SMC3056AK. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 6.6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

Size: px
Start display at page:

Download "SMC3056AK. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 6.6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS"

Transcription

1 SMC6AK Single N-Channel MOSFET ESCRIPTION SMC6A is the N-Channel enhancement mode power field effect transistors are using trench MOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package. PART NUMBER INFORMATION SMC 6A K - TR G a b c d e a : Company name. b : Product Serial number. c : Package code K: SOT-89 d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant FEATURES VS = V, I = 6.6A RS(ON)=mΩ(Typ.)@VGS=.V RS(ON)=mΩ(Typ.)@VGS=.V RS(ON)=mΩ(Typ.)@VGS=.8V Fast switch.8v Low gate drive applications High power and current handlingcapability APPLICATIONS Hend-Held Instruments Load Switch Battery Powered System S G SOT-89 G S ABSOLUTE MAXIMUM RATINGS (TA = C Unless otherwise noted ) Symbol Parameter Rating Units VSS rain-source Voltage V VGSS Gate-Source Voltage ± V 6.6 A I Continuous rain Current TA=7 C. A IM Pulsed rain Current A 6. A P Power issipation B.7 W TA=7 C. W TJ Operation Junction Temperature -/ C TSTG Storage Temperature Range -/ C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s Thermal Resistance Junction to Ambient BC Steady-State 7 C/W SMC6AK Rev.A

2 ELECTRICAL CHARACTERISTICS(TA = C Unless otherwise noted ) SMC6AK Symbol Parameter Condition Min Typ Max Unit Static Parameters BVSS rain-source Breakdown Voltage VGS=V, I=μA V VGS(th) Gate Threshold Voltage VS=VGS, I=μA..7 V IGSS Gate Leakage Current VS=V, VGS=±V ± na ISS Zero Gate Voltage rain Current VS=V, VGS=V, TJ= C VS=6V, VGS=V, TJ=7 C μa RS(ON) rain-source On-Resistance VGS=.V, I=A VGS=.V, I=6.6A VGS=.8V, I=A Gfs Forward Transconductance VS=V,I=A 6 S iode Characteristics VS iode Forward Voltage IS=A,VGS=V.7. V IS Continuous Source Current. A ynamic and Switching Parameters Qg Total Gate Charge Qgs Gate-Source Charge VS=V, VGS=.V, I =6A.8. Qgd Gate-rain Charge.6. Ciss Input Capacitance 8 Coss Output Capacitance VS=V, VGS=V, f=mhz 6 Crss Reverse Transfer Capacitance 6 td(on) Turn-On Time tr V=V, VGEN=.V,. 8 td(off) RG=Ω, I=A 9 Turn-Off Time tf 6 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)= C. B. The value of RθJA is measured with the device mounted on in FR- board in a still air environment with maximum junction temperature TJ(MAX)= C (initial temperature ). C. TJ(MAX)= C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. 8 8 mω nc pf ns The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. SMC6AK Rev.A

3 Normalized Threshold Voltage Ptot-Power(W) VGS(V) Capacitance(pF) RS(ON)(mΩ) SMC6AK TYPICAL CHARACTERISTICS 7 6 VGS=,.,, V 8 VGS=V 9 6 VGS=.V VGS=.8V VGS=.8V VGS=.V VGS=.V 6 8 VS-rain Source Voltage(V) Output Characteristics rain-source On Resistance VS=V I=6A 8 6 Ciss Coss 6 Crss Qg-Gate Charge(nC) Gate Charge VS-rain Source Voltage(V) Capacitance TJ-Junction Temperature( C) Gate Threshold Voltage 7 TA-Junction Temperature( C) Power issipation SMC6AK Rev.A

4 Normalized Transient Thermal Resistance Normalized On Resistance SMC6AK TYPICAL CHARACTERISTICS TJ-Junction Temperature( C) RS(ON) vs Junction Temperature 7 TJ-Case Temperature( C) rain Current vs TJ µs I (A).... VS Voltage (V) Maximum Safe Operation Area µs ms ms ms C. uty= Single Pulse..... Square Wave Pulse uration(sec) Thermal Transient Impedance t t uty Cycle, =t/t VGS Ton Toff V Qg VS Td(on) Tr Td(off) Tf Qgs Qgd 9% % Charge VGS Gate Chrge Waveform Switching Time Waveform SMC6AK Rev.A

5 SMC6AK SOT-89 PACKAGE IMENSIONS A E b E e e b c Symbol imensions In Millimeters imensions In Inches Min. Max. Min. Max. A b b c E E e e.9... L θ SMC6AK Rev.A

SMC3535K. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -5.8A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3535K. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -5.8A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS Single P-Channel MOSFET ESCRIPTION SMC33 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RS(ON),

More information

SMC2334SN. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 5.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC2334SN. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 5.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMCSN Single N-Channel MOSFET DESCRIPTION SMC is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC3223S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC3223S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC33S Single P-Channel MOSFET DESCRIPTION SMC33 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC3332S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3332S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC333S Single N-Channel MOSFET DESCRIPTION SMC333 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC3404S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3404S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC3S Single N-Channel MOSFET DESCRIPTION SMC3 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC3251S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC3251S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION Single P-Channel MOSFET DESCRIPTION SMC5 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high

More information

SMC3323SN. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.1A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3323SN. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.1A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC333SN Single P-Channel MOSFET DESCRIPTION SMC333 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC7ESN Single N-Channel MOSFET DESCRIPTION SMC7E is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC66SN Single N-Channel MOSFET DESCRIPTION SMC66 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC3407GS. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.2A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC3407GS. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.2A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC7GS Single P-Channel MOSFET DESCRIPTION SMC7G is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

VDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10.

VDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10. Dual N-Channel MOSFET DESCRIPTION FEATURES SMC4228 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored

More information

Symbol Parameter Rating Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V

Symbol Parameter Rating Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V Single P-Channel MOSFET DESCRIPTION SMC5455 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize

More information

Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC=25 C -22 A

Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC=25 C -22 A SMC22H Single P-Channel MOSFET DESCRIPTION SMC22 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored

More information

N-Channel VDS = 30V, ID = 7.8A. 10V. -4.5V. P-Channel VDS = -30V, ID = -7A

N-Channel VDS = 30V, ID = 7.8A. 10V. -4.5V. P-Channel VDS = -30V, ID = -7A Complementary MOSFET DESCRIPTION The SMC59 is the N+P-Channel Complementary mode power field effect transistors are using trench DMOS technology. advanced trench technology to provide excellent RDS(ON).

More information

Symbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C

Symbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C SMC93M Dual P-Channel MOSFET DESCRIPTION SMC93 is the Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.this advanced technology has been especially tailored

More information

STN2302. N-Channel Enhancement Mode MOSFET. 20V N-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION

STN2302. N-Channel Enhancement Mode MOSFET. 20V N-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation

More information

P-Channel MOSFET KI2955DV. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage. Tstg -55 to 150

P-Channel MOSFET KI2955DV. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage. Tstg -55 to 150 P-Channel ( SOT--6 ) Unit: mm. -. Features 6. VS (V) =-6V I =-. A (VGS =-V) RS(ON) < 9mΩ (VGS =-V) RS(ON) < mω (VGS =-.V) -..6.8 -.. +. -.. -. +. -.. -. -..68 -. G S Absolute Maximum Ratings Ta = Parameter

More information

STN4420. N-Channel Enhancement Mode MOSFET. 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE APPLICATIONS PIN CONFIGURATION

STN4420. N-Channel Enhancement Mode MOSFET. 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE APPLICATIONS PIN CONFIGURATION DESCRIPTION The STN is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable

More information

SMC4860NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 50A APPLICATIONS PART NUMBER INFORMATION

SMC4860NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 50A APPLICATIONS PART NUMBER INFORMATION MC86NA ingle N-Channel MOFET DECRIPTION MC86 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE

AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching

More information

N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) SOP-8 A D

N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) SOP-8 A D SM Type N-Channel Enhancement Features VS (V) = 30V SOP-8 I = 6 A (VGS = 0V) RS(ON) < 6.8mΩ (VGS = 0V) HEXFET Power S 8 A.50 0.5 S S 2 3 7 6 0.2 +0.04-0.02 G 4 5 Absolute Maximum Ratings Ta = 25 Parameter

More information

SMC4732PA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 60A APPLICATIONS PART NUMBER INFORMATION

SMC4732PA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 60A APPLICATIONS PART NUMBER INFORMATION MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 33 A TA=70 C 26 A

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 33 A TA=70 C 26 A MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

SMC V N-Channel MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION PART NUMBER INFORMATION

SMC V N-Channel MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION PART NUMBER INFORMATION ECRIPTION The MC4866 is the N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

SMC4636NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 60V, ID = 13A APPLICATIONS PART NUMBER INFORMATION

SMC4636NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 60V, ID = 13A APPLICATIONS PART NUMBER INFORMATION MC3NA ingle N-Channel MOFET DECRIPTION MC3 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

STP4435. P-Channel Enhancement Mode MOSFET. -30V P-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION

STP4435. P-Channel Enhancement Mode MOSFET. -30V P-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION DESCRIPTION The STP35 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is

More information

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 18 A TA=70 C 14 A

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 18 A TA=70 C 14 A MC86NA ingle N-Channel MOFET DECRIPTION MC86 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 23 A TA=70 C 18.5 A

Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 23 A TA=70 C 18.5 A MCNA ingle N-Channel MOFET DECRIPTION MC is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

MOSFET SI7129DN (KI7129DN)

MOSFET SI7129DN (KI7129DN) P-Channel SI79N (KI79N) Features -8 (FN) VS (V) =-3V I =-35 A (VGS =-V) RS(ON)

More information

SMC4734PA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 60A APPLICATIONS PART NUMBER INFORMATION

SMC4734PA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 60A APPLICATIONS PART NUMBER INFORMATION MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize

More information

SMC4866NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 42A APPLICATIONS PART NUMBER INFORMATION

SMC4866NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 42A APPLICATIONS PART NUMBER INFORMATION MC866NA ingle N-Channel MOFET DECRIPTION MC866 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to

More information

N-Channel MOSFET IRF7413 (KRF7413) Top View. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage

N-Channel MOSFET IRF7413 (KRF7413) Top View. Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage SM Type IRF743 (KRF743) SOP- Features VS (V) = 3V I = A (VGS = V) RS(ON) < mω (VGS = V).5.5 S S S G 7 3 4 5. +.4 -. Source Source 3 Source 4 Gate 5 rain rain 7 rain rain Top View Absolute Maximum Ratings

More information

WPM9435. P-Channel Enhancement Mode MOSFET. Description. Features. Application. Order information WPM9435

WPM9435. P-Channel Enhancement Mode MOSFET. Description. Features. Application. Order information WPM9435 WPM9435 P-Channel Enhancement Mode MOSFET www.willsemi.com escription The WPM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, MOS trench

More information

Complementary MOSFET

Complementary MOSFET General Description uses advanced trench technology to provide excellent Rds(on) and low gate charge. Complementary MOSFET Features N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)

More information

AM8205 MOSFET+SCHOTTKY DIODE 20V DUAL N-CHANNEL ENHANCEMENT MODE

AM8205 MOSFET+SCHOTTKY DIODE 20V DUAL N-CHANNEL ENHANCEMENT MODE DESCRIPTION The is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high

More information

P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2

P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2 Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68

More information

SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ

SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

More information

PKP3105. P-Ch 30V Fast Switching MOSFETs

PKP3105. P-Ch 30V Fast Switching MOSFETs Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin

More information

SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF)   Features. Absolute Maximum Ratings Ta = 25 SOT-.9 -. +.. -. +. Unit: mm Features VDS (V) = V ID =.8 A (VGS = V) RDS(ON) < 6mΩ (VGS = V) RDS(ON) < mω (VGS =.V). -. +..9 -. +..9 -. +.. -. +.... -. +. Pb Free Package May be Available. The G Suffix

More information

PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.

PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration. General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

SMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF)   Features. Absolute Maximum Ratings Ta = 25 P-Channel SOT-.9 -.. -. Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V). -..95 -..9 -.. -..55.. -. +.5 RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May

More information

AM3416 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET

AM3416 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES is available in a SOT-23 package. 20V/6A, RDS(ON)=26mΩ(Max.) @VGS=4.5V RDS(ON)=37mΩ(Max.) @VGS=2.5V ESD Protected Super High Dense Cell Design Reliable and

More information

Complementary MOSFET

Complementary MOSFET General Description ELM66EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. Maximum Absolute Ratings ELM66EA-S N-channel P-channel Vds=V Vds=-V Id=3.A(Vgs=.V) Id=-.A(Vgs=-.V)

More information

SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)   Features. Absolute Maximum Ratings Ta = 25 P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S

More information

20V P-Channel Enhancement-Mode MOSFET

20V P-Channel Enhancement-Mode MOSFET 1 3 FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System

More information

AM2300. AiT Semiconductor Inc. APPLICATION ORDER INFORMATION PIN CONFIGURATION

AM2300. AiT Semiconductor Inc.  APPLICATION ORDER INFORMATION PIN CONFIGURATION DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). FEATURES 20V/4.0A, RDS(ON)

More information

AM V N-CHANNEL ENHANCEMENT MODE MOSFET

AM V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process

More information

30V N-Channel Enhancement Mode MOSFET DESCRIPTION The UP8404 is the N-Channel logic enhancement mode power field effect transistor is produced using h

30V N-Channel Enhancement Mode MOSFET DESCRIPTION The UP8404 is the N-Channel logic enhancement mode power field effect transistor is produced using h 30V N-Channel Enhancement Mode MOSFET DESCRIPTION The UP8404 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This

More information

AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE

AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The is available in DFN8(3x3) Package ORDERING INFORMATION Package Type Part Number DFN8(3x3) J8R J8 SPQ: 5,000pcs/Reel J8VR V: Halogen free Package Note R: Tape & Reel AiT provides all RoHS

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of

More information

WNM2046 G S WNM2046. Descriptions. Features. Applications. Order information. Single N-Channel, 20V, 0.

WNM2046 G S WNM2046. Descriptions. Features. Applications. Order information.   Single N-Channel, 20V, 0. WNM2046 Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.com (V) 20 Typical Rds(on) (Ω) 20@ =4.5V 60@ =2.5V 0.315@ =1.8V G S escriptions FN1006-3L The WNM2046 is N-Channel enhancement

More information

SPN230T06. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control

SPN230T06. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control DESCRIPTION The is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored

More information

Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V

Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V % EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 3V mω A Description TO Pin Configuration

More information

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401)  Features. Absolute Maximum Ratings Ta = 25 SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38

More information

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 ) SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N09T Rev. 1.01 Jun. 2016 SGP100N09T 100V N-Channel MOSFET Description The SG-MOSFET

More information

SPN9910. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch Synchronous Buck Converter

SPN9910. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch Synchronous Buck Converter DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case

Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

SPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool

SPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool DESCRIPTION The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially

More information

FKD4903. N-Ch and P-Ch Fast Switching MOSFETs

FKD4903. N-Ch and P-Ch Fast Switching MOSFETs FKD93 % EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID V 3mΩ 3A -V 5mΩ -A Description

More information

N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage

N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S

More information

CYStech Electronics Corp.

CYStech Electronics Corp. N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH BVDSS 2V -2V Features Simple drive requirement Low gate charge Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Spec.

More information

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6 Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.

More information

G S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3

G S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs

More information

SPN180T10. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control

SPN180T10. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially

More information

MOSFET SI4558DY (KI4558DY)

MOSFET SI4558DY (KI4558DY) Features SOP- N-Channel:VDS=3V ID=A RDS(ON) < 4mΩ (VGS = V) RDS(ON) < mω (VGS = 4.5V) P-Channel:VDS=-3V ID=-A.5.5 RDS(ON) < 4mΩ (VGS =-V) RDS(ON) < 7mΩ (VGS =-4.5V). +.4 -. Source Gate 3 Source 4 Gate

More information

Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100

Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100 Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered

More information

Pin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1

Pin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1 General Description, N & P Pair enhancement mode MOSFET, uses Advanced Trench to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and

More information

G S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.

G S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0. P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Dual P-Channel Enhancement Mode MOSFET

Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

Complementary Trench MOSFET AO4629 (KO4629) SOP P-channel

Complementary Trench MOSFET AO4629 (KO4629) SOP P-channel Features N-Channel VDS (V) = 3V ID = A (VGS = V) RDS(ON) < 3mΩ (VGS = V) RDS(ON) < 4mΩ (VGS = 4.V) P-Channel VDS (V) = -3V ID = -. A (VGS = -V) RDS(ON) < 4mΩ (VGS = -V) RDS(ON) < 74mΩ (VGS = -4.V) SOP-8.

More information

ZXM64N02 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.040Ω; ID=5.4A MSOP8

ZXM64N02 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.040Ω; ID=5.4A MSOP8 2V N-CHANNEL ENHANCEMENT MOE MOSFET SUMMARY V(BR)SS=2V; RS(ON)=.4Ω; I=5.4A ESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low

More information

Pin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1

Pin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1 General Description, N & P Pair enhancement mode MOSFET, uses Advanced Trench to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and

More information

SPN9971. N-Channel Enhancement Mode MOSFET. Power Management in Note book Powered System DC/DC Converter Load Switch

SPN9971. N-Channel Enhancement Mode MOSFET. Power Management in Note book Powered System DC/DC Converter Load Switch DESCRIPTION The SPN9971 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN9971 has been designed specifically to

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Description The is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density

More information

SPN6242. N-Channel Enhancement Mode MOSFET

SPN6242. N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6242 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

G S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1.

G S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1. AP236AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate rive Lower On-resistance Surface-Mount evice R S(ON) 35mΩ RoHS-compliant, Halogen-free G S I 5A BV SS 3V escription Advanced Power

More information

SMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF)   Features. Absolute Maximum Ratings Ta = 25 N-Channel SI8CDS-HF (KI8CDS-HF) Features VDS (V) = V ID =.6 A (VGS = V) RDS(ON) < mω (VGS = V) RDS(ON) < mω (VGS =.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D.8 -.

More information

AM9435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE

AM9435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to

More information

CYStech Electronics Corp.

CYStech Electronics Corp. Page No. : / 8 N-Channel Enhancement Mode Power MOSFET BVDSS ID@VGS=V, TC=25 C Features ID@VGS=V, TA=25 C Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating

More information

SPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool

SPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool DESCRIPTION The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially

More information

SPN2304. N-Channel Enhancement Mode MOSFET

SPN2304. N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

PIN CONFIGURATION(SOP 8P)

PIN CONFIGURATION(SOP 8P) DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

SPP1433. P-Channel Enhancement Mode MOSFET

SPP1433. P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1433 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

SPP2303. P-Channel Enhancement Mode MOSFET

SPP2303. P-Channel Enhancement Mode MOSFET DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to

More information

Common-Drain Dual N-Channel Enhancement Mode MOSFET

Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8206 is the logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize

More information

SPN8822. Common-Drain Dual N-Channel Enhancement Mode MOSFET

SPN8822. Common-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822 is the logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2319W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

SPN125T06. N-Channel Enhancement Mode MOSFET

SPN125T06. N-Channel Enhancement Mode MOSFET DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored

More information

G S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG

G S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from

More information

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

Dual N - Channel Enhancement Mode Power MOSFET 4502

Dual N - Channel Enhancement Mode Power MOSFET 4502 Dual N - Channel Enhancement Mode Power MOSFET 4 344 DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or

More information

PIN CONFIGURATION(SOT-23-3L)

PIN CONFIGURATION(SOT-23-3L) DESCRIPTION The SPP2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

G S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3

G S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3 N-channel Enhancement-mode Power MOSFET Simple rive Requirement Low Gate Charge Surface Mount evice R S(ON) 2mΩ RoHS-compliant, halogen-free G S I.7A BV SS 3V escription Advanced Power MOSFETs from APEC

More information

SPN166T04 N-Channel Enhancement Mode MOSFET

SPN166T04 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN166T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially

More information

SPP2301D. P-Channel Enhancement Mode MOSFET

SPP2301D. P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2301D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

SPN2302. N-Channel Enhancement Mode MOSFET

SPN2302. N-Channel Enhancement Mode MOSFET DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to

More information

SPP3413. P-Channel Enhancement Mode MOSFET

SPP3413. P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

SPN166T06 N-Channel Enhancement Mode MOSFET

SPN166T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN166T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially

More information

SPP2305. P-Channel Enhancement Mode MOSFET

SPP2305. P-Channel Enhancement Mode MOSFET DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to

More information