A Closer Look at ASML. September 26-27, 2002

Transcription

1 A Coser Look at ASML September 26-27, 2002

2 TWINSCAN

3 Outine Introduction TWINSCAN roadmap Dua stage technoogy Productivity TWINSCAN dua stage performance Concusion

4 Outine Introduction TWINSCAN roadmap Dua stage technoogy Productivity TWINSCAN dua stage performance Concusion

5 Moore s aw Cost per bit (DRAM) (B USD/TeraBits) Moore s aw: Cost Moore s aw: Output y = 4E+22e x Jan-93 Ju-93 Jan-94 Ju-94 Jan-95 Ju-95 Jan-96 Ju-96 Jan-97 Ju-97 Jan-98 Ju-98 Jan-99 Ju-99 Jan-00 Ju-00 Cost reduction Bits: Factor of 10 in 3.5 year Die: Factor 3.15 in 3.5 year Jan-01 Ju-01 Jan-02 Moore s aw: Shrink

6 300 mm output vs cost Productivity and capita investment are main components in CoO contro 200 mm to 300 mm Ratio Investment Throughput 200 mm 300 mm CoO/die Investment Throughput 200 mm 300 mm CoO/die Simiar wafer throughput needed for 300 mm and 200 mm for significant cost reduction

7 Customer requirements at 300 mm Don t you aso need: maximum yied? Accurate aignment information to improve overay? Better focus & eveing to maximize edge die yied? Imaging performance to enabe higher resoutions?

8 Shrink nm Year Res. (hafpitch, nm) Overay (nm) UDoF (nm) Source: ITRS roadmap, 2001 issue

9 Customer requirements at 300 mm End Avaiabiity of technoogy at the right time Reiabe production soution Extendibiity

10 Outine Introduction TWINSCAN roadmap Dua stage technoogy Productivity TWINSCAN dua stage performance Concusion

11 ASML TWINSCAN product introduction TWINSCAN, patform introduced in 2000 as singe stage First system 150 nm resoution Singe stage systems used as eary earning for externa interfaces and genera patform performance TWINSCAN, dua stage, moduar design patform introduced in 2001 First dua stage appication Productivity Accuracy First product 130 nm, design ready for <70 nm Easy new product introduction Fast ramp-up of new technoogy

12 ASML 300 mm dua stage product roadmap F2 157 nm 70 nm 65 nm ArF 193 nm 75 nm 80 nm 90 nm 100 nm AT:1100 NA= nm KrF 110 nm 248 nm 130 nm i-line 280 nm 365 nm AT:850 NA=0.80 AT:750 NA=0.70 AT:400 NA=

13 Number of panned 300 mm fabs Number of new fabs TWINSCAN introduction Dua stage introduction N/A ASML TWINSCAN ready before 300 mm fab ramp up Source SEMI

14 High NA ArF projection ens

15 ASML 300 mm product roadmap F2 157 nm 70 nm MS VII NA=0.75 AT:... High NA F 2 75 nm ArF 193 nm 80 nm 90 nm 100 nm AT:1100 NA=0.75 KrF 248 nm i-line 365 nm 100 nm 110 nm 130 nm 280 nm AT:850 NA=0.80 AT:750 NA=0.70 AT:400 NA=

16 Too introduction MSVII Q Fu fied too Process deveopment for eary 157 nm earning AT: Production too for 70 nm node

17 Outine Introduction TWINSCAN roadmap Dua stage technoogy Productivity TWINSCAN dua stage performance Concusion

18 TWINSCAN dua stage technoogy better / faster / smaer BETTER technoogy eads to higher yied Word cass imaging, productivity and overay FASTER systems reduce cost per die More die / 300 mm-wafer reduces overhead per die SMALLER features reduce cost per function Improved resoution and aignment OVERALL more good die per day

19 Introducing a second wafer stage Throughput is increased significanty Taking overhead activities out of the critica path Metroogy position for overhead activities and accuracy Wafer oading and unoading Leveing and aignment data coection Exposure position for high throughput Continuous wafer exposure using pre-coected and processed data from the metroogy position

20 Dua stage productivity advantage 0 seconds 60 seconds Singe stage cyce 57 seconds = 63 wph 26 sec. 15 sec. 16 sec. Metroogy operation 32 sec. Dua stage cyce 36 seconds = 100 wph Exposure operation 5 sec. 15 sec. 16 sec. 6X more aignment data + fu wafer height map

21 Dua stage metroogy advantage 0 seconds 60 seconds Singe stage cyce 30 seconds = 120 wph 4 sec. 13 sec. 13 sec. No time for metroogy Metroogy operation 28 sec. Dua stage cyce 30 seconds = 120 wph Exposure operation 4 sec. 13 sec. 13 sec. 6X more aignment data + fu wafer height map

22 Throughput ASML TWINSCAN AT:1100B Which throughput number woud you ike (wafers/hour) Exposure dose mj/cm Exposures per wafer Industry average tpt conditions Scan speed 320 mm/sec Up to 25 aignment markers TWINSCAN ~40% faster than singe stage system

23 Outine Introduction TWINSCAN roadmap Dua stage technoogy Productivity TWINSCAN dua stage performance Concusion

24 TWINSCAN AT:1100B (ArF) - imaging without RET Binary Mask NA = 0.75, σ o = 0.85, σ i = 0.55 F: nm 300 nm TOK TArF 6063 resist 81 nm AR19 with 52 nm AQ6 E: 23.6 mj/cm 2 F:0.30 Focus 0.6 µm K 1 = 0.39 F:-0.30 Binary Mask NA = 0.75, σ o = 0.89, σ i = 0.65 F: nm 255 nm TOK TArF 6063 resist 81 nm AR19 with 52 nm AQ6 E: 24 mj/cm 2 F:0.30 Focus 0.6 µm K 1 = 0.35 F:-0.30

25 TWINSCAN AT:1100B (ArF) - imaging without RET F:-0.25 Binary Mask NA = 0.75, σ o = 0.89, σ i = 0.65 K 1 = 0.31 F: nm 255 nm TOK TArF 6063 resist 81 nm AR19 with 52 nm AQ6 E: 29.6 mj/cm 2 Focus 0.45 µm 80 nm structures can be resoved without RET

26 TWINSCAN AT:1100B (ArF) - CD contro 100 nm isoated ines Intra-fied performance Inter-fied performance CDU H = 2.6 nm CDU V = 3.7 nm CDU HV = 3.5 nm FWCDU H = 5.1 nm FWCDU V = 5.9 nm FWCDU HV = 5.7 nm

27 TWINSCAN - process overay Poy 1 to STI (front-end) dy (nm) Meta 1 to Contact (back-end) dx (nm)

28 Outine Introduction TWINSCAN roadmap Dua stage technoogy Productivity TWINSCAN dua stage performance Concusion

29 Concusion Dua stage technoogy is the standard for 300 mm ithography Productivity Accuracy Extendibiity Cost of ownership ASML TWINSCAN is ready today for 300 mm voume manufacturing ASML TWINSCAN is we prepared for tomorrow's voume manufacturing

30 A Coser Look at ASML September 26-27, 2002