IRF6645 DirectFET Power MOSFET
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- Anne Lambert
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1 Typical R S (on) (mω), Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l ual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l Compatible with existing Surface Mount Techniques P IRF6645 irectfet Power MOSFET Typical values (unless otherwise specified) V SS R S(on) 0V max ±20V max 28mΩ@ V Q g tot Q gd V gs(th) 4nC 4.8nC 4.0V Applicable irectfet Outline and Substrate Outline (see p.7,8 for details) SJ irectfet ISOMETRIC SH SJ SP MZ MN escription The IRF6645 combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6645 is optimized for primary side bridge topologies in isolated C-C applications, for wide range universal input Telecom applications (36V - 75V), and for secondary side synchronous rectification in regulated C-C topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated C-C converters. Absolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 0 V Gate-to-Source Voltage ±20 T A = 25 C Continuous rain V e 5.7 T A = 70 C Continuous rain V e 4.5 A T C = 25 C Continuous rain V f 25 I M Pulsed rain Current g 45 E AS Single Pulse Avalanche Energy h 29 mj I AR Avalanche Currentg 3.4 A I = 3.4A 2 I = 3.4A V S = 80V VS= 50V T J = 25 C T J = 25 C , Gate-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in. square Cu board, steady state. Starting T J = 25 C, L = 5.0mH, R G = 25Ω, I AS = 3.4A. 8/5/05
2 IRF6645 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS rain-to-source Breakdown Voltage 0 V = 0V, I = 250µA ΒV SS / T J Breakdown Voltage Temp. Coefficient 0.2 V/ C Reference to 25 C, I = ma R S(on) Static rain-to-source On-Resistance mω = V, I = 5.7A c (th) Gate Threshold Voltage V V S =, I = 50µA (th) / T J Gate Threshold Voltage Coefficient -2 mv/ C I SS rain-to-source Leakage Current 20 µa V S = 0V, = 0V 250 V S = 80V, = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 0 na = 20V Gate-to-Source Reverse Leakage -0 = -20V gfs Forward Transconductance 7.4 S V S = V, I = 3.4A Q g Total Gate Charge 4 20 Q gs Pre-Vth Gate-to-Source Charge 3. V S = 50V Q gs2 Post-Vth Gate-to-Source Charge 0.8 nc = V Q gd Gate-to-rain Charge I = 3.4A Q godr Gate Charge Overdrive 5.3 See Fig. 5 Q sw Switch Charge (Q gs2 Q gd ) 5.6 Q oss Output Charge 7.2 nc V S = 6V, = 0V R G Gate Resistance.0 Ω t d(on) Turn-On elay Time 9.2 V = 50V, = Vc t r Rise Time 5.0 I = 3.4A t d(off) Turn-Off elay Time 8 ns R G =6.2Ω t f Fall Time 5. C iss Input Capacitance 890 = 0V C oss Output Capacitance 80 pf V S = 25V C rss Reverse Transfer Capacitance 40 ƒ =.0MHz C oss Output Capacitance 870 = 0V, V S =.0V, f=.0mhz C oss Output Capacitance 0 = 0V, V S = 80V, f=.0mhz iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 25 (Body iode) A I SM Pulsed Source Current 45 (Body iode)d V S iode Forward Voltage.3 V t rr Reverse Recovery Time 3 47 ns Q rr Reverse Recovery Charge nc MOSFET symbol showing the integral reverse p-n junction diode. G S T J = 25 C, I S = 3.4A, = 0V c T J = 25 C, I F = 3.4A, V = 50V di/dt = 0A/µs c Notes: Pulse width 400µs; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature. 2
3 Absolute Maximum Ratings IRF6645 Parameter Max. Units A = 25 C Power issipation c 3.0 W A = 70 C Power issipation c.4 C = 25 C Power issipation f 42 T P Peak Soldering Temperature 270 C T J Operating Junction and -40 to 50 T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θja Junction-to-Ambient cg 58 R θja Junction-to-Ambient dg 2.5 R θja Junction-to-Ambient eg 20 C/W R θjc Junction-to-Case fg 3.0 R θj-pcb Junction-to-PCB Mounted.0 0 = 0.50 Thermal Response ( Z thja ) SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 3 τ 2 τ 3 Ci= τi/ri Ci= τi/ri E-006 E t, Rectangular Pulse uration (sec) R 4 R 4 τ 4 τ 4 R 5 R Ri ( C/W) τi (sec) τ 5 τ 5 τ A C τ C Notes:. uty Factor = t/t2 2. Peak Tj = Pdm x Zthja Ta Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Surface mounted on in. square Cu, steady state. Used double sided cooling, mounting pad. ƒ Mounted on minimum footprint full size board with metalized back and with small clip heatsink. T C measured with thermocouple incontact with top (rain) of part. R θ is measured at T J of approximately 90 C. Surface mounted on in. square Cu ƒ Mounted to a PCB with ƒ Mounted on minimum board (still air). small clip heatsink (still air) footprint full size board with metalized back and with small clip heatsink (still air) 3
4 C, Capacitance(pF) I, rain-to-source Current (Α) Typical R S(on) (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) IRF VGS TOP 5V V 8.0V 7.0V BOTTOM 6.0V 0 VGS TOP 5V V 8.0V 7.0V BOTTOM 6.0V 6.0V 6.0V 60µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics 60µs PULSE WITH Tj = 50 C 0. 0 V S, rain-to-source Voltage (V) Fig 5. Typical Output Characteristics 0 V S = V 60µs PULSE WITH 2.0 I = 5.7A = V T J = 50 C T J = 25 C T J = -40 C , Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd C iss = 7.0V = 8.0V = V = 5V T A = 25 C C oss 40 0 C rss Typical R S(on) (mω) V S, rain-to-source Voltage (V) I, rain Current (A) Fig 8. Typical Capacitance vs.rain-to-source Voltage Fig 9. Typical On-Resistance vs. rain Current 4
5 E AS, Single Pulse Avalanche Energy (mj) I, rain Current (A) (th) Gate threshold Voltage (V) I, rain-to-source Current (A) IRF6645 I S, Reverse rain Current (A) 0.0 T J = 50 C T J = 25 C T.0 J = -40 C.0 = 0V V S, Source-to-rain Voltage (V) Fig. Typical Source-rain iode Forward Voltage 00 0 T A = 25 C Tj = 50 C Single Pulse OPERATION IN THIS AREA LIMITE BY R S (on) 0µsec msec msec V S, rain-tosource Voltage (V) Fig. Maximum Safe Operating Area I =.0A I =.0mA I = 250µA I = 50µA T J, Ambient Temperature ( C) Fig 2. Maximum rain Current vs. Ambient Temperature I TOP.5A 2.4A BOTTOM 3.4A T J, Temperature ( C ) Fig 3. Typical Threshold Voltage vs. Junction Temperature Starting T J, Junction Temperature ( C) Fig 4. Maximum Avalanche Energy vs. rain Current 5
6 IRF6645 Current Regulator Same Type as.u.t. Vds Id 2V.2µF 50KΩ.3µF Vgs.U.T. V - S Vgs(th) 3mA I G I Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 5a. Gate Charge Test Circuit Fig 5b. Gate Charge Waveform V (BR)SS 5V tp V S L RIVER R G 20V tp.u.t I AS 0.0Ω - V A I AS Fig 6b. Unclamped Inductive Test Circuit Fig 6c. Unclamped Inductive Waveforms V S R V S 90%.U.T. R G - V % V Pulse Width µs t d(on) t r t d(off) t f uty Factor 0. % Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms 6
7 IRF U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-Applied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * = 5V for Logic Level evices Fig 8. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, SJ Outline (Small Size Can, J-esignation). Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G S S G = GATE = RAIN S = SOURCE 7
8 IRF6645 irectfet Outline imension, SJ Outline (Small Size Can, J-esignation). Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE A B C E F G H K L M N P IMENSIONS METRIC IMPERIAL MIN MAX MIN ÃMAX irectfet Part Marking 8
9 irectfet Tape & Reel imension (Showing component orientation). IRF6645 NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6645). For 00 parts on 7" reel, order IRF6645TR REEL IMENSIONS STANAR OPTION (QTY 4800) TR OPTION (QTY 00) METRIC IMPERIAL METRIC IMPERIAL COE MIN MAX MIN MAX MIN MAX MIN MAX A N.C N.C N.C 6.9 N.C B 20.2 N.C N.C 9.06 N.C 0.75 N.C C N.C N.C.5 N.C N.C E 0.0 N.C N.C N.C 2.3 N.C F N.C 8.4 N.C N.C 3.50 N.C 0.53 G N.C H N.C NOTE: CONTROLLING IMENSIONS IN MM MIN IMENSIONS METRIC MAX N.C.60 IMPERIAL MAX N.C ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.08/05 9
10 Note: For the most current drawings please refer to the IR website at:
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P 9633 HEXFET Power MOFET V 3 V R (on) max (@V G = V) 4.6 mω Q g (typical) 32 nc I (@T A = 25 C) A 5 6 7 8 G 4 3 2 G 3mm x 3mm PQFN Applications l ystem/load switch Features and Benefits Features Benefits
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P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationV DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC. Parameter Typ. Max. Units Junction-to-Drain Lead g 20 C/W Junction-to-Ambient fg 50
pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters Benefits l Very Low R S(on)
More information5.0V 5.0V. 20µs PULSE WIDTH Tj = 25 C. Tj = 150 C. V DS, Drain-to-Source Voltage (V) T J = 150 C 1.5. V GS, Gate-to-Source Voltage (V)
9MT050XF "FULL-BRIDGE" FREDFET MTP HEXFET Power MOSFET Features Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationV DSS R DS(on) max I D. 30V GS = 10V 13A. 100 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems 8 S 2 7 S
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
More informationV DSS R DS(on) max Qg. 380 P C = 25 C Maximum Power Dissipation 89 P C = 100 C Maximum Power Dissipation Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationIRFR3806PbF IRFU3806PbF
PD - 9733 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationIRLS3034PbF IRLSL3034PbF
PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l Lead-Free escription Fifth Generation HEXFETs
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRFS3004-7PPbF HEXFET Power MOSFET
PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationV DSS R DS(on) max Qg 30V GS = 10V 20nC
Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low R DS(ON) at 4.5V V GS l
More informationHEXFET Power MOSFET for DC-DC Converters. Absolute Maximum Ratings Parameter Symbol IRF7828PbF Units Drain-Source Voltage V DS
P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
More informationIRFR1018EPbF IRFU1018EPbF
PD - 9729A IRFR8EPbF IRFU8EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationIRL8113 IRL8113S IRL8113L
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET Power MOSFET R DS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l l
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationIRFS4127PbF IRFSL4127PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P - 94807 V SS = 55V R
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.8 C/W)
PD -97538A IRFH5025PbF HEXFET Power MOSFET V DS 250 V R DS(on) max (@V GS = V) 0 mω Q g (typical) 37 nc R G (typical).6 Ω I D (@T c(bottom) = 25 C) 25 A PQFN 5X6 mm Applications Secondary Side Synchronous
More information