functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
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1 H037N06L Feaures Low On-Resisance Fas Swiching 100% Avalanche Tesed Repeiive Avalanche Allowed up o Tjmax Lead-Free, RoHS omplian Descripion H037N06L designed by he rench processing echniques o achieve exremely low on-resisance. Addiional feaures of his design are a 175 juncion operaing emperaure, fas swiching speed and improved repeiive avalanche raing. These feaures combine o make his design an exremely efficien and reliable device for use in Power applicaions and a wide variey of oher supply applicaions. Absolue Maximum Raings Sresses beyond hose lised under Absolue Maximum Raings may cause permanen damage o he device. These are sress raings only;and funcional operaion of he device a hese or any oher condiion beyond hose indicaed in he specificaions is no implied. Exposure o absolue-maximum-raed condiions for exended periods may affec device reliabiliy. The hermal resisance and power dissipaion raings are measured under board mouned and sill air condiions. Ambien emperaure (TA) is 25, unless oherwise specified. Symbol Parameer Raing Uni ommon Raings (T=25 Unless Oherwise Noed) DS 60 R DS(on),yp@ 28 mω R DS(on),yp@GS= mω I D 30 A TO-252 GS Gae-Source olage ± Drain-Source Breakdown olage 60 (BR)DSS TJ Maximum Juncion Temperaure 175 TSTG Sorage Temperaure Range -55 o 175 IS Diode oninuous Forward urren T =25 30 A Mouned on Large Hea Sink IDM Pulse Drain urren Tesed 1 T = A I oninuous Drain curren@ T =25 30 A D PD Maximum Power Dissipaion T =25 35 W R J Thermal Resisance-Juncion o ase 3 /W R JA Thermal Resisance Juncion-Ambien 75 /W Drain-Source Avalanche Raings EAS Avalanche Energy, Single Pulsed 2 38 mj 1
2 H037N06L Symbol Parameer ondiion Min. Typ. Max. Uni Saic Elecrical TJ = 25 (unless oherwise saed) Drain-Source Breakdown olage GS=0 ID=250μA (BR)DSS I DSS Zero Gae olage Drain urren(tc=125 ) DS=60,GS= μa Zero Gae olage Drain urren(tc=25 ) DS=60,GS= μa I Gae-Body Leakage urren GS=±16,DS= ±10 μa GSS Gae Threshold olage DS=GS,ID=250μA GS(TH) R Drain-Source On-Sae Resisance3, ID=16A mω DS(ON) R Drain-Source On-Sae Resisance3 GS=5, ID=8A mω DS(ON) gfs Forward Transconducance DS= 25, ID=18A S Dynamic Elecrical TJ = 25 (unless oherwise saed) Inpu apaciance pf iss DS=30,GS=0, Oupu apaciance pf oss f=1mhz rss Reverse Transfer apaciance pf Toal Gae harge n g DS=30,ID=18A, Gae-Source harge n gs gd Gae-Drain harge Swiching haracerisics n Turn-on Delay Time ns d(on) DD=30, Turn-on Rise Time ID=1A, ns r Turn-Off Delay Time RG=6.8Ω, d(off) ns Turn-Off Fall Time ns f Source- Drain Diode haracerisics@ TJ = 25 (unless oherwise saed) I Source-drain curren(body Diode) Tc= A SD Forward on volage ISD=20A,GS= SD Reverse Recovery Time Tj=25,Isd=20A, ns rr GS=0 Reverse Recovery harge 85 n di/d=100a/μs rr NOTE: 1 Repeiive raing; pulse widh limied by max. juncion emperaure. 2 Limied by TJmax, saring TJ = 25, L = 0.3mH,RG = 25Ω, IAS = 16A, GS =10. Par no recommended for use above his value 3 Pulse widh 300μs; duy cycle 2%. 2
3 H037N06L Typical haracerisics DS, Drain -Source olage () Fig1. Typical Oupu haracerisics Tc - ase Temperaure ( ) Fig2. Maximum Drain urren s.ase Temperaure ID, Drain-Source urren (A) ID, Drain-Source urren (A) Normalized On Resisance ID, Drain-Source urren (A) ID=16A GS, Gae -Source olage () Fig3. Typical Transfer haracerisics Tj - Juncion Temperaure ( ) Fig4. Normalized On-Resisance s. Temperaure Gfs, Forward Transconducance (S) Tj=25 ID - Drain urren (A) ISD, Source-Drain olage (A) Fig5.Typical Forward Transconducance s. Drain urren DS, Drain -Source olage () Fig6. Maximum Safe Operaing Area 3
4 H037N06L ISD, Reverse Drain urren (A) GS, Gae-Source olage () SD, Source-Drain olage () Fig7. Typical Source-Drain Diode Forward olage g -Toal Gae harge (n) Fig8. Typical Gae harge s.gae-source olage GS(TH), Gae -Source olage (), apaciance (pf) Tj - Juncion Temperaure ( ) Fig9. Threshold olage s. Temperaure DS, Drain-Source olage () Fig10. Typical apaciance s.drain-source olage Fig11. Unclamped Inducive Tes ircui and waveforms Fig12. Swiching Time Tes ircui and waveforms 4
5 H037N06L TO-252 Mechanical Daa TO-252 Dimensions (Uni:mm) Symbol Min Nom Max Symbol Min Nom Max A F A F A L B L1 2.9REF L L D θ E TO-251 Mechanical Daa TO-251 Dimensions (Uni:mm) Symbol Min Nom Max Symbol Min Nom Max A F A F B L L L D θ E
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only;and
Feaures Low On-esisance Fas Swiching 100% Avalanche Tesed epeiive Avalanche Allowed up o Tjmax Lead-Free, ohs omplian Descripion H037N06L0650P designed by he rench processing echniques o achieve exremely
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www.addmek.com DESCRIPTI is a PWM power ED driver IC. The driving curren from few milliamps up o 1.5A. I allows high brighness power ED operaing a high efficiency from 4Vdc o 40Vdc. Up o 200KHz exernal
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UNISONIC TECHNOLOGIES CO., LTD 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N50 is a N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect
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N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
More informationTO-220F PKG. Total Power Dissipation ) W Derating Factor above W/
400V N-Channel MOSFET Features RDS(ON) (Max 0.55Ω) @ VGS=10V Gate Charge : 46.0 nc (Typical) Improved dv/dt capability 100% EAS Tested TO-220F PKG BVDSS RDS(ON) MAX ID 400V 0.55Ω 10A TO-220 PKG SFF SFP
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UNISONIC TECHNOLOGIES CO., LTD 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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CoolMOS 1) Power MOSFET ISOPLUS - elecrically isolaed surface o heasink Surface Moun Power Device S = V 25 = R DS(on) max = 45 mw Preliminary daa G KS D T D K Isolaed surface o heasink D K 3x S G KS nc
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UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
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Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D
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z SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =900V Low gate charge: Q g =52nC (Typ.) Low drain-source On resistance: R DS(on) =1.4Ω
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Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD ULB4132 Preliminary Power MOSFET 1A, 3V N-CHANNEL POWER MOSFET DESCRIPTION The ULB4132 uses advanced trench technology to provide excellent R DS(ON), low gate charge and
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MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
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OSG65R290xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
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UNISONIC TECHNOLOGIES CO., LTD UFZ24N-F 17A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFZ24N-F is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
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SFS04R02xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
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UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
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