Bipolar Junction Transistors (BJT)

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1 Bipolar Junction Transistors (BJT) deal Transistor Bipolar Transistor Terminals P Bipolar Transistor Physics Large Signal Model Early Effect Small Signal Model Reading: (Sedra, Smith, 7 th edition) (small signal model) small signal model with capcitances Modern Electronics: F3 Bipolar transistor 1

2 deal Transistor characteristics current source controlled by a voltage (V in ) out V in in kv in out V out ncreasing V in Two main transistor types: Bipolar Transistors (Power Amplifiers, HighSpeed AD/DA converters) Field Effect Transistors (99.999% mainly integrated circuits / digital) out independent of V out! in independent of V out! V out Modern Electronics: F3 Bipolar transistor 2

3 Bipolar Transistor npn Collector Sign convention: V xy =V x V y V BC C Base B base current B V BE E V CE C collector current E emitter Current = ( C B ) Emitter Modern Electronics: F3 Bipolar transistor 3

4 Bipolar Transistor npn in active mode Emitter P Base Collector npn V BE >0 Forward biased P junction V BC <0 Reverse biased P junction Modern Electronics: F3 Bipolar transistor 4

5 Bipolar transistor: band structure n=n po exp(v BE /V T ) n 0 E B C P E Fn ev BE C B Forward biased emitterbase junction injects electrons Reverse biased basecollector junction sweeps away electrons (independent of V BC ) Modern Electronics: F3 Bipolar transistor 5

6 Operating modes Unbiased P Cutoff EBJ: reverse / CBJ: reverse emitter base collector Active EBJ: forward / CBJ: reverse Saturation EBJ: forward / CBJ: forward Modern Electronics: F3 Bipolar transistor 6

7 Electron diffusion currents active mode C ncreasing V BE ncreasing V CE V CE Modern Electronics: F3 Bipolar transistor 7

8 Currents in active mode E B1 B2 C = 0 E Emitter P Base Collector C B2 B1 B V BE >0 V BC <0 On whiteboard: calculate C, B1, B2 and the gain β Modern Electronics: F3 Bipolar transistor 8

9 C (A) Saturation Large Signal Model active mode base C B B S b C e F V V BE T b F B emitter collector V BE > 0.6V V BC < 0.4V V CE < V BR C β : current gain Kollektorström (A) Active ncreasing V BE ( B ) cutoff V BE < 0.6V V ce (V) Modern Electronics: F3 Bipolar transistor 9

10 Example typical Si P Transistor W B =0.5µm Emitter P Base Collector Area: 200µm 2 D = cm 3 (emitter doping) D p =1 cm 2 /s (hole diffusion constant) L p =0.5µm (diffusion length) A = cm 3 (base doping) D n =15 cm 2 /s (electron diffusion constant) τ b =1 µs (minority carrier lifetime) Calculate b and S Modern Electronics: F3 Bipolar transistor 10

11 n p (x), p n (x) 2 min excersise Early effect (4.2.3) deally C should not increase with V CE, however the width of a pnjunction depends on applied voltage! 1. How does the basecollector depletion region change for increasing V CE? 2. Sketch the minority carrier distribution in the base with V CE applied? 3. How does C change with V CE in this case? emitter P base collector x Modern Electronics: F3 Bipolar transistor 11

12 C (A) Large Signal Model Early Effect (4.2.3) base B collector C b F B emitter Kollektorström (A) C B S C b V 1 V F S CE A e V V BE T V 1 V b CE F A e V V BE T V A Early voltage 15100V V ce (V) Modern Electronics: F3 Bipolar transistor 12

13 C (A) Small Signals Taylor Expansion i B (t)= B i b (t) B C i C (t)= C i c (t) V BE v be (t) = v BE (t) v be (t) E t V BE V CE C i c (t) = i C (t) v BE (t)=v BE v be (t) t Kollektorström (A) V ce (V) V CE (V) 1 st order Taylor expansion linearization df ( x) f ( x0 x) f ( x0) x... dx i C i C V v V BE be V CE vce C V CE vce xx Modern Electronics: F3 Bipolar transistor 13 i C i C BE g 1 r 0 m v be 0

14 capacitances: C µ, C je, C de (9.2.2 (partially)) emitter base collector C de n V BE dv BE dq n V BE W B n p0 C je C µ W B x C je, C µ : junction capacitances (small). C de : diffusion (base charging) capacitance (only forward biased pnjunction). Change in V BE give change in charge in base (Q n ) > capacitance Capacitances become important for highfrequencies C de = dq n dv BE = τ F di C dv BE = τ F g m τ F : base transit time, average time for a carrier to cross base τ F = W B2 /2D n Modern Electronics: F3 Bipolar transistor 14

15 (simple) small Signal Model Active Mode B C v 1 g m v 1 r 0 r p C de E Transconductance controls the current source g m V C T Remember: V T =kt/q nput resistance B change with V BE r p b F g m Output resistance Early effect Diffusion (base charging) capacitance forward biased BE junction r 0 V C de = τ F g m C g b Modern Electronics: F3 Bipolar transistor 15 A C F m VA g V m T

16 Example low f model A BJT is biased so that C =5mA. Low frequency > capacitances are open circuit Parameters: β = 500 V A = 100 V V T = 25.9 mv B C Calculate B and the corresponding small signal model. v 1 r p g m v 1 r 0 Modern Electronics: F3 Bipolar transistor 16

17 Small Signal Model more advanced Add junction capacitances C µ (BC junction) and C je (BE junction). Sum capacitances C π =C je C de. Add series resistances in base (r x ). C p C µ B r x v 1 r p C je C de g m v 1 r 0 C E r x, C je and C µ : Depends on exact transistor geometry. Modern Electronics: F3 Bipolar transistor 17

18 Summary BJTs P or PP. P is faster due to higher electron mobility Active mode (used for amplifiers): Emitterbase junction is forward biased (injects minority carriers into base) Collectorbase junction is reverse biased (removes minority carriers from base) Early effect: increasing V CE extends the collectorbase depletion region narrowing the base resulting in a higher diffusion current C. Small signal model: nput resistance (r π ) due change in base current ( B ) when changing V BE. Output resistance (r 0 ) due to Early effect. Base charging capacitance (C de ) due to change in charge in base region when changing V BE. Can add more capacitances and resistances to get more accurate (and complicated) model. Modern Electronics: F3 Bipolar transistor 18

19 Stateofthe Art: SiGe Bipolar Transistor Vertical device ot symmetric high emitter doping, lower in collector Heterostructure with graded E g to enable high dopning in base (low resistance) without backinjection into emitter. Collector Emitter Base V BR ~ 1.5V V ce,sat ~ 0.3V b F ~ 600 f t =300 GHz Modern Electronics: F3 Bipolar transistor 19

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