RV1 OEN REL 2 NPIRIN 3 VSS 14 VSS VSS

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1 Features Digital signal processing On chip supply shunt regulator Low power consumption Differential PIR sensor input Excellent power supply rejection Insensitive to RF interference Inputs for sensitivity, on time and daylight sensor Outputs for relay and LED Instantaneous settling after power up Adaptive Zero Crossing Switching Applications Mains powered motion sensor lights that require relay switching on zero crossing, common requirement for low cost relays and capacitive loads. General Description The E integrated circuit combines all required functions for a single chip Passive Infra-Red (PIR) motion sensor. Motion detection is signaled through the push-pull REL output. A digital input OEN enables REL output. The load is switched during mains voltage zero crossing. The algorithm adapts to the relay type and mains frequency. A LED output indicates whenever the PIR Signal is above the selected threshold. The E interfaces directly with up to two conventional PIR sensors via a high impedance differential input. The PIR signal is converted to a 15 bit digital value on chip. The parameters for sensitivity and timing are set by connecting the corresponding inputs to DC voltages. The voltage levels on the inputs are converted to digital values with 7 bit resolution. All signal processing is performed digitally. Ordering Information Product ID Op. Temp. Range Package E C to +85 C SOIC14N/TSSOP14 Typical Application Circuit R1 R2 LIVE R3 Z1 C2 D2 RE1A D1 C1 C4 C3 RV1 R6 R5 ENVREG 4 VDD 5 10 OEN R4 RV3 VDD 13 SENS 9 6 REL R7 Q1 CDS1 LOAD PIR1 RV2 E ONTIME 8 7 LED R10 V1 C5 PIRIN 1 ZCL 12 2 NPIRIN 3 NEUTRAL C6 R9 R8 ZCN R11 R12 1/12

2 Functional Diagram PIRIN NPIRIN PIR ADC OSC BAND GAP REF Digital Filter Load Sense Circuit Comparator & Alarm Event Logic REL LED OEN VDD ENVREG GND ON TIME SENS PIN ADC Test Control Logic E ZCL ZCN Pin Configuration Top View Pin PIRIN NPIRIN ENVREG VDD ZCL ZCN OEN SENS ONTIME E VDD REL LED Note: Not to scale 2/12

3 Pin Description Pin Name Type 1) Description 1 PIRIN I PIR sensor input 2 NPIRIN I Negative PIR sensor input 3 S Negative supply voltage 4 ENVREG Regulator enable, connect to to enable regulator, connect to V SS to disable regulator for low current battery based applications, where will be less than 3.6V. 5 VDD S Positive supply voltage, shunt regulator 6 REL O RELAY output (push-pull) 7 LED O LED output (push-pull) 8 ONTIME I On time selection input 9 SENS I Sensitivity selection input 10 OEN O > V IH : REL output is enabled This input is used for factory test and the < V IL : REL output is disabled voltage needs to remains between and V SS 11 ZCN I Current sense input for Neutral 12 ZCL I Current sense input for Load 13 VDD S Positive supply voltage, shunt regulator 14 S Negative supply voltage 1) I = Input, O = Output, I/O = Input/Output, S= Supply 3/12

4 1 Absolute Maximum Ratings Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress ratings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. All voltages with respect to ground. Currents flowing into terminals are positive, those drawn out of a terminal are negative. Description Condition Symbol Min Max Unit Supply Voltage V Current into any pin One pin at a time ma Storage Temperature T st C 2 Electrical Characteristics (V VDD = +2.7V to +3.6V, T AMB = -25 C to +85 C, unless otherwise noted. Typical values are at V VDD = +3V and T OP = +25 C. Positive currents flow into the device pins.) Description Condition Symbol Min Typ Max Unit Temperature Operating temperature range C Regulator Shunt regulator current I R 5 ma Supply current, ENREG=VDD Supply current, ENREG= VDD < Regulator voltage, Outputs unloaded Regulator not active, VDD=3.3V 4/12 I DD 50 µa I DD 18 µa Regulator voltage I R = 0.5mA V Input OEN Input low voltage V IL 0.8 V Input high voltage V IH 0.9 V Input Current V SS <V IN < I I -1 1 µa Input ENVREG Input low voltage V IL 0.2 Input high voltage V IH 0.8 Input Current V SS <V IN < I I -1 1 µa Outputs REL, LED Output current high V OL >( -1V) I OH -10 ma Output current low V OL <1V I OL 10 ma Inputs SENS, ONTIME Input voltage range Adjustment between 0V and ¼ VDD 0 Input leakage current -1 1 µa ZCH / ZCN Inputs Input low current I IL µa Input high current I IH µa Input Voltage Input current +/-10µA I I VDD

5 (V VDD = +2.7V to +3.6V, T AMB = -25 C to +85 C, unless otherwise noted. Typical values are at V VDD = +3V and T OP = +25 C. Positive currents flow into the device pins.) Description Condition Symbol Min Typ Max Unit PIRIN / NPIRIN Inputs PIRIN /NPIRIN input resistance to V SS -60mV < VIN < 60mV 20 GΩ PIRIN /NPIRIN input resistance differential -60mV < VIN < 60mV 40 GΩ PIRIN input voltage range mv Oscillator and Filter LPF cutoff frequency 7 Hz HPF cutoff frequency 0.44 Hz On chip oscillator frequency F CLK 64 khz System Clock C_G F CLK /2 3 Functional Description 3.1 PIR Sensor Input A differential input stage provides for the connection of up to two PIR sensors. The analog to digital converter generates a digital signal from the voltage level measured between the PIRIN and NPIRIN pins. A band gap reference ensures a temperature and supply voltage independent gain. 3.2 Voltage Regulator The integrated shunt voltage regulator can be activated by the user through the ENVREG input. The E can be operated directly from batteries or regulated supply voltages ranging from 2.7V to 3.6V. In this case, the voltage regulator needs to be switched off and the user can benefit from the very low current consumption. In applications with higher voltages, the user would activate the on chip shunt regulator, which generates a stable supply voltage of 3V for the E and the PIR detector. The VDD pin requires a bypass capacitor to. The reference for the shunt regulator is taken from the integrated band gap reference. 3.3 Oscillator The IC contains an on chip low power oscillator. The frequency is set to 64kHz. The timing signals and cutoff frequencies of the digital filters are derived from this frequency 3.4 Band-Pass Filter A differential input stage provides for the connection of up to two PIR sensors. The analog to digital converter generates a digital signal from the voltage level measured between the PIRIN and NPIRIN pins. A band gap reference ensures a temperature and supply voltage independent gain. 3.5 Alarm Event Processor The signal from the band pass filter is rectified. When the signal level exceeds the selected sensitivity threshold, the REL output is activated. The LED output is active (high), whenever the signal level is above the sensitivity threshold. The voltage applied to the ONTIME input determines how long the REL output stays active. The REL output remains active from the first alarm condition to the last alarm condition plus the time selected with the ON- TIME input. 3.6 Relay Switching The E ensures, that the load is only switched on during mains voltage zero crossing. This function prevents early relay failure due to excessive contact wear when switching capacitive loads such as compact fluorescent lights. 5/12

6 3.7 Power Up The on chip power on reset keeps the circuit in a reset condition until the supply voltage is high enough for a stable operation. The REL output is activated independently of the OEN input signal for the duration, which is selected with the voltage on the ONTIME input. Activation of the RELAY output takes place 500ms after it detects uninterrupted mains signal (zero crossings) on the ZCN input. 3.8 Mains Voltage Presence Detection The integrated circuit monitors mains voltage/frequency presence through the ZCN input. Whenever the mains zero crossings disappear for duration of more than 0.5s, the circuit assumes, that the voltage has been disconnected. If the voltage is re-connected, the load is switched on in the same way like after a power up. This feature does not require the discharge of the power supply in order to force a power on reset. 4 On Time A voltage applied to the ONTIME input set the time the REL output is active with a single trigger event. Any voltage above VDD/4 will select the maximum on time. Pin voltage PIN ADC count ON Time in seconds ON Time in minutes *1/128 or less *3/ *5/ *7/ *9/ *11/ *13/ *15/ *17/ *19/ *21/ *23/ *25/ *27/ *29/ *31/128 or above /12

7 5 Sensitivity A voltage applied to the SENS input sets the threshold used to detect a PIR signal between the PIRIN and NPIRIN inputs. selects the minimum threshold voltage. Any voltage above VDD/4 will select the maximum threshold, which is the least sensitive setting for PIR signal detection. Figure 1. PIR voltage trigger threshold vs. SENS pin voltages normalized to VDD ON Time 1000 Seconds Ontime Voltage, normalized to VDD Figure 2. REL Output On Time in seconds vs. ONTIME pin voltages normalized to VDD. 7/12

8 6 Application Information Designator Typ. Value Description Note U1 E PIR Controller IC TSSOP14 or SOIC14 U2 LHI968 Dual Element PIR Sensor TO-5 R1 1M Discharge resistor R2 100R Transient protection resistor Wire wound R3 56k Current limiting resistor R3 < (V Rel -V VDD )/(I IDD + I REL /β Q1 + I R4 +I R5 +I R6 ) R7 22k REL drive current setting resistor R7 = I REL /β Q1 R4 10k Current limiting resistor In case V CDS =0 and RV1 is also turned to 0 R5 680k Voltage divider V VDD /4 = (RV3) / (RV3+R5) R6 680k Voltage divider V VDD /4 = (RV2) / (RV2+R6) R8 2.2M Pull down resistor R9 100k Pull down resistor R10 220k Pull down resistor Load voltage clamp resistor,r10 must be able to drop full load when REL is active R11 10M Load voltage sensing resistor R12 10M Neutral voltage sensing resistor D1 1N4148 Fly back protection diode D2 DB104S Diode bridge Z1 ZD47 47V Zener Diode Choose according to RE1 voltage CdS1 Light dependent resistor RV1 2.2M OEN Voltage Adjust (Dark level) RV2 220k Sensitivity adjustment Select in conjunction with R6 RV3 220k On Time adjustment Select in conjunction with R5 V1 S10275VAC Transorb, for high voltage spike protection C1 150n/230VAC Voltage dropper capacitor C2 10µF/64V Supply voltage storage Voltage rating dependant on RE1 voltage C3 1µF/6V Decoupling capacitor Ceramic, close to supply pins of device C4 10µF/6V Sensor supply storage Regulator compensation capacitor C5 470nF PIR signal bypass capacitor RE1 47V N.O. REL High coil voltage, less drive current S1 3 position Mains switch 8/12

9 7 Package Information 7.1 SOIC14N The E is available in a Pb free, RoHs compliant SOIC14N plastic package according to JEDEC MS-012-F, variant AB. The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020 with a soldering peak temperature of (260+5) C. Package Outline and Dimensions are according JEDEC MS-012-F, variant AB Description Symbol mm inch min typ max min typ max Package height A Stand off A Package body thickness A Width of terminal leads, inclusive lead finish b Thickness of terminal leads, inclusive lead finish c Package length D 8.65 BSC BSC Package width E 6.00 BSC BSC Package body width E BSC BSC Lead pitch e 1.27 BSC BSC Length of terminal for soldering to substrate L body chamfer (45 ) h Angle of lead mounting area phi [ ] mold release angle phi1 [ ] Number of terminal positions N Note: the mm values are valid, the inch values contains rounding errors 9/12

10 7.2 TSSOP14 The E is available in a Pb free, RoHs compliant TSSOP14 plastic package according to JEDEC MO-153-F, variant AB-1. The package is classified to Moisture Sensitivity Level 3 (MSL 3) according to JEDEC J-STD-020 with a soldering peak temperature of (260+5) C. Description Symbol mm inch min typ max min typ max Package height A Stand off A Package body thickness A Width of terminal leads, inclusive lead finish b Thickness of terminal leads, inclusive lead finish c Package length D Package width E 6.40 BSC BSC Package body width E Lead pitch e 0.65 BSC BSC Length of terminal for soldering to substrate L Angle of lead mounting area phi [ ] mold release angle phi1 [ ] 12 REF 12 REF Number of terminal positions N Note: the mm values are valid, the inch values contains rounding errors 10/12

11 8 Marking 8.1 Top Side Elmos Logo XXXSL Signature Explanation Elmos project number A Elmos project revision code XXX Production lot number S Assembler code L Production line code YWW Year and week of assembly R Mask revision Elmos internal code 11/12

12 WARNING Life Support Applications Policy Elmos Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing Elmos Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an Elmos Semiconductor AG Product could cause loss of human life, body injury or damage to property. In the development of your design, please ensure that Elmos Semiconductor AG products are used within specified operating ranges as set forth in the most recent product specifications. General Disclaimer Information furnished by Elmos Semiconductor AG is believed to be accurate and reliable. However, no responsibility is assumed by Elmos Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Elmos Semiconductor AG. Elmos Semiconductor AG reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability. Application Disclaimer Circuit diagrams may contain components not manufactured by Elmos Semiconductor AG, which are included as means of illustrating typical applications. Consequently, complete information sufficient for construction purposes is not necessarily given. The information in the application examples has been carefully checked and is believed to be entirely reliable. However, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of Elmos Semiconductor AG or others. Contact Information Headquarters Elmos Semiconductor AG Heinrich-Hertz-Str. 1 D Dortmund (Germany) : : sales-germany@elmos.com : Sales and Application Support Office North America Elmos NA. Inc Northwestern Highway Suite 220 Farmington Hills MI (USA) : : sales-usa@elmos.com Sales and Application Support Office Korea and Japan B-1007, U-Space 2, #670 Daewangpangyo-ro, Sampyoung-dong, Bunddang-gu, Sungnam-si Kyounggi-do Korea : : sales-korea@elmos.com Sales and Application Support Office China Elmos Semiconductor Technology (Shanghai) Co., Ltd. Unit London, 1BF GC Tower No Yuan Shen Road, Pudong New District Shanghai, PR China, : : sales-china@elmos.com Sales and Application Support Office Singapore Elmos Semiconductor Singapore Pte Ltd. 3A International Business Park #09-13 ICON@IBP Singapore : : sales-singapore@elmos.com Elmos Semiconductor AG, Reproduction, in part or whole, without the prior written consent of Elmos Semiconductor AG, is prohibited. 12/12

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