-0,28 0,27-0,29 1A46J14 0,6-1,5 EK120 0,23-1,0 SC320 0,06-0,16 Values in Å Sub surface damage

23 Sub surface Damage Schleifscheibe Damagetiefe D µm D 25 M µm D 3 M 2 µm # ,8 µm # ,5 0,75 µm # 8000 <0,4 µm (0,25µm) Details about the sub surface damage problem INDEX

24 Machining of the surface of single crystal silicon wafer by lapping or grinding leads to crystal damages. These damages are not only on the crystal surface but also in a area beyond the surface (Sub Surface Damage, HD). Usually the first three areas (polycrystalin, cracks, transition) are called SUB SURFACE DAMAGE. HD The sub surface damage area must be removed by etching and CMP before building chips on the wafer surface. Important is how deep the sub surface damage is reaching into the silicon. There are big differences between the two main machining principes, grinding and lapping. Next Back

25 Lapping F F Bonded grain Main force F parallel to the surface Anisotropic surface with grinding traces Rolling grain Main force F orthogonal to the surface Isotropic surface Next Back

The sub surface damage can only be compared when

lapping) The figures show that grinding leads to

26 The sub surface damage can only be compared when you look at the same grain size! (D46 slicing, D46 grinding, SiC lapping; D15A grinding, SiC F600 lapping; D7 grinding, FO1200 lapping) The figures show that grinding leads to smaller (approx. 50% or less) sub surface damage than lapping! Back

Super finishing of mono+polycrystalline silicon blocks for solar wafer Machine MPS 3-134 n n n n n n Prepared for robot-loading of blocks

chamferring of the edges and grinding of the faces in the same clamping position (no rechucking) Automatic handling (loading, unloading,

27 Super finishing of mono+polycrystalline silicon blocks for solar wafer Machine MPS n n n n n n Prepared for robot-loading of blocks Main grinding spindle with combiwheel D46/D15 Second grinding spindle for simultaneously chamferring the edges of the block. chamferring of the edges and grinding of the faces in the same clamping position (no rechucking) Automatic handling (loading, unloading, turning) of the block. Automatic grinding process High precision fully automatic flat grinding machine with oscillating table and two spindles process/technical data

x 156 mm block length 180-265 mm Flat gringing spindle AC motor 7.5 kw Speed 1430 rpm Combiwheel D46/D15 Chamferring spindle AC motor 2.

28 High precision solar block grinding process process D46 first 1. grinding step D15 sec 2. grinding step 3. grinding step 4. grinding step block turning 90 block turning 90 block turning 90 Video Roughing Finishing Chamferring Specification Technical Data block diameter 156 x 156 mm block length mm Flat gringing spindle AC motor 7.5 kw Speed 1430 rpm Combiwheel D46/D15 Chamferring spindle AC motor 2.2 kw Speed 3000 rpm Combiwheel D46/15 Block clamping Vacuum Block handling Pneumatic El. connection 10 kw Water 80l/h Air 15m³/h Weight 1600 kg Footprint 3000x 2100 mm Height 2440 mm results

29 Cracking reduction rate (%) results The diagram shows the decrease-of-breaking rate of the solar wafers vs. the surface quality of the solar blocks before sawing Surface roughness Ry (µm) The strong reduction of the breaking rate can be explained as follows. Surface damages on the block faces, which are the major cause of breaking are removed by the fine grinding process. Back to MPS 3-134

DISKUS Double-Face-Grinding-Machines. Series: DDS 457 XR DDS 600 XR DDS 750 XR

DISKUS Double-Face-Grinding-Machines Series: DDS 457 XR DDS 600 XR DDS 750 XR DDS 457 600 750 XR Three grinding methods meeting different production problems: 1. Through-feed grinding For large mass-production