0.28 Ω CMOS 1.65 V to 3.6 V Single SPST Switches in SC70 ADG841/ADG842
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1 .28 Ω CMO 1.65 V to 3.6 V ingle PT witches in C7 FEATURE Ultralow on resistance.28 Ω typical.48 Ω max at 125 C Excellent audio performance, ultralow distortion.25 Ω typical.52 Ω max RON flatness 1.65 V to 3.6 V single supply High current carrying capability 3 ma continuous current 5 ma peak current Automotive temperature range: 4 C to +125 C Rail-to-rail operation Typical power consumption (<.1 µw) FUNCTIONAL BLOCK IAGRAM IN AG841 IN WITCHE HOWN FOR A LOGIC 1 INPUT Figure 1. AG APPLICATION Handsets PAs MP3 players Power routing Battery-powered systems Communication systems Modems PCMCIA cards GENERAL ECRIPTION The AG841 and AG842 are low voltage CMO devices containing a single-pole, single-throw (PT) switch. The AG841 is closed for a Logic 1 input and the AG842 is open for a Logic 1 input. The devices offer ultralow on resistance of less than.48 Ω over the full temperature range. The AG841/ AG842 are fully specified for 3.3 V, 2.5 V, and 1.8 V supply operation. PROUCT HIGHLIGHT 1. <.48 Ω over full temperature range of 4 C to +125 C. 2. Compatible with 1.8 V CMO logic. 3. High current handling capability (3 ma continuous current at 3.3 V). 4. Low TH + N (.2% typ). 5. Tiny C7 package. Table 1. Truth Table Logic (IN) AG841 AG842 Off On 1 On Off Each switch conducts equally well in both directions when on, and has an input signal range that extends to the supplies. The exhibit break-before-make switching action. The are available in a 6-lead C7 package. Rev. Information furnished by Analog evices is believed to be accurate and reliable. However, no responsibility is assumed by Analog evices for its use, nor any infringements of patents or other rights of third parties that may result from its use. pecifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog evices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA , U..A. Tel: Fax: Analog evices, Inc. All rights reserved.
2 TABLE OF CONTENT pecifications 2.7 V to 3.6 V... 3 pecifications 2.5 V ±.2 V... 4 pecifications 1.65 V to Absolute Maximum Ratings... 6 E Caution... 6 Typical Performance Characteristics...8 Terminology...11 Test Circuits...12 Outline imensions...13 Ordering Guide...13 Pin Configuration and Function escriptions... 7 REVIION HITORY 4/5 Revision : Initial Version Rev. Page 2 of 16
3 PECIFICATION 2.7 V TO 3.6 V 1 V = 2.7 V to 3.6 V, GN = V, unless otherwise noted. Table 2. 4 C 4 C Parameter +25 C to +85 C to +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V V V = 2.7 V On Resistance (RON).28 Ω typ V = 2.7 V, V = V to V, I = 1 ma Ω max Figure 18 On Resistance Flatness (RFLAT (ON)).25 Ω typ V = 2.7 V, V = V to V, I = 1 ma Ω max LEAKAGE CURRENT V = 3.6 V ource Off Leakage I (OFF) ±.2 na typ V =.6 V/3.3 V, V = 3.3 V/.6 V; Figure 19 Channel On Leakage I, I (ON) ±.2 na typ V = V =.6 V or 3.3 V; Figure 2 IGITAL INPUT Input High Voltage, VINH 2 V min Input Low Voltage, VINL.8 V max Input Current, IINL or IINH.5 µa typ VIN = VINL or VINH ±.1 µa max igital Input Capacitance, CIN 3.2 pf typ YNAMIC CHARACTERITIC 2 ton 1.5 ns typ RL = 5 Ω, CL = 35 pf ns max V = 1.5 V; Figure 21 toff 6.5 ns typ RL = 5 Ω, CL = 35 pf ns max V = 1.5 V; Figure 21 Charge Injection 2 pc typ V = 1.5 V, R = Ω, CL = 1 nf; Figure 22 Off Isolation 54 db typ RL = 5 Ω, CL = 5 pf, f = 1 khz; Figure 23 Total Harmonic istortion (TH + N).12 % RL = 32 Ω, f = 2 Hz to 2 khz, V = 3 V p-p Insertion Loss.2 db typ RL = 5 Ω, CL = 5 pf; Figure 24 3 db Bandwidth 21 MHz typ RL = 5 Ω, CL = 5 pf; Figure 24 C (OFF) 16 pf typ C (OFF) 16 pf typ C, C (ON) 238 pf typ POWER REQUIREMENT V = 3.6 V I.3 µa typ igital inputs = V or 3.6 V 1 4 µa max 1 Temperature range is 4 C to +125 C 2 Guaranteed by design; not subject to production test. Rev. Page 3 of 16
4 PECIFICATION 2.5 V ±.2 V 1 V = 2.5 V ±.2 V, GN = V, unless otherwise noted. Table 3. 4 C 4 C Parameter +25 C to +85 C to +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V V On Resistance (RON).3 Ω typ V = 2.3 V, V = V to V, I = 1 ma Ω max Figure 18 On Resistance Flatness (RFLAT (ON)).25 Ω typ V = 2.3 V, V = V to V, I = 1 ma Ω max LEAKAGE CURRENT V = 2.7 V ource Off Leakage I (OFF) ±.2 na typ V =.6 V/2.4 V, V = 2.4 V/.6 V; Figure 19 Channel On Leakage I, I (ON) ±.2 na typ V = V =.6 V or 2.4 V; Figure 2 IGITAL INPUT Input High Voltage, VINH 1.7 V min Input Low Voltage, VINL.7 V max Input Current, IINL or IINH.5 µa typ VIN = VINL or VINH ±.1 µa max igital Input Capacitance, CIN 3.2 pf typ YNAMIC CHARACTERITIC 2 ton 13 ns typ RL = 5 Ω, CL = 35 pf ns max V = 1.5 V; Figure 21 toff 7 ns typ RL = 5 Ω, CL = 35 pf ns max V = 1.5 V; Figure 21 Charge Injection 15 pc typ V = 1.25 V, R = Ω, CL = 1 nf; Figure 22 Off Isolation 54 db typ RL = 5 Ω, CL = 5 pf, f = 1 khz; Figure 23 Total Harmonic istortion (TH + N).22 % RL = 32 Ω, f = 2 Hz to 2 khz, V = 1.5 V p-p Insertion Loss.2 db typ RL = 5 Ω, CL = 5 pf; Figure 24 3 db Bandwidth 21 MHz typ RL = 5 Ω, CL = 5 pf; Figure 24 C (OFF) 17 pf typ C (OFF) 17 pf typ C, C (ON) 238 pf typ POWER REQUIREMENT V = 2.7 V I.3 µa typ igital inputs = V or 2.7 V 1 4 µa max 1 Temperature range is 4 C to +125 C. 2 Guaranteed by design; not subject to production test. Rev. Page 4 of 16
5 PECIFICATION 1.65 V TO V = 1.65 V to1.95 V, GN = V, unless otherwise noted. Table 4. 4 C 4 C Parameter +25 C to +85 C to +125 C Unit Test Conditions/Comments ANALOG WITCH Analog ignal Range V to V V On Resistance (RON).37 Ω typ V = 1.8 V, V = V to V, I = 1 ma Ω max Figure Ω max V = 1.65 V, V = V to V, I = 1 ma On Resistance Flatness (RFLAT (ON)).17 Ω typ V = 1.65 V, V = V to V, I = 1 ma LEAKAGE CURRENT V = 1.95 V ource Off Leakage I (OFF) ±.2 na typ V =.6 V/1.65 V, V = 1.65 V/.6 V; Figure 19 Channel On Leakage I, I (ON) ±.2 na typ V = V =.6 V or 1.65 V; Figure 2 IGITAL INPUT Input High Voltage, VINH.65 V V min Input Low Voltage, VINL.35 V V max Input Current, IINL or IINH.5 µa typ VIN = VINL or VINH ±.1 µa max igital Input Capacitance, CIN 4 pf typ YNAMIC CHARACTERITIC 2 ton 19 ns typ RL = 5 Ω, CL = 35 pf ns max V = 1.5 V; Figure 21 toff 8 ns typ RL = 5 Ω, CL = 35 pf ns max V = 1.5 V; Figure 21 Charge Injection 1 pc typ V = 1 V, R = V, CL = 1 nf; Figure 22 Off Isolation 54 db typ RL = 5 Ω, CL = 5 pf, f = 1 khz; Figure 23 Total Harmonic istortion (TH + N).14 % RL = 32 Ω, f = 2 Hz to 2 khz, V = 1.2 V p-p Insertion Loss.2 db typ RL = 5 Ω, CL = 5 pf; Figure 24 3 db Bandwidth 21 MHz typ RL = 5 Ω, CL = 5 pf; Figure 24 C (OFF) 178 pf typ C (OFF) 178 pf typ C, C (ON) 238 pf typ POWER REQUIREMENT V = 1.95 V I.3 µa typ igital inputs = V or 1.95 V 1 4 µa max 1 Temperature range 4 C to +125 C. 2 Guaranteed by design; not subject to production test. Rev. Page 5 of 16
6 ABOLUTE MAXIMUM RATING TA = 25 C, unless otherwise noted. Table 5. Parameter Rating V to GN.3 V to +4.6 V Analog Inputs 1.3 V to V +.3 V igital Inputs 1.3 V to 4.6 V or 1 ma, whichever occurs first Peak Current, or 3.3 V Operation 5 ma 2.5 V Operation 46 ma 1.8 V Operation 42 ma (pulsed at 1 ms, 1% duty cycle max) Continuous Current, or 3.3 V Operation 3 ma 2.5 V Operation 275 ma 1.8 V Operation 25 ma Operating Temperature Range Automotive (Y Version) 4 C to +125 C torage Temperature Range 65 C to +15 C Junction Temperature 15 C C7 Package θja Thermal Impedance C/W Reflow oldering (Pb-free) Peak Temperature 26(+/ 5) C Time at Peak Temperature 1 sec to 4 sec tresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 1 Overvoltages at or are clamped by internal diodes. Current should be limited to the maximum ratings given. E CAUTION E (electrostatic discharge) sensitive device. Electrostatic charges as high as 4 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary E protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper E precautions are recommended to avoid performance degradation or loss of functionality. Rev. Page 6 of 16
7 PIN CONFIGURATION AN FUNCTION ECRIPTION 1 2 GN 3 AG841/ AG842 TOP VIEW (Not to cale) NC = NO CONNECT V NC IN Figure 2. 6-Lead C7 Table 6. Pin Function escriptions Pin No. Mnemonic escription 1 rain Terminal. Can be an input or output. 2 ource Terminal. Can be an input or output. 3 GN Ground ( V) Reference. 4 IN Logic Control Input. 5 NC No Connect. 6 V Most Positive Power upply Potential. Rev. Page 7 of 16
8 TYPICAL PERFORMANCE CHARACTERITIC.35 T A = 25 C I = 1mA.5.45 V = 3.3V I = 1mA ON REITANCE (Ω) V = 3.3V V = 3V V = 3.6V ON REITANCE (Ω) C +85 C +25 C 4 C OURCE VOLTAGE (V) OURCE VOLTAGE (V) Figure 3. On Resistance vs. V (V) V = 3.3 V ±.3 V Figure 6. On Resistance vs. V (V) for ifferent Temperatures,V = 3.3 V.35 T A = 25 C I = 1mA.5.45 V = 2.5V I = 1mA.325 V = 2.3V C ON REITANCE (Ω) V = 2.5V V = 2.7V ON REITANCE (Ω) C +25 C 4 C OURCE VOLTAGE (V) OURCE VOLTAGE (V) Figure 4. On Resistance vs. V (V) V = 2.5 V ±.2 V Figure 7. On Resistance vs. V (V) for ifferent Temperatures, V = 2.5 V T A = 25 C I = 1mA V = 1.65V.6.5 V = 1.8V I = 1mA +125 C +85 C ON REITANCE (Ω) V = 1.8V V = 1.95V ON REITANCE (Ω) C +25 C OURCE VOLTAGE (V) Figure 5. On Resistance vs. V (V) V = 1.8 V ±.15 V OURCE VOLTAGE (V) Figure 8. On Resistance vs. V (V) for ifferent Temperatures, V = 1.8 V Rev. Page 8 of 16
9 2 V = 3.3V 45 4 T A = 25 C LEAKAGE (na) I, I (ON) I (OFF) CHARGE INJECTION (pc) V = 3.3V V = 1.8V V = 2.5V 5 I (OFF) TEMPERATURE ( C) V (V) Figure 9. Leakage Current vs. Temperature, V = 3.3 V Figure 12. Charge Injection vs. ource Voltage V = 2.5V I, I (ON) 2 T ON V = 1.8V LEAKAGE (na) I (OFF) I (OFF) TIME (ns) T OFF V = 2.5V V = 3.3V V = 1.8V V = 2.5V V = 3.3V TEMPERATURE ( C) TEMPERATURE ( C) Figure 1. Leakage Current vs. Temperature, V = 2.5 V Figure 13. ton/toff Times vs. Temperature 6 5 V = 1.8V 1 2 T A = 25 C V = 3.3V/2.5V/1.8V 4 I, I (ON) 3 LEAKAGE (na) I (OFF) ON REPONE (db) I (OFF) TEMPERATURE k 1k 1k 1M 1M FREQUENCY (Hz) 1M Figure 11. Leakage Current vs. Temperature, V = 1.8 V Figure 14. Bandwidth Rev. Page 9 of 16
10 T A = 25 C V = 3.3V/2.5V/1.8V T A = 25 C V = 3.3V / 2.5V 2 2 V = 1.8V ON REPONE (db) ON REPONE (db) k 1k 1k 1M 1M FREQUENCY (Hz) 1M k 1k 1k 1M 1M FREQUENCY (Hz) 1M Figure 15. Off Isolation vs. Frequency Figure 17. AC PRR TH + N (%).15.1 V = 1.8V; V p-p = 1V V = 2.5V; V p-p = 2V.5 V = 3.3V; V p-p = 2V FREQUENCY (khz) Figure 16. Total Harmonic istortion + Noise Rev. Page 1 of 16
11 TERMINOLOGY I Positive supply current. V (V) Analog voltage on Terminals and. RON Ohmic resistance between and. RFLAT (ON) Flatness is the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. I (OFF) ource leakage current with the switch off. I (OFF) rain leakage current with the switch off. I, I (ON) Channel leakage current with the switch on. VINL Maximum input voltage for Logic. VINH Minimum input voltage for Logic 1. IINL (IINH) Input current of the digital input. C (OFF) Off switch source capacitance. Measured with reference to ground. C (OFF) Off switch drain capacitance. Measured with reference to ground. C, C (ON) On switch capacitance. Measured with reference to ground. CIN igital input capacitance. ton elay time between the 5% and the 9% points of the digital input and switch on condition. toff elay time between the 5% and the 9% points of the digital input and switch off condition. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on-off switching. Off Isolation A measure of unwanted signal coupling through an off switch. 3 db Bandwidth The frequency at which the output is attenuated by 3 db. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch. TH + N The ratio of the harmonics amplitude plus noise of a signal to the fundamental. PRR Power upply Rejection Ratio. This is a measure of the coupling of unwanted ac signals on the power supply to the switch output when the supply is not decoupled. Rev. Page 11 of 16
12 TET CIRCUIT V I (OFF) A I (OFF) A NC I (ON) A I V V V V Figure 18. On Resistance Figure 19. Off Leakage Figure 2. On Leakage.1µF V V.1µF V IN AG841 5% 5% V V V IN GN R L 3Ω C L 35pF V OUT V IN V OUT AG842 5% 5% 9% 9% t ON t OFF Figure 21. witching Times, ton, toff.1µf V V V IN AG842 ON OFF V IN C L 1nF V OUT V IN AG841 GN V OUT V OUT Q INJ = C L V OUT Figure 22. Charge Injection V.1µF V V IN IN V GN 5Ω AG841 V IN = AG842 V IN = 1 NETWORK ANALYZER 5Ω V V OUT R L 5Ω V IN IN.1µF V GN 5Ω NETWORK ANALYZER 5Ω V V OUT R L 5Ω OFF IOLATION = 2 LOG V OUT V V OUT WITH WITCH INERTION LO = 2 LOG V OUT WITHOUT WITCH Figure 23. Off Isolation Figure 24. Bandwidth Rev. Page 12 of 16
13 OUTLINE IMENION PIN BC.65 BC MAX COPLANARITY EATING PLANE COMPLIANT TO JEEC TANAR MO-23-AB Figure Lead Thin hrink mall Outline Transistor [C7] (K-6) imensions shown in millimeters ORERING GUIE Model Temperature Range Package escription Package Option Branding 1 AG841YKZ-5RL7 2 4 C to +125 C 6-Lead Thin hrink mall Outline Transistor (C7) K-6 VA AG841YKZ-REEL 2 4 C to +125 C 6-Lead Thin hrink mall Outline Transistor (C7) K-6 VA AG841YKZ-REEL7 2 4 C to +125 C 6-Lead Thin hrink mall Outline Transistor (C7) K-6 VA AG842YKZ-5RL7 2 4 C to +125 C 6-Lead Thin hrink mall Outline Transistor (C7) K-6 WA AG842YKZ-REEL 2 4 C to +125 C 6-Lead Thin hrink mall Outline Transistor (C7) K-6 WA AG842YKZ-REEL 2 4 C to +125 C 6-Lead Thin hrink mall Outline Transistor (C7) K-6 WA 1 Branding on this package is limited to three characters due to space constraints. 2 Z = Pb-free part. Rev. Page 13 of 16
14 NOTE Rev. Page 14 of 16
15 NOTE Rev. Page 15 of 16
16 NOTE 25 Analog evices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners /5() Rev. Page 16 of 16
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Low Capacitance, 16- and 8-Channel ±15 V/+12 V icmos Multiplexers AG126/AG127 FEATURES
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ata Sheet CMOS,.8 V to 5.5 V/±2.5 V, 3 Ω Low Voltage 4-/8-Channel Multiplexers AG78/AG79 FEATURES.8 V to 5.5 V single supply ±2.5 V dual supply 3 Ω on resistance.75 Ω on resistance flatness pa leakage
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CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPT Switch in SOT-23 FEATURES 1.8 V to 5.5 V single supply 4 Ω (max) on resistance 0.75 Ω (typ) on resistance flatness 3 db bandwidth > 200 MHz Rail-to-rail operation
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Data Sheet Low Capacitance, Low Charge Injection, ±15 V/+12 V icmos Dual SPST Switches ADG1221/ADG1222/ADG1223 FEATURES
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a FEATURE +3 V, +5 V or 5 V Power upplies Ultralow Power issipation (
More information1.5 Ω On Resistance, ±15 V/12 V/±5 V, icmos, Dual SPDT Switch ADG1436
Data Sheet.5 Ω On Resistance, ±5 V/2 V/±5 V, icmos, Dual SPDT Switch ADG436 FEATURES.5 Ω on resistance.3 Ω on-resistance flatness. Ω on-resistance match between channels Continuous current per channel
More information2.1 Ω On Resistance, ±15 V/+12 V/±5 V, ADG1419. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAMS APPLICATIONS GENERAL DESCRIPTION PRODUCT HIGHLIGHTS
ata Sheet 2. Ω On Resistance, ±5 V/+2 V/±5 V, icmos SPT Switch AG49 FEATURES 2. Ω on resistance.5 Ω maximum on-resistance flatness at 25 C Up to 39 ma continuous current Fully specified at +2 V, ±5 V,
More information4 Ω RON, 4-/8-Channel ±15 V/+12 V/±5 V icmos Multiplexers ADG1408/ADG1409
4 Ω RON, 4-/-Channel ±5 V/+ V/±5 V icmos Multiplexers AG4/AG49 FEATURES 4.7 Ω maximum on resistance @ 5 C.5 Ω on resistance flatness Up to 9 ma continuous current Fully specified at ±5 V/+ V/±5 V 3 V logic-compatible
More informationLC 2 MOS Precision Mini-DIP Analog Switch ADG419
LC 2 MOS Precision Mini-IP Analog Switch AG419 FEATURES 44 V supply maximum ratings VSS to V analog signal range Low on resistance:
More informationHigh Voltage Latch-Up Proof, 4-/8-Channel Multiplexers ADG5408/ADG5409
ata Sheet FEATURES Latch-up proof 8 kv human body model (HBM) ES rating Low on resistance (3.5 Ω) ±9 V to ±22 V dual-supply operation 9 V to 4 V single-supply operation 48 V supply maximum ratings Fully
More informationADG1606/ADG Ω RON, 16-Channel, Differential 8-Channel, ±5 V,+12 V,+5 V, and +3.3 V Multiplexers FEATURES FUNCTIONAL BLOCK DIAGRAMS
4.5 Ω RON, 6-Channel, Differential 8-Channel, ±5 V,+2 V,+5 V, and +3.3 V Multiplexers ADG66/ADG67 FEATURES 4.5 Ω typical on resistance. Ω on resistance flatness ±3.3 V to ±8 V dual supply operation 3.3
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More informationHigh Voltage, Latch-up Proof, 4-Channel Multiplexer ADG5404
ata Sheet FEATURES Latch-up proof 8 kv HBM ES rating Low on resistance (
More informationLC 2 MOS Quad SPST Switches ADG441/ADG442/ADG444
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More informationLow Voltage, 400 MHz, Quad 2:1 Mux with 3 ns Switching Time ADG774A
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More informationLC 2 MOS 8-/16-Channel High Performance Analog Multiplexers ADG406/ADG407/ADG426
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ata Sheet FEATURES Latch-up immune under all circumstances Human body model (HBM) ES rating: 8 kv Low on resistance: 13.5 Ω ±9 V to ±22 V dual-supply operation 9 V to 4 V single-supply operation 48 V supply
More informationHigh Voltage Latch-Up Proof, Triple/Quad SPDT Switches ADG5433/ADG5434
FEATURES Latch-up proof Human body model (HBM) ESD rating: 8 kv Low on resistance (13.5 Ω) ±9 V to ±22 V dual-supply operation 9 V to 4 V single-supply operation 48 V supply maximum ratings Fully specified
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More information9.5 Ω RON, ±15 V/+12 V/±5 V icmos, Serially-Controlled Octal SPST Switches ADG1414
9.5 Ω RON, ±5 V/+2 V/±5 V icmos, Serially-Controlled Octal SPST Switches FEATURES SPI interface Supports daisy-chain mode 9.5 Ω on resistance at 25 C and ±5 V dual supply.6 Ω on-resistance flatness at
More information2.5 V/3.3 V, 2:1 Multiplexer/ Demultiplexer Bus Switch ADG3248
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More informationLow Voltage, 400 MHz, Quad 2:1 Mux with 3 ns Switching Time ADG774A
Data Sheet FEATURES Bandwidth: >4 MHz Low insertion loss and on resistance: 2.2 Ω typical On resistance flatness:.3 Ω typical Single 3 V/5 V supply operation Very low distortion:
More informationADG918/ADG919. Wideband 4 GHz, 43 db Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
Wideband 4 GHz, 43 db Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches ADG918/ FEATURES Wideband switch: 3 db @ 4 GHz Absorptive/reflective switches High off isolation (43 db @ 1 GHz) Low
More informationTABLE OF CONTENTS Specifications... 3 Absolute Maximum Ratings... 4 ESD Caution... 4 Pin Configurations and Function Descriptions... 5 Terminology...
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More informationFault Protection and Detection, 10 Ω RON, 4-Channel Multiplexer ADG5404F
ata Sheet FEATURES Overvoltage protection up to 55 V and +55 V Power-off protection up to 55 V and +55 V Overvoltage detection on source pins Interrupt flags indicate fault status Low on resistance: 1
More informationHigh Speed, 3.3 V/5 V Quad 2:1 Mux/Demux (4-Bit, 1 of 2) Bus Switch ADG3257
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Wideband 4 GHz, 43 db Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT ADG918/ FEATURES Wideband switch: 3 db @ 4 GHz Absorptive/reflective switches High off isolation (43 db @ 1 GHz) Low insertion
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More informationWideband 4 GHz, 36 db Isolation at 1 GHz, CMOS, 1.65 V to 2.75 V, Dual SPDT ADG936/ADG936-R
Wideband 4 GHz, 36 db Isolation at 1 GHz, CMOS, 1.65 V to 2.75 V, Dual SPDT ADG936/ FEATURES Wideband switch: 3 db @ 4 GHz ADG936 absorptive dual SPDT reflective dual SPDT High off isolation (36 db @ 1
More informationSGM Ω, 300MHz, Low-Power Full-Speed USB (12Mbps) Switch
GENERAL ESCRIPTION The SGM2258 is a high-performance, dual, single-pole/ double-throw (SPT) CMOS analog switch designed for switching USB 1.1 signals. High bandwidth and low on-resistance make this switch
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FET Drive Simple Sequencers ADM6819/ADM682 FEATURES Single chip enables power supply sequencing of two supplies On-board charge pump fully enhances N-channel FET Adjustable primary supply monitor to.618
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FEATURES Low supply current: 25 µa max Very low input bias current: pa max Low offset voltage: 75 µv max Single-supply operation: 5 V to 26 V Dual-supply operation: ±2.5 V to ±3 V Rail-to-rail output Unity-gain
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More informationFault Protection and Detection, 10 Ω RON, Dual SPDT Switch ADG5436F
FEATURES Overvoltage protection up to 55 V and +55 V Power-off protection up to 55 V and +55 V Overvoltage detection on source pins Interrupt flags indicate fault status Low on resistance: 1 Ω (typical)
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GENERAL ESCRIPTION The SGM2258 is a high-performance, dual, single-pole/ double-throw (SPT) CMOS analog switch designed for switching USB 1.1 signals. High bandwidth and low on-resistance make this switch
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GENERAL DECRIPTION The GM7228 is a high-speed, low-power double-pole/ double-throw (DPDT) analog switch that operates from a single 1.8V to 4.3V power supply. GM7228 is designed for the switching of high-speed
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REIION LTR ECRIPTION TE PPROE Prepared in accordance with ME Y14.24 endor item drawing RE PGE RE PGE RE TTU OF PGE RE PGE 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/ PREPRE BY Phu H. Nguyen L LN N MRITIME 43218-3990
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GENERAL DESCRIPTION The SGM4684 is a dual, low on-resistance, low voltage, bidirectional, single-pole/double-throw (SPDT) CMOS analog switch designed to operate from a single 1.8V to 5.5V power supply.
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GENERAL DECRIPTION The GM7222 is a high-speed, low-power double-pole/ double-throw (DPDT) analog switch that operates from a single 1.8V to 4.3V power supply. GM7222 is designed for the switching of high-speed
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More informationPI5A4684. Chip Scale Packaging, Dual SPDT Analog Switch. Features. Description. Pin Configuration/ Block Diagram (top view) CSP.
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