GaN/SiC Bare Die Power HEMT DC-15 GHz
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- Brenda Whitehead
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1 GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of 5mm (Four 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz. It can provide a typically saturated power of 43.3 dbm. This part is RoHS compliant. FEATURES High Frequency Operation up to 15GHz Gain=dB at 2GHz PAE=51% P 5dB =43.3 dbm APPLICATIONS Cellular Radio Base Stations WLAN, Repeaters C-Band VSAT Radar Test Instrumentation Military TYPICAL RF PERFORMANCE (CW) FREQUENCY 2 (GHz) (GHz) P 5dB (dbm) P 5dB 51% 41% Small Signal Gain (db) 11 Load Reflection Coeff (Per 1. *(V ds =28V, I ds = 7mA) **Bond wires are not included and the reference line is 75 microns from the edge of the bonding pads towards the device. ABSOLUTE MAXIMUM RATING Parameters Symbol Rating Drain-Source Voltage (V) V ds Gate-Source Voltage (V) V gs -6 Drain Current (ma) I ds 00 Continuous Dissipation At Room Temp. (W) P t 82.9 Operating Temp. ( o C) T A -55 to +85 Max. Channel Temp. ( o C) T ch +0 DC PARAMETERS Parameters Conditions MIN TYP MAX Saturation Current I dss (ma) V ds =V, V gs =0V Pinch-off Voltage V p (V) V ds =V, I ds =2.5% I dss Drain to Gate Breakdown Voltage BV gd (V) I dg = 1 ma/mm Thermal Resistance ( o C/W)
2 SMALL SIGNAL MEASUREMENTS * S-Parameters for. V ds =28V, V gs = -2.V, I ds = 7mA Freq(GHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) *Notes: 1) Bond wires are not included and the reference line is 75 microns from the edge of the bonding pads towards the device. 2) S2P file downloadable from the web :
3 Gmax (db) MAXIMUM AVAILABLE GAIN (Gmax) 28V/7 ma POWER DATA (CW) 1) Optimum P SAT tune (V ds =28V, I ds = 7mA) * Frequency SOURCE Γ (per 1. LOAD Γ (per 1. Gain (db) P 1dB (dbm) P 5dB (dbm) P 5dB 2 GHz % 4 GHz % 6 GHz % 8 GHz % GHz % *Notes: 1) Source tuning has effect on P 1dB & small signal gain, and the source points in this table is a compromise between high gain and high P 1dB at that frequency. 2) Bond wires are not included and the reference line is 75 microns from the edge of the bonding pads towards the device. 3) is 5mm device which consists of four 1.mm cells in parallel.
4 (dbm) PAE % Optimum P SAT tune (28V/ 7 ma) PAE ) Optimum PAE tune (V ds =28V, I ds = 7mA) * Frequency SOURCE Γ (per 1. LOAD Γ (per 1. Gain (db) P 1dB (dbm) P 5dB (dbm) P 5dB 2 GHz % 4 GHz % 6 GHz % 8 GHz % GHz % *Notes: 1) Source tuning has effect on P 1dB & small signal gain, and the source points in this table is a compromise between high gain and high P 1dB at that frequency. 2) Bond wires are not included and the reference line is 75 microns from the edge of the bonding pads towards the device. 3) is 5mm device which consists of four 1.mm cells in parallel.
5 (dbm) PAE % Optimum PAE tune (28V/ 7 ma) PAE CHIP OUTLINE GATES Notes: 1-5 mm GaN HEMT 2- Chip is 0 µm thick 3- Dimensions in microns 4- Use eutectic bonding Au85Sn15 at 290 C DRAINS
6 R2 R3 R3 P1dB & (dbm) Efficiency % Gain & Return losses (db) TEST CIRCUIT A) 2 GHz to 3 GHz 28V/7mA 2.5GHz Vds=28V Ids=0.75A P1dB EFF P1dB EFF PSAT 2.5GHz Vds=28V Ids=0.75A Small signal gain Input RL Output RL C5 C2 C2 C6 C3 R1 R5 R4 R4 Notes: 1- mils Rogers 43 Material (LoPro) 2- Ckt is for 5mm 2.5GHz 3- =0pF, C2=00pF, C3=2.2pF, C4=1uF, C5=47pF, C6=1pF R1=ohms, R2=470ohms, R3=22ohms, R4=3ohms, R5=0 ohm 4-,C2,C3,C5 & all Resistors are 03 size 5- C6 is 02 size.
7 (dbm) Efficiency % Gain & Return losses (db) B) 6.6 GHz to 7.8 GHz 28V/7mA 7GHz Vds=28V Ids=0.75A PAE Drain EFF 7GHz Vds=28V Ids=0.75A Small signal gain Input RL Output RL R1 C3 C3 R2 C2//C2 5mm mils 43B 7 GHz Notes: 1- mils Rogers 43 Material (LoPro) 2- Ckt is for 5mm 7GHz 3- =1pF, C2=pF, C3=00pF, C4=1uF R1=0ohm, R2=ohms 4- All Caps & Resistors are 03 size
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