MUR820, RURP820. Features. 8A, 200V Ultrafast Diodes. Applications. Ordering Information. Packaging. Symbol K. File Number
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1 MUR2, RURP2 Data Sheet January 2 File Number A, 2V Ultrafast Diodes MUR2 and RURP2 are ultrafast diodes with soft recovery characteristics ( < 25ns). They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA9223. Ordering Information PART NUMBER PACKAGE BRAND MUR2 TO-22AC MUR2 RURP2 TO-22AC RURP2 NOTE: When ordering, use the entire part number. Symbol K Features Ultrafast with Soft Recovery <25ns Operating Temperature o C Reverse Voltage V Avalanche Energy Rated Planar Construction Applications Switching Power Supplies Power Switching Circuits General Purpose Packaging CATHODE (FLANGE) JEDEC TO-22AC ANODE CATHODE A Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified MUR2 RURP2 Peak Repetitive Reverse Voltage V RRM 2 V Working Peak Reverse Voltage V RWM 2 V DC Blocking Voltage V R 2 V Average Rectified Forward Current I F(AV) A (T C = 157 o C) Repetitive Peak Surge Current I FRM 16 A (Square Wave, 2kHz) Nonrepetitive Peak Surge Current I FSM 1 A (Halfwave, 1 Phase, 6Hz) Maximum Power Dissipation P D 5 W Avalanche Energy (See Figures 1 and 11) E AVL 2 mj Operating and Storage Temperature T STG, T J -65 to 175 o C UNITS 21 Fairchild Semiconductor Corporation MUR2, RURP2 Rev. A
2 MUR2, RURP2 Electrical Specifications T C = 25 o C, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX UNITS V F I F = A V I F = A, T C = 15 o C V I R V R = 2V µa V R = 2V, T C = 15 o C µa I F = 1A, di F /dt = 2A/µs ns I F = A, di F /dt = 2A/µs ns I F = A, di F /dt = 2A/µs ns I F = A, di F /dt = 2A/µs ns Q RR I F = A, di F /dt = 2A/µs nc C J V R = 1V, I F = A pf R θjc o C/W DEFINITIONS V F = Instantaneous forward voltage (pw = 3µs, D = 2%). I R = Instantaneous reverse current. = Reverse recovery time (See Figure 9), summation of +. = Time to reach peak reverse current (See Figure 9). = Time from peak I RM to projected zero crossing of I RM based on a straight line from peak I RM through 25% of I RM (See Figure 9). Q RR = Reverse recovery charge. C J = Junction Capacitance. R θjc = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves o C o C 175 o C 25 o C I R, REVERSE CURRENT (µa) o C 25 o C V F, FORWARD VOLTAGE (V) V R, REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 21 Fairchild Semiconductor Corporation MUR2, RURP2 Rev. A
3 MUR2, RURP2 Typical Performance Curves (Continued) t, RECOVERY TIMES (ns) T C = 25 o C, di F /dt = 2A/µs t, RECOVERY TIMES (ns) T C = 1 o C, di F /dt = 2A/µs FIGURE 3., AND CURVES vs FORWARD CURRENT FIGURE 4., AND CURVES vs FORWARD CURRENT t, RECOVERY TIMES (ns) T C = 175 o C, di F /dt = 2A/µs 1 4 I F(AV), AVERAGE FORWARD CURRENT (A) DC 6 SQ. WAVE T C, CASE TEMPERATURE ( o C) FIGURE 5., AND CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 15 C J, JUNCTION CAPACITANCE (pf) V R, REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 21 Fairchild Semiconductor Corporation MUR2, RURP2 Rev. A
4 MUR2, RURP2 Test Circuits and Waveforms V GE AMPLITUDE AND R G CONTROL di F /dt t 1 AND t 2 CONTROL I F L V GE t 1 R G DUT IGBT CURRENT SENSE + V DD - I F di F dt t 2.25 I RM I RM FIGURE. TEST CIRCUIT FIGURE 9. WAVEFORMS AND DEFINITIONS I = 1A L = 4mH R <.1Ω E AVL = 1/2LI 2 [V R(AVL) /(V R(AVL) - V DD )] Q 1 = IGBT (BV CES > DUT V R(AVL) ) L R V AVL Q 1 CURRENT SENSE + V DD I V I L I L V DD DUT - t t 1 t 2 t FIGURE 1. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS 21 Fairchild Semiconductor Corporation MUR2, RURP2 Rev. A
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