CoolSET TM -F1. TDA Off-Line SMPS Controller with 600 V Sense CoolMOS TM on Board. Power Management & Supply. Data Sheet, Aug.

Transcription

1 Data Sheet, Aug CoolSE M -F1 DA Off-Line SMPS Controller with 600 V Sense CoolMOS M on Board Power Management & Supply Never stop thinking.

2 Revision History: DS0 Previous Version: Page Subjects (major changes since last revision) 4 Update of available types. For questions on technology, delivery and prices please contact the Infineon echnologies Offices in Germany or the Infineon echnologies Companies and Representatives worldwide: see our webpage at CoolMOS M, CoolSE M are a trademarks of Infineon echnologies AG. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: mcdocu.comments@infineon.com Edition Published by Infineon echnologies AG, St.-Martin-Strasse 53, München, Germany Infineon echnologies AG All Rights Reserved. Attention please! he information herein is given to describe certain components and shall not be considered as warranted characteristics. erms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon echnologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon echnologies Office in Germany or our Infineon echnologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon echnologies Office. Infineon echnologies Components may only be used in life-support devices or systems with the express written approval of Infineon echnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 1 Overview Features Pin Configurations P-DIP-8-6 for Applications with P OU 40 W: DA 16831/2/3/ P-DSO for Applications with P OU 20 W: DA 16831G/2G/3G Block Diagram Circuit Description Electrical Characteristics Absolute Maximum Ratings Operating Range Supply Section Oscillator Section PWM Section Output Section Application Circuit Package Outlines Data Sheet

4 Off-Line SMPS Controller with 600 V Sense CoolMOS M on Board DA CoolSE 1 Overview 1.1 Features PWM controller + sense CoolMOS attached in one compact package 600 V avalanche rugged CoolMOS ypical R DSon = Ω at j = 25 C Only 4 active Pins Standard DIP-8 Package for Output Power 40 W Only few external components required Low start up current Current mode control Input Undervoltage Lockout Max. Duty Cycle limitation hermal Shutdown Modulated Gate Drive for low EMI P-DIP-8-6P-DIP-8-4, -6 P-DSO P-DSO-14-3, -8, -9, -11, 14 ype Ordering Code Package DA Q67000-A9420 P-DIP-8-6 DA Discontiued 1) P-DIP-8-6 DA Q67000-A9389 P-DIP-8-6 DA Discontiued 1) P-DIP-8-6 DA 16831G Q67000-A9421 P-DSO DA 16832G Discontiued 1) P-DSO DA 16833G Q67000-A9419 P-DSO ) Last ordering: Last delivery: Data Sheet

5 Overview Device Output Power Range/Required Heatsink 1) V in = VAC V in = VAC DA W / no heatsink 10 W / no heatsink DA W / 6 cm 2 20 W / no heatsink DA W / 3 cm 2 40 W / no heatsink DA W / 3 cm 2 40 W / no heatsink DA 16831G 10 W / no heatsink 10 W / no heatsink DA 16832G 20 W / 8 cm 2 20 W / no heatsink DA 16833G 20 W / no heatsink 40 W / 3 cm 2 1) A = 70 C Data Sheet

6 Overview 1.2 Pin Configurations P-DIP-8-6 for Applications with P OU 40 W: DA 16831/2/3/4 N.C. 1 8 GND FB 2 7 V CC N.C. 3 6 N.C. D 4 5 D AEP02782 Figure 1 DA 16831/2/3/4 Pin Definitions and Functions Pin Symbol Function 1 N.C. Not Connected 2 FB PWM Feedback Input 3 N.C. Not Connected 4 D 600 V Drain CoolMOS 5 D 600 V Drain CoolMOS 6 N.C. Not Connected 7 V CC PWM Supply Voltage 8 GND PWM GND and Source of CoolMOS Data Sheet

7 Overview P-DSO for Applications with P OU 20 W: DA 16831G/2G/3G GND FB N.C. N.C. D D D GND 13 V CC 12 N.C. 11 N.C. 10 D 9 D 8 D AEP02783 Figure 2 DA 16831G/2G/3G Pin Definitions and Functions Pin Symbol Function 1 GND PWM GND and CoolMOS Source 2 FB PWM Feedback Input 3 N.C. Not Connected 4 N.C. Not Connected 5, 6, 7 D 600 V Drain CoolMOS 8, 9, 10 D 600 V Drain CoolMOS 11 N.C. Not Connected 12 N.C. Not Connected 13 V CC PWM Supply Voltage 14 GND PWM GND and Source of CoolMOS Data Sheet

8 Overview 1.3 Block Diagram uvlo bandgap + - biaspwm R FB V REF bias + - AEB V CC pwmss osc tff kippl J K Q Q pwmop slogpwm pwmpls FB Drain tempshutdown pwmcomp logpwm gtdrv pwmrmp + - rlogpwm slogpwm R S Q Q v04sst + - alogpwm csshutdown R Sense - + GND Figure 3 Block Diagram Data Sheet

9 Circuit Description 2 Circuit Description he DA is a current mode pulse width modulator with integrated sense CoolMOS transistor. It fulfills the requirements of minimum external control circuitry for a flyback application. Current mode control means that the current through the MOS transistor is compared with a reference signal derived from the output voltage of the flyback application. he result of that comparison determines the on time of the MOS transistor. o minimize external circuitry the sense resistor which gives information about MOS current is integrated. he oscillator resistor and capacitor which determine the switching frequency are integrated, too. Special efforts have been made to compensate temperature dependency and to minimize tolerances of this resistor. he circuit in detail: (see Figure 3) Start Up Circuit (uvlo) Uvlo is monitoring the external supply voltage V CC. When V CC is exceeding the on threshold V CCH = 12 V, the bandgap, the bias circuit and the soft start circuit are switched on. When V CC is falling below the off-threshold V CCL = 9 V the circuit is switched off. During start up the current consumption is about 30 µa. Bandgap (bg) he bandgap generates an internal very accurate reference voltage of 5.5 V to supply the internal circuits. Current Source (bias) he bias circuit provides the internal circuits with constant current. Oscillator (osc) he oscillator is generating a frequency twice the switching frequency f switch = 100 khz. Resistor, capacitor and current source which determine the frequency are integrated. he charging and discharging current of the implemented oscillator capacitor is internally trimmed, in order to achieve a very accurate switching frequency. emperature coefficient of switching frequency is very low (see Page 18). Divider Flip Flop (tff) ff is a flip flop which divides the oscillator frequency by one half to create the switching frequency. he maximum duty cycle is set to Dmax = 0.5. Data Sheet

10 Circuit Description Current Sense Amplifier (pwmop) he positive input of the pwmop is applied to the internal sense resistor. With the internal sense resistor (R sense ) the sensed current coming from the CoolMOS is converted into a sense voltage. he sense voltage is amplified with a gain of 32 db. he amplified sense voltage is connected to the negative input of the pwm comparator. Each time when the CoolMOS transistor is switched on, a current spike is superposed to the true current information. o eliminate this current spike the sense voltage is smoothed via an internal resistor capacitor network with a time constant of d1 = 100 ns. his is the first leading edge blanking and only a small spike is left. o reduce this small spike the current sense amplifier is creating a virtual ramp at the output. his is done by a second resistor capacitor network with d2 = 100 ns and an op-offset of 0.8 V which is seen at the output of the amplifier. When gate drive is switched off the output capacitor is discharged via pulse signal pwmpls. he oscillator signal slogpwm sets the RS-flip-flop. he gate drive circuit is switched on, when capacitor voltage exceeds the internal threshold of 0.4 V. his leads to a linear ramp, which is created by the output of the amplifier. herefore duty cycle of 0% is possible. he amplifier is compensated through an internal compensation network. he transfer function of the amplifier can be described as V o V i K i = p ; ( 1 + p) p = jω the step response is described with V o = V i K i t on + e K 40 i = t on -t on = 850 ns Comparator (pwmcomp) he comparator pwmcomp compares the amplified current signal pwmrmp of the CoolMOS with the reference signal pwmin. Pwmin is created by an external optocoupler or external transistor and gives the information of the feedback circuitry. When the pwmrmp exceeds the reference signal pwmin the comparator switches the CoolMOS off. Data Sheet

11 Circuit Description Logic (logpwm) he logic logpwm comprises a RS-flip-flop and a NAND-gate. he NAND-gate insures that CoolMOS transistor is only switched on when sosta is on and pwmin has exceeded minimum threshold and pwmin is below pwmrmp and currentshutdown is off and tempshutdown is off and tff sets the starting impulse. CoolMOS transistor is switched off when pwmrmp exceeds pwmin or duty cycle exceeds 0.5 or pwmcs exceeds I max or silicon temperature exceeds max or uvlo is going below threshold. he RS-flip-flop ensures that with every frequency period only one switch on can occur (double pulse suppression). Gate Drive (gtdrv) Gtdrv is the driver circuit for the CoolMOS and is optimized to minimize EMI influences and to provide high circuit efficiency. his is done by smoothing the switch on slope when reaching the CoolMOS threshold. Leading switch on spike is minimized then. When CoolMOS is witched off, the falling slope of the gate driver is slowed down when reaching 2 V. So an overshoot below ground can't occur. Also gate drive circuit is designed to eliminate cross conduction of the output stage. Current Shut Down (cssd) Current shut down circuit switches the CoolMOS immediately off when the sense current is exceeding an internal threshold of 100 mv at R sense. empshutdown (tsd) empshutdown switches the CoolMOS off when junction temperature of the PWM controller is exceeding an internal threshold. Data Sheet

12 Circuit Description kippl, f = 200 khz (oscillator) pwmpls, (tff) f = 100 khz slogpwm (tff) pwmrmp (pwmop) V FB Gate Start at 0.4 V op-offset = 0.8 V alogpwm (pwmcomp) rlogpwm (pwmcomp) gtrdrv Q (logpwm) AED02766 Figure 4 Signal Diagram Data Sheet

13 Electrical Characteristics 3 Electrical Characteristics 3.1 Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks min. max. Supply Voltage V CC -0.3 V Z V Zener Voltage 1) Supply + Zener Current I Page 14 CCZ 0 20 ma 2) Beware of P max Drain Source Voltage V DS 600 V Avalanche Current I AC I csthmax A t = 100 ns Voltage at FB V FB V Junction emperature j C Storage emperature stg hermal Resistance R thsa 90 K/W P-DIP-8-6 System-Air 125 P-DSO ) 2) Be aware that V CC capacitor is discharged before IC is plugged into the application board. Power dissipation should be observed. 3.2 Operating Range Parameter Symbol Limit Values Unit Remarks min. max. Supply Voltage V CC V CCH V Z V Junction emperature j C Data Sheet

14 Electrical Characteristics 3.3 Supply Section -25 C < j < 120 C, V CC = 15 V Parameter Symbol Limit Values Unit est Conditions min. typ. max. Quiescent Current I CCL µa Supply Current Active I CCHA ma DA 16831/2/G DA 16833/G DA V CC urn-on hreshold V CCH V V CC urn-off hreshold V CCL V CC urn-on/off Hysteresis V CCHY 3 V CC Zener Clamp V Z Controller hermal Shutdown jsd C DA 16831/2/3/G/4 hermal Hysteresis jhy Oscillator Section -25 C < j < 120 C, V CC = 15 V Parameter Symbol Limit Values Unit est Conditions min. typ. max. Accuracy f khz emperature Coefficient K f 1000 ppm/ C Data Sheet

15 Electrical Characteristics 3.5 PWM Section Parameter Symbol Limit Values Unit est Conditions min. typ. max. Duty Cycle D ransimpedance 1) V FB / I Drain Z PWM 4 2 V/A DA 16831/G DA 16832/G 1.3 DA 16833/G/4 OP Gain Bandwidth 2) Bw 2 MHz OP Phase Margin 2) Phi m 70 Degree V FB Operating Range min. Level V FBmin V for D = 0 V FB Operating Range max. Level V FBmax I cs = 0.95 I csth Feedback Resistance R FB KΩ emperature Coefficient R FB R FBK 600 ppm/ C Internal Reference Voltage V refint V emperature Coefficient V refint V reftk 0.2 mv/ C 1) 2) For discontinuous mode the V FB is described by: I V FB Z PK PWM t t on 1 1 e 1 = e on 1 = 850 ns; 2 = 200 ns Guaranteed by design -t on -t on 2 Data Sheet

16 Electrical Characteristics 3.6 Output Section Parameter Symbol Limit Values Unit est Conditions min. typ. max. Drain Source Breakdown Voltage A = 25 C V (BR)DSS 600 V Drain Source On-Resistance R DSon 3.5 Ω DA 16831/2/G A = 25 C 1 DA 16833/G 0.5 DA Drain Source On-Resistance R DSon 9 Ω DA 16831/2/G -25 < A < 120 C 2.7 DA 16833/G 1.6 DA Zero Gate Voltage Drain Current I DSS µa V GS = 0 Output Capacitance C DA16833 OSS 25 pf t DR = 100 ns Avalanche Current I AR I csthma A I source Current Limit hreshold I csth A DA 16831/G DA 16832/G DA 16833/G DA ime Constant I csth t csth 300 ns Rise ime t rise 70 Fall ime t fall 50 x Data Sheet

17 Electrical Characteristics Quiescent Current versus emperature Supply Current Active versus emperature I CCL 30 µa 25 AED02767 I CCH 6 ma DA AED DA 16831/ C C 125 urn On/Off Supply Voltage versus emperature urn On/Off Hysteresis V CC 12.5 V V CCH AED02769 V CCHY 2.9 V 2.85 AED V CCL C C 125 Data Sheet

18 Electrical Characteristics V CC Zener Clamp Switching Frequency versus emperature V Z 19 V AED02771 f 110 khz AED C C 125 Maximum Duty Cycle versus emperature DA 16831/2/3/G/4 Operational Amplifier Phase and Amplitude versus Frequency 50 % AED02773 A 40 db AED Grad ϕ Duty-cycle A /db ϕ /Grad C khz f Data Sheet

19 Electrical Characteristics Feedback Voltage Operating Range versus emperature Feedback Voltage versus Feedback Current V FB 5 V 4 For I CS = 0.95 I CSH AED02775 V FB 6 V 5 AED For D = emp = 130 emp = C ma 1.5 I FB R DSon versus emperature DA Output Capacitance C OSS versus V DS R DSON 8 Ω 7 6 AED C OSS pf AED DA DA C V 100 V DS Data Sheet

20 Electrical Characteristics I source Current Limit hreshold I csth versus emperature Normalized Overcurrent Shutdown versus Drain Current Slope I CSH 3.5 A 3 DA AED02779 I I Drain CSH 6 5 AED DA DA DA DA DA C A /µs 10 di dt Data Sheet

21 Application Circuit 4 Application Circuit VCC DA CoolMOS Drain AC VAC FB PWM Controller GND AES02994 Figure 5 DA 16832/2G/3G: 4 Active Pins, Version without Soft Start Data Sheet

22 Package Outlines 5 Package Outlines P-DIP-8-6 (Plastic Dual In-line Package) 1.7 MAX MIN MAX ± ± x 3.25 MIN. 8.9 ± ) ± Index Marking 1) ±0.25 1) Does not include plastic or metal protrusion of 0.25 max. per side GPD05583 Data Sheet

23 Package Outlines P-DSO (Plastic Dual Small Outline) 0.1 MIN. (1.5) 1.75 MAX ) -0.2 ±0.08 x MAX M C 0.1 A C 14x 6 ± ± ) Index Marking 1) 1 7 A Does not include plastic or metal protrusion of 0.15 max. per side GPS09033 You can find all of our packages, sorts of packing and others in our Infineon Internet Page Products : Dimensions in mm Data Sheet

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