0.156(3.95) 0.151(3.85) Symbol BVDSS VGS ID -9.5 A IDM -160 A. EAS mj TSTG
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1 M5P3Q8-HF P-hannel RoH evice Halogen Free Features - imple drive requirement - Low on-resistance - Fast switching speed Mechanical data.2(5.).89(4.8).(.25).8(.9).65(.65).57(.45) - Epoxy : UL 94- rated flame retardant. - ase :, molded plastic. - Lead : Pure tin plated..56(3.95).5(3.85).244(6.2).228(5.8).2(5.).88(4.8).8(.2).(.5) ircuit diagram (.32).48(.22).9(.47).4(.37).28(.7).(.3) G G : Gate : ource : rain.53(3.88).47(3.74) imensions in inches and (millimeter) bsolute Maximum Ratings (at Ta=25 unless otherwise noted) Parameter ymbol alue Unit rain-source breakdown voltage B -3 Gate-source voltage G ±25 ontinuous drain T=25 I -5 ontinuous drain T= I -9.5 Pulsed drain current (Note ) IM -6 valanche current I -5 valanche L=.mH, I=-5, RG=25Ω E.25 mj Power dissipation (Note 2) T=25 3. P T=.2 W Operating junction temperature range TJ -55 to +5 torage temperature range TTG -55 to +5 Note:. Pulse width limited by maximum junction temperature. 2. urface mounted on in² copper pad of FR-4 board, t s. RE: Page
2 Electrical haracteristics ( T=25 unless otherwise noted) Parameter ymbol onditions Min Typ Max Unit tatic rain-source breakdown voltage Gate-source threshold voltage B G(th) G =, I = -25µ = G, I = -25µ Gate-source leakage IG G = ±25, = ± n Zero gate voltage drain current I I = -24, G = = -2, G =, TJ = µ I = -5, G = rain-source on-state resistance (Note ) R(on) I = -, G = mω I = -, G = Forward transconductance (Note ) GF = -5, I = ynamic Input capacitance ciss 422 Output capacitance oss = -5, G =, f = MHZ 498 pf Reverse transfer capacitance rss 442 Turn-on delay time (Note &2) td(on) 2 Turn-on r ise time (Note &2) Turn-off delay time (Note &2) tr td(off) = -5, G = - I = -5, RG = 3Ω 9 57 n Turn-off fall time (Note &2) tf 22 Total gate charge (Note &2) Qg = -5, I = -5, G = 56 Total gate charge (Note &2) Gate-soutce charge (Note &2) Gate-drain charge (Note &2) Qg Qgs Qgd = -5, I = -5, G = 4.5 = -5, I = -5, G = n Gate resistance Rg G = 5m, =, f = MHZ 3 Ω ource-rain iode ontinuous souce-drain diode current Pulse diode forward current (Note 3) I - IM -4 Body diode voltage (Note ) IF = I, G = Reverse recovery time trr 32 n IF = -, dlf/dt = /µs Recovered charge Qrr 26 n ource-rain iode Thermal resistance RΘJ RΘJ Junction to case Junction to ambient (Note 4) /W Notes:. Pulse test: Pulse width 3µs, uty cycle 2% 2. Independent of operating temperature 3. Pulse width limited by maximum junction temperature. 4. W width mounted on a in² pad of 2 oz copper, t s; 25 /W when mounted on minimum copper pad. RE: Page 2
3 RTING N HRTERITI URE (M5P3Q8-HF) rain urrent, -I () Fig. - Typical Output haracteristics G=-4 G=-,-9,-8,-7, -6,-5 G=-3 2 G= rain-ource oltage, - () tatic rain-ource On-tate Resistance, R(ON) ( mω ) Fig.2 - tatic rain-ource On-tate Resistance rain urrent G=-3. rain urrent, -I () G=-4.5 G=- 5 Fig.3 - tatic rain-ource On-tate Resistance Gate-ource oltage Fig.4 - apacitance rain-ource oltage tatic rain-ource On-tate Resistance, R(ON), (mω) I=-5 I=- apacitance, J (pf) iss rss oss Gate-ource oltage, -G (). rain-ource oltage, - () Fig.5 - Forward Transfer dmittance vs rain urrent Fig.6 - Gate harge haracteristics Forward Transfer dmittance, GF (). =-5 Pulsed Ta=25.. Gate-ource oltage, -G () =-5 8 =-5 6 =- 4 2 I= rain urrent, -I () Total Gate harage, Qg (n) RE: Page 3
4 Reel Taping pecification P P d T F E W P 2 W YMBOL B d ±. 5.2 ±. 2. ± ±.. ±.5 3. ± ±.4.25 ±.4.83 ± ± ±.2.52 ±.8 YMBOL E F P P P W W.75 ±. 5.5 ±.5 8. ±. 4. ±. 2. ±.5.69 ±.4.27 ±.2.35 ±.4.57 ±.4.79 ± RE: Page 4
5 Marking ode Part Number Marking ode M5P3Q8-HF Product type marking code Pin uggested P Layout IZE B.6.24 B.52.6 E.27.5 E tandard Packaging ase Type REEL ( pcs ) REEL PK Reel ize 2,5 3 RE: Page 5
G : GATE S : SOURCE D : DRAIN. Symbol VDS VGS. Avalanche Current EAS EAR TSTG
M25N3Q-HF N-hannel RoH evice Halogen Free Features - ingle rive Requirement..2(5.).5(4.7).(.25).7(.7) - Low On-resistance. - Fast witching haracteristic. - ynamic dv/dt rating..57(4.).5(3.).244(6.2).22(5.)
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2V PChannel MOFET eneral escription The AO345A uses advanced trench technology to provide excellent R (ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for use
More informationSMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION
SMC66SN Single N-Channel MOSFET DESCRIPTION SMC66 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited
More informationAO V P-Channel MOSFET V DS. -60V I D (at V GS =-10V) -4A R DS(ON) (at V GS = -4.5V)
6V PChannel MOFET General escription The AO4441 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge. This device is suitable for use as a load switch or in PWM applications.
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)
SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS
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More informationPKP3105. P-Ch 30V Fast Switching MOSFETs
Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin
More informationLESHAN RADIO COMPANY, LTD.
LEHAN RAIO COMPANY, LT. LO4459PT1G P-Channel Enhancement Mode Field Effect Transistor General escription The LO4459PT1G uses advanced trench technology to provide excellent R (ON) with low gate charge.
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NChannel Enhancement Mode Field Effect Transistor General escription The AO4468 uses advanced trench technology to provide excellent R (ON) and low gate charge. This device is suitable for use as a load
More informationSMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF) Features. Absolute Maximum Ratings Ta = 25
N-Channel SI8CDS-HF (KI8CDS-HF) Features VDS (V) = V ID =.6 A (VGS = V) RDS(ON) < mω (VGS = V) RDS(ON) < mω (VGS =.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D.8 -.
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DESCRIPTION The STN is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable
More informationV DS. 100% UIS Tested 100% R g Tested SOIC-8 D
3V PChannel MOFET General escription The AO447 combines advanced trench MOFET technology with a low resistance package to provide extremely low R (ON). This device is ideal for load switch and battery
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DESCRIPTION is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching
More informationV DS R DS(ON) (at V GS =-2.5V)
3V PChannel MOFET eneral escription The AO741 uses advanced trench technology to provide excellent R (ON), low gate charge, and operation with gate voltages as low as.5v, in the small OT33 footprint. It
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DESCRIPTION The STP35 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is
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Nhannel Enhancement Mode MOSFET Features V SS = V Preliminary SOT227 S R S(ON) < 1.5 S Fully valanche Rated Pb Free & RoHS ompliant S solation Type Package Electrically solation base plate pplications
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AON344 V NChannel AlphaMO General escription Trench Power AlphaMO (αmo LV) technology Low R (ON) High Current Capability RoH and HalogenFree Compliant Product ummary V V I (at V G =V).5A R (ON) (at V G
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3V PChannel MOFET eneral escription The AO349 uses advanced trench technology to provide excellent R (ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product
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June 22 AO447 P-Channel Enhancement Mode Field Effect Transistor General escription The AO447 uses advanced trench technology to provide excellent R (ON), and ultra-low low gate charge with a 25V gate
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SMC6AK Single N-Channel MOSFET ESCRIPTION SMC6A is the N-Channel enhancement mode power field effect transistors are using trench MOS technology. This advanced trench technology devices are well suited
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AO2357/AOI2357 3V PChannel MOFET eneral escription Latest advanced trench technology Low R (ON) High Current Capability RoH and HalogenFree Compliant Product ummary V 3V I (at V =V) 7A R (ON) (at V =V)
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AON74 3V PChannel MOFET General escription The AON74 uses advanced trench technology to provide excellent R (ON), and ultralow low gate charge with a 5V gate rating. This device is suitable for use as
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SMC93M Dual P-Channel MOSFET DESCRIPTION SMC93 is the Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.this advanced technology has been especially tailored
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