Half Bridge IGBT MTP (Warp Speed IGBT), 114 A

Transcription

1 Half Bridge IGBT MTP (Warp Speed IGBT), 4 A MTP PRIMARY CHARACTERISTICS V CES 6 V V CE(on) typical at V GE = 5 V 2.3 V I C at T C = 25 C 4 A Speed 3 khz to khz Package MTP Circuit configuration Half bridge FEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E786 Designed and qualified for industrial level Material categorization: for definitions of compliance please see BENEFITS Optimized for welding, UPS and SMPS applications Low EMI, requires less snubbing Direct mounting to heatsink PCB solderable terminals Very low stray inductance design for high speed operation ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V T C = 25 C 4 Continuous collector current I C T C = C 5 Pulsed collector current I CM 35 Peak switching current I LM 35 A Diode continuous forward current I F T C = C 34 Peak diode forward current I FM 2 Gate to emitter voltage V GE ± 2 RMS isolation voltage V ISOL Any terminal to case, t = min 25 V T C = 25 C 658 Maximum power dissipation P D T C = C 263 W Collector to emitter voltage V CE(on) Diode forward voltage drop V FM ELECTRICAL SPECIFICATIONS (T J = 25 C unless otherwise specified) Collector to emitter breakdown voltage V (BR)CES V GE = V, I C = 5 μa V V GE = 5 V, I C = A V GE = 5 V, I C = 5 A, T J = 5 C V V GE = 5 V, I C = 5 A Gate threshold voltage V GE(th) I C =.5 ma 3-6 V GE = V, I C = 6 A Collector to emitter leaking current I CES V GE = V, I C = 6 A, T J = 5 C - - ma I F = 5 A, V GE = V, T J = 5 C V I F = 5 A, V GE = V I F = A, V GE = V, T J = 25 C Gate to emitter leakage current I GES V GE = ± 2 V - - ± 25 na Revision: -Oct-7 Document Number: 4468 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 SWITCHING CHARACTERISTICS (T J = 25 C unless otherwise specified) Total gate charge (turn-on) Q g IC = 52 A Gate to emitter charge (turn-on) Q ge V CC = 4 V nc Gate to collector charge (turn-on) Q gc V GE = 5 V Turn-on switching loss E on Internal gate resistors (see electrical diagram) Turn-off switching loss E off I C = 5 A, V CC = 48 V, V GE = 5 V, L = 2 μh energy losses include tail and diode reverse mj Total switching loss E ts recovery, T J = 25 C Turn-on switching loss E on Internal gate resistors (see electrical diagram) Turn-off switching loss E off I C = 5 A, V CC = 48 V, V GE = 5 V, L = 2 μh energy losses include tail and diode reverse mj Total switching loss E ts recovery, T J = 5 C Input capacitance C ies VGE = V Output capacitance C oes V CC = 3 V pf Reverse transfer capacitance C res f =. MHz Diode reverse recovery time t rr ns V CC = 2 V, I C = 5 A Diode peak reverse current I rr di/dt = 2 A/μs A Diode recovery charge Q rr nc Diode reverse recovery time t rr VCC = 2 V, I C = 5 A ns Diode peak reverse current I rr di/dt = 2 A/μs A Diode recovery charge Q rr T J = 25 C nc THERMISTOR SPECIFICATIONS Resistance R () T = 25 C k Sensitivity index of the thermistor material Notes () T, T are thermistor s temperatures R (2) = exp , temperature in Kelvin R T T ()(2) T = 25 C T = 85 C K THERMAL AND MECHANICAL SPECIFICATIONS Operating junction IGBT, diode -4-5 T J temperature range Thermistor C Storage temperature range T Stg Junction to case IGBT R thjc Diode Case to sink per module R thcs Heatsink compound thermal conductivity = W/mK Clearance () External shortest distance in air between 2 terminals Creepage () Note () Standard version only i.e. without optional thermistor Shortest distance along the external surface of the insulating material between 2 terminals Mounting torque to heatsink A mounting compound is recommended and the torque should be checked after 3 hours to allow for 3 ± % Nm the spread of the compound. Lubricated threads. Weight 66 g C/W mm Revision: -Oct-7 2 Document Number: 4468 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 I C - Collector to Emitter Current (A) 4468_. V GE = 5 V 2 μs pulse width T J = 5 C T J = 25 C. V CE - Collector to Emitter Voltage (V) V GE - Gate to Emitter Voltage (V) 4468_ V CC = 4 V I C = 52 A O G - Typical Gate Charge (nc) Fig. - Typical Output Characteristics Fig. 4 - Typical Gate Charge vs. Gate to Emitter Votlage Maximum DC Collector Current (A) I F - Instantaneous Forward Current (A).4 T J = 5 C T J = 25 C T J = 25 C _2 T C - Case Temperature ( C) 4468_5 V FM - Forward Voltage Drop (V) Fig. 2 - Maximum Collector Current vs. Case Temperature Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current V CE - Typical Collector to Emitter Voltage (V) I C = A I C = 5 A I C = 2 A t rr (ns) V R = 2 V I F = 5 A, T J = 25 C I F = 5 A, T J = 25 C 4468_3 T J - Junction Temperature ( C) 4468_6 di F /dt (A/µs) Fig. 3 - Typical Collector to Emitter Voltage vs. Junction Temperature Fig. 6 - Typical Reverse Recovery Time vs. di F /dt Revision: -Oct-7 3 Document Number: 4468 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 V R = 2 V 3, 4 I F = 5 A, T J = 25 C T 2 I RRM (A) I F = 5 A, T J = 25 C 2 5, 6 R 4468_7 di F /dt (A/µs) Fig. 7 - Typical Reverse Recovery Current vs. di F /dt 7, 8 Fig. - Functional Diagram Thermistor option 2 V R = 2 V 3, 4 5 Ω Q rr (nc) I F = 5 A, T J = 25 C 2 Ω 5, 6 5 Ω I F = 5 A, T J = 25 C Ω 4468_8 di F /dt (A/μs) Fig. 8 - Typical Stored Charge vs. di F /dt 7, 8 Fig. - Electrical Diagram ORDERING INFORMATION TABLE Device code VS- 5 MT 6 W H T A PbF product 2 - Current rating (5 = 5 A) 3 - Essential part number 4 - Voltage rating (6 = 6 V) 5 - Speed / type (W = warp IGBT) 6 - Circuit configuration (H = half bridge) 7 - T = thermistor 8 - A = Al 2 O 3 substrate - Lead (Pb)-free Revision: -Oct-7 4 Document Number: 4468 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 CIRCUIT CONFIGURATION Dimensions LINKS TO RELATED DOCUMENTS Revision: -Oct-7 5 Document Number: 4468 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Outline Dimensions MTP DIMENSIONS in millimeters 2 ± ±.3 2 ±.3 Ø. ± z detail ±. 45 ± ±.5 6 ±.3 Use self tapping screw or M 2.5 x X e.g. M 2.5 x 6 or M 2.5 x 8 according to PCB thickness used.8 Ra ± ± ±.5.8 ± Ø 2. (x 4) R 2.6 (x 2) Dia. 5 (x 4) 27.5 ±.3 Pins position with tolerance Note Unused terminals are not assembled in the package Revision: -Jul-5 Document Number: 575 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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