Radiation Effects in Emerging Technologies for Hardened Systems

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1 Radiation Effects in Emerging Technologies for Hardened Systems 2015 MRQW 28 January, 2015 Sarah Armstrong, Matthew Kay, Austin Roach, Adam Duncan, Matthew Halstead, and Matthew Gadlage NSWC Crane, Crane, IN

2 IR&D Radiation Effects Research FY14 Radiation-Related Projects Embedded and Standalone Floating Gate Memory Exploration --PI: Matthew Kay Ensuring Integrity of Next-Generation Commercial-Off-The-Shelf Field Programmable Gate Arrays for Trusted Applications PI: Matthew Gadlage Radiation Effects in Gallium Nitride PI: Sarah Armstrong FY15 Radiation-Related Projects Radiation Effects in GaN Devices PI: Sarah Armstrong Assessment of Emerging Nonvolatile Memory Technologies: ReRAM and CNT NRAM PI: Austin Roach FinFET Technology Assessment for Trusted and Strategic Systems PI: Adam Duncan Impact of Single Electron Effects and Defects on the Reliability and Trust of DoD Electronics PI: Matthew Gadlage Multi-Die Package Decapsulation and Delayering for Failure Analysis, Trust Assessment, and Counterfeit Detection in Scaled COTS Microelectronics PI: Eric Whitney Semiconductor Neutron Radiation Damage Time and Spectral Dependence Studies PI: Matthew Halstead 2

3 Non-Volatile Memory Recent non-volatile memory research has focused on NAND/NOR Flash, MRAM, and CBRAM: Explored radiation effects in 42-nm and 60-nm NAND Flash from Samsung [presented at the 2014 HEART conference] Looked at the impact of positive and negative traps in the embedded Flash of an MSP430 microcontroller [to be presented at the 2015 GOMAC conference] Shown that no latent failures are present following a heavy-ion irradiation on a Honeywell MRAM [to be presented at the 2015 GOMAC conference] Began characterizing the radiation response of Adesto CBRAM cells [to be presented at the 2015 HEART conference] 3

4 FPGAs NSWC Crane is involved in a wide-range of FPGA work for the DoD (including trust, anti-counterfeit, and radiation effects) Some of our recent radiation work includes: Prompt-dose testing of the V5-QV [presented at the 2014 HEART conference] Exploring low-voltage electron-induced SEUs in 45-nm FPGAs [presented at the 2014 HEART and SEE/MAPLD conferences] Comparing the radiation and aging response in 28-nm Xilinx FPGAs [to be presented at the 2015 GOMAC conference] Electron-LINAC upsets in 45-nm and 28-nm FPGAs [to be presented at the 2015 HEART conference] 4

5 FinFET FPGAs and Processors In FY15, we are exploring trust, reliability, and radiation effects issues with FinFET FPGAs and processors, leveraging our NDA with Intel (in place) Recently completed work: Designed a board to test the Achronix 22-nm Speedster FPGA Discussed soft error testing with Tabula and their FPGAs Working on Intel s 22-nm FinFET processors Achronix DUT Board Design 5

6 Radiation Effects in Gallium Nitride High-Speed Devices Test GaN transistors and MMICs in hardened environments Testability GaN Laser Testing At-speed LINAC test Design Assessment of physics of failure, design of gate stacks for hardened applications Power Devices Compare Si, GaN, SiC, and other technologies for suitability in hardened application 6

7 Resistive RAM (ReRAM) ITRS 2013 lists Resistive RAM as a promising emerging memory technology Low power, easy integration into BEOL, highly scalable, potential for fast operation and high endurance Active development by many companies: Adesto: Commercially available CBRAM (Conductive-Bridging RAM) EEPROM replacement Panasonic: Commercially available microcontroller with embedded ReRAM Crossbar: Integrating technology into TSMC s backend-of-line for SOC applications Hewlett-Packard/Hynix: Developing a Memristorbased universal memory dense, nonvolatile memory with DRAM-like speeds Sony, NEC, Samsung, Micron, Sandisk, Toshiba, others experimenting with ReRAM ReRAM cell in Cu BEOL 1 1. C. Gopalan et al., Demonstration of Conductive Bridging Random Access Memory (CBRAM) in Logic CMOS Process, Solid-State Electron., vol. 58, no. 1, pp.54-61,

8 ReRAM: how does it work? Resistance of bit cell can be electrically modified Resistance measured to read information CBRAM operation: Metal electrodes separated by a solid electrolyte Applied potential electrochemically forms a conducting filament between the electrodes Reversing the potential dissolves the filament Other variants use the movement of oxygen vacancies in transition metal oxides Image from I. Valov et al., Electrochemical Metallization Memories Fundamentals, Applications, Prospects, Nanotechnology, vol. 22, no. 28, p ,

9 Previous work on CBRAM reliability Characteristics of cells widely tunable (materials, dimensions, electrical operation) Allows tradeoffs between endurance, data retention, speed, etc. Can support multiple bits per cell Early indications of inherent radiation tolerance No errors in CBRAM cells after exposure to Co-60 gamma rays at maximum applied dose of 447 krad 1 No significant changes to the resistance switching characteristics of bit cells after maximum applied dose of 10 Mrad 2 Adesto markets CBRAM for radiation sterilization applications, specifies up to 20 Mrad gamma or e-beam 3 1. Y. Gonzalez-Velo et al., Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory, IEEE Electron Device Lett., vol. 35, no. 2, pp , P. Dandamudi et al., Total Ionizing Dose Tolerance of Ag-Ge 40 S 60 based Programmable Metallization Cells, IEEE Trans. Nucl. Sci, vol. 61, no. 4, pp , Adesto Technologies, RM24EP128A datasheet, DS-RM24EP , Available online at 9

10 CBRAM testing at NSWC Crane Testing Adesto s CBRAM in collaboration with NASA GSFC Bit cells retained data after: 3 Mrad(CaF 2 ) exposure to 100 kev x-rays Exposure to 1x MeV-equivalent neutrons/cm 2 1.3x10 7 cm -2 of 1858 MeV Ta ions (LET = 79 MeV cm 2 /mg) Numerous SEFIs during heavy ion exposure Devices do not use a radiation-hardened CMOS Transients in peripheral circuitry or bit cell access transistors Inherent radiation tolerance, ease of integration into BEOL make ReRAM technology a good candidate for integration into hardened systems 10

11 FinFET FY15 Activities FinFET Intel 22nm FinFET transistor FinFET vs Planar IV characteristics Crane researching next generation FinFETs Radiation effects Long term reliability 11

12 FinFET FY15 Activities Preparing test articles for upcoming tests Intel 22nm Atom processor Achronix 22nm FPGA (Intel FinFET process) IBM 14nm SOI FinFET test structures (maybe?) Radiation effects testing Electron single event effects (Arnold Air Force Base STAT) Heavy ion single event effects (Texas A&M) Total ionizing dose (Crane) Modeling TCAD simulation of charged particle interactions 12

13 GaN Approach/Methodology GaN transistors and amplifiers were tested in multiple facilities 1. neutron 2. x-ray 3. total-ionizing dose 4. heavy-ion TriQuint High Power Amplifier (HPA) (1,2,3) Cree HPA (4) Cree transistors (2,4) 13

14 Initial Testing TriQuint Semiconductor High Power Amplifiers (HPAs) BW: 30 MHz 3 GHz Electrical Characterization of output power and drain current performed Parts sent to White Sands Missile Range for neutron irradiation to a fluence of 1x10 13 to 1x10 14 neutrons/cm 2 14

15 GaN Transistors Cree CGH40025F GaN Unmatched HEMT 25W, up to 6.0 GHz Evaluation board provides matching to 50Ω for frequency range GHz 15

16 GaN Results/Deliverables TONS of test data 2015 GOMAC Single-Event Effects in Commercial-off-the-Shelf Gallium Nitride Amplifiers Highlights potential single-event issues for MMIC devices operating under RF compression 2015 HEART Neutron and X-ray Irradiation of COTS Gallium Nitride Power Amplifier Highlights potential gate leakage issue Multiple collaboration opportunities for FY15 GaN Technology Research Combined Working Group: AFRL, NRL, Vanderbilt, JPL 16

17 Summary NSWC Crane supports numerous customers with radiation effects and trusted electronics work Including SSP, MDA, Air Force, DARPA, and others The NISE/219 program funds a large amount of radiation effects research at Crane SPECTRA Lab recently created - (Semiconductor Physics for Electronic Component Trust and Reliability Advancement) 17