0.156(3.95) 0.151(3.85) Symbol BVDSS VGS ID -9.5 A IDM -160 A. EAS mj TSTG

Size: px
Start display at page:

Download "0.156(3.95) 0.151(3.85) Symbol BVDSS VGS ID -9.5 A IDM -160 A. EAS mj TSTG"

Transcription

1 M5P3Q8-HF P-hannel RoH evice Halogen Free Features - imple drive requirement - Low on-resistance - Fast switching speed Mechanical data.2(5.).89(4.8).(.25).8(.9).65(.65).57(.45) - Epoxy : UL 94- rated flame retardant. - ase :, molded plastic. - Lead : Pure tin plated..56(3.95).5(3.85).244(6.2).228(5.8).2(5.).88(4.8).8(.2).(.5) ircuit diagram (.32).48(.22).9(.47).4(.37).28(.7).(.3) G G : Gate : ource : rain.53(3.88).47(3.74) imensions in inches and (millimeter) bsolute Maximum Ratings (at Ta=25 unless otherwise noted) Parameter ymbol alue Unit rain-source breakdown voltage B -3 Gate-source voltage G ±25 ontinuous drain T=25 I -5 ontinuous drain T= I -9.5 Pulsed drain current (Note ) IM -6 valanche current I -5 valanche L=.mH, I=-5, RG=25Ω E.25 mj Power dissipation (Note 2) T=25 3. P T=.2 W Operating junction temperature range TJ -55 to +5 torage temperature range TTG -55 to +5 Note:. Pulse width limited by maximum junction temperature. 2. urface mounted on in² copper pad of FR-4 board, t s. RE: Page

2 Electrical haracteristics ( T=25 unless otherwise noted) Parameter ymbol onditions Min Typ Max Unit tatic rain-source breakdown voltage Gate-source threshold voltage B G(th) G =, I = -25µ = G, I = -25µ Gate-source leakage IG G = ±25, = ± n Zero gate voltage drain current I I = -24, G = = -2, G =, TJ = µ I = -5, G = rain-source on-state resistance (Note ) R(on) I = -, G = mω I = -, G = Forward transconductance (Note ) GF = -5, I = ynamic Input capacitance ciss 422 Output capacitance oss = -5, G =, f = MHZ 498 pf Reverse transfer capacitance rss 442 Turn-on delay time (Note &2) td(on) 2 Turn-on r ise time (Note &2) Turn-off delay time (Note &2) tr td(off) = -5, G = - I = -5, RG = 3Ω 9 57 n Turn-off fall time (Note &2) tf 22 Total gate charge (Note &2) Qg = -5, I = -5, G = 56 Total gate charge (Note &2) Gate-soutce charge (Note &2) Gate-drain charge (Note &2) Qg Qgs Qgd = -5, I = -5, G = 4.5 = -5, I = -5, G = n Gate resistance Rg G = 5m, =, f = MHZ 3 Ω ource-rain iode ontinuous souce-drain diode current Pulse diode forward current (Note 3) I - IM -4 Body diode voltage (Note ) IF = I, G = Reverse recovery time trr 32 n IF = -, dlf/dt = /µs Recovered charge Qrr 26 n ource-rain iode Thermal resistance RΘJ RΘJ Junction to case Junction to ambient (Note 4) /W Notes:. Pulse test: Pulse width 3µs, uty cycle 2% 2. Independent of operating temperature 3. Pulse width limited by maximum junction temperature. 4. W width mounted on a in² pad of 2 oz copper, t s; 25 /W when mounted on minimum copper pad. RE: Page 2

3 RTING N HRTERITI URE (M5P3Q8-HF) rain urrent, -I () Fig. - Typical Output haracteristics G=-4 G=-,-9,-8,-7, -6,-5 G=-3 2 G= rain-ource oltage, - () tatic rain-ource On-tate Resistance, R(ON) ( mω ) Fig.2 - tatic rain-ource On-tate Resistance rain urrent G=-3. rain urrent, -I () G=-4.5 G=- 5 Fig.3 - tatic rain-ource On-tate Resistance Gate-ource oltage Fig.4 - apacitance rain-ource oltage tatic rain-ource On-tate Resistance, R(ON), (mω) I=-5 I=- apacitance, J (pf) iss rss oss Gate-ource oltage, -G (). rain-ource oltage, - () Fig.5 - Forward Transfer dmittance vs rain urrent Fig.6 - Gate harge haracteristics Forward Transfer dmittance, GF (). =-5 Pulsed Ta=25.. Gate-ource oltage, -G () =-5 8 =-5 6 =- 4 2 I= rain urrent, -I () Total Gate harage, Qg (n) RE: Page 3

4 Reel Taping pecification P P d T F E W P 2 W YMBOL B d ±. 5.2 ±. 2. ± ±.. ±.5 3. ± ±.4.25 ±.4.83 ± ± ±.2.52 ±.8 YMBOL E F P P P W W.75 ±. 5.5 ±.5 8. ±. 4. ±. 2. ±.5.69 ±.4.27 ±.2.35 ±.4.57 ±.4.79 ± RE: Page 4

5 Marking ode Part Number Marking ode M5P3Q8-HF Product type marking code Pin uggested P Layout IZE B.6.24 B.52.6 E.27.5 E tandard Packaging ase Type REEL ( pcs ) REEL PK Reel ize 2,5 3 RE: Page 5

G : GATE S : SOURCE D : DRAIN. Symbol VDS VGS. Avalanche Current EAS EAR TSTG

G : GATE S : SOURCE D : DRAIN. Symbol VDS VGS. Avalanche Current EAS EAR TSTG M25N3Q-HF N-hannel RoH evice Halogen Free Features - ingle rive Requirement..2(5.).5(4.7).(.25).7(.7) - Low On-resistance. - Fast witching haracteristic. - ynamic dv/dt rating..57(4.).5(3.).244(6.2).22(5.)

More information

SMC V N-Channel MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION PART NUMBER INFORMATION

SMC V N-Channel MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION PART NUMBER INFORMATION ECRIPTION The MC4866 is the N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A

N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Features Product ummary Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoH Compliant G 3 G 5 7 V 5 V Q g.5 nc Q gd.7 nc R (on) =.5V 5.7 mω =V. mω V th. V Halogen Free

More information

N-Channel CICLON NexFET Power MOSFETs CSD16410Q5A

N-Channel CICLON NexFET Power MOSFETs CSD16410Q5A C4QA Features Product ummary Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoH Compliant G 2 3 G 4 7 V 2 V Q g 3.9 nc Q gd. nc R (on) =4.V 9. mω =V. mω V th.9 V Halogen

More information

N-Channel CICLON NexFET Power MOSFETs CSD16413Q5A

N-Channel CICLON NexFET Power MOSFETs CSD16413Q5A Features Product ummary Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoH Compliant G 3 G 5 7 V 5 V Q g 9. nc Q gd.5 nc R (on) =.5V. mω =V 3. mω V th. V Halogen Free

More information

SMC4866NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 42A APPLICATIONS PART NUMBER INFORMATION

SMC4866NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 42A APPLICATIONS PART NUMBER INFORMATION MC866NA ingle N-Channel MOFET DECRIPTION MC866 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to

More information

P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM

More information

SMC4734PA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 60A APPLICATIONS PART NUMBER INFORMATION

SMC4734PA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 60A APPLICATIONS PART NUMBER INFORMATION MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

MOSFET SI7129DN (KI7129DN)

MOSFET SI7129DN (KI7129DN) P-Channel SI79N (KI79N) Features -8 (FN) VS (V) =-3V I =-35 A (VGS =-V) RS(ON)

More information

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 23 A TA=70 C 18.5 A

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 23 A TA=70 C 18.5 A MCNA ingle N-Channel MOFET DECRIPTION MC is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

SMC4860NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 50A APPLICATIONS PART NUMBER INFORMATION

SMC4860NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 50A APPLICATIONS PART NUMBER INFORMATION MC86NA ingle N-Channel MOFET DECRIPTION MC86 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 18 A TA=70 C 14 A

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 18 A TA=70 C 14 A MC86NA ingle N-Channel MOFET DECRIPTION MC86 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 33 A TA=70 C 26 A

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 33 A TA=70 C 26 A MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

SMC4732PA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 60A APPLICATIONS PART NUMBER INFORMATION

SMC4732PA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 60A APPLICATIONS PART NUMBER INFORMATION MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

V GS =0V,I D =10µA V DS = 20V, V GS =0V V GS = -8V, V DS =0V. V GS =V DS,I D =50µA V GS = 4.5V, I D = 3.6A V GS = 2.5V, I D = 3.1A V DS =5V,I D = 3.

V GS =0V,I D =10µA V DS = 20V, V GS =0V V GS = -8V, V DS =0V. V GS =V DS,I D =50µA V GS = 4.5V, I D = 3.6A V GS = 2.5V, I D = 3.1A V DS =5V,I D = 3. Features Halogen free available upon request by adding suffix "-HF",3.A, R (ON) =55m @ G =.5 R (ON) =8m @ G =.5 High dee cell design for extremely low R (ON) Rugged and reliable Lead free product is acquired

More information

P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2

P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2 Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68

More information

SMC4636NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 60V, ID = 13A APPLICATIONS PART NUMBER INFORMATION

SMC4636NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 60V, ID = 13A APPLICATIONS PART NUMBER INFORMATION MC3NA ingle N-Channel MOFET DECRIPTION MC3 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

M C C. SI2301A. Features. P-Channel Enhancement Mode Field Effect Transistor SOT-23. Internal Block Diagram

M C C.  SI2301A. Features. P-Channel Enhancement Mode Field Effect Transistor SOT-23. Internal Block Diagram omponents 736 Marilla treet Chatsworth!"# $%!"# I31A Features Halogen free available upon request by adding suffix "-HF" -,-.A, (ON) =1mΩ@ G =-.5 (ON) =15mΩ@ G =-.5 High dee cell design for extremely low

More information

N-Channel MOSFET IRF7413 (KRF7413) Top View. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage

N-Channel MOSFET IRF7413 (KRF7413) Top View. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage SM Type IRF743 (KRF743) SOP- Features VS (V) = 3V I = A (VGS = V) RS(ON) < mω (VGS = V).5.5 S S S G 7 3 4 5. +.4 -. Source Source 3 Source 4 Gate 5 rain rain 7 rain rain Top View Absolute Maximum Ratings

More information

M C C. SI2302A. Features. N-Channel Enhancement Mode Field Effect Transistor SOT-23. Internal Block Diagram

M C C.  SI2302A. Features. N-Channel Enhancement Mode Field Effect Transistor SOT-23. Internal Block Diagram omponents 73 Marilla treet Chatsworth!"# $%!"# I3A Features Halogen free available upon request by adding suffix "-HF",3.A, (ON) =55m @ G =.5 (ON) =8m @ G =.5 High dee cell design for extremely low (ON)

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

mj T STG T J -55 to 150 C Operating Junction Temperature Range Parameter

mj T STG T J -55 to 150 C Operating Junction Temperature Range Parameter AP1R83GMT-HF-3 N-channel Enhancement-mode Power MOFET imple rive Requirement O-8 Compatible with Heatsink Low On-resistance R (ON) 1.9mΩ G RoH-compliant, halogen-free I 17A BV 3V escription Advanced Power

More information

Green. Features 90A 90A. PowerDI S. Pin1. Top View Pin Configuration. Part Number Case Packaging DMT4004LPS-13 PowerDI ,500 / Tape & Reel

Green. Features 90A 90A. PowerDI S. Pin1. Top View Pin Configuration. Part Number Case Packaging DMT4004LPS-13 PowerDI ,500 / Tape & Reel Product ummary Green 4V N-CHANNEL ENHANCEMENT MOE MOFET POWERI Features BV 4V R (ON) Max 2.5mΩ @ V G = V 4mΩ @ V G = 4.5V I T C = +25 C 9A 9A % Unclamped Inductive witching ensures more reliable and robust

More information

AO V P-Channel MOSFET

AO V P-Channel MOSFET 3V PChannel MOFET General escription The AO4413 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as a load

More information

N Channel Enhancement Mode Silicon Gate

N Channel Enhancement Mode Silicon Gate SEMIONDUTOR TEHNIAL DATA Order this document by MGPN6ED/D N hannel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and

More information

WPM3028 WPM3028. Descriptions. Features. Applications. Order information. Typical R DS(on) (mω) V GS =-10V V GS =-5V -30

WPM3028 WPM3028. Descriptions. Features. Applications. Order information. Typical R DS(on) (mω) V GS =-10V V GS =-5V -30 WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET Http://www.sh-willsemi.com V DS (V) Typical R DS(on) (mω) -3 11@ =-1V 15 @ =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field

More information

SMC3535K. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -5.8A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3535K. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -5.8A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS Single P-Channel MOSFET ESCRIPTION SMC33 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RS(ON),

More information

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6 Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.

More information

AO4423/AO4423L 30V P-Channel MOSFET

AO4423/AO4423L 30V P-Channel MOSFET AO3/AO3L 3V PChannel MOFET General escription The AO3/AO3L uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use

More information

V DS. 100% UIS Tested 100% R g Tested

V DS. 100% UIS Tested 100% R g Tested 3V PChannel MOFET General escription The uses advanced trench technology to provide excellent R (ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Product

More information

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401)  Features. Absolute Maximum Ratings Ta = 25 SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38

More information

SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)   Features. Absolute Maximum Ratings Ta = 25 P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S

More information

SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ

SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

More information

AO V P-Channel MOSFET

AO V P-Channel MOSFET 3V PChannel MOFET General escription The AO4435 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 25V gate rating. This device is suitable for use as a load

More information

N-Channel Enhancement Mode Field Effect Transistor Amp 60Volt. Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS 1MΩ) VDGR 60 V VGSS

N-Channel Enhancement Mode Field Effect Transistor Amp 60Volt. Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS 1MΩ) VDGR 60 V VGSS E L E C T R O N I C N7PT N-Channel Enhancement Mode Field Effect Transistor - Amp 6Volt Application -ervomotor control -Power MOFET gate drivers -Other switching applications OT- Feature -mall surface

More information

P-Channel MOSFET KI2955DV. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage. Tstg -55 to 150

P-Channel MOSFET KI2955DV. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage. Tstg -55 to 150 P-Channel ( SOT--6 ) Unit: mm. -. Features 6. VS (V) =-6V I =-. A (VGS =-V) RS(ON) < 9mΩ (VGS =-V) RS(ON) < mω (VGS =-.V) -..6.8 -.. +. -.. -. +. -.. -. -..68 -. G S Absolute Maximum Ratings Ta = Parameter

More information

G D S. Drain-Source Voltage 100. at T =100 C Continuous Drain Current to 150 C Operating Junction Temperature Range -55 to 150 C

G D S. Drain-Source Voltage 100. at T =100 C Continuous Drain Current to 150 C Operating Junction Temperature Range -55 to 150 C AP1T1AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching haracteristics Low Gate harge R DS(ON) 16mΩ G RoHS-compliant, halogen-free I D 9A S BV DSS 1V Description

More information

Advanced Power Electronics Corp.

Advanced Power Electronics Corp. AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -.A SS escription Advanced Power

More information

G S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3

G S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3 N-channel Enhancement-mode Power MOSFET Simple rive Requirement Low Gate Charge Surface Mount evice R S(ON) 2mΩ RoHS-compliant, halogen-free G S I.7A BV SS 3V escription Advanced Power MOSFETs from APEC

More information

N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) SOP-8 A D

N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) SOP-8 A D SM Type N-Channel Enhancement Features VS (V) = 30V SOP-8 I = 6 A (VGS = 0V) RS(ON) < 6.8mΩ (VGS = 0V) HEXFET Power S 8 A.50 0.5 S S 2 3 7 6 0.2 +0.04-0.02 G 4 5 Absolute Maximum Ratings Ta = 25 Parameter

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOFET Features Pin Description 3V/7, R D(ON) =4.5mΩ (typ.) @ V G = V R D(ON) =6mΩ (typ.) @ V G = 4.5V uper High Dense Cell Design valanche Rated Reliable and Rugged Lead Free

More information

AO4407A P-Channel Enhancement Mode Field Effect Transistor

AO4407A P-Channel Enhancement Mode Field Effect Transistor AO447A PChannel Enhancement Mode Field Effect Transistor General escription The AO447A/L uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 25V gate rating.

More information

AO V N-Channel MOSFET

AO V N-Channel MOSFET 3V NChannel MOFET General escription The AO4494 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is for PWM applications. Product ummary

More information

AO V P-Channel MOSFET

AO V P-Channel MOSFET AO347 3V PChannel MOFET eneral escription The AO347 uses advanced trench technology to provide excellent R (ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications.

More information

SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF)   Features. Absolute Maximum Ratings Ta = 25 SOT-.9 -. +.. -. +. Unit: mm Features VDS (V) = V ID =.8 A (VGS = V) RDS(ON) < 6mΩ (VGS = V) RDS(ON) < mω (VGS =.V). -. +..9 -. +..9 -. +.. -. +.... -. +. Pb Free Package May be Available. The G Suffix

More information

AO4264E 60V N-Channel AlphaSGT TM

AO4264E 60V N-Channel AlphaSGT TM 6 NChannel AlphaGT TM General escription Trench Power AlphaGT TM technology Low R (ON) Low Gate Charge E protected Product ummary 6 I (at G =) 3.5A R (ON) (at G =) < 9.8mΩ R (ON) (at G =4.5) < 3.5mΩ Typical

More information

V DS. ESD Protected 100% UIS Tested 100% R g Tested

V DS. ESD Protected 100% UIS Tested 100% R g Tested 3V NChannel MOFET General escription The AO4468 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery

More information

WNM2046 G S WNM2046. Descriptions. Features. Applications. Order information. Single N-Channel, 20V, 0.

WNM2046 G S WNM2046. Descriptions. Features. Applications. Order information.   Single N-Channel, 20V, 0. WNM2046 Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.com (V) 20 Typical Rds(on) (Ω) 20@ =4.5V 60@ =2.5V 0.315@ =1.8V G S escriptions FN1006-3L The WNM2046 is N-Channel enhancement

More information

Complementary MOSFET

Complementary MOSFET General Description ELM66EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. Maximum Absolute Ratings ELM66EA-S N-channel P-channel Vds=V Vds=-V Id=3.A(Vgs=.V) Id=-.A(Vgs=-.V)

More information

WPM1481 WPM1481. Descriptions. Features WLSI CYWW. Applications. Order information.

WPM1481 WPM1481. Descriptions. Features WLSI CYWW. Applications. Order information. Single P-Channel, -12, -5.1A, Power MOSFET Http://www.sh-willsemi.com S () Typical Rds(on) (Ω) I (A).24@ = - 4.5-5.5-12.32@ = - 2.5-4..47@ = - 1.8-2.5 FN2*2-6L escriptions The is P-Channel enhancement

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3A D. Pin 1

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested. DFN 3x3A D. Pin 1 AON746 3V NChannel MOFET General escription The AON746 uses advanced trench technology and design to provide excellent R (ON) with low gate charge. This device is suitable for use in MP and general purpose

More information

AO4402G 20V N-Channel MOSFET

AO4402G 20V N-Channel MOSFET AOG V NChannel MOFET General escription Trench Power MOFET technology Low R (ON) RoH and HalogenFree Compliant Product ummary V I (at V G =.5V) R (ON) (at V G =.5V) R (ON) (at V G =.5V) V A < 5.9mΩ < 7.mΩ

More information

G S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3

G S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3 AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs

More information

-2.7A. Pin Out - Top View

-2.7A. Pin Out - Top View 6V P-HANNEL ENHANEMENT MODE MOSFET Product Summary Features and Benefits ADVANE INFORMATION NEW PRODUT V (BR)DSS -6V Description R DS(on) I D T A = +25 5mΩ @ V GS = -V -3A 85mΩ @ V GS = -4.5V -2.7A This

More information

G S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3

G S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs

More information

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor AO485/AOI485 PChannel Enhancement Mode Field Effect Transistor eneral escription The AO485/AOI485 uses advanced trench technology to provide excellent R (ON) and low gate charge. With the excellent thermal

More information

AO4292E 100V N-Channel MOSFET

AO4292E 100V N-Channel MOSFET NChannel MOFET General escription Trench Power M MOFET technology Low R (ON) Low Gate Charge Optimized for fastswitching applications E protected RoH and HalogenFree Compliant Applications ynchronus Rectification

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested G G S

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% Rg Tested G G S AO49 NChannel AlphaMO General escription Trench Power AlphaMO (αmo M) technology Low R (ON) Low Gate Charge Optimized for fastswitching applications RoH and HalogenFree Compliant Product ummary I (at G

More information

AP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.

AP0803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. P83GMT-HF Halogen-Free Product dvanced Power N-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOFET imple rive Requirement BV 3V O-8 Compatible R (ON) 8.5mΩ Low On-resistance I 5 G RoH Compliant escription

More information

AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE

AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The is available in DFN8(3x3) Package ORDERING INFORMATION Package Type Part Number DFN8(3x3) J8R J8 SPQ: 5,000pcs/Reel J8VR V: Halogen free Package Note R: Tape & Reel AiT provides all RoHS

More information

V DS (V) = 30V I D = 10A (V GS = 10V) R DS(ON) < 19.5mΩ (V GS = 10V) R DS(ON) < 26mΩ (V GS = 4.5V) V DS V GS I D I DM I AR E AR P D T J, T STG

V DS (V) = 30V I D = 10A (V GS = 10V) R DS(ON) < 19.5mΩ (V GS = 10V) R DS(ON) < 26mΩ (V GS = 4.5V) V DS V GS I D I DM I AR E AR P D T J, T STG General escription The AO4496 uses advanced trench technology to provide excellent R (ON) with low gate charge. This device is suitable for use as a CC converter application. Product ummary V (V) = 3V

More information

AO V N-Channel MOSFET

AO V N-Channel MOSFET AO494 NChannel MOFET General escription Trench Power M MOFET technology Low R (ON) Low Gate Charge Optimized for fastswitching applications Product ummary I (at G =).5A R (ON) (at G =) < mω R (ON) (at

More information

G S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.

G S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0. P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs

More information

G S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG

G S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from

More information

AO4406 N-Channel Enhancement Mode Field Effect Transistor

AO4406 N-Channel Enhancement Mode Field Effect Transistor AO446 NChannel Enhancement Mode Field Effect Transistor General escription The AO446/L uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low

More information

N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage

N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S

More information

G S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1.

G S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1. AP236AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate rive Lower On-resistance Surface-Mount evice R S(ON) 35mΩ RoHS-compliant, Halogen-free G S I 5A BV SS 3V escription Advanced Power

More information

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested

V DS I D (at V GS =10V) R DS(ON) (at V GS =4.5V) 100% UIS Tested 100% R g Tested 3V NChannel MOFET General escription Latest Trench Power AlphaMO (αmo LV) technology Very Low R (ON) at 4.5V V G Low Gate Charge High Current Capability RoH and HalogenFree Compliant Product ummary V I

More information

Complementary Trench MOSFET AO4629 (KO4629) SOP P-channel

Complementary Trench MOSFET AO4629 (KO4629) SOP P-channel Features N-Channel VDS (V) = 3V ID = A (VGS = V) RDS(ON) < 3mΩ (VGS = V) RDS(ON) < 4mΩ (VGS = 4.V) P-Channel VDS (V) = -3V ID = -. A (VGS = -V) RDS(ON) < 4mΩ (VGS = -V) RDS(ON) < 74mΩ (VGS = -4.V) SOP-8.

More information

V DS -20V I D (at V GS =-4.5V) -5A R DS(ON) (at V GS = -1.8V) ESD protected SOT23 D G G

V DS -20V I D (at V GS =-4.5V) -5A R DS(ON) (at V GS = -1.8V) ESD protected SOT23 D G G 2V PChannel MOFET eneral escription The AO345A uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for use

More information

SMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC66SN Single N-Channel MOSFET DESCRIPTION SMC66 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

AO V P-Channel MOSFET V DS. -60V I D (at V GS =-10V) -4A R DS(ON) (at V GS = -4.5V)

AO V P-Channel MOSFET V DS. -60V I D (at V GS =-10V) -4A R DS(ON) (at V GS = -4.5V) 6V PChannel MOFET General escription The AO4441 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge. This device is suitable for use as a load switch or in PWM applications.

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON) SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

PKP3105. P-Ch 30V Fast Switching MOSFETs

PKP3105. P-Ch 30V Fast Switching MOSFETs Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin

More information

LESHAN RADIO COMPANY, LTD.

LESHAN RADIO COMPANY, LTD. LEHAN RAIO COMPANY, LT. LO4459PT1G P-Channel Enhancement Mode Field Effect Transistor General escription The LO4459PT1G uses advanced trench technology to provide excellent R (ON) with low gate charge.

More information

AO4468 N-Channel Enhancement Mode Field Effect Transistor

AO4468 N-Channel Enhancement Mode Field Effect Transistor NChannel Enhancement Mode Field Effect Transistor General escription The AO4468 uses advanced trench technology to provide excellent R (ON) and low gate charge. This device is suitable for use as a load

More information

SMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF)   Features. Absolute Maximum Ratings Ta = 25 N-Channel SI8CDS-HF (KI8CDS-HF) Features VDS (V) = V ID =.6 A (VGS = V) RDS(ON) < mω (VGS = V) RDS(ON) < mω (VGS =.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D.8 -.

More information

STN4420. N-Channel Enhancement Mode MOSFET. 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE APPLICATIONS PIN CONFIGURATION

STN4420. N-Channel Enhancement Mode MOSFET. 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE APPLICATIONS PIN CONFIGURATION DESCRIPTION The STN is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable

More information

V DS. 100% UIS Tested 100% R g Tested SOIC-8 D

V DS. 100% UIS Tested 100% R g Tested SOIC-8 D 3V PChannel MOFET General escription The AO447 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery

More information

AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE

AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching

More information

V DS R DS(ON) (at V GS =-2.5V)

V DS R DS(ON) (at V GS =-2.5V) 3V PChannel MOFET eneral escription The AO741 uses advanced trench technology to provide excellent R (ON), low gate charge, and operation with gate voltages as low as.5v, in the small OT33 footprint. It

More information

STP4435. P-Channel Enhancement Mode MOSFET. -30V P-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION

STP4435. P-Channel Enhancement Mode MOSFET. -30V P-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION DESCRIPTION The STP35 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is

More information

DACO SEMICONDUCTOR CO., LTD.

DACO SEMICONDUCTOR CO., LTD. Nhannel Enhancement Mode MOSFET Features V SS = V Preliminary SOT227 S R S(ON) < 1.5 S Fully valanche Rated Pb Free & RoHS ompliant S solation Type Package Electrically solation base plate pplications

More information

AOD423/AOI423/AOY423 30V P-Channel MOSFET

AOD423/AOI423/AOY423 30V P-Channel MOSFET AO43/AOI43/AOY43 3V PChannel MOFET eneral escription The AO43/AOI43/AOY43 uses advanced trench technology to provide excellent R (ON), low gate charge and low gate resistance. With the excellent thermal

More information

PTU2N8 0/PTD2N8 0. Absolute Maximum Ratings Tc=25 unless other wise noted. Thermal Characteristics. Features. 600V N-Channel MOSFET

PTU2N8 0/PTD2N8 0. Absolute Maximum Ratings Tc=25 unless other wise noted. Thermal Characteristics. Features. 600V N-Channel MOSFET PTU2N8 0/PTD2N8 0 HIGH VOLTAGE N-Channel MOSFET 600V N-Channel MOSFET Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :12 nc

More information

AOD407 P-Channel Enhancement Mode Field Effect Transistor

AOD407 P-Channel Enhancement Mode Field Effect Transistor AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent

More information

HCS70R1K6 700V N-Channel Super Junction MOSFET

HCS70R1K6 700V N-Channel Super Junction MOSFET HCS70RK6 700 NChannel Super Junction MOSFET Features ery Low FOM (R DS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 00% valanche Tested Builtin ESD Diode pplication Switch

More information

V DS. 100% UIS Tested 100% R g Tested

V DS. 100% UIS Tested 100% R g Tested 3V NChannel MOFET General escription The uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.5v. This device makes an excellent high

More information

AON V N-Channel AlphaMOS

AON V N-Channel AlphaMOS AON344 V NChannel AlphaMO General escription Trench Power AlphaMO (αmo LV) technology Low R (ON) High Current Capability RoH and HalogenFree Compliant Product ummary V V I (at V G =V).5A R (ON) (at V G

More information

AO V P-Channel MOSFET. V DS R DS(ON) (at V GS =-4.5V) -30V

AO V P-Channel MOSFET. V DS R DS(ON) (at V GS =-4.5V) -30V 3V PChannel MOFET eneral escription The AO349 uses advanced trench technology to provide excellent R (ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product

More information

AO4407 P-Channel Enhancement Mode Field Effect Transistor

AO4407 P-Channel Enhancement Mode Field Effect Transistor June 22 AO447 P-Channel Enhancement Mode Field Effect Transistor General escription The AO447 uses advanced trench technology to provide excellent R (ON), and ultra-low low gate charge with a 25V gate

More information

AM3416 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET

AM3416 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES is available in a SOT-23 package. 20V/6A, RDS(ON)=26mΩ(Max.) @VGS=4.5V RDS(ON)=37mΩ(Max.) @VGS=2.5V ESD Protected Super High Dense Cell Design Reliable and

More information

MOSFET SI4558DY (KI4558DY)

MOSFET SI4558DY (KI4558DY) Features SOP- N-Channel:VDS=3V ID=A RDS(ON) < 4mΩ (VGS = V) RDS(ON) < mω (VGS = 4.5V) P-Channel:VDS=-3V ID=-A.5.5 RDS(ON) < 4mΩ (VGS =-V) RDS(ON) < 7mΩ (VGS =-4.5V). +.4 -. Source Gate 3 Source 4 Gate

More information

SMC3056AK. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 6.6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3056AK. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 6.6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC6AK Single N-Channel MOSFET ESCRIPTION SMC6A is the N-Channel enhancement mode power field effect transistors are using trench MOS technology. This advanced trench technology devices are well suited

More information

AOD21357/AOI V P-Channel MOSFET

AOD21357/AOI V P-Channel MOSFET AO2357/AOI2357 3V PChannel MOFET eneral escription Latest advanced trench technology Low R (ON) High Current Capability RoH and HalogenFree Compliant Product ummary V 3V I (at V =V) 7A R (ON) (at V =V)

More information

LNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.

LNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free. Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected

More information

Green Product. S amhop Microelectronics Corp. July Ver 1.2 D1/D 2 S 2 G 2 ID 10 IDM P D. W Operating Junction and Storage Temperature R ange

Green Product. S amhop Microelectronics Corp. July Ver 1.2 D1/D 2 S 2 G 2 ID 10 IDM P D. W Operating Junction and Storage Temperature R ange Green Product S amhop Microelectronics Corp. July.. 6 Ver. Dual N-C hannel E nhancement Mode F ield E ffect T ransistor P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( mω ) Max. @ VGS = 4.V V A 8 @ VGS =.V

More information

AON V P-Channel MOSFET

AON V P-Channel MOSFET AON74 3V PChannel MOFET General escription The AON74 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as

More information

Symbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C

Symbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C SMC93M Dual P-Channel MOSFET DESCRIPTION SMC93 is the Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.this advanced technology has been especially tailored

More information