5-A H-Bridge for DC-Motor Applications TLE

Transcription

1 5-A H-Bridge for DC-Motor Applications TE Overview. Features Delivers up to 5 A continuous 6 A peak current Optimized for DC motor management applications Operates at supply voltages up to 4 V Very low R DS ON ; typ. 2 C per switch Output full short circuit protected Overtemperature protection with hysteresis and diagnosis Short circuit and open load diagnosis with open drain error flag Undervoltage lockout CMOS/TT compatible inputs with hysteresis No crossover current Internal freewheeling diodes Wide temperature range; 4 C < T j < 5 C P-TO22-7- P-DSO-2-2 Type Ordering Code Package TE Q67-A9283 P-TO22-7- TE 525-2GP Q676-A9237 P-DSO-2-2 P-TO TE 525-2G Q676-A9325 P-TO TE 525-2S Q67-A9324 P-TO Description P-TO The TE is an integrated power H-bridge with DMOS output stages for driving DC-Motors. The part is built using the Infineon multi-technology process SPT which allows bipolar and CMOS control circuitry plus DMOS power devices to exist on the same monolithic structure. Operation modes forward (cw), reverse (ccw), brake and high impedance are invoked from just two control pins with TT/CMOS compatible levels. The combination of an extremely low R DS ON and the use of a power IC package with low thermal resistance and high thermal capacity helps to minimize system power dissipation. A blocking capacitor at the supply voltage is the only external circuitry due to the integrated freewheeling diodes. Data Sheet 2-6-9

2 TE Overview.2 Pin Configuration (top view) TE TE 525-2GP N.C. N.C. N.C. N.C. Q EF IN N.C. N.C. N.C. N.C. Q2 N.C. IN2 AEP68 TE 525-2S OUT EF IN IN2 OUT2 AEP99 TE 525-2G OUT EF IN IN2 OUT2 V S AEP99 OUT EF IN IN2 OUT2 AEP253 Figure Data Sheet

3 TE Pin Definitions and Functions Pin No. P-TO22 Pin No. P-DSO Symbol Function Overview 7 OUT Output of Channel ; Short-circuit protected; integrated freewheeling diodes for inductive loads. 2 8 EF Error Flag; TT/CMOS compatible output for error detection; (open drain) 3 9 IN Control Input ; TT/CMOS compatible 4,,, 2 Ground; internally connected to tab 5 2 IN2 Control Input 2; TT/CMOS compatible 6 6, 5 Supply Voltage; block to 7 4 OUT2 Output of Channel 2; Short-circuit protected; integrated freewheeling diodes for inductive loads. 2, 3, 4, 5, 6, 7, 8, 9 N.C. Not Connected Data Sheet

4 TE Overview.4 Functional Block Diagram EF 2 Error Flag 6 Diagnosis and Protection Circuit IN 3 IN 2 OUT 2 OUT IN2 5 7 OUT2 Diagnosis and Protection Circuit 2 4 AEB2394 Figure 2 Block Diagram Data Sheet

5 TE Overview.5 Circuit Description Input Circuit The control inputs consist of TT/CMOS-compatible schmitt-triggers with hysteresis. Buffer amplifiers are driven by this stages. Output Stages The output stages consist of a DMOS H-bridge. Integrated circuits protect the outputs against short-circuit to ground and to the supply voltage. Positive and negative voltage spikes, which occur when switching inductive loads, are limited by integrated freewheeling diodes. A monitoring circuit for each output transistor detects whether the particular transitor is active and in this case prevents the corresponding source transistor (sink transistor) from conducting in sink operation (source operation). Therefore no crossover currents can occur..6 Input ogic Truth Table Functional Truth Table IN IN2 OUT OUT2 Comments H Motor turns clockwise H H Motor turns counterclockwise H Brake; both low side transistors turned-on H H Open circuit detection Notes for Output Stage Symbol Value ow side transistor is turned-on High side transistor is turned-off H High side transistor is turned-on ow side transistor is turned-off High side transistor is turned-off ow side transistor is turned-off Data Sheet

6 TE Overview.7 Monitoring Functions Undervoltage lockout (UVO): When reaches the switch on voltage ON the IC becomes active with a hysteresis. All output transistors are switched off if the supply voltage drops below the switch off value OFF..8 Protective Function Various errors like short-circuit to +, ground or across the load are detected. All faults result in turn-off of the output stages after a delay of 5 µs and setting of the error flag EF to ground. Changing the inputs resets the error flag. a. Output Shorted to Ground Detection If a high side transistor is switched on and its output is shorted to ground, the output current is internally limited. After a delay of 5 µs all outputs will be switched-off and the error flag is set. b. Output Shorted to + Detection If a low side transistor is switched on and its output is shorted to the supply voltage, the output current is internally limited. After a delay of 5 µs all outputs will be switched-off and the error flag is set. c. Overload Detection An internal circuit detects if the current through the low side transistor exceeds the trippoint I SD. In this case all outputs are turned off after 5 µs and the error flag is set. d. Overtemperature Protection At a junction temperature higher than 5 C the thermal shutdown turns-off, all four output stages commonly and the error flag is set with a delay. e. Open oad Detection The output Q has a kω pull-up resistor and the output Q2 has a kω pull-down resistor. If E and E2 are high, all output power stages are turned-off. In case of no load between Q and Q2 the output voltage Q is and Q2 is ground. This state will be detected by two comparators and an error flag will be set after a delay time of 5 µs. Changing the inputs resets the error flip flop. Data Sheet

7 TE Overview V EH = Pull UP k Ω EF Pull Down k Ω = V E & 5 µ s RS FF AES2395 Figure 3 Simplified Schematic for Open oad Detection Data Sheet

8 TE Diagnosis 2 Diagnosis Various errors as listed in the table Diagnosis are detected. Short circuits and overload result in turning off the output stages after a delay t dsd and setting the error flag simultaneously [EF = ]. Changing the inputs to a state where the fault is not detectable resets the error flag (input toggling) with the exception of short circuit from OUT to OUT2 (load short circuit). Flag IN IN2 OUT OUT2 EF Remarks Nr. Open circuit between OUT and OUT2 Short circuit from OUT to OUT2 Short circuit from OUT to Short circuit from OUT2 to Short circuit from OUT to Short circuit from OUT2 to Overtemperature or undervoltage H /2 /2 H H H H H /2 /2 H H H H IN: = ogic OW = ogic HIGH OUT: = Output in tristate condition = /2 due to internal Pull-up/down resistors EF: = No error = Error = Output in sink condition H = Output in source condition Data Sheet

9 TE Electrical Characteristics 3 Electrical Characteristics 3. Absolute Maximum Ratings 4 C < T j < 5 C Parameter Symbol imit Values Unit Remarks min. max. Voltages Supply voltage.3 4 V 4 V t <.5 s; I S > 5 A ogic input voltage V IN, V V < < 4 V Diagnostics output voltage V EF.3 7 V Currents of DMOS-Transistors and Freewheeling Diodes Output current (cont.) I OUT, A Output current (peak) I OUT, A t p < ms; T =s Output current (peak) I OUT, 2 A t p < 5 µs; T =s; internally limitted; see overcurrent Temperatures Junction temperature T j 4 5 C Storage temperature T stg 5 5 C Thermal Resistances Junction case R thjc 3 K/W P-TO22-7-/2, P-TO Junction ambient R thja 65 K/W P-TO22-7-/2 75 K/W P-TO Junction case R thjc 5 K/W P-DSO-2-2 Junction ambient R thja 5 K/W P-DSO-2-2 Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Data Sheet

10 TE Electrical Characteristics 3.2 Operating Range Parameter Symbol imit Values Unit Remarks min. max. Supply voltage V UV ON 4 V After rising above V UV ON Supply voltage increasing.3 V UV ON V Outputs in tristate Supply voltage decreasing.3 V UV OFF V condition ogic input voltage V IN, V Junction temperature T j 4 5 C 3.3 Electrical Characteristics 6 V < < 8 V; IN = IN2 = HIGH I OUT, 2 = A (No load); 4 C < T j < 5 C; unless otherwise specified Parameter Symbol imit Values Unit Test Condition min. typ. max. Current Consumption Quiescent current I S ma IN = IN2 = OW; = 3.2 V Under Voltage ockout UV-Switch-ON voltage V UV ON V increasing UV-Switch-OFF voltage V UV OFF V decreasing UV-ON/OFF-Hysteresis V UV HY.2.6 V V UV ON V UV OFF Data Sheet 2-6-9

11 TE Electrical Characteristics 3.3 Electrical Characteristics (cont d) 6 V < < 8 V; IN = IN2 = HIGH I OUT, 2 = A (No load); 4 C < T j < 5 C; unless otherwise specified Parameter Symbol imit Values Unit Test Condition min. typ. max. Outputs OUT, 2 Static Drain-Source-On Resistance Source I OUT = 3A Sink I OUT = 3 A R DS ON H mω 6V < < 8 V T j = 25 C 5 mω 6V < < 8 V 35 5 mω ON < 6V T j = 25 C 8 mω ON < 6V R DS ON mω 6V < < 8 V T j = 25 C 5 mω 6V < < 8 V 4 6 mω ON < 6V T j = 25 C mω ON < 6V Note: Values of R DS ON for ON < 6 V are guaranteed by design. Overcurrent Source shutdown trippoint I SDH A T j = 4 C 8 A T j = 25 C 6 A T j = 5 C Sink shutdown trippoint I SD A T j = 4 C 8 A T j = 25 C 6 A T j = 5 C Shutdown delay time t dsd µs Data Sheet 2-6-9

12 TE Electrical Characteristics 3.3 Electrical Characteristics (cont d) 6 V < < 8 V; IN = IN2 = HIGH I OUT, 2 = A (No load); 4 C < T j < 5 C; unless otherwise specified Parameter Symbol imit Values Unit Test Condition min. typ. max. Short Circuit Current imitation Source current I SCH 2 A t < t dsd Sink current I SC 5 A t < t dsd Open Circuit Pull up resistor R UP 5 2 kω Pull down resistor R DOWN 5 2 kω Switching threshold H V EH V Switching threshold V EH V Detection delay time t dsd µs Output Delay Times (Device Active for t > ms) Source ON t donh 2 µs I OUT = 3A resistive load Sink ON t don 2 µs I OUT = 3 A resistive load Source OFF t doffh 2 5 µs I OUT = 3A resistive load Sink OFF t doff 2 5 µs I OUT = 3 A resistive load Data Sheet

13 TE Electrical Characteristics 3.3 Electrical Characteristics (cont d) 6 V < < 8 V; IN = IN2 = HIGH I OUT, 2 = A (No load); 4 C < T j < 5 C; unless otherwise specified Parameter Symbol imit Values Unit Test Condition min. typ. max. Output Switching Times (Device Active for t > ms) Source ON t ON H 5 3 µs I OUT = 3A resistive load Sink ON t ON 5 µs I OUT = 3 A resistive load Source OFF t OFF H 2 5 µs I OUT = 3A resistive load Sink OFF t OFF 2 5 µs I OUT = 3 A resistive load Clamp Diodes Forward Voltage High-side V FH.5 V I F = 3 A ow-side V F..5 V I F = 3 A eakage Current Source I KH 5 µa OUT = Sink I K 5 µa OUT2 = ogic Control Inputs IN, 2 H-input voltage threshold V INH V -input voltage V IN.7.2 V Hysteresis of input voltage V INHY V H-input current I INH 2 2 µa V IN = 5 V -input current I IN 4 µa V IN = V Data Sheet

14 TE Electrical Characteristics 3.3 Electrical Characteristics (cont d) 6 V < < 8 V; IN = IN2 = HIGH I OUT, 2 = A (No load); 4 C < T j < 5 C; unless otherwise specified Parameter Symbol imit Values Unit Test Condition min. typ. max. Error Flag Output EF ow output voltage V EF.25.5 V I EF = 3 ma eakage current I EF µa V EF = 7 V Thermal Shutdown Thermal shutdown junction T jsd C temperature Thermal switch-on junction T jso 2 7 C temperature Temperature hysteresis T 3 K Shutdown delay time t dsd µs Note: Values of thermal shutdown are guaranteed by design. Data Sheet

15 TE Electrical Characteristics Ι FU ; Ι S V EF V IN 47 µ F 47 nf 6 63 V Ι EF 2 V EF S Ι OUT OUT Ι IN 3 IN TE R oad Ι Ι 7 OUT2 IN2 5 OUT2 IN2 V IN2 V 4 OUT V OUT2 Ι F AES2396 Figure 4 Test Circuit Overcurrent Short Circuit Open Circuit I OUT I SD I SC I OC Data Sheet

16 <_ TE Electrical Characteristics V IN V 5 5% t r = t f ns t A 3 Ι OUT Source Ι OUT Sink A 3 t donh t t ONH t OFF 8% 5% 2% doff t doffh 8% 8% 5% 5% 2% 2% t OFFH t ON 8% 5% 2% t don t t AET994 Figure 5 Switching Time Definitions + 5 V + µp 2 kω EF IN IN2 6 OUT TE OUT2 7 µ F nf M Ι N = 3 A Ι B = 6 A 4 AES2397 Figure 6 Application Circuit Data Sheet

17 TE Electrical Characteristics IN, 2 Ι SCH Ι SDH Ι OUT, 2 V OUT, 2 R Short x Ι SCH t dsd V F EF AED997 Figure 7 Timing Diagram for Output Shorted to Ground IN, 2 Ι SC Ι OUT, 2 Ι SD V OUT, 2 R Short x Ι SC V FU t dsd EF AED998 Figure 8 Timing Diagram for Output Shorted to Data Sheet

18 TE Electrical Characteristics Diagrams Quiescent Current I S (Active) versus Junction Temperature T j Ι 7 ma S 6 AED2398 Static Drain-Source ON-Resistance versus Junction Temperature T j AED R ON ow Side Transistor 4 = 8 V High Side Transistor 2 = 6 V C 5 T j -5 5 C 5 T j Input Switching Thresholds V INH, versus Junction Temperature T j 3. AED24 Clamp Diode Forward Voltage V F versus Junction Temperature T j.3 AED24 V INH, 2.5 V INH V F.2 High Side Transistor V IN. ow Side Transistor C 5 T j C 5 T j Data Sheet

19 TE Electrical Characteristics Overcurrent Shutdown Threshold I SD versus Junction Temperature T j 2 AED242 Switching Threshold V EH, V EH versus Junction Temperature T j 3. AED244 Ι SD V EH,V E ow Side Transistor High Side Transistor 2.4 V EH V E C 5 T j Error-Flag Saturation Output Voltage V EF versus Junction Temperature T j.6 V EF.5 AED C 5 T j C 5 T j Data Sheet

20 TE Package Outlines 4 Package Outlines P-TO22-7- (Plastic Transistor Single Outline Package) ± ±.2 A ).27 ±. 7 ± ±.3 ) ± ±.2.6 ± ±.3.2 ±.3 7x.6 ±. C 3.7±.3.5 ± x M A C 8.4 ± ±.4 ) Typical Metal surface min. X=7.25, Y=2.3 All metal surfaces tin plated, except area of cut. GPT983 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. Dimensions in mm Data Sheet

21 TE Package Outlines P-DSO-2-2 (Plastic Dual Small Outline Package) ± M A 2x ± max ±.5 ) ±.3 B Heatsink.95 ±.5 5 ±3.25 M B Index Marking x 45 ) 5.9 ±.5 A ) Does not include plastic or metal protrusion of.5 max. per side GPS579 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. SMD = Surface Mounted Device Dimensions in mm Data Sheet

22 TE Package Outlines P-TO Option E38 (Plastic Transistor Single Outline Package) (5) ±.2 ±.3 ± ) 7.55 ) A.27 ±. B ±.5 2.7± x.6±. 6x M A B 8 max..5 ±.. B ) Typical Metal surface min. X=7.25, Y=6.9 All metal surfaces tin plated, except area of cut. GPT94 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. SMD = Surface Mounted Device Dimensions in mm Data Sheet

23 TE Package Outlines P-TO (Plastic Transistor Single Outline Package) ± ±.2 A B ).27 ±. 7± ±.3 ) ± ±.2 C ±.5 3 ± ±. 7x.6 ± x M A B C ) Typical Metal surface min. X=7.25, Y=2.3 All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. Dimensions in mm Data Sheet