IRF6710S2TRPbF IRF6710S2TR1PbF
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- Bridget Lawson
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1 Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHS Compliant Containing No Lead and Halogen Free l Low Profile (<.7 mm) l ual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core C-C Converters l Optimized for Control FET pplication l Compatible with existing Surface Mount Techniques l % Rg tested IRF67S2TRPbF IRF67S2TRPbF irectfet Power MOSFET Typical values (unless otherwise specified) P V SS V GS R S(on) R S(on) 25V max ±2V max 4.5mΩ@ V 9.mΩ@ 4.5V Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 8.8nC 3.nC.3nC 8.nC 4.4nC.8V pplicable irectfet Outline and Substrate Outline S irectfet ISOMETRIC S S2 SB M2 M4 L4 L6 L8 escription The IRF67S2TRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 8%. The IRF67S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency C-C converters that power the latest generation of processors operating at higher frequencies. The IRF67S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 2 volt bus converters. bsolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 25 V V GS Gate-to-Source Voltage ±2 T = 25 C Continuous rain Current, V V e 2 T = 7 C Continuous rain Current, V V e T C = 25 C Continuous rain Current, V V f 37 I M Pulsed rain Current g E S Single Pulse valanche Energy h 24 mj I R valanche Currentg 2 5 I = I = V S = 2V VS= 3V 5 T J = 25 C T J = 25 C V GS, Gate-to-Source Voltage (V) Fig. Typical On-Resistance vs. Gate Voltage Q G Total Gate Charge (nc) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. T C measured with thermocouple mounted to top (rain) of part. Click on this section to link to the irectfet Website. Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in. square Cu board, steady state. Starting T J = 25 C, L =.49mH, R G = 25Ω, I S = /6/
2 IRF67S2TR/TRPbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS rain-to-source Breakdown Voltage 25 V V GS = V, I = 25µ ΒV SS / T J Breakdown Voltage Temp. Coefficient 7 mv/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance mω V GS = V, I = 2 i 9..9 V GS = 4.5V, I = i V GS(th) Gate Threshold Voltage V V S = V GS, I = 25µ V GS(th) / T J Gate Threshold Voltage Coefficient -7. mv/ C I SS rain-to-source Leakage Current. µ V S = 2V, V GS = V 5 V S = 2V, V GS = V, T J = 25 C I GSS Gate-to-Source Forward Leakage n V GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V gfs Forward Transconductance 2 S V S = 5V, I = Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 2.3 V S = 3V Q gs2 Post-Vth Gate-to-Source Charge.3 nc V GS = 4.5V Q gd Gate-to-rain Charge 3. I = Q godr Gate Charge Overdrive 2.2 See Fig. 5 Q sw Switch Charge (Q gs2 Q gd ) 4.3 Q oss Output Charge 4.4 nc V S = V, V GS = V R G Gate Resistance.3 Ω t d(on) Turn-On elay Time 7.9 V = 3V, V GS = 4.5VÃi t r Rise Time 2 I = t d(off) Turn-Off elay Time 5.2 ns R G = 6.2Ω t f Fall Time 6. C iss Input Capacitance 9 V GS = V C oss Output Capacitance 32 pf V S = 3V C rss Reverse Transfer Capacitance 5 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 9 (Body iode) I SM Pulsed Source Current (Body iode)ãg V S iode Forward Voltage. V t rr Reverse Recovery Time 4 2 ns Q rr Reverse Recovery Charge 8. 2 nc ƒ =.MHz MOSFET symbol Conditions showing the integral reverse p-n junction diode. T J = 25 C, I S =, V GS = V i T J = 25 C, I F = di/dt = 2/µs i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 4µs; duty cycle 2%. 2
3 IRF67S2TR/TRPbF bsolute Maximum Ratings Parameter Max. Units = 25 C Power issipation e.8 W = 7 C Power issipation e.3 C = 25 C Power issipation f 5 T P Peak Soldering Temperature 27 C Operating Junction and -55 to 75 T J T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient el 82 R θj Junction-to-mbient jl 2.5 R θj Junction-to-mbient kl 2 C/W R θjc Junction-to-Case fl 9.8 R θj-pcb Junction-to-PCB Mounted. Linear erating Factor e.2 W/ C = Thermal Response ( Z thj )...2. R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri SINGLE PULSE ( THERML RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc E-6 E t, Rectangular Pulse uration (sec) Ri ( C/W) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-mbient τ C τ τι (sec) Notes: ƒ Surface mounted on in. square Cu board, steady state. T C measured with thermocouple incontact with top (rain) of part. ˆ Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š R θ is measured at T J of approximately 9 C. ƒ Surface mounted on in. square Cu Mounted on minimum footprint full size board with metalized board (still air). back and with small clip heatsink. (still air) 3
4 C, Capacitance(pF) Typical R S (on) (mω) I, rain-to-source Current (Α) Typical R S(on) (Normalized) I, rain-to-source Current () I, rain-to-source Current () IRF67S2TR/TRPbF VGS TOP V 5.V 4.5V 4.V 3.5V 3.V 2.8V BOTTOM 2.5V VGS TOP V 5.V 4.5V 4.V 3.5V 3.V 2.8V BOTTOM 2.5V. 2.5V 6µs PULSE WITH Tj = 25 C.. V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics 2.5V 6µs PULSE WITH Tj = 75 C. V S, rain-to-source Voltage (V) Fig 5. Typical Output Characteristics 2. I = 2 VGS = 4.5V V GS = V T J = 75 C T J = 25 C T J = -4 C.5.. V S = 5V 6µs PULSE WITH V GS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 3 25 T J = 25 C Vgs = 4.V Vgs = 4.5V Vgs = 5.V Vgs = V 2 C iss 5 C oss C rss 5 V S, rain-to-source Voltage (V) I, rain Current () Fig 8. Typical Capacitance vs.rain-to-source Voltage Fig 9. Typical On-Resistance vs. rain Current and Gate Voltage 4
5 I, rain Current () E S, Single Pulse valanche Energy (mj) V GS (th) Gate threshold Voltage (V) I, rain-to-source Current () I S, Reverse rain Current () T J = 75 C T J = 25 C T J = -4 C V GS = V V S, Source-to-rain Voltage (V) Fig. Typical Source-rain iode Forward Voltage 4 IRF67S2TR/TRPbF Tj = 75 C Single Pulse V S, rain-tosource Voltage (V) 3.. T = 25 C OPERTION IN THIS RE LIMITE BY R S (on) C msec msec µsec Fig. Maximum Safe Operating rea I =. I =.m I = 25µ I = 25µ Gfs, Forward Transconductance (S) T C, Case Temperature ( C) Fig 2. Maximum rain Current vs. Case Temperature 7 T J = 75 C T J = 25 C 3 2 V S = V 38µs PULSE WITH I, rain-to-source Current () T J, Temperature ( C ) Fig 3. Typical Threshold Voltage vs. Junction Temperature I TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 4. Typ. Forward Transconductance vs. rain Current Fig 5. Maximum valanche Energy vs. rain Current 5
6 E R, valanche Energy (mj) valanche Current () IRF67S2TR/TRPbF uty Cycle = Single Pulse llowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse)...5. llowed avalanche Current vs avalanche pulsewidth, tav, assuming Τ j = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 6. Typical valanche Current Vs.Pulsewidth 3 2 TOP Single Pulse BOTTOM % uty Cycle I = Starting T J, Junction Temperature ( C) Notes on Repetitive valanche Curves, Figures 6, 7: (For further info, see N-5 at valanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in valanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 9a, 9b. 4. P (ave) = verage power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = llowable avalanche current. 7. T = llowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 6, 7). t av = verage time in avalanche. = uty cycle in avalanche = t av f Z thjc (, t av ) = Transient thermal resistance, see figure ) Fig 7. Maximum valanche Energy vs. Temperature P (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2T/ [.3 BV Z th ] E S (R) = P (ave) t av 6
7 IRF67S2TR/TRPbF Id Vds Vgs 2K K UT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 8a. Gate Charge Test Circuit Fig 8b. Gate Charge Waveform V (BR)SS 5V tp V S L RIVER R G 2V tp.u.t I S.Ω - V I S Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms R V GS V S.U.T. V GS 9% R G - V VV GS Pulse Width µs uty Factor. % % V S t d(off) t f t d(on) t r Fig 2a. Switching Time Test Circuit Fig 2b. Switching Time Waveforms 7
8 IRF67S2TR/TRPbF -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 9. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Board Footprint, S Outline (Small Size Can). Please see irectfet application note N-35 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. CL G = GTE = RIN S = SOURCE G S S Optional additional pad to allow interchangeability with S2 outline devices. Mandatory pads to fit S outline. 8
9 IRF67S2TR/TRPbF irectfet Outline imension, S Outline (Small Size Can). Please see N-35 for irectfet assembly details and stencil and substrate design recommendations COE B C E F G H J K L M R P IMENSIONS METRIC IMPERIL MIN N/ MX N/ MIN N/ MX N/ irectfet Part Marking GTE MRKING LOGO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free" 9
10 IRF67S2TR/TRPbF irectfet Tape & Reel imension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 48 parts. (ordered as IRF67S2TRPBF). For parts on 7" reel, order IRF67S2TRPBF REEL IMENSIONS STNR OPTION (QTY 48) TR OPTION (QTY ) METRIC IMPERIL METRIC IMPERIL COE MIN MX MIN MX MIN MX MIN MX 33. N.C N.C N.C 6.9 N.C B 2.2 N.C.795 N.C 9.6 N.C.75 N.C C N.C.59 N.C.5 N.C.59 N.C E. N.C N.C N.C 2.3 N.C F N.C 8.4 N.C.724 N.C 3.5 N.C.53 G N.C H N.C LOE TPE FEE IRECTION NOTE: CONTROLLING IMENSIONS IN MM COE B C E F G H MIN IMENSIONS METRIC IMPERIL MX N.C.6 MIN MX N.C.63 ata and specifications subject to change without notice. This product has been designed and qualified to MSL rating for the Consumer market. dditional storage requirement details for irectfet products can be found in application note N35 on IR s Web site. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information.3/2
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PD - 9733 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
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P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
More informationIRLS3034PbF IRLSL3034PbF
PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationIRF6641TRPbF DIGITAL AUDIO MOSFET. Key Parameters V DS 200 V R DS(ON) V GS = 10V 51 m Qg typ. 34 nc R G(int) typ. 1.0
Features Latest MOSFET silicon technology Key parameters optimized for Class-D audio amplifier applications Low R DS(on) for improved efficiency Low Qg for better THD and improved efficiency Low Qrr for
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationIRFS4127PbF IRFSL4127PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationV DSS R DS(on) max (mω)
P- 94087 IRF724 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET vailable in Tape & Reel Ω) I V SS R S(on) max (mω) -40V 4@V GS = -0V -6.2 70@V GS = -4.5V -5.0 escription
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationS2 1 G2 2 G1 4. RoHS Compliant Containing no Lead, no Bromide and no Halogen. IRF9358PbF SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4000
P 9766 HEXFET Power MOSFET V S 3 V R S(on) max (@V GS = V) 6.3 mω S2 G2 2 8 7 2 2 R S(on) max (@V GS = 4.5V) 23.8 mω Q g (typical) 9 nc I (@T = 25 C) S 3 G 4 6 5 SO8 9.2 pplications Charge and ischarge
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
Generation V Technology l l Ultra Low OnResistance l PChannel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More informationIRLMS5703PbF. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.18Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) Pchannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationIRF9910PbF HEXFET Power MOSFET R DS(on) max
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationIRLMS6702PbF HEXFET Power MOSFET
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) PChannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationIRFR3710ZPbF IRFU3710ZPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
UTOMOTIVE RE dvanced Process Technology Optimized for utomotive Motor rive, C-C and other Heavy Load pplications Exceptionally mall Footprint and Low Profile High Power ensity Low Parasitic Parameters
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R
More informationAUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
UTOMOTIVE RE dvanced Process Technology Optimized for utomotive Motor rive, C-C and other Heavy Load pplications Exceptionally mall Footprint and Low Profile High Power ensity Low Parasitic Parameters
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationIRLMS1503PbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More information