High Speed Digital Isolator for Communications Applications. Features. Applications. Description

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NVE CORPORATION I710ISOOOP High Speed Digital Isolator for Communications Applications Functional Diagram GAVANIC ISOATION V OE 1 IN 1 OUT Features +5V and +3.

2500V RMS Isolation U1577 Approved (File # E207481) Applications Truth Table V I V OE V O H H H Z H H Z Digital Fieldbus Isolation Multiplexed Data Transmission Computer Peripheral Interface Noise

1 NVE CORPORATION I710ISOOOP High Speed Digital Isolator for Communications Applications Functional Diagram GAVANIC ISOATION V OE 1 IN 1 OUT Features +5V and +3.3V CMOS Compatible 2 ns Typical Pulse Width Distortion 4 ns Typical Propagation Delay Skew 10 ns Typical Propagation Delay High Speed: 100 MBd 30 kv/µs Typical Common Mode Rejection Tri State Output 2500V RMS Isolation U1577 Approved (File # E207481) Applications Truth Table V I V OE V O H H H Z H H Z Digital Fieldbus Isolation Multiplexed Data Transmission Computer Peripheral Interface Noise Reduction in High Speed Digital Systems Isolated Data Interfaces ogic evel Shifting Description The I710 is a CMOS digital isolator integrated with NVE s patented* Isooop technology, which gives the I710 high speed performance and excellent transient immunity specifications. The symmetric magnetic coupling barrier gives this device a typical propagation delay of only 10 ns and a pulse width distortion of 2 ns, giving the I710 the best specifications of any isolator device. The I710 also has a 100 Mbaud data rate, making it the world s fastest digital isolator. The I710 is ideally suited for isolating such applications as DeviceNet/CAN, PROFIBUS, RS-485, RS422, etc. It is available in 8-pin PDIP and 8-pin SOIC packages, and is specified over the temperature range of -40 C to +100 C. Extended temperature ranges are also available. See page six for packaging and ordering information. Isoloop is a registered trademark of NVE, Inc. * US Patent number 5,831,426 and others

2 I710ISOOOP Absolute Maximum Ratings Parameters Symbol Min. Max. Units Storage Temperature T S o C Ambient Operating Temperature (1) T A o C Supply Voltage V DD1, V DD Volts Input Voltage V I -0.5 V DD Volts Input Voltage V OE -0.5 V DD Volts Output Voltage V O -0.5 V DD Volts Average Output Current I O 10 mamps ead Solder Temperature(10s) 260 o C ESD 2kV Human Body Model Insulation Specifications Parameter Condition Min Typ. Max. Units Rated Voltage, 1 minute 60Hz 2500 V RMS Partial Discharge, 100% Tested 1s,5pC 2000 V RMS Creepage Distance (External) (PDIP) mm (SOIC) eakage Current 240 V RMS 0.1 µamps 60Hz Recommended Operating Conditions Parameters Symbol Min. Max. Units Ambient Operating Temperature T A o C Supply Voltage V DD1,V DD Volts ogic High Input Voltage V IH 0.8V DD1 V DD1 Volts ogic ow Input Voltage V I Volts Input Signal Rise and Fall Times t IR,t IF 1 µsec Package Characteristics Parameter Symbol Min Typ. Max. Units Test Conditions Input-Output Momentary (5,6) V ISO 3750 V DC RH<50%, t= 1min, T A =25C Withstand voltage Capacitance (Input-Output) (5) C I-O 1.1 pf f= 1MHz Input IC Junction-to-Case (PDIP) θ JCT 150 o C/W Thermocouple located at Thermal Resistance (SOIC) θ JCT 240 o C/W center underside of package Package Power Dissipation P PD 150 mw 2

3 I710ISOOOP Electrical Specifications Electrical Specifications are T min to T max unless otherwise stated. Parameter Symbol Min Typ. Max Units Test Conditions DC Specifications 3.3V 5V 3.3V 5V 3.3V 5V Input Quiescent Supply Current I DD1 10 µa Output Quiescent Supply Current I DD ma ogic Input Current I I µa ogic High Output Voltage V OH V DD2-0.1 V DD2 V I O =-20 µa, V I =V IH 0.8*V DD2 V DD2-0.5 I = -4 ma, O V I =V IH ogic ow Output Voltage V O I V O = 20 µa, V I =V I I = 4 ma, O V I =V I Switching Specifications at 25 o C Clock Frequency fmax MHz C Data Rate MBd C Pulse Width PW ns Propagation Delay Input to Output (High to ow) t PH ns C Propagation Delay Input to Output ( ow to High) t PH ns C Propagation Delay Enable to Output (High to High Impedance) t PHZ ns C Propagation Delay Enable to Output (ow to High Impedance) t PZ ns C Propagation Delay Enable to Output (High Impedance to High) t PZH ns C Propagation Delay Enable to Output (High Impedance to ow) t PZ ns C Pulse Width Distortion (2) tph- tph PWD ns C Propagation Delay Skew (3) t PSK ns C Output Rise Time (10-90%) t R ns C Output Fall Time (10-90%) t F ns C Common Mode Transient CMH Immunity (Output ogic High or kv/µs Vcm = 300V ogic ow) (4) CM Electrostatic Discharge Sensitivity This product has been tested for electrostatic sensitivity to the limits stated in the specifications. However, NVE recommends that all integrated circuits be handled with appropriate care to avoid damage. Damage caused by inappropriate handling or storage could range from performance degradation to complete failure. 3

4 I710ISOOOP Notes: 1. Absolute Maximum ambient operating temperature means the device will not be damaged if operated under these conditions. It does not guarantee performance. 2. PWD is defined as t PH - t PH. %PWD is equal to the PWD divided by the pulse width. 3. t PSK is equal to the magnitude of the worst case difference in t PH and/or t PH that will be seen between units at 25 O C. 4. CM H is the maximum common mode voltage slew rate that can be sustained while maintaining VO > 0.8 V DD2. CM is the maximum common mode input voltage that can be sustained while maintaining VO < 0.8 V. The common mode voltage slew rates apply to both rising and falling common mode voltage edges. 5. Device is considered a two terminal device: pins 1-4 shorted and pins 5-8 shorted. 6. Input - Output Momentary Withstand Voltage is a dielectric voltage and should not be interpreted as an input - output continuous voltage. Application Notes: Power Consumption The I710 achieves its low power consumption from the manner by which it transmits data across its isolation barrier. By detecting the edge transitions of the input logic signal and converting this to a narrow current pulse which drives the isolation barrier, the isolator then latches the input logic state in the output latch. Since the current pulses are narrow, about 2.5 ns wide, the power consumption is independent of mark-to-space ratio and solely dependent on frequency. This has obvious advantages over optocouplers whose power consumption is heavily dependent on its on state and frequency. The static power consumption for the I710 in either state approaches the CMOS quiescent value. Power Supplies It is recommended that low ESR ceramic capacitors be used to decouple the supplies. 10nF capacitors should be placed as close to the device as possible between V DD1 and GND 1, as well as between V DD2 and GND 2. Signal Status on Start-up and Shut Down To minimize power dissipation, the input signal to the I710 is differentiated and then latched on the output side of the isolation barrier to reconstruct the signal. This could result in an ambiguous output state depending on power up, shutdown and power loss sequencing. Therefore, the designer should consider the inclusion of an initialization signal in his start-up circuit. 4

5 I710ISOOOP Timing Diagram 50% V IN t PH t PH 90% 90% t PZ 50% t PZ V O t PZH 10% 10% t PHZ t PW t F t R VOE egend t PH t PH t PW t PZ t PZH t PHZ t PZ t R t F Propagation Delay, ow to High Propagation Delay, High to ow Minimum Pulse Width Propagation Delay, ow to High Impedance Propagation Delay, High Impedance to High Propagation Delay, High to High Impedance Propagation Delay, High Impedance to ow Rise Time Fall Time Pin Connections 1 V DD1 Input Power Supply 2 V I ogic Input Signal 3 NC No Internal Connection 4 GND 1 Input Power Supply Ground 5 GND 2 Output Power Supply Ground 6 V O Output ogic Signal 7 V OE ogic Output Enable 8 V DD2 Output Power Supply V DD1 V DD2 1 8 V I NC 2 3 H Isolation 7 6 V OE V O Barrier GND GND 2 5

6 I710ISOOOP I710-3 (Small Outline SOIC-8 package) (4.80) (5.00) (0.40) (3.80) (1.27) (5.80) (4.00) (6.20) (0.25) (0.50) x (0.33) (0.51) (0.19) (0.25) (1.37) Dimensions: inches (mm) min max (1.75) (0.10) (1.016) (0.25) (1.524) I710-2 (8-Pin PDIP Package) (6.096) (6.604) Dimensions: inches (mm) min max (9.398) (10.160) (7.366) (7.874) 0.55 (1.397) 0.65 (1.651) (3.048) (3.810) (0.203) (0.381) (0.381) (0.762) (1.143) (0.380) (0.584) (1.143) (0.889) (2.286) (2.794) (7.620) (9.398) (1.651) Ordering Information: Order parts per the above numbers. 6

7 I710ISOOOP Applications Isolated PROFIBUS / RS-485 +V DD1 TXD I710 +V ISO V CC D R T RS-485 Truth Table TXD RTS A B RXD 1 0 Z Z X 0 0 Z Z X I710 DE RXD RE R RE A B I710 GND RTS Reference 485 Drivers (Texas Instruments) 65AS176 (-40 C to +85 C) 75AS176 (0 C to +70 C) GND 1 GND ISO V DD1 and V DD2 should be decoupled with 10nF capacitors at I710 supply pins Isolated DeviceNet / CAN Transceiver V DD1 TXD I710 V ISO TXD GND TXD CANH CAN BUS RXD 0 high low dominant 0 1 floating floating recessive 1 R S CANH RXD I710 V CC RXD PCA82C251 V REF CAN Reference controller Philips Electronics N.V. GND 1 GND ISO V DD1 and V DD2 should be decoupled with 10nF capacitors at I710 supply pins 7

8 About NVE An ISO 9001 Certified Company NVE Corporation is a high technology components manufacturer having the unique capability to combine leading edge Giant Magnetoresistive (GMR) materials with integrated circuits to make novel electronic components. Products include Magnetic Field Sensors, Magnetic Field Gradient Sensors (Gradiometer), Digital Magnetic Field Sensors, Digital Signal Isolators and Isolated Bus Transceivers. NVE is a leader in GMR research and in 1994 introduced the world's first products using GMR material, a line of GMR magnetic field sensors that can be used for position, magnetic media, wheel speed and current sensing. NVE is located in Eden Prairie, Minnesota, a suburb of Minneapolis. Please visit our Web site at or call for information on products, sales or distribution. NVE Corporation Valley View Road Eden Prairie, Mn USA Telephone: (952) Fax: (952) Internet: isoinfo@nve.com The information provided by NVE Corporation is believed to be accurate. However, no responsibility is assumed by NVE Corporation for its use, nor for any infringement of patents, nor rights or licenses granted to third parties, which may result from its use. No license is granted by implication, or otherwise, under any patent or patent rights of NVE Corporation. NVE Corporation does not authorize, nor warrant, any NVE Corporation product for use in life support devices or systems or other critical applications. The use of NVE Corporation s products in such applications is understood to be entirely at the customer's own risk. Specifications shown are subject to change without notice. ISB-DS-001-I710-B

High Speed Dual Digital Isolator. Features. Isolation Applications. Description

High Speed Dual Digital Isolator Functional Diagram IL711 IL712 Features +5V/+3.3V or +5V only CMOS/TTL Compatible High Speed: 110 MBaud 2500VRMS Isolation (1 min) 2 ns Typical Pulse Width Distortion 4