MAXIMUM ALLOWABLE RATINGS
|
|
- Rhoda Green
- 6 years ago
- Views:
Transcription
1 PROTON-ELECTROTEX RUSSIA Phase Control Thyristor High power cycling capability Low on-state and switching losses Designed for traction and industrial applications Mean on-state current ITA Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Turn-off time tq DRM, RRM, oltage code Tj, C Type Т A , 200, 250, 320, 320, 400, 500 µs MAXIMUM ALLOWABLE RATINGS Symbols and parameters ON-STATE ITA ITRMS Mean on-state current RMS on-state current Units alues A A ITSM Surge on-state current Tc=85 ºC, Double side cooled 180 half-sine wave; 50 Hz Tj=Tj max Tj=25 C 180 half-sine wave; 50 Hz (tp=10 ms); single pulse; D=R=0 ; tgp=50 s; dig/dt 1 A/ s Tj=Tj max Tj=25 C 180 half-sine wave; 60 Hz (tp=8.3 ms); single pulse; D=R=0 ; tgp=50 s; dig/dt 1 A/ s Tj=Tj max Tj=25 C 180 half-sine wave; 50 Hz (tp=10 ms); single pulse; D=R=0 ; tgp=50 s; dig/dt 1 A/ s Tj=Tj max Tj=25 C 180 half-sine wave; 60 Hz (tp=8.3 ms); single pulse; D=R=0 ; tgp=50 s; dig/dt 1 A/ s ka I2t Test conditions A2s.103 Safety factor BLOCKING DRM, RRM Repetitive peak off-state and Repetitive peak reverse voltages DSM, RSM Non-repetitive peak off-state and Non-repetitive peak reverse voltages D, R Direct off-state and Direct reverse voltages 0.75.DRM 0.75.RRM Tj min< Tj <Tj max; 180 half-sine wave; 50 Hz; Gate open Tj min< Tj <Tj max; 180 half-sine wave; 50 Hz;single pulse; Gate open Tj=Tj max; Gate open page 1 of 12
2 TRIGGERING IFGM Peak forward gate current RGM Peak reverse gate voltage PG Gate power dissipation SWITCHING A W Critical rate of rise of on-state current non-repetitive (f=1 Hz) (dit/dt)crit THERMAL Tstg Storage temperature Tj Operating junction temperature MECHANICAL F Mounting force a A/ s 1000 C C kn m/s2 Acceleration Tj=Tj max Tj=Tj max for DC gate current Tj=Tj max; D=0.67.DRM; ITM=2 ITA; tgp=50 s; dig/dt 2 A/ s Device unclamped Device clamped CHARACTERISTICS Symbols and parameters Units alues Conditions ON-STATE TM Peak on-state voltage, max T(TO) rt On-state threshold voltage, max On-state slope resistance, max m IL Latching current, max ma 1500 IH Holding current, max ma 300 ma 150 / s 200, 320, 500, Tj= Tj min Tj=25 C Tj= Tj max ma Tj= Tj min Tj= 25 C Tj= Tj max Tj=Tj max; D=0.67.DRM; Direct gate current Tj= Tj max; ITM=2000 A; Tj=25 C; ITM=3140 A Tj=Tj max; 0.5 ITA < IT < 1.5 ITA Tj=25 C; D=12 ; tgp=50 s; dig/dt 1 A/ s Tj=25 C; D=12 ; Gate open BLOCKING Repetitive peak off-state and Repetitive peak reverse currents, max Critical rate of rise of (dvd/dt)crit off-state voltage1), min TRIGGERING IDRM, IRRM GT Gate trigger direct voltage, max IGT Gate trigger direct current, max GD Gate non-trigger direct voltage, min 0.25 IGD Gate non-trigger direct current, min ma Tj=Tj max; D=DRM; R=RRM Tj=Tj max; D=0.67.DRM; Gate open D=12 ; ID=3 A; Direct gate current SWITCHING tgd Delay time s tq Turn-off time2), max s Qrr trr IrrM Total recovered charge, max Reverse recovery time, typ Peak reverse recovery current, max C s A , 200, 250, 320, 400, Tj=25 C; D=0.4.DRM; ITM=ITA; tgp=50 s; dig/dt 2 A/ s dvd/dt=50 / s; Tj=Tj max; ITM= ITA; dir/dt=-10 A/ s; R=100; D=0.67.DRM Tj=Tj max; ITM= ITA; dir/dt=-10 A/ s; R=100 ; page 2 of 12
3 THERMAL Rthjc Rthjc-A Rthjc-K Thermal resistance, junction to case, max Thermal resistance, case to heatsink, max MECHANICAL w Weight, typ Rthck Ds Surface creepage distance Da Air strike distance PART NUMBERING GUIDE T A2 T Phase Control Thyristor Design version Mean on-state current, A oltage code Critical rate of rise of off-state voltage, / s Turn-off time (dvd/dt=50 / s) Ambient conditions: N normal; T tropical C/W Direct current C/W Direct current g mm (inch) mm (inch) 510 Double side cooled Anode side cooled Cathode side cooled (1.196) (0.710) NOTES N 7 1) Critical rate of rise of off-state voltage Symbol of Group (dvd/dt)crit, / s 2) P2 200 K2 320 E2 500 A Turn-off time (dvd/dt=50 / s) Symbol of Group tq, s T2 160 P2 200 M2 250 K2 320 H2 400 E2 500 page 3 of 12
4 OERALL DIMENSIONS Package type: T.D5 All dimensions in millimeters (inches) The information contained herein is confidential and protected by Copyright. In the interest of product improvement, Proton-Electrotex reserves the right to change data sheet without notice. page 4 of 12
5 Fig 1 On-state characteristics of Limit device Analytical function for On-state characteristic: T A B it C ln(it 1) D it Coefficients for max curves Tj = 25oC Tj = Tj max A B C D On-state characteristic model (see Fig. 1) page 5 of 12
6 Fig 2 Transient thermal impedance Analytical function for Transient thermal impedance junction to case Z thjc for DC: Z thjc t i Ri 1 e i 1 n Where i = 1 to n, n is the number of terms in the series. t = Duration of heating pulse in seconds. Zthjc = Thermal resistance at time t. Ri = Amplitude of pth term. ti = Time constatnt of rth term. DC Double side cooled i Ri, K/W i, s DC Anode side cooled i Ri, K/W i, s DC Cathode side cooled i Ri, K/W i, s Transient thermal impedance junction to case Zthjc model (see Fig. 2) page 6 of 12
7 Fig 3 Gate characteristics Trigger limits Fig 4 - Gate characteristics Power curves page 7 of 12
8 Fig 5 Total recovered charge, Qrr-i (integral) Fig 6 - Recovered charge, Qrr (linear) page 8 of 12
9 Fig 7 Peak reverse recovery current, Irm Fig 8 Maximum recovery time, trr (linear) page 9 of 12
10 Fig 9 On-state power loss (sinusoidal current waveforms) Fig 10 On-state power loss (rectangular current waveforms) page 10 of 12
11 Fig 11 Maximum case temperature DSC (sinusoidal current waveforms) Fig 12 Maximum case temperature DSC (rectangular current waveforms) page 11 of 12
12 Fig 13 Maximum surge and I2t ratings Fig 14 Maximum surge ratings page 12 of 12
TFI V DRM V DSM V RRM V RSM
FAST SWITCHING THYRISTOR V DRM /V RRM = 2200 2400 V I T(AV) = 2500 A (T C = 80 C) I T(AV) = 3400 A (T C = 55 C) I TSM = 40 ka (T Vj = 125 C) Interdigitated amplifying gate Low on-state switching losses
More informationTXN/TYN > TXN/TYN 1012
TXN/TYN 0512 ---> TXN/TYN 1012 SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT. HIGH STABILITY AND RELIABILITY TXN Serie : INSULATED VOLTAGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION
More information50RIA SERIES 50 A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2401 rev. A 07/00. Case Style TO-208AC (TO-65)
50RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features High current rating Excellent dynamic characteristics dv/dt = 0V/µs option Superior surge capabilities Standard package Metric threads version
More informationDistributed Gate Thyristor Types R0472YC12x to R0472YC16x
Date:- 23 Oct 2014 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R0472YC12x to R0472YC16x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 06D2800 Unit. f = 50 Hz, tp = 10 ms, Tvj = C, Note 1 V DRM, V RRM.
VDRM = 2800 V Phase Control hyristor I(AV)M = 620 A I(RMS) = 970 A ISM = 8.8 10 3 A V0 = 0.92 V r = 0.78 m 5SP 06D2800 Doc. No. 5SYA1020-05 Mar. 14 Patented free-floating silicon technology Low on-state
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 28M4200 Unit. f = 50 Hz, tp = 10 ms, Tvj = C, Note 1 V DRM, V RRM.
VDRM = 4200 V Phase Control hyristor I(AV)M = 2710 A I(RMS) = 4260 A ISM = 54.0 10 3 A V0 = 0.97 V r = 0.158 m 5SP 28M4200 Doc. No. 5SYA1080-01 Jun. 16 Patented free-floating silicon technology Low on-state
More informationST300S SERIES 300A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25158 rev. B 01/94. case style TO-209AE (TO-118)
ST300S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4-16UNF2A
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
More informationDistributed Gate Thyristor Types R3115TJ24# and R3115TJ28#
Date:- 4 th August, 2017 Data Sheet Issue:- A2 Distributed Gate Thyristor Types R3115TJ24# and R3115TJ28# Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage,
More informationBTA40 and BTA/BTB41 Series
STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
More informationABB 5STP33L2800 Control Thyristor datasheet
ABB 5SP33L2800 Control hyristor datasheet http://www.manuallib.com/abb/5stp33l2800-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 45Y8500 Unit Max. surge peak forward and reverse blocking voltage
VDRM = 8500 V Phase Control hyristor I(AV)M = 4240 A I(RMS) = 6660 A ISM = 90 10 3 A V0 = 1.10 V r = 0.16 m 5SP 45Y8500 Patented free-floating silicon technology Low on-state and switching losses Designed
More informationSymbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125
(N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The (N) Family of Silicon Controlled Rectifiers
More informationST280C..C SERIES 500A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25159 rev. C 02/00. case style TO-200AB (A-PUK)
Bulletin I25159 rev. C 02/00 ST280C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK)
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 26N6500 Unit Max. surge peak forward and reverse blocking voltage
VDRM = 6500 V Phase Control hyristor I(AV)M = 2810 A I(RMS) = 4410 A ISM = 65 10 3 A V0 = 1.12 V r = 0.29 m 5SP 26N6500 Doc. No. 5SYA1001-07 Mar. 14 Patented free-floating silicon technology Low on-state
More informationSymbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125
BTW 68 (N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY BTW 68 Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 68 (N) Family of Silicon
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 42U6500 Unit Max. surge peak forward and reverse blocking voltage
VDRM = 6500 V Phase Control hyristor I(AV)M = 4250 A I(RMS) = 6680 A ISM = 86 10 3 A V0 = 1.24 V r = 0.162 m 5SP 42U6500 Doc. No. 5SYA1043-07 Mar. 14 Patented free-floating silicon technology Low on-state
More informationTM8050H-8W. 80 A high temperature Thyristor (SCR) Applications
80 A high temperature Thyristor (SCR) Datasheet - production data G TAB = A A K Applications Solid state switch Battery charging system Variable speed motor drive Industrial welding systems AC-DC rectifier
More informationST180S SERIES 200A. Stud Version PHASE CONTROL THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics
ST180S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard
More informationPhase Control Thyristors (Hockey PUK Version), 1745 A
Phase Control Thyristors (Hockey PUK Version), 1745 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Designed and
More informationBTA08 TW/SW BTB08 TW/SW
BTA08 TW/SW BTB08 TW/SW LOGIC LEVEL TRIACS FEATURES LOW I GT = 5mA max LOW I H = 15mA max. HIGH EFFICIENCY SWITCHING BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION The
More informationPhase Control SCR, 70 A
Phase Control SCR, 70 A 70TPS..PbF High oltage Series ishay High Power Products 2 (A) DESCRIPTION/FEATURES The 70TPS..PbF High oltage Series of silicon controlled rectifiers are specifically designed for
More informationPhase Control SCR, 70 A
Phase Control SCR, 70 A 70TPS..PbF High oltage Series ishay High Power Products 2 (A) DESCRIPTION/FEATURES The 70TPS..PbF High oltage Series of silicon controlled rectifiers are specifically designed for
More informationIT (AV) A VDRM...400V/600V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=47 C A ITSM
OUTLINE DRWING φ. MX. Dimensions in mm CTHODE NODE GTE OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM.../ IGT...µ JEDEC : TO-9 PPLICTION Leakage protector, timer, gas ignitor
More informationnot Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE
TMDZ/CZ/PZ-M,-H TMDZ/CZ/PZ-M,-H (DZ Type) PPLICTION DC motor control, NC equipment, C motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRWING & CIRCUIT DIGRM
More informationAAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 105 A
AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 05 A FEATURES High voltage Industrial standard package UL approved file E78996 Low thermal resistance Designed and qualified for industrial level
More informationMD#630-30N2 & MD#630-36N2
Date: 12 th October 2015 Data Sheet Issue: 1 Dual Diode Modules MD#630-30N2 & MD#630-36N2 Absolute Maximum Ratings VRRM [V] MDD MDA MDK 1200 630-30N2 630-30N2 630-30N2 1800 630-36N2 630-36N2 630-36N2 VOLTAGE
More informationPhase Control Thyristors (Hockey-PUK Version), 2310 A
Phase Control Thyristors (Hockey-PUK Version), 2310 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Material categorization:
More informationTK18. Phase Control Thyristor Advance Information Replaces January 2000 version, DS DS July 2001 TK18
Phase Control Thyristor Advance Information Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001 FEATURES High Surge Capability APPLICATIONS High Power Drives High Voltage Power Supplies DC
More informationPhase Control Thyristors (Hockey PUK Version), 1350 A
Phase Control Thyristors (Hockey PUK Version), 1350 A FEATURES Center amplifying gate Metal case with ceramic insulator International standard case B-PUK (TO-200AC) Designed and qualified for industrial
More informationIRKU/V41, 56 SERIES 45 A 60 A. ADD-A-pak TM GEN V Power Modules THYRISTOR/ THYRISTOR. Features. Benefits. Mechanical Description
Bulletin I2734 rev. E /2 IRKU/V4, 56 SERIES THYRISTOR/ THYRISTOR ADD-A-pak TM GEN V Power Modules Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
More informationWESTCODE. An IXYS Company. Date:- 24 May, Data Sheet Issue:- 2. Provisional Data Extra Fast Recovery Diode Type F1600NC120
WESTCODE An IXYS Company Absolute Maximum Ratings Provisional Data Extra ast Recovery Diode Type OLTAGE RATINGS Development Type No. x021nc120 Date:- 24 May, 2002 Data Sheet Issue:- 2 MAXIMUM LIMITS RRM
More informationSymbol Parameter Value Unit BTW 66 BTW 67 BTW 66 BTW 67 BTW 66 BTW 67 BTW 66 BTW 67
SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY ISOLTED PCKGE : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The and Family Silicon Controlled Rectifiers
More informationIT (AV) A VDRM V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=30 C A ITSM
CRM-8 GLSS PSSITION TYPE CRM-8 OUTLINE DRWING φ. MX. Dimensions in mm T TERMINL T TERMINL GTE TERMINL OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM... IGT...µ JEDEC : TO-9 PPLICTION
More informationTN5015H-6G. High temperature 50 A SCRs. Description. Features. Applications
TN515H-6G High temperature 5 SCRs Datasheet - production data Features G K K G D²PK High junction temperature: Tj = 15 C High noise immunity dv/dt = 5 V/µs up to 15 C Gate triggering current IGT = 15 m
More informationMT..KB SERIES 50 A 90 A 100 A. Power Modules THREE PHASE AC SWITCH. Features. Description. Major Ratings and Characteristics. Bulletin I /97
MT..KB SERIES THREE PHASE AC SWITCH Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case
More informationPower Phase Modules Control - Thyristor/Thyristor. 50 Hz 4570 A. 60 Hz 4980 A
FEATURES High surge capability Qualified for industrial level Thick copper baseplate Easy mounting on heatsink TYPICAL APPLICATIONS Power supplies Machine tools control High power drives Welders Medium
More information1800PT Series. Phase Control Thyristors (Hockey PUK Version), 1800A FEATURES TYPICAL APPLICATIONS. RoHS. Nell High Power Products.
Phase Control Thyristors (Hockey PUK ersion), 18 18PT Series FETURES Center amplifying gate Metal case with ceramic insulator lnternational standard case -24 (K-PUK) Nell s D-type Capsule Compliant to
More informationMedium Power Phase Control Thyristors (Stud Version), 50 A
Medium Power Phase Control Thyristors (Stud Version), 50 A VS- TO-208AC (TO-65) PRODUCT SUMMARY Package TO-208AC (TO-65) Diode variation Single SCR I T(AV) 50 A V DRM /V RRM V to 1200 V V TM 1.60 V I GT
More informationDistributed Gate Thyristor Types R0633YC10x to R0633YC12x
Date:- 14 Jul, 2015 Data Sheet Issue:- 4 Distributed Gate Thyristor Types R0633YC10x to Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1) 1200
More information. LOW I H = 15mA max BTA Family : INSULATING VOLTAGE = 2500V (RMS) (UL RECOGNIZED : E81734)
BTA06 T/D/S/A BTB06 T/D/S/A SENSITIVE GATE TRIACS FEATURES VERY LOW I GT = 10mA max. LOW I H = 15mA max BTA Family : INSULATING VOLTAGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB06
More informationDistributed Gate Thyristor Type R1280NC21x to R1280NC25x
Date:- 01 August 2012 Data Sheet Issue:- 5 Distributed Gate Thyristor Type R1280NC21x to R1280NC25x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage,
More informationPINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT8- R 5R 6R switching
More informationIRK.105 SERIES 105 A. THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR. ADD-A-pak TM GEN V Power Modules. Features. Benefits. Mechanical Description
IRK.15 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR ADD-A-pak TM GEN V Power Modules Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate
More informationThyristor/Thyristor, 150 A (INT-A-PAK Power Module)
S-/4PbF Thyristor/Thyristor, 5 A (INT-A-PAK Power Module) INT-A-PAK PRIMARY CHARACTERISTICS I T(A) 5 A Type Modules - thyristor, standard Package INT-A-PAK FEATURES Electrically isolated by DBC ceramic
More informationTN1605H-6G. High temperature 16 A SCRs. Description. Features. Applications
High temperature 16 A SCRs Datasheet - production data G A A K Description Designed with high immunity switching to external surges, this device offers robust switching up to its 150 C maximum Tj. The
More informationPhase Control Thyristors (Stud Version), 330 A
Phase Control Thyristors (Stud Version), 330 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS I T(AV) 330 A 400 V, 800 V, 1200 V, 1400 V, V DRM /V RRM 1600 V, 2000 V V TM 1.52 V I GT 200 ma T J -40 C to +125
More informationAPPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers. 2 φ5.
TMR-M,-H TMR-M,-H PPLICTION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRWING & CIRCUIT DIGRM 1 4.6 K1 K
More informationDCR780G42. Phase Control Thyristor Preliminary Information KEY PARAMETERS FEATURES 4200V 780A 10500A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION
Phase Control Thyristor Preliminary Information DS5829-1.2 August 27 (LN25545) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability V DRM I T(AV) I TSM dv/dt* di/dt 42V 78A 15A 15V/µs 4A/us
More informationPINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g
BT9 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT9
More informationThyristor High Voltage, Phase Control SCR, 40 A
S-40TPS2LHM3, S-40TPS2ALHM3 Thyristor High oltage, Phase Control SCR, 40 A FEATURES 2 (A) Low I GT parts available AEC-Q0 qualified meets JESD 20 class A whisker test 2 3 TO-247AD 3L (K) (G) 3 Flexible
More informationTwo Separated Thyristor Module, 100A ( Low Profile Package ) 14, 15 I T(AV) CHARACTERISTICS to to 150
NKTA Series Two Separated Thyristor Module, A ( Low Profile Package ) FEATURES High voltage RMS isolating voltage High surge capability Planar SCR chips Heat transfer and isolation through direct copper
More informationDistributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21)
Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive
More informationDistributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21)
Date:- 4 Mar, 2003 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive
More informationVS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Thyristor High Voltage, Phase Control SCR, 70 A
Thyristor High Voltage, Phase Control SCR, 70 A 2 (A) FEATURES High surge capability High voltage input rectification 2 Designed and qualified according to JEDEC -JESD47 3 Super TO-247 (K) (G) 3 Material
More informationSoft Recovery Diode Type M0433WC120 to M0433WC200
Date:- 6 Nov, 2014 Data Sheet Issue:- 2 Soft Recovery Diode Type M0433WC120 to M0433WC200 Absolute Maximum Ratings OLTAGE RATINGS MAXIMUM LIMITS RRM Repetitive peak reverse voltage, (note 1) 1200-2000
More informationPhase Control Thyristors (Stud Version), 300 A
Phase Control Thyristors (Stud Version), 300 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS I T(AV) 300 A 400 V, 800 V, 1200 V, 1600 V, V DRM /V RRM 1800 V, 2000 V V TM 1.28 V I GT 200 ma T J -40 C to +125
More informationVS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series
AAP Gen 7 (TO-4AA) Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A FEATURES High voltage Industrial standard package Low thermal resistance UL approved file E78996 Designed and qualified for
More informationTS420. Sensitive gate 4 A SCRs
Sensitive gate 4 A SCRs Datasheet - production data Features On-state RMS current: 4 A Repetitive peak off-state voltage (VDRM, VRRM) 600 V Triggering gate current, IGT 0.2 ma Description Thanks to highly
More informationInverter Grade Thyristors (Stud Version), 300 A
Inverter Grade Thyristors (Stud Version), 300 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS I T(AV) 300 A V DRM /V RRM V, 800 V, 1 V V TM 2.16 V I TSM at 3000 A I TSM at 60 Hz 3150 A I GT ma T J -40 C to
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristors SYMBOL PARAMETER MAX. MAX. MAX. UNIT in a plastic envelope, intended for use in general purpose switching and BT58-5R 6R 8R
More informationMedium Power Phase Control Thyristors (Stud Version), 16 A
Medium Power Phase Control Thyristors (Stud Version), 16 A VS- PRODUCT SUMMARY TO-208AA (TO-48) Package TO-208AA (TO-48) Diode variation Single SCR I T(AV) 16 A 0 V, 200 V, 400 V, 600 V, 800 V, V DRM /V
More informationPINNING - SOT186A PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a full pack, SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in applications requiring high BT5X- 5 65 8 bidirectional
More information85HF(R) SERIES 85 A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics
85HF(R) SERIES STANDARD RECOVERY DIODES Stud Version Features High surge current capability Stud cathode and stud anode version Leaded version available 85 A Types up to 1600V V RRM Typical Applications
More informationSymbol Parameter Value Unit. BTA Tc = 80 C 16 A. BTB Tc = 90 C. Repetitive F = 50 Hz. Non Repetitive
BTA16 B BTB16 B STANDARD TRIACS FEATURES HIGH SURGE CURRENT CAPABILITY. COMMUTATION : (dv/dt)c > 10V/µs BTA Family : INSULATING VOLTAGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB16
More informationMedium Voltage Thyristor Types K2359TD600 to K2359TD650 Old Type No.: P1063DH60-65
WESTCODE An IXYS Company Date:- 2 Aug, 22 Data Sheet Issue:- 1 Medium Voltage Thyristor Types K2359TD6 to K2359TD65 Old Type No.: P163DH6-65 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 17H5200 Unit Max. surge peak forward and reverse blocking voltage
V DRM = 5200 V Phase Control hyristor I (AV)M = 1975 A I (RMS) = 3100 A I SM = 34 10 3 A V 0 = 1.02 V r = 0.32 mw 5SP 17H5200 Doc. No. 5SYA1049-06 Nov. 13 Patented free-floating silicon technology Low
More informationWESTCODE. Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14)
An IXYS Company Date:- 14 Oct, 2004 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS
More informationMedium Power Phase Control Thyristors (Stud Version), 50 A
Medium Power Phase Control Thyristors (Stud Version), 50 A VS- TO-208AC (TO-65) PRODUCT SUMMARY Package TO-208AC (TO-65) Diode variation Single SCR I T(AV) 50 A V DRM /V RRM V to 1200 V V TM 1.60 V I GT
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5STP 07D1800 Unit Max repetitive peak forward and reverse blocking voltage
V DRM = 1800 V I (AV)M = 730 A I (RMS) = 1150 A I SM = 9 10 3 A V 0 = 0.8 V r = 0.54 mw Phase Control hyristor 5SP 07D1800 Doc. No. 5SYA1027-06 May 07 Patented free-floating silicon technology Low on-state
More informationCR02AM-8. Thyristor. Low Power Use. Features. Outline. Applications. Maximum Ratings. REJ03G Rev.1.00 Mar
Thyristor Low Power Use REJG4- Rev.. Mar.8. Features I T (AV) :. A V DRM : 4 V I GT : µa Planar Passivation Type Completed Pb free product Outline RENESAS Package code: PRSSDE-A (Package name: TO-9()).
More information301U(R) SERIES 300A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics
301U(R) SERIES STANDARD RECOVERY DIODES Stud Version Features Wide current range High voltage ratings up to 2500V High surge current capabilities Stud cathode and stud anode version High resistance to
More informationSilicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 5 Hz, tp = 10 ms, Tvj = C, Note 1. Note 1
VRSM = 6000 V Rectifier Diode IF(AV)M = 4210 A IF(RMS) = 6610 A IFSM = 71.2 10 3 A VF0 = 0.80 V rf = 0.134 m 5SDD 50N6000 Doc. No. 5SYA1188-01 Jun. 17 Patented free-floating silicon technology Low on-state
More informationThyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A
Thyristor/Thyristor (MAGN-A-PAK Power Modules), 32 A MAGN-A-PAK PRIMARY CHARACTERISTICS I T(A) 32 A Type Modules - thyristor, standard Package MAGN-A-PAK FEATURES High voltage Electrically isolated base
More informationPhase Control Thyristors (Stud Version), 110 A
VS-RKI...PbF, VS-RKI...PbF Series Phase Control Thyristors (Stud Version), A TO-94 (TO-29AC) PRIMARY CHARACTERISTICS I T(AV) A V DRM /V RRM 4 V, 8 V, 2 V V TM.57 V I GT 8 ma T J -4 C to +4 C Package TO-94
More informationBTA40 and BTA/BTB41 Series
STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
More informationThyristor High Voltage, Phase Control SCR, 50 A
S-TPS2LHM3 ishay Semiconductors Thyristor High oltage, Phase Control SCR, A 2 (A) FEATURES AEC-Q qualified, meets JESD 20 class A whisker test Flexible solution for reliable AC power rectification 2 3
More informationDCR860D18. Phase Control Thyristor KEY PARAMETERS FEATURES 1800 V 860 A A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION
Phase Control Thyristor DS626-1 April 211 (LN28237) FEATURES Double Side Cooling High Surge Capability APPLICATIONS KEY PARAMETERS V DRM I T(AV) I TSM dv/dt* di/dt 18 V 86 A 115 A 1 V/µs 2 A/µs * Higher
More informationSurface Mountable Phase Control SCR, 16 A
D 2 PAK PRODUCT SUMMARY V T at 16 A I TSM V RRM Anode 2 1 3 Cathode Gate < 1.25 V 300 A 800 V to 1600 V FEATURES Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Compliant to RoHS directive 2002/95/EC
More informationBTA40 and BTA/BTB41 Series
BTA4 and BTA/BTB41 Series STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41
More informationDCR7610H28. Phase Control Thyristor KEY PARAMETERS FEATURES 2800 V 7610 A A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION
Phase Control Thyristor DS42-1 April 211 (LN28253) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability V DRM I T(AV) I TSM dv/dt* di/dt 28 V 761 A 15 A 1 V/µs 2 A/µs APPLICATIONS High Power
More informationInverter Grade Thyristors (Stud Version), 85 A
Inverter Grade Thyristors (Stud Version), 85 A TO-94 (TO-209AC) PRIMARY CHARACTERISTICS Package TO-94 (TO-209AC) Circuit configuration Single SCR I T(AV) 85 A V DRM /V RRM 400 V, 0 V, 0 V, 0 V V TM 2.15
More informationTN3050H-12GY-TR. 30 A V automotive grade SCR Thyristor. Description. Features. Applications
30 A - 1200 V automotive grade SCR Thyristor Datasheet - production data Features AEC-Q101 qualified High junction temperature: Tj = 150 C AC off state voltage: +/- 1200 V Nominal on-state current: 30
More informationABB 5STP16F2800 Control Thyristor datasheet
ABB 5SP16F2800 Control hyristor datasheet http://www.manuallib.com/abb/5stp16f2800-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
More informationIR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK V T I TSM V RRM. 800 to 1600V < 16A = 300A. Bulletin I2135 rev.
IR Series 25TTS..FP PHASE CONTROL SCR TO-220 FULLPAK Description/Features The 25TTS..FP IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control
More informationS1VM02600A TO-92 (TO-226AA) SCRs 1.5 AMPERES RMS 600 VOLTS. Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES
LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 6 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic
More informationBTA16 BW/CW BTB16 BW/CW
BTA16 BW/CW BTB16 BW/CW SNUBBERLESS TRIACS. FEATURES HIGH COMMUTATION : (di/dt)c > 14A/ms without snubber HIGH SURGE CURRENT : I TSM = 160A. V DRM UP TO 800V BTA Family : INSULATING VOLTAGE = 2500V (RMS)
More informationBTA16-600BW3G, BTA16-800BW3G,
BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
More informationPhase Control Thyristor Types N0180SH120 to N0180SH160
Date:- 03 August 2012 Data Sheet Issue:- K1 Phase Control Thyristor Types N0180SH120 to N0180SH160 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage,
More informationADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
ADD-A-PAK Generation II Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A/6 A FEATURES High voltage Industrial standard package Low thermal resistance UL approved file E78996 Designed and qualified
More informationThyristor High Voltage, Phase Control SCR, 50 A
S-50TPS2L-M3 ishay Semiconductors Thyristor High oltage, Phase Control SCR, 50 A 2 3 TO-247AD 3L PRIMARY CHARACTERISTICS 2 (A) (K) (G) 3 I T(A) 50 A DRM / RRM 200 TM (typ.). I GT (typ.) 40 ma T J -40 C
More informationTHYRISTORS 5P4M,5P6M DATA SHEET. 5 A (8 Ar.m.s.) THYRISTOR. PACKAGE DRAWING (Unit: mm) FEATURES APPLICATIONS <R>
DATA SHEET THYRISTORS 5P4M,5P6M 5 A (8 Ar.m.s.) THYRISTOR The 5P4M and 5P6M are a P gate all diffused mold type Thyristor granted 5 A On-state Average Current (TC = 103 C). PACKAGE DRAWING (Unit: mm) FEATURES
More informationPhase Control Thyristors (Stud Version), 110 A
Phase Control Thyristors (Stud Version), 110 A TO-209AC (TO-94) PRODUCT SUMMARY I T(AV) 110 A V DRM /V RRM 400 V, 1600 V V TM 1.52 V I GT 150 ma T J -40 C to 140 C Package TO-209AC (TO-94) Diode variation
More informationABB 5STP20N8500 Control Thyristor datasheet
ABB 5SP20N8500 Control hyristor datasheet http://www.manuallib.com/abb/5stp20n8500-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
More informationBTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
More informationADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 27 A
FEATURES High voltage Industrial standard package UL approved file E78996 Low thermal resistance Compliant to RoHS directive /95/EC Designed and qualified for industrial level PRODUCT SUMMARY I T(A) or
More informationMCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
More informationValue Unit I T(RMS) RMS on-state current A A Tj = 25 C I FSM current (Tj initial = 25 C)
MAIN FEATURES: DIODE / SCR MODULE Symbol Value Unit I T(RMS) 50-70-85 A V DRM /V RRM 800 and 1200 V I GT 50 and 100 ma DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge
More information