EDC + Analog Electronics

Size: px
Start display at page:

Download "EDC + Analog Electronics"

Transcription

1 Engineering Services Personality test Practice Sheet Electronics & Telecommunication. EDC + Analog Electronics Panel Members (last year ESE-2012 interview ) : Prof. David Q. What is difference between Analog and digital signals? Ans. Analog signals can assume any value in a given range but digital can assume some fixed quantized signals in a given range. Analog signals cannot be easily processed by computers and algorithms unlike digital ones. Besides, analog signals are more memory occupying than digital. Digital signals are regarded as more environmentally friendly. Q. What is a semiconductor? Ans. The material whose conductivity lies in the middle of those metals and insulators is called semiconductors. Since they have bipolar currents and their conductivity can be modulated, they offer many advantages? Q. What is difference between Electrical and electronics engineering? Ans. In electrical engineering, we are mostly concerned with large magnitude unipolar currents and their power and transmission. In electronics, we are mostly have semiconductor which have bipolar currents of range of milliamperes. Q. What is difference between Si and Ge? What will you prefer? Ans. Both are semiconductors. But Si has lesser reverse saturation current so better thermal stability. Besides, Si is more readily available and can handle large currents with efficient power delivery. But Ge is more suited for high frequency applications. Also, Ge is better conductor, has lower energy gap. I think Si has more advantages, so I will use Si mostly. Q. What is Hall Effect? Ans. When a current carrying specimen is placed in a transverse magnetic field, a perpendicular field is developed inside it (or voltage). Developed by a scientist named Hall, this method is used to measure mobility of majority carriers. The magnitude of Hall voltage is stronger in semi conductors than in metals. Q. How to measure mobility of minority carriers?

2 Ans. Haynes- Shockley experiment. Q. How to you relate mobility with applied electric field? Ans. Mobility is drift velocity per applied electric field. In general, the mobility initially remains constant with the field applied, then decreases sub-linearly and finally linear decrement is observed. Q. How does conductivity of an extrinsic semi conductor varies with temperature? Ans. Initially, it increases linearly till room temperature because of either donor level ionization or bonding. By 300K this process outputs a maximum conductivity. Then it shows non linear decrement till Curie temperature at which the concentration of majority and minority become equal and we say that the purpose of doping has been lost. AT this point extrinsic becomes intrinsic and thereafter, the conductivity increases with temperature as it should in an intrinsic semi conductor. Q. What is Fermi level? Ans. The energy level whose probability of occupancy is ½ at a given temperature. Also it can defined as the maximum energy possessed by an electron at 0K. Q. Draw Fermi levels for different semi conductors. Ans. In intrinsic, it lies exactly at the middle of the forbidden energy gap. In n-type, the Fermi level is above this middle value and as doping is increased it moves upward towards conduction band but with it shifts below towards the middle value. In p-type, it lies below this middle value and with doping it moves downwards towards valence band but with temperature it moves upwards towards the middle. Q. What is diode? Can we use Ohm s law on it? Ans. Diode is a two terminal unidirectional noon-linear semiconductor device. We cannot use Ohm s law directly on a diode because its voltage and current are not directly proportional rather in a transcendental way. But we can develop linear models of a diode then use Ohm s law on them to obtain approximate results. Q. Can we measure cut-in voltage of a diode? What does it depend upon? Ans. We cannot measure but calculate cut-in voltage. Because to measure we will connect voltmeter across the terminals of the diode and this will give zero reading because the diode cut-in voltage will be exactly compensated by the metal-semiconductor contacts potential at the connection of voltmeter.

3 To calculate we use the formula V = kt/q ln(n a.n D/n i 2). So it depends upon doping levels and temperature. Q. Name some applications of diodes. Ans. Rectifiers, clippers, clampers, Voltage regulators, LEDs, Photo diodes and opto coupling. Q. What is difference between LED and LCD? What kind of TV do you use? Ans. Light emitting diodes are semiconductor devices and have more lifetime. Liquid crystal devices are based upon pneumatic crystals which require back lighting. Though LCD s have lesser power consumption but lesser life time. Nowadays, the two technologies have been fused. LCD displays use LED backlighting. Q. What breakdown of a diode? What are its types and differences between them? Ans. Breakdown of a diode refers to the case when applied reverse bias is large enough to result in a huge surge in the number of carriers causing large reverse current to flow. It can occur in two ways: Avalanche and Zener mechanism. While Avalanche is because of already unbounded electrons colliding with lattice and generating more carriers, in short impact ionization, in Zener the cause is development of a high electric field in the depletion layer which liberates carriers by breaking bonds, in short field emission. So Avalanche is more common in lowly doped diodes and Zener in highly doped ones. Also, with increase in temperature the voltage required for Avalanche increases but for Zener decreases. Q. What are junction capacitances of a diode? Ans. Diffusion capacitance dominates during forward bias and increases linearly with forward current. It occurs due to storage of majority carriers near the depletion layer. Transition capacitance dominates during reverse bias and varies with applied reverse bias as C proportional to V -1/2. It occurs due to storage of minority carriers near depletion layer. Both have values in picofarads and limit the high frequency response of the diode. Q. What is dc and ac model of a diode? Ans. DC model in forward bias has a dc voltage source (equal to cut-in voltage) in series with a small resistance. In reverse bias, we have a huge resistor. The ac model has only a dynamic resistor whose value depends upon forward dc current and temperature. Q. What is FET? Types and uses? Ans. Field effect transistors use an external electric field to modulate flow of carriers in the conducting channel. Two types: JFET and MOSFET. Both have different properties. Mostly they are

4 used as linear amplifier for analog signals. Also in digital electronics, MOSFETs are widely used to design circuitry. CMOS is the most dominant logic family currently. Q. What is difference between FET and BJT? Ans. FETs have smaller transconductance than BJT so usually they have smaller gains. Also FETs have lack of minority carries, so relatively noise free and better switches than BJT. But BJT are more suited for analog signals in amplifiers. Q. What is depletion and enhancement MOSFET? Ans. In depletion mode, MOSFET has a pre-existing channel. Reverse voltage must be applied to nullify this channel. In enhancement mode, MOSFET has no pre-existing channel so an external voltage must be applied to create the channel first and then use the device. Q. What is channel width modulation? Ans. In JFET, with applied reverse bias at the GATE SOURCE terminal, the width of the conduction channel can be altered. With increasing reverse bias, the channel becomes thinner at the drain end, so a wedge shaped. Q. What are the regions of operation of a MOSFET with changing gate bias? Ans. If we assume n-channel enhancement mode MOSFET, then initially no channel exists. So the region just below MOS layers is populated by holes, called accumulation. As gate bias is increased, the electric field develops which pushes the holes downwards and this region is depleted of the mobile carriers and has only uncovered charges, called depletion region. As more bias is applied, the electrons from the substrate will be pulled upwards and more charges will be uncovered. When the concentration reaches equal to that of holes in the bulk, we have inversion region. Now the device is on and ready to use. Q. What is difference between NMOS and PMOS? Ans. NMOS has p-type substrate with electrons as charge carries in the channel. Reverse is the case for PMOS. Both can be either depletion or enhancement mode. But NMOS occupies lesser area, has better mobility or speed and inexpensive. So PMOS is outdated. Q. What is CMOS? Ans. Complementary mosfet has both PMOS and CMOS on the same substrate. It is dominant MOS technology because it allows large scale integration. Also, power dissipation is low, high fanout and small area are some of its advantages. Q. Why in a CMOS inverter we connect PMOS near +V DD and NMOS near ground? What if we interchange them?

5 Ans. PMOS passes logic 1 without attenuation and NMOS passes logic 0 without attenuation of their threshold voltages. If we interchange them, the system is no longer inverter but becomes a buffer which passes the input to the output with attenuation equal to their threshold voltages. Q. What is saturation mode of a FET? How to find whether in saturation or not? Where it works as amplifier? Ans. With a fixed V GS, if we increase V DS the current first increases linearly then levels off at a value of the drain voltage. Thus, initially it was in linear region then in saturation region. To find saturation region or not, we measure the drain to gate voltage and compare with the threshold voltage. It works as an amplifier in saturation region. Q. Which device is said to have pentode characteristics with triode operation? Ans. FET Q. What is ac model of FET? Ans. Dependent current source in parallel with a large output resistance. Q. When was BJT developed? Why is transistor called a transistor? Ans. In late 94 s at Bell Laboratories by Bardeen, Shockley and Brittian. As explained by BJT s inventors, transistor means transfer+resistor. Q. What are operation regions of a BJT? Ans. When the input current is small enough to not bias the base emitter junction, we have cutoff region. When this current increases, we have linear region. But when collector current becomes saturated, we have saturation region. Q. In reverse active region, what are biases at the two junctions? Ans. Emitter junction is reverse and collector has forward. Q. Name some uses of BJT. Ans. Amplifiers, oscillators, digital circuits like TTL logic family. Q. What is overdrive factor? Ans. Ratio of common emitter gains of the active region to that of the saturation region. Q. A BJT behaves as a.. source. Ans. Current controlled current source.

6 Q. What is an operational amplifier? Ans. It is a multi stage, direct coupled high gain amplifier which is used to implement a variety of mathematical functions. It is non linear in open loop but linear in closed loop. Q. An op amp is source. Ans. Voltage controlled voltage. Q. What is difference between feedback amplifiers and oscillators? Ans. Feedback amps use negative feedback but oscillators use positive feedback. Feedback amplifiers produce ac output which can be either voltage or current. Oscillators produce sinusoidal output ithout any ac input. Q. What is difference between oscillators and multi vibrators? Ans. Oscillators produce sinusoidal output but multivibrators can produce sinusoidal, sawtooth, triangular or square waveforms with control over their duty cycles. Q. What is Schmitt trigger? Does it generate waveforms? Ans. It is basically regenerative comparator which uses a high gain op amp to convert ac inout to square wave output. It does not generate waveforms but only converts to square wave. Q. What is CMRR? Should it be high? Ans. Common mode rejection ratio is the ratio of differential to common mode gain of a differential amplifier. It should be as large as possible so that the output has lesser amount of common mode voltage. Q. What is Slew Rate? Ans. The maximum rate of change of the output signal with time. It should be as large as possible. But if the output changes faster than the mentioned slew rate, distortions will be seen. Q. name some uses of op amps. Ans. Adder, Subtractor, integrator, differentiator, log and anti log amplifiers, Multivibrators, timers.

7 SIGNALS & SYSTEMS Q. What is a signal? Ans. Any naturally or artificially occurring phenomenon which has information associated with it can be called as signal. Information can be measures in terms of the signal power, energy or probability of its occurrence. Ex: Average rainfall, oscillations of a pendulum. Q. Why do we need Fourier transform? Ans. Every device or system is frequency selective. That is it passes different frequencies with varying gains and phase shifts. So we need to analyze frequency characteristics of a signal, hence Fourier series or transform. Q. What is difference between Laplace and Fourier transform? Ans. Both are used for frequency domain analysis. But Laplace transform is more versatile as it considers damping also. S= SIGMA + J.OMEGA So, Fourier transform is same as Laplace when evaluated along the imaginary axis. Q. What is CAUSAL system? Ans. Those systems where the output depends only upon the present or past inputs but not on the future. Mathematically, speaking h(t) = 0 for t<0. Thus, output starts only at or after the input has been applied. Physically, causal systems can be realized. Q. What is energy spectral density? Ans. The distribution of energy of a signal with respect to its frequency spectrum. Q. Is Dirac function an energy or power signal? Ans. In continuous time, it is neither as its energy is infinite but power is zero. In discrete domain, it is energy signal. Q. What is parameter of measurement for an impulse input, step input and ramp input? Ans. Area, Step magnitude and slope respectively. Q. Is a stable system always causal or vice versa. Tell the answer in terms of Region of convergence properties. Ans. Not necessarily. Causal systems have rightwards ROC in Laplace or outwards ROC in z transform. Stable systems must have ROC including imaginary axis in Laplace domain or unit circle in Z transform.

8 Q. What is difference between unilateral and bilateral Laplace transform? Ans. In Bilateral Laplace transform, the integration used to evaluate the function has limits from infinity to +infinity but in unilateral we have limit from zero- to +infinity. zero is used to include impulse functions and its derivatives occurring at the origin. Also, bilateral transform is not unique expression wise so we need to associate the ROC with it but unilateral Laplace is always unique. So need to associate ROC. Q. What is initial value and final value theorems? Any precautions while using these theorems? Ans. Both are used on unilateral Laplace only. Initial value is used to find the starting value of a function and final value to find the end value. Expressions... Initial value can be used only when degree of numerator is less than degree of denominator. Final value can be used only when all the poles lie in left half except a first order pole at the origin itself. Q. What is DFT? Ans. It is a modified version of DTFT used with algorithms on a computer. We calculate 2 n point DFT using algorithms like FFT. Q. Why is convolution used to find output? Ans. LTI systems have the property that output = input * impulse response and this can be shown mathematically. Q. What is auto-correlation? Ans. F(t) *F(-t) gives auto correlation which is a measure and expression of total power of a signal. It also measures the similarity of a signal with shifted version of itself. The Fourier transform of auto correlation gives energy/power spectral density. Q. Tell some properties of power/energy spectral density. Ans. It depicts the frequency distribution of power/energy. Real, even and positive function of frequency. Its integral with frequency gives total power/energy as the case may be. Q. What is convolution of an even function and an odd function? What is differentiation of an odd function? ANS. ODD, EVEN. Q. what is odd half wave symmetry?

9 Ans. if by shifting the signal by half its time period we obtain negative values or mirror image in x- axis, we have an odd half wave symmetry. its Fourier transform will have only odd numbered harmonics but no even numbered harmonics or dc term. Q. what do you understand by control systems? CONTROL SYSTEMS Ans. a system which can be made to produce desired outputs for a given input by varying its parameters is called control systems. Q. Difference open loop and closed loop. Ans. Open loop systems do not have any part of the output sampled and feedback to the input. But the closed loop systems have feedback. This is done to facilitate comparison between the output and input and hence, measure error. Q. What is static and dynamic error coefficients? Ans. Static error coefficients give only the steady state error value but do not give any indication as to how the error varies with the input over a period of time. Thats why we need dynamic error coefiicients by using long division method and then inverse laplace transform. Q. What is difference between absolute stability and relative stability? Ans. Absolute stability gives the stability in terms of location of poles but doesnot tell the degree of stability. But relative stability gives the stability measure in terms of degree of stability. For example, Routh array and root locus will give absolute stability And bode plot will give relative stability. Nyquist plot gives both. Q. What is Gain margin and Phase margin? Ans. Both are used to ascertain the degree of stability. Gain margin is the excess gain that given to the system to make it go the verge of instability. Phase margin is the excess phase that can be given to make the system go to the verge of instability. Mathematically, GM = (expression) PM = (expression) Q. What ig GM = 0 db and if GM = 0? Ans. IF GM = 0 db, system is marginally stable. GM =0 means it can be stable or conditionally stable is also stable.

10 Q. What is difference between transfer function method and state space method? Ans. The overall response of a system is sum of zero input and zero state response. The transfer function considers zero input response as zero but state space considers both as non zero. Transfer function considers initial conditions as zero. Q. What is controllability and observability? Ans. Controllability means the state variables can be altered by changing the input. Observability means the output can be altered by changing any one of the state variables. To check controllability and observability we create their respective matrices and check for a non zero determinant. Expressions for matrices... Q. What is the purpose of drawing root locus? Ans. Root locus gives the idea of variation of closed loop system poles variations with respect to open loop dc gain. Thus, we can choose a particular value of gain to position poles at desired location and hence modulate system properties. Q. What are advantages of using controllers and compensators? Ans. Controllers are used with time domain analysis and are used to alter damping ratio and location of poles. Compensators are used with frequency domain analysis and used to alter the phase characteristics of a system. Q. Name different controllers. Ans. Proportional, Integral, Differential, PI, PD and PID. Q. Why is integrator used in state space but not differentiator? Ans. Integrator is /s so it minimises the magnitude of high frequency noise but differentiator or s will augment the high frequency noise. Q. If in a second order system, damping ratio is changed keeping natural frequency constant, what is the locus? If we reverse the situation, then the locus of the poles will be... Ans. If only damping ratio is varied we will have a circular shape. If only natural frequency is varied we will have a straight line. Q. What is the advantage of using Mason s gain? Ans. It makes signal flow graph which are concise representation of block diagram and hence calculation of transfer function becomes easier. But Mason s gain has some limitations like if the graph determinant becomes 0.

11 DIGITAL ELECTRONICS Q. What is difference between analog and digital signals? Ans. analog signals can have any value in a given range but digital signals take only some fixed values. Also storage of digital data is easier as compared to analog signals. Digital signals can be easily processed by computer as they are quantized. Q. What is hazard? How can it be removed? Ans. Hazards are unwanted logic signals generated during the operation of a digital circuit. They are like transients but not steady state and occur due to timing mismatch or delays. They are of various types like static-0 hazard (in 2 level and-or gates), static-1 hazard(two level or-gates), dynamic hazard (in multilevel combinational circuits) and essential hazards(in sequential circuits). The static and dynamic hazards can be removed by using redundant gates but not the essential hazards. Q. What is a logic family? Ans. A group of similar circuits manufactured by using a specific circuit configuration and with compatible voltage levels which can be used to implement logic functions. Ex: RTL, TTL, ECL, CMOS. Q. Which is fastest logic family and why? What are its voltage levels? Ans. ECL is fastest with delays of 1 ns. Because in ECL the transistor is not allowed to go in saturation region so swing time is reduced but power dissipation is increased. It is a [positive logic family with logic-0 at -1.7V and logic-1 at -0.8V. Q. What are stages of a TTL circuit and what is its basic gate? Ans. Basic gate is NAND gate. TTL has three stages: a) Multi emitter input transistor b) Phase shifter c) Totem Pole output. Q. Comment upon Totem pole. Ans. Totem pole is series connection of a BJT and a diode. It ensures that at one time only one of the two output transistors is ON thus, reducing power dissipation. Also since the transistors are connected in Common collector mode thus, output impedance is small resulting in fast charging times of capacitive loads. The disadvantage of totem pole is that it does not facilitate wired logic. So we have to use open collector modes. Q. What is Schottky TTL?

12 Ans. Schottky diode connected between base and collector of transistors of TTL logic circuits results in Schottky TTL circuit is the fastest in TTL family with delays of 2ns. It doesnot allow saturation of BJTs connected. Q. What is noise margin? Which logic family has highest noise marginans. Ans. Noise margin refers to the maximum acceptable value of dc that can be added despite changing the logic levels at the output of the next digital block. It has two values, each corresponding to one logic level. High threshold logic family which uses zener diodes has highest noise margin. Q. What is fanout? Which has highest fanout? Ans. Fanout refers to the maximum number of similar logic gates that can driven by the output of one such logic circuit. CMOS has highest fanout. Q. Why is multiplexer called universal circuit and not demultiplexer? Ans. Mux has all the basic gates namely NOT, AND and OR. But demultiplexer has only NOT and AND. Q. Make an astable multivibrator using an universal gate. Ans. Odd number of NAND gates cascaded with shorted inputs will achieve this task. Q. Difference between RAM and ROM. Ans. RAM is volatile i.e. in case of interrupted power supply the data is lost. But ROM is non-volatile. So BIOS related information are usually stored in ROM but user stores in RAM. RAM cannot be used to implement Boolean functions but ROM can be. RAM is of two types SRAM (costlier, faster, requires continuous power and no refreshing) and DRAM (made with MOSFET, requires refreshing). ROM can be erased by using ultra-violet rays or electrical signals. Q. What is advantage and disadvantage of karnaugh maps? Ans. K-maps are useful to graphically form a pattern of minterms or maxterms and hence recombine to minimize the expression. They use grey codes or unit distance codes. But they are prone human errors and cannot be programmed into algorithms unlike Quine-McCluskey method. Q. If we use BCD codes to represent numbers from 0 to 99, how many codes are wasted? Ans. We require 8 bits so 2 8 =256 codes are possible. But we will use only 0 to 99 i.e. 100 codes. So, = 156 codes are wasted. Q. In a three input XOR gate, how many input combinations will give a logic1? Ans. 2 3 /2 = 4 combinations will give logic 1 and rest 4 will give logic 0.

13 Q. How many Boolean functions can be formed using 3 variables? Ans. 2 8 = 256 functions will be formed. Q. What is positive logic and negative logic family? ANS. POSITIVE LOGIC HAS HIGHER VOLTAGE FOR LOGIC-1 AND LOWER VOLTAGE FOR LOGIC-0. REVERSE IS THE CASE FOR NEGATIVE LOGIC. Q. DIFFERNCE BETWEEN COMBINATIONAL AND SEQUENTIAL CIRCUITS. ANS. Combinational circuits do not have any feedback unlike sequential. Combinational circuits have output depending upon only present inputs but in sequential circuits outputs depend on present inputs as well as past outputs. Combinational circuits have do not employ clock inputs but sequential circuits may (synchronous) or may not (asynchronous) use clock inputs. Examples of combinational circuits are multiplexers, decoders, etc. And of sequential circuits are latches, flip flops and counters. Q. What is counter and its types and how can they be used? Ans. Counters are basically used to count the clock pulses used in a given time duration. They can be synchronous or asynchronous depending upon how the clock input is derived. Synchronous counters can be designed for any count sequence and are relatively free of decoding errors unlike asynchronous ones which can count only up or down. Synchronous counters are faster also. Counters can be used to pulse width measurement, range measurement, frequency measurement, frequency division, etc... Q. What is racing and race around? Ans. Racing refers to a situation when the propagation delay of one gate determines the output of a circuit from two equally likely possible outcomes. Example is a NAND latch when both the inputs are 1 and previous outputs were also 1. But race around occurs in a level triggered JK latch when both the inputs are 1 and the propagation delay of the circuit is less than pulse width. So to avoid race around the propagation delay should be more than pulse width and less than the clock time period or we can use Master Slave configuration. Q. What is shift register and its uses? Ans. Shift register is used to shift the data from one flip flop to the next at the occurrence of a clock pulse. We use D Flip-Flop. It used to store and shift data. Q. Name the analog to digital converters and arrange them in increasing order of their speed. Which is most accurate?

14 Ans. In the increasing order of their speed: Dual slope, Ramp type integrating, Successive approximation type and Flash converter. The first one is slowest and most accurate. Dear Students, if you have any query / questions, then contact our team for support. Wishing you all the best...

Chapter 1 Semiconductors and the p-n Junction Diode 1

Chapter 1 Semiconductors and the p-n Junction Diode 1 Preface xiv Chapter 1 Semiconductors and the p-n Junction Diode 1 1-1 Semiconductors 2 1-2 Impure Semiconductors 5 1-3 Conduction Processes in Semiconductors 7 1-4 Thep-nJunction 9' 1-5 The Meta1-Semiconductor

More information

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET)

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET) Difference between BJTs and FETs Transistors can be categorized according to their structure, and two of the more commonly known transistor structures, are the BJT and FET. The comparison between BJTs

More information

S.E. Sem. III [ETRX] Control System Engineering SYLLABUS

S.E. Sem. III [ETRX] Control System Engineering SYLLABUS Oral : 25 Marks Control System Engineering 1. Introduction to control system analysis Introduction, examples of control systems, open loop control systems, closed loop control systems, Transfer function.

More information

OBJECTIVE TYPE QUESTIONS

OBJECTIVE TYPE QUESTIONS OBJECTIVE TYPE QUESTIONS Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling.

More information

Veer Narmad South Gujarat University, Surat

Veer Narmad South Gujarat University, Surat Unit I: Passive circuit elements (With effect from June 2017) Syllabus for: F Y B Sc (Electronics) Semester- 1 PAPER I: Basic Electrical Circuits Resistors, resistor types, power ratings, resistor colour

More information

COMBO ONLINE TEST SERIES GATE 2019 SCHEDULE: ELECTRONICS & COMMUNICATION ENGINEERING Syllabus Test Date Test Type [ EB-Engineering Branch ; EM- No. of Engineering Mathematics; GA- General Question Marks

More information

Preface... iii. Chapter 1: Diodes and Circuits... 1

Preface... iii. Chapter 1: Diodes and Circuits... 1 Table of Contents Preface... iii Chapter 1: Diodes and Circuits... 1 1.1 Introduction... 1 1.2 Structure of an Atom... 2 1.3 Classification of Solid Materials on the Basis of Conductivity... 2 1.4 Atomic

More information

Electronics Eingineering

Electronics Eingineering Electronics Eingineering 1. The output of a two-input gate is 0 if and only if its inputs are unequal. It is true for (A) XOR gate (B) NAND gate (C) NOR gate (D) XNOR gate 2. In K-map simplification, a

More information

Linear Algebra, Calculus, Differential Equations and Vector Analysis. Complex Anaysis, Numerical Methods and Probability and Statistics.

Linear Algebra, Calculus, Differential Equations and Vector Analysis. Complex Anaysis, Numerical Methods and Probability and Statistics. Test No Topic code Topic EC-01 GEM (Engineering Mathematics) Topic wise Tests Each test carries 25 marks and 45 minutes duration Test consists of 5 one mark questions and 10 two marks questions Tests will

More information

Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10

Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10 Index A absolute value, 308 additional pole, 271 analog multiplier, 190 B BiCMOS,107 Bode plot, 266 base-emitter voltage, 16, 50 base-emitter voltages, 296 bias current, 111, 124, 133, 137, 166, 185 bipolar

More information

Microelectronic Circuits

Microelectronic Circuits SECOND EDITION ISHBWHBI \ ' -' Microelectronic Circuits Adel S. Sedra University of Toronto Kenneth С Smith University of Toronto HOLT, RINEHART AND WINSTON HOLT, RINEHART AND WINSTON, INC. New York Chicago

More information

UNIT 3: FIELD EFFECT TRANSISTORS

UNIT 3: FIELD EFFECT TRANSISTORS FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are

More information

Gechstudentszone.wordpress.com

Gechstudentszone.wordpress.com UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits

More information

UPSC Electrical Engineering Syllabus

UPSC Electrical Engineering Syllabus UPSC Electrical Engineering Syllabus UPSC Electrical Engineering Syllabus PAPER I 1. Circuit Theory: Circuit components; network graphs; KCL, KVL; circuit analysis methods: nodal analysis, mesh analysis;

More information

ELECTRONICS ADVANCED SUPPLEMENTARY LEVEL

ELECTRONICS ADVANCED SUPPLEMENTARY LEVEL ELECTRONICS ADVANCED SUPPLEMENTARY LEVEL AIMS The general aims of the subject are : 1. to foster an interest in and an enjoyment of electronics as a practical and intellectual discipline; 2. to develop

More information

EE : ELECTRICAL ENGINEERING Module 8 : Analog and Digital Electronics INDEX

EE : ELECTRICAL ENGINEERING Module 8 : Analog and Digital Electronics INDEX Pearl Centre, S.B. Marg, Dadar (W), Mumbai 400 028. Tel. 4232 4232 EE : ELECTRICAL ENGINEERING Module 8 : Analog and Digital Electronics Contents INDEX Sub Topics 1. Characteristics of Diodes, BJT & FET

More information

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and

More information

Introductory Electronics for Scientists and Engineers

Introductory Electronics for Scientists and Engineers Introductory Electronics for Scientists and Engineers Second Edition ROBERT E. SIMPSON University of New Hampshire Allyn and Bacon, Inc. Boston London Sydney Toronto Contents Preface xiü 1 Direct Current

More information

ELECTRONIC CIRCUITS. Time: Three Hours Maximum Marks: 100

ELECTRONIC CIRCUITS. Time: Three Hours Maximum Marks: 100 EC 40 MODEL TEST PAPER - 1 ELECTRONIC CIRCUITS Time: Three Hours Maximum Marks: 100 Answer five questions, taking ANY TWO from Group A, any two from Group B and all from Group C. All parts of a question

More information

1 Signals and systems, A. V. Oppenhaim, A. S. Willsky, Prentice Hall, 2 nd edition, FUNDAMENTALS. Electrical Engineering. 2.

1 Signals and systems, A. V. Oppenhaim, A. S. Willsky, Prentice Hall, 2 nd edition, FUNDAMENTALS. Electrical Engineering. 2. 1 Signals and systems, A. V. Oppenhaim, A. S. Willsky, Prentice Hall, 2 nd edition, 1996. FUNDAMENTALS Electrical Engineering 2.Processing - Analog data An analog signal is a signal that varies continuously.

More information

R.B.V.R.R. WOMEN S COLLEGE (AUTONOMOUS) Narayanaguda, Hyderabad. ELECTRONIC PRINCIPLES AND APPLICATIONS

R.B.V.R.R. WOMEN S COLLEGE (AUTONOMOUS) Narayanaguda, Hyderabad. ELECTRONIC PRINCIPLES AND APPLICATIONS R.B.V.R.R. WOMEN S COLLEGE (AUTONOMOUS) Narayanaguda, Hyderabad. DEPARTMENT OF PHYSICS QUESTION BANK FOR SEMESTER V PHYSICS PAPER VI (A) ELECTRONIC PRINCIPLES AND APPLICATIONS UNIT I: SEMICONDUCTOR DEVICES

More information

Electronic Circuits EE359A

Electronic Circuits EE359A Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 1 Memory and Advanced Digital Circuits - 2 Chapter 11 2 Figure 11.1 (a) Basic latch. (b) The latch with the feedback loop opened.

More information

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor transistors for logic and memory Reading: Kasap 6.6-6.8 Vacuum tube diodes 2 Thermionic emission from cathode Electrons collected

More information

R & D Electronics DIGITAL IC TRAINER. Model : DE-150. Feature: Object: Specification:

R & D Electronics DIGITAL IC TRAINER. Model : DE-150. Feature: Object: Specification: DIGITAL IC TRAINER Model : DE-150 Object: To Study the Operation of Digital Logic ICs TTL and CMOS. To Study the All Gates, Flip-Flops, Counters etc. To Study the both the basic and advance digital electronics

More information

Physical electronics, various electronics devices, ICs form the core of Electronics and Telecommunication branch. This part includes

Physical electronics, various electronics devices, ICs form the core of Electronics and Telecommunication branch. This part includes Paper-1 Syllabus for Electronics & Telecommunication Engineering: This part is for both objective and conventional type papers: 1) Materials and Components Materials and Components are the vertebral column

More information

Unit III FET and its Applications. 2 Marks Questions and Answers

Unit III FET and its Applications. 2 Marks Questions and Answers Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric

More information

ELECTRONICS WITH DISCRETE COMPONENTS

ELECTRONICS WITH DISCRETE COMPONENTS ELECTRONICS WITH DISCRETE COMPONENTS Enrique J. Galvez Department of Physics and Astronomy Colgate University WILEY John Wiley & Sons, Inc. ^ CONTENTS Preface vii 1 The Basics 1 1.1 Foreword: Welcome to

More information

EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current.

EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current. EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS 1. Define diffusion current. A movement of charge carriers due to the concentration gradient in a semiconductor is called process

More information

UNIT-I CIRCUIT CONFIGURATION FOR LINEAR

UNIT-I CIRCUIT CONFIGURATION FOR LINEAR UNIT-I CIRCUIT CONFIGURATION FOR LINEAR ICs 2 marks questions 1.Mention the advantages of integrated circuits. *Miniaturisation and hence increased equipment density. *Cost reduction due to batch processing.

More information

Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

More information

Field Effect Transistors (npn)

Field Effect Transistors (npn) Field Effect Transistors (npn) gate drain source FET 3 terminal device channel e - current from source to drain controlled by the electric field generated by the gate base collector emitter BJT 3 terminal

More information

EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1

EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- , Raj Kamal, 1 EDC UNIT IV- Transistor and FET Characteristics Lesson-9: JFET and Construction of JFET 2008 EDC Lesson 9- ", Raj Kamal, 1 1. Transistor 2008 EDC Lesson 9- ", Raj Kamal, 2 Transistor Definition The transferred-resistance

More information

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,

More information

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34 CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials

More information

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field

More information

Power Semiconductor Devices

Power Semiconductor Devices TRADEMARK OF INNOVATION Power Semiconductor Devices Introduction This technical article is dedicated to the review of the following power electronics devices which act as solid-state switches in the circuits.

More information

multivibrator; Introduction to silicon-controlled rectifiers (SCRs).

multivibrator; Introduction to silicon-controlled rectifiers (SCRs). Appendix The experiments of which details are given in this book are based largely on a set of 'modules' specially designed by Dr. K.J. Close. These 'modules' are now made and marketed by Irwin-Desman

More information

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination

Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Current Transport: Diffusion, Thermionic Emission & Tunneling For Diffusion current, the depletion layer is

More information

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

TAMIL NADU PUBLIC SERVICE COMMISSION. Post of Principal / Assistant Director (Training) Included in the Tamil Nadu Employment and Training Service

TAMIL NADU PUBLIC SERVICE COMMISSION. Post of Principal / Assistant Director (Training) Included in the Tamil Nadu Employment and Training Service Code No.207 TAMIL NADU PUBLIC SERVICE COMMISSION Post of Principal / Assistant Director (Training) Included in the Tamil Nadu Employment and Training Service Electronics and Instrumentation Engineering

More information

Associate In Applied Science In Electronics Engineering Technology Expiration Date:

Associate In Applied Science In Electronics Engineering Technology Expiration Date: PROGRESS RECORD Study your lessons in the order listed below. Associate In Applied Science In Electronics Engineering Technology Expiration Date: 1 2330A Current and Voltage 2 2330B Controlling Current

More information

EE70 - Intro. Electronics

EE70 - Intro. Electronics EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π

More information

Number of Lessons:155 #14B (P) Electronics Technology with Digital and Microprocessor Laboratory Completion Time: 42 months

Number of Lessons:155 #14B (P) Electronics Technology with Digital and Microprocessor Laboratory Completion Time: 42 months PROGRESS RECORD Study your lessons in the order listed below. Number of Lessons:155 #14B (P) Electronics Technology with Digital and Microprocessor Laboratory Completion Time: 42 months 1 2330A Current

More information

IES Digital Mock Test

IES Digital Mock Test . The circuit given below work as IES Digital Mock Test - 4 Logic A B C x y z (a) Binary to Gray code converter (c) Binary to ECESS- converter (b) Gray code to Binary converter (d) ECESS- To Gray code

More information

Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology

Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm

More information

TECHNO INDIA BATANAGAR (DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING) QUESTION BANK- 2018

TECHNO INDIA BATANAGAR (DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING) QUESTION BANK- 2018 TECHNO INDIA BATANAGAR (DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING) QUESTION BANK- 2018 Paper Setter Detail Name Designation Mobile No. E-mail ID Raina Modak Assistant Professor 6290025725 raina.modak@tib.edu.in

More information

Analog Electronic Circuits

Analog Electronic Circuits Analog Electronic Circuits Chapter 1: Semiconductor Diodes Objectives: To become familiar with the working principles of semiconductor diode To become familiar with the design and analysis of diode circuits

More information

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,

More information

Syllabus for: Electronics for F Y B Sc (Electronics) Semester- 1 (With effect from June 2014) PAPER I: Basic Electrical Circuits

Syllabus for: Electronics for F Y B Sc (Electronics) Semester- 1 (With effect from June 2014) PAPER I: Basic Electrical Circuits Unit I: Passive Devices Syllabus for: Electronics for F Y B Sc (Electronics) Semester- 1 (With effect from June 2014) PAPER I: Basic Electrical Circuits Resistors, Fixed resistors & variable resistors,

More information

UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency

UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency Jamie E. Reinhold December 15, 2011 Abstract The design, simulation and layout of a UMAINE ECE Morse code Read Only Memory and transmitter

More information

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad 1 P a g e INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad - 500 043 ELECTRONICS AND COMMUNICATION ENGINEERING TUTORIAL QUESTION BANK Name : INTEGRATED CIRCUITS APPLICATIONS Code

More information

ELECTRONIC DEVICES AND CIRCUITS

ELECTRONIC DEVICES AND CIRCUITS ELECTRONIC DEVICES AND CIRCUITS 1. At room temperature the current in an intrinsic semiconductor is due to A. holes B. electrons C. ions D. holes and electrons 2. Work function is the maximum energy required

More information

* GATE 2017 ONLINE TEST SERIES

* GATE 2017 ONLINE TEST SERIES * GATE 2017 ONLINE TEST SERIES Complete with best... Our proficient faculties have done extensive research to prepare and shape these test series. An opportunity for students to come across their strengths

More information

ELECTRICAL ENGINEERING (CODE NO. 10) PAPER - I

ELECTRICAL ENGINEERING (CODE NO. 10) PAPER - I ELECTRICAL ENGINEERING (CODE NO. 10) PAPER - I 1. Circuit theory Circuit Components, Network graphs, KCL, KVL, Circuit analysis methods: Nodal analysis, mesh analysis, basic network theorems; transient

More information

EE301 Electronics I , Fall

EE301 Electronics I , Fall EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

More information

Electronic Devices 1. Current flowing in each of the following circuits A and respectively are: (Circuit 1) (Circuit 2) 1) 1A, 2A 2) 2A, 1A 3) 4A, 2A 4) 2A, 4A 2. Among the following one statement is not

More information

Digital Integrated Circuits - Logic Families (Part II)

Digital Integrated Circuits - Logic Families (Part II) Digital Integrated Circuits - Logic Families (Part II) MOSFET Logic Circuits MOSFETs are unipolar devices. They are simple, small in size, inexpensive to fabricate and consume less power. MOS fabrication

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-7 High Frequency

More information

About the Tutorial. Audience. Prerequisites. Copyright & Disclaimer. Linear Integrated Circuits Applications

About the Tutorial. Audience. Prerequisites. Copyright & Disclaimer. Linear Integrated Circuits Applications About the Tutorial Linear Integrated Circuits are solid state analog devices that can operate over a continuous range of input signals. Theoretically, they are characterized by an infinite number of operating

More information

SYED AMMAL ENGINEERING COLLEGE

SYED AMMAL ENGINEERING COLLEGE SYED AMMAL ENGINEERING COLLEGE (Approved by the AICTE, New Delhi, Govt. of Tamilnadu and Affiliated to Anna University, Chennai) Established in 1998 - An ISO 9001:2008 Certified Institution Dr. E.M.Abdullah

More information

Section 2.3 Bipolar junction transistors - BJTs

Section 2.3 Bipolar junction transistors - BJTs Section 2.3 Bipolar junction transistors - BJTs Single junction devices, such as p-n and Schottkty diodes can be used to obtain rectifying I-V characteristics, and to form electronic switching circuits

More information

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known

More information

Operational Amplifiers

Operational Amplifiers Operational Amplifiers Table of contents 1. Design 1.1. The Differential Amplifier 1.2. Level Shifter 1.3. Power Amplifier 2. Characteristics 3. The Opamp without NFB 4. Linear Amplifiers 4.1. The Non-Inverting

More information

Field - Effect Transistor

Field - Effect Transistor Page 1 of 6 Field - Effect Transistor Aim :- To draw and study the out put and transfer characteristics of the given FET and to determine its parameters. Apparatus :- FET, two variable power supplies,

More information

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s. UNIT-I FIELD EFFECT TRANSISTOR 1. Explain about the Field Effect Transistor and also mention types of FET s. The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their

More information

PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS

PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS PESIT BANGALORE SOUTH CAMPUS QUESTION BANK BASIC ELECTRONICS Sub Code: 17ELN15 / 17ELN25 IA Marks: 20 Hrs/ Week: 04 Exam Marks: 80 Total Hours: 50 Exam Hours: 03 Name of Faculty: Mr. Udoshi Basavaraj Module

More information

Reading. Lecture 17: MOS transistors digital. Context. Digital techniques:

Reading. Lecture 17: MOS transistors digital. Context. Digital techniques: Reading Lecture 17: MOS transistors digital Today we are going to look at the analog characteristics of simple digital devices, 5. 5.4 And following the midterm, we will cover PN diodes again in forward

More information

444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407

444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407 Index A Accuracy active resistor structures, 46, 323, 328, 329, 341, 344, 360 computational circuits, 171 differential amplifiers, 30, 31 exponential circuits, 285, 291, 292 multifunctional structures,

More information

B.C.A 2017 DIGITAL ELECTRONICS BCA104T MODULE SPECIFICATION SHEET. Course Outline

B.C.A 2017 DIGITAL ELECTRONICS BCA104T MODULE SPECIFICATION SHEET. Course Outline Course Outline B.C.A 2017 DIGITAL ELECTRONICS BCA104T MODULE SPECIFICATION SHEET The purpose of the course is to teach principles of digital electronics. This course covers varieties of topics including

More information

UNIT I PN JUNCTION DEVICES

UNIT I PN JUNCTION DEVICES UNIT I PN JUNCTION DEVICES 1. Define Semiconductor. 2. Classify Semiconductors. 3. Define Hole Current. 4. Define Knee voltage of a Diode. 5. What is Peak Inverse Voltage? 6. Define Depletion Region in

More information

INTRODUCTION: Basic operating principle of a MOSFET:

INTRODUCTION: Basic operating principle of a MOSFET: INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying

More information

UNIT IX ELECTRONIC DEVICES

UNIT IX ELECTRONIC DEVICES UNT X ELECTRONC DECES Weightage Marks : 07 Semiconductors Semiconductors diode-- characteristics in forward and reverse bias, diode as rectifier. - characteristics of LED, Photodiodes, solarcell and Zener

More information

Objective Questions. (a) Light (b) Temperature (c) Sound (d) all of these

Objective Questions. (a) Light (b) Temperature (c) Sound (d) all of these Objective Questions Module 1: Introduction 1. Which of the following is an analog quantity? (a) Light (b) Temperature (c) Sound (d) all of these 2. Which of the following is a digital quantity? (a) Electrical

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/ MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC 27001 2005 Certified) SUMMER 13 EXAMINATION Subject Code: 12025 Model Answer Page No: 1/ Important Instructions to examiners: 1) The

More information

Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET).

Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Q. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Answer: N-Channel Junction Field Effect Transistor (JFET) Construction: Drain(D)

More information

Lecture 4 -- Tuesday, Sept. 19: Non-uniform injection and/or doping. Diffusion. Continuity/conservation. The five basic equations.

Lecture 4 -- Tuesday, Sept. 19: Non-uniform injection and/or doping. Diffusion. Continuity/conservation. The five basic equations. 6.012 ELECTRONIC DEVICES AND CIRCUITS Schedule -- Fall 1995 (8/31/95 version) Recitation 1 -- Wednesday, Sept. 6: Review of 6.002 models for BJT. Discussion of models and modeling; motivate need to go

More information

An introduction to Depletion-mode MOSFETs By Linden Harrison

An introduction to Depletion-mode MOSFETs By Linden Harrison An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the enhancement-mode MOSFET has been the subject of almost continuous global research, development, and refinement

More information

Metal-Oxide-Silicon (MOS) devices PMOS. n-type

Metal-Oxide-Silicon (MOS) devices PMOS. n-type Metal-Oxide-Silicon (MOS devices Principle of MOS Field Effect Transistor transistor operation Metal (poly gate on oxide between source and drain Source and drain implants of opposite type to substrate.

More information

UNIT 3 Transistors JFET

UNIT 3 Transistors JFET UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It

More information

PROPOSED SCHEME OF COURSE WORK

PROPOSED SCHEME OF COURSE WORK PROPOSED SCHEME OF COURSE WORK Course Details: Course Title : LINEAR AND DIGITAL IC APPLICATIONS Course Code : 13EC1146 L T P C : 4 0 0 3 Program: : B.Tech. Specialization: : Electrical and Electronics

More information

Section:A Very short answer question

Section:A Very short answer question Section:A Very short answer question 1.What is the order of energy gap in a conductor, semi conductor, and insulator?. Conductor - no energy gap Semi Conductor - It is of the order of 1 ev. Insulator -

More information

OBJECTIVE TYPE QUESTIONS FOR PRACTICAL EXAMINATION Subject : Electronics-I ( EC 112)

OBJECTIVE TYPE QUESTIONS FOR PRACTICAL EXAMINATION Subject : Electronics-I ( EC 112) OBJECTIVE TYPE QUESTIONS FOR PRACTICAL EXAMINATION Subject : Electronics-I ( EC 112) 1. Which mathematical notation specifies the condition of periodicity for a continuous time signal? a. x(t) = x( t +T)

More information

QUESTION BANK EC6201 ELECTRONIC DEVICES UNIT I SEMICONDUCTOR DIODE PART A. It has two types. 1. Intrinsic semiconductor 2. Extrinsic semiconductor.

QUESTION BANK EC6201 ELECTRONIC DEVICES UNIT I SEMICONDUCTOR DIODE PART A. It has two types. 1. Intrinsic semiconductor 2. Extrinsic semiconductor. FATIMA MICHAEL COLLEGE OF ENGINEERING & TECHNOLOGY Senkottai Village, Madurai Sivagangai Main Road, Madurai - 625 020. [An ISO 9001:2008 Certified Institution] QUESTION BANK EC6201 ELECTRONIC DEVICES SEMESTER:

More information

BSNL TTA Question Paper Control Systems Specialization 2007

BSNL TTA Question Paper Control Systems Specialization 2007 BSNL TTA Question Paper Control Systems Specialization 2007 1. An open loop control system has its (a) control action independent of the output or desired quantity (b) controlling action, depending upon

More information

Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device

More information

i Intelligent Digitize Emulated Achievement Lab

i Intelligent Digitize Emulated Achievement Lab Electronics Circuits Equipment Intelligent Digitize Emulated Achievement Lab intelligent digitize emulated achievement lab is a digitized-based training system, which utilizes integrated Hardware Platform,

More information

Module-3: Metal Oxide Semiconductor (MOS) & Emitter coupled logic (ECL) families

Module-3: Metal Oxide Semiconductor (MOS) & Emitter coupled logic (ECL) families 1 Module-3: Metal Oxide Semiconductor (MOS) & Emitter coupled logic (ECL) families 1. Introduction 2. Metal Oxide Semiconductor (MOS) logic 2.1. Enhancement and depletion mode 2.2. NMOS and PMOS inverter

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor

More information

GATE: Electronics MCQs (Practice Test 1 of 13)

GATE: Electronics MCQs (Practice Test 1 of 13) GATE: Electronics MCQs (Practice Test 1 of 13) 1. Removing bypass capacitor across the emitter leg resistor in a CE amplifier causes a. increase in current gain b. decrease in current gain c. increase

More information

ECE/CoE 0132: FETs and Gates

ECE/CoE 0132: FETs and Gates ECE/CoE 0132: FETs and Gates Kartik Mohanram September 6, 2017 1 Physical properties of gates Over the next 2 lectures, we will discuss some of the physical characteristics of integrated circuits. We will

More information

Electrical Materials may be referred to a metal, dielectrics,electrical insulators or conductors,paramagnetic materials and many other.

Electrical Materials may be referred to a metal, dielectrics,electrical insulators or conductors,paramagnetic materials and many other. Electrical Engineering Paper-1 Syllabus : This part is for both objective and conventional types papers : 1) EM Theory- The electromagnetic force is said to be one of the fundamental interactions in nature

More information

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

More information

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the WINTER 14 EXAMINATION Subject Code: 17213 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)

More information

Solid State Devices- Part- II. Module- IV

Solid State Devices- Part- II. Module- IV Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the

More information

LINEAR IC APPLICATIONS

LINEAR IC APPLICATIONS 1 B.Tech III Year I Semester (R09) Regular & Supplementary Examinations December/January 2013/14 1 (a) Why is R e in an emitter-coupled differential amplifier replaced by a constant current source? (b)

More information

Class XII - Physics Semiconductor Electronics. Chapter-wise Problems

Class XII - Physics Semiconductor Electronics. Chapter-wise Problems lass X - Physics Semiconductor Electronics Materials, Device and Simple ircuit hapter-wise Problems Multiple hoice Question :- 14.1 The conductivity of a semiconductor increases with increase in temperature

More information

VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR- 603 203 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT I PN JUNCTION DEVICES 1. Define Semiconductor.

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS.

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS. Summer 2016 EXAMINATIONS Subject Code: 17321 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the answer scheme. 2) The

More information

S-[F] NPW-02 June All Syllabus B.Sc. [Electronics] Ist Year Semester-I & II.doc - 1 -

S-[F] NPW-02 June All Syllabus B.Sc. [Electronics] Ist Year Semester-I & II.doc - 1 - - 1 - - 2 - - 3 - DR. BABASAHEB AMBEDKAR MARATHWADA UNIVERSITY, AURANGABAD SYLLABUS of B.Sc. FIRST & SECOND SEMESTER [ELECTRONICS (OPTIONAL)] {Effective from June- 2013 onwards} - 4 - B.Sc. Electronics

More information

Lesson Plan. Electronics 1-Total 51 Hours

Lesson Plan. Electronics 1-Total 51 Hours Lesson Plan. Electronics 1-Total 5s Unit I: Electrical Engineering materials:(10) Crystal structure & defects; Ceramic materials-structures, composites, processing and uses; Insulating laminates for electronics,

More information