FMR and standing spin waves in multifferroics
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1 FMR and standing spin waves in multifferroics Sławomir Ziętek AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 3, 3-59 Kraków, Poland Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 1
2 Outline Magnetization dynamics in ferromagnetic thin film and patterned nanostructures Pulse Inductive Microwave Magnetometry (PIMM) Vector/Scalar Networ Analyser (VNA) Electrical rectification in microstrpis - spin diode effect (SD) Ferromagnetic Resonance (FMR) Standing Spin Waves (SSW) Voltage control of magnetic anisotorpy and magnetization dynamics in PMN-PT/NiFe multiferroic heteostructures Voltage control of magnetic anisotropy in PMN-PT/NiFe thin film Voltage control of FMR and SSW in PMN-PT/NiFe microstrips Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 2
3 Pulse Inductive Microwave Magnetometry Picosecond pulse generator Power supply y GPIB bus PC + LabView x Power supply Sampling oscilloscope Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 3
![f [GHz] Pulse Inductive Microwave Magnetometry 3 2 1 Picosecond pulse generator Sampling oscilloscope Power supply y GPIB bus PC + LabView Power supply -6-4 -2 2 4 6 H (mt) x Voltage [ V] 6 4 2-2 -4](/docs-images/94/119875216/images/4-2.jpg "4 2-2 -4 4 2-2 -4 2 α = γτ μ M S τ = 1.22 ns τ = 1.29 ns τ = 1.16ns f = 2.3 GHz f = 1.82 GHz f = 1.")
4 f [GHz] Pulse Inductive Microwave Magnetometry Picosecond pulse generator Sampling oscilloscope Power supply y GPIB bus PC + LabView Power supply H (mt) x Voltage [ V] α = γτ μ M S τ = 1.22 ns τ = 1.29 ns τ = 1.16ns f = 2.3 GHz f = 1.82 GHz f = 1.31 GHz t [ns] Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July mT 4mT 2mT U(t) = U + A exp( t τ ) sin(ωt + φ)
5 Vector/Scalar Networ Analyser Norm. abs. power FWHM H [mt] f [GHz] H [mt] ΔH = ΔH + α 4πf γ H =.28mT f [GHz] f [GHz] RF generator PC + LabView GPIB bus Power supply H [mt] RF scpectrum analzser Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 5
6 Oersted Field induced spin diode effect in NiFe micro-strips Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 6
7 Oersted Field induced spin diode effect in NiFe micro-strips RF current H V dc Time Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 7
8 Oersted Field induced spin diode effect in NiFe micro-strips Magnetization oscillation due to Oersted field M 1 RF current θ RF Oersted field Oscillating resistance H 1 V dc Time Spin diode DC voltage Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 8
9 Oersted Field induced spin diode effect in NiFe micro-strips Magnetization oscillation due to Oersted field M 1 RF current Oscillating resistance H RF Oersted field 1 V dc Time Spin diode DC voltage Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 9
10 Oersted Field induced spin diode effect in NiFe micro-strips RF current External Magnetic Field R R(H) R(θ ) δr Oscillating resistance H Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 1
11 Oersted Field induced spin diode effect in NiFe micro-strips M 1 RF current H Mixing RF current with oscillating resistance give DC componnet δr R(θ ) V dc Time Oscillating resistance Spin diode DC voltage Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
12 Spin diode effect theory V out = V dc + V ac = δrcos ωt + β = VδR 2R(θ ) V R θ cosβ + cos(2ωt + β) cos ωt time undependent (SPIN DIODE VOLTAGE) time dependent RF current Oscillating resistance 1 Spin diode DC voltage V dc Time Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
13 Spin diode effect theory V out = V dc + V ac = δrcos ωt + β = VδR 2R(θ ) V R θ cosβ + cos(2ωt + β) cos ωt time undependent (SPIN DIODE VOLTAGE) time dependent RF current Oscillating resistance 1 Spin diode DC voltage V dc Time Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
14 Spin diode effect theory V out = V dc + V ac = δrcos ωt + β = VδR 2R(θ ) V R θ cosβ + cos(2ωt + β) cos ωt AMR angular dependence R θ = R + ΔRcos 2 Stationary point specified by total magnetic energy U = K 1 sin 2 θ sin 2 φ Uniaxial anisotropy (perpendicular to the long axis) M H Zeeman energy M H d Shape anisotropy 3 2 λ σ 1 1 E cos 2 θ + σ 1 (E) sin 2 θ sin 2 magnetoelastic φ anisotropy M H oe[1,11] Oersted Field component Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
15 Spin diode effect theory V out = V dc + V ac = δrcos ωt + β = VδR 2R(θ ) V R θ cosβ + cos(2ωt + β) cos ωt Resistance changes in around the stationary point δr = 2ΔR sin θ cos(θ )δθ AMR angular dependence R θ = R + ΔRcos 2 To calculate δθ we use the LLG equation m( r) m( r) α m( r) = Γ t t Γ r = m r U r Stationary point specified by total magnetic energy U = K 1 sin 2 θ sin 2 φ Uniaxial anisotropy (perpendicular to the long axis) M H Zeeman energy M H d Shape anisotropy 3 2 λ σ 1 1 E cos 2 θ + σ 1 (E) sin 2 θ sin 2 magnetoelastic φ anisotropy M H oe[1,11] Oersted Field component Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
16 Spin diode effect theory V out = V dc + V ac = δrcos ωt + β = VδR 2R(θ ) V R θ cosβ + cos(2ωt + β) cos ωt V dc = VδR 2R(θ ) cosβ Resistance changes in around the stationary point δr = 2ΔR sin θ cos(θ )δθ AMR angular dependence R θ = R + ΔRcos 2 To calculate δθ we use the LLG equation m( r) m( r) α m( r) = Γ t t Γ r = m r U r Stationary point specified by total magnetic energy U = K 1 sin 2 θ sin 2 φ Uniaxial anisotropy (perpendicular to the long axis) M H Zeeman energy M H d Shape anisotropy 3 2 λ σ 1 1 E cos 2 θ + σ 1 (E) sin 2 θ sin 2 magnetoelastic φ anisotropy M H oe[1,11] Oersted Field component Final expression for spin diode voltage V DC ~ a ω2 ω 2 +bσω 2 cos ψ + bω ω 2 ω 2 a σω sin ψ ω 2 ω 2 2 +σ 2 ω 2 Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
17 9μm Spin diode detection of FMR and SSW in NiFe strips 6μm 2nm of NiFe on Si/SiOx substrate Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
18 9μm Spin diode detection of FMR and SSW in NiFe strips 6μm 2nm of NiFe on Si/SiOx substrate Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
19 Spin diode detection of FMR and SSW in NiFe strips f (GHz) FMR n=1 n=2 PSSW 2x9 m 2 strip H (T) QSW PSSW Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
20 Electric field influence on magnetic anisotorpy in PMN- PT/NiFe film E-field [1-1] [kv/cm] 2 [1] [1] M R /M S. 18 [1-1] H [Oe] H [Oe] Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 2
![Electric field influence on magnetic anisotorpy in PMN- PT/NiFe film E-field [1-1] -25 25 H [Oe]](/docs-images/94/119875216/images/21-3.jpg "[kv/cm] 2 4 6 8 1 [1] -25 25 H [Oe] Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July")
21 Electric field influence on magnetic anisotorpy in PMN- PT/NiFe film E-field [1-1] H [Oe] [kv/cm] [1] H [Oe] Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
![Intensity [kcps] 2 θ 2θscans of PMN-PT (11) vs. E-field.](/docs-images/94/119875216/images/22-2.jpg "(22) PMN-PT E 15 1 5 65.2 65.4 65.6 65.8 2.7 Pb(Mg.33 Nb.")
22 Intensity [kcps] 2 θ 2θscans of PMN-PT (11) vs. E-field. (22) PMN-PT E Pb(Mg.33 Nb.66 )O PbTiO % cm kv E [kvcm -1 ] Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July [%]
![Piezoelectric parameters: d 31, d 32, d 33 d 33 = 174 pc N.174 % cm kv -1.2 d 32 =d [1][11] d 33 =d [11][11].](/docs-images/94/119875216/images/23-3.jpg "1 [%] E d 31 =d [-11][11] 4 8 12 E [kvcm -1 ].")
23 Piezoelectric parameters: d 31, d 32, d 33 d 33 = 174 pc N.174 % cm kv -1.2 d 32 =d [1][11] d 33 =d [11][11].1 [%] E d 31 =d [-11][11] E [kvcm -1 ]. Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
24 Piezoelectric parameters: d 31, d 32, d 33 d 33 = 174 pc N d 33 = 1766 pc N d 32 = 1761 pc N [1].174 % cm kv -1.2 d 31 = 723 pc N d 32 =d [1][11] d 33 =d [11][11].1 [%] E d 31 =d. [-11][11] E [kvcm -1 ] [1] M. Shanthi ae al., Appl. Phys. Lett, vol. 92, no. 14, p , 28. Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
![Stress in permalloy and inverse magnetostriction effect d 33 =d [11][11] E d 32 =d [1][11] d 31 =d [-11][11] Y = 2GPa υ =.](/docs-images/94/119875216/images/25-6.jpg "22 ΔU ME (E) = 3λσ(E) [1] M. Shanthi ae al., Appl. Phys. Lett, vol. 92, no. 14, p. 14296, 28.")
25 Stress in permalloy and inverse magnetostriction effect d 33 =d [11][11] E d 32 =d [1][11] d 31 =d [-11][11] Y = 2GPa υ =.22 ΔU ME (E) = 3λσ(E) [1] M. Shanthi ae al., Appl. Phys. Lett, vol. 92, no. 14, p , 28. Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
26 Magnetic energy and FMR in PMN-PT/NiFe heterostructure Uniaxial magnetocristalline energy Demag. energy Zeeman energy Magnetostriction energy Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
27 Magnetic energy and FMR in PMN-PT/NiFe heterostructure Uniaxial magnetocristalline energy Demag. energy Zeeman energy Magnetostriction energy Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
![Lithography PMN-PT substrate Orientation: [11] Substrate size: 1x1x.](/docs-images/94/119875216/images/28-2.jpg "5mm 3 9 um long NiFe strip were fabricated with fallowing widths: 1.5 um 2.")
28 Lithography PMN-PT substrate Orientation: [11] Substrate size: 1x1x.5mm 3 9 um long NiFe strip were fabricated with fallowing widths: 1.5 um 2.6 um 6.7 um 5nm of Au (with 5nm Ti buffer) was deposited in order to create bottom electorde Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
29 Voltage control of AMR K=785J/m 3 M S =.97T λ= Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
30 Experimental setup for SDE measurements NiFe wire Gold pads L=9 µm W=1.5, 2.6, 6.7 µm Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 3
31 Angular depndence of spin diode FMR RF generator GPIB bus Power supply PC + LabView Power supply R ( ) A ( V) AMR = 2.1% (deg) 4.x1 9 6.x1 9 Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July DC voltage (V) f (Hz) Yamaguchi, A., et al. "Rectification of radio frequency current in ferromagnetic nanowire." Applied physics letters 9.18 (27):
32 Spin diode in H-domain AC Voltage [V].6 1.5x9 um AC Voltage [V] x9 um AC Voltage [V].2. 6x9 um Field [Oe] Field [Oe] Field [Oe] H I RF θ = 45 deg f [GHz] m 2.6 m 6.7 m continues film Field [Oe] f [GHz] x 9 m 2.6 x 9 m 6.7 x 9 m 2 continues film (PIMM) Field [Oe] Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
33 Voltage control of FMR frequency m 2kVcm -1 kvcm -1 K=785J/m 3 M S =.97T f=22mhz λ= f (GHz) m 6.7 m 1 2 H [Oe] kv/cm 2kV/cm V DC kv/cm 2 kv/cm f=2mhz f=194mhz f=129mhz f=12mhz f=91mhz 21.5 Oe 36.5 Oe 6 Oe 1 Oe 15 Oe 2 Oe f [GHz] Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
34 Voltage control of FMR frequency f (GHz) m 2.6 m 6.7 m 2kVcm -1 kvcm -1 2 kv/cm 2kV/cm 1 2 H [Oe] Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
35 Voltage control of FMR frequency m 2kVcm -1 kvcm -1 K=785J/m 3 M S =.97T 1.5μm 2.6μm λ= μm f (GHz) m 6.7 m 2 kv/cm 2kV/cm 1 2 H [Oe] Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
36 Angular depndence of spin diode SSW V DC [ V] Vdc [ V] H [Oe] H [Oe] H [Oe] [deg] f=5ghz [deg] FMR n=1 n= Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
37 Micromagnetic simulations simulation experiment FMR.4.2 simulation sin(2*phi)cos(phi) fit experiment field [mt] 25 2 SSW Vdc [a.u.] H [deg] angle [deg] 37 Nanospin 216 Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
38 Voltage control of quantized spin waves P = t W W = 67nm t = 2nm Guslienko, K. Y., Demokritov, S. O., Hillebrands, B., & Slavin, A. N. (22). Phys. Rev. B, 66(13), Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
39 Micromagnetic simulations electric field influence no field electric field f [GHz] H [mt] FMR (no field) FMR (electric field) spin wave (no field) spin wave (electric field) V (a.u.) field [mt] 39 Nanospin 216 Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July
40 Thank you for your attention! Sławomir Ziętek, Nanospin Summarizing MEETING, 11th-12th of July 216 4
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