Kai Ni 5626 Stevenson Center, Vanderbilt University, Nashville, TN, (615)
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1 EDUCATION Kai Ni 5626 Stevenson Center, Vanderbilt University, Nashville, TN, (615) Vanderbilt University Ph.D. in Electrical Engineering 07/ /2016 (expected) Dissertation: Radiation effects in III-V MOSFETs for logic applications Advisors: Prof. Ronald Schrimpf and Prof. Daniel Fleetwood GPA: 3.9/4.0 Vanderbilt University 08/ /2013 M. S. in Electrical Engineering (Physics Minor) Thesis: A fully embedded integrated silicon-on-insulator total-ionizing-dose monitor Advisor: Prof. Ronald Schrimpf GPA: 4.0/4.0 University of Science and Technology of China (USTC) 08/ /2011 B. S. in Electrical Engineering Area: RF/Microwave engineering GPA: 90.1/100 Rank: 4/153 RESEARCH INTERESTS Solid state physics and devices Analog/RF/microwave IC design, VLSI, antenna design Reliability and radiation effects in microelectronics Quantum computation and information RESEARCH EXPERIENCE Research Assistant, Radiation Effect & Reliability Group, 01/2012 present Vanderbilt University, United States Solid state physics and devices Physics and reliability of III-V MOSFETs for logic applications Bias temperature stability and total-ionizing-dose effect for InGaAs quantum-well MOSFETs Broadbeam heavy ion irradiation and femtosecond two-photon-absorption (TPA) laser irradiation in InGaAs quantum-well MOSFETs Broadbeam heavy ion irradiation and TPA laser irradiation in GaAs surface-channel MOSFETs Charge collection study on InGaAs FinFET devices through TPA laser irradiation and heavy ion irradiation ZnO nanowire Resistive RAM (RRAM) Fabrication of the ZnO nanowire RRAM Characterization and analysis of the memory devices Carbon-based nanoelectronics Operation principles of the diamond-based vacuum field emission devices Modeling of nanodiamond field emission diode TCAD simulation of semiconductor devices
2 Calibration of III-V material properties, calibration of III-V MOSFETs with experimental data, and simulations of charge collection process Reverse leakage current simulations in SiC power schotty diode Single event effects simulations in 20 nm 3D planar nmosfets and 16 nm FinFET Monte Carlo simulation of semiconductor devices Transport simulation of InGaAs quantum-well MOSFETs Simulation of impact ionization induced breakdown of a diode SOI mixed-signal IC design measuring dose for space application Current controlled oscillator design with high linearity and wide input range using double relaxation capacitor topology Wide bandwidth voltage comparator design Bandgap voltage reference design Whole chip layout design Research intern, Interuniversity MicroElectronics Center (IMEC), Belgium 07/ /2015 TCAD simulation on electrical effects of a single extended defect in transistors Calibration of the dislocation parameters with experimental data and development of TCAD simulation setup for dislocation Simulation of dislocation in planar and FinFET devices Research intern, Microsemi Corporation, CA, United States 08/ /2014 Single event upset (SEU) simualtion Characterization of the FPGA SRAM cell SEU sensitivity by mixed mode TCAD simulation SEU error cross-section calculation and error rate calculation SONOS nonvolatile memory Characterization of the SONOS nonvolatile memory device X-ray irradiation of the SONOS device, characterization, and analysis Research Assistant, Applied Electromagnetics Group, USTC, China 06/ /2011 MMIC design Coupled microstrip-line based bandpass filter design Four-terminal power divider design Power amplifier design Antenna design and measurement Investigation and application of fractal geometry into the Yagi-Uda antenna Measurement and characterization of horn antenna parameters Computational electromagnetics Programming based on moment of method (MoM) to solve the current distrubtion and impedance matrix of the Koch fractal antenna and the Sierpinski fractal patch antenna TECHNICAL SKILLS Programming: C (since 2007), Python (since 2011), MATLAB (since 2007), Assembly Language (since 2007), VHDL (since 2008)
3 CAD Tool: HFSS (since 2010), ADS (since 2010), IE3D (since 2010), Cadence (since 2011) TCAD simulation: Sentaurus TCAD (since 2011), Silvaco TCAD (since 2011), DAMOCLES (since 2013) Scanning Electron Microscope (since 2013), Electron Beam Lithography (since 2013) Characterization: Semiconductor Parameter Analyzer (since 2012), RF/Microwave Measurement by Vector Network Analyzer (since 2015), Impedance Analyzer (since 2013), High Speed Oscilloscope (since 2013), Low Frequency Noise Measurement (since 2013), Femtosecond Laser Testing (since 2013) PUBLICATIONS 1. K. Ni, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, J. Lin, and J. A. del Alamo, Gate bias and geometry dependence of total-ionizing-dose effects in InGaAs quantum-well MOSFETs, IEEE, Trans. Nucl. Sci., (pending submission) 2. K. Ni, G. Eneman, E. Simoen, A. Mocuta, N. Collaert, A. Thean, R. D. Schrimpf, R. A. Reed, and D. M. Fleetwood, Electrical effects of a single extended defect in MOSFETs, (submitted to IEEE Trans. Electron Devices) 3. K. Ni, E. X. Zhang, I. K. Samsel, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, A. L. Sternberg, M. W. McCurdy, S. Ren, T. P. Ma, L. Dong, J. Y. Zhang, and P. D. Ye, Charge collection mechanisms in GaAs MOSFETs, IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp , Dec K. Ni, E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T. W. Kim, J. Lin, and J. A. del Alamo, Single event transient response of InGaAs MOSFETs, IEEE, Trans. Nucl. Sci., Vol. 61, pp , Dec H. Zhang, H. Jiang, T. R. Assis, S. Ball, K. Ni, J. S. Kauppila, R. D. Schrimpf, L. W. Massengill, B. L. Bhuva, B. Narasimham, S. Hatami, A. Anvar, A. Lin, and J. K. Wang, Temperature dependence of soft-error-rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies, IEEE International Reliability Physics Symposium (submitted) 6. Y. S. Puzyrev, X. Shen, K. Ni, C. X. Zhang, J. Hachtel, B. Choi, M. F. Chisholm, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides, Memristive switching of self-assembled ZnO nanorods, J. Appl. Phys. (pending submission) 7. S. Ren, H. Wu, R. Jiang, M. Bhuiyan, K. Ni, J. Chen, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye and T. P. Ma, Total ionizing dose effects in ultra-thin body Ge on insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel, IEEE, Trans. Nucl. Sci., (pending submission) 8. S. Ren, M. Bhuiyan, J. Zhang, M. Si, R. Jiang, K. Ni, X. Wan, S. Chang, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye, and T. P. Ma, Total ionizing dose effects in GaAs MOSFETs with La based epitaxial gate dielectrics, IEEE, Trans. Nucl. Sci., (pending submission) 9. C. Claeys, E. Simoen, G. Eneman, K. Ni, A. Hikavyy, R. Loo, S. Gupta, C. Merckling, A. Alian, and M. Caymax, Review-device assessment of electrically active defects in high-mobility materials, ECS J. Solid State Sci. Technol. Vol. 5, pp , T. R. Assis, K. Ni, J. S. Kauppila, B. L. Bhuva, R. D. Schrimpf, L. W. Massengill, S. J. Wen, R. Wong, and C. Slayman, Estimation of single-event induced collected charge for multiple transistors using analytical expressions, IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp , Dec. 2015
4 11. S. Ren, M. W. Si, K. Ni, X. Wan, J. Chen, S. Chang, X. Sun, E. X. Zhang, R. A. Reed, D. M. Fleetwood, P. D. Ye, S. Cui, and T. P. Ma, Total ionizing dose effect in extremely scaled ultra-thin channel nanowire gate all around InGaAs MOSFETs, IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp , Dec I. K. Samsel, E. X. Zhang, A. L. Sternberg, K. Ni, R. A. Reed, D. M. Fleetwood, M. L. Alles, R. D. Schrimpf, D. Linten, J. Mitard, L. Witters, and N. Collaert, Charge collection mechanisms of Gechannel bulk pmosfets, IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp , Dec B. Narasimham, S. Hatami, A. Anvar, D. M. Harris, A. Lin, J. K. Wang, I. Chatterjee, K. Ni, B. L. Bhuva, R. D. Schrimpf, R. A. Reed, and M. W. McCurdy, Bias dependence of single-event upsets in 16nm FinFET D-flip-flops, IEEE, Trans. Nucl. Sci., Vol. 62, no. 6, pp , Dec E. X. Zhang, I. K. Samsel, N. C. Hooten, W. G. Bennett, E. D. Funkhouser, K. Ni, D. R. Ball, M. W. McCurdy, D. M. Fleetwood, R. A. Reed, M. L. Alles, R. D. Schrimpf, D. Linten, and J. Mitard, Heavy-Ion and Laser Induced Charge Collection in SiGe Channel pmosfets, IEEE, Trans. Nucl. Sci., Vol. 61, pp , Dec PRESENTATIONS 1. K. Ni, G. Eneman, E. Simoen, A. Mocuta, N. Collaert, A. Thean, R. D. Schrimpf, R. A. Reed, and D. M. Fleetwood, Electrical effects of a single extended defect in MOSFETs, IMEC Program Technical Week, Leuven, Belgium, Oct K. Ni, E. X. Zhang, I. K. Samsel, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, A. L. Sternberg, M. W. McCurdy, S. Ren, T. P. Ma, L. Dong, J. Y. Zhang, and P. D. Ye, Charge collection mechanisms in GaAs MOSFETs, IEEE Nuclear Science and Space Radiation Effects Conference, Boston, MA, July K. Ni, E. X. Zhang, N. C. Hooten, W. G. Bennett, M. W. McCurdy, A. L. Sternberg, R. D. Schrimpf, R. A. Reed, D. M. Fleetwood, M. L. Alles, T. W. Kim, J. Lin, and J. A. del Alamo, Single event transient response of InGaAs MOSFETs, IEEE Nuclear Science and Space Radiation Effects Conference, Paris, France, July I. K. Samsel, E. X. Zhang, K. Ni, R. A. Reed, R. D. Schrimpf, D. M. Fleetwood, R. A. Weller, M. W. McCurdy, and M. L. Alles, Physical mechanisms for radiation-induced effects in non-silicon channel CMOS devices, GOMACTech, St. Louis, Mo, March 2015 (best poster award) TEACHING EXPERIENCE Department of Electrical Engineering and Computer Science, Vanderbilt Teaching assistant on electromagnetics Fall 2011 Guest lecture on solid state devices (graduate level) Spring 2016 PROFESSIONAL AFFILIATIONS Membership IEEE Nuclear and Plasma Science Society (NPSS) IEEE Electron Devices Society HONORS AND AWARDS Best poster award in the 40 th GOMACTech conference 2015 Vanderbilt tuition scholarship and research assistantship 2012-present Vanderbilt graduate student travel grant
5 USTC excellent graduated students scholarship 2011 USTC outstanding student scholarship 2010 Chinese academy of science institute of microsystem 2009 and information technology scholarship USTC outstanding student scholarship 2008 USTC outstanding student scholarship for freshmen 2007 REFERENCES Ronald D. Schrimpf Daniel M. Fleetwood Sokrates Pantelides Professor of Electrical Engineering Professor of Electrical Engineering Professor of Physics Vanderbilt University Vanderbilt University Vanderbilt University 5635 Stevenson Center 254 Featheringill Hall 5635 Stevenson Center Nashville, TN Nashville, TN Nashville, TN My advisor and Ph.D. committee My co-advisor and Ph.D. committee My Ph.D. committee and chair. taught me Condensed Matter Physics course
Acknowledgments: This work was supported by Air Force HiREV program and the DTRA Basic Research Program.
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