HAL , 508, 509, HAL , 523 Hall Effect Sensor Family MICRONAS. Edition Feb. 14, E DS

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1 MICRONAS HAL1...6, 8, 9, HAL , 23 Hall Effect Sensor Family Edition Feb. 14, E DS MICRONAS

2 HALxx Contents Page Section Title 3 1. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability 2. Functional Description 6 3. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview Type Descriptions HAL HAL HAL HAL HAL HAL HAL HAL HAL HAL HAL HAL HAL23 4. Application Notes 4.1. Ambient Temperature 4.2. Extended Operating Conditions 4.3. Start-up Behavior 4.4. EMC Data Sheet History 2 Micronas

3 HALxx Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction The HALxx family consists of different Hall switches produced in CMOS technology. All sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The sensors of this family differ in the switching behavior and the switching points. The active offset compensation leads to constant magnetic characteristics over supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects Family Overview The types differ according to the magnetic flux density values for the magnetic switching points, the temperature behavior of the magnetic switching points, and the mode of switching. Type Switching Behavior Sensitivity 1 bipolar very high 14 2 latching high 16 3 latching medium 18 4 unipolar medium 2 latching low 22 6 unipolar high 24 8 unipolar medium 26 9 unipolar low 28 see Page The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from 4 C up to 1 C. All sensors are available in a SMD-package (SOT-89B) and in a leaded version (TO-92UA). 16 unipolar with inverted output 17 unipolar with inverted output 18 unipolar with inverted output high 3 medium 32 medium Features: switching offset compensation at typically 62 khz operates from 3.8 V to 24 V supply voltage overvoltage protection at all pins reverse-voltage protection at -pin magnetic characteristics are robust against mechanical stress effects short-circuit protected open-drain output by thermal shut down operates with static magnetic fields and dynamic magnetic fields up to 1 khz constant switching points over a wide supply voltage range the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics ideal sensor for applications in extreme automotive and industrial environments EMC corresponding to DIN unipolar with inverted output (north polarity) high unipolar low 38 Latching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. Bipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. Micronas 3

4 HALxx Unipolar Switching Sensors: The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output: The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Unipolar Switching Sensors with Inverted Output Sensitive to North Pole: The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range A K E HAL1 1A 1K 1E HAL2 2A 2K 2E HAL3 3A 3K 3E HAL4 4A 4K 4E HAL A K E HAL6 6A 6K 6E HAL8 8A 8K 8E HAL9 9A 9K 9E HAL16 16A 16K 16E HAL17 17A 17K 17E HAL18 18A 18K 18E HAL19 19A 19K 19E HAL23 23A 23K 23E for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts Operating Junction Temperature Range A: T J = 4 C to +17 C K: T J = 4 C to +14 C E: T J = 4 C to +1 C The Hall sensors from Micronas are specified to the chip temperature (junction temperature T J ). The relationship between ambient temperature (T A ) and junction temperature is explained in section.1. on page Hall Sensor Package Codes HALXXXPA-T Example: HALUA-E Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-92UA Type: xx Type: Package: TO-92UA Temperature Range: T J = 4 C to +1 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: Ordering Codes for Hall Sensors Solderability all packages: according to IEC During soldering reflow processing and manual reworking, a component body temperature of 26 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 4 C and 9% relative humidity. 1 OUT Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used 2 GND Fig. 1 1: Pin configuration 4 Micronas

5 HALxx 2. Functional Description HALxx The HAL xx sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. 1 GND 2 Reverse Voltage & Overvoltage Protection Hall Plate Temperature Dependent Bias Switch Hysteresis Control Comparator Clock Fig. 2 1: HALxx block diagram Short Circuit & Overvoltage Protection Output OUT 3 Magnetic offset caused by mechanical stress is compensated for by using the switching offset compensation technique. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/f osc. f osc B t Shunt protection devices clamp voltage peaks at the Output-Pin and -Pin together with external series resistors. Reverse current is limited at the -Pin by an internal series resistor up to 1 V. No external reverse protection diode is needed at the -Pin for reverse voltages ranging from V to 1 V. V OUT V OH V OL t t I DD 1/f osc = 16 µs t f t Fig. 2 2: Timing diagram Micronas

6 HALxx 3. Specifications 3.1. Outline Dimensions sensitive area ±.1 sensitive area y y 3. ±.1 4 ±.2 min top view ±.2 3.1± min branded side SPGS22--A3/2E.6 ±.4 branded side Fig. 3 1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately.3 g Dimensions in mm SPGS72-9-A/2E 4 Fig. 3 2: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately.12 g Dimensions in mm Dimensions of Sensitive Area.2 mm x.12 mm Note: For all package diagrams, a mechanical tolerance of ±. mm applies to all dimensions where no tolerance is explicitly given Positions of Sensitive Areas SOT-89B TO-92UA An improvement of the TO-92UA package with reduced tolerances will be introduced end of 21. x center of the package center of the package y.9 mm nominal 1. mm nominal 6 Micronas

7 HALxx 3.4. Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit Supply Voltage ) V V P Test Voltage for Supply ) V I DD Reverse Supply Current 1 1) ma I DDZ Supply Current through Protection Device 1 2 3) 2 3) ma V O Output Voltage ) V I O Continuous Output On Current 3 1) ma I Omax Peak Output On Current 3 2 3) ma I OZ Output Current through Protection Device 3 2 3) 2 3) ma T S Storage Temperature Range ) 6 1 C T J Junction Temperature Range C 17 4) 1) as long as T J max is not exceeded 2) with a 22 Ω series resistance at pin 1 corresponding to the test circuit on page 4 3) t<2 ms 4) t<1h ) Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 4 C and 9% relative humidity. Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions/Characteristics of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.. Recommended Operating Conditions Symbol Parameter Pin No. Min. Max. Unit Supply Voltage V I O Continuous Output On Current 3 2 ma V O Output Voltage (output switched off) 3 24 V Micronas 7

8 HALxx 3.6. Electrical Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for T J = 2 C and = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions I DD Supply Current ma T J = 2 C I DD Z Supply Current over Temperature Range Overvoltage Protection at Supply ma V I DD = 2 ma, T J = 2 C, t = 2 ms V OZ Overvoltage Protection at Output V I OH = 2 ma, T J = 2 C, t = 2 ms V OL Output Voltage mv I OL = 2 ma, T J = 2 C V OL Output Voltage over Temperature Range mv I OL = 2 ma I OH Output Leakage Current µa Output switched off, T J = 2 C, V OH = 3.8 to 24 V I OH f osc f osc Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Internal Oscillator Chopper Frequency over Temperature Range 3 1 µa Output switched off, T J 1 C, V OH = 3.8 to 24 V khz T J = 2 C, = 4. V to 24 V khz t en(o) Enable Time of Output after µs = 12 V 1) Setting of t r Output Rise Time ns = 12 V, R L = 82 Ohm, C L = 2 pf t f Output Fall Time 3 4 ns = 12 V, R L = 82 Ohm, C L = 2 pf R thjsb case SOT-89B R thja case TO-92UA Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Soldering Point 1 2 K/W Fiberglass Substrate 3 mm x 1 mm x 1.mm, pad size see Fig K/W 1) B > + 2 or B < 2 for HAL x, B > + 2 or B < 2 for HAL 1x Fig. 3 3: Recommended pad size SOT-89B Dimensions in mm 8 Micronas

9 HALxx 3.7. Magnetic Characteristics Overview at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Sensor Parameter On point Off point Hysteresis B HYS Unit Switching type T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. HAL 1 4 C bipolar 2 C C HAL 2 4 C latching 2 C C HAL 3 4 C latching 2 C C HAL 4 4 C unipolar 2 C C HAL 4 C latching 2 C C HAL 6 4 C unipolar 2 C C HAL 8 4 C unipolar 2 C C HAL 9 4 C unipolar 2 C C HAL 16 4 C unipolar 2 C inverted 17 C HAL 17 4 C unipolar 2 C inverted 17 C HAL 18 4 C unipolar 2 C inverted 17 C Note: For detailed descriptions of the individual types, see pages 14 and following. Micronas 9

10 HALxx Magnetic Characteristics Overview, continued Sensor Parameter On point Off point Hysteresis B HYS Unit Switching type T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. HAL 19 4 C unipolar 2 C inverted 17 C HAL 23 4 C unipolar 2 C C Note: For detailed descriptions of the individual types, see pages 14 and following. ma 2 HAL xx ma. HAL xx 2 4. I DD TA = 4 C 1 T A = 2 C 1 T A =17 C V I DD 4. T A = 4 C 3. T A = 2 C T A = 1 C T A = 17 C V Fig. 3 4: Typical supply current Fig. 3 : Typical supply current 1 Micronas

11 HALxx ma HAL xx khz 1 HAL xx 9 I DD 4 f osc 8 3 = 24 V = 12 V 7 6 T A = 2 C T A = 4 C T A = 17 C 2 = 3.8 V C V T A Fig. 3 6: Typical supply current versus ambient temperature Fig. 3 8: Typ. Internal chopper frequency khz 1 HAL xx khz 1 HAL xx 9 9 f osc 8 f osc = 3.8 V 7 6 T A =2 C T A = 4 C = 4. V...24 V T A =17 C C V Fig. 3 7: Typ. internal chopper frequency versus ambient temperature T A Fig. 3 9: Typ. internal chopper frequency Micronas 11

12 HALxx mv 4 HAL xx I O = 2 ma mv 4 HAL xx I O = 2 ma 3 V OL 3 2 T A = 17 C V OL 3 = 3.8 V = 4. V = 24 V 2 T A = 1 C 2 1 T A = 2 C 1 T A = 4 C V C Fig. 3 1: Typical output low voltage T A Fig. 3 12: Typical output low voltage versus ambient temperature mv 6 V OL HAL xx I O = 2 ma T A =17 C T A =1 C T A =2 C A HALxx I OH 1 2 T A =17 C 1 1 T A =1 C 1 T A =1 C T A =2 C T A = 4 C T A = 4 C V V Fig. 3 11: Typical output low voltage V OH Fig. 3 13: Typical output high current versus output voltage 12 Micronas

13 HALxx µa HALxx I OH VOH = 24 V 1 dbµv HAL xx V P = 12 V T A = 2 C Quasi-Peak- Measurement test circuit V OH = 3.8 V 4 3 max. spurious signals C Fig. 3 14: Typical output leakage current versus ambient temperature T A MHz f Fig. 3 16: Typ. spectrum at supply voltage I DD dbµa HAL xx = 12 V T A = 2 C Quasi-Peak- Measurement max. spurious signals MHz f Fig. 3 1: Typ. spectrum of supply current Micronas 13

14 HAL1 4. Type Description 4.1. HAL1 The HAL1 is the most sensitive sensor of this family with bipolar switching behavior (see Fig. 4 1). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output state is not defined for all sensors if the magnetic field is removed again. Some sensors will change the output state and some sensors will not. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: bipolar very high sensitivity typical :. at room temperature typical :.7 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz Applications The HAL1 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, rotating speed measurement, CAM shaft sensors, and magnetic encoders. V O Output Voltage B HYS V OL Fig. 4 1: Definition of magnetic switching points for the HAL1 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset SET Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 14 Micronas

15 HAL1 3 HAL 1 3 HAL 1 max 2 2 max 1 1 typ typ 1 T A = 4 C T A = 2 C 2 T A = 1 C T A = 17 C V 1 = 3.8 V min 2 = 4. V...24 V min C Fig. 4 2: Typ. magnetic switching points T A, T J Fig. 4 4: Magnetic switching points versus temperature 3 HAL 1 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A = 2 C 2 T A = 1 C T A = 17 C V Fig. 4 3: Typ. magnetic switching points Micronas 1

16 HAL HAL2 The HAL2 is the most sensitive latching sensor of this family (see Fig. 4 ). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: latching high sensitivity typical : 2.6 at room temperature typical : 2.6 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Applications The HAL2 is the optimal sensor for all applications with alternating magnetic signals and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, rotating speed measurement, commutation of brushless DC motors, CAM shaft sensors, and magnetic encoders. V O Output Voltage B HYS V OL Fig. 4 : Definition of magnetic switching points for the HAL2 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 16 Micronas

17 HAL2 6 HAL 2 6 HAL max 2 T A = 4 C 2 min typ 2 T A = 2 C T A = 1 C T A = 17 C 2 = 3.8 V = 4. V...24 V max typ 4 4 min V C Fig. 4 6: Typ. magnetic switching points T A, T J Fig. 4 8: Magnetic switching points versus temperature 6 HAL 2 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A =2 C T A =1 C T A =17 C V Fig. 4 7: Typ. magnetic switching points Micronas 17

18 HAL HAL3 The HAL3 is a latching sensor (see Fig. 4 9). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: latching medium sensitivity typical : 7.6 at room temperature typical : 7.6 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Applications The HAL 3 is the optimal sensor for applications with alternating magnetic signals such as: multipole magnet applications, rotating speed measurement, commutation of brushless DC motors, and window lifter. V O Output Voltage B HYS V OL Fig. 4 9: Definition of magnetic switching points for the HAL3 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 18 Micronas

19 HAL3 12 HAL 3 12 HAL 3 max 8 8 typ 4 4 min T A = 4 C T A = 2 C T A = 1 C = 3.8 V = 4. V...24 V T A = 17 C 4 4 max 8 8 typ V min C Fig. 4 1: Typ. magnetic switching points T A, T J Fig. 4 12: Magnetic switching points versus temperature 12 HAL 3 Note: In the diagram Magnetic switching points versus ambient temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A = 2 C T A = 1 C T A = 17 C V Fig. 4 11: Typ. magnetic switching points Micronas 19

20 HAL HAL4 The HAL 4 is a unipolar switching sensor (see Fig. 4 13). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar Applications The HAL 4 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end-point detection, and rotating speed measurement. Output Voltage V O B HYS medium sensitivity typical : 12 at room temperature typical : 7 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k V OL Fig. 4 13: Definition of magnetic switching points for the HAL4 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 2 Micronas

21 HAL4 18 HAL 4 18 HAL max min typ 8 8 max T A = 4 C T A =2 C T A =1 C T A =17 C V 6 typ 4 min 2 = 3.8 V = 4. V...24 V C Fig. 4 14: Typ. magnetic switching points T A, T J Fig. 4 16: Magnetic switching points versus temperature 18 HAL 4 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A =2 C T A = 1 C T A = 17 C V Fig. 4 1: Typ. magnetic switching points Micronas 21

22 HAL 4.. HAL The HAL is a latching sensor (see Fig. 4 17). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Magnetic Features: switching type: latching low sensitivity typical : 13. at room temperature typical : 13. at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Applications The HAL is the optimal sensor for applications with alternating magnetic signals such as: multipole magnet applications, rotating speed measurement, commutation of brushless DC motors, and window lifter. V O Output Voltage B HYS V OL Fig. 4 17: Definition of magnetic switching points for the HAL B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 22 Micronas

23 HAL HAL max min HAL typ T A = 4 C = 3.8 V T A = 2 C T A = 1 C = 4. V...24 V T A = 17 C 1 1 max typ V min C Fig. 4 18: Typ. magnetic switching points T A, T J Fig. 4 2: Magnetic switching points versus temperature HAL Note: In the diagram Magnetic switching points versus ambient temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature. T A = 4 C T A = 2 C T A = 1 C T A = 17 C V Fig. 4 19: Typ. magnetic switching points Micronas 23

24 HAL HAL6 The HAL 6 is the most sensitive unipolar switching sensor of this family (see Fig. 4 21). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HALxx family, the HAL16 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Applications The HAL6 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position such as: applications with large airgap or weak magnets, solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V O Magnetic Features: B HYS switching type: unipolar high sensitivity typical :. at room temperature typical : 3. at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz V OL Fig. 4 21: Definition of magnetic switching points for the HAL6 B typical temperature coefficient of magnetic switching points is 1 ppm/k Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 24 Micronas

25 HAL6 8 HAL 6 8 HAL max max typ 4 4 min T A = 4 C T A =2 C T A =1 C T A =17 C min = 3.8 V = 4. V...24 V typ V C Fig. 4 22: Typ. magnetic switching points T A, T J Fig. 4 24: Magnetic switching points versus temperature 8 HAL 6 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A = 2 C T A = 1 C T A = 17 C V Fig. 4 23: Typ. magnetic switching points Micronas 2

26 HAL HAL8 The HAL 8 is a unipolar switching sensor (see Fig. 4 2). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In the HALxx family, the HAL18 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Applications The HAL 8 is the optimal sensor for applications with one magnetic polarity such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V O B HYS Magnetic Features: switching type: unipolar medium sensitivity typical : 18 at room temperature typical : 16 at room temperature V OL Fig. 4 2: Definition of magnetic switching points for the HAL8 B operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 26 Micronas

27 HAL8 2 HAL 8 2 HAL max max 1 1 T A = 4 C T A =2 C T A =1 C T A =17 C 1 1 typ typ min min = 3.8 V = 4. V...24 V V C Fig. 4 26: Typ. magnetic switching points T A, T J Fig. 4 28: Magnetic switching points versus temperature 2 HAL 8 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A = 2 C T A = 1 C T A = 17 C V Fig. 4 27: Typ. magnetic switching points Micronas 27

28 HAL HAL9 The HAL 9 is a unipolar switching sensor (see Fig. 4 29). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar low sensitivity typical : 26.8 at room temperature typical : 23.2 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 3 ppm/k Applications The HAL 9 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V O B HYS V OL Fig. 4 29: Definition of magnetic switching points for the HAL9 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 28 Micronas

29 HAL9 3 HAL 9 3 HAL 9 max 3 3 max typ 2 2 typ 2 2 min min T A = 4 C T A =2 C T A =1 C T A =17 C 1 = 3.8 V = 4. V...24 V V C Fig. 4 3: Typ. magnetic switching points T A, T J Fig. 4 32: Magnetic switching points versus temperature 3 HAL 9 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A =2 C T A =1 C T A =17 C V Fig. 4 31: Typ. magnetic switching points Micronas 29

30 HAL HAL16 The HAL 16 is the most sensitive unipolar switching sensor with an inverted output of this family (see Fig. 4 33). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Applications The HAL16 is the optimal sensor for all applications with one magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: applications with large airgap or weak magnets, solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. In the HALxx family, the HAL6 is a sensor with the same magnetic characteristics but with a normal output characteristic. Output Voltage V O Magnetic Features: switching type: unipolar inverted high sensitivity typical : 3. at room temperature typical :. at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k V OL B HYS Fig. 4 33: Definition of magnetic switching points for the HAL16 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 3 Micronas

31 HAL16 8 HAL 16 8 HAL max 6 6 max typ 4 4 min T A = 4 C T A =2 C T A =1 C T A =17 C min = 3.8 V = 4. V...24 V typ V C Fig. 4 34: Typ. magnetic switching points T A, T J Fig. 4 36: Magnetic switching points versus temperature 8 HAL 16 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A = 2 C T A = 1 C T A = 17 C V Fig. 4 3: Typ. magnetic switching points Micronas 31

32 HAL HAL 17 The HAL 17 is a unipolar switching sensor with inverted output (see Fig. 4 37). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar inverted medium sensitivity typical on point is 16.2 at room temperature typical off point is 18.3 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 17 ppm/k Applications The HAL 17 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V OL B HYS Fig. 4 37: Definition of magnetic switching points for the HAL17 V O B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 32 Micronas

33 HAL17 2 HAL 17 2 HAL max max 1 1 typ typ 1 T A = 4 C T A =2 C T A =1 C T A =17 C 1 min = 3.8 V = 4. V...24 V min V C Fig. 4 38: Typ. magnetic switching points T A, T J Fig. 4 4: Magnetic switching points versus temperature 2 HAL 17 Note: In the diagram Magnetic switching points versus ambient temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A =2 C T A =1 C T A =17 C V Fig. 4 39: Typ. magnetic switching points Micronas 33

34 HAL HAL 18 The HAL 18 is a unipolar switching sensor with inverted output (see Fig. 4 41). The output turns high with the magnetic south pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Applications The HAL 18 is the optimal sensor for applications with one magnetic polarity where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. In the HALxx family, the HAL8 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: Output Voltage B HYS V O switching type: unipolar inverted medium sensitivity typical : 16 at room temperature typical : 18 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k V OL Fig. 4 41: Definition of magnetic switching points for the HAL18 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 34 Micronas

35 HAL18 2 HAL 18 2 HAL max max 1 1 T A = 4 C T A =2 C T A =1 C T A =17 C 1 1 min = 3.8 V = 4. V...24 V typ typ min V C Fig. 4 42: Typ. magnetic switching points T A, T J Fig. 4 44: Magnetic switching points versus temperature 2 HAL 18 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A = 2 C T A = 1 C T A = 17 C V Fig. 4 43: Typ. magnetic switching points Micronas 3

36 HAL HAL 19 The HAL19 is a very sensitive unipolar switching sensor with an inverted output sensitive only to the magnetic north polarity. (see Fig. 4 4). The output turns high with the magnetic north pole on the branded side of the package and turns low if the magnetic field is removed. The sensor does not respond to the magnetic south pole on the branded side, the output remains low. For correct functioning in the application, the sensor requires only the magnetic north pole on the branded side of the package. Magnetic Features: switching type: unipolar inverted, north sensitive high sensitivity typical : 3. at room temperature typical :. at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz typical temperature coefficient of magnetic switching points is 1 ppm/k Applications The HAL19 is the optimal sensor for all applications with the north magnetic polarity and weak magnetic amplitude at the sensor position where an inverted output signal is required such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. V O B HYS Output Voltage V OL Fig. 4 4: Definition of magnetic switching points for the HAL19 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 36 Micronas

37 HAL19 HAL 19 T A = 4 C = 3.8 V HAL T A = 2 C T A = 1 C T A = 17 C 1 2 = 4. V...24 V max 3 3 typ 4 4 max min 6 6 typ 7 7 min V C Fig. 4 46: Typ. magnetic switching points T A, T J Fig. 4 48: Magnetic switching points versus temperature 1 2 HAL 19 T A = 4 C T A = 2 C T A = 1 C T A = 17 C Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature V Fig. 4 47: Typ. magnetic switching points Micronas 37

38 HAL HAL 23 The HAL 23 is the least sensitive unipolar switching sensor of this family (see Fig. 4 49). The output turns low with the magnetic south pole on the branded side of the package and turns high if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: switching type: unipolar low sensitivity typical : 34. at room temperature typical : 24 at room temperature operates with static magnetic fields and dynamic magnetic fields up to 1 khz Applications The HAL 23 is the optimal sensor for applications with one magnetic polarity and strong magnetic fields at the sensor position such as: solid state switches, contactless solution to replace micro switches, position and end point detection, and rotating speed measurement. Output Voltage V O B HYS V OL Fig. 4 49: Definition of magnetic switching points for the HAL23 B Magnetic Characteristics at T J = 4 C to +17 C, = 3.8 V to 24 V, Typical Characteristics for = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter On point Off point Hysteresis B HYS Magnetic Offset Unit T J Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. 4 C C C C C The hysteresis is the difference between the switching points B HYS = The magnetic offset is the mean value of the switching points SET = ( + ) / 2 38 Micronas

39 HAL23 4 HAL 23 4 max HAL typ 3 3 max 2 2 min typ T A = 4 C T A = 2 C T A = 1 C T A = 17 C 1 1 min = 3.8 V = 4. V...24 V V C Fig. 4 : Typ. magnetic switching points T A, T J Fig. 4 2: Magnetic switching points versus temperature 4 HAL 23 Note: In the diagram Magnetic switching points versus temperature the curves for min, max, min, and max refer to junction temperature, whereas typical curves refer to ambient temperature T A = 4 C T A = 2 C T A = 1 C T A = 17 C V Fig. 4 1: Typ. magnetic switching points Micronas 39

40 HALxx. Application Notes.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature T J ) is higher than the temperature outside the package (ambient temperature T A ). T J = T A + T At static conditions, the following equation is valid: T = I DD * * R th For typical values, use the typical parameters. For worst case calculation, use the max. parameters for I DD and R th, and the max. value for from the application. For all sensors, the junction temperature range T J is specified. The maximum ambient temperature T Amax can be calculated as: T Amax = T Jmax T.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figures 1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards DIN Note: The international standard ISO 7637 is similar to the used product standard DIN Please contact Micronas for the detailed investigation reports with the EMC and ESD results. R V 22 Ω.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). V EMC V P 4.7 nf 1 OUT 3 R L 1.2 kω 2 pf Supply Voltage Below 3.8 V 2 GND Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Fig. 1: Test circuit for EMC investigations Note: The functionality of the sensor below 3.8 V has not been tested. For special test conditions, please contact Micronas..3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. The parameter t en(o) is specified in the Electrical Characteristics (see page 8). During the initialization time, the output state is not defined and the output can toggle. After t en(o), the output will be low if the applied magnetic field B is above. The output will be high if B is below. In case of sensors with an inverted switching behavior (HAL HAL19), the output state will be high if B > and low if B <. For magnetic fields between and, the output state of the HAL sensor after applying will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above max, respectively, below min. 4 Micronas

HAL , 508, 509, HAL , 523 Hall Effect Sensor Family

HAL , 508, 509, HAL , 523 Hall Effect Sensor Family Hardware Documentation Data Sheet HAL 1...6, 8, 9, HAL 16...19, 23 Hall Effect Sensor Family Edition Nov. 27, 23 621-48-4DS HALxx DATA SHEET Contents Page Section Title 3 1. Introduction 3 1.1. Features