Radiation-Hardness of VCSEL/PIN Arrays
|
|
|
- Easter Eaton
- 5 years ago
- Views:
Transcription
1 Radiation-Hardness of VCSEL/PIN Arrays A. Adair, W. Fernando,, H.P. Kagan, R.D. Kass, H. Merritt, J. Moore, A. Nagarkar, S. Smith, M. Strang The Ohio State University M.R.M. Lebbai, P.L. Skubic University of Oklahoma B. Abi, F. Rizatdinova Oklahoma State University March 4,
2 Outline Introduction Radiation hardness of VCSELs Radiation hardness of PINs Summary 2
3 2009 Irradiation After 3 years of irradiating ~2 samples/device with 24 GeV protons at CERN, the following arrays are identified as most promising: 10 Gb/s AOC VCSEL array irradiate 6 AOC arrays in 2009 (limited by vendor problem) Optowell PIN array irradiate 20 Optowell arrays in
4 AOC 10 Gb/s VCSEL 7.5 x MeV n eq /cm 2 w/o long twisted/ coiled fiber Reasonable optical power for 6 arrays irradiated slow recovery of optical power during annealing " need to irradiate a sample of 20 arrays in
5 VCSEL Threshold/Slope Fitting Fit LI curve to 2 nd order polynomials compare threshold and slope (1 st order) vs dosage etc. 5
6 VCSEL Thresholds Thresholds increase after irradiation as expected 6
7 VCSEL Power vs Temperature 7.5 x MeV n eq /cm 2 Cooler VCSEL produces more optical power 7
8 VCSEL Slope Slopes of irradiated VCSEL is similar to non-irradiated VCSEL Slopes decrease with increasing temperature 8
9 PIN Responsivity after Irradiation 8.1 x MeV n eq /cm x MeV n eq /cm 2 PIN arrays were irradiated in two batches of 10 arrays each Beam alignments were different for the two batches Different degradation in responsivity for the two batches 9
10 PIN Responsivity vs Dosage the two batches have different responsivity vs dosage based on naive assumption of linear proton flux vs channel number 10
11 Responsivity (A/W) PIN Responsivity vs Temperature Optowell Pre-Irrad (By hand) Post-Irrad (-25 C) Post-Irrad (room) Post-Irrad (10 C) Post-Irrad (50 C) Post-Irrad Fit 8.1 x MeV n eq /cm Channel Responsivity is slightly higher at lower temperature VCSEL and PIN have similar temperature dependence 11
12 PIN Responsivity vs Bias Voltage can fully recover pre-irradiation responsivity with high bias voltage 12
13 PIN Current vs Bias Voltage Optowell Room temp -25 C 10 C 50 C 1 st run 2 nd run 0 V 40 V Sudden breakdown in PIN current during ramping of bias voltage Once broken, entire array has high leakage current even at low voltages 13
14 PIN Leakage Current Problem Three out of 20 irradiated Optowell PIN arrays are now inoperable due to high leakage current Cause of breakdown unknown: devices are not actually capable of operation at 40V as claimed by vendor? did radiation damage reduce the operation voltage? Recovery plan: need to purchase/package a large sample of Optowell arrays (> 20) for bias current study followed by irradiation in summer 2010 communicate with vendor need to purchase/package a large sample of arrays (> 20) from a second vendor (ULM) for irradiation in summer
15 Summary AOC VCSEL arrays have reasonable power after irradiation plan to irradiate 20 arrays in 2010 Optowell PIN arrays have good responsivity after irradiation 3 out of 20 Optowell PIN arrays broken need further investigation and second vendor VCSEL and PIN have similar temperature dependence good to operate the devices at room temperature or lower 15
Radiation-Hard Optical Link for SLHC
Radiation-Hard Optical Link for SLHC W. Fernando, K.K. Gan, A. Law, H.P. Kagan, R.D. Kass, A. Rau, S. Smith The Ohio State University M.R.M. Lebbai, P.L. Skubic University of Oklahoma B. Abi, F. Rizatdinova
Study of the radiation-hardness of VCSEL and PIN
Study of the radiation-hardness of VCSEL and PIN 1, W. Fernando, H.P. Kagan, R.D. Kass, H. Merritt, J.R. Moore, A. Nagarkara, D.S. Smith, M. Strang Department of Physics, The Ohio State University 191
STUDY OF THE RADIATION HARDNESS OF VCSEL AND PIN ARRAYS
STUDY OF THE RADIATION HARDNESS OF VCSEL AND PIN ARRAYS K.K. GAN, W. FERNANDO, H.P. KAGAN, R.D. KASS, A. LAW, A. RAU, D.S. SMITH Department of Physics, The Ohio State University, Columbus, OH 43210, USA
Radiation-hard/high-speed data transmission using optical links
Radiation-hard/high-speed data transmission using optical links K.K. Gan a, B. Abi c, W. Fernando a, H.P. Kagan a, R.D. Kass a, M.R.M. Lebbai b, J.R. Moore a, F. Rizatdinova c, P.L. Skubic b, D.S. Smith
Optical Link of the ATLAS Pixel Detector
Optical Link of the ATLAS Pixel Detector K.K. Gan The Ohio State University October 20, 2005 W. Fernando, K.K. Gan, P.D. Jackson, M. Johnson, H. Kagan, A. Rahimi, R. Kass, S. Smith The Ohio State University
High-Speed/Radiation-Hard Optical Links
High-Speed/Radiation-Hard Optical Links K.K. Gan, H. Kagan, R. Kass, J. Moore, D.S. Smith The Ohio State University P. Buchholz, S. Heidbrink, M. Vogt, M. Ziolkowski Universität Siegen September 8, 2016
10 Gb/s Radiation-Hard VCSEL Array Driver
10 Gb/s Radiation-Hard VCSEL Array Driver K.K. Gan 1, H.P. Kagan, R.D. Kass, J.R. Moore, D.S. Smith Department of Physics The Ohio State University Columbus, OH 43210, USA E-mail: gan@mps.ohio-state.edu
OPTICAL LINK OF THE ATLAS PIXEL DETECTOR
OPTICAL LINK OF THE ATLAS PIXEL DETECTOR K.K. Gan, W. Fernando, P.D. Jackson, M. Johnson, H. Kagan, A. Rahimi, R. Kass, S. Smith Department of Physics, The Ohio State University, Columbus, OH 43210, USA
Radiation-hard ASICs for Optical Data Transmission in the ATLAS Pixel Detector
Radiation-hard ASICs for Optical Data Transmission in the ATLAS Pixel Detector P. D. Jackson 1, K.E. Arms, K.K. Gan, M. Johnson, H. Kagan, A. Rahimi, C. Rush, S. Smith, R. Ter-Antonian, M.M. Zoeller Department
Quality Assurance for the ATLAS Pixel Sensor
Quality Assurance for the ATLAS Pixel Sensor 1st Workshop on Quality Assurance Issues in Silicon Detectors J. M. Klaiber-Lodewigs (Univ. Dortmund) for the ATLAS pixel collaboration Contents: - role of
Radiation-Hard Optical Link in the ATLAS Pixel Detector
Radiation-Hard Optica Link in the ATLAS Pixe Detector K.K. Gan The Ohio State University August 18, 2004 K.E. Arms, K.K. Gan, M. Johnson, H. Kagan, R. Kass, A. Rahimi, C. Rush, S. Smith, R. Ter-Antonian,
Geiger-mode APDs (2)
(2) Masashi Yokoyama Department of Physics, University of Tokyo Nov.30-Dec.4, 2009, INFN/LNF Plan for today 1. Basic performance (cont.) Dark noise, cross-talk, afterpulsing 2. Radiation damage 2 Parameters
ATLAS Pixel Opto-Electronics
ATLAS Pixel Opto-Electronics K.E. Arms, K.K. Gan, P. Jackson, M. Johnson, H. Kagan, R. Kass, A.M. Rahimi, C. Rush, S. Smith, R. Ter-Antonian, M.M. Zoeller Department of Physics, The Ohio State University,
Sensor production readiness
Sensor production readiness G. Bolla, Purdue University for the USCMS FPIX group PMG review 02/25/2005 2/23/2005 1 Outline Sensor requirements Geometry Radiation hardness Development Guard Rings P stops
Time Resolved Studies of Single Event Upset in Optical Data Receiver for the ATLAS Pixel Detector
in Optical Data Receiver for the ATLAS Pixel Detector M. Ziolkowski1 Universität Siegen Fachbereich Physik, D 57068 Siegen, Germany E mail: michael.ziolkowski@uni siegen.de P. Buchholz Universität Siegen
Monitoring LSO/LYSO Based Crystal Calorimeters
Monitoring LSO/LYSO Based Crystal Calorimeters Fan Yang, Liyuan Zhang, Ren-Yuan Zhu California Institute of Technology June 11, 2015 See also papers O6-5, O7-2, O12-2, O12-3 and O12-4 O12-1, SCINT2015,
AVALANCHE PHOTODIODES FOR THE CMS ELECTROMAGNETIC CALORIMETER
AVALANCHE PHOTODIODES FOR THE CMS ELECTROMAGNETIC CALORIMETER B. Patel, R. Rusack, P. Vikas(email:Pratibha.Vikas@cern.ch) University of Minnesota, Minneapolis, U.S.A. Y. Musienko, S. Nicol, S.Reucroft,
Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24GeV Proton Exposure
Santa Cruz Institute for Particle Physics Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24GeV Proton Exposure, D.E. Dorfan, A. A. Grillo, M Rogers, H. F.-W. Sadrozinski,
Prototype Performance and Design of the ATLAS Pixel Sensor
Prototype Performance and Design of the ATLAS Pixel Sensor F. Hügging, for the ATLAS Pixel Collaboration Contents: - Introduction - Sensor Concept - Performance fi before and after irradiation - Conclusion
CMS Beam Condition Monitoring Wim de Boer, Hannes Bol, Alexander Furgeri, Steffen Muller
CMS Beam Condition Monitoring Wim de Boer, Hannes Bol, Alexander Furgeri, Steffen Muller BCM2 8diamonds BCM1 8diamonds each BCM2 8diamonds Beam Condition Monitoring at LHC BCM at LHC is done by about 3700
The Versatile Transceiver Proof of Concept
The Versatile Transceiver Proof of Concept J. Troska, S.Detraz, S.Papadopoulos, I. Papakonstantinou, S. Rui Silva, S. Seif el Nasr, C. Sigaud, P. Stejskal, C. Soos, F.Vasey CERN, 1211 Geneva 23, Switzerland
Monolithic Pixel Sensors in SOI technology R&D activities at LBNL
Monolithic Pixel Sensors in SOI technology R&D activities at LBNL Lawrence Berkeley National Laboratory M. Battaglia, L. Glesener (UC Berkeley & LBNL), D. Bisello, P. Giubilato (LBNL & INFN Padova), P.
Review of Silicon Inner Tracker
Review of Silicon Inner Tracker H.J.Kim (KyungPook National U.) Talk Outline Configuration optimization of BIT and FIT Silicon Sensor R&D Electronics R&D Summary and Plan Detail study will be presented
F. Hartmann. IEKP - Universität Karlsruhe (TH) IEKP - Universität Karlsruhe (TH)
Results on proton irradiation tests in Karlsruhe p do Bulk & Surface Damage Strip parameters after irrad. V FD for (300µm) and 500µm sensors after 10 years LHC Expectedpower for500 µm sensors after 10
CMS Tracker Upgrade for HL-LHC Sensors R&D. Hadi Behnamian, IPM On behalf of CMS Tracker Collaboration
CMS Tracker Upgrade for HL-LHC Sensors R&D Hadi Behnamian, IPM On behalf of CMS Tracker Collaboration Outline HL-LHC Tracker Upgrade: Motivations and requirements Silicon strip R&D: * Materials with Multi-Geometric
Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction Bipolar Transistors Under Radiation Exposure
1 Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction Bipolar Transistors Under Radiation Exposure J. Metcalfe, D. E. Dorfan, A. A. Grillo, A. Jones, F. Martinez-McKinney,
Frank.Hartmann@CERN.CH 03.02.2012 Content & Disclaimer Different Strategies FLUKA Leakage currents Depletion Voltage Each experiment is following the same goal but with slightly different strategies An
31th March 2017, Annual ILC detector meeting Tohoku University Shunsuke Murai on behalf of FPCCD group
31th March 2017, Annual ILC detector meeting Tohoku University Shunsuke Murai on behalf of FPCCD group 1 Introduction Vertex detector FPCCD Radiation damage Neutron irradiation test Measurement of performance
FACTOR: first results on SiPM characterization
FACTOR: first results on SiPM characterization Valter Bonvicini INFN Trieste OUTLINE: 1. Motivations and program of the FACTOR project 2. Types of devices tested, measurements performed and set-up used
GaN-based Schottky diodes for EUV/VUV/UV photodetection
1 GaN-based Schottky diodes for EUV/VUV/UV photodetection F. Shadi Shahedipour-Sandvik College of Nanoscale Science and Engineering University at Albany - SUNY, Albany NY 12203 cnse.albany.edu sshahedipour@uamail.albany.edu
Study the Compact Photon Source Radiation Using FLUKA
Study the Compact Photon Source Radiation Using FLUKA Jixie Zhang, Donal Day, Rolf Ent Nov 30, 2017 This is a summary of radiation studies done for both the UVa target alone (for electron and photon beams)
VCSEL SENSOR FLAT WINDOW TO CAN
DATA SHEET VCSEL SENSOR FLAT WINDOW TO CAN SV3637-001 FEATURES: Designed for low drive currents between 7 and 15mA Flat Window TO-46 style package High speed 1 Ghz The SV3637 combines many of the desired
Why p-type is better than n-type? or Electric field in heavily irradiated silicon detectors
Why p-type is better than n-type? or Electric field in heavily irradiated silicon detectors G.Kramberger, V. Cindro, I. Mandić, M. Mikuž, M. Milovanović, M. Zavrtanik Jožef Stefan Institute Ljubljana,
Studies of Scintillator Tile Geometries for direct SiPM Readout of Imaging Calorimeters
Studies of Scintillator Tile Geometries for direct SiPM Readout of Imaging Calorimeters Frank Simon MPI for Physics & Excellence Cluster Universe Munich, Germany for the CALICE Collaboration Outline The
ATLAS Upgrade SSD. ATLAS Upgrade SSD. Specifications of Electrical Measurements on SSD. Specifications of Electrical Measurements on SSD
ATLAS Upgrade SSD Specifications of Electrical Measurements on SSD ATLAS Project Document No: Institute Document No. Created: 17/11/2006 Page: 1 of 7 DRAFT 2.0 Modified: Rev. No.: 2 ATLAS Upgrade SSD Specifications
1310NM FP LASER FOR 10GBASE-LRM SC AND LC TOSA
DATA SHEET 1310NM FP LASER FOR 10GBASE-LRM SC AND LC TOSA FP-1310-10LRM-X FEATURES: 1310nm FP laser Very low power dissipation SC and LC optical receptacles 10Gbps direct modulation Impedance matching
Pixel characterization for the ITS/MFT upgrade. Audrey Francisco
Pixel characterization for the ITS/MFT upgrade Audrey Francisco QGP France, Etretat, 14/10/2015 Outline 1 The MFT upgrade 2 Pixel sensor Technology choice Full scale prototypes 3 Characterization campaign
The CMS Pixel Detector Upgrade and R&D Developments for the High Luminosity LHC
The CMS Pixel Detector Upgrade and R&D Developments for the High Luminosity LHC On behalf of the CMS Collaboration INFN Florence (Italy) 11th 15th September 2017 Las Caldas, Asturias (Spain) High Luminosity
Synchronization in Chaotic Vertical-Cavity Surface-Emitting Semiconductor Lasers
Synchronization in Chaotic Vertical-Cavity Surface-Emitting Semiconductor Lasers Natsuki Fujiwara and Junji Ohtsubo Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, 432-8561 Japan
Modal and Thermal Characteristics of 670nm VCSELs
Modal and Thermal Characteristics of 670nm VCSELs Klein Johnson Mary Hibbs-Brenner Matt Dummer Vixar Photonics West 09 Paper: Opto: 7229-09 January 28, 2009 Overview Applications of red VCSELs Device performance
Test bench for evaluation of radiation hardness in Application Specific Integrated Circuits
SHEP 2016 Workshop on Sensors and High Energy Physics Test bench for evaluation of radiation hardness in Application Specific Integrated Circuits Vlad Mihai PLĂCINTĂ 1,3 Lucian Nicolae COJOCARIU 1,2 1.
PARAMETER SYMBOL UNITS MIN TYP MAX TEST CONDITIONS Emission wavelength λ R nm 762,5 763,7 T=25 C, I TEC
Single Mode VCSEL 763nm TO5 & TEC Vertical Cavity Surface-Emitting Laser internal TEC and Thermistor Narrow linewidth > 2nm tunability with TEC High performance and reliability ELECTRO-OPTICAL CHARACTERISTICS
Radiation Test Report Paul Scherer Institute Proton Irradiation Facility
the Large Hadron Collider project CERN CH-2 Geneva 23 Switzerland CERN Div./Group RadWG EDMS Document No. xxxxx Radiation Test Report Paul Scherer Institute Proton Irradiation Facility Responsibility Tested
Operation of VCSELs Under Pulsed Conditions
Operation of VCSELs Under Pulsed Conditions Increasing VCSEL Output Power Bill Hogan bhogan@vixarinc.com Contents 1.0 Introduction... 2 2.0 Background... 2 3.0 VCSEL LIV Characteristics over Temperature...
PWO Crystal ECAL. Ren-yuan Zhu California Institute of Technology May 19 th US CMS Collaboration Meeting, May 19, 2001 Ren-yuan Zhu, Caltech
PWO Crystal ECAL Ren-yuan Zhu California Institute of Technology May 19 th 2001 1 The Calorimeter Supermodule 36 supermodules in barrel, 4 Dees in endcaps. 1700 crystals/supermodule, 4000 crystals/dee
Proton Irradiation Effects in Oxide-Confined Vertical Cavity Surface Emitting Laser (VCSEL) Diodes
Proton Irradiation Effects in Oxide-Confined Vertical Cavity Surface Emitting Laser (VCSEL) Diodes C. E. Barnes, J. R. Schwank*, G. M. Swift, M. G. Armendariz*, S. Guertin, G. L. Hash* and K. D. Choquette*
850NM SINGLE MODE VCSEL TO-46 PACKAGE
DATA SHEET 850NM SINGLE MODE VCSEL TO-46 PACKAGE HFE4093-332 FEATURES: Designed for drive currents between 1 and 5 ma Optimized for low dependence of electrical properties over temperature High speed 1
PERFORMANCE OF THE CMS ECAL LASER MONITORING SOURCE IN THE TEST BEAM
PERFORMANCE OF THE CMS ECAL LASER MONITORING SOURCE IN THE TEST BEAM A. BORNHEIM CALTECH 2 E. California Blvd., Pasadena, CA 925, USA E-mail: bornheim@hep.caltech.edu On behalf of the CMS ECAL Collaboration.
SIMULATION OF A SIGNAL IN THE BEAM LOSS
RADIATION ASPECTS OF LHC SIMULATION OF A SIGNAL IN THE BEAM LOSS MONITORS OF THE MOMENTUM CLEANING INSERTION FOR THE NEW COLLIMATOR JAWS DESIGN IHEP, Protvino, Russia Summary of the presentation Page 1
Design and Fabrication of a Radiation-Hard 500-MHz Digitizer Using Deep Submicron Technology
Design and Fabrication of a Radiation-Hard 500-MHz Digitizer Using Deep Submicron Technology Project Summary K.K. Gan *, M.O. Johnson, R.D. Kass, J. Moore Department of Physics, The Ohio State University
PoS(LHCP2018)031. ATLAS Forward Proton Detector
. Institut de Física d Altes Energies (IFAE) Barcelona Edifici CN UAB Campus, 08193 Bellaterra (Barcelona), Spain E-mail: cgrieco@ifae.es The purpose of the ATLAS Forward Proton (AFP) detector is to measure
EXPERIENCE WITH AND STUDIES OF THE SNS* TARGET IMAGING SYSTEM
EXPERIENCE WITH AND STUDIES OF THE SNS* TARGET IMAGING SYSTEM W. Blokland, ORNL, Oak Ridge, TN 37831, USA Abstract The Target Imaging System (TIS) shows the size and position of the proton beam by using
Pin photodiode Quality Assurance Procedure
GENEVE, SUISSE GENEVA, SWITZERLAND ORGANISATION EUROPEENE POUR LA RECHERCHE NUCLEAIRE EUROPEAN ORGANIZATION FOR NUCLEAR RESEARCH Laboratoire Européen pour la Physique des Particules European Laboratory
Attenuation length in strip scintillators. Jonathan Button, William McGrew, Y.-W. Lui, D. H. Youngblood
Attenuation length in strip scintillators Jonathan Button, William McGrew, Y.-W. Lui, D. H. Youngblood I. Introduction The ΔE-ΔE-E decay detector as described in [1] is composed of thin strip scintillators,
TOTAL IONIZING DOSE TEST REPORT No. 03T-RT54SX7S-T25KS006 April 25, 2003
J.J. Wang (408) 522-4576 jih-jong.wang@actel.com TOTAL IONIZING DOSE TEST REPORT No. 03T-RT54SX7S-T25KS006 April 25, 2003 I. SUMMARY TABLE Parameter Tolerance 1. Gross Functionality Passed 100 krad(si)
Radiation Monitoring with CVD Diamonds and PIN Diodes at BaBar
SLAC-PUB-13127 Radiation Monitoring with CVD Diamonds and PIN Diodes at BaBar M. Bruinsma a, P. Burchat b, S. Curry a, A.J. Edwards b, H. Kagan c, R. Kass c, D.Kirkby a, S. Majewski b, B.A. Petersen b
Signal-to. to-noise with SiGe. 7 th RD50 Workshop CERN. Hartmut F.-W. Sadrozinski. SCIPP UC Santa Cruz. Signal-to-Noise, SiGe 1
Signal-to to-noise with SiGe 7 th RD50 Workshop CERN SCIPP UC Santa Cruz Signal-to-Noise, SiGe 1 Technical (Practical) Issues The ATLAS-ID upgrade will put large constraints on power. Can we meet power
Efficient End-to-end Simulations
Efficient End-to-end Simulations of 25G Optical Links Sanjeev Gupta, Avago Technologies Fangyi Rao, Agilent Technologies Jing-tao Liu, Agilent Technologies Amolak Badesha, Avago Technologies DesignCon
TOTAL IONIZATION DOSE TEST REPORT
TOTAL IONIZATION DOSE TEST REPORT June 8, 1999 No. 99T-RT54SX16-P05 J. J. Wang (408)522-4576 jih-jong.wang@actel.com 1.0 SUMMARY TABLE RT54SX16A Parameters/Characteristics Results 1. Functionality Passed
On optical bleaching of barium fluoride crystals
Nuclear Instruments and Methods to Physics Research A 332 (1993) 113-120 North-Holland NUCLEAR INSTRUMENTS &METHODS IN PHYSICS RESEARCH Section A On optical bleaching of barium fluoride crystals Da-an
Measurements With Irradiated 3D Silicon Strip Detectors
Measurements With Irradiated 3D Silicon Strip Detectors Michael Köhler, Michael Breindl, Karls Jakobs, Ulrich Parzefall, Liv Wiik University of Freiburg Celeste Fleta, Manuel Lozano, Giulio Pellegrini
on-chip Design for LAr Front-end Readout
Silicon-on on-sapphire (SOS) Technology and the Link-on on-chip Design for LAr Front-end Readout Ping Gui, Jingbo Ye, Ryszard Stroynowski Department of Electrical Engineering Physics Department Southern
Applications: Signal Isolation. The is a Current-to-Current Opto-Isolator designed for high temperature applications to 200ºC.
52458 Dual Current-to-Current Opto-Isolator, High (200 C) Mii Features: Hermetically Sealed Package Optically Coupled Input/Output Isolation Tested to 1000 VDC 200 C Operation Applications: Signal Isolation
BaBar and PEP II. Physics
BaBar and PEP II BaBar SVT DCH DIRC ECAL IFR Trigger Carsten Hast LAL Orsay December 8th 2000 Physics Main Goal: CP Violation sin2β,sin2α PEP II Performance Backgrounds December 8th 2000 Carsten Hast PEP
IRST SiPM characterizations and Application Studies
IRST SiPM characterizations and Application Studies G. Pauletta for the FACTOR collaboration Outline 1. Introduction (who and where) 2. Objectives and program (what and how) 3. characterizations 4. Applications
J. J. Suter and R. H. Maurer The Johns Hopkins University Applied Physics Laboratory Johns Hopkins Road Laurel, MD 20707
LOW AND HGH DOSE PHOTON RRADATON OF QUARTZ CRYSTAL RESONATORS J. J. Suter and R. H. Maurer The Johns Hopkins University Applied Physics Laboratory Johns Hopkins Road Laurel, MD 20707. ntroduction The Johns
Installation, Commissioning and Performance of the CMS Electromagnetic Calorimeter (ECAL) Electronics
Installation, Commissioning and Performance of the CMS Electromagnetic Calorimeter (ECAL) Electronics How to compose a very very large jigsaw-puzzle CMS ECAL Sept. 17th, 2008 Nicolo Cartiglia, INFN, Turin,
The LHCb Silicon Tracker
Journal of Instrumentation OPEN ACCESS The LHCb Silicon Tracker To cite this article: C Elsasser 214 JINST 9 C9 View the article online for updates and enhancements. Related content - Heavy-flavour production
680nm Quasi Single-Mode VCSEL Part number code: 680Q-0000-X002
68nm Quasi Single-Mode VCSEL Part number code: 68Q--X2 PRODUCT DESCRIPTION A Quasi (Gaussian beam shape; but multi spectral mode) 68nm VCSEL, with single linear polarized emission also designed for modulated
TID Influence on the SEE sensitivity of Active EEE components
TID Influence on the SEE sensitivity of Active EEE components ESA Contract No. 4000111336 Lionel Salvy, Benjamin Vandevelde, Lionel Gouyet Anne Samaras, Athina Varotsou, Nathalie Chatry Alexandre Rousset,
Development of Radiation-Hard ASICs for the ATLAS Phase-1 Liquid Argon Calorimeter Readout Electronics Upgrade
Development of Radiation-Hard ASICs for the ATLAS Phase-1 Liquid Argon Calorimeter Readout Electronics Upgrade Tim Andeen*, Jaroslav BAN, Nancy BISHOP, Gustaaf BROOIJMANS, Alex EMERMAN,Ines OCHOA, John
PLCC-2 Pkg Infrared Light Emitting Diode
PLCC2 Pkg Infrared Light Emitting Diode & Series Features: SMD Package High power GaAs, 940 nm typical peak wavelength Standard GaAlAs, 890nm typical peak wavelength High power GaAIAs K and KT, 875 nm
The CMS Silicon Strip Tracker and its Electronic Readout
The CMS Silicon Strip Tracker and its Electronic Readout Markus Friedl Dissertation May 2001 M. Friedl The CMS Silicon Strip Tracker and its Electronic Readout 2 Introduction LHC Large Hadron Collider:
Recent ETHZ-YEBES Developments in Low-Noise phemts for Cryogenic Amplifiers
Receivers & Array Workshop 2010 September 20th, 2010 Recent ETHZ-YEBES Developments in Low-Noise phemts for Cryogenic Amplifiers Andreas R. Alt, Colombo R. Bolognesi Millimeter-Wave Electronics Group (MWE)
1/2/4/8 GBPS 850NM VCSEL LC TOSA PACKAGES
DATA SHEET 1/2/4/8 GBPS 850NM VCSEL LC TOSA PACKAGES HFE7192-XXX FEATURES: LC TOSA HFE7192-x6x includes flex circuit LC TOSA HFE7192-x8x leaded package High performance VCSEL Low electrical parasitic TO
AMICSA Bridging Science & Applications F r o m E a r t h t o S p a c e a n d b a c k. Kayser-Threde GmbH. Space
Bridging Science & Applications F r o m E a r t h t o S p a c e a n d b a c k E a r t h S p a c e & F u t u r e Kayser-Threde GmbH Space Industrial Applications AMICSA 2008 First radiation test results
Opto Devices Laser Diodes
CONTNTS Red/Infrared Dual Lasers P. 22 Red Lasers P. 22 Infrared Lasers P. 23 Part Numbers, Symbols and Definitions P. 24 Packaging Specifications P. 26 2 Red/Infrared Dual Lasers Part No. Pitch (µm) P
Enhanced Shape Recovery with Shuttered Pulses of Light
Enhanced Shape Recovery with Shuttered Pulses of Light James Davis Hector Gonzalez-Banos Honda Research Institute Mountain View, CA 944 USA Abstract Computer vision researchers have long sought video rate
EVALUATION OF RADIATION HARDNESS DESIGN TECHNIQUES TO IMPROVE RADIATION TOLERANCE FOR CMOS IMAGE SENSORS DEDICATED TO SPACE APPLICATIONS
EVALUATION OF RADIATION HARDNESS DESIGN TECHNIQUES TO IMPROVE RADIATION TOLERANCE FOR CMOS IMAGE SENSORS DEDICATED TO SPACE APPLICATIONS P. MARTIN-GONTHIER, F. CORBIERE, N. HUGER, M. ESTRIBEAU, C. ENGEL,
Laboratory #9 MOSFET Biasing and Current Mirror
Laboratory #9 MOSFET Biasing and Current Mirror. Objectives 1. Review the MOSFET characteristics and transfer function. 2. Understand the relationship between the bias, the input signal and the output
Status of ITC-irst activities in RD50
Status of ITC-irst activities in RD50 M. Boscardin ITC-irst, Microsystem Division Trento, Italy Outline Materials/Pad Detctors Pre-irradiated silicon INFN Padova and Institute for Nuclear Research of NASU,
The Colorado Student Space Weather Experiment (CSSWE) On-Orbit Performance
The Colorado Student Space Weather Experiment (CSSWE) On-Orbit Performance David Gerhardt 1, Scott Palo 1, Xinlin Li 1,2, Lauren Blum 1,2, Quintin Schiller 1,2, and Rick Kohnert 2 1 University of Colorado
Studies of silicon strip sensors for the ATLAS ITK project. Miguel Arratia Cavendish Laboratory, University of Cambridge
Studies of silicon strip sensors for the ATLAS ITK project Miguel Arratia Cavendish Laboratory, University of Cambridge 1 ITK project and radiation damage Unprecedented large fluences expected for the
Silicon Avalanche Photodiode SAR-/SARP-Series
Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a reach-through structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region
Simulation of High Resistivity (CMOS) Pixels
Simulation of High Resistivity (CMOS) Pixels Stefan Lauxtermann, Kadri Vural Sensor Creations Inc. AIDA-2020 CMOS Simulation Workshop May 13 th 2016 OUTLINE 1. Definition of High Resistivity Pixel Also
Thin Silicon R&D for LC applications
Thin Silicon R&D for LC applications D. Bortoletto Purdue University Status report Hybrid Pixel Detectors for LC Next Linear Collider:Physic requirements Vertexing 10 µ mgev σ r φ,z(ip ) 5µ m 3 / 2 p sin
TID Influence on the SEE sensitivity of Active EEE components. Lionel Salvy
TID Influence on the SEE sensitivity of Active EEE components Lionel Salvy Purpose of the study During space application, devices are subject to TID and SEE at the same time But part radiation qualification
HV BOARD. Claudio Arnaboldi Tito Bellunato Gianluigi Pessina INFN, Milano. Thierry Gys, Didier Piedigrossi CERN. LHCb, 20/01/2005 Genova 1
HV BOARD Claudio Arnaboldi Tito Bellunato Gianluigi Pessina INFN, Milano Thierry Gys, Didier Piedigrossi CERN LHCb, 20/01/2005 Genova 1 HV distribution Half Column (8 HPDs) Half Column (8 HPDs) 20 KV Input
Polarimetry Concept Based on Heavy Crystal Hadron Calorimeter
Polarimetry Concept Based on Heavy Crystal Hadron Calorimeter for the JEDI Collaboration CALOR 216 May 17, 216 Irakli Keshelashvili Introduction JEDI Polarimetry Concept MC Simulations Laboratory and Beam
nm C-Band DWDM DFB Laser Module
The 1764 laser module is a Dense Wavelength Division Multiplexing (DWDM) laser for analog wireless and distributed antenna system (DAS) applications. It features a distributed-feedback (DFB) device that
AN INITIAL investigation into the effects of proton irradiation
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 53, NO. 2, FEBRUARY 2006 205 Proton Irradiation of EMCCDs David R. Smith, Richard Ingley, and Andrew D. Holland Abstract This paper describes the irradiation
Fiber Pigtailed Lasers for Intra-Satellite Communication
Fiber Pigtailed Lasers for Intra-Satellite Communication S. Laaksonen *, P. Sipilä, and V. Vilokkinen Modulight, Inc. PO Box 77, FIN -3311 Tampere, Finland M. Mosberger and P.Mueller ** Contraves Space
64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array
64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array 69 64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array Roland Jäger and Christian Jung We have designed and fabricated
Versatile transceiver production and quality assurance
Journal of Instrumentation OPEN ACCESS Versatile transceiver production and quality assurance To cite this article: L. Olantera et al Related content - Temperature characterization of versatile transceivers
Features. Description. Table 1. Device summary. Quality level. Package. Gold TO-254AA
Rad-Hard 100 V, 48 A N-channel Power MOSFET Features Datasheet - production data V BDSS I D R DS(on) Q g 100 V 48 A 30 mω 135 nc TO-254AA 3 1 2 Fast switching 100% avalanche tested Hermetic package 50
STRH8N10. Rad-Hard 100 V, 6 A N-channel Power MOSFET. Features. Applications. Description
Rad-Hard 100 V, 6 A N-channel Power MOSFET Features Datasheet - production data V DSS I D R DS(on) Q g 100 V 6 A 0.30 Ω 22 nc SMD.5 Fast switching 100% avalanche tested Hermetic package 50 krad TID SEE
Technical Brief #5. Power Monitors
Technical Brief #5 Power Monitors What is a power monitor?...2 Evanescent field power monitor...2 Responsivity...2 Insertion loss...3 Polarization Dependent Responsivity (PDR)...4 Polarization Dependent
Infrared Light Emitting Diode
Features: High power GaAs, 940 nm center wavelength High power GaAIAs and T, 875 nm center wavelength VCSEL GaAlAs, 850 nm center wavelength Point Source GaAlAs, 850 nm center wavelength PLCC2 package
Silicon Carbide Solid-State Photomultiplier for UV Light Detection
Silicon Carbide Solid-State Photomultiplier for UV Light Detection Sergei Dolinsky, Stanislav Soloviev, Peter Sandvik, and Sabarni Palit GE Global Research 1 Why Solid-State? PMTs are sensitive to magnetic
1754C C-Band DWDM DFB Laser Module
The 1754C laser module is a Dense Wavelength Division Multiplexing (DWDM) laser for analog CATV applications. It features a distributedfeedback (DFB) device that has been designed specifically for radio