WHM02AE 100 khz GHz LOW NOISE WIDE BAND

Transcription

1 WHM2AE Hz - 3. GHz LOW NOISE WIDE BAND September 7 Key Features Hz ~ 3. GHz.7 Noise Figure 27. m Output IP ~ 22. Gain 14. m P 1 1.3:1 VSWR Single Power Supply >68 Years MTBF ROHS Compliant MLS-1 Moisture Sensitivity Level Product Description WHM2AE integrates WanTcom proprietary low noise amplifier technologies, high frequency micro electronic assembly techniques, and high reliability designs to realize optimum low noise figure, wideband, and high performances together. With single +2.V~+3.V DC operation, the amplifier has optimal input and output matching in the specified frequency range at -Ohm impedance system. The amplifier has standard.12 x.12 x. surface mount pacage. Applications Mobile Infrastructures GPS CATVDBS Security System Measurement Fixed Wireless Specifications Table 1 Summary of the electrical specifications WHM2AE without external matching components at room temperature Index Testing Item Symbol Test Constraints Min Nom Max Unit 1 Gain S 21 Hz 3. GHz 23 2 Gain Variation G Every MHz Input Return Loss S 11 Hz 1. GHz 4 Output Return Loss S 22 Hz 1. GHz 16 Reverse Isolation S 12 Hz 3. GHz 6 Noise Figure NF. 3. GHz Output Power 1 Compression Point P 1 Hz 3. GHz, 3 3.V m 8 Output-Third-Order Interception point IP 3 Two-Tone, P out = m each, 1 MHz separation 27 m 9 Current Consumption I dd V dd = +2.V ~ +3.V 4 ma Power Supply Voltage V dd V 11 Thermal Resistance R th,c Junction to case 2 o CW 12 Operating Temperature T o Maximum Average RF Input Power P IN, MAX DC 6. GHz m o C Absolute Maximum Ratings Application Schematic Parameters Units Ratings DC Power Supply Voltage V Drain Current ma Total Power Dissipation mw 1 RF Input Power m Channel Temperature C Storage Temperature C -6 ~ 1 Operating Temperature C -4 ~ + Thermal Resistance CW 2 Operation of this device beyond any one of these parameters may cause permanent damage. Ordering Information Model Number WHM2AE Waffle pac with the capacity of pieces ( x ) is used for the pacing. Contact factory for tape and reel pacing option for higher volume order. Contact factory for tape and reel pacing option. WanTcom, Inc Tel: Fax: sales@wantcominc.com Web site: 17

2 WHM2AE Hz - 3. GHz LOW NOISE WIDE BAND September 7 Outline Foot Print UNITS: INCH [mm] Typical Data Without External Components Table 1 summarizes the WHM2AE electrical performance without any external matching components. The amplifier is biased through vector networ analyzer (VNA) internal bias-t at port 1 and port 2. The data are measured using the internal bias-t of Agilent 873ES VNA and WanTcom test fixture, WTFR-, with de-embedded LRM calibration. Small Signal Performance in Linear Scale Small Signal Performance in LOG Scale 1. Noise C V-mA 3V-mA 2V-3mA 3V-3mA S11, 2V-mA S21, 2V-mA S12, 2V-mA S22, 2V-mA S11, 2V-3mA S21, 2V-3mA S12, 2V-3mA S22, 2V-3mA S11, 3V-mA S21, 3V-mA S12, 3V-mA S22, 3V-mA S11, 3V-3mA S21, 3V-3mA S12, 3V-3mA S22, 3V-3mA S11, 2V-mA S21, 2V-mA S12, 2V-mA S22, 2V-mA S11, 2V-3mA S21, 2V-3mA S12, 2V-3mA S22, 2V-3mA S11, 3V-mA S21, 3V-mA S12, 3V-mA S22, 3V-mA S11, 3V-3mA S21, 3V-3mA S12, 3V-3mA S22, 3V-3mA P1 IP3 1. Stability Factor 19 2V-mA 3V-mA 2V-3mA 3V-3mA 34 2V-mA 3V-mA 2V-3mA 3V-3mA 1.4 3V-3mA V-3mA V-mA m m WanTcom, Inc Tel: Fax: sales@wantcominc.com Web site: 27

3 WHM2AE Hz - 3. GHz LOW NOISE WIDE BAND September 7 Typical Applications: FIG. 1 shows the universal LNA test schematic for WHM2AE. It is the modification of the application schematic to use one test board for different band LNA assembly. In the schematic, there are several components for L B1, L D1, R B1, C B1, and C D1 which are created for different band LNA applications. For MHz to 3 GHz LNA, only L B1a, C B1a, R B1a, L D1a, C D1a, and R D1 are used due to smaller inductor sizes. For below MHz band applications, larger value inductors are needed in order to extend the lower frequency operation. In this case, L B1b, C B1b, R B1b, L D1b, and C D1b etc are used and bridge L B1a and L D1a. FIG. 1 Universal LNA test schematic for WHM2AE FIG. 2 Universal LNA test board for WHM2AE. FIG. 2 shows the universal LNA test board for WHM2AE. In the test board, various footprints for L B1, L D1, R B1, C B1, C D1, R 1, R 2, and C 1 are created for different band LNA applications. The test board is a microstrip based design and all the components are on the same layer. The bacside of the board is ground plane. The blue color dots are the metallically plated ground vias to connect the signal layer ground to the ground plane. C in and C out are the input and out DC bloc capacitors. The 42 size ceramic capacitor is used for low loss and high frequency performance consideration. For MHz or higher LNA applications, L B1a and L D1a are the input and output RF choes to provide the DC bias paths. C B1a and C D1a are the decoupling capacitors. R B1a is used for adjusting the DC bias current of the amplifier. The higher R B1a value, the higher total DC bias current will be. For lower band operations, leave C B1a, R B1a, C D1a, R 1, and R 2 empty. Bridge L B1a and L D1a and use L B1b and L D1b for the RF choes. The C B1b and C D1b are used for the de-coupling capacitors and R B1b for adjusting the DC bias current. 1 MHz MHz Low Noise Amplifier: With larger value L B1 and L D1 for the RF choes in the DC bias paths and higher value DC bloc capacitors C in and C out, wide band low frequency low noise amplifier can be formed simply using WHM2AE. Table 2 is the bill of material (BOM) for the 1 MHz LNA. FIG. 3 is the measured passband frequency response, noise figure, P 1, and IP 3. With proper selection of the bias current and drain voltage, the LNA can be configured to have excellent gain flatness, superior return losses, and low noise figure. In the last column of the BOM table, the specified manufacture with means the component can be substituted by other manufacturer s equivalent part. The specified manufacturer s components are recommended with the bolded components. For example, Cin capacitor can be substituted with other vender s.1uf capacitor instead of Murata as long as the other vender s capacitor is equivalent to the specified one. However, IC 1 needs to be WanTcom s OEM part. WanTcom, Inc Tel: Fax: sales@wantcominc.com Web site: 37

4 WHM2AE Hz - 3. GHz LOW NOISE WIDE BAND September 7 Table 2 BOM of 1 MHz LNA Site QTY Description Pg Mfgr Part No. Mfgr Cin, Cout, CB1b, CD1b 4 CAP,.1uF V %XR 42 GRMR61A4KA1D Murata C1, CB1a, CD1a, RB1a, R1, R2 6 EMPTY LB1a, LD1a 2 RES,. OHM 63 9C631ARJLHFT Phylcom LB1b, Ld1b 2 47 UH -- 87FU-221M ToKo * RB1b 1 RES, 169 OHM 1% 116W 42 ERJ-2RKF169X IC1 1 LNA M3 WHM2AE WanTcom PCB 1 WHM2AE MB WanTcom MHz LNA Perfromance in LOG Scale S11, 2V-mA S21, 2V-mA S12, 2V-mA S22, 2V-mA S11, 2V-3mA S21, 2V-3mA S12, 2V-3mA S22, 2V-3mA MHz LNA Noise C 2V-mA 2V-3mA m 1- MHz LNA IP3 & P1 3 IP3, 2V-mA IP3, 2V-3mA P1, 2V-mA P1, 2V-3mA (a) Frequency response (b) Noise figure (c) P 1 and IP 3 FIG MHz LNA performance..1 GHz GHz Low Noise Amplifier With proper setting L B1 and L D1 for the RF choes for the DC bias paths, wide band high frequency low noise amplifier can be formed simply using WHM2AE. Table 3 is the bill of material (BOM) for the.1 GHz GHz LNA. FIG. 4 is the measured passband frequency response, P 1, IP 3, noise figure, and performance with the drain voltage of 3. V and drain current of 3 ma. The value is slightly less than is due to the parasitic resonance of the inductors, L B1a and L D1a. For +.V DC power supply, R 1 is 68 Ohm and R 2 is empty in order to get 3. V drain bias voltage. This configuration will help less sensitivity of the drain DC bias current to the RB 1 value and temperature. Different R 1 value can be calculated for different drain DC bias current and voltage settings. For 2.V drain voltage and 3 ma current selection with +.V power supply, the total voltage drop on R 1 is 3.V and R 1 value is Ohm. A regular 42 size Ohm resistor does not have enough power rating for that. Thus, R 1 and R 2 of Ohm each are in parallel to share the power dissipation. Table 3 BOM of.1 GHz GHz LNA Site QTY Description Pg Mfgr Part No. Mfgr Cin, Cout, CB1a, CD1a 4 CAP,.1uF V % X7R 42 ECJ-EB1E3K C1 1 CAP, 1.pf V 42 SMD 42 ECJ-EC1HC CB1b, CD1b, LB1b, LD1b, RB1b, R2 6 EMPTY LB1a 1 IND, 2 nh 1MA 63 LQW18ANR27JD Murata LD1a 1 IND, 2 nh 1MA 63 LQW18ANR27JD Murata * RB1a 1 RES, 169 OHM 1% 116W 42 ERJ-2RKF169X R1 1 RES, OHM 42 MCR1MZPJ ROHM IC1 1 LNA M3 WHM2AE WanTcom PCB 1 WHM2AE MB WanTcom WanTcom, Inc Tel: Fax: sales@wantcominc.com Web site: 47

5 WHM2AE Hz - 3. GHz LOW NOISE WIDE BAND September 7.1- GHz LNA C m.1 - GHz LNA C IP3 P1 NF NF ().1 - GHz LNA, Stability Factor. 4. 3V-3mA 3. REF (a) Frequency response ( b) Noise figure, P 1, and IP 3 (c) FIG. 4.1 GHz GHz LNA performance. 1.1 GHz GHz Low Noise Amplifier With proper selecting values of L B1, L D1, C in, and C out, wide band high frequency low noise amplifier can be formed simply using WHM2AE for 1.1 GHz GHz band applications. Table 4 is the BOM. FIG. is the measured passband frequency response, P 1, IP 3, noise figure, and performance with the drain voltage of 3. V and drain current of 3 ma. Table 4 BOM of 1.1 GHz GHz LNA Site QTY Description Pg Mfgr Part No. Mfgr Cin 1 CAP, pf V 42 SMD 42 C42CJGACTU KEMET Cout 1 CAP, 6.8pF V 42 SMD 42 42N6R8DNT BC CB1a, CD1a 2 CAP,.1uF V % X7R 42 ECJ-EB1E3K C1 1 CAP,. pf V +-. pf NPO 42 GRMC1HRCZ1D Murata CB1b, CD1b, LB1b, LD1b, RB1b EMPTY LB1a 1 IND, 2 nh 1MA 63 LQW18ANR22JD Murata Ld1a 1 IND, 27 nh 44MA 63 LQW18AN27NJD Murata * RB1a 1 RES, 169 OHM 1% 116W 42 ERJ-2RKF169X RD1 1 RES, OHM 42 MCR1MZPJ ROHM IC1 1 LNA M3 WHM2AE WanTcom PCB 1 WHM2AE MB WanTcom 1.1- GHz LNA C m GHz LNA C IP3 P1 NF NF () GHz LNA, Stability Factor V-3mA (a) Frequency response ( b) Noise figure, P 1, and IP 3 (c) FIG..1 GHz GHz LNA performance. WanTcom, Inc Tel: Fax: sales@wantcominc.com Web site: 7

6 WHM2AE Hz - 3. GHz LOW NOISE WIDE BAND September GHz 2.2 GHz Low Noise Amplifier With proper selecting values of L B1, L D1, C in, and C out, wide band high frequency low noise amplifier can be formed simply using WHM2AE for 1.7 GHz 2.2 GHz band applications. Table is the BOM. FIG. 6 is the measured passband frequency response, P 1, IP 3, noise figure, and performance with the drain voltage of 3. V and drain current of 3 ma. Table BOM of 1.7 GHz 2.2 GHz LNA Site QTY Description Pg Mfgr Part No. Mfgr Cin 1 CAP,.pF±.pF V SMD 42 ECJ-EC1HC Cout 1 CAP, 3.pF±.pF V SMD 42 ECJ-EC1H3C CB1a, CD1a 2 CAP,.1uF V % X7R 42 ECJ-EB1E3K C1 1 CAP,.3pF V 42 COG 42 GRMC1HR3CZ1D Murata CB1b, CD1b, LB1b, LD1b, RB1b, R2 EMPTY LB1a 1 IND, 2 nh 1MA 63 LQW18ANR22JD Murata Ld1a 1 IND, nh SMD 63 LQW18ANNJD Murata * RB1a 1 RES, 169 OHM 1% 116W 42 ERJ-2RKF169X R1 1 RES, OHM 42 MCR1MZPJ ROHM IC1 1 LNA M3 WHM2AE WanTcom PCB 1 WHM2AE MB WanTcom GHz LNA C m GHz LNA C IP3 P1 NF NF () GHz LNA, Stability Factor V-3mA (a) Frequency response ( b) Noise figure, P 1, and IP 3 (c) FIG GHz 2.2 GHz LNA performance. 2.2 GHz 2.7 GHz Low Noise Amplifier With proper selecting values of L B1, L D1, C in, and C out, wide band high frequency low noise amplifier can be formed simply using WHM2AE for 1.7 GHz 2.2 GHz band applications. Table 6 is the BOM. FIG. 7 is the measured passband frequency response, P 1, IP 3, noise figure, and performance with the drain voltage of 3. V and drain current of 3 ma. Table 6 BOM of 2.2 GHz 2.7 GHz LNA Site QTY Description Pg Mfgr Part No. Mfgr Cin, Cout 2 CAP, pf V 42 SMD 42 GRMC1H2R4BZ1E Murata CB1a, CD1a 2 CAP,.1uF V % X7R 42 ECJ-EB1E3K C1 1 CAP,.+-.pF 42 R7SR2AV4T Johanson CB1b, CD1b, LB1b, LD1b, RB1b, R2 6 EMPTY LB1a 1 IND, 2 nh 1MA 63 LQW18ANR22JD Murata Ld1a 1 IND, nh SMD 63 LQW18ANNJD Murata * RB1a 1 RES, 169 OHM 1% 116W 42 ERJ-2RKF169X R1 1 RES, OHM 42 MCR1MZPJ ROHM IC1 1 LNA M3 WHM2AE WanTcom PCB 1 WHM2AE MB WanTcom WanTcom, Inc Tel: Fax: sales@wantcominc.com Web site: 67

7 WHM2AE Hz - 3. GHz LOW NOISE WIDE BAND September GHz LNA C m GHz LNA C IP3 P1 NF NF () GHz LNA, Stability Factor V-3mA (a) Frequency response ( b) Noise figure, P 1, and IP 3 (c) FIG GHz 2.7 GHz LNA performance ****** WanTcom, Inc Tel: Fax: sales@wantcominc.com Web site: 77