AWT6521 Multi-Band CDMA/WCDMA/HSPA Power Amplifier PRELIMINARY DATA SHEET - Rev 1.1
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1 FEATURES WCDMA/HSPA & CDMA/EVDO Application High Output Power or more in WCDMA (R99) dbm or more in CDMA (RC1) High poweradded efficiency 40% in high power mode (WCDMA mode) Low profile 5 mm x 7 mm x 1 mm package 2 input ports, 5 output ports, all matched to 50 Ω impedance Integrated voltage regulator Builtin Directional Coupler Low leakage in shutdown mode ESD Protection on all pins RoHScompliant package, MSL3, 260 C APPLICATIONS WCDMA/HSPA handsets and data devices operating in UMTS Bands 1, 2, 4, 5 and 8 CDMA/EVDO handsets and data devices operating in Band Class 0, 1, 6 and 15 AWT6521 MultiBand CDMA/WCDMA/HSPA Power Amplifier PRELIMINARY DATA SHEET Rev 1.1 AWT6521 M48 Package 22 Pin 5 mm x 7 mm x 1 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6521 Power Amplifier module is designed for 3G handsets, smartphones, modems and modules operating in WCDMA/HSPA and CDMA/EVDO modes. The module includes two separate InGaP HBT amplifier chains one to support 850/900 bands, the other for 1700/1900/2100MHz bands. An innovative design allows the module to switch output among as many as 5 different frequency bands. Both the input and output RF ports are internally matched to 50 Ω. The AWT6521 incorporates ANADIGICS technology for improved efficiency and low quiescent current, and includes integrated daisy chained couplers to simplify board design and layout. High Band Low Band Combiner Network Figure 1: Block Diagram
2 RFIN_HI 1 22 RFOUT_ RFOUT_1700 VBATT 3 20 RFOUT_1900 VEN_HI CPLOUT VBAND VCC VBAND VCC 8 15 VCC VEN_LO RFOUT_850 RFIN_LO RFOUT_900 Figure 2: Pinout (Xray Top View) Table 1: Pin Description PIN NAME DESCRIPTION PIN NAME DESCRIPTION 1 RFIN_HI RF input for 1700/1800/1900 MHz Bands 12 RFOUT_900 RF Output for 900 MHz Band 2 Ground 13 RFOUT_850 3 VBATT Battery Voltage 14 Ground 4 VEN_HI Enable Voltage for High Bands 2 PRELIMINARY DATA SHEET Rev 1.1 RF Output for 850 MHz Band 15 VCC Supply Voltage 5 Ground 16 VCC Supply Voltage 6 VBAND0 Low Band Select Voltage 17 VCC Supply Voltage 7 VBAND1 High Band Select Voltage 18 CPL_OUT Coupler Output Port 8 Mode Control Voltage 19 Ground 9 VEN_LO Enable Voltage for Low Bands 20 RFOUT_ Ground 21 RFOUT_ RFIN_LO RF input for 850/900 MHz Bands 22 RFOUT_2100 RF Output for 1900 MHz Band RF Output for 1700 MHz Band RF Output for 2100 MHz Band
3 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VBATT, VCC) 0 +5 V Control voltages (, VBAND0/1 ) V Enable voltages ( VEN_HI/Lo ) V Input RF power RF_IN +10 dbm Storage temperature C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. PRELIMINARY DATA SHEET Rev 1.1 3
4 Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (f) MHz UMTS Band 5, BC 0 UMTS Band 8 UMTS Band 4, BC 15 UMTS Band 2, BC 1 UMTS Band 1, BC 6 Supply Voltage (VBATT, VCC) V Control voltages (, VBAND0/1 ) V Select High State Select Low State Enable Voltage (VEN_HI/Lo) V Select High State Select Low State WCDMA Output Power (UMTS) R99, HPM HSPA (MPR=0), HPM R99, LPM HSPA (MPR=0), LPM R99, HPM HSPA (MPR=0), HPM R99, LPM HSPA (MPR=0), LPM R99, HPM HSPA (MPR=0), HPM R99, LPM HSPA (MPR=0), LPM (1) (1) (1) (1) (1) (1) (1) (1) (1) (1) (1) (1) dbm UMTS Band 1, 4, 5 UMTS Band 1, 4, 5 UMTS Band 1, 4, 5 UMTS Band 1, 4, 5 UMTS Band 2 UMTS Band 2 UMTS Band 2 UMTS Band 2 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 CDMA Output Power CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM (1) (1) (1) (1) (1) (1) dbm Band Class 6, 15 Band Class 0 Band Class 1 Case Temperature (TC) C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operations at 3.2 V and 105 8C, POUT is derated by 0.5 db. 4 PRELIMINARY DATA SHEET Rev 1.1
5 Table 4: Electrical Specifications Band 1 (2100 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = +, VBAND0 = VBAND1 =, VEN_LO = ) AWT6521 PARAMETER MIN TYP MAX UNIT COMMENTS POUT Gain db ACLR1 at 5 MHz offset (1) ACLR2 at 10 MHz offset 55 < PowerAdded Efficiency (1) 39 8 % Mode Control Current < ma through pin, = + Enable Current < ma through VENABLE H or L BAND Control Current < ma through VBAND0 and VBAND1 pins Quiesent Current 30 ma = BATT Current 45 ma through VBATT pin, = + Leakage Current <8 12 µa VBATT = VCC = +4.3 V, Shutdown Mode Noise in Receive Band (2) POUT <, = POUT <, = + Harmonics 2fo 3fo, 4fo Input Impedance 2:1 VSWR Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure 70 See note 3. 8:1 VSWR Applies over full operating range Coupling Factor 26.5 db CDMA2000 (RC1) Waveform POUT Adjacent Channel Power at MHz offset dbm Alternate Channel Power at MHz offset Notes: (1) ACLR and Efficiency measured at 1950 MHz. (2) Noise measured at 2110 to 2170 MHz. (3) POUT < ; Inband load VSWR < 5:1; Outofband load VSWR < 10:1; Applies over all operating conditions PRELIMINARY DATA SHEET Rev dbm 5
6 Table 5: Electrical Specifications Band 2 (1900 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = +, VBAND0 =, VEN_LO = ) PARAMETER MIN TYP MAX UNIT POUT COMMENTS Gain db +29 dbm ACLR1 at 5 MHz offset (1) dbm ACLR2 at 10 MHz offset 53 < dbm PowerAdded Efficiency (1) 39 8 % +29 dbm Mode Control Current < ma through pins, = + Enable Current < ma through VENABLE H or L BAND Control Current <0.1 ma Quiescent Current 30 ma = BATT Current 45 ma through VBATT pin, = + Leakage Current <8 12 µa VBATT = +4.2 V, VCC = +4.2 V, VEN_HI = VEN_LO = VBAND0 = VBAND1 = Noise in Receive Band (2) POUT = +29 dbm, = POUT =, = Harmonics 2fo 3fo, 4fo Input Impedance 2:1 VSWR Spurious Output Level (all spurious outputs) 70 POUT < +29 dbm Inband load VSWR < 5:1 Outofband load VSWR < 10:1 Applies over all operating conditions Load mismatch stress with no permanent degradation or failure 8:1 VSWR Applies over full operating range Coupling factor 27.5 db CDMA2000 (RC1) Waveform POUT Adjacent Channel Power (1) at MHz offset dbm Alternate Channel Power (1) at MHz offset Notes: (1) ACLR and Efficiency measured at 1880 MHz. (2) 1930 MHz to 1990 MHz. 6 PRELIMINARY DATA SHEET Rev dbm
7 Table 6: Electrical Specifications Band 4 (1700 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND0 = +, VBAND1 =, VEN_LO = ) AWT6521 PARAMETER MIN TYP MAX UNIT COMMENTS POUT Gain db + ACLR1 at 5 MHz offset (1) ACLR2 at 10 MHz offset PowerAdded Efficiency (1) (without DC/DC Converter) 40 8 % + Mode Control Current < ma through pin, = + Enable Current < ma through VENABLE H or L BAND Control Current <0.1 ma Quiescent Current 35 ma = BATT Current 45 ma through VBATT pin, = + Leakage Current <7 12 µa VBATT = +4.2 V, VCC = +4.2 V, VEN_HI = VEN_LO = VBAND0 = VBAND1 = Noise in Receive Band MHz to 2155 MHz MHz to MHz Harmonics 2fo 3fo, 4fo POUT < Input Impedance 2:1 VSWR Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure 70 See note 2. 8:1 VSWR Applies over full operating range Coupling factor 27 db CDMA2000 (RC1) Waveform POUT Adjacent Channel Power (1) at MHz offset dbm Alternate Channel Power (1) at MHz offset Notes: (1) ACLR and Efficiency measured at MHz. 2. POUT < ; Inband load VSWR < 5:1; Outofband load VSWR < 10:1; Applies over all operating conditions. PRELIMINARY DATA SHEET Rev dbm 7
8 Table 7: Electrical Specifications Band 5 (850 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI =, VBAND1 = VBAND0 = +, VEN_LO = ) PARAMETER MIN TYP MAX UNIT COMMENTS POUT Gain db ACLR1 at 5 MHz offset (1) ACLR2 at 10 MHz offset 57 < PowerAdded Efficiency (1) % Mode Control Current <0.1 ma through pin, = + Enable Current <0.1 ma through VENABLE pin H or L BAND Control Current <0.1 ma Quiescent Current 30 ma = BATT Current 18 ma through VBATT pin, = + Leakage Current <7 12 µa VBATT = +4.2 V, VCC = +4.2 V, Shutdown Mode Noise in Receive Band (2) POUT =, =, POUT =, = + Harmonics 2fo 3fo, 4fo POUT < Input Impedance 2:1 VSWR Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure 70 See Note 3 8:1 VSWR Applies over full operating range Coupling Factor 27 db CDMA2000 (RC1) Waveform POUT Adjacent Channel Power at khz offset dbm Alternate Channel Power at MHz offset Notes: (1) ACLR and Efficiency measured at MHz. (2) 869 MHz to 894 MHz. (3) POUT <, Inband load VSWR < 5:1, Outofband load VSWR < 10:1. Applies over all operating conditions. 8 PRELIMINARY DATA SHEET Rev dbm
9 Table 8: Electrical Specifications Band 8 (900 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = VBAND0 =,VEN_LO = ) AWT6521 PARAMETER MIN TYP MAX UNIT POUT COMMENTS Gain db dbm ACLR1 at 5 MHz offset (1) dbm ACLR2 at 10 MHz offset 56 < dbm PowerAdded Efficiency (1) 39 9 % dbm Mode Control Current <0.1 ma through pin, = + Enable Current <0.1 ma through VENABLE H or L Quiescent Current 30 ma = BAND Control Current <0.1 ma BATT Current 20 ma through VBATT pin, = + Leakage Current <7 12 µa VBATT = +4.3 V, VCC = +4.3 V, Shutdown Mode Noise in Receive Band (2) POUT = dbm, = POUT =, = + Harmonics 2fo 3fo, 4fo POUT < dbm Input Impedance 2:1 VSWR Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure 70 See note 3. 8:1 VSWR Applies over full operating range Coupling Factor 27.0 db Notes: (1) ACLR and Efficiency measured at MHz. (2) 925 MHz to 960 MHz. 3. POUT < dbm, Inband load VSWR < 5:1, Outofband load VSWR < 10:1. Applies over all operating conditions. PRELIMINARY DATA SHEET Rev 1.1 9
10 LOGIC PROGRAMMING Table 9 : Logic Interface Specifications MODE OF OPERATION VEN_HI VEN_LO VBANDBAND1 UMTS Band 1, CDMA BC 6 High Low Low Low X UMTS Band 2, CDMA BC 1 High Low Low High X UMTS Band 4, CDMA BC 15 High Low High Low X UMTS Band 5, CDMA BC 0 Low High High High X UMTS Band 8 Low High Low Low X Standby Mode Low Low X X X Shutdown Mode Low Low Low Low X High Power Mode (HPM) X X X X Low Low Power Mode (LPM) X X X X High APPLICATION INFORMATION AWT6521 BATT C1 68pF RFIN_HI VBATT VEN_HI VBAND0 VBAND1 RFOUT_2100 RFOUT_1700 RFOUT_1900 CPLOUT VCC VCC C2 C3 C2 BATT VEN_LO VCC RFOUT_ pF.1 uf 2.2u F 11 RFIN_LO RFOUT_ SLUG Figure 3 : Application Schematic 10 PRELIMINARY DATA SHEET Rev 1.1
11 PACKAGE OUTLINE Figure 3: M48 Package Outline 22 Pin 5 mm x 7 mm x 1 mm Surface Mount Module Pin 1 Identifier Part Number Date Code YY= Year WW= Work Week AWT6521R LLLLLNN YYWWCC ANADIGICS logo Lot Number Country Code (CC) Figure 4 : Branding Specification PRELIMINARY DATA SHEET Rev
12 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWT6521RM48P8 30 o C to +105 o C RoHS Compliant 22 Pin 5 mm x 7 mm x 1 mm Surface Mount Module Tape and Reel, 2500 pieces per Reel AWT6521RM48P9 30 o C to +105 o C RoHS Compliant 22 Pin 5 mm x 7 mm x 1 mm Surface Mount Module Partial Tape and Reel ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) Fax: +1 (908) URL: IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 PRELIMINARY DATA SHEET Rev 1.1
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