Improved ON-resistance Measurement at Wafer Probe using a "DARUMA" stage
|
|
- Harry Clark
- 5 years ago
- Views:
Transcription
1 Improved ON-resistance Measurement at Wafer Probe using a "DARUMA" stage Masatomo TAKAHASHI ACCRETECH, Japan Nobuyuki TOYODA TESEC, Japan
2 Background Trend of MOSFET Overview Solution DARUMA Transition of low ON resistance Overview of DARUMA Chuck (Rds (on) ) products Advantage of DARUMA Chuck etc. Present situation Verification Measurement by Standard Measurement by DARUMA stage Comparison with standard stage Matter of concern Simulation Suspected root cause Conclusion 2
3 Application and Criteria Trends of MOSFET Load switch for DC Supply-unit in server Low On-Resistance (Rds (on) ) Low Thermal Resistance (Rθjc, etc.) Wide Safe Operating Area (SOA) Switching device for switched-mode power supply (SMPS) Low Rds (on) Low Gate Charge (Qg) Motor control Low Reverse Recovery Time (trr) 3
4 Trends of MOSFET Purpose vs Representative Characteristics Energy savings Low On-Resistance (Low loss) Fast switching Low gate Capacitance (High speed) High reliability Wide Safe Operating Area, (High performance) High breakdown resistance Miniaturization Enhancement of Heat-resisting property (Small packaging) 4
5 Transition of low ON resistor products Si marginal Less than 1m ohm Sic marginal Gan marginal Breakdown volt (V) Graphs from Toshiba Review Vol.65No.1 (2010) 5
6 Present situation Standard System connection TESEC 431-TT Discrete DC Tester VI-SMU inside Test Station Drain Force(DI), Drain Sense(DV) Gate Force(GI), Gate Sense(GV), Source Force(SI), Source Sense(SV) Accretech UF2000 Wafer Prober 6
7 Present situation Simplified Schematics for Rds (on) testing at wafer probe IDS A Ammeter IDS Pulse Current VGS V Voltmeter VDS Drain Pulse Voltage Gate DUT Source 7
8 Present situation Simplified Schematics for Rds (on) to check waveform A Ammeter IDS Pulse Current IDS VGS V Voltmeter VDS Waveform Monitor on the Tester Drain VDS Pulse Voltage IDS, VGS DSO Gate DUT Source Current Sense Transformer 8
9 Present situation Timing chart VGS IDS 100uS 300uS 9
10 Present situation [Measurement result-1] Test condition : Rds (on), IDS=200A, Test time=500us Stage type : Standard 100uS 500uS 100uS 500uS VGS IDS 10
11 Present situation [Measurement result-2] Test condition : Rds (on), IDS=200A, Test time=1000us Stage type : Standard 100uS 1000uS 100uS 1000uS Stable after 500uS, but still gradually cut-down VGS IDS 11
12 Matters of concern Measurement waveform is unstable (Need longer test time to be stabilize) Increases Forcing time of test current Increases temperature of the tested device Decreases the test accuracy and production quality 12
13 Ideal test environment (Temperature) Matters of concern Exists when the channel(junction) and case (package) temp are the same. Requires Very short pulse during on-resistance test to achieve temperature parity between Junction and Case Characteristic of MOSFETs, the on-resistance will rise as the device temp is increased in an attempt to protect the device itself (as the resistance increases, the current decreases) Therefore, when testing Rds (on), controlling the temperature rise is critical to measurement stability. To control the temp during test, minimize the test time ON resistance vs Channel temperature From Fuji Electric AN-079 Rev
14 Ls (Stray Inductance) Expected root cause Self inductance of wire loop (round trip) I I d Diameter of the wire to be 2a, When the current is uniformly distributed in the electric wire, and the conductor is nonmagnetic. L = 4 * log(d/a) * 10^-7 [H/m] 14
15 Ls (Stray Inductance) Expected root cause Mutual inductance between parallel wires l d Pair of parallel wires, When l >> d, and in the air atmosphere. M = 2 * l * (log(2 * l / d) -1) * 10^-7 [H] 15
16 VDS waveform is NOT stable. Expected root cause Influence of the Stray Inductance (Ls) of the wiring between DUT and source & measurement circuits. Ls increases as the wire loop increases. A Drain Stage Source Wafer V 16
17 Expected root cause The cause of the VDS Spiking is in Ls. ΔV=Ls(di/dt) VGS IDS 17
18 DARUMA The Daruma doll, is a hollow, round, Japanese traditional doll modeled after Bodhidharma (Dharma), the founder of the Zen sect of Buddhism. Daruma has a design that is rich in symbolism and is regarded more as a talisman of good luck to the Japanese. When purchased, the eyes are white so a person can decide on a goal or wish and paint one eye in. Once the goal is achieved, the second eye is filled in. 18
19 Overview of DARUMA Chuck (1) Standard connection To Tester DARUMA connection To Tester Several cm Metal Plate Wire Over 2m 19
20 Overview of DARUMA Chuck (2) Pogo Block DARUMA Chuck Probe Card Needles Wafer Chuck Z Unit 20
21 DARUMA Chuck Advantage of DARUMA Chuck Back Pogo Pins Tester Probe Card Front Wafer Chuck Wafer Front side of wafer 200mm DARUMA Back side of wafer Wafer Chuck DARUMA Chuck Wafer Chuck DARUMA Chuck Maintain same distance 21
22 Alignment for Pogo Pins Probe to pad alignment camera Search pogo pin height and check the difference using alignment camera. Then calculate the best over drive point for contacting to the DARUMA chuck. 22
23 Maintenance Turn ON voltage/contact resistance <- Chuck surface condition Large current/inductive load test -> Deteriorating chuck top Required periodical chuck top maintenance Remove chuck Remove chuck Install chuck Planarity check 23
24 Overview of Evaluation Setup 24
25 Verification DARUMA System connection TESEC 431-TT Discrete DC Tester VI-SMU inside Test Station Drain Sense(DV) Gate Force(GI), Gate Sense(GV), Source Force(SI), Source Sense(SV), Drain Force(DI) Accretech UF2000 Wafer Prober 25
26 [Measurement result-1] Verification Test condition : Rds (on), IDS=200A, Test time=500us Stage type : DARUMA 100uS 500uS 100uS 500uS VGS IDS 26
27 [Measurement result-2] Verification Test condition : Rds (on), IDS=200A, Test time=1000us Stage type : DARUMA 100uS 1000uS 100uS 1000uS VGS Furthermore IDS 27
28 Comparison with standard stage Test condition : Rds (on), IDS=200A, Test time=1000us Standard connection DARUMA connection 28
29 Comparison with standard stage Standard DARUMA 29
30 Comparison with standard stage Standard system connection TESEC 431-TT Discrete DC Tester VI-SMU inside Test Station Drain Force(DI), Drain Sense(DV) Gate Force(GI), Gate Sense(GV), Source Force(SI), Source Sense(SV) Accretech UF2000 Wafer Prober 30
31 Comparison with standard stage DARUMA system connection TESEC 431-TT Discrete DC Tester VI-SMU inside Test Station Drain Sense(DV) Gate Force(GI), Gate Sense(GV), Source Force(SI), Source Sense(SV), Drain Force(DI) Accretech UF2000 Wafer Prober 31
32 Comparison with standard stage Point of interest North North Standard DARUMA Pogo Pins SI SI SV SV GI GI V GV V GV DI DI DV West East DV West East South South 32
33 Comparison with standard stage Point of interest Device Connection Comparison Table Standard vs DARUMA Standard DARUMA GV Probe Card GI Probe Card SV Probe Card SI Probe Card DV South East South of the Stage of the Stage DI North West of the Stage via 2m Wire North of the Stage via DARUMA 33
34 Point of interest Comparison with standard stage R3 is Contact resistance between Wafer and Stage. R3 DV R1 R2 DI R1 and R2 do not affect to VDSON value. R3 is added to VDSON. It is only R3 that increases VDSON. Measurement values are almost independent of location. 34
35 Simulation Simulated model Schematics for Standard connection A V R9 = Rds (on) Tester, Station and Wiring (Outside of the Prober) Inside of the Prober 35
36 Simulation Waveform Simulated vs Simulated Standard Actual Standard IDS VDS 36
37 Simulation Simulated model Schematics for DARUMA connection A V R9 = Rds (on) Tester, Station and Wiring (Outside of the Prober) Inside of the Prober 37
38 Simulation Waveform Simulated vs Simulated DARUMA Actual DARUMA IDS VDS 38
39 Simulation Simulated Waves comparison Standard vs DARUMA Simulated Standard Simulated DARUMA IDS IDS VDS VDS 39
40 Conclusion Demand for higher-efficiency of Mobile and Automotive devices, is driving the need for MOSFETs with even lower Rds (on). Improving measurement accuracy while at the same time reducing device stress will continue to be test challenges for the future. However, by employing a DARUMA stage, these test challenges can be met at wafer probe when testing (Rds (on) ) on MOSFETs. Ls will be minimized to enable reduced test time (especially at high current). By reducing test time, temperature rise will be reduced producing less stress on the DUT also resulting in more stable and accurate measurements. 40
41 Acknowledgements We would like to thank the following colleagues for supporting this workshop. Yuji SHIGESAWA Tomoyuki MYOJO Shoji TERADA Yuichi KAKIZAKI Kiyoaki KOYAMA Muneo ISHINOHACHI Masashi HOSHINO We hope these efforts bring further development of products that will contribute to societal advancements. 41
42 Thank you 42
Achieving 3000 V test at the wafer level
Achieving 3000 V test at the wafer level Bryan Root 1, Alex Pronin 2, Seng Yang 1,Bill Funk 1, K. Armendariz 1 1 Celadon Systems Inc., 2 Keithley September 2016 Outline Introduction Si, SiC and GaN Power
More informationVDSS (V) 650. V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 52. QG (nc) typ 6.2
650V GaN FET PQFN Series Not recommended for new designs Description The TPH3206L Series 650V, 150mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN
More informationVDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 52. QG (nc) typ 6.2 VIN=230VAC; VOUT=390VDC VIN=380VDC; VOUT=240VAC
650V GaN FET in TO-220 (source tab) Description The TPH3206PSB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon
More information235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength
Discontinued PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) (m ) 30 GaN Power Hybrid HEMT Half-Bridge Module Features High frequency operation Free-wheeling diode not required Applications Compact DC-DC
More informationVDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 60. QRR (nc) typ 136. QG (nc) typ 28 VIN=230VAC; VOUT=390VDC VIN=380VDC; VOUT=240VAC
650V GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon
More informationVDSS (V) 900. V(TR)DSS (V) 1000 RDS(on)eff (mω) max* 205. QRR (nc) typ 49. QG (nc) typ 10
900V GaN FET in TO-220 (source tab) Description The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon
More informationNext Generation Curve Tracing & Measurement Tips for Power Device. Kim Jeong Tae RF/uW Application Engineer Keysight Technologies
Next Generation Curve Tracing & Measurement Tips for Power Device Kim Jeong Tae RF/uW Application Engineer Keysight Technologies Agenda Page 2 Conventional Analog Curve Tracer & Measurement Challenges
More informationMOSFET Safe Operating Area FTI-1000 Application
Using the SOA or HP module, the Safe Operating Area test applies a given power to the MOSFET device under test (DUT) for a given pulse width. A passing device will absorb the programed power for the pulse
More informationPRELIMINARY. VDSS (V) 600 V(TR)DSS (V) 750 RDS(on)eff (mω) max* 60. QRR (nc) typ 120. QG (nc) typ 22 PRELIMINARY
PRELIMINARY TPH3205ESBET 600V GaN FET in TO-268 (source tab) Description The TPH3205ESBET 600V, 49mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT
More informationVDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on)
600V Cascode GaN FET in TO-220 (drain tab) Description The 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster
More informationTPH3207WS TPH3207WS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) Absolute Maximum Ratings (T C =25 C unless otherwise stated)
PRODUCT SUMMARY (TYPICAL) V DS (V) 650 R DS(on) (m ) 35 Q rr (nc) 175 Features Low Q rr Free-wheeling diode not required Quiet Tab for reduced EMI at high dv/dt GSD pin layout improves high speed design
More informationVDSS (V) 650 V(TR)DSS (V) 800. RDS(on)eff (mω) max* 85. QRR (nc) typ 90. QG (nc) typ 10
TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low
More informationWhat Is An SMU? SEP 2016
What Is An SMU? SEP 2016 Agenda SMU Introduction Theory of Operation (Constant Current/Voltage Sourcing + Measure) Cabling : Triax vs Coax Advantages in Resistance Applications (vs. DMMs) Advantages in
More informationTPH3202PS TPH3202PS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) TO-220 Package. Absolute Maximum Ratings (T C =25 C unless otherwise stated)
PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI GSD pin layout improves high speed design RoHS
More informationVDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 130. QRR (nc) typ 54. QG (nc) typ 14 VIN=230VAC; VOUT=390VDC VIN=380VDC; VOUT=240VAC
650V GaN FET TO-220 Series Description The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies
More informationTPH3205WSB. 650V Cascode GaN FET in TO-247 (source tab)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationVDSS (V) 650 V(TR)DSS (V) 800 RDS(on)eff (mω) max* 180. QRR (nc) typ 47. QG (nc) typ 10
TP65H150LSG 650V GaN FET PQFN Series Preliminary Datasheet Description The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET are normally-off devices. They combine state-of-the-art high voltage GaN HEMT
More informationSymbol Parameter Typical
PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI RoHS compliant High frequency operation Applications
More informationVDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 130. Qrr (nc) typ 54. * Dynamic R(on)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3208PS 650V, 110mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationVDSS (V) 650 V(TR)DSS (V) 800. RDS(on)eff (mω) max* 130. QRR (nc) typ 54. QG (nc) typ 10
650V GaN FET PQFN Series Not recommended for new designs Description The TPH3208L Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN
More informationTPH3212PS. 650V Cascode GaN FET in TO-220 (source tab)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3212PS 650V, 72mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationPitch Pack Microsemi full SiC Power Modules
Pitch Pack Microsemi full SiC Power Modules October 2014 SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy
More informationVDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 60. Qrr (nc) typ 136. Qg (nc) typ 28. * Dynamic RDS(on)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 49mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationTPIC3322L 3-CHANNEL COMMON-DRAIN LOGIC-LEVEL POWER DMOS ARRAY
Low r DS(on)....6 Ω Typ High-Voltage Outputs...6 V Pulsed Current...5 A Per Channel Fast Commutation Speed Direct Logic-Level Interface description SOURCE GATE SOURCE SOURCE3 D PACKAGE (TOP VIEW) 3 4 8
More informationVDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 63. Qrr (nc) typ 136. * Dynamic R(on)
600V Cascode GaN FET in TO-247 (source tab) Not recommended for new designs see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer
More informationPFU70R360G / PFD70R360G
FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power
More informationTransient Current Measurement for Advance Materials & Devices
& Devices 8 May 2017 Brian YEO Application Engineer Keysight Technologies Agenda 2 High speed data acquisition basics Challenges & solutions for transient current measurement. Considerations when making
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationAPT34N80B2C3G APT34N80LC3G
APT3NB2C3G APT3NLC3G *G Denotes RoHS Compliant, Pb Free Terminal Finish. V 3A.15Ω Super Junction MOSFET T-MAX COOLMOS TO-26 Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate
More informationIRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary
PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationN Channel Enhancement Mode Silicon Gate
SEMICONDUCTOR TECHNICAL DATA Order this document by IRF4/D N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
More information8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET. DESCRIPTION FEATURES
MOSFET N 6V 7.5A,2 OHM 8N6 7.5 Amps,6/65 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N6 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationHCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More information18 N Amps, 500 Volts N-CHANNEL MOSFET. Power MOSFET DESCRIPTION FEATURES SYMBOL
Power MOSFET 8 Amps, 500 Volts NCHANNEL MOSFET DESCRIPTION The YR 8N50 are NChannel enhancement mode power field effect transistors (MOSFET) which are produced using YR s proprietary,planar stripe, DMOS
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
More informationPOWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C
PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International
More informationAPT1003RBLL APT1003RSLL
APT3RBLL APT3RSLL V A 3.Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationSymbol Parameter Typical
PRODUCT SUMMARY (TYPICAL) V DS (V) 650 R DS(on) (m ) 110 Q rr (nc) 54 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI RoHS compliant High frequency operation Applications
More informationHCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationALL Switch GaN Power Switch - DAS V22N65A
Description ALL-Switch is a System In Package (SIP) switch. A Normally-Off safe function is integrated within the package, designed according to SmartGaN topology, an innovation by VisIC Technologies.
More informationIRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C
PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
More informationIRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D
PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*
More informationAPT8052BLL APT8052SLL
APT82BLL APT82SLL 8V A.2Ω Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly
More informationIRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings
PD-9779B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM597 JANSR2N756U8 V, P-CHANNEL REF: MIL-PRF-95/749 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
More informationIRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching
PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
More informationAgilent 4070 Series Accurate Capacitance Characterization at the Wafer Level
Agilent 4070 Series Accurate Capacitance Characterization at the Wafer Level Application Note 4070-2 Agilent 4070 Series Semiconductor Parametric Tester Introduction The continuing trend of decreasing
More informationData Sheet Explanation
Data Sheet Explanation V1.2 2014-04 Edition 2014-01 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN
More informationIRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB
PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58
More informationHCS90R1K5R 900V N-Channel Super Junction MOSFET
HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationTECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A
2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4
More informationHCS80R850R 800V N-Channel Super Junction MOSFET
HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationIRF9230 JANTXV2N6806
PD-90548D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) Product Summary Part Number BVDSS RDS(on) ID IRF9230-200V 0.80 Ω -6.5A IRF9230 JANTX2N6806 JANTXV2N6806 REF:MIL-PRF-19500/562
More informationMOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA)
V A.65Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STW48N60M2-4 48N60M2 TO247-4 Tube
N-channel 600 V, 0.06 Ω typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V DS @ T Jmax. R DS(on)max. I D STW48N60M2-4 650 V 0.07 Ω 42 A Excellent switching
More informationPKP3105. P-Ch 30V Fast Switching MOSFETs
Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin
More information2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω
More informationMOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA)
APT2M11JLL 2V A.11Ω POWER MOS 7 R Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement
More informationVGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A
PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International
More informationPrerelease Product(s) - Prerelease Product(s)
Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mω (typ., TJ=150 C), in an HiP247 package HiP247 Figure 1: Internal schematic diagram 1 2 3 Features Datasheet - preliminary data Designed for automotive
More informationDesign considerations of Paralleled GaN HEMT-based Half Bridge Power Stage
Design considerations of Paralleled GaN HEMT-based Half Bridge Power Stage Last update: July 17, 2018 GaN Systems 1 Contents Paralleling design considerations Layout considerations for paralleling GaN
More informationHEXFET MOSFET TECHNOLOGY
PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) ID IRFN350 0.315 Ω 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY
More information2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3
More informationIRHNJ57133SE SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704 TECHNOLOGY. Absolute Maximum Ratings
PD - 94294C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ5733SE JANSR2N7485U3 3V, N-CHANNEL REF: MIL-PRF-95/74 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part
More informationFREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C
APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power
More informationTHRU-HOLE (Tabless - Low-Ohmic TO-254AA)
PD-96973A RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMB57Z6 K Rads (Si).55Ω 45A* IRHMB53Z6 3K Rads (Si).55Ω 45A*
More informationIRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings
PD - 94334B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF5733SE JANSR2N7497T2 3V, N-CHANNEL REF: MIL-PRF-95/76 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
More informationToday most of engineers use oscilloscope as the preferred measurement tool of choice when it comes to debugging and analyzing switching power
Today most of engineers use oscilloscope as the preferred measurement tool of choice when it comes to debugging and analyzing switching power supplies. In this session we will learn about some basics of
More informationIRHNJ V, N-CHANNEL POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703. Absolute Maximum Ratings. Product Summary
PD-93754G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ573 K Rads (Si).6Ω 22A* JANSR2N748U3 IRHNJ533 3K Rads (Si).6Ω
More informationHCS70R350E 700V N-Channel Super Junction MOSFET
HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationDrive and Layout Requirements for Fast Switching High Voltage MOSFETs
Drive and Layout Requirements for Fast Switching High Voltage MOSFETs Contents Introduction SuperJunction Technologies Influence of Circuit Parameters on Switching Characteristics Gate Resistance Clamp
More informationMOSFET = 0V, I D = 16.5A) = 10V, I D = 200V, V GS = 0V) = 0V, T C = 160V, V GS = 0V) = ±30V, V DS. = 2.5mA)
APT82JLL 8V A.2Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by
More informationSYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B
PD-9440B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG 00K Rads (Si) 6.mΩ 60nC IRHSLNA53064 300K Rads (Si) 6.mΩ 60nC IRHSLNA54064
More informationIRLS3034PbF IRLSL3034PbF
PD -97364A IRLS334PbF IRLSL334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
More informationIRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
More informationIRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features: 1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED
PD - 90550D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF9130-100V 0.30Ω -6.5A IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849
More informationAPT30M30B2FLL APT30M30LFLL
POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering
More informationTO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm
More informationI2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@V GS = 10 V This advanced technology has - been Low
More informationKeysight Technologies 1500 A and 10 kv High-Power MOSFET Characterization using the Keysight B1505A
Keysight Technologies 1500 A and 10 kv High-Power MOSFET Characterization using the Keysight B1505A Application Note B1505A Power Device Analyzer/ Curve Tracer N1265A Ultra High Current Expander/Fixture
More informationTC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds
General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially
More informationAutomotive-grade dual N-channel 40 V, 8 mω typ., 15 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 DI. Features. Description
Automotive-grade dual N-channel 40 V, 8 mω typ., 15 A STripFET F5 Power MOSFET in a PowerFLAT 5x6 DI Datasheet - production data Features Order code VDS RDS(on) max. ID STL15DN4F5 40 V 9 mω 15 A Designed
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-263 1 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power
More informationHRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET
HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
More informationCascode Configuration Eases Challenges of Applying SiC JFETs
Application Note USCi_AN0004 March 2016 Cascode Configuration Eases Challenges of Applying SiC JFETs John Bendel Abstract The high switching speeds and low R DS(ON) of high-voltage SiC JFETs can significantly
More informationn Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
More informationV DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
More informationHFP4N65F / HFS4N65F 650V N-Channel MOSFET
HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationDFP50N06. N-Channel MOSFET
N-Channel MOSFET Features R DS(on) (Max.22 )@ =1V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 1% Avalanche Tested 1.Gate 2.Drain 3.Source BS = 6V R DS(ON) =.22 ohm = 5A General
More informationN Channel Enhancement Mode Silicon Gate
SEMICONDUCTOR TECHNICAL DATA Order this document by MTPN4E/D N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and
More informationHCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET
HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
More informationElectrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol
N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationApplication Note 0009
Recommended External Circuitry for Transphorm GaN FETs Application Note 9 Table of Contents Part I: Introduction... 2 Part II: Solutions to Suppress Oscillation... 2 Part III: The di/dt Limits of GaN Switching
More information2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary
PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 4A, 6V N-CHANNEL POWER MOSFET DESCRIPTION TO-22F TO-22F The UTC 4N6-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More information