Opto Devices Laser Diodes

Size: px
Start display at page:

Download "Opto Devices Laser Diodes"

Transcription

1 CONTNTS Red/Infrared Dual Lasers P. 22 Red Lasers P. 22 Infrared Lasers P. 23 Part Numbers, Symbols and Definitions P. 24 Packaging Specifications P. 26 2

2 Red/Infrared Dual Lasers Part No. Pitch (µm) P (nm) Absolute Maximum Ratings Max. (C) ITH Red/Infrared Dual Lasers Red Lasers lectrical and Optical Characteristics Iop (W/A) Vop // quivalent Circuit R2WMNL2-00x (For Automotive) R2WMNL2-0x (Standard) 0 0 Notes :.Unless otherwise specified, the lectrical and Optical Characteristics are typical values. 2.The Control number is applied in the x of part No (4pin) (4pin) (4) 780nm 660nm Red Lasers Part No. P (nm) Absolute Maximum Ratings Max. (C) ITH lectrical and Optical Characteristics Iop (W/A) Vop // quivalent Circuit R65MZT R65MQX (Higher SD) mm R63NZC R63NPC (Open) R63NPC (Open) R63NPC7 R63NPC (Open) (Open) R65NZX (Higher temp.) R65NZX2 (Higher SD) R65NZX3 (Higher SD) R65PZX2 (Higher SD) R65PZX3 (Higher SD) Note: Unless otherwise specified, the lectrical and Optical Characteristics are typical values. 22

3 Infrared Lasers Opto Devices Infrared Lasers Part No. P (nm) Absolute Maximum Ratings Max. (C) ITH lectrical and Optical Characteristics Iop (W/A) Vop // quivalent Circuit R78MZA R78MZM R78NZM R78NZM R82NZJ R84NZJ R85NZJ R94NZJ R94NZJ R78PZM R82PZJ R84PZJ R85PZJ R94PZJ R94PZJ Note: Unless otherwise specified, the lectrical and Optical Characteristics are typical values. Safety The light emitted from laser diodes, can cause retinal damage if viewed directly. Never look directly into the laser beam or through any lenses or fibers when the system is operating. For optical axis alignment or other operations, we recommend the use of an infrared-sensitive camera (ITV) or wearing protective goggles. Under Development The products described in this specification are designed to be used with ordinary electronic equipment or devices (such as audio-visual equipment, office-automation equipment, communication device, electrical appliances, and electronic toys). If you intend to use these products or devices which require an extremely high level of reliability and malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About open package products. With the open package product (package mark is P), the external environment could deteriorate the characteristics and reliability of. Please be careful to foreign matter including toner, human substance and smoke, corrosion due to ion, the volatilization component from the glue and flux, condensation, optical tweezers effect, etc. Do not touch the components including the laser chip emission point. 23

4 Part Numbers Part Numbers, Symbols and Definitions chip Name R L D 6 5 P Z X 2 0 A / Number of Beams Polarity MARK Common Common MARK Material Diameter Pin Glass Window Additional No nm M Cathode Cathode N Metal with nm N Anode Cathode P Metal without nm P Cathode Anode Q Metal with nm Z Metal with nm nm nm 2W 2wavelength Symbols and Definitions Absolute maximum ratings Absolute maximum ratings are values which must not be exceeded even momentarily regardless of external conditions. These values are specified for a case temperature TC of 25C. Fig. Optical Output vs. Forward Current Parameter Symbol Definition Optical Output Reverse Voltage Maximum allowable optical output during continuous or pulse operation. No kinks will appear in the output vs. forward current curve up to this output value. (Fig.) The maximum allowable voltage when a reverse bias is applied to the device. Lasers and photo diodes are rated separately. Optical Output[Po] Absolute Maximum Ratings Kink Operating Temperature Allowed ambient temperature range when the device is in operation. Delined to be the case temperature of the device. Storage Temperature Tstg Allowed temperature range when the device is being stored. Forward Current[IF] lectrical and Optical Characteristics Item Symbol Definition Threshold Current Ith In Fig.2, A is the spontaneous emission range and B is the stimulated emission range. The threshold current is the current at which laser emission begins. Operating Current IOP The forward current required to generate the specified optical output. Operating Voltage VOP The forward voltage required to generate the specified optical output. Differential fficiency The average increase in the output per unit of drive current. In the laser emission range, this is the slope of the linear optical output vs. forward current curve. (Fig.2) Monitor Current Parallel Divergence Angle Perpendicular Divergence Angle Parallel Deviation Angle Perpendicular Deviation Angle mission Point Accuracy // // X, Y, Z When the specified optical output is generated, this is the output current of the photodiode when a specified reverse voltage is applied to the monitor photodiode. Light emitted from the laser spreads as shown in Fig.3. The result of measurements of this spread in the parallel (x) and perpendicular (y) directions with respect to the junction surface is shown in Fig.3. The widths of the spread at the points where the strength drops to /2 the peak strength (half value full angles) are defined as angles and called // and. (Fig.4) These values express the deviation of the optical axis with respect to the reference plane, and are defined for the parallel and perpendicular spread angles (Fig.4) to be (a - b)/2(fig.5). This indicates the amount of deviation of the emission point.x and Y indicate deviation from the center of the package, and Z indicates deviation from the reference plane. (Fig.6) Peak mission Peak emission wavelength when generating the specified output. As shown in Fig.7, the emission spectrum has both a single mode and a multimode. In the multimode, the wavelength is delined as the wavelength with the highest intensity. 24

5 Part Numbers, Symbols and Definitions Opto Devices Fig.2 Optical Output vs. Forward Current Fig.3 Radiation Characteristics Differential efficiency η= IF Rear Front Perpendicular transverse mode X Y Ith A B Far-field pattern IF Parallel transverse mode Fig.4 Radiation Characteristics Fig.5 Deviation Angle Output Output Output /2 peak intensity deg. X 0 0 θ // θ deg. Y b 0 a deg. Fig.6 mission Point Accuracy Fig.7 mission Spectrum Single mode x and y reference point X Z Chip position z reference plan Optical Intensity λp λ Multi mode Y Optical Intensity λp λ 25

6 Packaging Specifications Packaging Specifications Dimensions (Unit : mm) (4pin) Min Min Cover glass ± mm Min Cover glass Min Max. Optical distance.8±0. Sub-mount.2 Max Min. 6.5 (4) 2 (Open).0 Min Cover glass Optical distance ± Please note that differences may exist depending on the part number. Therefore, it is strongly recommended that the customer verify the actual specifications before usage. 26

635nm Red Laser Diode. U-LD A-preliminary. U-LD A-preliminary

635nm Red Laser Diode. U-LD A-preliminary. U-LD A-preliminary 635nm Red Laser Diode Specifications (1) Device: Laser Diode (2) Structure: TO-18(ψ5.6mm),with Pb free cap External dimensions(unit : mm) Absolute Maximum Ratings(Tc=25 ) Parameter Symbol Value Unit Optical

More information

LNCT22PK01WW. Description. Package. Feature. Pin assignment. Application Optical disk drive Sensing Industrial use. Absolute Maximum Ratings 3)

LNCT22PK01WW. Description. Package. Feature. Pin assignment. Application Optical disk drive Sensing Industrial use. Absolute Maximum Ratings 3) LNCTPKWW Description LNCTPKWW is a MOCVD fabricated 66 nm and 78 nm band dual wavelength laser diode with multi quantum well structure, adapting open type frame package to reduce the size and weight. Package

More information

Infrared light emitting diode, top view type

Infrared light emitting diode, top view type Infrared light emitting diode, top view type The is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 9nm peak wavelength suitable for silicon

More information

UNION OPTRONICS CORP.

UNION OPTRONICS CORP. Features 1. Peak wavelength at 25 o C : 808 nm (typical) 2. Standard light output : 300mW (CW) 3. Package Type : TO-18 (ψ5.6mm) Pb free flat window cap with glass, no monitor PD. 4. Low operation current

More information

HL6714G. AlGaInP Laser Diode ODE C (Z) Rev.3 Jan Description. Features

HL6714G. AlGaInP Laser Diode ODE C (Z) Rev.3 Jan Description. Features AlGaInP Laser Diode ODE-8-19C (Z) Rev.3 Jan. 3 Description The HL6714G is a.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser

More information

U-SMD-65xx SERIES 5630 LASER DIODE

U-SMD-65xx SERIES 5630 LASER DIODE Features 1. Peak wavelength at 25 o C:650 nm (typical) 2. Standard light output:5mw (CW) 3. 5630 Packaged 4. High temperature operation 5. single mode lasing Applications 1. Laser Module 2. Laser Pointer

More information

HL6535MG. Visible High Power Laser Diode for Recordable-DVD

HL6535MG. Visible High Power Laser Diode for Recordable-DVD Visible High Power Laser Diode for Recordable-DVD ODE-28-1B (Z) Rev.2 Mar. 25 Description The HL6535MG is a.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable

More information

High Power Multimode Laser Diodes 6W Output Power in CW Operation with Wavelengths from 1470nm to 1550nm

High Power Multimode Laser Diodes 6W Output Power in CW Operation with Wavelengths from 1470nm to 1550nm High Power Multimode Laser Diodes 6W Output Power in CW Operation with Wavelengths from 1470nm to 1550nm SemiNex delivers the highest available CW power at infrared wavelengths and can optimize the design

More information

HL6312G/13G. AlGaInP Laser Diodes

HL6312G/13G. AlGaInP Laser Diodes AlGaInP Laser Diodes ODE-8-19H (Z) Rev.8 Jan. 3 Description The HL631G/13G are.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are

More information

U-LD-80B051A-C Features 1. Peak wavelength at 25 o C:808 nm (typical) 2. Standard light output:200mw (CW)

U-LD-80B051A-C Features 1. Peak wavelength at 25 o C:808 nm (typical) 2. Standard light output:200mw (CW) Features 1. Peak wavelength at 25 o C:808 nm (typical) 2. Standard light output:200mw (CW) 3. Package Type:TO-18 (ψ5.6mm) Pb free flat window cap with glass, with monitor PD. 4. Low operation current 5.

More information

UNION OPTRONICS CORP.

UNION OPTRONICS CORP. Features 1. Low operation current 2. High reliability 3. Low divergence angle 4. Standard optical power output:300mw (CW) 5. TO-56 (ψ5.6mm) Packaged, with Pb-free window cap. Applications 1. Motion sensor

More information

UNION OPTRONICS CORP.

UNION OPTRONICS CORP. Features 1. Peak wavelength at 25 o C:808 nm (typical) 2. Standard light output:500mw (CW) 3. TO-5 (ψ9.0mm) Packaged, cap window with flat Pb-free lens, monitor PD inside. 4. Low operation current 5. Low

More information

UNION OPTRONICS CORP.

UNION OPTRONICS CORP. Features 1. Low operation current 2. High reliability 3. Low divergence angle 4. Standard optical power output:200mw (CW) 5. TO-56 (ψ5.6mm) Packaged, with Pb-free window cap. Applications 1. Motion sensor

More information

HL6335G/36G. Circular Beam Low Operating Current. Description. Features. Absolute Maximum Ratings. Optical and Electrical Characteristics

HL6335G/36G. Circular Beam Low Operating Current. Description. Features. Absolute Maximum Ratings. Optical and Electrical Characteristics Circular Beam Low Operating Current ODE8- (M) Rev. Aug., 8 Description The HL65G/6G are.6 μm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned

More information

HL8325G. GaAlAs Laser Diode

HL8325G. GaAlAs Laser Diode GaAlAs Laser Diode ODE-28-582B (Z) Rev.2 Jan. 23 Description The HL8325G is a high-power.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suitable

More information

UNION OPTRONICS CORP.

UNION OPTRONICS CORP. Features 1. High temperature operation 2. Lateral single mode lasing 3. Standard optical power output:10mw (CW) 4. TO-56 (ψ5.6mm) Packaged, with Pb-free window cap. Applications 1. Laser Module 2. Lase

More information

UNION OPTRONICS CORP.

UNION OPTRONICS CORP. Features 1. Small perpendicular divergence angle 2. Lateral single mode lasing 3. Standard optical power output:100mw (CW) 4. TO-56 (ψ5.6mm) Packaged, with Pb-free window cap. 5. Built-in Photo Diode for

More information

U-LD-85E061Ap Features 1. Peak wavelength at 25 o C : 850 nm (typical) 2. Standard light output : 500mW (CW)

U-LD-85E061Ap Features 1. Peak wavelength at 25 o C : 850 nm (typical) 2. Standard light output : 500mW (CW) Features 1. Peak wavelength at 25 o C : 850 nm (typical) 2. Standard light output : 500mW (CW) 3. TO-18 (ψ5.6mm) Packaged, cap window with flat Pb-free lens, monitor PD inside. 4. Small perpendicular divergence

More information

2014 USHIO OPTO SEMICONDUCTORS, INC. UOS-GC001

2014 USHIO OPTO SEMICONDUCTORS, INC. UOS-GC001 OPTODEVICES Product Information Nov. 2014 USHIO OPTO SEMICONDUCTORS, INC. UOS-GC001 Vol. 1 New Product HL40053MG New Product Applications Direct Imaging Bio & Medical Measurement Features Optical output

More information

U-LD83C061A-Ep Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output:300mw (CW)

U-LD83C061A-Ep Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output:300mw (CW) U-LD83C061A-Ep Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output:300mw (CW) 3. Package Type:TO-18 (ψ5.6mm) cap with flat window-glass by Pb free, with monitor PD. 4. Small

More information

UNION OPTRONICS CORP.

UNION OPTRONICS CORP. Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:50mw (CW) 3. TO-18 (ψ5.6mm) Packaged, cap window without lens, without monitor PD. Applications 1. Medical laser treatment

More information

U-LD Ap/62Ap Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output : 50mW (CW) 3. Type:

U-LD Ap/62Ap Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output : 50mW (CW) 3. Type: Features 1. Peak wavelength at 25 o C:830 nm (typical) 2. Standard light output : 50mW (CW) 3. Type: TYPE U-LD- 835060Ap U-LD- 835062Ap DESCRIPTION 4. Small perpendicular divergence angle 5. Lateral single

More information

Infrared light emitting diode, top view type

Infrared light emitting diode, top view type Infrared light emitting diode, top view type The has the response speed and luminous output necessary for image transmission in audio-visual applications. It can support almost all types of optical transmission

More information

High Power Pulsed Laser Diodes 850-Series

High Power Pulsed Laser Diodes 850-Series High Power Pulsed Laser Diodes 850-Series FEATURES Single and stacked devices up to 100 Watts Proven AlGaAs high reliability structure 0.9 W/A efficiency Excellent temperature stability Hermetic and custom

More information

HL6312G/13G. AlGaInP Laser Diodes

HL6312G/13G. AlGaInP Laser Diodes AlGaInP Laser Diodes ODE-8-19I (Z) Rev.9 Mar. 5 Description The HL631G/13G are.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are

More information

HL6323MG. AlGaInP Laser Diode

HL6323MG. AlGaInP Laser Diode AlGaInP Laser Diode ODE-28-141A (Z) Rev.1 Jan. 23 Description The HL6323MG is a.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating

More information

Laser diode. CW (Continuous Wave) drive At the position of 1.6mm or more from the lead base (3s)

Laser diode. CW (Continuous Wave) drive At the position of 1.6mm or more from the lead base (3s) GH656B2C (Under development) Features (1) 4 speed DVD-R/+R/-RW/+RW/RAM drives (2) High power output (pulse MAX. 1mW) (3) Low aspect ratio type (Aspect ratio : 1.7) The shaping prism of a pick-up becomes

More information

High-Power 10 W 9xx nm Fiber-Coupled Diode Laser with Feedback Protection 6398-L4i Series

High-Power 10 W 9xx nm Fiber-Coupled Diode Laser with Feedback Protection 6398-L4i Series COMMERCIAL LASERS High-Power 10 W 9xx nm Fiber-Coupled Diode Laser with Feedback Protection 6398-L4i Series Key Features Full fiber laser feedback protection 10 W output power High reliability 105 µm aperture

More information

U-LD-98C041Ap Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:300mw (CW)

U-LD-98C041Ap Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:300mw (CW) Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:300mw (CW) 3. TO-18 (ψ5.6mm) Packaged, cap window with flat Pb-free lens, monitor PD inside. Applications 1. Laser indicator

More information

UNION OPTRONICS CORP.

UNION OPTRONICS CORP. Features 1. High temperature operation 2. Low divergence angle 3. Peak wavelength at 25 o C:658 nm (typical) 4. Standard light output:10mw (CW) 5. TO-18 (ψ5.6mm) Packaged, cap window with flat Pb-free

More information

U-LD A Features 1. Peak wavelength at 25 o C:635 nm (typical) 2. Standard light output:5mw (CW)

U-LD A Features 1. Peak wavelength at 25 o C:635 nm (typical) 2. Standard light output:5mw (CW) Features 1. Peak wavelength at 25 o C:635 nm (typical) 2. Standard light output:5mw (CW) 3. TO-18 (ψ5.6mm) Packaged, cap window with flat Pb-free lens, monitor PD inside. Applications 1. Laser Pointer

More information

LD Item Symbol Value Unit Condition 100 mw CW Output power

LD Item Symbol Value Unit Condition 100 mw CW Output power LNCT8WW Description LNCT8WW is a MOCVD fabricated 66nm and 78nm band dual wavelength laser diode with multi quantum well structure, using TO-56 CAN package to ensure versatile use. Features Dual wavelength:

More information

Operating voltage Vop V Wavelength λ nm

Operating voltage Vop V Wavelength λ nm Description is a MOCVD fabricated 66nm and 78nm band dual wavelength laser diode with multi quantum well structure, adapting open type frame package to reduce the size and weight. Feature Dual wavelength:

More information

U-LD-98B043Ap Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:200mw (CW)

U-LD-98B043Ap Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:200mw (CW) Features 1. Peak wavelength at 25 o C:980 nm (typical) 2. Standard light output:200mw (CW) 3. TO-18 (ψ5.6mm) Packaged, cap window with flat Pb-free lens, monitor PD inside. Applications 1. Laser indicator

More information

LNCQ28PS01WW. Description. Package. Features. Pin assignment. Applications. Absolute Maximum Ratings. Electrical and Optical Characteristics

LNCQ28PS01WW. Description. Package. Features. Pin assignment. Applications. Absolute Maximum Ratings. Electrical and Optical Characteristics Description is a MOCVD fabricated 660nm band wavelength laser diode with multi quantum well structure, using TO-56 CAN package to ensure versatile use. Features Wavelength: 661 nm (typ.) High output power:

More information

Laser Diode in TO-220 Package with FC-Connector 1.5 W cw Version 1.1 SPL 2F94-2S

Laser Diode in TO-220 Package with FC-Connector 1.5 W cw Version 1.1 SPL 2F94-2S 2016-03-02 Laser Diode in TO-220 Package with FC-Connector 1.5 W cw Version 1.1 Features: Efficient radiation source for cw and pulsed operation Reliable InGa(Al)As strained quantum-well structure New

More information

Item Symbol Min. Typ. Max. Unit Condition. Threshold current Ith ma. Operating current Iop ma

Item Symbol Min. Typ. Max. Unit Condition. Threshold current Ith ma. Operating current Iop ma LNCQ Description LNCQ is a MOCVD fabricated 66nm band wavelength laser diode with multi quantum well structure, using TO-56 CAN package to ensure versatile use. Features Wavelength: 66 nm (typ.) High output

More information

Operating voltage Vop V Wavelength λ nm

Operating voltage Vop V Wavelength λ nm Description is a MOCVD fabricated 66 nm and 78 nm band dual wavelength laser diode with multi quantum well structure, adapting open type frame package to reduce the size and weight. Feature Dual wavelength:

More information

Operating voltage Vop V Wavelength λ nm

Operating voltage Vop V Wavelength λ nm Description is a MOCVD fabricated 66nm and 78nm band dual wavelength laser diode with multi quantum well structure, adapting open type frame package to reduce the size and weight. Feature Dual wavelength:

More information

Package Type HL6362MG/63MG: MG

Package Type HL6362MG/63MG: MG Low Operating Current Visible Laser Diode ODE-8-11E (Z) Rev.5 Apr. 14, 6 Description The HL636MG/63MG are.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as

More information

DL Blue Laser Diode in TO38 ICut Package. PRELIMINARY Datasheet. Creative Technology Lasers (925) Tele.

DL Blue Laser Diode in TO38 ICut Package. PRELIMINARY Datasheet. Creative Technology Lasers (925) Tele. Blue Laser Diode in TO38 ICut Package Features Typ. emission wavelength 450nm Efficient radiation source for cw and pulsed operation Single transverse mode semiconductor laser High modulation bandwidth

More information

High End / Low Cost Pulsed Laser Diodes 905D1SxxUA-Series

High End / Low Cost Pulsed Laser Diodes 905D1SxxUA-Series High End / Low Cost Pulsed Laser Diodes 905D1SxxUA-Series FEATURES Single and Multi-junction devices up to 75 W Hermetic 5.6 mm CD package Excellent temperature stability Ultra precise mechanical tolerances

More information

Green Laser Diode in TO56 Package Version 0.2 PLT5 520B. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

Green Laser Diode in TO56 Package Version 0.2 PLT5 520B. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device 2007-05-23 Green Laser Diode in TO56 Package Version 0.2 Features Optical output power (continuous wave): 80 mw (T case = 25 C) Typical emission wavelength: 520 nm Efficient radiation source for cw and

More information

670nm Red Laser Diode. U-LD A-preliminary 友嘉科技股份有限公司桃園縣楊梅鎮 3 鄰高獅路 156 號. U-LD A-preliminary

670nm Red Laser Diode. U-LD A-preliminary 友嘉科技股份有限公司桃園縣楊梅鎮 3 鄰高獅路 156 號. U-LD A-preliminary 670nm Red Laser Diode Specifications (1) Device: Laser Diode (2) Structure: TO-18(ψ5.6mm ), With Pb free glass cap, PD External dimensions(unit : mm) Absolute Maximum Ratings(Tc=25 ) Parameter Symbol Value

More information

Blue Laser Diode in TO38 ICut Package, 80mW CW DL PRELIMINARY

Blue Laser Diode in TO38 ICut Package, 80mW CW DL PRELIMINARY Creative Technology Lasers (925) 210.1330 www.laser66.com Blue Laser Diode in TO38 ICut Package, 80mW CW DL-450-80-1 PRELIMINARY Features Typ. emission wavelength 450nm Efficient radiation source for cw

More information

Diode Lasers, Single- Mode 50 to 200 mw, 830/852 nm. 54xx Series

Diode Lasers, Single- Mode 50 to 200 mw, 830/852 nm. 54xx Series Diode Lasers, Single- Mode 50 to 200 mw, 830/852 nm 54xx Series www.lumentum.com Data Sheet Diode Lasers, Single-Mode 50 to 200 mw,830/852 nm High-resolution applications including optical data storage,

More information

808nm IR Laser Diode. U-LD-80E041A-preliminary 友嘉科技股份有限公司桃園縣楊梅鎮 3 鄰高獅路 156 號. U-LD-80E041A-preliminary

808nm IR Laser Diode. U-LD-80E041A-preliminary 友嘉科技股份有限公司桃園縣楊梅鎮 3 鄰高獅路 156 號. U-LD-80E041A-preliminary 808nm IR Laser Diode Specifications (1) Device: Laser Diode (2) Structure: TO-5(ψ9.0mm ),With Pb free glass cap, PD (3) Power Output: 500mW External dimensions(unit : mm) Absolute Maximum Ratings(Tc=25

More information

High-Power 8xx nm Fiber-Coupled Diode Laser 2495-L3 Series

High-Power 8xx nm Fiber-Coupled Diode Laser 2495-L3 Series COMMERCIAL LASERS High-Power 8xx nm Fiber-Coupled Diode Laser 2495-L3 Series Key Features 4.0 W output power industrial 808 nm 4.5 W output power medical/dental 812 nm 105 µm aperture 0.2 NA Highly reliable

More information

High Power Pulsed Laser Diodes 850-Series

High Power Pulsed Laser Diodes 850-Series High Power Pulsed Laser 85-Series Features Proven AlGaAs high reliability structure.9 W/A efficiency Excellent temperature stability Hermetic and custom designed package Applications Range finding Surveying

More information

Green Laser Diode in TO38 ICut Package Version 1.1 PL 520. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

Green Laser Diode in TO38 ICut Package Version 1.1 PL 520. ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device Green Laser Diode in TO38 ICut Package Version 1.1 PL 520 Features Optical output power (continuous wave): 30 / 50 mw (T case = 25 C) Typical emission wavelength: 515 / 520 nm Efficient radiation source

More information

NEC's 1310 nm InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS

NEC's 1310 nm InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS FEATURES NEC's 131 nm InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS INTERNAL OPTICAL ISOLATOR PEAK EMISSION WAVELENGTH: λp = 131 nm OPTICAL OUTPUT POWER: = 2. mw WIDE OPERATING

More information

High-Power 2.0 W 830 nm Fiber-Coupled Diode Laser 2486-L3 Series

High-Power 2.0 W 830 nm Fiber-Coupled Diode Laser 2486-L3 Series COMMERCIAL LASERS High-Power 2.0 W 830 nm Fiber-Coupled Diode Laser 2486-L3 Series Key Features Up to 2 W output power at 0.22 NA 830 ± 15 nm 60 µm Step Index fiber Highly reliable Highly efficiency Applications

More information

SPECIFICATIONS. Laser Diode GH0832BA1K

SPECIFICATIONS. Laser Diode GH0832BA1K Laser Diode Sep, 06 SPECIFICATIONS Laser Diode GH08BAK Notice Contents in this technical document be changed without any notice due to the product modification. In the absence of confirmation by device

More information

SPL DS90A_3. Chip. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SPL DS90A_3. Nanostack Pulsed Laser Diode

SPL DS90A_3. Chip. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 SPL DS90A_3. Nanostack Pulsed Laser Diode www.osram-os.com Produktdatenblatt Version 1.1 Chip Nanostack Pulsed Laser Diode Applications Industrial Automation (Machine Controls, Light Barriers, Vision Controls) LIDAR, Pre-Crash, ACC Pedestrian

More information

650nm Laser Diode for DVD U-LD B

650nm Laser Diode for DVD U-LD B 650nm Laser Diode for DVD Specifications (1) Device: Laser Diode (2) Structure: TO-18(ψ5.6mm), With Pb free glass cap, PD External dimensions(unit : mm) Absolute Maximum Ratings (Tc=25 ) Parameter Symbols

More information

Green Laser Diode in TO38 ICut Package Version 0.2

Green Laser Diode in TO38 ICut Package Version 0.2 2007-05-23 Green Laser Diode in TO38 ICut Package Features Optical output power (continuous wave): 80 mw ( = 25 C) Typical emission wavelength: 520 nm Efficient radiation source for cw and pulsed operation

More information

850NM SINGLE MODE VCSEL TO-46 PACKAGE

850NM SINGLE MODE VCSEL TO-46 PACKAGE DATA SHEET 850NM SINGLE MODE VCSEL TO-46 PACKAGE HFE4093-332 FEATURES: Designed for drive currents between 1 and 5 ma Optimized for low dependence of electrical properties over temperature High speed 1

More information

GH04020B2A. Blue violet Laser Diode. Low Power Blue violet Laser Diode. Under development New product. Outline Dimensions.

GH04020B2A. Blue violet Laser Diode. Low Power Blue violet Laser Diode. Under development New product. Outline Dimensions. GH04020B2A Under development New product Blue violet Laser Diode Low Power Blue violet Laser Diode Features (1) Wavelength : 406 nm(typ.) (2) Optical power output : CW 20mW (3) 5.6mm CAN package Outline

More information

NV4V31SF. Data Sheet R08DS0070EJ0100 Rev Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source DESCRIPTION FEATURES APPLICATIONS

NV4V31SF. Data Sheet R08DS0070EJ0100 Rev Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source DESCRIPTION FEATURES APPLICATIONS Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source Data Sheet R08DS0070EJ0100 Rev.1.00 DESCRIPTION The is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure

More information

PHOENIX ELECTRIC CO.,LTD.

PHOENIX ELECTRIC CO.,LTD. 950nm HIGH POWER LED Features Chip size:1.0 1.0mm Number of Chips:1pc Peak Wavelength:950nm Optical efficiency(typ.):1160mw Viewing half angle:47 Package:SMD Ceramic package Lens:Silicone Resin Applications

More information

High-Power 8.0 W 9xx nm Fiber-Coupled Diode Laser 6397-L3 Series

High-Power 8.0 W 9xx nm Fiber-Coupled Diode Laser 6397-L3 Series COMMERCIAL LASERS High-Power 8.0 W 9xx nm Fiber-Coupled Diode Laser 6397-L3 Series Key Features 8.0 W output power 105 µm aperture 0.2 NA Highly reliable Applications Fiber laser pumping Material processing

More information

L Epoxy Lens Type Infrared Illuminator

L Epoxy Lens Type Infrared Illuminator L1050-66-60 Epoxy Lens Type Infrared Illuminator L1050-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency lngaas diode chips, mounted on a

More information

[MILLIMETERS] INCHES DIMENSIONS ARE IN:

[MILLIMETERS] INCHES DIMENSIONS ARE IN: Features: Wide acceptance angle, 00 Fast response time Linear response vs Irradiance Plastic leadless chip carrier (PLCC-) Low Capacitance Top Sensing Area Tape and reel packaging Moisture Sensitivity

More information

Opto-Device & Custom LED 5 MOLD LED LAMP L1050G-02. Infrared LED Lamp

Opto-Device & Custom LED 5 MOLD LED LAMP L1050G-02. Infrared LED Lamp LG- Opto-Device & Custom LED MOLD LED LAMP LG- Infrared LED Lamp LGS- is a GaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at

More information

SPL PL90_3. Nanostack Pulsed Laser Diode in Plastic Package 75 W Peak Power Version 1.5

SPL PL90_3. Nanostack Pulsed Laser Diode in Plastic Package 75 W Peak Power Version 1.5 215-11-2 Nanostack Pulsed Laser Diode in Plastic Package 75 W Peak Power Version 1.5 Features: Optical peak power up to 75 W Laser wavelength 95 nm Suited for short laser pulses from 1 to 1 ns Nanostack

More information

915/940 nm Fiber-Coupled Diode Lasers. L4S-Series

915/940 nm Fiber-Coupled Diode Lasers. L4S-Series 915/940 nm Fiber-Coupled Diode Lasers L4S-Series wwwlumentumcom Data Sheet L4S-Series diode lasers offer up to 12 W of power through a 105 μm fiber The L4S leverages the low-cost L4 platform while introducing

More information

GH04125A2A. Blue violet Laser Diode. High Power Blue violet Laser Diode. Under development New product. Outline Dimensions.

GH04125A2A. Blue violet Laser Diode. High Power Blue violet Laser Diode. Under development New product. Outline Dimensions. GH04125A2A Under development New product Blue violet Laser Diode High Power Blue violet Laser Diode Features (1) Wavelength : 406 nm(typ.) (2) Optical power output : CW 125mW (3) 5.6mm CAN package Outline

More information

SMBB850D AnodeMark heatsink

SMBB850D AnodeMark heatsink Data Sheet SMBB8D-- 8nm High Power TOP LED Outline and Internal Circuit anode AnodeMark.7 a cathode. heatsink land pattern for solder c heat sink a..... c (Unit : mm) Features Application Chip Material

More information

mw Peak emission wavelength λ p IF = 100mA nm Half intensity wavelength λ IF= 100mA nm

mw Peak emission wavelength λ p IF = 100mA nm Half intensity wavelength λ IF= 100mA nm GL4/GL3F GL4/GL3F TO-8 Type Infrared Emitting Diode Features. Output : GL4 Φ e MIN. 3.3mW at I F = ma GL3F Φ e MIN..44mW at I F = ma. Beam angle : GL4 θ : TYP. ± 7 GL3F θ : TYP. ± 3. To- 8 type standard

More information

(0.35) (0.2) 2.2. P 75 mw (0.65) 1.4

(0.35) (0.2) 2.2. P 75 mw (0.65) 1.4 GLMNxMP Series GLMNxMP Series Features. Compact and thin package 2. Surface mount type 3. 2-way mounting;top view/side view 4. Reflow soldering 5. High output type:glmnmp 6. General purpose type:glmnmp

More information

NEC's 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION

NEC's 1550 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 622 Mb/s APPLICATION FEATURES NEC's 55 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE for 6 Mb/s APPLICATION PEAK EMISSION WAVELENGTH: λp = 55 nm OPTICAL OUTPUT POWER: =. mw INTERNAL OPTICAL ISOLATOR InGaAs MONITOR PIN-PD

More information

L6990/750/800/850-40B59 Multi-Wavelength LED

L6990/750/800/850-40B59 Multi-Wavelength LED Φ Stem type LED Lamp L///-B L///-B Multi-Wavelength LED This product consists of AlGaAs(,,,nm) LED mounted on TO- pins type stem with a glass lens. Chips are connected as anode common. .

More information

Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power Version 1.2

Hybrid Pulsed Laser Diode with Integrated Driver Stage 70 W Peak Power Version 1.2 217-5-24 Hybrid Pulsed Laser Diode with Integrated Driver Stage 7 W Peak Power ersion 1.2 SPL LL9_3 Features: Low cost, small size plastic package Integrated FET and capacitors for pulse control Strained

More information

PLT Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1. Blue-Cyan Laser Diode in TO56 Package

PLT Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1. Blue-Cyan Laser Diode in TO56 Package www.osram-os.com Produktdatenblatt Version 1.1 Metal Can TO56 Blue-Cyan Laser Diode in TO56 Package Applications Health Monitoring (Heart Rate Monitoring, Pulse Oximetry) Measurement Levelling Features:

More information

DATA SHEET. InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE nm OTDR APPLICATION

DATA SHEET. InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE nm OTDR APPLICATION DATA SHEET LASER DIODE NDL7510P InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NDL7510P is a 1 310 nm laser diode DIP module with single mode fiber and internal

More information

Optodevice Data Book ODE I. Rev.9 Mar Opnext Japan, Inc.

Optodevice Data Book ODE I. Rev.9 Mar Opnext Japan, Inc. Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Section 1 Operating Principles 1.1 Operating Principles of Laser Diodes (LDs) and Infrared Emitting Diodes (IREDs) 1.1.1 Emitting Principles

More information

PL 450B. Metal Can TO38. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 PL 450B. Blue Laser Diode in TO38 ICut Package

PL 450B. Metal Can TO38. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 PL 450B. Blue Laser Diode in TO38 ICut Package www.osram-os.com Produktdatenblatt Version 1.1 Metal Can TO38 Blue Laser Diode in TO38 ICut Package Applications Projection Home LED & Laser Projection Professional LED & Laser Smoke Detectors Stage Lighting

More information

Infrared Light Emitting Diode

Infrared Light Emitting Diode Features: High power GaAs, 940 nm center wavelength High power GaAIAs and T, 875 nm center wavelength VCSEL GaAlAs, 850 nm center wavelength Point Source GaAlAs, 850 nm center wavelength PLCC2 package

More information

PLT Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1. Blue-Cyan Laser Diode in TO56 Package

PLT Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1. Blue-Cyan Laser Diode in TO56 Package www.osram-os.com Produktdatenblatt Version 1.1 Metal Can TO56 Blue-Cyan Laser Diode in TO56 Package Applications Health Monitoring (Heart Rate Monitoring, Pulse Oximetry) Measurement Levelling Features:

More information

PARAMETER SYMBOL UNITS MIN TYP MAX TEST CONDITIONS Emission wavelength λ R nm 762,5 763,7 T=25 C, I TEC

PARAMETER SYMBOL UNITS MIN TYP MAX TEST CONDITIONS Emission wavelength λ R nm 762,5 763,7 T=25 C, I TEC Single Mode VCSEL 763nm TO5 & TEC Vertical Cavity Surface-Emitting Laser internal TEC and Thermistor Narrow linewidth > 2nm tunability with TEC High performance and reliability ELECTRO-OPTICAL CHARACTERISTICS

More information

Product Bulletin. SDL-2400 Series 2.0 & 3.0 W, 798 to 800/808 to 812 nm High-brightness Laser Diodes

Product Bulletin. SDL-2400 Series 2.0 & 3.0 W, 798 to 800/808 to 812 nm High-brightness Laser Diodes Product Bulletin SDL-24 Series 2. & 3. W, 798 to 8/88 to 812 nm High-brightness Diodes The SDL-24 series laser diodes represent a breakthrough in high continuous wave (CW) optical power and ultra-high

More information

SMT880 High Performance Infrared TOP IR LED

SMT880 High Performance Infrared TOP IR LED TOP IR LED High Performance Infrared TOP IR LED consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is mw typical of output power. It emits a spectral band of radiation at 88nm.

More information

VCSEL SENSOR FLAT WINDOW TO CAN

VCSEL SENSOR FLAT WINDOW TO CAN DATA SHEET VCSEL SENSOR FLAT WINDOW TO CAN SV3637-001 FEATURES: Designed for low drive currents between 7 and 15mA Flat Window TO-46 style package High speed 1 Ghz The SV3637 combines many of the desired

More information

PL TB450B. Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 PL TB450B. Blue Laser Diode in TO56 Package

PL TB450B. Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 PL TB450B. Blue Laser Diode in TO56 Package www.osram-os.com Produktdatenblatt Version 1.1 Metal Can TO56 Blue Laser Diode in TO56 Package Applications Equipment Illumination (e.g. Curing, Endoscope) Projection Home LED & Laser Projection Professional

More information

The OPV300 / OPV310 have a flat lens while the OPV314 has a microbead lens. Refer to mechanical drawings for details.

The OPV300 / OPV310 have a flat lens while the OPV314 has a microbead lens. Refer to mechanical drawings for details. Features: 850nm Technology Data rates up to 2.5 Gbps High thermal stability Low drive current / high output density Narrow and concentric beam angle Recommended for multimode fiber applications Burned

More information

EDC800D-1100-S5. Data Sheet. 800nm High Power TOP LED. Outline and Internal Circuit PRELIMINARY. (Unit : mm)

EDC800D-1100-S5. Data Sheet. 800nm High Power TOP LED. Outline and Internal Circuit PRELIMINARY. (Unit : mm) Data Sheet EDC8D-1-S PRELIMINARY 8nm High Power TOP LED Outline and Internal Circuit (Unit : mm) Features Chip Material : AlGaAs Chip Dimension : um * um Number of Chips : 1pce Peak Wavelength : 8nm typ.

More information

PL 520B. Metal Can TO38. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 PL 520B. Green Laser Diode in TO38 ICut Package

PL 520B. Metal Can TO38. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1 PL 520B. Green Laser Diode in TO38 ICut Package www.osram-os.com Produktdatenblatt Version 1.1 Metal Can TO38 Green Laser Diode in TO38 ICut Package Applications Measurement Levelling Projection Home LED & Laser Projection Professional LED & Laser Stage

More information

SMT850DS-S1 High Performance TOP IR LED

SMT850DS-S1 High Performance TOP IR LED SMT8DS-S High Performance TOP IR LED PRELIMINARY - Chip Material: AlGaAs - Chip Dimension: um x um - Number of Chips: pcs - Peak Wavelength: 8nm typ. - Lead Frame Die: Silver Plated -

More information

Optoelectronics Data Book

Optoelectronics Data Book Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Index...4 Eye Safety Issues...6 Introduction...7 Componets High-Power GaAlAs IR Emitters in TO-46 Packages... High-Temperature

More information

EDC S5. Data Sheet. 1050nm High Power TOP LED. Outline and Internal Circuit. (Unit : mm)

EDC S5. Data Sheet. 1050nm High Power TOP LED. Outline and Internal Circuit. (Unit : mm) Data Sheet EDC1-11-S 1nm High Power TOP LED Outline and Internal Circuit (Unit : mm) Features Chip Material : InGaAsP Chip Dimension : 1um * 1um Number of Chips : 1pce Peak Wavelength : 1nm typ. Lead Frame

More information

PLT5 450B. Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1. Blue Laser Diode in TO56 Package

PLT5 450B. Metal Can TO56. Applications. Features: Ordering Information. Produktdatenblatt Version 1.1. Blue Laser Diode in TO56 Package www.osram-os.com Produktdatenblatt Version 1.1 Metal Can TO56 Blue Laser Diode in TO56 Package Applications Health Monitoring (Heart Rate Monitoring, Pulse Oximetry) Projection Home LED & Laser Projection

More information

SMT430R. Data Sheet. 430nm High Performance TOP LED. Outline and Internal Circuit PRELIMINARY. (Unit : mm)

SMT430R. Data Sheet. 430nm High Performance TOP LED. Outline and Internal Circuit PRELIMINARY. (Unit : mm) Data Sheet SMTR PRELIMINARY nm High Performance TOP LED Outline and Internal Circuit (Unit : mm) Features Chip Material : InGaN Chip Dimension : um * um Number of Chips : pce Peak Wavelength : nm typ.

More information

DISCONTINUED. LASER DIODE NX8570 Series nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION FEATURES

DISCONTINUED. LASER DIODE NX8570 Series nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION FEATURES DESCRIPTION LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR The NX8570 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed

More information

830nm single mode diode laser

830nm single mode diode laser Preliminary Data Sheet 830nm single mode diode laser SM830-350-TO56-R0x Features: High output power: 350 mw High Efficiency: 1 W/A Lateral Single Mode Wavelength: 824 ± 6nm High Reliability Applications:

More information

HCS 50W, 60W & 80W. Data Sheet. Housed Collimated High Power Laser Diode Bar

HCS 50W, 60W & 80W. Data Sheet. Housed Collimated High Power Laser Diode Bar HCS 50W, 60W & 80W Housed Collimated High Power Laser Diode Bar Features: The II-VI Laser Enterprise HCS series of hard soldered collimated laser diode bars offer superior optical beam parameters with

More information

DatasheetArchive.com. Request For Quotation

DatasheetArchive.com. Request For Quotation DatasheetArchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative

More information

SPECIFICATIONS FOR INFRARED LED LAMPS LIR30243

SPECIFICATIONS FOR INFRARED LED LAMPS LIR30243 SPECIFICATIONS FOR INFRARED LED LAMPS LIR3243 WENRUN OPTOELECTRONIC WENRUN INFRARED Lamps LIR3243 Features: High speed response. High reliability and long life. High output power. Low power consumption.

More information

Green Laser Diode in TO56 Package Version 0.3 PLT ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device

Green Laser Diode in TO56 Package Version 0.3 PLT ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device Green Laser Diode in TO56 Package Version 0.3 PLT5 520 Features Optical output power (continuous wave): 30 / 50 mw (T case = 25 C) Typical emission wavelength: 520 nm Efficient radiation source for cw

More information

Part No. Emitting Color Polarity. KW1-S281AAA Orange Common Anode. KW1-S281CAA Orange Common Cathode

Part No. Emitting Color Polarity. KW1-S281AAA Orange Common Anode. KW1-S281CAA Orange Common Cathode Features.28inch (7.mm) digit height. The thickness is thinness than tradition display. Packaged in tape and reel for SMT manufacturing. Low current operation. Excellent characters appearance. Categorized

More information

SPECIFICATIONS FOR DUAL-COLOR LED LAMPS LEG30292

SPECIFICATIONS FOR DUAL-COLOR LED LAMPS LEG30292 SPECIFICATIONS FOR DUAL-COLOR LED LAMPS LEG3292 WENRUN OPTOELECTRONIC WENRUN LED Lamps LEG3292 Features: Two chips are matched for uniform light output. Long life-solid state reliability. Low power consumption.

More information