ADA GHz CATV Amplifier Data Sheet - Rev 2.6
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- Rachel Robbins
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1 1 GHz CATV Amplifier FEATURES 15 db Gain Wide Bandwidth: 50 MHz to 1 GHz High Linearity : +15 dbm IIP3 (+8 V supply) Low Distortion Low Noise Figure: 2.0 db Single +4 V to +9 V Supply SOIC-16 and SOT-89 Package Options RoHS Compliant Package Applciations CATV Drop Amplifier Low noise amplifier for CATV Set-Top Boxes Home gateways Post Amp for RF overlay in FTTH/RFOG ONUs S3 Package Modified 16 Pin SOIC S24 Package SOT-89 PRODUCT DESCIPTION The ADA10000 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers, and CATV Drop Amplifiers. Offered in both a modified 16 lead SOIC package and SOT-89 package, it is well suited for use in amplifiers where small size, reduced component count, and high reliability are important. RF Input RF Output /Bias Figure 1: Block Diagram
2 RFOUT RFIN Figure 2: Pinout - S3 Package Table 1: Pin Description - S3 Package PIN NaME DESCRIPTION PIN NaME DESCRIPTION 1 Ground 16 Ground 2 Ground 15 Ground 3 Ground 14 RFOUT RF Output / Bias 4 Ground 13 Ground 5 Ground 12 Ground 6 RFIN RF Input 11 Ground 7 Ground 10 Ground 8 Ground 9 Ground 2
3 RFIN RFOUT Figure 3: Pinout - S24 Package Table 2: Pin Description - S24 Package PIN NaME DESCRIPTION 1 RFIN RF Input 2 Ground 3 RFOUT RF Output / Bias 4 Ground 3
4 ELECTRICAL CHARACTERISTICS Table 3: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply (S3 package: pin 14) (S24 package: pin 3) RF Power at Input (1) (S3 package: pin 6) (S24 package: pin 1) VDC dbm Storage Temperature +150 C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Notes: (1) RF input pin must be AC-coupled. No DC external bias should be applied. Table 4: Operating Ranges PARAMETER MIN TYP MAX UNIT RF Input / Output Frequency MHz Supply Voltage (VDD) VDC Case Temperature (1) C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) Median time to failure will degrade above this temperature. 4
5 Table 5: Electrical Specifications (TA = +25 C, VDD = +8 VDC, 75 Ω system, see Figures 4 and 5) PARAMETER MIN TYP MAX UNIT COMMENT CSO (1) / CSO (2) 60 / dbc CTB (1) /CTB (2) 65 / dbc Gain db Noise Figure db 2nd Order Input Intercept Point (IIP2) (3) dbm 3rd Order Input Intercept Point dbm (IIP3) (3) Thermal Resistance C/W S3 package S24 package Current Consumption (4) ma Notes: (1) 160 channels, +17 dbmv per channel (measured at output), 6 MHz channel spacing. (2) 80 channels, +19 dbmv per channel (measured at output), 6 MHz channel spacing. (3) Two tones, -10 dbm per tone at input. (4) The device can be operated at Vd d = +6 VDC for lower power dissipation. Refer to Figures 7, 8, 13, and 16 for performance variation with supply voltage. 5
6 VDD 3.9 uh 0.1 uf 1000 pf RFOUT 1000 pf 5.6 nh ADA10000 RFIN Figure 4: Standard Test/Application Circuit - S3 Packaged Device (75 Ω terminations) VDD 820 nh 0.01 uf RFIN 1000 pf 10 nh 180 pf 1 3 ADA10000 RFOUT 0.5 pf 2,4 0.5 pf Figure 5: Standard Test/Application Circuit - S24 Packaged Device (75 Ω terminations) 6
7 S3 PACKAGE PERFORMANCE PERFORMANCE DATA: 50 MHz to 1000 MHz As measured in test circuits shown in Figures 4 and Figure 6: Gain and Noise Figure vs. Frequency - S3 Packaged Device (TA = +25 8C; VDD = +8 V; 75 V systems) Figure 7: Gain and Noise Figure vs. Supply Voltage - S3 Packaged Device (TA = +25 8C; f = 500 MHz; 75 V systems) Gain (db) Gai n NF Figure 8: IIP2 and IIP3 vs. Supply Voltage - S3 Packaged Device (TA = +25 8C; 75 V systems) No is e F igur e (db ) Gain (db) Supply Voltage (V ) Figure 9: Output Power vs. Input Power - S3 Package Device (TA = +25 8C; VDD = +8 V; f = 500 MHz; 75 V systems) Gain NF No is e F igur e (db ) IIP2, IIP 3 (db m) Ou tput Po we r ( db m) IIP 2 IIP Notes: Suppl y V oltag e (V) 1. IIP2 measure at MHz; Input = two tones at MHz and MHz at -10 dbm. 2. IIP3 measured with two tones at the input: MHz and MHz at -10 dbm. Figure 10: Unmatched Device Input Impedance S3 Packaged Device (TA = +25 8C; VDD = +8 V; 75 V systems) Input Power (dbm ) Figure 11: Unmatched Device Output Impedance - S3 Packaged Device (TA = +25 8C; VDD = +8 V; 75 V systems) 1 GHz 50 MHz 1 GHz 50 MHz Refer to the ANADIGICS web site for full 2-port s-parameter data. 7
8 S24 (SOT-89) PACKAGE PERFORMANCE PERFORMANCE DATA: Figure 12: Gain vs. Frequency and Voltage S24 (SOT-89) Packaged Device (TA = +25 8C; 75 V systems) Figure 13: Noise Figure vs. Voltage S24 (SOT-89) Packaged Device (TA = +25 8C; 75 V systems) Gain (db) NF (db) Inpu t R etur n Los s ( db ) Figure 14: Input Return Loss vs. Frequency - S24 Packaged Device (TA = +25 8C; VDD = +8 V; 75 V systems) Ou tput Re turn Los s ( db ) Figure 15: Output Return Loss vs. Frequency - S24 Packaged Device (TA = +25 8C; VDD = +8 V; 75 V systems) Figure 16: IIP2 and IIP3 vs. Supply Voltage - S24 Packaged Device (TA = +25 8C; 75 V systems) Frequency (MHz) Figure 17: Output Power vs. Input Power - S24 Packaged Device (TA = +25 8C; VDD = +8 V; f = 500 MHZ; 75 V systems) IIP2, IIP 3 (db m) Ou tput Po we r ( db m) IIP2 IIP Suppl y Voltage (V ) Notes: 1. IIP2 measure at MHz; Input = two tones at MHz and MHz at -10 dbm. 2. IIP3 measured with two tones at the input: MHz and MHz at -10 dbm Input Power (dbm ) 8
9 Figure 18: Unmatched Device Input Impedance - S24 Packaged Device (TA = +25 8C; VDD = +8 V; 75 V systems) Figure 19: Unmatched Device Output Impedance - S24 Packaged Device (TA = +25 8C; VDD = +8 V; 75 V systems) 50 MHz 50 MHz 1 GHz 1 G Hz Refer to the ANADIGICS web site for full 2-port s-parameter data. 9
10 50 MHz to 1000 MHz DISTORTION DATA- S24 (SOT-89) PACKAGED DEVICE: 80 Channel Data CTB (dbc) Figure 20: CTB vs Frequency and Voltage (80 Flat NTSC Channels; POUT = +30 dbmv/ch) Figure 23: CTB vs Frequency and Output Power (80 Flat NTSC Channels; VDD = +8 V; TA = +25 8C) CTB (dbc) 40dBmV 38dBmV 36dBmV 34dBmV 32dBmV 30dBmV Figure 21: CSO vs Frequency and Voltage (80 Flat NTSC Channels; POUT = +30 dbmv/ch) Figure 24: CSO vs Frequency and Output Power (80 Flat NTSC Channels; VDD = +8 V; TA = +25 8C) CSO (dbc) CSO(dBc) 40dBmV 38dBmV dBmV 34dBmV 32dBmV 30dBmV Figure 22: XMOD vs Frequency and Voltage (80 Flat NTSC Channels; POUT = +30 dbmv/ch) XMOD (dbc) Figure 25: XMOD vs Frequency and Output Power (80 Flat NTSC Channels; VDD = +8 V; TA = +25 8C) XMOD (dbc) dBmV 38dBmV 36dBmV 34dBmV 32dBmV 30dBmV
11 50 MHz to 1000 MHz DISTORTION DATA- S24 (SOT-89) PACKAGED DEVICE: 110 Channel Data Figure 26: CTB vs Frequency and Voltage (110 Flat NTSC Channels; POUT = +30 dbmv/ch) CTB (dbc) Figure 29: CTB vs Frequency and Output Power (110 Flat NTSC Channels; VDD = ma; TA = +25 8C) CTB (dbc) 37dBmV 35dBmV 33dBmV 31dBmV 29dBmV 27dBmV Figure 27: CSO vs Frequency and Voltage (110 Flat NTSC Channels; POUT = +30 dbmv/ch) Figure 30: CSO vs Frequency and Output Power (110 Flat NTSC Channels; VDD = ma; TA = +25 8C) CSO (dbc) CSO (dbc) 37dBmV 35dBmV 33dBmV 31dBmV 29dBmV dBmV Figure 28: XMOD vs Frequency and Voltage (110 Flat NTSC Channels; POUT = +30 dbmv/ch) XMOD (dbc) Figure 31: XMOD vs Frequency and Output Power (110 Flat NTSC Channels; VDD = ma; TA = +25 8C) XMOD (dbc) dBmV 35dBmV 33dBmV 31dBmV 29dBmV 27dBmV
12 50 MHz to 1000 MHz DISTORTION DATA- S24 (SOT-89) PACKAGED DEVICE: 132 Channel Data Figure 32: CTB vs Frequency and Voltage (132 Flat NTSC Channels; POUT = +30 dbmv/ch) CTB (dbc) Figure 35: CTB vs Frequency and Output Power (132 Flat NTSC Channels; VDD = ma; TA = +25 8C) CTB (dbc) dBmV 36dBmV 34dBmV 32dBmV 30dBmV Figure 33: CSO vs Frequency and Voltage (132 Flat NTSC Channels; POUT = +30 dbmv/ch) Figure 36: CSO vs Frequency and Output Power (132 Flat NTSC Channels; VDD = ma; TA = +25 8C -35 CSO (dbc) CSO(dBc) 38dBmV 36dBmV 34dBmV 32dBmV 30dBmV Figure 34: XMOD vs Frequency and Voltage (132 Flat NTSC Channels; POUT = +30 dbmv/ch) XMOD (dbc) Figure 37: XMOD vs Frequency and Output Power (132 Flat NTSC Channels; VDD = ma; TA = +25 8C XMOD (dbc) dBmV 36dBmV 34dBmV 32dBmV 30dBmV 12
13 50 MHz to 1000 MHz DISTORTION DATA- S24 (SOT-89) PACKAGED DEVICE: 155 Channel Data Figure 38: CTB vs Frequency and Voltage (155 Flat NTSC Channels; POUT = +30 dbmv/ch) CTB(dBc) Figure 39: CSO vs Frequency and Voltage (155 Flat NTSC Channels; POUT = +30 dbmv/ch) CSO (dbc) -100 Figure 40: XMOD vs Frequency and Voltage (155 Flat NTSC Channels; POUT = +30 dbmv/ch) XMOD (dbc) 13
14 LOW FREQUENCY PERFORMANCE DATA: 5 MHz to 200 MHz V DD 6.8 H 0.01 uf RF IN 1000 pf 10 nh 1 3 ADA pf RF OUT 0.5 pf 2,4 0.5 pf Figure 41: Low Frequency (5 MHz to 200 MHz) Test Application Circuit - S24 Packaged Device (75 Ω terminations) 14
15 Figure 42: Low Frequency Applications (See Figure 20) Input Return Loss vs. Frequency - S24 Packaged (TA = +258 C; VDD = +8 V; 75 V system) 0 Figure 43: Low Frequency Applications (See Figure 20) Gain vs. Frequency - S24 Packaged (TA = +258 C; VDD = +8 V; 75 V system) Input Return loss (db) Gain (db) Figure 44: Low Frequency Applications (See Figure 20) Reverse Isolation vs. Frequency - S24 Packaged (TA = +258 C; VDD = +8 V; 75 V system) 0 Figure 45: Low Frequency Applications (See Figure 20) Output Return Loss vs. Frequency - S24 Packaged (TA = +258 C; VDD = +8 V; 75 V system) Reverse Isolation (db) Output Return loss (db) Figure 46: Low Frequency Applications (See Figure 20) Noise Figure vs. Frequency - S24 Packaged (TA = +25 8C; VDD = +8 V; 75 V system) Noise Figure (db)
16 PACKAGE OUTLINE D C LE E H [0.38]X45 L a A A 2 A 1 GAUGE PLANE [0.076mm] SEATING PLANE e B 1 B S Y M B O L A A1 A2 INCHES MILLIMETERS MIN. MAX. MIN. MAX NOTE NOTES: 1. CONTROLLING DIMENSION: INCHES 2. DIMENSION "D" DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS AND GATE BURRS SHALL NOT EXCEED [0.15mm] PER SIDE. B B 1 C D DIMENSION "E" DOES NOT INCLUDE INTER-LEAD FLASH OR PROTRUSIONS. INTER-LEAD FLASH AND PROTRUSIONS SHALL NOT EXCEED [0.25mm] PER SIDE. 4. LEAD THICKNESS AFTER PLATING TO BE [0.33mm] MAXIMUM. E e BSC 1.27 BSC H L LE a Figure 47: S3 Package Outline - Modified 16 Pin SOIC 16
17 Figure 48: S24 Package Outline - SOT-89 17
18 Ordering Information ORDER NUMBER TEMPERATURE RaNGE ADA10000RS3P1 C to +85 C ADA10000RS24Q1 C to +85 C PaCKaGE DESCRIPTION RoHS Compliant Modified 16 Pin SOIC RoHS Compliant SOT-89 Package COMPONENT PaCKaGING 3,500 piece Tape and Reel 1,000 piece Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) Fax: +1 (908) URL: IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 18
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![Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]](/thumbs/88/115381636.jpg "Features. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]")
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Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:
Features OBSOLETE. DC GHz GHz GHz GHz GHz
v2.71 HMC75ST9 / 75ST9E Typical Applications The HMC75ST9 / HMC75ST9E is an ideal RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio &
CGA-6618 CGA-6618Z Pb
Product Description Sirenza Microdevice s CGA- is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
MMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]
![Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]](/thumbs/94/119028866.jpg "Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]")
Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High
HMC480ST89 / 480ST89E
v2.7 HMCST9 / ST9E Typical Applications The HMCST9 / HMCST9E is an ideal RF/IF gain block & LO or PA driver for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test
HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram
v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single
TGA2806-SM. CATV Linear Amplifier. Key Features. Measured Performance Small Signal Gain (75 Ω) includes balun losses
CATV Linear Amplifier Key Features Frequency Range: 40MHz - 1GHz Gain: 20 db 1.7 db 75 Ω Noise Figure Ultra-Low Distortion: -67dBc ACPR typical Low DC Power Consumption Single Supply Bias:+8V, 380mA 28L
DC to 1000 MHz IF Gain Block ADL5530
DC to MHz IF Gain Block ADL3 FEATURES Fixed gain of 6. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power
HMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22
v.71 HMC59ST9 / 59ST9E Typical Applications The HMC59ST9 / HMC59ST9E is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications
Features. = +25 C, Vcc = 5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Units
v2.717 MMIC AMPLIFIER, 4 - GHz Typical Applications The is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
400 MHz to 4000 MHz Low Noise Amplifier ADL5523
FEATURES Operation from MHz to MHz Noise figure of. db at 9 MHz Requires few external components Integrated active bias control circuit Integrated dc blocking capacitors Adjustable bias for low power applications
HMC478SC70 / 478SC70E v
HMC47SC7 / 47SC7E v2.14 Typical Applications The HMC47SC7(E) is an ideal for: Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
ACA2417: 1218 MHz CATV Push-Pull Driver Amplifier
DATA SHEET ACA2417: 1218 MHz CATV Push-Pull Driver Amplifier Applications DOCSIS and Euro DOCSIS 3.1 (D3.1) compliant downstream RF Pre-amplifier for node + 0 HFC and FTTC/FTTB networks Final stage amplifier
TAT Ω phemt Adjustable Gain RF Amplifier
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block Product Features Gain, return loss and bias externally
GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
TAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block
Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm
v1.314 Typical Applications Features The is ideal for: Test Instrumentation Microwave Radio & VSAT Telecom Infrastructure Military & Space Fiber optics Functional Diagram P1dB Output Power: +27 dbm Psat
DATASHEET ISL Features. Applications. Ordering Information. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier.
ISL55 MMIC Silicon Bipolar Broadband Amplifier NOT RECOMMENDED FOR NEW DESIGNS NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 1-888-INTERSIL or www.intersil.com/tsc DATASHEET FN17 Rev.
MAAM Optical Node RF Amplifier MHz Rev. V3. Features. Functional Schematic. Description. Pin Configuration 3. Ordering Information 1,2
1 Features -8 dbm to +2 dbm Optical Input Range Low Equivalent Input Noise (EIN): 3.2 pa/rthz Single + V Bias 29 db Gain at MHz; 34 db Gain at 1000 MHz 27 db Gain Control Range +24 dbmv/ch Output at 0
HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz
v1.65 Typical Applications The HMC471MSG / HMC471MSGE is a dual RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications
v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage
Gain Control Range db
v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
v2.917 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multipoint Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram High Output IP3: +28 dbm Single
MAAM CATV 75 Ω Push Pull Amplifier MHz Rev. V2. Features. Functional Schematic. Description. Pin Configuration 3
Features 25 db Gain 12 Volts DC Bias Differential Inputs and Outputs Low Distortion Adjustable Bias Current and Gain Control Lead-Free 5 x 7 mm 40-Lead PQFN Package Halogen-Free Green Mold Compound RoHS*
2 GHz to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC7950
Data Sheet FEATURES Output power for db compression (PdB): 6 dbm typical Saturated output power (PSAT): 9. dbm typical Gain: db typical Noise figure:. db typical Output third-order intercept (IP3): 6 dbm
3 OIP3 _ measured with two tones at an output of 9dBm per tone separated by 1 MHz.
Device Features OIP3 = 36.9dBm @ 950 MHz Gain = 17.1 db @ 950 MHz Output P1 = 19.5 dbm @950 MHz CTB = 80.0 dbc @ 300MHz CTO = 64.0 dbc @ 300MHz Patented temperature compensation Lead-free/RoHS-compliant
HMC580ST89 / 580ST89E. Features OBSOLETE. DC GHz GHz GHz. db db db Gain Variation Over Temperature DC GHz 0.
v.71 HMC5ST9 / 5ST9E Typical Applications The HMC5ST9 / HMC5ST9E is ideal forr: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
1 MHz to 2.7 GHz RF Gain Block AD8354
1 MHz to 2.7 GHz RF Gain Block AD834 FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply
SGA-6489 SGA-6489Z Pb
Product Description The SGA-689 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring micron emitters provides high F T and excellent thermal perfomance. The heterojunction
HMC368LP4 / 368LP4E FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs PHEMT MMIC AMP-DOUBLER-AMP, 9-16 GHz OUTPUT. Typical Applications.
v3.5 Typical Applications Microwave Radios & VSAT Fiber Optic Infrastructure Military Communications & Radar Functional Diagram Features Output Power: +15 dbm Wide Input Power Range: to +1 dbm 1 khz SSB
SBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier
Product Description Sirenza Microdevices SBB-89Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
1:2 Single-Ended, Low Cost, Active RF Splitter ADA4304-2
FEATURES Ideal for CATV and terrestrial applications Excellent frequency response.6 GHz, 3 db bandwidth db flatness to. GHz Low noise figure: 4. db Low distortion Composite second order (CSO): 62 dbc Composite
ACA1216: 1218 MHz CATV MMIC Power Doubler
DATA SHEET ACA1216: 1218 MHz CATV MMIC Power Doubler Features 1218 MHz specified performance 12 V MMIC power doubler with 28 db gain Very low distortion Best-in-class input/output match 20 db typical Low
Ultra-linear Mixer with Integrated IF Amp and LO Buffer
CMY212 Datasheet Ultra-linear Mixer with Integrated IF Amp and LO Buffer Description CMY212 is a general purpose down-converter device designed for multiple applications such as cellular and PCS mobile
Application Note. WCDMA IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 0 RELEVANT PRODUCTS AWT6252 AWT6274 AWT6275 AWT6276
Application Note WCDMA IMT/PCS 4 mm x 4 mm Power Amplifier Modules Rev 0 RELEVANT PRODUCTS AWT6252 AWT6274 AWT6275 AWT6276 GENERAL DESCRIPTION The ANADIGICS 4 mm x 4 mm hetero-junction bipolar transistor
HMC454ST89 / 454ST89E
HMC44ST8 / 44ST8E Typical Applications The HMC44ST8 / HMC44ST8E is ideal for applications requiring a high dynamic range amplifi er: GSM, GPRS & EDGE CDMA & W-CDMA CATV/Cable Modem Fixed Wireless & WLL
TAT Ω 5V MHz RF Amplifier
TAT74 Datasheet: Rev D 04-17-17-1 of 8 - Disclaimer: Subject to change without notice TAT74 Absolute Maximum Ratings Parameter Rating Storage Temperature - to 1 C Device Voltage (VDD) +10 V Operation of
1 MHz to 2.7 GHz RF Gain Block AD8354
Data Sheet FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply stable Noise figure: 4.2
HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.
HMCST / STE Typical Applications v2.3 GaAs phemt MMIC LNA, Ohm - 1 MHz Features The HMCST(E) is ideal for: High P1 Output Power: +1 m VHF / UHF Antennas HDTV Receivers CMTS Equipment CATV, Cable Modem
Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1
AVT-53663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-53663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC476SC7 / 476SC7E v4.814 Typical
RLAS0510A. 500 ~ 1000 MHz Super Low Noise Amplifier 1. Key Features: Absolute Maximum Ratings 3 : Electrical Specifications: (at room temperature)
5 ~ MHz Super Low Noise Amplifier 1 RLAS5A is an ultra low noise figure, wideband, and unconditionally stable SMT packaged amplifier with exceptionally low input and output VSWR. The amplifier offers a
Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
HMC454ST89 / 454ST89E
HMC44ST8 / 44ST8E Typical Applications The HMC44ST8 / HMC44ST8E is ideal for applications requiring a high dynamic range amplifi er: GSM, GPRS & EDGE CDMA & W-CDMA CATV/Cable Modem Fixed Wireless & WLL
HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
MAAL Low Noise Amplifier GHz. Features. Functional Block Diagram. Description. Pin Configuration 1. Ordering Information 2,3 N/C
MAAL-4.1-3. GHz Features Single Voltage Supply 3V ~ V Integrated Active Bias Circuit Adjustable Current with an External Resistor Low Noise Figure High Linearity OIP3, 34 dbm @ 2 GHz Broadband Match Integrated
Pin (dbm ) Ceramic Micro-X Gigamite Plastic
This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable
Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
LF to 4 GHz High Linearity Y-Mixer ADL5350
LF to GHz High Linearity Y-Mixer ADL535 FEATURES Broadband radio frequency (RF), intermediate frequency (IF), and local oscillator (LO) ports Conversion loss:. db Noise figure:.5 db High input IP3: 25
Features. = +25 C, Vdd= +3V. Parameter Min. Typ. Max. Units Frequency Range GHz Gain db
7 Typical Applications The HMC286 / HMC286E is ideal for: BlueTooth Home RF 82.11 WLAN Radios PCMCIA Platforms Functional Diagram v3.41 Features 2.4 GHz LNA Noise Figure: 1.7 db Gain: 19 db Single Supply: