Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

Transcription

1 PD -957 INSULTED GTE BIPOLR TRNSISTOR IRG4PC4SPbF Standard Speed IGBT Features C Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247C package Lead-Free G E n-channel V CES = 6V V CE(on) typ. GE = 5V, I C = 3 Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's bsolute Maximum Ratings TO-247C Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 6 V I T C = 25 C Continuous Collector Current 6 I T C = C Continuous Collector Current 3 I CM Pulsed Collector Current 2 I LM Clamped Inductive Load Current 2 V GE Gate-to-Emitter Voltage ± 2 V E RV Reverse Voltage valanche Energy ƒ 5 mj P T C = 25 C Maximum Power Dissipation 6 P T C = C Maximum Power Dissipation 65 W T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Soldering Temperature, for seconds 3 (.63 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case.77 R θcs Case-to-Sink, Flat, Greased Surface.24 C/W R θj Junction-to-mbient, typical socket mount 4 Wt Weight 6 (.2) g (oz) 4/23/4

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 25µ V (BR)ECS Emitter-to-Collector Breakdown Voltage 8 V V GE = V, I C =. V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.75 V/ C V GE = V, I C =.m.32.5 I C = 3 V GE = 5V V CE(ON) Collector-to-Emitter Saturation Voltage.68 I C = 6 See Fig.2, 5 V.32 I C = 3, T J = 5 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 25µ V GE(th) / T J Temperature Coeff. of Threshold Voltage -9.3 mv/ C V CE = V GE, I C = 25µ g fe Forward Transconductance 2 2 S V CE = V, I C = 3 25 V GE = V, V CE = 6V I CES Zero Gate Voltage Collector Current µ 2. V GE = V, V CE = V, T J = 25 C V GE = V, V CE = 6V, T J = 5 C I GES Gate-to-Emitter Leakage Current ± n V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 5 I C = 3 Q ge Gate - Emitter Charge (turn-on) 4 2 nc V CC = 4V See Fig. 8 Q gc Gate - Collector Charge (turn-on) 34 5 V GE = 5V t d(on) Turn-On Delay Time 22 t r Rise Time 8 T J = 25 C ns t d(off) Turn-Off Delay Time I C = 3, V CC = 48V t f Fall Time V GE = 5V, R G = Ω E on Turn-On Switching Loss.45 Energy losses include "tail" E off Turn-Off Switching Loss 6.5 mj See Fig.,, 3, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time 23 T J = 5 C, t r Rise Time 2 I C = 3, V CC = 48V ns t d(off) Turn-Off Delay Time V GE = 5V, R G = Ω t f Fall Time 94 Energy losses include "tail" E ts Total Switching Loss 2 mj See Fig. 3, 4 L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 22 V GE = V C oes Output Capacitance 4 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 26 ƒ =.MHz Notes: Repetitive rating; V GE = 2V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 8%(V CES ), V GE = 2V, L = µh, R G = Ω, (See fig. 3a) Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2

3 8 Load Current () 6 4 Square wave: 6% of rated voltage For both: Duty cycle: 5% T J = 25 C T sink = 9 C Gate drive as specified Power Dissipation = 35W Triangular wave: Clamp voltage: 8% of rated 2 Ideal diodes. f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) I C, Collector-to-Emitter Current () T J = 25 C T J = 5 C V GE = 5V 2µs PULSE WIDTH. V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current () T J = 5 C T J = 25 C V CC = 5V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current () T C, Case Temperature ( C) V GE = 5V Fig. 4 - Maximum Collector Current vs. Case Temperature V CE, Collector-to-Emitter Voltage (V) 2..5 V GE = 5V 8µ s PULSE W IDTH I C = 62 I C = 3 I C = T, Junction Temp erature ( C) J Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ). D = SINGLE PULSE.2 (THERML RESPONSE) Notes:.. Duty factor D = t / t 2 2. Peak T J = P DMx Z thjc + T C t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case P DM t t 2 4

5 C, Capacitance (pf) V GE = V, f = MHz C ies = C ge + C gc, C ce SHORTED C res = C gc C oes = C ce + C gc C ies C oes C res V GE, Gate-to-Emitter Voltage (V) V I CE C = 4V = 3 V CE, Collector-to-Emitter Voltage (V) Q g, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 48V V GE = 5V T J = 25 C I C = 3 Total Switching Losses (mj) R G = Ω V GE = 5V V CC = 48V I C = 62 I C = 3 I C = R G, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance T, Junction Temp erature ( C) J Fig. - Typical Switching Losses vs. Junction Temperature 5

6 Total Switching Losses (mj) 3 2 R G = Ω T J = 5 C V CC = 48V V GE = 5V I, Collector-to-Emitter Current () C V GE = 2V T = 25 C J SFE OPERTING RE I C, Collector-to-Emitter Current () V, Collector-to-Emitter Voltage (V) CE Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SO 6

7 5V V L V * C D.U.T. - 48V 48µF 96V R L = 48V 4 X I C * Driver same ty pe as D.U.T.; Vc = 8% of Vce(max) * Note: Due to the 5V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 5V V L Driver* D.U.T. V C ƒ Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 48V 9% ƒ % V C 9% t d(off) Fig. 4b - Switching Loss Waveforms I C 5% % t d(on) t r E on E ts = (E on +E off ) 7 t f E off t=5µs

8 TO-247C Package Outline Dimensions are shown in millimeters (inches) TO-247C Part Marking Information EXMPLE: THIS IS N IRFPE3 WIT H S S EMB LY LOT CODE 5657 S SEMBLED ON WW 35, 2 IN THE S SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RECTIFIER LOGO S SEMBLY LOT CODE IRFPE3 35H PRT NUMBER DT E CODE YER = 2 WEEK 35 LINE H IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information. Data and specifications subject to change without notice. 4/4 8

9 Note: For the most current drawings please refer to the IR website at: