IXZ631DF12N100 RF Power MOSFET & Driver 1000 V 12 A

Transcription

1 DE75-N MOSFET and IXRFD6 Gate Driver Module Features Isolated substrate High isolation voltage (>5 V) Excellent thermal transfer Increased temperature and power cycling capability Low R DS(ON) Very low insertion inductance No Beryllium Oxide (BeO) or other hazardous materials Latch-up protected Low quiescent supply current RoHS compliant Advantages Optimized for RF and high speed Easy to mount, no insulators needed High power density Single package reduces size and heat sink area IXZ6DFN V A Ω Applications Class D or E switching generators Switch mode power supplies (SMPS) Pulse generators Transducer driver Description The IXZ6DFN is a CMOS high-speed, high-current gate driver and MOSFET combination module specifically designed for Class D, E, HF, and RF applications at up to 7 MHz, as well as other applications. The IXZ6DFN in pulse mode can provide 7 A of peak current while producing voltage rise and fall times of less than 5 ns, and minimum pulse widths of 8 ns. The input of the driver is fully immune to latch-up over the entire operating range. Designed with small internal delays, the IXZ6DFN is suitable for higher power operation where combiners are used. Its features and wide safety margin in operating voltage and power make the IXZ6DFN unmatched in performance and value. The IXZ6DFN is packaged in IXYSRF s low-inductance RF package incorporating layout techniques to minimize stray lead inductances for optimum switching performance. The IXZ6DFN is a surface-mountable device. Figure Functional diagram

2 Device Specifications Device Performance IXZ6DFN Parameter Value Maximum junction temperature 5 C Operating temperature range - 4 C to 85 C Weight 5.5 g Symbol Test Conditions Maximum Ratings fmax ID =.5 IDM5 A 7 MHz VDSS V VCC V IDSS VDS =.8 VDSS TJ = 5 C 5 ua VGS = V TJ = 5 C ma IDM5 TC = 5 C A IDM TC = 5 C, pulse limited by TJM 7 A IAR TC = 5 C A PT (MOSFET and Driver) TC = 5 C 65 W RthJC RthJHS Symbol Test Condition Minimum Typical Maximum RDS(ON) V CC = 5 V, I D =.5I DM5 A Pulse t µs, Duty Cycle % VCC 8 V 5 V V IN (Signal Input) - 5 V VCC +. V VIH (High Input Voltage) V CC = 5 V Ω.5 V V. C/W.4 C/W VIL (Low Input Voltage).8 V.8 V VHYS Input hysteresis. V ZIN f = MHz 9-j796 Ω Cstray COSS tondly toffdly tr tf f = MHz any one pin to the back plane metal V IN (V GS ) = V, V DS =.8 V DSS(max) f = MHz T C = 5 C V CC = 5 V µs pulse, I D = 6 A 46 pf pf 5 ns 8 ns.4 ns.55 ns

3 Propagation Delay (ns) Rise Time (ns) Fig. Input Threshold (V) Input Threshold vs. Vcc Voltage V IH V IL 5 5 Vcc Supply Voltage (V) Vcc Current (A) Fig IXZ6DFN Vcc Current vs. Frequency Vcc = V Frequency (MHz) Vcc = 5V Vcc = 8V Vcc = 8V Vcc = V Fig. 4 Fig. 5 Vcc Current (A) Vcc Current vs. Vcc Voltage 7 MHz MHz 5 MHz MHz Propagation Delay (ns) t ONDLY Propagation Delay vs. V CC Voltage 85 C 5 C - 4 C Vcc Supply Voltage (V) 5 5 Fig. 6 Fig. 7 t OFFDLY Propagation Delay vs. V CC Voltage C 4 5 C 5-4 C t R Rise Time vs. Vcc Voltage C.4 5 C. -4 C

4 Coss (pf) Fig. 8 Fig. 9 Fall Time (ns) Drain Current (A) Fig. Fig t F Fall Time vs. Vcc Voltage C OSS Ouput Capacitance vs. V DS RDSON (Ω) Drain Current (A) C IXZ6DFN 85 C 5 C R DSON vs. Vcc Voltage 5 5 Typical Ouput Characteristics Vcc = Vcc V to = 8-8V V Vcc = 8V V DS Drain to Source Voltage (V) V DS Drain to Source Voltage (V) Fig. Fig. Extended Ouput Characteristics 45 Vcc = V to 8 V Vcc =-8V Vcc = 8V V DS Drain to Source Voltage (V) Normalized RDS(ON) Normalized R DS(ON) vs. Temperature Temperature ( C)

5 IXZ6DFN Lead description SYMBOL FUNCTION DESCRIPTION Drain MOSFET drain Drain of power MOSFET. S/DGND MOSFET source Source of power MOSFET. This connection is common to DGND. Vcc Driver section supply voltage Power supply input for the logic input and driver output sections. IN Input Input signal. DGND Driver power ground The driver ground leads. Internally connected to all circuitry, these leads provide ground reference for the driver. These leads should be connected to a low-noise analog ground plane for optimum performance. None No connection to this lead. Figure 4 Package drawing

6 IXZ6DFN Figure 5 Test circuit S/DGND MOSFET & Driver Module S/DGND *Choke A common-mode choke is optional and can be used to help stabilize the threshold level due to ground bounce and to minimize false triggering. C BULK - Bulk capacitance helps to stabilize both the high voltage V DS for the drain circuit and low voltage Vcc for the driver circuit. Actual values vary according to load and operating conditions. For the driver section, tantalum capacitors are recommended for their fast energy delivery. C BYPASS - Ideally, the benefits realized through bypass capacitance increase as more is used by way of overlapping impedance curves, lowering the overall broadband impedance to ground. Typically a range of. µf,. µf,. µf capacitors in sufficient quantities give good results. Circuit board layout should be carefully considered to optimize operation. Each of the Vcc leads on the driver section should be treated as its own power supply lead. Bulk and bypass capacitors attached between drain and source leads should be placed symmetrically between the leads. Excessive parasitic inductance can result in V = L di/dt inductive voltage drops, causing unpredictable operation.

7 IXZ6DFN Figure 6 IXZ6DFN package outline REV October 4 IXYS RF An IXYS Company 69 Oakridge Dr., Suite Fort Collins, CO USA Fax: sales@ixyscolorado.com Web: IXYSRF reserves the right to change limits, test conditions, and dimensions without notice.