Bipolar Transistors. Ideal Transistor. Reading: (4-5 th edition) 8-16, Bipolar Transistor - Terminals. NPN Bipolar Transistor Physics
|
|
- Loren Bruce
- 6 years ago
- Views:
Transcription
1 Bipolar Transistors deal Transistor Bipolar Transistor Terminals Reading: (45 th edition) 816, 2633 P Bipolar Transistor Physics Large Signal Model Early Effect Small Signal Model Modern Electronics: F3 Bipolar transistor 1
2 deal Transistor characteristics out current source controlled by a voltage (V in ) in out ncreasing V in V in kv in V out Two main transistor types: Bipolar Transistor (Power Amplifiers, HighSpeed AD/DA) V out Field Effect Transistors (99.999% mainly integrated circuits / digital) out independent of V out! in independent of V out! Modern Electronics: F3 Bipolar transistor 2
3 Bipolar Transistor npn ollector Sign convention: V xy =V x V y V B Base B V E B base current collector current E Emitter urrent = ( B ) V BE E Emitter Modern Electronics: F3 Bipolar transistor 3
4 Bipolar Transistor npn in active mode Emitter P Base ollector npn V BE >0 Forward biased P junction V B <0 Reverse biased P junction Modern Electronics: F3 Bipolar transistor 4
5 Bipolar transistor: band structure n=n po exp(v BE /kt) n 0 E B P E Fn ev BE B Forward biased emitterbase junction injects electrons Reverse biased basecollector junction sweeps away electrons (independent of V B ) Modern Electronics: F3 Bipolar transistor 5
6 Operating modes Unbiased P utoff EBJ: reverse / BJ: reverse emitter base collector Active EBJ: forward / BJ: reverse Saturation EBJ: forward / BJ: forward Modern Electronics: F3 Bipolar transistor 6
7 Electron diffusion currents active mode ncreasing V BE ncreasing V E V E Modern Electronics: F3 Bipolar transistor 7
8 urrents in active mode E B1 B2 = 0 E Emitter P Base ollector B2 B1 B V BE >0 V B <0 On whiteboard: calculate, B1, B1 and the gain β F Modern Electronics: F3 Bipolar transistor 8
9 (A) Saturation Large Signal Model active mode base B B S e b F V V BE T b F B emitter collector V BE >0.6V V B <0.4V V E <V BR β F : current gain Kollektorström (A) Active ncreasing V BE ( B ) cutoff V BE < 0.6V V ce (V) Modern Electronics: F3 Bipolar transistor 9
10 Example typical Si P Transistor W B =0.5µm Emitter P Base ollector Area: 200µm 2 D = cm 3 D p =1 cm 2 /s (hole diffusion constant) L p =0.5µm (diffusion length) A = cm 3 D n =15 cm 2 /s (electron diffusion constant) τ b =1 µs (minority carrier lifetime) alculate S, b F Modern Electronics: F3 Bipolar transistor 10
11 n p (x), p n (x) 2 min excersise Early effect deally should not increase with V E, however the width of a reverse biased pnjunction depends on applied voltage! 1. How does the basecollector depletion region change for increasing V E? 2. Sketch the minority carrier distribution in the base with V E applied? 3. How does change with V E in this case? emitter P base collector x Modern Electronics: F3 Bipolar transistor 11
12 (A) Large Signal Model Early Effect base B collector b F B emitter Kollektorström (A) B S b V 1 V F S E A e V V BE T V 1 V b E F A e V V BE T V A Early voltage 15100V V ce (V) Modern Electronics: F3 Bipolar transistor 12
13 (A) Small Signals Taylor Expansion b (t)= B i b (t) B c (t)= i c (t) V BE v be (t) = V be (t) v be (t) E t V BE V E i c (t) = c (t) V be (t)=v BE v be (t) t Kollektorström (A) V ce (V) V ce (V) 1 st order Taylor expansion linearization f ( x x) f ( x ) df ( x) dx 0 0 xx V v V BE be V E vce V E vce Modern Electronics: F3 Bipolar transistor 13 BE g 1 r 0 m v be 0 x...
14 capacitances: µ, je, b emitter base collector b n V BE dv BE dq e V BE W B n p0 je µ W B x je, µ : depletion region (junction) capacitances (included only in more advanced model). b : diffusion (base charging) capacitance (only forward biased pnjunction). hange in V BE give change in charge in base (Q e ) > capacitance apacitances become important for highfrequencies b dq dv e BE... WB 2D 2 τ F : base transit time = average time for a carrier to cross base n g m F g m Modern Electronics: F3 Bipolar transistor 14
15 (simple) small Signal Model Active Mode B E v 1 g m v 1 r 0 r b Transconductance controls the current source g m V T remember: V T =kt/q nput resistance B change with V BE r b F g m Output resistance Early effect r 0 V A VA g V m T Diffusion (base charging) capacitance forward biased baseemitter junction b g F m Modern Electronics: F3 Bipolar transistor 15
16 Example low f model A BJT is biased so that =5mA. Low frequency > capacitances are open circuit Parameters: β F =500 V A =100 V V T =25.9 mv alculate B and the corresponding small signal model. B v 1 r g m v 1 r 0 Modern Electronics: F3 Bipolar transistor 16
17 Small Signal Model more advanced Add junction capacitances µ (basecollector junction) and je (baseemitter junction). π = je b. Add series resistances in emitter (r ex ), base (r b ) and collector (r c ). r b µ r c B v 1 r je b g m v 1 r 0 v be r ex E r b, r ex, r c, je and µ : Depends on exact transistor geometry. Modern Electronics: F3 Bipolar transistor 17
18 Summary BJTs P or PP. P is faster due to higher electron mobility Active mode (used for amplifiers): Emitterbase junction is forward biased (injects minority carriers into base) ollectorbase junction is reverse biased (removes minority carriers from base) Early effect: increasing V E extends the collectorbase depletion region narrowing the base resulting in a higher diffusion current. Small signal model: nput resistance (r π ) due change in base current ( B ) when changing V BE. Output resistance (r 0 ) due to Early effect. Base charging capacitance ( b ) due to change in charge in base region when changing V BE. an add more capacitances and resistances to get more accurate (and complicated) model. Modern Electronics: F3 Bipolar transistor 18
19 Stateofthe Art: SiGe Bipolar Transistor Emitter Base ollector V BR ~ 1.5V V ce,sat ~ 0.3V b F ~ 600 f t =300 GHz Modern Electronics: F3 Bipolar transistor 19
Bipolar Junction Transistors (BJT)
Bipolar Junction Transistors (BJT) deal Transistor Bipolar Transistor Terminals P Bipolar Transistor Physics Large Signal Model Early Effect Small Signal Model Reading: (Sedra, Smith, 7 th edition) 4.1
More informationPhysics of Bipolar Transistor
Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power
More informationBipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode Cutoff Active Saturation EBJ Reverse
More informationECE 310 Microelectronics Circuits
ECE 310 Microelectronics Circuits Bipolar Transistors Dr. Vishal Saxena (vishalsaxena@boisetstate.edu) Jan 20, 2014 Vishal Saxena 1 Bipolar Transistor n the chapter, we will study the physics of bipolar
More informationC H A P T E R 6 Bipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode EBJ CBJ Cutoff Reverse Reverse Active
More informationELEC 3908, Physical Electronics, Lecture 16. Bipolar Transistor Operation
ELEC 3908, Physical Electronics, Lecture 16 Bipolar Transistor Operation Lecture Outline Last lecture discussed the structure and fabrication of a double diffused bipolar transistor Now examine current
More informationBipolar Junction Transistors (BJTs) Overview
1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology
More informationBipolar Junction Transistor
ESE 211 / Spring 2011 / Lecture 10 Bipolar Junction Transistor Let us first consider general transconductance amplifier loaded with short circuit Transconductance Obviously, power supplies are needed for
More informationLecture (06) Bipolar Junction Transistor
Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One
More informationChapter 3: Bipolar Junction Transistors
Chapter 3: Bipolar Junction Transistors Transistor Construction There are two types of transistors: pnp npn pnp The terminals are labeled: E - Emitter B - Base C - Collector npn 2 Transistor Operation
More informationAnalog & Digital Electronics Course No: PH-218
Analog & Digital Electronics Course No: PH-218 Lec-5: Bipolar Junction Transistor (BJT) Course nstructors: Dr. A. P. VAJPEY Department of Physics, ndian nstitute of Technology Guwahati, ndia 1 Bipolar
More informationESE319 Introduction to Microelectronics BJT Intro and Large Signal Model
BJT Intro and Large Signal Model 1 VLSI Chip Manufacturing Process 2 0.35 mm SiGe BiCMOS Layout for RF (3.5 GHz) Two-Stage Power Amplifier Each transistor above is realized as net of four heterojunction
More informationCOE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline
COE/EE152: Basic Electronics Lecture 5 Andrew Selasi Agbemenu 1 Outline Physical Structure of BJT Two Diode Analogy Modes of Operation Forward Active Mode of BJTs BJT Configurations Early Effect Large
More informationDepartment of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
More informationChapter 4 Physics of Bipolar Transistors. EE105 - Spring 2007 Microelectronic Devices and Circuits. Structure and Symbol of Bipolar Transistor
EE105 - Spring 2007 Microelectronic Devices and ircuits Lecture 10 Bipolar ransistors hapter 4 Physics of Bipolar ransistors 4.1 General onsiderations 4.2 Structure of Bipolar ransistor 4.3 Operation of
More informationLecture 4. Reading: Chapter EE105 Spring 2008 Lecture 4, Slide 2 Prof. Wu, UC Berkeley. Structure and Symbol of Bipolar Transistor
Lecture 4 OULNE Bipolar Junction ransistor (BJ) General considerations Structure Operation in active mode Large signal model and characteristics ransconductance Small signal model he Early effect Reading:
More informationSingle-Stage BJT Amplifiers and BJT High-Frequency Model. Single-Stage BJT Amplifier Configurations
1 Single-Stage BJT Amplifiers and BJT High-Frequency Model Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s
More informationLecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
More informationLecture 12. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week
More informationECE321 Electronics I Fall 2006
ECE321 Electronics I Fall 2006 Professor James E. Morris Lecture 11 31 st October, 2006 Bipolar Junction Transistors (BJTs) 5.1 Device Structure & Physics 5.2 I-V Characteristics Convert 5.1 information
More informationBipolar Junction Transistors
Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal
More information5.1 BJT Device Structure and Physical Operation
11/28/2004 section 5_1 BJT Device Structure and Physical Operation blank 1/2 5.1 BJT Device Structure and Physical Operation Reading Assignment: pp. 377-392 Another kind of transistor is the Bipolar Junction
More informationLecture 4. Reading: Chapter EE105 Fall 2007 Lecture 4, Slide 1 Prof. Liu, UC Berkeley
Lecture 4 OUTLNE Bipolar Junction Transistor (BJT) General considerations Structure Operation in active mode Large-signal model and - characteristics Reading: Chapter 4.1-4.4.2 EE105 Fall 2007 Lecture
More informationMOS Field-Effect Transistors (MOSFETs)
6 MOS Field-Effect Transistors (MOSFETs) A three-terminal device that uses the voltages of the two terminals to control the current flowing in the third terminal. The basis for amplifier design. The basis
More informationTHE METAL-SEMICONDUCTOR CONTACT
THE METAL-SEMICONDUCTOR CONTACT PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider
More informationTutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers
Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.
More informationElectronics EECE2412 Spring 2017 Exam #2
Electronics EECE2412 Spring 2017 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 30 March 2017 File:12198/exams/exam2 Name: : General Rules:
More informationChapter 4 DC Biasing BJTs. BJTs
hapter 4 D Biasing BJTs BJTs Biasing Biasing: The D voltages applied to a transistor in order to turn it on so that it can amplify the A signal. Operating Point The D input establishes an operating or
More informationCO2005: Electronics I. Transistor (BJT) Electronics I, Neamen 3th Ed. 1
O2005: Electronics The Bipolar Junction Transistor (BJT) Electronics, Neamen 3th Ed. 1 Bipolar Transistor Structures N P 17 10 N D 19 10 N D 15 10 Electronics, Neamen 3th Ed. 2 Forward-Active Mode in the
More informationEE 330 Lecture 18. Characteristics of Finer Feature Size Processes. Bipolar Process
330 Lecture 18 haracteristics of Finer Feature Size Processes ipolar Process How does the inverter delay compare between a 0.5u process and a 0.13u process? DD IN OUT IN OUT SS How does the inverter
More informationBipolar Junction Transistor (BJT) Basics- GATE Problems
Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =
More informationLecture (08) Bipolar Junction Transistor (2)
Lecture (08) ipolar Junction Transistor (2) y: Dr. Ahmed lshafee 1 JT haracteristic ollector haracteristic urves 2 Applying fixed V, increasing V Saturation Assume that V is set to produce a certain value
More informationBipolar junction transistors.
Bipolar junction transistors. Third Semester Course code : 15EECC202 Analog electronic circuits (AEC) Team: Dr. Nalini C Iyer, R.V. Hangal, Sujata N, Prashant A, Sneha Meti AEC Team, Faculty, School of
More informationElectronics I - Physics of Bipolar Transistors
Chapter 5 Electronics I - Physics of Bipolar Transistors B E N+ P N- C B E C Fall 2017 claudio talarico 1 source: Sedra & Smith Thin Base Types of Bipolar Transistors n+ p n- Figure - A simplified structure
More informationThe shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect
Diode as Clamper A clamping circuit is used to place either the positive or negative peak of a signal at a desired level. The dc component is simply added or subtracted to/from the input signal. The clamper
More informationElectronic Circuits - Tutorial 07 BJT transistor 1
Electronic Circuits - Tutorial 07 BJT transistor 1-1 / 20 - T & F # Question 1 A bipolar junction transistor has three terminals. T 2 For operation in the linear or active region, the base-emitter junction
More informationChapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
More informationElectronics Review Flashcards
November 21, 2011 1 Op Amps 2 Diodes 3 Silicon 4 pn Junctions 5 BJTs 6 MOSFETs Open Loop Characteristics Open-Loop Op-Amp Characteristics (first-order model) Closed Loop Characteristics Closed-Loop Op-Amp
More informationElectronics Fundamentals BIPOLAR TRANSISTORS. Construction, circuit symbols and biasing examples for NPN and PNP junction transistors.
IPOLA TANSISTOS onstruction, circuit symbols and biasing examples for NPN and PNP junction transistors Slide 1 xternal bias voltages create an electric field, which pulls electrons (emitted into the base
More informationAlexandria University Faculty of Engineering Electrical Engineering Department
Chapter 10: Alexandria University Faculty of Engineering Electrical Engineering Department ECE 336: Semiconductor Devices Sheet 6 1. A Si pnp BJT with N AE = 5x10 17 / cm 3, N DB = 10 15 /cm 3 and N AC
More informationCHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis
More informationLecture Course. SS Module PY4P03. Dr. P. Stamenov
Semiconductor Devices - 2013 Lecture Course Part of SS Module PY4P03 Dr. P. Stamenov School of Physics and CRANN, Trinity College, Dublin 2, Ireland Hilary Term, TCD 01 st of Feb 13 Diode Current Components
More informationECE 440 Lecture 29 : Introduction to the BJT-I Class Outline:
ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline: Narrow-Base Diode BJT Fundamentals BJT Amplification Things you should know when you leave Key Questions How does the narrow-base diode multiply
More informationProf. Paolo Colantonio a.a
Prof. Paolo olantonio a.a. 2011 12 ipolar transistors are one of the main building blocks in electronic systems They are used in both analogue and digital circuits They incorporate two pn junctions and
More informationCommunication Microelectronics (W17)
Communication Microelectronics (W17) Lecture 4: Bipolar Junction Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Bipolar Junction Transistor (BJT) Physical Structure and I-V
More informationEE 330 Lecture 16. Comparison of MOS Processes Bipolar Process
330 Lecture 16 omparison of MOS Processes ipolar Process Review from last lecture P-Select Mask p-diffusion p-diffusion A-A Section Note the gate is self aligned!! - Section Review from last lecture n-select
More informationGeorgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
More informationBipolar Junction Transistor (BJT)
Bipolar Junction Transistor (BJT) - three terminal device - output port controlled by current flow into input port Structure - three layer sandwich of n-type and p-type material - npn and pnp transistors
More informationECE 442 Solid State Devices & Circuits. 6. Bipolar Transistors
ECE 442 Solid State Devices & Circuits 6. Bipolar Transistors Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 342 Jose Schutt Aine 1 Bipolar Junction
More information6.012 Microelectronic Devices and Circuits
Page 1 of 13 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Microelectronic Devices and Circuits Final Eam Closed Book: Formula sheet provided;
More informationLecture 16. The Bipolar Junction Transistor (I) Forward Active Regime. Outline. The Bipolar Junction Transistor (BJT): structure and basic operation
Lecture 16 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I-V characteristics in forward active regime Reading Assignment:
More informationET215 Devices I Unit 4A
ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NPN Bipolar Junction Transistor (BJT)
EE105 Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 utardja Dai Hall (DH) 1 NPN Bipolar Junction Transistor (BJT) Forward Bias Reverse Bias Hole Flow Electron
More informationEE 330 Lecture 19. Bipolar Devices
330 Lecture 19 ipolar Devices Review from last lecture n-well n-well n- p- Review from last lecture Metal Mask A-A Section - Section Review from last lecture D A A D Review from last lecture Should now
More informationECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model
Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand
More informationLecture 4. Accurate Bipolar Representation. Forward Active Region. Structure and Symbol of Bipolar Transistor
Lecture 4 Structure and Symbol of ipolar ransistor OULNE ipolar Junction ransistor (J) General considerations Structure Operation in active mode Large signal model and characteristics ransconductance Small
More informationdc Bias Point Calculations
dc Bias Point Calculations Find all of the node voltages assuming infinite current gains 9V 9V 10kΩ 9V 100kΩ 1kΩ β = 270kΩ 10kΩ β = 1kΩ 1 dc Bias Point Calculations Find all of the node voltages assuming
More informationEIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices
EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationEE 434 Lecture 21. MOS Amplifiers Bipolar Devices
434 ecture MOS Amplifiers ipolar Devices Quiz 3 The quiescent voltage across the 5K resistor in the circuit shown was measured to be 3. ) Determine the quiescent output voltage ) Determine the small signal
More informationITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections
ITT Technical Institute ET215 Devices 1 Unit 6 Chapter 3, Sections 3.7-3.9 Chapter 3 Section 3.7 The Bipolar Transistor as a Switch Objectives: Explain how a transistor can be used as a switch 1. Compute
More informationBJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1
BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which
More informationR a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)
SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave
More informationReg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
More informationReview Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination
Review Energy Bands Carrier Density & Mobility Carrier Transport Generation and Recombination Current Transport: Diffusion, Thermionic Emission & Tunneling For Diffusion current, the depletion layer is
More informationEJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre
EJECICIOS DE COMPONENTES ELECTÓNICOS. 1 er cuatrimestre 2 o Ingeniería Electrónica Industrial Juan Antonio Jiménez Tejada Índice 1. Basic concepts of Electronics 1 2. Passive components 1 3. Semiconductors.
More informationIntroduction to semiconductor technology
Introduction to semiconductor technology Outline 7 Field effect transistors MOS transistor current equation" MOS transistor channel mobility Substrate bias effect 7 Bipolar transistors Introduction Minority
More informationSection 2.3 Bipolar junction transistors - BJTs
Section 2.3 Bipolar junction transistors - BJTs Single junction devices, such as p-n and Schottkty diodes can be used to obtain rectifying I-V characteristics, and to form electronic switching circuits
More informationChapter 3. Bipolar Junction Transistors
Chapter 3. Bipolar Junction Transistors Outline: Fundamental of Transistor Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Introduction The transistor is a three-layer
More informationCelso José Faria de Araújo, M.Sc.
elso José Faria de Araújo, M.Sc. TH IPOLA JUNTION TANSISTOS - JT Objecties: Understand the basic principles of JT operation Interpret the transport model Identify operating regions of the JT and use simplified
More informationการไบอ สทรานซ สเตอร. Transistors Biasing
การไบอ สทรานซ สเตอร Transistors iasing iasing iasing: Applying D voltages to a transistor in order to turn it on so that it can amplify A signals. The D input establishes an operating or quiescent point
More informationStructure of Actual Transistors
4.1.3. Structure of Actual Transistors Figure 4.7 shows a more realistic BJT cross-section Collector virtually surrounds entire emitter region This makes it difficult for electrons injected into base to
More informationFYSE400 ANALOG ELECTRONICS
7.9.016 YS400 ANALOG LTONS LTU 1 ntroduction to ipolar Junction Transistor ircuits 1 NTODUTON The deal urrent-controlled urrent Source efore the detailed analyzation of transistor operation, we should
More informationMicroelectronic Circuits, Kyung Hee Univ. Spring, Bipolar Junction Transistors
Bipolar Junction Transistors 1 Introduction physical structure of the bipolar transistor and how it works How the voltage between two terminals of the transistor controls the current that flows through
More informationNPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
More informationSEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET
SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change
More informationAnalog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.
Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the
More informationECEN 325 Lab 7: Characterization and DC Biasing of the BJT
ECEN 325 Lab 7: Characterization and DC Biasing of the BJT 1 Objectives The purpose of this lab is to characterize NPN and PNP bipolar junction transistors (BJT), and to analyze and design DC biasing circuits
More informationชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร
EN2042102 วงจรไฟฟ าและอ เล กทรอน กส Circuits and Electronics บทท 7 ทรานซ สเตอร Bipolar Junction Transistor สาขาว ชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร Objectives Describe
More informationExercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)
Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship
More informationBJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
More informationFigure1: Basic BJT construction.
Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).
More information(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
More informationI C I E =I B = I C 1 V BE 0.7 V
Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics
More informationLaboratory #5 BJT Basics and MOSFET Basics
Laboratory #5 BJT Basics and MOSFET Basics I. Objectives 1. Understand the physical structure of BJTs and MOSFETs. 2. Learn to measure I-V characteristics of BJTs and MOSFETs. II. Components and Instruments
More informationUnless otherwise specified, assume room temperature (T = 300 K).
ECE 3040 Dr. Doolittle Homework 4 Unless otherwise specified, assume room temperature (T = 300 K). 1) Purpose: Understanding p-n junction band diagrams. Consider a p-n junction with N A = 5x10 14 cm -3
More information4.1.3 Structure of Actual Transistors
4.1.3 Structure of Actual Transistors Figure 4.7 shows a more realistic BJT cross-section Collector virtually surrounds entire emitter region This makes it difficult for electrons injected into base to
More informationESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier
High Frequency BJT Model & Cascode BJT Amplifier 1 Gain of 10 Amplifier Non-ideal Transistor C in R 1 V CC R 2 v s Gain starts dropping at > 1MHz. Why! Because of internal transistor capacitances that
More informationEXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT
EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current
More informationTransistors. Bipolar Junction transistors Principle of operation Characteristics. Field effect transistors Principle of operation Characteristics
Transistors ipolar Junction transistors Principle of operation haracteristics Field effect transistors Principle of operation haracteristics ntroduction Radio based on vacuum tubes Fundamental building
More informationDiode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!
Diodes: What do we use diodes for? Lecture 5: Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double
More informationUNIT-III Bipolar Junction Transistor
DC UNT-3.xplain the construction and working of JT. UNT- ipolar Junction Transistor A bipolar (junction) transistor (JT) is a three-terminal electronic device constructed of doped semiconductor material
More informationLaboratory exercise: the Bipolar Transistor
Laboratory exercise: the Bipolar Transistor Semiconductor Physics 2014 Lab meeting point k-space at Solid State Physics This exercise consists of two experimental parts and one simulation part. In the
More informationDEPARTMENT OF ELECTRONICS AGH UST LABORATORY OF ELECTRONICS ELEMENTS SMALL-SIGNAL PARAMETERS OF BIPOLAR JUNCTION TRANSISTORS REV. 1.
DEPARTMENT OF ELECTRONICS AGH UST LABORATORY OF ELECTRONICS ELEMENTS SMALL-SIGNAL PARAMETERS OF BIPOLAR JUNCTION TRANSISTORS REV. 1.0 1. THE GOAL OF THE EXERCISE - to get acquainted with measurement methods
More informationCOMPARISON OF THE MOSFET AND THE BJT:
COMPARISON OF THE MOSFET AND THE BJT: In this section we present a comparison of the characteristics of the two major electronic devices: the MOSFET and the BJT. To facilitate this comparison, typical
More informationCHAPTER 3 THE BIPOLAR JUNCTION TRANSISTOR (BJT)
HAPT 3 TH IPOLA JUNTION TANSISTO (JT) 1 In this chapter, we will: JT Discuss the physical structure and operation of the bipolar junction transistor. Understand the dc analysis of bipolar transistor circuits.
More information7. Bipolar Junction Transistor
41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor
More informationWhen you have completed this exercise, you will be able to determine the ac operating characteristics of
When you have completed this exercise, you will be able to determine the ac operating characteristics of multimeter and an oscilloscope. A sine wave generator connected between the transistor and ground
More informationTransistor electronic technologies
Transistor electronic technologies Bipolar Junction Transistor discrete or integrated circuit discrete = individual component MOS (Metal-Oxide-Silicon) Field Effect Transistor mainly used in integrated
More informationEEE118: Electronic Devices and Circuits
EEE118: Electronic Devices and Circuits Lecture XI James E Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Review Review Introduced the idea of a dynamic resistance
More informationEE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02
EE 5611 Introduction to Microelectronic Technologies Fall 2014 Thursday, September 04, 2014 Lecture 02 1 Lecture Outline Review on semiconductor materials Review on microelectronic devices Example of microelectronic
More information