IRF6609. HEXFET Power MOSFET V DSS R DS(on) max Qg. 20V GS = 10V 46nC GS = 4.5V

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1 l Low Conduction Losses l Low Switching Losses l Ideal Synchronous Rectifier MOSFET l Low Profile (<0.7 mm) l ual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques P B HEXFET Power MOSFET V SS R S(on) max Qg 20V 2.0mΩ@V GS = V 46nC 2.6mΩ@V GS = 4.5V irectfet ISOMETRIC MT Applicable irectfet Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT escription The combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency C-C converters that power the latest generation of processors operating at higher frequencies. The has been optimized for parameters that are critical in synchronous buck operating from 2 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 20 V V GS Gate-to-Source Voltage ±20 T C = 25 C Continuous rain Current, V V i 50 T A = 25 C Continuous rain Current, V Vf 3 A T A = 70 C Continuous rain Current, V V f 25 I M Pulsed rain Current c 250 C = 25 C Power issipation i 89 A = 25 C Power issipation f.8 W A = 70 C Power issipation f 2.8 Linear erating Factor W/ C T J Operating Junction and -40 to 50 C T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θja Junction-to-Ambient fj 45 R θja Junction-to-Ambient gj 2.5 R θja Junction-to-Ambient hj 20 C/W R θjc Junction-to-Case ij.4 R θj-pcb Junction-to-PCB Mounted.0 Notes through ˆ are on page /05/05

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS rain-to-source Breakdown Voltage 20 V V GS = 0V, I = 250µA ΒV SS / T J Breakdown Voltage Temp. Coefficient 5 mv/ C Reference to 25 C, I = ma R S(on) Static rain-to-source On-Resistance mω V GS = V, I = 3A e V GS = 4.5V, I = 25A e V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µA V GS(th) / T J Gate Threshold Voltage Coefficient -6. mv/ C I SS rain-to-source Leakage Current.0 µa V S = 6V, V GS = 0V 50 V S = 6V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage na V GS = 20V Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 9 S V S = V, I = 25A Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 5 V S = V Q gs2 Post-Vth Gate-to-Source Charge 4.7 nc V GS = 4.5V Q gd Gate-to-rain Charge 5 I = 7A Q godr Gate Charge Overdrive See Fig. 6 Q sw Switch Charge (Q gs2 Q gd ) 20 Q oss Output Charge 26 nc V S = V, V GS = 0V t d(on) Turn-On elay Time 24 V = 6V, V GS = 4.5Ve t r Rise Time 95 I = 25A t d(off) Turn-Off elay Time 26 ns Clamped Inductive Load t f Fall Time 9.8 C iss Input Capacitance 6290 V GS = 0V C oss Output Capacitance 850 pf V S = V C rss Reverse Transfer Capacitance 860 ƒ =.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS (Thermally limited) Single Pulse Avalanche Energy d 240 mj I AR Avalanche Currentc See Fig. 2, 3, 8a, A E AR Repetitive Avalanche Energy c 8b, mj iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 89 MOSFET symbol (Body iode) A showing the G I SM Pulsed Source Current 250 integral reverse S (Body iode)c p-n junction diode. V S iode Forward Voltage V T J = 25 C, I S = 25A, V GS = 0V e t rr Reverse Recovery Time ns T J = 25 C, I F = 25A Q rr Reverse Recovery Charge nc di/dt = A/µs e 2

3 I, rain-to-source Current (Α) R S(on), rain-to-source On Resistance (Normalized) I, rain-to-source Current (A) I, rain-to-source Current (A) 0 VGS TOP V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V 0 VGS TOP V 7.0V 4.5V 4.0V 3.5V 3.2V 2.9V BOTTOM 2.7V 2.7V 60µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) 2.7V 60µs PULSE WITH Tj = 50 C 0. V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I = 3A V GS = V.0 T J = 50 C T J = 25 C V S = V 60µs PULSE WITH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3

4 I, rain-to-source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) 000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 2 I = 7A V S = 20V VS= V 00 Ciss 8 Coss 6 0 Crss 4 2 V S, rain-to-source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITE BY R S (on) I S, Reverse rain Current (A).0 T J = 50 C.0.0 T J = 25 C V GS = 0V Tc = 25 C Tj = 50 C Single Pulse µsec msec msec 0 V S, Source-to-rain Voltage (V) V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 I, rain Current (A) V GS(th) Gate threshold Voltage (V) I = 250µA T J, Junction Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum rain Current vs. Case Temperature Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thja ) = R R 2 R 3 0. R R 2 R 3 τ J τ τ C J τ τ τ τ 2 τ 3 τ 0.0 τ 4 2 τ 3 τ SINGLE PULSE Ci= τi/ri Ci i/ri ( THERMAL RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc E-006 E t, Rectangular Pulse uration (sec) R 4 Ri ( C/W) τi (sec) R 4 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 E AR, Avalanche Energy (mj) Avalanche Current (A) 00 0 uty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax E-06.0E-05.0E-04.0E-03.0E-02.0E-0.0E00.0E0 tav (sec) Fig 2. Typical Avalanche Current vs.pulsewidth Single Pulse I = 25A Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 2, 3: (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 2, 3). t av = Average time in avalanche. = uty cycle in avalanche = t av f Z thjc (, t av ) = Transient thermal resistance, see figure ) Fig 3. Maximum Avalanche Energy vs. Temperature P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2T/ [.3 BV Z th ] E AS (AR) = P (ave) t av 6

7 E AS, Single Pulse Avalanche Energy (mj) 8 I = 3A I TOP A 4A BOTTOM 25A T J = 25 C T J = 25 C 200 R S (on), rain-to -Source On Resistance ( mω) V V GS, Gate-to-Source Voltage (V) Fig 4. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t..2µf 50KΩ.3µF Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy Vs. rain Current Vds Vgs Id.U.T. V - S V GS 3mA Vgs(th) I G I Current Sampling Resistors Fig 6a. Gate Charge Test Circuit L V S Qgs Qgs2 Qgd Qgodr Fig 6b. Gate Charge Waveform V - V S 90% V GS Pulse Width < µs uty Factor < 0.%.U.T % V GS Fig 7a. Switching Time Test Circuit t d(on) t r t d(off) t f Fig 7b. Switching Time Waveforms 5V V (BR)SS tp V S L RIVER R G 20V V GS tp.u.t IAS 0.0Ω - V A Fig 8a. Unclamped Inductive Test Circuit Fig 8b. Unclamped Inductive Waveforms 7 I AS

8 -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-Applied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 9. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, MT Outline (Medium Size Can, T-esignation). Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G = GATE = RAIN S = SOURCE S G S 8

9 irectfet Outline imension, MT Outline (Medium Size Can, T-esignation). Please see irectfet application note AN-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE A B C E F G H J K L M N P IMENSIONS METRIC IMPERIAL irectfet Part Marking 9

10 irectfet Tape & Reel imension (Showing component orientation). LOAE TAPE FEE IRECTION NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as ). For 0 parts on 7" reel, order TR REEL IMENSIONS STANAR OPTION (QTY 4800) TR OPTION (QTY 0) METRIC IMPERIAL METRIC IMPERIAL COE A B C E F G H NOTE: CONTROLLING IMENSIONS IN MM COE A B C E F G H IMENSIONS METRIC IMPERIAL Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.75mH, R G = 25Ω, I AS = 25A. ƒ Pulse width 400µs; duty cycle 2%. Surface mounted on in. square Cu board. Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. T C measured with thermal couple mounted to top (rain) of part. ˆ R θ is measured at T J of approximately 90 C. ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information./05

11 Note: For the most current drawings please refer to the IR website at: