SMPS MOSFET. V DSS Rds(on) max I D
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- Calvin Henry
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1 Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power MOSFET V DSS Rds(on) max I D 600V 0.75Ω 9.2A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current Absolute Maximum Ratings G D S TO262 Parameter Max. Units I T C = 25 C Continuous Drain Current, V 0V 9.2 I T C = 00 C Continuous Drain Current, V 0V 5.8 A I DM Pulsed Drain Current 37 P C = 25 C Power Dissipation 70 W Linear Derating Factor.3 W/ C V GS GatetoSource Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 50 T STG Storage Temperature Range Soldering Temperature, for 0 seconds 300 (.6mm from case ) C Applicable Off Line SMPS Topologies: l Active Clamped Forward l Main Switch Notes through are on page 8 2/23/98
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Voltage 600 V V GS = 0V, I D = 250µA R DS(on) Static DraintoSource OnResistance 0.75 Ω V GS = 0V, I D = 5.5A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA I DSS DraintoSource Leakage Current 25 V µa DS = 600V, V GS = 0V 250 V DS = 480V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 00 V GS = 30V na GatetoSource Reverse Leakage 00 V GS = 30V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 5.5 S V DS = 25V, I D = 3.A Q g Total Gate Charge 49 I D = 9.2A Q gs GatetoSource Charge 3 nc V DS = 400V Q gd GatetoDrain ("Miller") Charge 20 V GS = 0V, See Fig. 6 and 3 t d(on) TurnOn Delay Time 3 V DD = 300V t r Rise Time 25 ns I D = 9.2A t d(off) TurnOff Delay Time 30 R G = 9.Ω t f Fall Time 22 R D = 35.5Ω,See Fig. 0 C iss Input Capacitance 400 V GS = 0V C oss Output Capacitance 80 V DS = 25V C rss Reverse Transfer Capacitance 7. pf ƒ =.0MHz, See Fig. 5 C oss Output Capacitance 957 V GS = 0V, V DS =.0V, ƒ =.0MHz C oss Output Capacitance 49 V GS = 0V, V DS = 480V, ƒ =.0MHz C oss eff. Effective Output Capacitance 96 V GS = 0V, V DS = 0V to 480V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 290 mj I AR Avalanche Current 9.2 A E AR Repetitive Avalanche Energy 7 mj Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 0.75 R θja JunctiontoAmbient (PCB Mounted,steadystate) 40 C/W Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 9.2 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 37 (Body Diode) pn junction diode. S V SD Diode Forward Voltage.5 V T J = 25 C, I S = 9.2A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 9.2A Q rr Reverse RecoveryCharge µc di/dt = 00A/µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L D ) 2
3 I D, DraintoSource Current (A) 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 4.7V I D, DraintoSource Current (A) 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 4.7V 20µs PULSE WIDTH T J = 25 C V DS, DraintoSource Voltage (V) 20µs PULSE WIDTH T J = 50 C 0 00 V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, DraintoSource Current (A) 00 0 T J = 50 C T J = 25 C V DS= 50V 20µs PULSE WIDTH V GS, GatetoSource Voltage (V) R DS(on), DraintoSource On Resistance (Normalized) 3.0 I D = 9.2A V GS = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature 3
4 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd 0 A V DS, DraintoSource Voltage (V) V GS, GatetoSource Voltage (V) I = D 9.2A V DS = 480V 400V V DS = 300V V DS = 20V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. DraintoSource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V SD,SourcetoDrain Voltage (V) I D, Drain Current (A) us 00us ms 0ms TC = 25 C TJ = 50 C Single Pulse V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 0.0 V DS R D I D, Drain Current (A) Fig 0a. Switching Time Test Circuit V DS 90% R G V GS 0V Pulse Width µs Duty Factor 0. % D.U.T. V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = PDM 0.05 t 0.02 SINGLE PULSE t2 0.0 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 5
6 R G V DS 20V tp Fig 2a. Unclamped Inductive Test Circuit tp L D.U.T I AS 0.0Ω 5V DRIVER V (BR)DSS V DD A E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I D 4.A 5.8A 9.2A Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 0 V Q GS Q GD D.U.T. V DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReApplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For NChannel HEXFETS 7
8 Package Outline TO262 Outline Part Marking Information TO262 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 6.8mH R G = 25Ω, I AS = 9.2A. (See Figure 2) ƒ I SD 9.2A, di/dt 50A/µs, V DD V (BR)DSS, T J 50 C Pulse width 300µs; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITALY: Via Liguria 49, 007 Borgaro, Torino Tel: IR FAR EAST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3, Singapore Tel: IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 0673, Taiwan Tel: Data and specifications subject to change without notice. 2/98 8
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Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
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PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF360 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20Ω 25A The HEXFET technology
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRFU5305. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.065Ω I D = -31A. Description. Absolute Maximum Ratings. Thermal Resistance PD A
l Ultra Low OnResistance l Surface Mount (IRFR5305) l Straight Lead (IRFU5305) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from International
More informationFB180SA10. HEXFET Power MOSFET V DSS = 100V. R DS(on) = W I D = 180A
PD 965C FB80SA0 Fuy Isoated Package Easy to Use and Parae Very Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Drain to Case Capacitance Low Interna Inductance G D
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l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationIRL540NS/L. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 0.044Ω I D = 36A. Absolute Maximum Ratings. Thermal Resistance PD
l dvanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from
More informationW/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 57
PD 974 HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300. C (1.6mm from case )
SMPS MOSFET PD - 9444A IRFP22N60K HEXFET Power MOSFET Applications V l Hard Switching Primary or PFS Switch DSS R DS(on) typ. I D l Switch Mode Power Supply (SMPS) 600V 240mΩ 22A l Uninterruptible Power
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRLI620G PD HEXFET Power MOSFET V DSS = 200V. R DS(on) = 0.80Ω I D = 4.0A
HEXFET Power MOSFET PD - 9.235 IRLI620G Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive R DS(ON) Specified at V GS = 4V & 5V Fast Switching Ease
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
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SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationIRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features: 1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556
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PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationIRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features: 1 PD REPETITIVE AVALANCHE AND dv/dt RATED.
PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology
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Applications l High frequency DC-DC converters SMPS MOSFET PD - 94114 IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 42.6A Benefits l Low Gate-to-Drain Charge
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HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 32
PD 9747 IRFS457PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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