Single Pulsed (Note 4) E AS 1100 mj Repetitive (Note 5) E AR 29 mj Peak Diode Recovery dv/dt (Note 5) dv/dt 15 V/ns 290 TO-3PL P D 220

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1 500V N-Channel MOSFET Voltage 500 V Current 24A Features: R D@ 12.0A<0.25 High switching speed Improved dv/dt capability Low Gate Charge Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) ABSOLUTE MAXIMUM RATINGS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage S 500 V Gate-Source Voltage S ±30 V Drain Current Continuous (T C =25 C) I D 24(Note 2) A Pulsed (Note 3) I DM 96 (Note 2) A Avalanche Current (Note 3) I AR 24 A Avalanche Energy Single Pulsed (Note 4) E AS 1100 mj Repetitive (Note 5) E AR 29 mj Peak Diode Recovery dv/dt (Note 5) dv/dt 15 V/ns Power Dissipation 290 P D 220 W Derate above 25 C 2.33 W/ C Junction Temperature T J +150 C Storage Temperature T STG -55~+150 C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Drain current limited by maximum junction temperature 3. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L =3.4mH, I AS = 24A, = 50V, R G = 25Ω, Starting T J = 25 C 5. I SD 24A, di/dt 200A/µs, BS, Starting T J = 25 C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient 40 θ JA 30 C/W Junction to Case 0.43 θ JC 0.34 C/W PART NO PACKING CODE VERSION Part No Packing Code Package Type Packing type Marking Version SMP24N50_T0_ pcs / Tube 24N50 Halogen free SMP24N50_T0_ pcs / Tube 24N50 Halogen free HUAKE semiconductors /5

2 ELECTRICAL CHARACTERISTICS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BS I D =250µA, =0V 500 V Drain-Source Leakage Current I DSS =500V, =0V 50 µa Gate- Source Leakage Current Forward =+30V, =0V +100 na I GSS Reverse =-30V, =0V -100 na ON CHARACTERISTICS Gate Threshold Voltage (TH) =, I D =250µA V Static Drain-Source On-State Resistance R DS(ON) =, I D =12A Ω DYNAMIC PARAMETERS Input Capacitance C ISS pf Output Capacitance C OSS =0V, =25V, f=1.0mhz pf Reverse Transfer Capacitance C RSS pf ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SWITCHING PARAMETERS Total Gate Charge Q G nc =, =400V, I D =24A Gate to Source Charge Q GS 23 nc (Note 1, 2) Gate to Drain Charge Q GD 52 nc Turn-ON Delay Time t D(ON) ns Rise Time t R =250V, I D =24A, R G =25Ω ns Turn-OFF Delay Time t D(OFF) (Note 1, 2) ns Fall-Time t F ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current I S 24 A Maximum Body-Diode Pulsed Current I SM 96 A Drain-Source Diode Forward Voltage V SD I S =24A, =0V 1.4 V Body Diode Reverse Recovery Time t rr I S =24A, =0V, 250 ns Body Diode Reverse Recovery Charge Q RR di F /dt=100a/µs (Note 1) 1.1 µc Note: 1. Pulse Test: Pulse width 300µs, Duty cycle 2% 2. Essentially independent of operating temperature HUAKE semiconductors /5

3 TEST CIRCUITS AND WAVEFORMS Gate Charge Test Circuit Gate Charge Waveforms Same Type as 12V Q G 200nF 50kΩ 300nF Q GS Q GD 3mA Charge Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms BS E AS = LIAS BS - R G I D L BS I AS I D (t) t P (t) t P Time HUAKE semiconductors /5

4 TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms + R G - L I SD Driver Same Type as dv/dt controlled by R G I SD controlled by pulse period (Driver) Gate Pulse Width D= Gate Pulse Period I FM, Body Diode Forward Current I SD () di/dt I RM Body Diode Reverse Current () Body Diode Recovery dv/dt V SD Body Diode Forward Voltage Drop HUAKE semiconductors /5

5 Packaging Information Dimension Unit: mm Dimension Unit: mm Disclaimer Reproducing and modifying information of the document is prohibited without permission from HuaKe semiconductor Inc.. Huake semiconductor Inc. reserves the rights to ma ke changes of the content herein the document anytime without notification. Please refer to our website for the latest document. Huake semiconductor Inc. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. Huake semiconductor Inc. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. Huake semiconductor Inc..makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. The products shown herein are not designed and authorized for equipments requiring high level of reliability or relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Huake semi Inc. for any damages resulting from such improper use or sale. Since Huake uses lot number as the tracking base, please provide the lot number for tracking when complaining. HUAKE semiconductors /5