Lecture 10: Accelerometers (Part I)

Size: px
Start display at page:

Download "Lecture 10: Accelerometers (Part I)"

Transcription

1 Lecture 0: Accelerometers (Part I) ADXL 50 (Formerly the original ADXL 50) ENE 5400, Spring 2004 Outline Performance analysis Capacitive sensing Circuit architectures Circuit techniques for non-ideality cancellation Feedback linearization Sigma-delta modulation Accelerometer Examples CMOS-integrated polysilicon-micromachined accelerometer (Fedder, UC Berkeley) CMOS-micromachined chopper-stabilized capacitive accelerometer (Wu, Carnegie Mellon) ENE 5400, Spring

2 Why Do Analog Devices Do This? Over 40,000,000 car produced worldwide annually The old technology was bulky and expensive (~$00 /car) MEMS accelerometers more reliable, smaller, and less expensive (~$5 /car) ENE 5400, Spring Accelerometer Specifications Accelerometer parameters Sensitivity Transducer sensitivity Bias (offset) Temperature drift of sensitivity Temperature drift of bias offset Noise Cross-axis sensitivity Acceleration limit Bandwidth Shock resistance Supply voltage Units V/g V/g/V mg % / K µg / K µg / Hz /2 % g Hz g V ENE 5400, Spring

3 Accelerometer Mechanical sensing element Static: Dynamic: x = m k total a in a = ω substrate in 2 n a in mx&& ( t) + b x& ( t) + k x( t) ma ( t) total total = in ENE 5400, Spring Capacitive Accelerometer Induced displacement is often capacitively sensed using comb fingers (yet the motion in the parallel-plate fashion) How to do interconnects (fabrication issue) affects the sensing circuit architecture MASS ENE 5400, Spring

4 Accelerometer Frequency Response Operating frequency is much lower than ω n The quality factor will affect Brownian Noise Transient response (Ringing) X ( s) = ain( s) s 2 ωn + s + ω Q 2 n ENE 5400, Spring Brownian Noise Brownian noise force and noise acceleration F ( f ) = n 4k Tb 4kbTω n an( f ) = mq b ENE 5400, Spring

5 Sensing Range vs. Noise Floor Large-ω n accelerometers can have large sensing range, yet with higher Brownian noise floor x m k total a = ω = a Case : x = khz and 50g in Case 2: x =.2 khz and 50g in 2 n a ( f ) = n 4kbTω n mq ENE 5400, Spring Spring Design Folded-beam spring design Should ensure large spring constant in the nonsensing axis x (sensing) y z ENE 5400, Spring

6 Capacitive Sensing ENE 5400, Spring 2004 Capacitive Sensing Standard steps: Modulation Amplification Demodulation Low-pass filtering Circuit architectures: Continuous-time voltage sensing Continuous-time current sensing Switched-capacitor circuit» Demodulation not needed V m, frequency f m -V m ENE 5400, Spring C demodulator sp C sn Pre-amplifier Low-Pass Filter Carrier, frequency f m 6

7 Simulation V m, frequency f m a in a in C sp V mod C sn LPF -V m f m + s / ω p V o V mod LPF removes the 2x carrier-frequency signal; induced phase lag depends on the pole of the LPF ENE 5400, Spring V o t (s) Modulation Required because capacitance can t be sensed at DC At the same time can avoid the /f noise at the low frequencies How is the modulation frequency related to the circuit and the fabrication technology? Z = / (2πfC); ~6 MΩ for f = 00 khz and C = 00 ff. Therefore the sensing circuit must have comparably high input impedance to avoid substantial signal attenuation» CMOS is a good candidate than bipolar junction transistors (BJT); however its /f noise is worse than BJT ENE 5400, Spring

8 Example: Analog Multiplier (the Gilbert Cell) R L R L Can perform modulation and demodulation Think about sinω t*sinω 2 t Can provide a gain larger than one V is the carrier, and V 2 is the modulated signal from sensor Think of that Q3, Q4, Q5, and Q6 as switches that alternatively turn on to pass bias current (e.g. when Q3 and Q6 are on, then Q4 and Q5 are off, and vice versa) _ V out + ENE 5400, Spring Reference: Gray and Meyer, Analysis and design of analog integrated circuits Cont d R L Vout R L R L Vout R L i c3 i c6 i c4 i c5 Q Q2 Q Q2 V 2 V 2 I EE I EE st ½ cycle: Q3 and Q6 on ENE 5400, Spring nd ½ cycle: Q4 and Q5 on 8

9 Capacitive Position Sensing x C sp C sn V mp x o V sense -V mn For small-displacement parallel-plate capacitors (x << x o ) : 2Cs x Vsense = Vm C 2C + C x s = ε oa/ x s p 0 o ENE 5400, Spring Fully-Differential Capacitive Sensing Doubled sensitivity than differential sensing Improves the interference rejection with higher common-mode rejection ratio (CMRR) and power supply rejection ratio (PSRR) V sense = V sensep V sensen 4Cs = 2C + C ENE 5400, Spring s p x x o V m Routing shown is on a CMOS-MEMS accelerometer 9

10 Sensitivity What would you do to increase sensitivity? Can the amplitude of the modulation voltage be arbitrary large? V a sense in = 4Cs 2C + C s p V x m o ω 2 n ENE 5400, Spring Spring-Softening Effect Reduces resonant frequency and possible destabilization if the electrical spring k e completely negates the mechanical spring constant V m (stator) C sp C sn V s (rotor) -V m (stator) ENE 5400, Spring

11 Performance Comparison A better design achieves lower noise floor at the same capacitive sensitivity 0000 [Zhang,99] Si bulk [Luo,00] [Lu,95] 000 Poly thin-film CMOS MEMS [ADXL05] 00 [Lemkin,97] Noise Floor (ug/rthz) 0 This [Wu, work 2002] [Bernstein,99] [Yazdi,99] [Smith,94] ENE 5400, Spring Capacitance Sensitivity (ff/g) Capacitive Sensing Circuits ENE 5400, Spring

12 Continuous-Time Voltage Sensing Use ac modulation voltage; general topologies include: Capacitive feedback» An a.c. virtual ground is provided so it is parasiticinsensitive Open-loop» Not parasitic-insensitive V m C f V m C sp _ C sp C sn + R b C sn R b -V m ENE 5400, Spring V m Continuous-Time Voltage Sensing In CMOS, the requires dc bias at the high-impedance sensing node can be realized by: A large resistor (large occupied area) A reversed-biased diode (leakage would shift the dc bias) A MOS transistor operated in the sub-threshold region A turned-off MOS switch A reset MOS transistor ENE 5400, Spring

13 Continuous-Time Current Sensing Processes the a.c. current Provides a virtual ground and robust d.c. biasing Essentially uses a differentiator which has high-pass frequency response noise amplification Not an attractive choice V m R f C sp _ C sn + -V m ENE 5400, Spring Switch-Capacitor Sensing Circuits It is a natural approach to transfer the accumulated charge on a sensing capacitor to a sensed voltage output DO NOT need ac modulation voltage; the continuous switching action would set the dc bias at the high-impedance capacitive node The switching action also produces a pulsed output, which after a holding and a LPF circuits, becomes the smoothed baseband sensed signal No demodulation required Operate as discrete-time signal processors; analyzed by the z- transform technique ENE 5400, Spring

14 Equivalent Resistor using a Switched Capacitor Compare the transferred charges within T: V φ φ 2 V 2 R Q = (V V 2 ) T/R Q = C(V V 2 ) R = T C ENE 5400, Spring V S S 2 S and S 2 close and open on alternate phases: ( cycle = T) () φ on: C charges to V. Q = CV (2) φ 2 on: C discharges to V 2. Q = C(V V 2 ) (3)Next φ on Example: 6 MΩ resistor simulated with pf capacitor, T = 60 µs; easily achieved with modern CMOS C V 2 Discretization Issues Current in SC circuit flows in pulses The lower the clock period, the better approximation to the true, continuous current profile i(t) v(t)/r T 2 T 3 T t ENE 5400, Spring

15 Timing Issue The two clock phases should not overlap during on and off T φ Non-overlap φ 2 φ φ 2 V S S 2 V 2 C ENE 5400, Spring A Simple SC Integrator Replace R with a switched capacitor: V i φ φ 2 S S 2 C _ + C 2 V o If parasitic capacitances are not considered, the discrete-time transfer function is: (notice there is a half-cycle delay, see why?) H C z ( z) = C2 z delay ENE 5400, Spring

16 A Simple SC Integrator However that integrator is parasitic-sensitive C p3 φ φ 2 C 2 Cp4 V i S S 2 _ C p C + V o C p2 metal poly C C p poly2c p2 H C + C p ( z) = ( ) C2 z z silicon ENE 5400, Spring Parasitic-Insensitive SC Integrator Parasitic capacitances at C are made insensitive because they are all discharged to ground after the φ 2 clock No delay in the integrator; V i directly charges C and through C 2 to change V o C H( z) = C z 2 V i φ φ C C 2 _ φ 2 φ 2 + V o ENE 5400, Spring

17 Switched-Capacitor Sensing Circuit φ φ φ 2 V s φ C (x) _ C 2 φ 2 + Vo φ on, charge C ; Q = C V s φ 2 on, Q is transferred to C 2 until the virtual ground is reached C Vo = V s (actual gain depends on the duty cycle) C2 Provide robust DC biasing without having to use specific bias scheme ENE 5400, Spring Cont d: V o with a Sinusoidal Change on C (x) After holding and LPF V o (t) Pulsed output t ENE 5400, Spring

18 Non-ideality Cancellation ENE 5400, Spring Circuit and Sensor Offsets The CMOS circuits have offset on the order of - 0 mv (@ d.c.) Worse for minimum-length devices in differential amplifiers Saturation can easily occur if a signal amplification of 00 to 000 is required Mismatch of sensing capacitances (a position offset) results in a signal at the modulation frequency, and thus a dc offset after demodulation circuit offset sensor offset circuit noise sensed signal (weak) 0 f m ENE 5400, Spring Brownian noise f (Hz) 8

19 Circuit Offset Methods of d.c. offset cancellation ac-coupling capacitance dc feedback Chopper stabilization (CHS) Correlated Double Sampling (CDS) /f noise can be reduced by CHS and CDS V in V o a.c. coupling ENE 5400, Spring DC Feedback for Offset Cancellation Uses a low-pass filter in the feedback loop to realize a high-pass frequency response A offset reduction of ( + A 2 ); V o = A V off /(+A 2 ) V off A + _ V o F(s) A 2 + s / ω p ENE 5400, Spring

20 Cont d V off A V + _ E V o F(s) A 2 + s / ω p ENE 5400, Spring Chopper Stabilization Introduced about 50 years ago to realizing high precision d.c. gains with ac-coupled amplifiers Chopper originates from the use of mechanical choppers; now can be integrated on-chip by electronic switches A modulation technique to reduce d.c. offset and /f noise Key: the signal is modulated, amplified, and demodulated back to the base band, while the offset and noise is only modulated once to high frequencies V in + A v V out V carrier ENE 5400, Spring V noise + V offset V carrier 20

21 Example of a Fully Differential CHS Capacitive Readout Circuit (low-pass filtering) V refp and V refn are stable d.c. voltage sources; the alternating switching actions (choppers) are similar to using two modulating ac voltage sources with opposite phases (why doing this?) Demodulation is realized by alternating switching actions ENE 5400, Spring Correlated Double Sampling Reduces circuit offset and /f noise; usually applied in the SC circuits Requires two phases (φ, φ 2 ) in a sampling period to sample and subtract the offset V in φ φ 2 C C 2 A _ + + _ Voff φ φ φ 2 V out φ φ 2 T T T T 2T 2T 3T 3T ENE 5400, Spring

22 Correlated Double Sampling φ is on: V A = T q( nt ) = 2 T q2( nt ) = 2 V in + C 2 C + A _ + _ + V off V out φ 2 is on: V A = q ( nt ) = q ( nt ) = 2 C 2 C + + _ A _ + _ + V off _ V out ENE 5400, Spring Correlated Double Sampling Charge conservation at node A: The output is delayed by T / 2 without the offset voltage ENE 5400, Spring

Single-Axis, High-g, imems Accelerometers ADXL193

Single-Axis, High-g, imems Accelerometers ADXL193 Single-Axis, High-g, imems Accelerometers ADXL193 FEATURES Complete acceleration measurement system on a single monolithic IC Available in ±120 g or ±250 g output full-scale ranges Full differential sensor

More information

ISSCC 2006 / SESSION 16 / MEMS AND SENSORS / 16.1

ISSCC 2006 / SESSION 16 / MEMS AND SENSORS / 16.1 16.1 A 4.5mW Closed-Loop Σ Micro-Gravity CMOS-SOI Accelerometer Babak Vakili Amini, Reza Abdolvand, Farrokh Ayazi Georgia Institute of Technology, Atlanta, GA Recently, there has been an increasing demand

More information

Dual-Axis, High-g, imems Accelerometers ADXL278

Dual-Axis, High-g, imems Accelerometers ADXL278 FEATURES Complete dual-axis acceleration measurement system on a single monolithic IC Available in ±35 g/±35 g, ±50 g/±50 g, or ±70 g/±35 g output full-scale ranges Full differential sensor and circuitry

More information

Capacitive Sensing Project. Design of A Fully Differential Capacitive Sensing Circuit for MEMS Accelerometers. Matan Nurick Radai Rosenblat

Capacitive Sensing Project. Design of A Fully Differential Capacitive Sensing Circuit for MEMS Accelerometers. Matan Nurick Radai Rosenblat Capacitive Sensing Project Design of A Fully Differential Capacitive Sensing Circuit for MEMS Accelerometers Matan Nurick Radai Rosenblat Supervisor: Dr. Claudio Jacobson VLSI Laboratory, Technion, Israel,

More information

Single-Axis, High-g, imems Accelerometers ADXL78

Single-Axis, High-g, imems Accelerometers ADXL78 Single-Axis, High-g, imems Accelerometers ADXL78 FEATURES Complete acceleration measurement system on a single monolithic IC Available in ±35 g, ±50 g, or ±70 g output full-scale ranges Full differential

More information

OBSOLETE. High Performance, Wide Bandwidth Accelerometer ADXL001 FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM

OBSOLETE. High Performance, Wide Bandwidth Accelerometer ADXL001 FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM FEATURES High performance accelerometer ±7 g, ±2 g, and ± g wideband ranges available 22 khz resonant frequency structure High linearity:.2% of full scale Low noise: 4 mg/ Hz Sensitive axis in the plane

More information

High Performance, Wide Bandwidth Accelerometer ADXL001

High Performance, Wide Bandwidth Accelerometer ADXL001 FEATURES High performance accelerometer ±7 g, ±2 g, and ± g wideband ranges available 22 khz resonant frequency structure High linearity:.2% of full scale Low noise: 4 mg/ Hz Sensitive axis in the plane

More information

INF4420 Switched capacitor circuits Outline

INF4420 Switched capacitor circuits Outline INF4420 Switched capacitor circuits Spring 2012 1 / 54 Outline Switched capacitor introduction MOSFET as an analog switch z-transform Switched capacitor integrators 2 / 54 Introduction Discrete time analog

More information

Interface Electronic Circuits

Interface Electronic Circuits Lecture (5) Interface Electronic Circuits Part: 1 Prof. Kasim M. Al-Aubidy Philadelphia University-Jordan AMSS-MSc Prof. Kasim Al-Aubidy 1 Interface Circuits: An interface circuit is a signal conditioning

More information

INF4420. Switched capacitor circuits. Spring Jørgen Andreas Michaelsen

INF4420. Switched capacitor circuits. Spring Jørgen Andreas Michaelsen INF4420 Switched capacitor circuits Spring 2012 Jørgen Andreas Michaelsen (jorgenam@ifi.uio.no) Outline Switched capacitor introduction MOSFET as an analog switch z-transform Switched capacitor integrators

More information

Analog CMOS Interface Circuits for UMSI Chip of Environmental Monitoring Microsystem

Analog CMOS Interface Circuits for UMSI Chip of Environmental Monitoring Microsystem Analog CMOS Interface Circuits for UMSI Chip of Environmental Monitoring Microsystem A report Submitted to Canopus Systems Inc. Zuhail Sainudeen and Navid Yazdi Arizona State University July 2001 1. Overview

More information

OBSOLETE. High Accuracy 1 g to 5 g Single Axis imems Accelerometer with Analog Input ADXL105*

OBSOLETE. High Accuracy 1 g to 5 g Single Axis imems Accelerometer with Analog Input ADXL105* a FEATURES Monolithic IC Chip mg Resolution khz Bandwidth Flat Amplitude Response ( %) to khz Low Bias and Sensitivity Drift Low Power ma Output Ratiometric to Supply User Scalable g Range On-Board Temperature

More information

High Accuracy 1 g to 5 g Single Axis imems Accelerometer with Analog Input ADXL105*

High Accuracy 1 g to 5 g Single Axis imems Accelerometer with Analog Input ADXL105* a FEATURES Monolithic IC Chip mg Resolution khz Bandwidth Flat Amplitude Response ( %) to khz Low Bias and Sensitivity Drift Low Power ma Output Ratiometric to Supply User Scalable g Range On-Board Temperature

More information

DUAL ULTRA MICROPOWER RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER

DUAL ULTRA MICROPOWER RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC. ALD276A/ALD276B ALD276 DUAL ULTRA MICROPOWER RAILTORAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION The ALD276 is a dual monolithic CMOS micropower high slewrate operational

More information

Semiconductor Detector Systems

Semiconductor Detector Systems Semiconductor Detector Systems Helmuth Spieler Physics Division, Lawrence Berkeley National Laboratory OXFORD UNIVERSITY PRESS ix CONTENTS 1 Detector systems overview 1 1.1 Sensor 2 1.2 Preamplifier 3

More information

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI 1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward

More information

High Performance, Wide Bandwidth Accelerometer ADXL001

High Performance, Wide Bandwidth Accelerometer ADXL001 FEATURES High performance accelerometer ±7 g, ±2 g, and ± g wideband ranges available 22 khz resonant frequency structure High linearity:.2% of full scale Low noise: 4 mg/ Hz Sensitive axis in the plane

More information

Lecture 20: Passive Mixers

Lecture 20: Passive Mixers EECS 142 Lecture 20: Passive Mixers Prof. Ali M. Niknejad University of California, Berkeley Copyright c 2005 by Ali M. Niknejad A. M. Niknejad University of California, Berkeley EECS 142 Lecture 20 p.

More information

TWO AND ONE STAGES OTA

TWO AND ONE STAGES OTA TWO AND ONE STAGES OTA F. Maloberti Department of Electronics Integrated Microsystem Group University of Pavia, 7100 Pavia, Italy franco@ele.unipv.it tel. +39-38-50505; fax. +39-038-505677 474 EE Department

More information

PROBLEM SET #7. EEC247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2015 C. Nguyen. Issued: Monday, April 27, 2015

PROBLEM SET #7. EEC247B / ME C218 INTRODUCTION TO MEMS DESIGN SPRING 2015 C. Nguyen. Issued: Monday, April 27, 2015 Issued: Monday, April 27, 2015 PROBLEM SET #7 Due (at 9 a.m.): Friday, May 8, 2015, in the EE C247B HW box near 125 Cory. Gyroscopes are inertial sensors that measure rotation rate, which is an extremely

More information

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,

More information

Design and Simulation of A CMOS-MEMS Accelerometer

Design and Simulation of A CMOS-MEMS Accelerometer Design and Simulation of A CMOS-MEMS Accelerometer by Gang Zhang B.S., Tsinghua University (1994) A Project Report Submitted to the Graduate School In Partial Fulfillment of the Requirements for the Degree

More information

2. Single Stage OpAmps

2. Single Stage OpAmps /74 2. Single Stage OpAmps Francesc Serra Graells francesc.serra.graells@uab.cat Departament de Microelectrònica i Sistemes Electrònics Universitat Autònoma de Barcelona paco.serra@imb-cnm.csic.es Integrated

More information

Last Name Girosco Given Name Pio ID Number

Last Name Girosco Given Name Pio ID Number Last Name Girosco Given Name Pio ID Number 0170130 Question n. 1 Which is the typical range of frequencies at which MEMS gyroscopes (as studied during the course) operate, and why? In case of mode-split

More information

ADXL311. Ultracompact ±2g Dual-Axis Accelerometer FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION

ADXL311. Ultracompact ±2g Dual-Axis Accelerometer FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION Ultracompact ±2g Dual-Axis Accelerometer ADXL311 FEATURES High resolution Dual-axis accelerometer on a single IC chip 5 mm 5 mm 2 mm LCC package Low power

More information

CMOS Instrumentation Amplifier with Offset Cancellation Circuitry for Biomedical Application

CMOS Instrumentation Amplifier with Offset Cancellation Circuitry for Biomedical Application CMOS Instrumentation Amplifier with Offset Cancellation Circuitry for Biomedical Application Author Mohd-Yasin, Faisal, Yap, M., I Reaz, M. Published 2006 Conference Title 5th WSEAS Int. Conference on

More information

A Linear CMOS Low Drop-Out Voltage Regulator in a 0.6µm CMOS Technology

A Linear CMOS Low Drop-Out Voltage Regulator in a 0.6µm CMOS Technology International Journal of Electronics and Electrical Engineering Vol. 3, No. 3, June 2015 A Linear CMOS Low DropOut Voltage Regulator in a 0.6µm CMOS Technology Mohammad Maadi Middle East Technical University,

More information

Advanced Operational Amplifiers

Advanced Operational Amplifiers IsLab Analog Integrated Circuit Design OPA2-47 Advanced Operational Amplifiers כ Kyungpook National University IsLab Analog Integrated Circuit Design OPA2-1 Advanced Current Mirrors and Opamps Two-stage

More information

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET)

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET) Difference between BJTs and FETs Transistors can be categorized according to their structure, and two of the more commonly known transistor structures, are the BJT and FET. The comparison between BJTs

More information

444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407

444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407 Index A Accuracy active resistor structures, 46, 323, 328, 329, 341, 344, 360 computational circuits, 171 differential amplifiers, 30, 31 exponential circuits, 285, 291, 292 multifunctional structures,

More information

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,

More information

A Switched-Capacitor Band-Pass Biquad Filter Using a Simple Quasi-unity Gain Amplifier

A Switched-Capacitor Band-Pass Biquad Filter Using a Simple Quasi-unity Gain Amplifier A Switched-Capacitor Band-Pass Biquad Filter Using a Simple Quasi-unity Gain Amplifier Hugo Serra, Nuno Paulino, and João Goes Centre for Technologies and Systems (CTS) UNINOVA Dept. of Electrical Engineering

More information

Solid State Devices & Circuits. 18. Advanced Techniques

Solid State Devices & Circuits. 18. Advanced Techniques ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular

More information

EPAD OPERATIONAL AMPLIFIER

EPAD OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC. ALD1722E/ALD1722 EPAD OPERATIONAL AMPLIFIER KEY FEATURES EPAD ( Electrically Programmable Analog Device) User programmable V OS trimmer Computer-assisted trimming Rail-to-rail

More information

Electronics basics for MEMS and Microsensors course

Electronics basics for MEMS and Microsensors course Electronics basics for course, a.a. 2017/2018, M.Sc. in Electronics Engineering Transfer function 2 X(s) T(s) Y(s) T S = Y s X(s) The transfer function of a linear time-invariant (LTI) system is the function

More information

MEMS-FABRICATED ACCELEROMETERS WITH FEEDBACK COMPENSATION

MEMS-FABRICATED ACCELEROMETERS WITH FEEDBACK COMPENSATION MEMS-FABRICATED ACCELEROMETERS WITH FEEDBACK COMPENSATION Yonghwa Park*, Sangjun Park*, Byung-doo choi*, Hyoungho Ko*, Taeyong Song*, Geunwon Lim*, Kwangho Yoo*, **, Sangmin Lee*, Sang Chul Lee*, **, Ahra

More information

Surface Micromachining

Surface Micromachining Surface Micromachining An IC-Compatible Sensor Technology Bernhard E. Boser Berkeley Sensor & Actuator Center Dept. of Electrical Engineering and Computer Sciences University of California, Berkeley Sensor

More information

Analysis of 1=f Noise in CMOS Preamplifier With CDS Circuit

Analysis of 1=f Noise in CMOS Preamplifier With CDS Circuit IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 49, NO. 4, AUGUST 2002 1819 Analysis of 1=f Noise in CMOS Preamplifier With CDS Circuit Tae-Hoon Lee, Gyuseong Cho, Hee Joon Kim, Seung Wook Lee, Wanno Lee, and

More information

Digitally Tuned Low Power Gyroscope

Digitally Tuned Low Power Gyroscope Digitally Tuned Low Power Gyroscope Bernhard E. Boser & Chinwuba Ezekwe Berkeley Sensor & Actuator Center Dept. of Electrical Engineering and Computer Sciences University of California, Berkeley B. Boser

More information

Overcoming Offset. Prof. Kofi Makinwa. Electronic Instrumentation Laboratory / DIMES Delft University of Technology Delft, The Netherlands

Overcoming Offset. Prof. Kofi Makinwa. Electronic Instrumentation Laboratory / DIMES Delft University of Technology Delft, The Netherlands Overcoming Offset Prof. Kofi Makinwa Electronic Instrumentation Laboratory / DIMES Delft University of Technology Delft, The Netherlands email: k.a.a.makinwa@tudelft.nl Motivation The offset of amplifiers

More information

Single Supply, Rail to Rail Low Power FET-Input Op Amp AD820

Single Supply, Rail to Rail Low Power FET-Input Op Amp AD820 a FEATURES True Single Supply Operation Output Swings Rail-to-Rail Input Voltage Range Extends Below Ground Single Supply Capability from + V to + V Dual Supply Capability from. V to 8 V Excellent Load

More information

A Micropower Front-end Interface for Differential-Capacitive Sensor Systems

A Micropower Front-end Interface for Differential-Capacitive Sensor Systems A Micropower Front-end Interface for Differential-Capacitive Sensor Systems T.G. Constandinou, J. Georgiou and C. Toumazou Abstract: This letter presents a front-end circuit for interfacing to differential

More information

Chapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier

Chapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier Chapter 5 Operational Amplifiers and Source Followers 5.1 Operational Amplifier In single ended operation the output is measured with respect to a fixed potential, usually ground, whereas in double-ended

More information

A Micro-Power Mixed Signal IC for Battery-Operated Burglar Alarm Systems

A Micro-Power Mixed Signal IC for Battery-Operated Burglar Alarm Systems A Micro-Power Mixed Signal IC for Battery-Operated Burglar Alarm Systems Silvio Bolliri Microelectronic Laboratory, Department of Electrical and Electronic Engineering University of Cagliari bolliri@diee.unica.it

More information

Dimensions in inches (mm) .268 (6.81).255 (6.48) .390 (9.91).379 (9.63) .045 (1.14).030 (.76) 4 Typ. Figure 1. Typical application circuit.

Dimensions in inches (mm) .268 (6.81).255 (6.48) .390 (9.91).379 (9.63) .045 (1.14).030 (.76) 4 Typ. Figure 1. Typical application circuit. LINEAR OPTOCOUPLER FEATURES Couples AC and DC signals.% Servo Linearity Wide Bandwidth, > KHz High Gain Stability, ±.%/C Low Input-Output Capacitance Low Power Consumption, < mw Isolation Test Voltage,

More information

Small and Thin ±18 g Accelerometer ADXL321

Small and Thin ±18 g Accelerometer ADXL321 Small and Thin ±18 g Accelerometer ADXL321 FEATURES Small and thin 4 mm 4 mm 1.4 mm LFCSP package 3 mg resolution at Hz Wide supply voltage range: 2.4 V to 6 V Low power: 3 µa at VS = 2.4 V (typ) Good

More information

Single Supply, Rail to Rail Low Power FET-Input Op Amp AD820

Single Supply, Rail to Rail Low Power FET-Input Op Amp AD820 a FEATURES True Single Supply Operation Output Swings Rail-to-Rail Input Voltage Range Extends Below Ground Single Supply Capability from V to V Dual Supply Capability from. V to 8 V Excellent Load Drive

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point. Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring

More information

Electronics - PHYS 2371/2 TODAY

Electronics - PHYS 2371/2 TODAY TODAY 4-terminal linear amplifier Op-Amp Basics, Ch-28, 31 Op-Amp Golden Rules for operation Op-amp gain, impedance, frequency response Videos Lab-6 Overview 1 Review Semiconductors Semiconductors Resistivity

More information

QUAD 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER

QUAD 5V RAIL-TO-RAIL PRECISION OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC. ALD472A/ALD472B ALD472 QUAD 5V RAILTORAIL PRECISION OPERATIONAL AMPLIFIER GENERAL DESCRIPTION The ALD472 is a quad monolithic precision CMOS railtorail operational amplifier

More information

Small, Low Power, 3-Axis ±3 g Accelerometer ADXL335

Small, Low Power, 3-Axis ±3 g Accelerometer ADXL335 Small, Low Power, 3-Axis ±3 g Accelerometer ADXL335 FEATURES 3-axis sensing Small, low profile package 4 mm 4 mm 1.45 mm LFCSP Low power : 35 µa (typical) Single-supply operation: 1.8 V to 3.6 V 1, g shock

More information

3-Stage Transimpedance Amplifier

3-Stage Transimpedance Amplifier 3-Stage Transimpedance Amplifier ECE 3400 - Dr. Maysam Ghovanloo Garren Boggs TEAM 11 Vasundhara Rawat December 11, 2015 Project Specifications and Design Approach Goal: Design a 3-stage transimpedance

More information

EE C245 ME C218 Introduction to MEMS Design

EE C245 ME C218 Introduction to MEMS Design EE C45 ME C18 Introduction to MEMS Design Fall 008 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 9470 Lecture 7: Noise &

More information

Summary 185. Chapter 4

Summary 185. Chapter 4 Summary This thesis describes the theory, design and realization of precision interface electronics for bridge transducers and thermocouples that require high accuracy, low noise, low drift and simultaneously,

More information

INF4420. Outline. Switched capacitor circuits. Switched capacitor introduction. MOSFET as an analog switch 1 / 26 2 / 26.

INF4420. Outline. Switched capacitor circuits. Switched capacitor introduction. MOSFET as an analog switch 1 / 26 2 / 26. INF4420 Switched capacitor circuits Spring 2012 Jørgen Andreas Michaelsen (jorgenam@ifi.uil.no) 1 / 26 Outline Switched capacitor introduction MOSFET as an analog switch 2 / 26 Introduction Discrete time

More information

ELC224 Final Review (12/10/2009) Name:

ELC224 Final Review (12/10/2009) Name: ELC224 Final Review (12/10/2009) Name: Select the correct answer to the problems 1 through 20. 1. A common-emitter amplifier that uses direct coupling is an example of a dc amplifier. 2. The frequency

More information

A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear s 6GHz Complementary Bipolar Process

A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear s 6GHz Complementary Bipolar Process A 7ns, 6mA, Single-Supply Comparator Fabricated on Linear s 6GHz Complementary Bipolar Process Introduction The is an ultrafast (7ns), low power (6mA), single-supply comparator designed to operate on either

More information

Lecture 23: PLLs. Office hour on Monday moved to 1-2pm and 3:30-4pm Final exam next Wednesday, in class

Lecture 23: PLLs. Office hour on Monday moved to 1-2pm and 3:30-4pm Final exam next Wednesday, in class EE241 - Spring 2013 Advanced Digital Integrated Circuits Lecture 23: PLLs Announcements Office hour on Monday moved to 1-2pm and 3:30-4pm Final exam next Wednesday, in class Open book open notes Project

More information

Matched Monolithic Quad Transistor MAT04

Matched Monolithic Quad Transistor MAT04 a FEATURES Low Offset Voltage: 200 V max High Current Gain: 400 min Excellent Current Gain Match: 2% max Low Noise Voltage at 100 Hz, 1 ma: 2.5 nv/ Hz max Excellent Log Conformance: rbe = 0.6 max Matching

More information

Design of Analog CMOS Integrated Circuits

Design of Analog CMOS Integrated Circuits Design of Analog CMOS Integrated Circuits Behzad Razavi Professor of Electrical Engineering University of California, Los Angeles H Boston Burr Ridge, IL Dubuque, IA Madison, WI New York San Francisco

More information

Lecture 3 Switched-Capacitor Circuits Trevor Caldwell

Lecture 3 Switched-Capacitor Circuits Trevor Caldwell Advanced Analog Circuits Lecture 3 Switched-Capacitor Circuits Trevor Caldwell trevor.caldwell@analog.com Lecture Plan Date Lecture (Wednesday 2-4pm) Reference Homework 2017-01-11 1 MOD1 & MOD2 ST 2, 3,

More information

Small, Low Power, 3-Axis ±3 g i MEMS Accelerometer ADXL330

Small, Low Power, 3-Axis ±3 g i MEMS Accelerometer ADXL330 Small, Low Power, 3-Axis ±3 g i MEMS Accelerometer ADXL33 FEATURES 3-axis sensing Small, low-profile package 4 mm 4 mm 1.4 mm LFCSP Low power 18 μa at VS = 1.8 V (typical) Single-supply operation 1.8 V

More information

EE290C - Spring 2004 Advanced Topics in Circuit Design High-Speed Electrical Interfaces. Announcements

EE290C - Spring 2004 Advanced Topics in Circuit Design High-Speed Electrical Interfaces. Announcements EE290C - Spring 04 Advanced Topics in Circuit Design High-Speed Electrical Interfaces Lecture 11 Components Phase-Locked Loops Viterbi Decoder Borivoje Nikolic March 2, 04. Announcements Homework #2 due

More information

UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency

UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency UMAINE ECE Morse Code ROM and Transmitter at ISM Band Frequency Jamie E. Reinhold December 15, 2011 Abstract The design, simulation and layout of a UMAINE ECE Morse code Read Only Memory and transmitter

More information

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known

More information

An Analog Phase-Locked Loop

An Analog Phase-Locked Loop 1 An Analog Phase-Locked Loop Greg Flewelling ABSTRACT This report discusses the design, simulation, and layout of an Analog Phase-Locked Loop (APLL). The circuit consists of five major parts: A differential

More information

Rail-To-Rail Output Op-Amp Design with Negative Miller Capacitance Compensation

Rail-To-Rail Output Op-Amp Design with Negative Miller Capacitance Compensation Rail-To-Rail Op-Amp Design with Negative Miller Capacitance Compensation Muhaned Zaidi, Ian Grout, Abu Khari bin A ain Abstract In this paper, a two-stage op-amp design is considered using both Miller

More information

DIGITAL ACCELEROMETER WITH FEEDBACK CONTROL USING SIGMA DELTA MODULATION

DIGITAL ACCELEROMETER WITH FEEDBACK CONTROL USING SIGMA DELTA MODULATION DIGITAL ACCELEROMETER WITH FEEDBACK CONTROL USING SIGMA DELTA MODULATION Tran Duc Tan*, Nguyen Thang Long*, Vu Ngoc Hung**, Nguyen Phu Thuy*,** * Faculty of Electronics and Telecommunication, College of

More information

TFT-LCD DC/DC Converter with Integrated Backlight LED Driver

TFT-LCD DC/DC Converter with Integrated Backlight LED Driver TFT-LCD DC/DC Converter with Integrated Backlight LED Driver Description The is a step-up current mode PWM DC/DC converter (Ch-1) built in an internal 1.6A, 0.25Ω power N-channel MOSFET and integrated

More information

System-on-Chip. Electro-thermal effects in radio ICs. Overview. Tri-band GSM radio receiver (front-end)

System-on-Chip. Electro-thermal effects in radio ICs. Overview. Tri-band GSM radio receiver (front-end) System-on-Chip Overview Pietro Andreani Dept. of Electrical and Information Technology Lund University, Sweden Material from Sensitivity Degradation in a Tri-Band GSM BiCMOS Direct-Conversion Receiver

More information

P96.67 X Y Z ADXL330. Masse 10V. ENS-Lyon Département Physique-Enseignement. Alimentation 10V 1N nF. Masse

P96.67 X Y Z ADXL330. Masse 10V. ENS-Lyon Département Physique-Enseignement. Alimentation 10V 1N nF. Masse P96.67 X Y Z V Masse ENS-Lyon Département Physique-Enseignement 1N47 nf 78 Alimentation E M V Masse Benoit CAPITAINE Technicien ENS LYON mai 1 ACCEL BOARD Additional Board All Mikroelektronika s development

More information

Experiment 1: Amplifier Characterization Spring 2019

Experiment 1: Amplifier Characterization Spring 2019 Experiment 1: Amplifier Characterization Spring 2019 Objective: The objective of this experiment is to develop methods for characterizing key properties of operational amplifiers Note: We will be using

More information

Low Cost 100 g Single Axis Accelerometer with Analog Output ADXL190*

Low Cost 100 g Single Axis Accelerometer with Analog Output ADXL190* a FEATURES imems Single Chip IC Accelerometer 40 Milli-g Resolution Low Power ma 400 Hz Bandwidth +5.0 V Single Supply Operation 000 g Shock Survival APPLICATIONS Shock and Vibration Measurement Machine

More information

Operational Amplifiers

Operational Amplifiers Operational Amplifiers Table of contents 1. Design 1.1. The Differential Amplifier 1.2. Level Shifter 1.3. Power Amplifier 2. Characteristics 3. The Opamp without NFB 4. Linear Amplifiers 4.1. The Non-Inverting

More information

SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS

SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS SG2525A SG3525A REGULATING PULSE WIDTH MODULATORS 8 TO 35 V OPERATION 5.1 V REFERENCE TRIMMED TO ± 1 % 100 Hz TO 500 KHz OSCILLATOR RANGE SEPARATE OSCILLATOR SYNC TERMINAL ADJUSTABLE DEADTIME CONTROL INTERNAL

More information

HOME ASSIGNMENT. Figure.Q3

HOME ASSIGNMENT. Figure.Q3 HOME ASSIGNMENT 1. For the differential amplifier circuit shown below in figure.q1, let I=1 ma, V CC =5V, v CM = -2V, R C =3kΩ and β=100. Assume that the BJTs have v BE =0.7 V at i C =1 ma. Find the voltage

More information

Applied Electronics II

Applied Electronics II Applied Electronics II Chapter 3: Operational Amplifier Part 1- Op Amp Basics School of Electrical and Computer Engineering Addis Ababa Institute of Technology Addis Ababa University Daniel D./Getachew

More information

HA-2600, HA Features. 12MHz, High Input Impedance Operational Amplifiers. Applications. Pinouts. Ordering Information

HA-2600, HA Features. 12MHz, High Input Impedance Operational Amplifiers. Applications. Pinouts. Ordering Information HA26, HA26 September 998 File Number 292.3 2MHz, High Input Impedance Operational Amplifiers HA26/26 are internally compensated bipolar operational amplifiers that feature very high input impedance (MΩ,

More information

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers ECE 442 Solid State Devices & Circuits 15. Differential Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 442 Jose Schutt Aine 1 Background

More information

6. OpAmp Application Examples

6. OpAmp Application Examples Preamp MRC GmC Switched-Cap 1/31 6. OpAmp Application Examples Francesc Serra Graells francesc.serra.graells@uab.cat Departament de Microelectrònica i Sistemes Electrònics Universitat Autònoma de Barcelona

More information

DESIGN AND ANALYSIS OF LOW POWER CHARGE PUMP CIRCUIT FOR PHASE-LOCKED LOOP

DESIGN AND ANALYSIS OF LOW POWER CHARGE PUMP CIRCUIT FOR PHASE-LOCKED LOOP DESIGN AND ANALYSIS OF LOW POWER CHARGE PUMP CIRCUIT FOR PHASE-LOCKED LOOP 1 B. Praveen Kumar, 2 G.Rajarajeshwari, 3 J.Anu Infancia 1, 2, 3 PG students / ECE, SNS College of Technology, Coimbatore, (India)

More information

Low Cost, Precision JFET Input Operational Amplifiers ADA4000-1/ADA4000-2/ADA4000-4

Low Cost, Precision JFET Input Operational Amplifiers ADA4000-1/ADA4000-2/ADA4000-4 Low Cost, Precision JFET Input Operational Amplifiers ADA-/ADA-/ADA- FEATURES High slew rate: V/μs Fast settling time Low offset voltage:.7 mv maximum Bias current: pa maximum ± V to ±8 V operation Low

More information

Switched Capacitor Concepts & Circuits

Switched Capacitor Concepts & Circuits Switched apacitor oncepts & ircuits Outline Why Switched apacitor circuits? Historical Perspective Basic Building Blocks Switched apacitors as Resistors Switched apacitor Integrators Discrete time & charge

More information

Chapter 13: Introduction to Switched- Capacitor Circuits

Chapter 13: Introduction to Switched- Capacitor Circuits Chapter 13: Introduction to Switched- Capacitor Circuits 13.1 General Considerations 13.2 Sampling Switches 13.3 Switched-Capacitor Amplifiers 13.4 Switched-Capacitor Integrator 13.5 Switched-Capacitor

More information

Design of High Gain Two stage Op-Amp using 90nm Technology

Design of High Gain Two stage Op-Amp using 90nm Technology Design of High Gain Two stage Op-Amp using 90nm Technology Shaik Aqeel 1, P. Krishna Deva 2, C. Mahesh Babu 3 and R.Ganesh 4 1 CVR College of Engineering/UG Student, Hyderabad, India 2 CVR College of Engineering/UG

More information

1.8 V, Micropower, Zero-Drift, Rail-to-Rail Input/Output Op Amp ADA4051-2

1.8 V, Micropower, Zero-Drift, Rail-to-Rail Input/Output Op Amp ADA4051-2 .8 V, Micropower, Zero-Drift, Rail-to-Rail Input/Output Op Amp ADA45-2 FEATURES Very low supply current: 3 μa Low offset voltage: 5 μv maximum Offset voltage drift: 2 nv/ C Single-supply operation:.8 V

More information

CHAPTER 3. Instrumentation Amplifier (IA) Background. 3.1 Introduction. 3.2 Instrumentation Amplifier Architecture and Configurations

CHAPTER 3. Instrumentation Amplifier (IA) Background. 3.1 Introduction. 3.2 Instrumentation Amplifier Architecture and Configurations CHAPTER 3 Instrumentation Amplifier (IA) Background 3.1 Introduction The IAs are key circuits in many sensor readout systems where, there is a need to amplify small differential signals in the presence

More information

DESIGN OF A NOVEL CURRENT MIRROR BASED DIFFERENTIAL AMPLIFIER DESIGN WITH LATCH NETWORK. Thota Keerthi* 1, Ch. Anil Kumar 2

DESIGN OF A NOVEL CURRENT MIRROR BASED DIFFERENTIAL AMPLIFIER DESIGN WITH LATCH NETWORK. Thota Keerthi* 1, Ch. Anil Kumar 2 ISSN 2277-2685 IJESR/October 2014/ Vol-4/Issue-10/682-687 Thota Keerthi et al./ International Journal of Engineering & Science Research DESIGN OF A NOVEL CURRENT MIRROR BASED DIFFERENTIAL AMPLIFIER DESIGN

More information

DESIGN OF A FULLY DIFFERENTIAL HIGH-SPEED HIGH-PRECISION AMPLIFIER

DESIGN OF A FULLY DIFFERENTIAL HIGH-SPEED HIGH-PRECISION AMPLIFIER DESIGN OF A FULLY DIFFERENTIAL HIGH-SPEED HIGH-PRECISION AMPLIFIER Mayank Gupta mayank@ee.ucla.edu N. V. Girish envy@ee.ucla.edu Design I. Design II. University of California, Los Angeles EE215A Term Project

More information

Workshop ESSCIRC. Low-Power Data Acquisition System For Very Small Signals At Low Frequencies With12-Bit- SAR-ADC. 17. September 2010.

Workshop ESSCIRC. Low-Power Data Acquisition System For Very Small Signals At Low Frequencies With12-Bit- SAR-ADC. 17. September 2010. Workshop ESSCIRC Low-Power Data Acquisition System For Very Small Signals At Low Frequencies With12-Bit- SAR-ADC 17. September 2010 Christof Dohmen Outline System Overview Analog-Front-End Chopper-Amplifier

More information

DAT175: Topics in Electronic System Design

DAT175: Topics in Electronic System Design DAT175: Topics in Electronic System Design Analog Readout Circuitry for Hearing Aid in STM90nm 21 February 2010 Remzi Yagiz Mungan v1.10 1. Introduction In this project, the aim is to design an adjustable

More information

Voltage-to-Frequency and Frequency-to-Voltage Converter ADVFC32

Voltage-to-Frequency and Frequency-to-Voltage Converter ADVFC32 a FEATURES High Linearity 0.01% max at 10 khz FS 0.05% max at 100 khz FS 0.2% max at 500 khz FS Output TTL/CMOS Compatible V/F or F/V Conversion 6 Decade Dynamic Range Voltage or Current Input Reliable

More information

Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor

Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,

More information

Topic 2. Basic MOS theory & SPICE simulation

Topic 2. Basic MOS theory & SPICE simulation Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/

More information

Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor

Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,

More information

Analog Integrated Circuit Design Exercise 1

Analog Integrated Circuit Design Exercise 1 Analog Integrated Circuit Design Exercise 1 Integrated Electronic Systems Lab Prof. Dr.-Ing. Klaus Hofmann M.Sc. Katrin Hirmer, M.Sc. Sreekesh Lakshminarayanan Status: 21.10.2015 Pre-Assignments The lecture

More information

Chapter 13 Oscillators and Data Converters

Chapter 13 Oscillators and Data Converters Chapter 13 Oscillators and Data Converters 13.1 General Considerations 13.2 Ring Oscillators 13.3 LC Oscillators 13.4 Phase Shift Oscillator 13.5 Wien-Bridge Oscillator 13.6 Crystal Oscillators 13.7 Chapter

More information

Metal-Oxide-Silicon (MOS) devices PMOS. n-type

Metal-Oxide-Silicon (MOS) devices PMOS. n-type Metal-Oxide-Silicon (MOS devices Principle of MOS Field Effect Transistor transistor operation Metal (poly gate on oxide between source and drain Source and drain implants of opposite type to substrate.

More information

PSD Characteristics. Position Sensing Detectors

PSD Characteristics. Position Sensing Detectors PSD Characteristics Position Sensing Detectors Silicon photodetectors are commonly used for light power measurements in a wide range of applications such as bar-code readers, laser printers, medical imaging,

More information

Linear IC s and applications

Linear IC s and applications Questions and Solutions PART-A Unit-1 INTRODUCTION TO OP-AMPS 1. Explain data acquisition system Jan13 DATA ACQUISITION SYSYTEM BLOCK DIAGRAM: Input stage Intermediate stage Level shifting stage Output

More information