2008 European EUVL. EUV activities the EUVL shop future plans. Rob Hartman

Transcription

1 2008 European EUVL EUV activities the EUVL shop future plans Rob Hartman 2007 international EUVL Symposium October international EUVL Symposium 28 Sapporo, September Japan 1 October /10/2008

2 Europe is active ROTH &RAU 2008 international EUVL Symposium 28 September 1 October 2008 Lake Tahoe European overview Rob Hartman 2

3 Co-operation in Europe Since 1997 started EUCLIDES: basic technology Followed in 2001 with MEDEA+ project cluster and in 2003 with a large project more Moore sponsored by the European Commission So what did we gain??? Come and shop!!! 2008 international EUVL Symposium 28 September 1 October 2008 Lake Tahoe European overview Rob Hartman

4 The European EUVL SHOP Two Alpha Demo Tools - ASML HVM Collector - Media Lario Technologies EUV-Reflectometer - AIXUV Collector concept for DDP SAGEM EUV quality of large and steep aspheric optics SAGEM Commercial EUVL Masks AMTC and many important achievements 2008 international EUVL Symposium 28 September 1 October 2008 Lake Tahoe European overview Rob Hartman

5 Two full field scanning Alpha Demo tools installed Alliance λ 13.5 nm NA 0.25 Field size 26 x 33 mm 2 Magnification 4x reduction Sigma 0.5 Single stage, 300mm wafers, linked to track Single reticle load Uses TWINSCAN technology (e.g. focus) Reflective optics Sn discharge source 2008 international EUVL Symposium 28 September 1 October 2008 Lake Tahoe European overview Rob Hartman

6 Sn-DPP based SoCoMo enables EUV lithography No technical showstoppers to scale to HVM power using Philips/Xtreme Sn- DPP technology Scaling with frequency and pulse energy feasible to achieve HVM requirements Integrated SoCoMo system based on experience from both Xtreme and Philips with complete Alpha systems output energy [mj/2π] khz time [s] pulse number EUV output energy [mj, 2 π] Alpha Beta HVM repetition frequency [khz] Source + Debris Mitigation + Collector module Philips/Xtreme Sn-DPP SoCoMo development is already in Beta phase: Beta source is alive and being boosted to Beta power levels 2008 international EUVL Symposium 28 September 1 October 2008 Lake Tahoe European overview Rob Hartman

7 Media Lario Technologies HVM Collector Offering MLT is expanding its core competencies to meet EUV HVM Grazing & Normal Incidence Collector for DPP & LPP Sn based Sources FIELD PROVEN GIC (Sn & Xe) COLLECTOR EVOLUTIONARY NIC (Sn) COLLECTOR CoO & Cycle Time High accuracy replication by e-forming Thermally Managed High Shape Accuracy & Highly Aspherical Optics Offering Wave Front Error 632 nm) λ/10 λ/40 λ/ international EUVL Symposium September 28 October 1, 2008 Lake Tahoe, CA Year 7 10/10/2008

8 EUV-Reflectometer for EUV Masks and Mask Blanks (EUV-MBR) Feature Spot Size Spectral channel Measurement of 2000 channels Performance < 50*500 µm² 1.6 pm < 30 seconds CWL_50 Precision Accuracy < 3 pm 3σ < 5 pm 3σ Reflectivity on reflector R > 60% Precision Accuracy 0.3% 3σ 0.5% 3σ Reflectivity on Absorber R < 2% Precision Accuracy 0.05 % 3σ 0.1 % 3σ 70% 1.2% 60% 1.0% Reflectance 50% 40% 30% 20% reflectan ce 0.8% 0.6% 0.4% % 0.2% 0% Wavelength, nm 0.0% wavelength [nm] One tool is made available for routine use in Aachen

9 Sensitivity to small changes (out of center measurements) 70% 70.4% 70.3% ΔR = 0.06 % Δλ = 18 pm 1 60% Reflectance 70.2% 70.1% 70.0% 69.9% ΔR = 0.1 % Δλ = 10 pm ΔR = 0.55 % % 69.8% Δλ = 2 pm 10 b c 69.7% d Reflectance 40% 30% Reflectance 3.7% 3.5% 3.3% 3.1% 2.9% 2.7% Edge b 69.6% 69.5% Wavelength, nm 20% 2.5% Wavelength, nm 10% Peak reflectance = % ± 0.08 % (3σ) Central wavelength = nm ± 0.4 pm 0% Wavelength of peak reflection = nm ± 0.8 pm FWHM = nm± 0.4 pm Wavelength, nm

10 Precision and sensitivity also on absorbers 5 measurements on absorbing blank 1.2% 1.0% reflectance 0.8% 0.6% 0.4% % 0.0% Peak reflectance = % ± % (1σ) Central wavelength = nm ± 1.1 pm FWHM = nm ± 2.3 pm wavelength [nm]

11 EUV-Sources for Metrology Automatic 1 W R&D manual 1 W Automatic 5 W

12 Commercial masks by AMTC 4th Internanional Symposium on EUVL San Diego, 7-9 November 2005 European overview Rob Hartman

13 AMTC / TPI Dresden EUV Mask Status The Dresden campus has a fully-integrated commercial EUV mask fabrication line established and accepting orders via Toppan Photomask. Many deliveries already made over several years to various users of the full-field EUV exposure systems including test plates and real product demonstrations. All processes are established in Dresden including inspection with dieto-die capability to P72 pixel size and repair by nano-machining and e- beam. Defect printability studies to be published in the coming 3 weeks at the EUV Symposium and SPIE BACUS including SRAM electrical characterization and mask wafer defect correlation on a 45nm node product design. AMTC CONFIDENTIAL

14 Examples of EUV Mask Defects Contamination Particle Blank Defect Pattern Defect Mask SEM Mask Inspection Defect types are difficult to differentiate from inspection image alone AMTC CONFIDENTIAL

15 /3100 coatings in full FOM FOM 70.0% 60.0% 50.0% Data PTB, Berlin Local angle of incidence (spol) Reflectance 40.0% 30.0% 20.0% 10.0% R = 69.6% s-polarized 0.0% Wavelength (nm) Results Results /3100 /3100 optics optics depositions depositions >69% >69% reflectivity reflectivity including including improved improved capping capping layer layer and and diffusion diffusion barriers barriers Total Total coating coating stack stack non non correctable correctable thickness thickness error error pm pm rms rms Figure error [nm] 0.20 X-direction Y-direction Radial distance [mm]

16 Resist performance on ASML ADT NA=0.25, σ=0.5 Dense and iso line resolution 40nm 35nm 32nm CD DL = 38.0nm CD ISO = 34.1nm CD DL = 36.1nm CD ISO = 30.4nm CD DL = 30nm CD ISO = 21.5nm Reference resist Fuji FEVS-P mJ/cm2 LER=5.5nm X-sectional profiles of advanced resists Resist A Resist B 40L80P 29.5mJ/cm2 LER=3.8nm 40L80P 14.2mJ/cm2 LER=4.8nm ASML ADT at IMEC 35nm 1:1 28nm 1:1 35L70P 35L70P 32L64P 32L64P

17 32nm SRAM device with EUV Lithography on contact level Design Reticle SEM Lithography : Exposure latitude 11mJ/cm 2 13 mj/cm 2 15 mj/cm 2 17 mj/cm 2 Active fin Poly fin Contact Simulated resist image 50.2nm 57.4nm 61.6nm 63.0nm After Oxide etch 53.4nm 60.4nm 63.7nm 64.5nm Electrically functional 0.186μm 2 32nm node SRAM cells demonstrated using EUVL for contact hole patterning

18 M. Goethals imec

19 The European EUVL plans new co-operative project under CATRENE CATRENE, an EUREKA Project, is the successor of MEDEA+ Project is named EXEPT 4th Internanional Symposium on EUVL San Diego, 7-9 November 2005 European overview Rob Hartman

20 EXEPT: 1350 manyears EXEPT project is to develop technologies, tools and infrastructure components as required for high volume EUV lithography for 22nm hp structures in th Internanional Symposium on EUVL San Diego, 7-9 November 2005 European overview Rob Hartman

21 ASML EUVL Roadmap NXE platform supports manufacturing down to 11nm Res nm 0.4x NA 16 nm 22 nm same projection system, enhanced off-axis illumination 0.32 NA, off axis illumination, 180wph 0.32 NA, 3 nm OVL, ~150wph 27 nm 0.25 NA, 4nm OVL, 60->100wph ADT 0.25 NA, 8nm OVL preparation implementation volume production EUVL Symposium, Lake Tahoe, USA (28Sep 08) Slide 21

22 First production system design is finished and module manufacturing ongoing EUVL Symposium, Lake Tahoe, USA (28Sep 08) Slide 22

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24 EUVL Cleaning Challenges Understand. Align. Innovate. Develop. Drivers: Absence of protective pellicle Vulnerable surface material of sophisticated dielectric mirrors Fragile pattern structures (22nm/16nm) Exposure under vacuum Requirements: 100% removal of sub-20nm particles Residue free cleaning to avoid outgassing Elimination CD-line width and overlay shift Maintain mechanical properties Protect mask capping layer Preserve pattern integrity Traditional isolated cleaning methodologies are no longer effective to eliminate contamination while maximizing MTBC and the lifetime of the reticle. 24 HamaTech APE released for publication, Sept. 2008

25 HamaTech EUVL Progress Understand. Align. Innovate. Develop. Extended proven 32/22nm cleaning technology to EUVL development Successfully completed EUV blank cleaning milestones at Sematech Achieved particle-free EUV blanks down to 30nm Demonstrated technical achievement of 10nm defect removal Developed critical specific-area cleaning techniques Established global network of development partnerships 25 HamaTech APE released for publication, Sept. 2008

26 EUV Mask Cleaning Development Understand. Align. Innovate. Develop. Launch of MaskTrack Pro 1H09 (EUVL and 22nm) Develop innovative advanced cleaning concepts New physical and chemical methods Targeted Spot Cleaning (TSC) Dry clean technology development Establish holistic mask management approach Expand cleaning process to include storage, clean and metrology On-demand cleaning of specific areas or particles MaskTrack Pro design allows clustering Aligned with development partners for Handling/Storage Metrology (co-operation with OEMs) Standalone: in-fab concept Integrated: in-litho concept scanner, clean, inspection and storage MT Pro System In-Litho Concept 26 HamaTech APE released for publication, Sept. 2008

27 EXEPT: 1350 manyears EXEPT project is to develop technologies, tools and infrastructure components as required for high volume EUV lithography for 22nm hp structures in th Internanional Symposium on EUVL San Diego, 7-9 November 2005 European overview Rob Hartman