Design of Padless MOUSE System with MEMS Accelerometers and Analog Read-Out Circuitry

Size: px
Start display at page:

Download "Design of Padless MOUSE System with MEMS Accelerometers and Analog Read-Out Circuitry"

Transcription

1 Design of Padless MOUSE System with MEMS Accelerometers and Analog Read-Out Circuitry Seungbae Lee, Gi-Joon Nam, Junseok Chae, and Hanseup Kim Department of EECS University of Michigan Ann Arbor, MI Abstract A hybrid two-dimensional position sensing system is designed for mouse applications. The system measures the acceleration of hand-movements which are modulated and converts them into two-dimensional location coordinates. To achieve this, the system consists of four major components: 1) MEMS accelerometers, 2) CMOS analog read-out circuitry, 3) an acceleration magnitude extraction module and 4) a 16-bit RISC microprocessor. An unique verification method is conducted on the designed system using a specialized instruction. Mechanical and analog simulation shows that designed padless mouse system can detect acceleration as small as 5.3 mg., and thus it is applicable to mouse system. I. INTRODUCTION Most of commercial MOUSE systems are built employing a ball or optical technique to provide cursor positions. For example, a ball mouse system detects physical rolling movements of the ball, which are affected by a non-flat or obstructed surface. An optical mouse system avoids these environmental factors by detecting the reflection of light instead of physical contacts on reflective supplementary pad. Both types of mouse require a special surface limiting the working space and freedom of user s movements. Obviously, a more desirable mouse system will be the one that is not restricted by any circumstantial factors. In this paper, we describe a novel mouse system design which detects two-dimensional positions without any contacts on additional components such as pads. The system consists of four major components: 1) MEMS (Micro Electro Mechanical Systems) accelerometers, 2) CMOS analog read-out circuitry, 3) an acceleration magnitude extraction module, and 4) a 16-bit RISC microprocessor. Figure 1 presents the block diagram of overall hybrid mouse system. Two MEMS accelerometer devices are employed to measure X and Y-axis acceleration of the movements from the user's hand. These acceleration values are pulse-width modulated by the CMOS analog read-out circuitry and will be converted into (X, Y) coordinates on the screen by performing integral operations on a 16-bit RISC microprocessor. In this design, we present a hybrid configuration system, which means each component is not based on the same substrate and thus has to be interfaced with each other by means of external connection such as wire bonding. MEMS device is designed in S.O.G. (licon On Glass) configuration, the MEMS Process (U of M) + Analog Circuit Process (U of M) + Digital Circuit Process (MOSIS) X-direction MEMS Accelerometer Read Out Analog Circuit Feedback magnitude extractor a x dt (X,Y) Y-direction MEMS Accelerometer Read Out Analog Circuit Feedback magnitude extractor a y dt screen Figure 1. Block diagram for the hybrid MOUSE system.

2 analog readout circuit is designed in a 2-poly 1-metal process, and the digital microprocessor is designed in a 1-poly 2-metal MOSIS process. More interestingly, the system can be handily extended into a three-dimensional position detection system by adding an additional MEMS accelerometer to measure Z-axis directional movement. The rest of this paper is organized as follows. Section II presents the overall system architecture and explains each module in detail. Section III describes the verification and testing methodology for our system. Section IV presents statistical data of the final design and Section V describes the future work relevant to monolithic implementation of all the components. Finally, concluding remarks are given in Section VI. II. SYSTEM OVERVIEW 2.1 System Requirements and Constraints Two system requirements stand out for consideration: speed and accuracy. Generally the speed of physical reaction from a human is remarkably slow compared to the speed of a modern microprocessor and it is reported that the magnitude of an action is at most order of 10-2 seconds [1]. nce the mouse system must be able to generate (X, Y) coordinate values faster than this rate, the target clock frequency was chosen to be 100 khz, which provides 500 instructions per coordinate calculation. In terms of movement accuracy, the finest acceleration from a human s hand is bigger than 10 mg. (g=9.8m/s 2 ). One of the most important figure of merit in MEMS accelerometer is the sensitivity which is defined as the capacitance variation per gravity change. The capacitance change due to acceleration input is detected and converted to voltage in analog read-out circuits. Accordingly, together with MEMS accelerometer s sensitivity, the gain and equivalent input noise of analog read-out circuits determine the overall minimum detectable acceleration. Taken this into account, the analog read-out circuits and MEMS accelerometer are designed to detect acceleration as small as 5 mg., implying that potentially our system can catch any smallest movement a human being can perceive. Consequently, our system specification proves that it is fast and precise enough to reflect a variety of movements from a user. As far as power concerned, small power can be estimated due to small operation frequency. However, power will become one of big issues when padless system is to be also wireless because of the large power transmitter needs. 2.2 Design Methodology As shown in Figure 2, comb structure was chosen for MEMS accelerometer design because it gives more sensitivity due to large sensing capacitance depending the number of comb fingers. The device dimensions were obtained by optimization with smaller size and larger sensitivity. After Figure 2. S.O.G MEMS accelerometer. optimization, its functionality was verified using ANSYS. For the analog read-out circuit design, switched capacitor circuits were chosen since they make it easier to interface between analog and digital parts. All the analog circuit designs were simulated on HSPICE environment and laid out using Mentor Graphics software. Considering the challenges and difficulties that can be encountered in VLSI design, a strict design methodology was established. First, the system was hierarchically specified in a top-down fashion so that a module at a higher level is decomposed into several sub-modules in the next lower level (top-down specification). After all the necessary modules were identified, each module was carefully designed from the bottom and linked together to form a super-module at a higher level (bottom-up design). Every module was fully tested for functionality followed by LVS (Layout vs. Schematic) and parasitic extraction for layout and timing verification. After all three verification procedures were satisfied modules were instantiated and used at a higher level of the design hierarchy. The majority of modules- the datapath of the microprocessor, analog circuitry and MEMS device - were fully custom designed while some modules of the microprocessor controller were designed using Verilog HDL. The layout was designed with the objectives of low power and easy modification in mind. Proper pitch matching was maintained for every cell in the datapath. In order to reduce cross-coupled parasitic capacitance, polysilicon and metal-2 paths were run vertically while metal-1 was used only for horizontal runs. These efforts benefited to produce a fully functional and fast system that occupies small area. 2.3 Operational Overview Figure 1 shows an operational block diagram of the mouse system. When a user moves the mouse in an arbitrary direction, the acceleration is decomposed into X- and Y-axis acceleration component and each of them is measured by a corresponding MEMS accelerometer". The actual acceler-

3 ation value is represented by differential capacitance between two capacitors in the MEMS device. This capacitance value is used in two different ways. First it is fed back to the MEMS device to reset it so that we can measure the next acceleration without any bias. Second, the capacitance value is fed into CMOS analog read-out circuitry that modulates it into digital pulse-width modulated output voltage. The polarity of the pulse (either positive or negative) determines the direction of the acceleration and the width of the pulse is proportional to the magnitude of the input acceleration. An "acceleration magnitude extractor" changes the generated pulse width into the units of system clock frequency, which will be used by a microprocessor to calculate the exact position coordinate values on the screen. The MEMS accelerometer was designed and fabricated in university of Michigan with MEMS technology. The analog CMOS circuitry was also designed and fabricated in university of Michigan with single metal/double poly process. Digital circuits for microprocessor was designed by MOSOS process with double metal and one poly. In the next section, each module is explained in details. 2.4 MEMS Accelerometer Considering a sensing method, there are three different types of MEMS accelerometer. The first type is a piezoelectric device which uses a piezoelectric material to sense an acceleration [2]. The second type is a tunneling device which utilizes tunneling as a sensing method [3]. The last one is a capacitive accelerometer which measures capacitor changes to detect acceleration [4, 5]. For our mouse system, we have used a capacitive accelerometer since it provides high sensitivity, good DC response, low drift, low temperature sensitivity, low-power dissipation, and a simple structure [6]. A schematic top view of MEMS accelerometer is shown in Figure 5. The device utilizes conventional comb drive structure, and it generates two capacitance signal C left and C right which are transferred to the analog readout circuitry. There are several MEMS accelerometers with comb drive configuration. In this design, S.O.G. (licon On Glass) configuration is chosen in order to take advantage of robustness and the simplicity of design. Figure 2 shows the structure of a S.O.G. lateral accelerometer [4]. A MEMS accelerometer consists of two major components: a proof mass and sensing electrodes. A proof mass is connected to a frame which is anchored to a glass substrate with suspension beams. nce the proofmass is suspended over recess on a glass substrate with serpentine suspesion beams, it is free to move with a response to external acceleration. On the other hand, electrodes are attached to the glass substrate to be stationary. When external forces are applied to the accelerometer (by the user s hand movement, for example), the proof mass moves against the forced Figure 3. Fabrication process sequence direction due to an inertia force while the electrodes are stationary. The movements cause capacitance variations between the comb fingers which form parallel plate capacitors, denoted as C. One side of the comb fingers generates a positive variation ( + C 2 ), and the other side produces a negative one ( C 2 ) simultaneously. The total capacitance change is the difference between these two values [( C 2) ( C 2) ]. Therefore, the external acceleration is converted to the differential capacitance variation which can be expressed as: C ( pf g) 9.8 M = C k d s 0 (eq. 1) where M is the mass of a proof mass, C s is the rest capacitance, d 0 do is the sensing gap distance, and k is the spring constant of suspension beams [5]. From (eq. 1), it can be expected that heavy accelerometer with large number of comb fingers and flexible(i.e., small spring constant) structure generates good sensitivity, although it is difficult to fabricate such accelerometers. With device dimensions of 2.1 mm width, 2.4mm length and 100 µm height polysilicon proof mass, it gives 0.78 pf/g sensitivity. For the twodimensional mouse system, two lateral accelerometers are required for sensing X and Y-axis accelerations. The fabrication process is a 5 step process requiring only 3 masks. Figure 3 shows the cross section of the wafer for each fabrication step. In the first step, a recess is formed on the glass substrate (a). Then, the glass wafer with recess is anodically bonded to a silicon wafer (b). Next, the silicon wafer is thinned to desired thickness with CMP (Chemical Mechanical Polishing) (c). Finally, metal contacts are evaporated (d) and followed by Deep RIE etch (e). Figure 4 shows SEM (Scanning Electron Microscope) picture of a MEMS accelerometer taken after fabrication.

4 anchors proofmass sensing electrodes Figure 4. Top view of a MEMS accelerometer. 2.5 CMOS Analog Read-Out Circuits suspension beams fingers The detected acceleration, which represents a differential capacitance variation from the MEMS accelerometer, is modulated to pulse-width by the analog read-out circuitry shown in Figure 5. In general, the lateral accelerometer presented in Section 2.4 can be operated either in open-loop mode or closed-loop mode. In closed-loop operational mode, the overall performance such as linearity, dynamic range, and bandwidth are improved [5]. In our design, an electromechanical oversampled modulator is used because it provides direct digital output and force feedback control of the proof mass simultaneously over a wide dynamic range. Among various classes of electromechanical modulators, a switched capacitor front-end type, shown in Figure 5 (a), is chosen because it is insensitive to the input parasitic capacitance. An efficient gain and offset compensated integrator is obtained by using an offset-storage C O, so called correlated double sampling (CDS) technique[7]. This circuit uses a single-ended charge integrator to read out the capacitance variation, and the static comparator forms the loop quantizer. Finally, a digital flip-flop samples the output from the comparator and synchronizes its bit stream with the system clock. nce the proof mass can be modeled as a second order system, closed loop system becomes unstable. To prevent this instability, simple lead compensator, H c (z), is inserted in the feedback path. There are basically three clock phases in the switched-capacitor interface circuit. During the first phase (φ 1 ), the sense capacitors formed between electrodes and proofmass, are reset and the OP-amp offset voltage is stored on C O. In the second phase (φ 2 ), sense capacitors, C right and C left, are charged through V+ and V-. The charge difference between C right and C left is integrated on the feedback capacitor, C i, while the comparator quantizes the charge. In this phase, the offset voltage stored in C O is substracted and thus the output voltage of OP-amp is compensated for the non-ideal OP-amp offset voltage. The amplitude of OP-output voltage corresponds to the magnitude of applied acceleration. For example, if the MEMS device gets positive acceleration, then the proofmass is closer to the left anchor of MEMS accelerometer and C left is bigger than C right. nce C left is connected to the negative reference voltage (V-), the negative net charge is sampled to an integrator, generating positive OP-amp output voltage. The capacitance sensitivity defined as the OP-amp output voltage due to input capacitance change ( C )is calculated by: V O C = ( V+ V - ) C i (eq. 2) From this (eq. 2), the capacitance sensitivity is approxi- Integrator V+ V- φ 4 φ 1 C right C left φ 4 φ 1 φ 1 φ 2 C φ o 1 φ 4 φ 1 Comparator C i Bit Stream d q FF clk φ 1 φ 2 φ 3 Reset Sense Feedback Compensation 2-z -1 MEMS Accelerometer φ 3 Compensator φ 2 H c (z) = 2-z -1 Flip-Flop (a) gma-delta electro mechanical modulator circuit schematics φ 4 10 µsec (b) clock phases Figure 5. gma Delta Electro Mechanical Modulator with clock phases

5 Switches Op-Amp Buffer Integrator Output Capacitor Comparator D-flipflop PWM gnal Clock Generator Figure 6. HSPICE simulation for analog read-out circuit. mately 0.33 V/pF. The quantized output is also latched at the end of this phase. In the last phase (φ 3 ), the output of the flipflop is fed back to the MEMS accelerometer to place the proof mass in the nulling position by electrostatic forces. If the proofmass gets positive accelerations, then the output of comparator will be positive because of its voltage inversion. This supply voltage is applied to proof mass to make the proofmass get back to the nulling position by electrostatic forces. The additional phase (φ 4 ) is used for the control and sensing of the proofmass. The output of the latch forms pulse bit streams for the next module. Figure 6 shows the HSPICE simulation result of modulation of acceleration magnitudes into the corresponding digital pulse bit streams (PWM signal). As the acceleration changes, capacitance differences between proof mass and electrodes are sensed and the corresponding charge is integrated with a 90-degree phase lag. The integrated charges are reflected to the voltage at the output and passed through the comparator generating a PWM signal. The layout for analog read-out circuit shown in Figure 7 is composed of all the components such as switches, amplifier, comparator, D- flip flop and clock generator. 2.6 Noise Analysis of Closed Loop System There are several noise sources that come from switched capacitor circuit as well as MEMS accelerometer and affect the performance of overall system. In other words, these noise sources determine the minimum detectable input acceleration (or resolution). In an oversampled electromechanical sigma-delta system, higher sampling rates reduces the quantization noise, and also result in 3 db signal-tonoise ratio improvement for each doubling of the sampling frequency. From the sensitivity of accelerometer and capacitance sensitivity, the equivalent input noise in terms of acceleration can be calculated. Followings describe each noise source. Brownian noise: Figure 7. Layout for gma-delta analog readout circuitry. (die size: 4.5mm x 2.6mm) The primary mechanical noise source for the device is due to the Brownian motion of gas molecules between comb fingers. The total noise equivalent acceleration (TNEA) [ m ( s 2 Hz) ] [6] is TNEA 4K B TD = = M 4K B Tw r QM (eq. 3) where K B is the Boltzmann constant and T is the temperature in kelvin. From (eq. 3), it is seen that MEMS accelerometer has smaller Brownian noise with larger-q and heavier proof mass. Plugging in device data into this equation, we can calculate the Brownian motion noise around 10 µg Hz Amplifier noise: The readout circuitry utilizes correlated double sampling to reduce the input CMOS amplifier flicker noise. However, the amplifier thermal noise is amplified by the ratio of total input capacitors including parasitics to the integrating capacitor. The noise at the output of amplifier can be expressed by integrating the total noise power and divide it by effective noise bandwidth, which is half of sampling frequency. Therefore, the amplifier output noise voltage due to thermal noise in OP-amp is expressed as: V Amp C T 16 kt 1 out = [ V Hz ] (eq. 4) 3 C i C out where C T is the total input capacitance including parasitics, C out is the capacitance of OP-amp output node, f s is the sampling frequency. From this equation, the equivalent input acceleration noise due to amplifier thermal noise is about 0.7 µg Hz. f s

6 KT/C noise: A major noise source in switched capacitor circuits is KT/ C noise which is generated by the CMOS switch thermal noise. The rms voltage noise from thermal switch noise can be calculated by the integration of the bandwidth of switch s RC filter. This rms value is KT/C as the noise name suggests. The voltage noise power density due to this switch thermal noise is expressed as: V SC kt 2 out = [ V Hz ] (eq. 5) C i f s This KT/C voltage noise is converted to the equivalent input acceleration noise as 0.3 µg Hz. Mass residual motion noise: The proof mass is being rebalanced by a pulse train and thus it has a residual motion with small ac amplitude. The amplitude of this motion can be shown [8] to be approximately equal to x = 4 a max /(πf s ) 2 = 8.0x10-9 [m] with a max =20g and f s =100kHz. This residual motion corresponds to equivalent rms 78 mg acceleration in this MEMS accelerometer. This acceleration can be randomized due to the varying input and hence it can be considered to be noise distributed uniformly from dc to the proof mass residual motion frequency, f s /4. This noise is then equivalent to 500 µg Hz. Dead Zone Noise: Assuming that the input of the accelerometer is zero, the feedback voltage generates a max with frequency f s /4 because of electrostatic force. Therefore, input signal must be large enough to break this dead-zone pattern. The minimum rms input acceleration for this is a dead-zone = 8a max (f r /f s ) 2 = 160 µg, and should be countered as noise. Total noise and Minimum detectable acceleration: nce all of the noise sources considered here are uncorrelated, the total noise is obtained simply by summing all the noise sources as 530 µg Hz. Therefore, the minimum detectable acceleration is same as the one calculated by integrating this input acceleration density over bandwidth of interests, ~100 Hz. The resultant minimum detectable acceleration is 5.3 mg, which is below the range of smallest acceleration a human can generate/perceive. From the noise source consideration, we can see that the mass residual noise dominates with order of magnitude. however, this mass residual motion noise can be significantly reduced by just increasing sampling frequency at the cost of power consumption and complexity. 2.7 Magnitude Extractor The modulated pulse bit stream from the CMOS analog Y axis t 1 t 2 t 0 t 3 X axis of X t0 t1 t2 Time read-out circuit is converted into binary data for further processing. Two types of data should be extracted from the pulse bit streams: 1) the polarity and 2) the magnitude. The polarity information indicates the direction of acceleration, and can be handily extracted by observing the sign of pulse bit streams. For example, Figure 8 illustrates the movements of the mouse and corresponding acceleration values on both X- and Y-axis. It also shows the possible PWM (Pulse Width Modulation) bit streams. If the value of the pulse is 5 volts (digital value "1"), the acceleration is toward the positive direction, and vice versa. The width of bit pulse streams is proportional to the magnitude of acceleration. The extraction of correct magnitude of acceleration can be achieved via two binary flags (flip-flops) and a binary counter as shown in Figure 9. The "c" flag is set to the polarity of current input pulse bit stream synchronized by the system clock while "p" flag value is the one shifted from "c" flag flip-flop in the previous clock cycle. The comparator compares the two flag values and whenever two flag values differ-- e.g., the polarity of input stream changes--, it loads the current value of binary counter into the buffer register called " Register" and at the same time, it resets the counter. While "c" and "p" flag flip-flops have the same value, the counter keeps increasing or decreasing based on the value of "c" flag 0 of Y 0 t0 t1 t2 t3 t3 PWM Pulse PWM Pulse Time Figure 8. Movements of a mouse and corresponding accelerations in X- and Y-axis. Load Modulated Bit Stream C flag Comparator P flag Up-Down Counter Register N flag Reset To µprocessor Figure 9. Magnitude Extractor.

7 flip-flop. Thus, the magnitude of generated values is proportional to the degree of the acceleration of movements, and the polarity of the input bit steams determines the direction of user s movements. In other words, the positive value of the counter corresponds to the positive acceleration while the negative value indicates the reverse acceleration. The "acceleration register" always keeps some static values specifying the previous acceleration magnitude and the control microprocessor only accesses this register to calculate the current position of cursor. Whenever the acceleration register loads a new value from the counter, the "n" flag flipflop is set to "1" indicating that the new value has been loaded. The control microprocessor keeps polling "n" flag flip-flop to decide whether it should fetch a new acceleration value or not. The layout for acceleration magnitude extractor is assembled together with core microprocessor shown in Figure Core Control Microprocessor The core control microprocessor is designed to filter the acceleration output from analog read-out circuits within the bandwidth of interests to remove the quantization noise folded at higher frequency and other noises. This can be done with simple FIR low pass filter with ~100 Hz cut-off frequency. Also, microprocessor calculates the position coordinates based upon the magnitude values of the acceleration from the acceleration extract module. The processor is based on RISC concepts and is implemented as a two-stage pipeline (Figure 10). It uses a 16-bit word and address space Instruction Memory PC FETCH Instruction Reg. Displacement Addr. A Addr. B/WR Immediate Decode Registers (a x,a y ) Register File EXECUTE Data Memory Figure 10. Core microprocessor architecture. PC Screen and all instructions are single word. In addition to the basic instructions such as arithmetic and logical operations, two application specific instructions are implemented which will be described below. The main part of the application program consists of two procedures: 1) polling and 2) integration. For the polling procedure, a special instruction is defined called LCNT (Load Counter Value). When LCNT is executed, the core control microprocessor examines the value of the "n" flag ALU Shifter flip-flop in the previous acceleration extract module. If the value of the flip-flop is "1", the value of the acceleration register is transferred into one of registers in the datapath module, which will be integrated for coordinate calculation. At the same time, the "n" flag flip-flop is reset to "0" by the microprocessor to indicate the completion of a transferring operation. The transferred acceleration magnitude value should be integrated twice so that it is transformed into position coordinates as shown in the following equation: t 2 t 1 t 2 t 1 v = ( a) dt, p = ( v) dt = ( a) dt (eq. 6) where vap,, represent velocity, acceleration and position coordinate respectively. In stead of implementing the integration operation, it is performed via two normal addition instructions: v = v+ a and p = p + v. nce the system has abundant instruction cycles per coordinate calculation as pointed out in Section 2.1, this system design decision is justified. The other implemented application-specific instruction is called SROUT. SROUT is the instruction which ships out calculated coordinate values to 16-bit system interface bus. To minimizes the interface with outside circuitry, instruction memory (ROM) as well as data memory (RAM) have been integrated into the core microprocessor module, which helped a lot to reduce the number of pins. Both ROM and RAM are the sizes of 256 words. Thanks to the simplicity of application program, 256 words were big enough to contain the entire application program. 2.9 Timing Scheme and Critical Paths The general timing strategy of the core microprocessor is based on two stage-pipelined operations. The clocking in this micro controller is predominantly positive edge-triggered except the program counter. The program counter is a negative edge-triggered component to allow enough instruction memory access time between t 1 and t 2 as illustrated in Figure 11. At time t 2, an instruction is loaded into the t 1 t 2 t 3 t 4 Instruction Memory Access Decoding Execution PC Incremented Instruction Fetch Control gnal Stabilized Register File Write Back instruction register, and between t 2 and t 3, the newly fetched instruction is decoded. In our design, every control signal is latched (as shown at time t 3 ) to provide stabilized control t 2 t 1 Figure 11. Timing strategy.

8 signals for safe execution of the instruction during the next clock cycle from t 3 to t 4. In other words, the entire clock period is dedicated to execute one instruction. Finally at time t 4, the result of the execution is written back to either the register file or the data memory. The rationale behind this timing strategy is to distribute major timing loads to different clock cycles evenly resulting in the reduced clock period. Our microprocessor design does not have separate MAR (Memory Address Register) and MDR (Memory Data Register) because both of instruction memory (ROM) and data memory (RAM) are integrated together with the processor. Thus, the executions of memory access instructions (Load/ Store) are very similar to those of register transfer instructions (Mov/Movi), which simplifies the system architecture. Through extensive simulation, the paths from the register file to ALU were determined to be critical because the register file is the largest component and the ALU has a ripplecarry adder in it (Figure 12). The ALU delay time is Figure 12. Timing delay for the critical path. ns which is measured from the rising clock edge to the point when the calculated data is valid on the system data bus. This critical path permits a maximum clock frequency of approximately 18 MHz, which is well above the target frequency of 100 khz. Recalling that the application target frequency dictates the maximum critical delay, the ripple-carry adder showed adequate performance in this regard and a faster ALU was not necessary. III. VERIFICATION AND TESTING 3.1 Verification and Testing Methodology Verification and simulation were performed using the Mentor Graphics Tools. Mentor Quicksim Pro and gnalscan were used for functional verification of initial transistor level and Verilog modules respectively. Parasitics were extracted from the layout, and Accusim used for the detailed delay and loading effects. Timing information from the parts generated in Epoch [14] was extracted automatically during the import process to Design Architect. Once the functional models were properly back annotated, timing verification was performed in Quicksim Pro. In order to verify the physical design, full mask LVS was performed by importing the custom datapath into Epoch and generating a netlist for the entire core that included the custom and Epoch-synthesized parts. 3.2 Design for Testability Two primary features were added to assure the testability of the system. The first design-for-testability feature is scannable registers. The program counter and the instruction register are the most critical sections of the core since they determine the instructions that are executed internally. Therefore, a scan-chain testing design has been implemented for these registers. Once scan mode is set by asserting high at the testing mode input pin, input data for both of registers are loaded, specified operations are performed, and the outputs of operations can be scanned out serially. The second feature is the special testing instruction SROUT (which is the same one with the application specific instruction described in Section 2.8). This instruction ships out the specified register value to 16 bit output pins (SOUT[15:0]) allowing us to observe any arbitrary register values of the register file during the testing mode. Thanks to these two design-for-testability features, the contents of both of instruction and data memory were verified efficiently. By applying instruction addresses at the program counter and observing the values of instruction register via scan-chain testing mode, the correctness of the instruction memory (ROM) were verified. For the data memory (RAM), we verified them by moving contents of a specific memory location into one of the register in the register file and transferring them to the system interface bus via SROUT instruction. Indeed, all the important digital modules were able to be verified with the help of the special instruction SROUT and the scan-chain design. IV. FINAL DESIGN STATISTICS MEMS accelerometer was designed to have characteristics such as sensitivity with 0.78 pf/g, dimensions as 2.1mm

9 x 2.4mm x 100 µm (= width x length x height), and sensing capacitance of 16.4 pf. The analog circuit has estimated power of 3 mw, capacitance sensitivity as 0.3 V/pF, and die size of 4.5mm x 2.6mm. Mechanical and analog simulation shows that the designed padless mouse system can detect acceleration as small as 5.3 mg, which is a high enough resolution for mouse applications. The core control microprocessor shown in Figure 13 contains two distinct components; the custom datapath and the control module generated in Epoch as described previously. The important design statistics for microprocessor are as follows. The total transistor number is 53634, and the die size is 5573 by 5761 µm. Although maximum achievable clock speed is 18.1 MHz, its operation frequency is same as sampling frequency of analog switched capacitor sigma-delta read-out circuits. The power consumption is estimated as 10 µw at 100 khz operation frequency. V. MONOLITHIC IMPLEMENTATION The hybrid two dimensional position detection system has been proposed to combine MEMS accelerometers and digital circuits by means of switched capacitor circuits using wire bonding. Due to the wire being bonded, however, these different modules in a system must interface with each other at board level. This not only limits the size of a system, a mouse in this paper, but also contributes capacitive or resistive parasitics that may degradate the system performance [15]. To circumvent these drawbacks of hybrid system, a system-on-chip (SOC) design and fabrication, where all the modules are fabricated in single wafer, are considered as a ROM Y ACC X ACC CONTROL RAM DATA PATH Figure 13. Microprocessor layout. (5.6mm x 5.8mm) monolithic implementation. In other words, all the necessary modules such as MEMS accelerometers, the analog read-out circuit and the microprocessor are to be integrated on the same wafer without any interfaces between them. The only major interface with outside circuits-other than VDD, GND, clock and reset signals- is the parallel data bus which transfers positional coordinates calculated from the microprocessor. nce they are fabricated on the same wafer eliminating complex steps for the interface, the overall costs are greatly reduced. With all these advantages over hybrid system, however, monolithic system has several problems such as noise between analog and digital circuits, interconnections between MEMS devices and analog circuits, and so on. One of the main factor for a noise problem in monolithic system stems from the fact that the analog and digital circuits are sharing the same substrate. Although substrate has high resistance, it is not a complete isolator and thus voltage variations in digital parts are capacitively coupled to analog circuits and thus may cause malfunctions of a system. This noise problem due to the substrate coupling can be solved by using licon-on-insulator (SOI) which isolates one module from the other by etching the substrate boundaries of each module and making it isolated both physically and electrically. And more, MEMS accelerometers and analog circuitry can be connected to each other by making deep trenches. It is reported that the silicon substrate underneath interconnection materials such as metals can be removed in the process of deep trench etching because of a sidewall etching effect [16]. The detailed fabrication process flow for monolithic implementation combining MEMS devices, analog and digital circuits are basically post CMOS fabrication, presented in Figure 14. The usual CMOS processes are done using SOI start-wafer as shown in Figure 14(a) and (b). After CMOS processes, deep trenches are made for the formation of proofmass of MEMS accelerometer as well as isolation between analog and digital circuitry as given in Figure 14(c). Figure 14(d) presents the release step by removing O 2 with BHF to suspend the proofmass. During release, the O 2 between analog/digital circuitry are also etched away. Figure 15 shows the mask level MEMS structure. Close-up view shows a interconnection line, contacts, suspension beams, and etch holes which help releasing proofmass during BHF etch process. VI. CONCLUSION In this paper, we presented a novel two-dimensional position detection system for padless mouse applications that do not require any contacts for proper mouse operation. The design requirements were carefully examined and the systematic design methodology was established. The final system consists of four major components: 1) MEMS

10 O 2 (a) SOI wafer interconnection device. Also, we wanted to point out that the system could simply be extended to three-dimensional position detection system by additionally integrating a MEMS accelerometer device along another direction. Finally, we discussed a SOI implementation possibility of the mouse system design for future work. Analog Circuitry O 2 (b) Analog/Digital CMOS process Anchors Proofmass + Elctrodes Figure 14. Process flow of monolithic implementation. accelerometer, 2) Analog read-out circuit, 3) magnitude extraction module and 4) 16-bit RISC microprocessor. Each module was carefully designed, laid out, and verified through extensive simulation. The calculated and simulated minimum detectable acceleration is 0.3 mg, which is applicable to mouse system. We were able to address diverse interesting issues concerning VLSI design methodology such as SoC (System-on-Chip) design and DFT (Design-for-Testability). It was emphasized that the presented system needs no additional components other than the implemented chip itself unlike the conventional mouse Trenches O 2 (c) Deep trench etching Accelerometer O 2 (d) Release Interconnection Contact Etch hole Digital Circuitry Suspension beams Sensing gap Figure 15. MEMS accelerometer for monolithic implementation. REFERENCES [1] HUMAN.PP.HTM [2] L. M. Roylance and J. A. Angell, "A batch-fabricated silicon accelerometer," IEEE Trans. Electron Devices, vol. ED-26, pp , Dec [3] C. Yeh and K. Najafi, "A low-voltage bulk-silicon tunneling based microaccelerometer," Tech. Dig. IEEE Int. Electron Devices Meeting (IEDM), Washington, DC. Dec pp [4] J. S. Chae, H. Kulah, K. Najafi, "A High Sensitivity licon- On-Glass Lateral µg Microaccelerometer.", Nanospace 2000, Houston, TX. [5] N. Yazdi, K. Najafi, " An All-licon ngle-wafer Fabrication Technology for Precision Micro Accelerometers", Proc. Transducers 97, pp [6] N. Yazdi, F. Ayazi, and K. Najafi, "Micromachined inertial sensors", Proceedings of the IEEE, Vol 86, pp , Aug [7] Christian C. Enz and Gabor C. Temes, "Circuit Techniques for Reducing the Effects of Op-Amp Imperfections: Autozeroing, Correlated Double Sampling, and Chopper Stabilization", Proceedings of the IEEE, vol. 84, No.11, Nov [8] B. Boser and R.T. Howe, "Surface Micromachined Accelerometers", IEEE, J. Solid-State Circuits, vol.31, no.3, pp , March [9] Ying-Che Tseng, "AC floating body effects and the resultant analog circuit issues in submicron floating body and bodygrounded SOI MOSFET's" in IEEE Electron Device Letters, vol. 46, pp , August1999. [10] Srinath Krishnan, Jerry G. Fossum, "Grasping SOI Floating- Body Effects," IEEE Circuits and Devices Magazine, July 1998, pp [11] Ghavam G. Shahidi, et al., "Partially-Depleted SOI Technology for Digital Logic," Proceedings of ISSCC, San Francisco, Feb , 1999, pp [12] Ching-Te Chuang, Pong-Fei Lu, and Carl J. Anderson, "SOI for Digital CMOS VLSI: Design considerations and Advances," Proceedings of the IEEE, Vol.86, No. 4, April 1998, pp [13] K. K. Das and R. B. Brown, "Evaluation of Circuit Approaches in Partially-Depleted SOI-CMOS, SOI Conference, Oct. 2-5, 2000, Wakerfield, MA. [14] Epoch, Epoch: Online Manuals, Cascade Design Automation Corporation, Online, [15] Weste, N.H.E. and K. Eshraghian, Principles of CMOS VLSI Design: A System Perspective, 2nd ed., Addison-Wesley Publishing Company, Massachusetts, [16] H. Xie, et al., Post-CMOS Processing for High-Aspect-Ratio Integrated licon Microstructures, Proc. Solid-State Sensor and Actuator Workshop 2000, Hilton Head, pp

ISSCC 2006 / SESSION 16 / MEMS AND SENSORS / 16.1

ISSCC 2006 / SESSION 16 / MEMS AND SENSORS / 16.1 16.1 A 4.5mW Closed-Loop Σ Micro-Gravity CMOS-SOI Accelerometer Babak Vakili Amini, Reza Abdolvand, Farrokh Ayazi Georgia Institute of Technology, Atlanta, GA Recently, there has been an increasing demand

More information

Lecture 10: Accelerometers (Part I)

Lecture 10: Accelerometers (Part I) Lecture 0: Accelerometers (Part I) ADXL 50 (Formerly the original ADXL 50) ENE 5400, Spring 2004 Outline Performance analysis Capacitive sensing Circuit architectures Circuit techniques for non-ideality

More information

Research on Low Power Sigma-Delta Interface Circuit used in Capacitive Micro-accelerometers

Research on Low Power Sigma-Delta Interface Circuit used in Capacitive Micro-accelerometers JOURNAL OF COMPUTERS, VOL. 7, NO. 10, OCTOBER 01 383 Research on Low Power Sigma-Delta Interface Circuit used in Capacitive Micro-accelerometers Yue Ruan, Ying Tang and Wenji Yao Zhejiang Shuren University,

More information

Surface Micromachining

Surface Micromachining Surface Micromachining An IC-Compatible Sensor Technology Bernhard E. Boser Berkeley Sensor & Actuator Center Dept. of Electrical Engineering and Computer Sciences University of California, Berkeley Sensor

More information

HIGH-PRECISION accelerometers with micro-g ( g, g

HIGH-PRECISION accelerometers with micro-g ( g, g 352 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 41, NO. 2, FEBRUARY 2006 Noise Analysis and Characterization of a Sigma-Delta Capacitive Microaccelerometer Haluk Külah, Member, IEEE, Junseok Chae, Member,

More information

A Two-Chip Interface for a MEMS Accelerometer

A Two-Chip Interface for a MEMS Accelerometer IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, VOL. 51, NO. 4, AUGUST 2002 853 A Two-Chip Interface for a MEMS Accelerometer Tetsuya Kajita, Student Member, IEEE, Un-Ku Moon, Senior Member, IEEE,

More information

Wafer-level Vacuum Packaged X and Y axis Gyroscope Using the Extended SBM Process for Ubiquitous Robot applications

Wafer-level Vacuum Packaged X and Y axis Gyroscope Using the Extended SBM Process for Ubiquitous Robot applications Proceedings of the 17th World Congress The International Federation of Automatic Control Wafer-level Vacuum Packaged X and Y axis Gyroscope Using the Extended SBM Process for Ubiquitous Robot applications

More information

PROBLEM SET #7. EEC247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2015 C. Nguyen. Issued: Monday, April 27, 2015

PROBLEM SET #7. EEC247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2015 C. Nguyen. Issued: Monday, April 27, 2015 Issued: Monday, April 27, 2015 PROBLEM SET #7 Due (at 9 a.m.): Friday, May 8, 2015, in the EE C247B HW box near 125 Cory. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely

More information

An Analog Phase-Locked Loop

An Analog Phase-Locked Loop 1 An Analog Phase-Locked Loop Greg Flewelling ABSTRACT This report discusses the design, simulation, and layout of an Analog Phase-Locked Loop (APLL). The circuit consists of five major parts: A differential

More information

Capacitive Sensing Project. Design of A Fully Differential Capacitive Sensing Circuit for MEMS Accelerometers. Matan Nurick Radai Rosenblat

Capacitive Sensing Project. Design of A Fully Differential Capacitive Sensing Circuit for MEMS Accelerometers. Matan Nurick Radai Rosenblat Capacitive Sensing Project Design of A Fully Differential Capacitive Sensing Circuit for MEMS Accelerometers Matan Nurick Radai Rosenblat Supervisor: Dr. Claudio Jacobson VLSI Laboratory, Technion, Israel,

More information

MEMS in ECE at CMU. Gary K. Fedder

MEMS in ECE at CMU. Gary K. Fedder MEMS in ECE at CMU Gary K. Fedder Department of Electrical and Computer Engineering and The Robotics Institute Carnegie Mellon University Pittsburgh, PA 15213-3890 fedder@ece.cmu.edu http://www.ece.cmu.edu/~mems

More information

UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency

UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency Jamie E. Reinhold December 15, 2011 Abstract The design, simulation and layout of a UMAINE ECE Morse code Read Only Memory and transmitter

More information

A design of 16-bit adiabatic Microprocessor core

A design of 16-bit adiabatic Microprocessor core 194 A design of 16-bit adiabatic Microprocessor core Youngjoon Shin, Hanseung Lee, Yong Moon, and Chanho Lee Abstract A 16-bit adiabatic low-power Microprocessor core is designed. The processor consists

More information

A new class AB folded-cascode operational amplifier

A new class AB folded-cascode operational amplifier A new class AB folded-cascode operational amplifier Mohammad Yavari a) Integrated Circuits Design Laboratory, Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran a) myavari@aut.ac.ir

More information

SILICON BASED CAPACITIVE SENSORS FOR VIBRATION CONTROL

SILICON BASED CAPACITIVE SENSORS FOR VIBRATION CONTROL SILICON BASED CAPACITIVE SENSORS FOR VIBRATION CONTROL Shailesh Kumar, A.K Meena, Monika Chaudhary & Amita Gupta* Solid State Physics Laboratory, Timarpur, Delhi-110054, India *Email: amita_gupta/sspl@ssplnet.org

More information

Comparison between Analog and Digital Current To PWM Converter for Optical Readout Systems

Comparison between Analog and Digital Current To PWM Converter for Optical Readout Systems Comparison between Analog and Digital Current To PWM Converter for Optical Readout Systems 1 Eun-Jung Yoon, 2 Kangyeob Park, 3* Won-Seok Oh 1, 2, 3 SoC Platform Research Center, Korea Electronics Technology

More information

DESIGN OF A NOVEL CURRENT MIRROR BASED DIFFERENTIAL AMPLIFIER DESIGN WITH LATCH NETWORK. Thota Keerthi* 1, Ch. Anil Kumar 2

DESIGN OF A NOVEL CURRENT MIRROR BASED DIFFERENTIAL AMPLIFIER DESIGN WITH LATCH NETWORK. Thota Keerthi* 1, Ch. Anil Kumar 2 ISSN 2277-2685 IJESR/October 2014/ Vol-4/Issue-10/682-687 Thota Keerthi et al./ International Journal of Engineering & Science Research DESIGN OF A NOVEL CURRENT MIRROR BASED DIFFERENTIAL AMPLIFIER DESIGN

More information

MXD7210GL/HL/ML/NL. Low Cost, Low Noise ±10 g Dual Axis Accelerometer with Digital Outputs

MXD7210GL/HL/ML/NL. Low Cost, Low Noise ±10 g Dual Axis Accelerometer with Digital Outputs FEATURES Low cost Resolution better than 1milli-g at 1Hz Dual axis accelerometer fabricated on a monolithic CMOS IC On chip mixed signal processing No moving parts; No loose particle issues >50,000 g shock

More information

RESISTOR-STRING digital-to analog converters (DACs)

RESISTOR-STRING digital-to analog converters (DACs) IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, VOL. 53, NO. 6, JUNE 2006 497 A Low-Power Inverted Ladder D/A Converter Yevgeny Perelman and Ran Ginosar Abstract Interpolating, dual resistor

More information

DIGITAL INTEGRATED CIRCUITS A DESIGN PERSPECTIVE 2 N D E D I T I O N

DIGITAL INTEGRATED CIRCUITS A DESIGN PERSPECTIVE 2 N D E D I T I O N DIGITAL INTEGRATED CIRCUITS A DESIGN PERSPECTIVE 2 N D E D I T I O N Jan M. Rabaey, Anantha Chandrakasan, and Borivoje Nikolic CONTENTS PART I: THE FABRICS Chapter 1: Introduction (32 pages) 1.1 A Historical

More information

Fractional- N PLL with 90 Phase Shift Lock and Active Switched- Capacitor Loop Filter

Fractional- N PLL with 90 Phase Shift Lock and Active Switched- Capacitor Loop Filter J. Park, F. Maloberti: "Fractional-N PLL with 90 Phase Shift Lock and Active Switched-Capacitor Loop Filter"; Proc. of the IEEE Custom Integrated Circuits Conference, CICC 2005, San Josè, 21 September

More information

MXD2125J/K. Ultra Low Cost, ±2.0 g Dual Axis Accelerometer with Digital Outputs

MXD2125J/K. Ultra Low Cost, ±2.0 g Dual Axis Accelerometer with Digital Outputs Ultra Low Cost, ±2.0 g Dual Axis Accelerometer with Digital Outputs MXD2125J/K FEATURES RoHS Compliant Dual axis accelerometer Monolithic CMOS construction On-chip mixed mode signal processing Resolution

More information

PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag

PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS. Dr. Mohammed M. Farag PHYSICAL STRUCTURE OF CMOS INTEGRATED CIRCUITS Dr. Mohammed M. Farag Outline Integrated Circuit Layers MOSFETs CMOS Layers Designing FET Arrays EE 432 VLSI Modeling and Design 2 Integrated Circuit Layers

More information

MEMS-FABRICATED ACCELEROMETERS WITH FEEDBACK COMPENSATION

MEMS-FABRICATED ACCELEROMETERS WITH FEEDBACK COMPENSATION MEMS-FABRICATED ACCELEROMETERS WITH FEEDBACK COMPENSATION Yonghwa Park*, Sangjun Park*, Byung-doo choi*, Hyoungho Ko*, Taeyong Song*, Geunwon Lim*, Kwangho Yoo*, **, Sangmin Lee*, Sang Chul Lee*, **, Ahra

More information

Course Outcome of M.Tech (VLSI Design)

Course Outcome of M.Tech (VLSI Design) Course Outcome of M.Tech (VLSI Design) PVL108: Device Physics and Technology The students are able to: 1. Understand the basic physics of semiconductor devices and the basics theory of PN junction. 2.

More information

Mechanical Spectrum Analyzer in Silicon using Micromachined Accelerometers with Time-Varying Electrostatic Feedback

Mechanical Spectrum Analyzer in Silicon using Micromachined Accelerometers with Time-Varying Electrostatic Feedback IMTC 2003 Instrumentation and Measurement Technology Conference Vail, CO, USA, 20-22 May 2003 Mechanical Spectrum Analyzer in Silicon using Micromachined Accelerometers with Time-Varying Electrostatic

More information

Single-Ended to Differential Converter for Multiple-Stage Single-Ended Ring Oscillators

Single-Ended to Differential Converter for Multiple-Stage Single-Ended Ring Oscillators IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO. 1, JANUARY 2003 141 Single-Ended to Differential Converter for Multiple-Stage Single-Ended Ring Oscillators Yuping Toh, Member, IEEE, and John A. McNeill,

More information

ISSN:

ISSN: 1391 DESIGN OF 9 BIT SAR ADC USING HIGH SPEED AND HIGH RESOLUTION OPEN LOOP CMOS COMPARATOR IN 180NM TECHNOLOGY WITH R-2R DAC TOPOLOGY AKHIL A 1, SUNIL JACOB 2 1 M.Tech Student, 2 Associate Professor,

More information

A Micropower Front-end Interface for Differential-Capacitive Sensor Systems

A Micropower Front-end Interface for Differential-Capacitive Sensor Systems A Micropower Front-end Interface for Differential-Capacitive Sensor Systems T.G. Constandinou, J. Georgiou and C. Toumazou Abstract: This letter presents a front-end circuit for interfacing to differential

More information

DESIGN & IMPLEMENTATION OF SELF TIME DUMMY REPLICA TECHNIQUE IN 128X128 LOW VOLTAGE SRAM

DESIGN & IMPLEMENTATION OF SELF TIME DUMMY REPLICA TECHNIQUE IN 128X128 LOW VOLTAGE SRAM DESIGN & IMPLEMENTATION OF SELF TIME DUMMY REPLICA TECHNIQUE IN 128X128 LOW VOLTAGE SRAM 1 Mitali Agarwal, 2 Taru Tevatia 1 Research Scholar, 2 Associate Professor 1 Department of Electronics & Communication

More information

Second-Order Sigma-Delta Modulator in Standard CMOS Technology

Second-Order Sigma-Delta Modulator in Standard CMOS Technology SERBIAN JOURNAL OF ELECTRICAL ENGINEERING Vol. 1, No. 3, November 2004, 37-44 Second-Order Sigma-Delta Modulator in Standard CMOS Technology Dragiša Milovanović 1, Milan Savić 1, Miljan Nikolić 1 Abstract:

More information

CHAPTER. delta-sigma modulators 1.0

CHAPTER. delta-sigma modulators 1.0 CHAPTER 1 CHAPTER Conventional delta-sigma modulators 1.0 This Chapter presents the traditional first- and second-order DSM. The main sources for non-ideal operation are described together with some commonly

More information

CHAPTER 6 PHASE LOCKED LOOP ARCHITECTURE FOR ADC

CHAPTER 6 PHASE LOCKED LOOP ARCHITECTURE FOR ADC 138 CHAPTER 6 PHASE LOCKED LOOP ARCHITECTURE FOR ADC 6.1 INTRODUCTION The Clock generator is a circuit that produces the timing or the clock signal for the operation in sequential circuits. The circuit

More information

A Multichannel Pipeline Analog-to-Digital Converter for an Integrated 3-D Ultrasound Imaging System

A Multichannel Pipeline Analog-to-Digital Converter for an Integrated 3-D Ultrasound Imaging System 1266 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 38, NO. 7, JULY 2003 A Multichannel Pipeline Analog-to-Digital Converter for an Integrated 3-D Ultrasound Imaging System Kambiz Kaviani, Student Member,

More information

A Low Power Small Area Multi-bit Quantizer with A Capacitor String in Sigma-Delta Modulator

A Low Power Small Area Multi-bit Quantizer with A Capacitor String in Sigma-Delta Modulator A Low Power Small Area Multi-bit uantizer with A Capacitor String in Sigma-Delta Modulator Xuia Wang, Jian Xu, and Xiaobo Wu Abstract An ultra-low power area-efficient fully differential multi-bit quantizer

More information

High Performance, Wide Bandwidth Accelerometer ADXL001

High Performance, Wide Bandwidth Accelerometer ADXL001 FEATURES High performance accelerometer ±7 g, ±2 g, and ± g wideband ranges available 22 khz resonant frequency structure High linearity:.2% of full scale Low noise: 4 mg/ Hz Sensitive axis in the plane

More information

OBSOLETE. High Performance, Wide Bandwidth Accelerometer ADXL001 FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM

OBSOLETE. High Performance, Wide Bandwidth Accelerometer ADXL001 FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM FEATURES High performance accelerometer ±7 g, ±2 g, and ± g wideband ranges available 22 khz resonant frequency structure High linearity:.2% of full scale Low noise: 4 mg/ Hz Sensitive axis in the plane

More information

DESIGN AND VERIFICATION OF ANALOG PHASE LOCKED LOOP CIRCUIT

DESIGN AND VERIFICATION OF ANALOG PHASE LOCKED LOOP CIRCUIT DESIGN AND VERIFICATION OF ANALOG PHASE LOCKED LOOP CIRCUIT PRADEEP G CHAGASHETTI Mr. H.V. RAVISH ARADHYA Department of E&C Department of E&C R.V.COLLEGE of ENGINEERING R.V.COLLEGE of ENGINEERING Bangalore

More information

High Temperature Mixed Signal Capabilities

High Temperature Mixed Signal Capabilities High Temperature Mixed Signal Capabilities June 29, 2017 Product Overview Features o Up to 300 o C Operation o Will support most analog functions. o Easily combined with up to 30K digital gates. o 1.0u

More information

Analog CMOS Interface Circuits for UMSI Chip of Environmental Monitoring Microsystem

Analog CMOS Interface Circuits for UMSI Chip of Environmental Monitoring Microsystem Analog CMOS Interface Circuits for UMSI Chip of Environmental Monitoring Microsystem A report Submitted to Canopus Systems Inc. Zuhail Sainudeen and Navid Yazdi Arizona State University July 2001 1. Overview

More information

IN RECENT years, low-dropout linear regulators (LDOs) are

IN RECENT years, low-dropout linear regulators (LDOs) are IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, VOL. 52, NO. 9, SEPTEMBER 2005 563 Design of Low-Power Analog Drivers Based on Slew-Rate Enhancement Circuits for CMOS Low-Dropout Regulators

More information

Power Efficient Digital LDO Regulator with Transient Response Boost Technique K.K.Sree Janani 1, M.Balasubramani 2

Power Efficient Digital LDO Regulator with Transient Response Boost Technique K.K.Sree Janani 1, M.Balasubramani 2 Power Efficient Digital LDO Regulator with Transient Response Boost Technique K.K.Sree Janani 1, M.Balasubramani 2 1 PG student, Department of ECE, Vivekanandha College of Engineering for Women. 2 Assistant

More information

noise, f s =1.0MHz, N= Integrator Output: Cs=100fF, Cf=100fF, 1nV rms Integrator Input referred Noise =20pF =2pF =0 PSD [db] PSD [db] C p1

noise, f s =1.0MHz, N= Integrator Output: Cs=100fF, Cf=100fF, 1nV rms Integrator Input referred Noise =20pF =2pF =0 PSD [db] PSD [db] C p1 IEEE Instrumentation and Measurement Technology Conference Budapest, Hungary, May {3, 00 A Noise-Shaping Accelerometer Interface Circuit for Two-Chip Implementation Tetsuya Kajita Research & Development

More information

Wafer-scale 3D integration of silicon-on-insulator RF amplifiers

Wafer-scale 3D integration of silicon-on-insulator RF amplifiers Wafer-scale integration of silicon-on-insulator RF amplifiers The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation As Published

More information

Disseny físic. Disseny en Standard Cells. Enric Pastor Rosa M. Badia Ramon Canal DM Tardor DM, Tardor

Disseny físic. Disseny en Standard Cells. Enric Pastor Rosa M. Badia Ramon Canal DM Tardor DM, Tardor Disseny físic Disseny en Standard Cells Enric Pastor Rosa M. Badia Ramon Canal DM Tardor 2005 DM, Tardor 2005 1 Design domains (Gajski) Structural Processor, memory ALU, registers Cell Device, gate Transistor

More information

On Chip Active Decoupling Capacitors for Supply Noise Reduction for Power Gating and Dynamic Dual Vdd Circuits in Digital VLSI

On Chip Active Decoupling Capacitors for Supply Noise Reduction for Power Gating and Dynamic Dual Vdd Circuits in Digital VLSI ELEN 689 606 Techniques for Layout Synthesis and Simulation in EDA Project Report On Chip Active Decoupling Capacitors for Supply Noise Reduction for Power Gating and Dynamic Dual Vdd Circuits in Digital

More information

CMOS High Speed A/D Converter Architectures

CMOS High Speed A/D Converter Architectures CHAPTER 3 CMOS High Speed A/D Converter Architectures 3.1 Introduction In the previous chapter, basic key functions are examined with special emphasis on the power dissipation associated with its implementation.

More information

A New Capacitive Sensing Circuit using Modified Charge Transfer Scheme

A New Capacitive Sensing Circuit using Modified Charge Transfer Scheme 78 Hyeopgoo eo : A NEW CAPACITIVE CIRCUIT USING MODIFIED CHARGE TRANSFER SCHEME A New Capacitive Sensing Circuit using Modified Charge Transfer Scheme Hyeopgoo eo, Member, KIMICS Abstract This paper proposes

More information

Module -18 Flip flops

Module -18 Flip flops 1 Module -18 Flip flops 1. Introduction 2. Comparison of latches and flip flops. 3. Clock the trigger signal 4. Flip flops 4.1. Level triggered flip flops SR, D and JK flip flops 4.2. Edge triggered flip

More information

DAT175: Topics in Electronic System Design

DAT175: Topics in Electronic System Design DAT175: Topics in Electronic System Design Analog Readout Circuitry for Hearing Aid in STM90nm 21 February 2010 Remzi Yagiz Mungan v1.10 1. Introduction In this project, the aim is to design an adjustable

More information

Novel Low-Overhead Operand Isolation Techniques for Low-Power Datapath Synthesis

Novel Low-Overhead Operand Isolation Techniques for Low-Power Datapath Synthesis Novel Low-Overhead Operand Isolation Techniques for Low-Power Datapath Synthesis N. Banerjee, A. Raychowdhury, S. Bhunia, H. Mahmoodi, and K. Roy School of Electrical and Computer Engineering, Purdue University,

More information

CHAPTER 3. Instrumentation Amplifier (IA) Background. 3.1 Introduction. 3.2 Instrumentation Amplifier Architecture and Configurations

CHAPTER 3. Instrumentation Amplifier (IA) Background. 3.1 Introduction. 3.2 Instrumentation Amplifier Architecture and Configurations CHAPTER 3 Instrumentation Amplifier (IA) Background 3.1 Introduction The IAs are key circuits in many sensor readout systems where, there is a need to amplify small differential signals in the presence

More information

Chapter 3 Novel Digital-to-Analog Converter with Gamma Correction for On-Panel Data Driver

Chapter 3 Novel Digital-to-Analog Converter with Gamma Correction for On-Panel Data Driver Chapter 3 Novel Digital-to-Analog Converter with Gamma Correction for On-Panel Data Driver 3.1 INTRODUCTION As last chapter description, we know that there is a nonlinearity relationship between luminance

More information

Wafer Level Vacuum Packaged Out-of-Plane and In-Plane Differential Resonant Silicon Accelerometers for Navigational Applications

Wafer Level Vacuum Packaged Out-of-Plane and In-Plane Differential Resonant Silicon Accelerometers for Navigational Applications 58 ILLHWAN KIM et al : WAFER LEVEL VACUUM PACKAGED OUT-OF-PLANE AND IN-PLANE DIFFERENTIAL RESONANT SILICON ACCELEROMETERS FOR NAVIGATIONAL APPLICATIONS Wafer Level Vacuum Packaged Out-of-Plane and In-Plane

More information

Lecture 9: Cell Design Issues

Lecture 9: Cell Design Issues Lecture 9: Cell Design Issues MAH, AEN EE271 Lecture 9 1 Overview Reading W&E 6.3 to 6.3.6 - FPGA, Gate Array, and Std Cell design W&E 5.3 - Cell design Introduction This lecture will look at some of the

More information

Low Power Design of Successive Approximation Registers

Low Power Design of Successive Approximation Registers Low Power Design of Successive Approximation Registers Rabeeh Majidi ECE Department, Worcester Polytechnic Institute, Worcester MA USA rabeehm@ece.wpi.edu Abstract: This paper presents low power design

More information

A New, Low-Cost, Sampled-Data, 10-Bit CMOS A/D Converter

A New, Low-Cost, Sampled-Data, 10-Bit CMOS A/D Converter A New, Low-Cost, Sampled-Data, 10-Bit CMOS A/D Converter IF IT S NOT LOW COST, IT S NOT CREATIVE Cost is the single most important factor in the success of any new product. The current emphasis on digital

More information

Very Large Scale Integration (VLSI)

Very Large Scale Integration (VLSI) Very Large Scale Integration (VLSI) Lecture 6 Dr. Ahmed H. Madian Ah_madian@hotmail.com Dr. Ahmed H. Madian-VLSI 1 Contents Array subsystems Gate arrays technology Sea-of-gates Standard cell Macrocell

More information

Low Power and Fast Transient High Swing CMOS Telescopic Operational Amplifier

Low Power and Fast Transient High Swing CMOS Telescopic Operational Amplifier RESEARCH ARTICLE OPEN ACCESS Low Power and Fast Transient High Swing CMOS Telescopic Operational Amplifier Akshay Kumar Kansal 1, Asst Prof. Gayatri Sakya 2 Electronics and Communication Department, 1,2

More information

Lecture 12 Memory Circuits. Memory Architecture: Decoders. Semiconductor Memory Classification. Array-Structured Memory Architecture RWM NVRWM ROM

Lecture 12 Memory Circuits. Memory Architecture: Decoders. Semiconductor Memory Classification. Array-Structured Memory Architecture RWM NVRWM ROM Semiconductor Memory Classification Lecture 12 Memory Circuits RWM NVRWM ROM Peter Cheung Department of Electrical & Electronic Engineering Imperial College London Reading: Weste Ch 8.3.1-8.3.2, Rabaey

More information

A 2.2GHZ-2.9V CHARGE PUMP PHASE LOCKED LOOP DESIGN AND ANALYSIS

A 2.2GHZ-2.9V CHARGE PUMP PHASE LOCKED LOOP DESIGN AND ANALYSIS A 2.2GHZ-2.9V CHARGE PUMP PHASE LOCKED LOOP DESIGN AND ANALYSIS Diary R. Sulaiman e-mail: diariy@gmail.com Salahaddin University, Engineering College, Electrical Engineering Department Erbil, Iraq Key

More information

Design of an Efficient Phase Frequency Detector for a Digital Phase Locked Loop

Design of an Efficient Phase Frequency Detector for a Digital Phase Locked Loop Design of an Efficient Phase Frequency Detector for a Digital Phase Locked Loop Shaik. Yezazul Nishath School Of Electronics Engineering (SENSE) VIT University Chennai, India Abstract This paper outlines

More information

A Digital Readout IC with Digital Offset Canceller for Capacitive Sensors

A Digital Readout IC with Digital Offset Canceller for Capacitive Sensors http://dx.doi.org/10.5573/jsts.2012.12.3.278 JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, VOL.12, NO.3, SEPTEMBER, 2012 A Digital Readout IC with Digital Offset Canceller for Capacitive Sensors Dong-Hyuk

More information

EE584 Introduction to VLSI Design Final Project Document Group 9 Ring Oscillator with Frequency selector

EE584 Introduction to VLSI Design Final Project Document Group 9 Ring Oscillator with Frequency selector EE584 Introduction to VLSI Design Final Project Document Group 9 Ring Oscillator with Frequency selector Group Members Uttam Kumar Boda Rajesh Tenukuntla Mohammad M Iftakhar Srikanth Yanamanagandla 1 Table

More information

A Low Power Switching Power Supply for Self-Clocked Systems 1. Gu-Yeon Wei and Mark Horowitz

A Low Power Switching Power Supply for Self-Clocked Systems 1. Gu-Yeon Wei and Mark Horowitz A Low Power Switching Power Supply for Self-Clocked Systems 1 Gu-Yeon Wei and Mark Horowitz Computer Systems Laboratory, Stanford University, CA 94305 Abstract - This paper presents a digital power supply

More information

Silicon on Insulator (SOI) Spring 2018 EE 532 Tao Chen

Silicon on Insulator (SOI) Spring 2018 EE 532 Tao Chen Silicon on Insulator (SOI) Spring 2018 EE 532 Tao Chen What is Silicon on Insulator (SOI)? SOI silicon on insulator, refers to placing a thin layer of silicon on top of an insulator such as SiO2. The devices

More information

Study of High Speed Buffer Amplifier using Microwind

Study of High Speed Buffer Amplifier using Microwind Study of High Speed Buffer Amplifier using Microwind Amrita Shukla M Tech Scholar NIIST Bhopal, India Puran Gaur HOD, NIIST Bhopal India Braj Bihari Soni Asst. Prof. NIIST Bhopal India ABSTRACT This paper

More information

Analysis of 1=f Noise in CMOS Preamplifier With CDS Circuit

Analysis of 1=f Noise in CMOS Preamplifier With CDS Circuit IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 49, NO. 4, AUGUST 2002 1819 Analysis of 1=f Noise in CMOS Preamplifier With CDS Circuit Tae-Hoon Lee, Gyuseong Cho, Hee Joon Kim, Seung Wook Lee, Wanno Lee, and

More information

MICROMACHINED PRECISION INERTIAL INSTRUMENTS

MICROMACHINED PRECISION INERTIAL INSTRUMENTS AFRL-IF-RS-TR-2003-276 Final Technical Report November 2003 MICROMACHINED PRECISION INERTIAL INSTRUMENTS University of Michigan APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. AIR FORCE RESEARCH LABORATORY

More information

Lecture 11: Clocking

Lecture 11: Clocking High Speed CMOS VLSI Design Lecture 11: Clocking (c) 1997 David Harris 1.0 Introduction We have seen that generating and distributing clocks with little skew is essential to high speed circuit design.

More information

A 10Gbps Analog Adaptive Equalizer and Pulse Shaping Circuit for Backplane Interface

A 10Gbps Analog Adaptive Equalizer and Pulse Shaping Circuit for Backplane Interface Proceedings of the 5th WSEAS Int. Conf. on CIRCUITS, SYSTEMS, ELECTRONICS, CONTROL & SIGNAL PROCESSING, Dallas, USA, November 1-3, 2006 225 A 10Gbps Analog Adaptive Equalizer and Pulse Shaping Circuit

More information

EE C245 ME C218 Introduction to MEMS Design Fall 2010

EE C245 ME C218 Introduction to MEMS Design Fall 2010 Instructor: Prof. Clark T.-C. Nguyen EE C245 ME C218 Introduction to MEMS Design Fall 2010 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley

More information

RECENT technology trends have lead to an increase in

RECENT technology trends have lead to an increase in IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 39, NO. 9, SEPTEMBER 2004 1581 Noise Analysis Methodology for Partially Depleted SOI Circuits Mini Nanua and David Blaauw Abstract In partially depleted silicon-on-insulator

More information

Sticks Diagram & Layout. Part II

Sticks Diagram & Layout. Part II Sticks Diagram & Layout Part II Well and Substrate Taps Substrate must be tied to GND and n-well to V DD Metal to lightly-doped semiconductor forms poor connection called Shottky Diode Use heavily doped

More information

Memory Basics. historically defined as memory array with individual bit access refers to memory with both Read and Write capabilities

Memory Basics. historically defined as memory array with individual bit access refers to memory with both Read and Write capabilities Memory Basics RAM: Random Access Memory historically defined as memory array with individual bit access refers to memory with both Read and Write capabilities ROM: Read Only Memory no capabilities for

More information

Design of Low Power High Speed Fully Dynamic CMOS Latched Comparator

Design of Low Power High Speed Fully Dynamic CMOS Latched Comparator International Journal of Engineering Research and Development e-issn: 2278-067X, p-issn: 2278-800X, www.ijerd.com Volume 10, Issue 4 (April 2014), PP.01-06 Design of Low Power High Speed Fully Dynamic

More information

/$ IEEE

/$ IEEE IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, VOL. 53, NO. 11, NOVEMBER 2006 1205 A Low-Phase Noise, Anti-Harmonic Programmable DLL Frequency Multiplier With Period Error Compensation for

More information

A 24 V Chopper Offset-Stabilized Operational Amplifier with Symmetrical RC Notch Filters having sub-10 µv offset and over-120db CMRR

A 24 V Chopper Offset-Stabilized Operational Amplifier with Symmetrical RC Notch Filters having sub-10 µv offset and over-120db CMRR ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY Volume 20, Number 4, 2017, 301 312 A 24 V Chopper Offset-Stabilized Operational Amplifier with Symmetrical RC Notch Filters having sub-10 µv offset

More information

UNIT-II LOW POWER VLSI DESIGN APPROACHES

UNIT-II LOW POWER VLSI DESIGN APPROACHES UNIT-II LOW POWER VLSI DESIGN APPROACHES Low power Design through Voltage Scaling: The switching power dissipation in CMOS digital integrated circuits is a strong function of the power supply voltage.

More information

OBSOLETE. High Accuracy 1 g to 5 g Single Axis imems Accelerometer with Analog Input ADXL105*

OBSOLETE. High Accuracy 1 g to 5 g Single Axis imems Accelerometer with Analog Input ADXL105* a FEATURES Monolithic IC Chip mg Resolution khz Bandwidth Flat Amplitude Response ( %) to khz Low Bias and Sensitivity Drift Low Power ma Output Ratiometric to Supply User Scalable g Range On-Board Temperature

More information

High Accuracy 1 g to 5 g Single Axis imems Accelerometer with Analog Input ADXL105*

High Accuracy 1 g to 5 g Single Axis imems Accelerometer with Analog Input ADXL105* a FEATURES Monolithic IC Chip mg Resolution khz Bandwidth Flat Amplitude Response ( %) to khz Low Bias and Sensitivity Drift Low Power ma Output Ratiometric to Supply User Scalable g Range On-Board Temperature

More information

José Gerardo Vieira da Rocha Nuno Filipe da Silva Ramos. Small Size Σ Analog to Digital Converter for X-rays imaging Aplications

José Gerardo Vieira da Rocha Nuno Filipe da Silva Ramos. Small Size Σ Analog to Digital Converter for X-rays imaging Aplications José Gerardo Vieira da Rocha Nuno Filipe da Silva Ramos Small Size Σ Analog to Digital Converter for X-rays imaging Aplications University of Minho Department of Industrial Electronics This report describes

More information

A CMOS Phase Locked Loop based PWM Generator using 90nm Technology Rajeev Pankaj Nelapati 1 B.K.Arun Teja 2 K.Sai Ravi Teja 3

A CMOS Phase Locked Loop based PWM Generator using 90nm Technology Rajeev Pankaj Nelapati 1 B.K.Arun Teja 2 K.Sai Ravi Teja 3 IJSRD - International Journal for Scientific Research & Development Vol. 3, Issue 06, 2015 ISSN (online): 2321-0613 A CMOS Phase Locked Loop based PWM Generator using 90nm Technology Rajeev Pankaj Nelapati

More information

High Voltage Operational Amplifiers in SOI Technology

High Voltage Operational Amplifiers in SOI Technology High Voltage Operational Amplifiers in SOI Technology Kishore Penmetsa, Kenneth V. Noren, Herbert L. Hess and Kevin M. Buck Department of Electrical Engineering, University of Idaho Abstract This paper

More information

Design of Pipeline Analog to Digital Converter

Design of Pipeline Analog to Digital Converter Design of Pipeline Analog to Digital Converter Vivek Tripathi, Chandrajit Debnath, Rakesh Malik STMicroelectronics The pipeline analog-to-digital converter (ADC) architecture is the most popular topology

More information

Smart Vision Chip Fabricated Using Three Dimensional Integration Technology

Smart Vision Chip Fabricated Using Three Dimensional Integration Technology Smart Vision Chip Fabricated Using Three Dimensional Integration Technology H.Kurino, M.Nakagawa, K.W.Lee, T.Nakamura, Y.Yamada, K.T.Park and M.Koyanagi Dept. of Machine Intelligence and Systems Engineering,

More information

Micro-nanosystems for electrical metrology and precision instrumentation

Micro-nanosystems for electrical metrology and precision instrumentation Micro-nanosystems for electrical metrology and precision instrumentation A. Bounouh 1, F. Blard 1,2, H. Camon 2, D. Bélières 1, F. Ziadé 1 1 LNE 29 avenue Roger Hennequin, 78197 Trappes, France, alexandre.bounouh@lne.fr

More information

FDTD SPICE Analysis of High-Speed Cells in Silicon Integrated Circuits

FDTD SPICE Analysis of High-Speed Cells in Silicon Integrated Circuits FDTD Analysis of High-Speed Cells in Silicon Integrated Circuits Neven Orhanovic and Norio Matsui Applied Simulation Technology Gateway Place, Suite 8 San Jose, CA 9 {neven, matsui}@apsimtech.com Abstract

More information

A Chopper Modulated Instrumentation Amplifier Using Spike Shaping and Delayed Modulation Techniques for MEMS Pressure Sensor

A Chopper Modulated Instrumentation Amplifier Using Spike Shaping and Delayed Modulation Techniques for MEMS Pressure Sensor N. P. Futane, C. Roychaudhuri and H. Saha Vol. 2, 155 A Chopper Modulated Instrumentation Amplifier Using Spike Shaping and Delayed Modulation Techniques for MEMS Pressure Sensor Abstract A low-noise chopper

More information

Last Name Girosco Given Name Pio ID Number

Last Name Girosco Given Name Pio ID Number Last Name Girosco Given Name Pio ID Number 0170130 Question n. 1 Which is the typical range of frequencies at which MEMS gyroscopes (as studied during the course) operate, and why? In case of mode-split

More information

Low Cost 100 g Single Axis Accelerometer with Analog Output ADXL190*

Low Cost 100 g Single Axis Accelerometer with Analog Output ADXL190* a FEATURES imems Single Chip IC Accelerometer 40 Milli-g Resolution Low Power ma 400 Hz Bandwidth +5.0 V Single Supply Operation 000 g Shock Survival APPLICATIONS Shock and Vibration Measurement Machine

More information

Fan in: The number of inputs of a logic gate can handle.

Fan in: The number of inputs of a logic gate can handle. Subject Code: 17333 Model Answer Page 1/ 29 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model

More information

INTEGRATED CIRCUITS. AN109 Microprocessor-compatible DACs Dec

INTEGRATED CIRCUITS. AN109 Microprocessor-compatible DACs Dec INTEGRATED CIRCUITS 1988 Dec DAC products are designed to convert a digital code to an analog signal. Since a common source of digital signals is the data bus of a microprocessor, DAC circuits that are

More information

R.B.V.R.R. WOMEN S COLLEGE (AUTONOMOUS) Narayanaguda, Hyderabad. ELECTRONIC PRINCIPLES AND APPLICATIONS

R.B.V.R.R. WOMEN S COLLEGE (AUTONOMOUS) Narayanaguda, Hyderabad. ELECTRONIC PRINCIPLES AND APPLICATIONS R.B.V.R.R. WOMEN S COLLEGE (AUTONOMOUS) Narayanaguda, Hyderabad. DEPARTMENT OF PHYSICS QUESTION BANK FOR SEMESTER V PHYSICS PAPER VI (A) ELECTRONIC PRINCIPLES AND APPLICATIONS UNIT I: SEMICONDUCTOR DEVICES

More information

Dual-Axis, High-g, imems Accelerometers ADXL278

Dual-Axis, High-g, imems Accelerometers ADXL278 FEATURES Complete dual-axis acceleration measurement system on a single monolithic IC Available in ±35 g/±35 g, ±50 g/±50 g, or ±70 g/±35 g output full-scale ranges Full differential sensor and circuitry

More information

3 rd order Sigma-delta modulator with delayed feed-forward path for low-power applications

3 rd order Sigma-delta modulator with delayed feed-forward path for low-power applications 3 rd order Sigma-delta modulator with delayed feed-forward path for low-power applications Min-woong Lee, Seong-ik Cho Electronic Engineering Chonbuk National University 567 Baekje-daero, deokjin-gu, Jeonju-si,

More information

Tactical grade MEMS accelerometer

Tactical grade MEMS accelerometer Tactical grade MEMS accelerometer S.Gonseth 1, R.Brisson 1, D Balmain 1, M. Di-Gisi 1 1 SAFRAN COLIBRYS SA Av. des Sciences 13 1400 Yverdons-les-Bains Switzerland Inertial Sensors and Systems 2017 Karlsruhe,

More information

AN increasing number of video and communication applications

AN increasing number of video and communication applications 1470 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 32, NO. 9, SEPTEMBER 1997 A Low-Power, High-Speed, Current-Feedback Op-Amp with a Novel Class AB High Current Output Stage Jim Bales Abstract A complementary

More information

DESIGN OF MULTIPLYING DELAY LOCKED LOOP FOR DIFFERENT MULTIPLYING FACTORS

DESIGN OF MULTIPLYING DELAY LOCKED LOOP FOR DIFFERENT MULTIPLYING FACTORS DESIGN OF MULTIPLYING DELAY LOCKED LOOP FOR DIFFERENT MULTIPLYING FACTORS Aman Chaudhary, Md. Imtiyaz Chowdhary, Rajib Kar Department of Electronics and Communication Engg. National Institute of Technology,

More information

Digital Pulse-Frequency/Pulse-Amplitude Modulator for Improving Efficiency of SMPS Operating Under Light Loads

Digital Pulse-Frequency/Pulse-Amplitude Modulator for Improving Efficiency of SMPS Operating Under Light Loads 006 IEEE COMPEL Workshop, Rensselaer Polytechnic Institute, Troy, NY, USA, July 6-9, 006 Digital Pulse-Frequency/Pulse-Amplitude Modulator for Improving Efficiency of SMPS Operating Under Light Loads Nabeel

More information