Three-terminal experiments on Si-MgO tunneling structures
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1 Juliane Laurer AG Dr. Max Bougeard Mustermann Referat Kommunikation & Marketing Verwaltung Three-terminal experiments on Si-MgO tunneling structures SFB 689 C9: Spin Injection into Silicon Juliane Laurer AG Bougeard FAKULTÄT FÜR PHYSIK
2 Measurement configurations Non-local spin-valve geometry: Separation of charge and spin current No parasitic effects such as AMR Pure spin information BUT: Processing and measurement not easy since 29 only two groups reported on successful spin injection into silicon
3 Measurement configurations Non-local spin-valve geometry: Separation of charge and spin current No parasitic effects such as AMR Pure spin information BUT: Processing and measurement not easy since 29 only two groups reported on successful spin injection into silicon Three-terminal Hanle geometry: Only one tunnel contact for spin injection and detection No separation of charge and spin current & detector is biased Spin lifetimes are much longer than theoretically expected Debate on the origin of measured Hanle-like signals
4 Origin of 3T signal: competing models Group of R. Jansen: S. Sharma, et al. PRB 89, 7531 (214) Hanle effect due to spin injection into Si, but describing theory is incorrect Group of M. Tanaka: S. Sato, et al. APL 17, 3247 (215) Paramagnetic layer formed at ferromagnettunnel barrier interface Group of M. Yamamoto: T. Uemura, et al. APL 11, (212) Tunneling rates depend on external B-field Group of H. Jaffrès & A. Fert: M. Tran, et al. PRL 12, 3661 (29) Sequential tunneling via localized states in the tunnel barrier or at the interfaces Groups of H. Dery & F. Casanova: O. Txoperena, et al. PRL 113, (214) Magnetoresistance due to Pauli spin blockade in defect states in the tunnel barrier
5 Origin of 3T signal: competing models Group of R. Jansen: S. Sharma, et al. PRB 89, 7531 (214) Hanle effect due to spin injection into Si, but describing theory is incorrect Group of M. Tanaka: S. Sato, et al. APL 17, 3247 (215) Paramagnetic layer formed at ferromagnettunnel barrier interface Group of M. Yamamoto: T. Uemura, et al. APL 11, (212) Tunneling rates depend on external B-field Group of H. Jaffrès & A. Fert: M. Tran, et al. PRL 12, 3661 (29) Sequential tunneling via localized states in the tunnel barrier or at the interfaces Groups of H. Dery & F. Casanova: O. Txoperena, et al. PRL 113, (214) Magnetoresistance due to Pauli spin blockade in defect states in the tunnel barrier
6 Outline 1. Growth and characterization of epitaxial hybrid Si/MgO/Fe/Au tunnel junctions 2. Three-terminal experiments on epitaxial tunnel junctions
7 Sample growth in combined MBE system Vacuum channel connected Si/Ge- and metal-mbe Growth of hybrid stacks without breaking the vacuum Good interface control Possibility of epitaxial growth with single crystalline tunnel barriers
8 Epitaxial Si/MgO/Fe/Au-stacks Au Fe MgO n + -Si Si/MgO/Fe/Au Atomically flat Si-MgO and Fe-MgO interfaces Single crystalline MgO tunnel barrier MgO predominantly grows in MgO 11 direction on Si 11
9 Epitaxial Si/MgO/Fe/Au-stacks Au Fe MgO n + -Si Fe 1 Si 11 Epitaxial Si/MgO/Fe/Au-stack with pronounced four-fold in plane magnetic anisotropy Excellent material for Si-based spin injection experiments
10 Current (ma) 3T experiments on Si/MgO/Fe/Au T = 4.2 K Extraction Injection Voltage (V)
11 Current (ma) Voltage 3T (µv) 3T experiments on Si/MgO/Fe/Au T = 4.2 K Extraction 35 T = 4.2 K I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA Injection Voltage (V) Several B dependent signals: 1 T < B < 2 T Rotation of magnetization out of plane Magnetic field (T)
12 Current (ma) Voltage 3T (µv) 3T experiments on Si/MgO/Fe/Au T = 4.2 K Extraction 35 T = 4.2 K I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA Injection Voltage (V) Several B dependent signals: 1 T < B < 2 T Rotation of magnetization out of plane mt < B < 1 T Magnetoresistive background? Magnetic field (T)
13 Current (ma) Voltage 3T (µv) 3T experiments on Si/MgO/Fe/Au T = 4.2 K Extraction 35 T = 4.2 K I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA Injection Voltage (V) Several B dependent signals: 1 T < B < 2 T Rotation of magnetization out of plane mt < B < 1 T Magnetoresistive background? Magnetic field (T) B < 7 mt R drops with increasing B Hanle signal?
14 Curent (ma) 3T experiments with ohmic contacts 1. T = 4.2 K Extraction Injection Voltage (V)
15 Curent (ma) Voltage 3T (µv) 3T experiments with ohmic contacts T = 4.2 K I = -15µA I = -5µA I = 2µA I = 2µA I = 5µA 4 1. T = 4.2 K Extraction Injection Voltage (V) Magnetic field (T) Ohmic contacts no ferromagnet involved and no sign of tunneling Weak quadratic background signal No evidence of Hanle-type signal around B =
16 Current (ma) Samples without ferromagnet.4 T = 4.2 K Extraction Injection Voltage (V)
17 Current (ma) Voltage 3T(mV) Samples without ferromagnet T = 4.2 K Extraction Injection Voltage (V) T = 4.2 K Magnetic field (T) I = -25µA I = -2.5µA I = -.5µA I = 3µA I = 25µA I = 5µA I = 15µA Weak linear background signal, especially for current extraction Strong Hanle-like signal around B = with FWHM 7 mt BUT: no ferromagnet Signal does NOT originate from spin injection into Si channel
18 Voltage 3T (µv) Voltage 3T (µv) Comparison: Samples with & without Fe Hanle-like signal with same FWHM for both samples BUT: without Fe: R increases with increasing B with Fe: R decreases with increasing B Magnetoresistive effect from tunneling through MgO barrier? Si / MgO / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA Si / MgO / Fe / Au I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA Magnetic field (T)
19 Voltage 3T (µv) Voltage 3T (µv) Comparison: Samples with & without Fe Hanle-like signal with same FWHM for both samples BUT: without Fe: R increases with increasing B with Fe: R decreases with increasing B Magnetoresistive effect from tunneling through MgO barrier? Si / MgO / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA B = Groups of H. Dery & F. Casanova: O. Txoperena, et al. PRL 113, (214) Magnetoresistance due to Pauli spin blockade in defect states in the tunnel barrier Si / MgO / Fe / Au I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA Magnetic field (T)
20 Voltage 3T (µv) Voltage 3T (µv) Comparison: Samples with & without Fe Hanle-like signal with same FWHM for both samples BUT: without Fe: R increases with increasing B with Fe: R decreases with increasing B Magnetoresistive effect from tunneling through MgO barrier? Si / MgO / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA B = B Groups of H. Dery & F. Casanova: O. Txoperena, et al. PRL 113, (214) Magnetoresistance due to Pauli spin blockade in defect states in the tunnel barrier Si / MgO / Fe / Au I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA Magnetic field (T)
21 Voltage 3T (mv) Voltage 3T (µv) Samples without ferromagnet Temperature dependence Dependence on orientation of B B out of plane B 45 B in plane Injection: I = -1µA T = 4.2K Extraction I = 1µA Magnetic field (T) 5K 4K 3K 2K 1K 4K Magnetic field (T) Background decreases with increasing temperature Hanle-like signal vanishes at T 5 K Hanle-like signal is independent on orientation of external magnetic field
22 Voltage (µv) Voltage (µv) Summary and outlook Epitaxial Si/MgO/Fe/Au tunneling stacks single crystalline MgO tunnel barrier Pronounced fourfold magnetic anisotropy Three-terminal experiments with & without Fe layer Hanle-like signal only occurs if MgO tunnel barrier is involved Signal cannot only stem from injected spins in the Si channel Analogies to Pauli spin blockade model in defect states of MgO R211A2_13 Si / MgO / Au R29A4_4 Si / MgO / Fe / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA Magnetic field (T) Juliane Laurer, AG Bougeard, Juliane.Laurer@ur.de
23 Voltage (µv) Voltage (µv) Summary and outlook Epitaxial Si/MgO/Fe/Au tunneling stacks single crystalline MgO tunnel barrier Pronounced fourfold magnetic anisotropy Three-terminal experiments with & without Fe layer Hanle-like signal only occurs if MgO tunnel barrier is involved Signal cannot only stem from injected spins in the Si channel Analogies to Pauli spin blockade model in defect states of MgO R211A2_13 Si / MgO / Au R29A4_4 Si / MgO / Fe / Au I= -75µA I= -25µA I= -2.5µA I= -.5µA I= 3µA I= 25µA I= 5µA I= 15µA I=-4µA I=-2µA I= µa I= 5µA I= 2µA I= 4µA I= 6µA I= 8µA Magnetic field (T) Outlook Non-local spin-valve and non-local Hanle measurements for pure spin information Juliane Laurer, AG Bougeard, Juliane.Laurer@ur.de
24 Acknowledgment AG Bougeard Prof. Dr. Dominique Bougeard Mareen Schäfer Michaela Trottmann Chair Weiss Prof. Dr. Dieter Weiss Dr. Mariusz Ciorga Chair Back Prof. Dr. Christian Back Prof. Dr. Josef Zweck Dr. Matthias Kronseder Markus Härtinger Thank you for your attention.
25 RHEED pattern of Si/MgO/Fe/Au Si(1)<11> MgO(1)<11> Fe(1)<1> Au(1)<11> Si(1)<1> MgO(1)<1> Fe(1)<11> Au(1)<1>
26 Kerr signal (a. u.) Kerr signal (a. u.) MOKE measurements in plane easy axis Kerr signal out of plane Kerr signal Magnetic field (mt) Magnetic field (T) Along in plane easy axis: Coercive field H C.36 mt Out of plane, i.e. along hard axis: Saturation at B 2.1 T
27 Epitaxial Si/MgO/Fe/Au-stacks Au Fe Si 11 MgO MgO 1 MgO 11 n + -Si Si/MgO/Fe/Au Very sharp and atomically flat interfaces MgO predominantly grows in MgO 11 direction on Si 11 BUT: observation of both, MgO 11 and MgO 1
28 Voltage 3T (µv) Voltage 3T (mv) Samples with ferromagnet Temperature dependence Dependence on orientation of B Extraction: I = -8µA T = 4.2K B out of plane B 45 B in plane Magnetic field (T) 4.2K 4K 5K 7K 1K 13K 15K 175K Magnetif field (T) Hanle-like signal present at least up to T = 175 K Strength of background signal decreases In-plane magnetic anisotropy comes into play Hanle-like signal might still be present in plane
29 V 3T (µv) R (k ) 3T comparison to Txoperena µA -5µA -2µA -5µA -3µA -1µA -,5µA µa R 3T ( ) R R = dv/di R = V(B=)/I magnetic field (T) V B=T (mv)
30 Voltage (µv) Voltage (µv) V NL (µv) V NL (µv) Voltage (µv) V NL (µv) V NL (µv) Voltage (µv) V NL (µv) V NL (µv) Non-local spin-valve experiments 5 Extraction Injection I = 3 µa T = 4.3 K magnetic field (T) R241A2_6 Extraction Inj 4, Det 7-1 I=2µA I=-2µA Inj 7, Det I=4µA I=-4µA 75 1 Inj 6, Det I=6µA I=-6µA Inj 7, Det 6 Det 4 Det 6 Det magnetic field (T) magnetic field (T) Inj 4, Det Inj 6, Det magnetic field (T)
31 Mesa etching with channel isolation Au MgO Fe n + -Si Ion beam etching (IBE, Ar ions) Reactive ion etching (RIE, SF 6 + Ar) Al 2 O 3 deposition (ALD) Lift-off
32 Processing steps on the mesa E-beam lithography Ti/Au evaporation IBE RIE (SF 6 + CHF 3 ) HF dip Ti/Au evaporation
33 Epitaxy and lattice mismatch
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