AWT6280 Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control AWT6280R

Transcription

1 FEATURES Internal Reference Voltage Integrated Control Scheme InGaP HBT Technology ESD Protection on All Pins (2.5 kv) Low profile 1.0 mm Small Package Outline 7 mm x 7 mm EGPRS Capable (class 12) RoHS Compliant Package, 250 o C MSL3 AWT6280 Quadband GSM/GPRS/Polar EDGE Amplifier Module with Integrated Control AWT6280R Data Sheet Rev 2.0 GMSK MODE Integrated power control (CMOS) +35 GSM850/900 Output +33 DCS/PCS Output 55 % GSM850/900 PAE 52 % DCS/PCS PAE control range > 50 db EDGE MODE +29 GSM850/900 Output DCS/PCS Output 29 % GSM850/900 PAE 30 % DCS/PCS PAE 64 db Typical ACPR (400 khz) 74 db Typical ACPR (600 khz) M11 Package 18 Pin 7 mm x 7 mm x 1.0 mm Surface Mount Module APPLICATIONS Dual/Tri/Quad Band Handsets and PDAs Dual/Tri/Quad Band Wireless Data Cards PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8PSK modulation schemes using an open loop polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. Each amplification chain is optimized for excellent EDGE efficiency, power, and linearity in a Polar loop environment while maintaining high efficiency in the GSM/GPRS mode. The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8PSK operation. This facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifier s power control range is typically 55 db, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are DC blocked and internally matched to 50 Ω. DCS/PCS_IN GSM850/900_IN BS TX_EN VBATT CEXT VRAMP DCS/PCS GSM850/900 Bias/ Control Figure 1: Block Diagram DCS/PCS_OUT GSM850/900_OUT

2 AWT6280 DCS/PCS_IN DCS/PCS_OUT BS 2 15 T X_EN 3 14 VBATT 4 13 N/C CEXT VRAMP GSM_IN GSM_OUT Figure 2: Pinout (X ray Top View) Table 1: Pin Description NAME DESCRIPTION NAME DESCRIPTION 1 DCS/PCS_IN 2 BS 3 TX_EN DCS/PCS RF Inpu t 10 GSM_OUT Band Select Logic Inpu t 11 TX Enable Logic Inpu t 12 GSM850/900 RF Output Ground Ground 4 VBATT Battery Supply Connection 13 N/ C No Connection. Do not ground 5 CEXT Bypass 14 Ground 6 VRAMP Analog Signal used to control the output power 15 Ground 7 GSM_IN 8 9 GSM850/900 RF Inpu t 16 DCS/PCS_OUT Ground 17 Ground 18 DCS/PCS RF Output Ground Ground 2 Data Sheet Rev 2.0

3 ELECTRICAL CHARACTERISTICS AWT6280 Table 2: Absolute Maximum Ratings UNITS Supply Voltage ( VB ATT) + 7 V RF ( RFI N) 11 Control Voltage ( VR AMP) V Storage Temperature ( TS TG) C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. DCS/PCS_IN >+2500 V <2500 V DCS/PCS_OUT >+2500 V <2500 V BS >+2500 V <2500 V 2 15 TX_EN >+2500 V <2500 V 3 14 VBATT >+2500 V <2500 V 4 13 N/C CEXT >+2500 V <2500 V 5 12 VRAMP >+2500 V <2500 V 6 11 GSM_IN >+2500 V <2500 V GSM_OUT >+2500 V <2500 V Figure 3: ESD Pin Rating ELECTROSTATIC DISCHARGE SENSITIVITY The AWT6280 part was tested to determine the ESD sensitivity of each package pin with respect to ground. All the package pins were subjected to an ESD pulse event using the Human Body Model outlined in JESD22A114C.01 in either polarity with respect to ground. The pre and post test IV characteristics of each pin are recorded. The ratings on each pin require that it sustain the ESD event and show no degradation. Data Sheet Rev 2.0 3

4 Table 3: Operating Conditions UNITS Case temperature ( TC) C Supply voltage ( VB ATT) V supply leakage current 1 10 µa Control Voltage Range V Turn on Time ( T N O ) 1 µs Turn Off Time ( TO FF) 1 µs VBATT 4.8 V, V TX_EN = LOW No RF applied = R AMP = 0 V, The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. V RAMP V RAMP = 0.2 V, TX_EN = LOW Y HIGH = 5 db = 0.2 V, TX_EN = LOW Y HIGH = 5 db Rise Time ( TR ISE) 1 µs POUT = 10 Y P AX (within 0.2 db Fall Time ( TF ALL) 1 µs POUT V V RAMP RAMP Capacitance 3 pf Current 10 µa Duty Cycle 50 % M ) = P Y 10 (within 0.2 db) Table 4: Digital s SYMBOL UNITS Logic Logic Logic Logic High Voltage Low Voltage High Current Low Current VH I. 2 VL V I 0. 5 V IIH 30 µa IIL 30 µa Table 5: Logic Control Table OPERATIONAL MODE BS TX_EN GSM850/900 DCS/PCS LOW HIGH HIGH HIGH PA DISABLED LOW 4 Data Sheet Rev 2.0

5 Table 6: Electrical Characteristics for GSM850 GMSK mode Unless otherwise specified: VBATT = 3.5 V, = 3.0, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH UNIT O perating Frequency ( FI N ) MHz (PI N) Output (PM AX) Freq = 824 to 849 MHz Degraded ( ) Output V BATT = 3.0 V, TC = 85 C = 0 P % Freq = 824 to 849 MHz Forward Isolation Forward Isolation TX_EN = 0 V, PI N TX_EN = HIGH,V = 5 = 5 R AMP = 0.2 V Cross Isolation ( 2Fo, DCS/PCS port) < 34.5 Second Harmonic < 34.5 Third Harmonic < 34.5 n * fo (n > 4), Fo Stability < 34.5 VSWR = 6:1 All Phases, < FOUT < 1 30 FOUT > 1 Ruggedness No Permanent Degradation VSWR 10:1, All Phase Angles < 34.5 RX Noise FT X = 849 MHz, RBW = 100 khz, FRX = 869 to 894 MHz, P UT O < 34.5 Return Loss 1.5: 1 2.5: 1 VSWR < 34.5 Data Sheet Rev 2.0 5

6 Table 7: Electrical Characteristics for GSM850 8PSK mode Unless otherwise specified: VBATT = 3.5 V, = 3.0, Pulse Width =1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 C, BS = LOW, TX_EN = HIGH UNIT O perating Frequency ( FI N ) MHz PAE % FIN OUT P = 824 to 849 MHz set = +29 ACPR 200 khz 400 khz 600 khz 1800 khz dbc/100 khz All conditions under Polar operation POUT = +29 EVM 1 5 % All Conditions under Polar operation POUT = Data Sheet Rev 2.0

7 Table 8: Electrical Characteristics for GSM900 GMSK mode Unless otherwise specified: VBATT = 3.5 V, = 3.0, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH UNIT O perating Frequency ( FI N ) MHz (PI N) Output (PM AX) Freq = 880 to 915 MHz Degraded ( ) Output V BATT = 3.0 V, TC = 85 C = 0 P % Freq = 880 to 915 MHz Forward Isolation Forward Isolation TX_EN = 0 V, PI N TX_EN = HIGH,V = 5 = 5 R AMP = 0.2 V Cross Isolation ( 2Fo, DCS/PCS port) < 34.5 Second Harmonic < 34.5 Third Harmonic < 34.5 n * fo (n > 4), Fo Stability 29 8 < 34.5 VSWR = 6:1 All Phases, < FOUT < 1 30 FOUT > 1 Ruggedness RX Noise No Permanent Degradation VSWR 10:1, All Phase Angles < 34.5 FT X = 915 MHz, RBW = 100 khz, FRX = 925 to 935 MHz, P UT O < 34.5 FT X = 915 MHz, RBW = 100 khz, FRX = 935 to 960 MHz, P UT O < 34.5 Return Loss 1.5: 1 2.5: 1 VSWR < 34.5 Data Sheet Rev 2.0 7

8 Table 9: Electrical Characteristics for GSM900 8PSK mode Unless otherwise specified: VBATT = 3.5 V, = 3.0, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 C, BS =HIGH, TX_EN = HIGH UNIT O perating Frequency ( FI N ) MHz PAE % FIN OUT P = 880 to 915 MHz set = +29 ACPR 200 khz 400 khz 600 khz 1800 khz dbc/100 khz All conditions under Polar operation POUT = +29 EVM 1 5 % All Conditions under Polar operation POUT = Data Sheet Rev 2.0

9 Table 10: Electrical Characteristics for DCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, = 3.0, VRAMP = 1.6 V, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 C, BS =HIGH, TX_EN = HIGH UNIT O perating Frequency ( FI N ) MHz (PI N) Output (PM AX) Freq = 1710 to1785 MHz Degraded ( ) Output V BATT = 3.0 V, TC = 85 C = 0 P % Freq = 1710 to1785 MHz Forward Isolation Forward Isolation TX_EN = 0 V, PI N TX_EN = HIGH,V = 5 = 5 R AMP = 0.2 V Second Harmonic < 32.0 Third Harmonic < 32.0 n * fo (n > 4), Fo Stability < 32.0 VSWR = 6:1 All Phases, < FOUT < 1 30 FOUT > 1 Ruggedness No Permanent Degradation VSWR 10:1, All Phase Angles < 32.0 RX Noise FT X = 1785 MHz, RBW = 100 khz, FRX = 1805 to1880 MHz, P UT O < 32.0 Return Loss 1.5: 1 2.5: 1 VSWR < 32.0 Data Sheet Rev 2.0 9

10 Table 11: Electrical Characteristics for DCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, = 3.0, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 C, BS =HIGH, TX_EN = HIGH UNIT O perating Frequency ( FI N ) MHz PAE % FIN OUT P = 1710 to 1785 MHz set = ACPR 200 khz 400 khz 600 khz 1800 khz dbc/100 khz All conditions under Polar operation POUT = EVM 1 5 % All Conditions under Polar operation POUT = Data Sheet Rev 2.0

11 Table 12: Electrical Characteristics for PCS GMSK mode Unless otherwise specified: VBATT = 3.5 V, = 3.0, VRAMP = 1.6 V, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 C, BS =HIGH, TX_EN = HIGH UNIT O perating Frequency ( FI N ) MHz (PI N) Output (PM AX) Freq = 1850 to1910 MHz Degraded ( ) Output V BATT = 3.0 V, TC = 85 C = 0 P % Freq = 1850 to1910 MHz Forward Isolation Forward Isolation TX_EN = 0 V, PI N TX_EN = HIGH,V = 5 = 5 R AMP = 0.2 V Second Harmonic < 32.0 Third Harmonic < 32.0 n * fo (n > 4), Fo Stability < 32.0 VSWR = 6:1 All Phases, < FOUT < 1 30 FOUT > 1 Ruggedness No Permanent Degradation VSWR 10:1, All Phase Angles < 32.0 RX Noise FT X = 1910 MHz, RBW = 100 khz, FRX = 1930 to1990 MHz, P UT O < 32.0 Return Loss 1.5: 1 2.5: 1 VSWR < 32.0 Data Sheet Rev

12 Table 13: Electrical Characteristics for PCS 8PSK mode Unless otherwise specified: VBATT = 3.5 V, = 3.0, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 C, BS =HIGH, TX_EN = HIGH UNIT O perating Frequency ( FI N ) MHz PAE % FIN OUT P = 1850 to 1910 MHz set = ACPR 200 khz 400 khz 600 khz 1800 khz dbc/100 khz All conditions under Polar operation POUT = EVM 1 5 % All Conditions under Polar operation POUT = Data Sheet Rev 2.0

13 APPLICATION INFORMATION AWT BAND SELECT TX ENABLE BATTERY VOLTAGE DAC OUTPUT DCS/PCS RF INPUT 47uF ++ 1nF ++ 1nF pF ** 22nF ** 2.2k * 68pF* GSM850/900 RF INPUT DCS/PCS_IN BS TX_EN VBATT CEXT VRAMP GSM_IN AWT6280 DCS/PCS_OUT N/C GSM_OUT *** X ASM or FEM 8 9 * Component values depends on baseband chipset used. ** This component should be placed as close to the device pin as possible. *** No Connection. Do not ground. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. Figure 4: Recommended Application Circuit Data Sheet Rev

14 PACKAGE OUTLINE Figure 5: M11 Package Outline 18 Pin 7 mm x 7 mm x 1.0 mm Surface Mount Module Figure 6: Branding Specification 14 Data Sheet Rev 2.0

15 Figure 7: Recommended PCB Layout Information Data Sheet Rev

16 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWT6280RM11P8 20 C to +85 C RoHScompliant 18 Pin 7 mm x 7 mm x 1.0 mm Surface Mount Module Tape and Reel, 2500 pieces per reel AWT6280RM11P9 20 C to +85 C RoHScompliant 18 Pin 7 mm x 7 mm x 1.0 mm Surface Mount Module Partial Tape and Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) Fax: +1 (908) URL: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 16 Data Sheet Rev 2.0