Multi-Band CMOS Low Noise Amplifiers Utilizing Transformers

Transcription

1 4S_AVIC2014, Ho Chi Minh City, Vietnam Oct. 23, 2014 Multi-Band CMOS Low Noise Amplifiers Utilizing Transformers Masataka Kamiyama Daiki Oki Satoru Kawauchi Congbing Li Nobuo Takahashi Toru Dan Seiichi Banba Haruo Kobayashi Gunma University ON Semiconductor Toyohashi University of Technology Gunma University Kobayashi Lab, Japan

2 Outline 2/30 Research Background & Objective Dual Band LNA Circuit Structure & Principle Simulation Triple-Band LNA Circuit Structure & Principle Simulation Consideration Layout of Inductor & Transformer Conclusion

3 Outline 3/30 Research Background & Objective Dual Band LNA Circuit Structure & Principle Simulation Triple-Band LNA Circuit Structure & Principle Simulation Consideration Layout of Inductor & Transformer Conclusion

4 Research Background & Objective 4/30 Radio Transceiver IQ-Mixer LNA A/D DSP BPF SW or DUP BPF BPF PLL PA D/A BPF BPF Receiver Side Low Noise Amplifier(LNA) Amplify small signal without noise & distortion Challenge Multi-Band performance for many wireless standards

5 Research Goal 5/30 Radio Transceiver IQ-Mixer LNA A/D DSP BPF SW or DUP BPF BPF PLL PA D/A BPF BPF Reference Dual-Band LNA extension Proposal Triple-Band LNA

6 Outline 6/30 Research Background & Objective Dual Band LNA Circuit Structure & Principle Simulation Triple-Band LNA Circuit Structure & Principle Simulation Consideration Layout of Inductor & Transformer Conclusion

7 Research Paper 7/30 Objective Extend Multi-Band for Narrowband Amplifier Technique of Dual-Band LNA Utilizing Transformers Paper Title A Dual-Band 2.45/6 GHz CMOS LNA Utilizing a Dual-Resonant Transformer-Based Matching Network Author N. M.Neihart with Iowa University J. Brown X. Yu Journal IEEE Trans. on Circuits and Systems I, (Aug. 2012)

8 Neihart s Dual-Band LNA 8/30 M 3 L L V SWITCH RF out Dual-Band LNA Utilizing Transformers C L G, L 2 : Transformer-coupled C L with coupling coefficient k Load side RF in k L G L 2 C 2 M 2 M 1 L S Switch 2 resonance frequencies by M 3 Input matching side Realized 2 matching points by transformer-coupling

9 Neihart s Dual-Band LNA 9/30 Load Side C M 3 L L C L V SWITCH Dual-Band LNA Utilizing Transformers L G, L 2 : Transformer-coupled with coupling coefficient k RF out Load side RF in k L G L 2 C 2 M 2 M 1 L S Input Matching Side Switch 2 resonance frequencies by M 3 Input matching side Realized 2 matching points by transformer-coupling Small-Signal Equivalent Model v n,rs R S v in L g v out v s i in k v gs C gs i ds Z out Z in L 2 C 2 L S

10 Neihart s Model Circuit Analysis 10/30 v n,rs R S v in L g v out v s i in k v gs C gs i ds Z out Z in L 2 i C 2 L S Input impedance Z in Z in = g ml s C gs + j ω L g + L s 1 ωc gs + ω3 M 2 C 2 1 ω 2 L 2 C 2 M = k L g L 2 Real Part R s (50Ω) Imaginary Part 0 ω: resonance frequency Solving Im Z in = 0 ω = ± a2 + b 2 a 4 + b 4 + a 2 b 2 (4k 2 2) 2(1 k 2 ) a = 1 L 1 C gs, b = 1 L 2 C 2 4 solutions (2 positive numbers, 2 negative numbers) resonance frequencies

11 Simulation Circuit 11/30 Cadence Spectre 90nm process MOS : tsmcn90rf R,C, L: analoglib L L 1nH C L1 1pF M 3 C L2 4pF V SWITCH v out v s R S RF in C block 1nF R B 100kΩ V B 0.6V L 2 4nH L G 8.2nH k:0.6 C 2 700fF M 2 M 1 L S 180pH M 2 W=30um L=100nm RF out M 1 W=160um L=100nm C gs = 129.4fF C block 1nF

12 Simulation Results SP Analysis 12/30 High gains at matching points SP : Scattering Parameter S11(Input Reflection) f_low S21(Gain) f_high S21(Gain) Frequency[GHz] Two matching points (Dual-Band performance)

13 Outline 13/30 Research Background & Objective Dual Band LNA Circuit Structure & Principle Simulation Triple-Band LNA Circuit Structure & Principle Simulation Consideration Layout of Inductor & Transformer Conclusion

14 Extension to Triple-Band 14/30 Number of Transformers 0 Number of Resonance Frequencies 1 (Single-Band) 1 2 (Dual-Band) Our Design 2 Expectation Our challenge 3 (Triple-Band) Two transformers can realize Triple-Band

15 Proposed Triple-Band LNA 15/30 Two types of Triple-Band LNA circuits Main Secondary Side Main Secondary Side Third Side Transformer-coupled L G - L 2 L G2 - L 3 Structure Main - Secondary Side - Third Side Transformer-coupled L G - L 2 L G - L 3 Structure Main - Two Secondary Side

16 Analysis of Triple-Band LNA1 16/30 Small-Signal Equivalent Model (Triple-Band LNA) v n,rs R S v in v i s in Z in k k L g L L 2 G2 v gs C gs i ds C 2 L S L 3 Z out v out C 3 Input impedance Z in Z in = g ml s C gs + j ω L g + L s 1 ωc gs jω 5 M 2 1 C 2 C 3 L 3 jω 3 2 C 2 M 1 + ω 4 C 2 C 3 M 2 2 C 3 L 3 C 2 L 2 + L g2 + ω 2 C 3 L 3 + C 2 L 2 + L g2 1 Imaginary Part 0

17 Analysis of Triple-Band LNA1 17/30 Small-Signal Equivalent Model (Triple-Band LNA) v n,rs R S v in v i s in Z in k k L g L L 2 G2 v gs C gs i ds C 2 L S L 3 Z out v out By Im Z in = 0 C 3 Calculate formula for determining resonance frequencies ω 6 C gs C 2 C 3 L g + L s L 2 + L g2 L 3 L g + L s k 2 2 L g2 L 3 k 2 1 L g L 2 L 3 +ω 4 L g + L s C gs L 2 + L g2 C 2 L g + L s C gs L 3 C 3 L 2 + L g2 C 2 L 3 C 3 +k 2 2 L g2 C 2 L 3 C 3 + k 2 1 L g C gs L 2 C 2 +ω 2 L g + L s C gs + L 2 + L g2 C 2 + L 3 C 3 1 = 0 6-th order equation (3 resonance frequencies)

18 Simulation Circuit 18/30 C L1 1pF L L 1nH M 3 V SW1 M 4 V SW2 v out R S RF in C block 1nF L G 8.2nH M 2 C L2 2pF C L3 2pF RF out C block 1nF v s R B 100kΩ V B 0.6V L 2, L g2, L 3 4nH k 1 : 0.6 L C 2 2 L G2 k 2 : 0.6 L 3 C 3 660fF M 1 L S 200pH C 2 300fF M 2 W=30um L=100nm M 1 W=160um L=100nm C gs = 129.4fF

19 Simulation Results SP Analysis 19/30 SP : Scattering Parameter S11(Input Reflection) f_low S21(Gain) f_mid S21(Gain) f_high S21(Gain) Frequency[GHz]

20 Outline 20/30 Research Background & Objective Dual Band LNA Circuit Structure & Principle Simulation Triple-Band LNA Circuit Structure & Principle Simulation Consideration Layout of Inductor & Transformer Conclusion

21 21/30 Problems when extending to Triple-Band Dual-Band LNA Dual-Band LNA Adding Inductor Triple-Band LNA Problems Area increase Triple-Band LNA Noise increases (by associated circuits with inductor) Consider inductor layout for solving these problems!!

22 Realization of Inductor on chip 22/30 Thick Wiring at Top Layer Inductor is realized in high Q value at top layer on chip Section View of LSI /105151/?SS=imgview&FD= ( Q value is high, inductor s parasitic resistance is small)

23 Consideration of Layout 23/30 Schematic diagram of a transformer or inductors Coupling coefficient is determined by shared area of 2 inductors Top view Primary Side Secondary Side Implementation of Dual-Band LNA Transformer Area Ratio 10 : 6 Primary Side k=0.6 Area Ratio Secondary Side

24 Consideration of Layout 24/30 Method 1 top side Primary Side Secondary Side Third Side High Q Value Large Area Secondary Side top Primary Side Method 2 Third Side Secondary Side side High Q Value Small Area Feasible if coupling coefficient is small

25 Triple-Band LNA 25/ Proposed Circuit 1 Proposed Circuit 2 Design circuits as follows: High resonant frequency up to 5 ~ 6GHz Area reduction

26 Comparison of 1 and 2 26/ L G = 8.2nH L 2 = 4nH L g2 = 4nH C 2 = 300fF C 3 = 660fF reduce L G = 4nH L 2 = 3nH L 3 = 5nH C 2 = 600fF C 3 = 880fF L 3 = 4nH k 1 = k 2 = 0.6 k 1 = k 2 = 0.4 Frequency[GHz] Frequency[GHz]

27 Frequency[GHz] Frequency[GHz] Frequency[GHz] Frequency[GHz] 27/30 Comparison of 1 and 2 Coupling Coefficients Proposed Circuit 1 k1:varying k2=0.6 Proposed Circuit 2 k1:varying k2=0.4 f_low f_mid f_high Coupling Coefficient k1 k1=0.6 k2:varying Coupling Coefficient k1 k1=0.4 k2:varying Coupling Coefficient k2 Coupling Coefficient k2

28 Triple-Band LNA 28/ Circuit Coupling Coefficient High k k 1, k 2 =0.6 Low k k 1, k 2 =0.4 Transformer Layout (Conceptual Diagram) Primary Side Third Side Secondary Side Secondary Side Primary Side Third Side Secondary Side Area Large Area Small Area

29 Outline 29/30 Research Background & Objective Dual Band LNA Circuit Structure & Principle Simulation Triple-Band LNA Circuit Structure & Principle Simulation Consideration Layout of Inductor & Transformer Conclusion

30 Conclusion 30/30 Conclusion Proposed & analyzed Triple-Band LNA Showed that proposed Triple-Band LNA circuit 2 can meet higher frequency with small area Challenge for the future Detailed Triple-Band LNA design by electromagnetic field analysis of transformer Additional features of higher order multi-band.

31 Appendix 31/30

32 About LNA 32/30 Frequency Bandwidth Resistance Feedback LNA Wideband Inductive source degeneration LNA Focused Method Narrowband Gain Low High Noise Bad Good

33 LNA with multiple bands 33/30 To include many narrowband in one Band 1 Band 2 Band N proposed Band 1, 2, achieved reduction of area Gain (S21) Gain (S21) matching (S11) Frequency matching (S11) Frequency

34 Questions! 34/30 Q. 発表資料には 高周波回路の解析に重要なパラメータであるNFについて載っていないのですが どうですか? A. 論文には載っているのですが 資料には載っていません 高周波のマッチング点で約 4dBです Q. どのようなアプリケーションを見越していますか? A. 携帯用端末の送受信 Q. インダクタの提案をしていますが EMI シミュレーションはどうですか? A.EMI シミュレーションはまだしていません