MICROWAVE SILICON COMPONENTS

Transcription

1 MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS INTRODUCTION / SYMBOLS PIN DIODES SCHOTTKY DIODES TUNING VARACTORS DIODES POWER GENERATION DIODES MOS CAPACITORS CASE STYLES 1-1

2 MICROWAVE SILICON COMPONENTS Introduction INTRODUCTION This part of the Microwave section presents TEKELEC TEMEX s product lines including: receiving diodes control diodes tuning varactors multiplier varactors step recovery diodes high voltage PIN diodes TEKELEC TEMEX s products are available in a complete assortment of packages including: chips standard surface mount ceramic and plastic non magnetic custom IN-HOUSE PRODUCTION The silicon slice is the in-house starting point of TEKELEC TEMEX s product manufacturing. From the virgin wafer, TEKELEC TEMEX performs all functions, including: epitaxy diffusion photomasking metallization passivation dicing packaging control and burn-in TEKELEC TEMEX uses and controls ten separate silicon-related technologies, e.g. all Schottky metallurgies, all junction passivations, and all mesa operations. 1-2

3 MICROWAVE SILICON COMPONENTS Symbols SYMBOLS C b Case Capacitance C j Junction Capacitance C T Total Capacitance C X /C y Tuning Ratio f Test Frequency F CO Cut-off Frequency F I Frequency Input F IF Intermediate Frequency F O Output Frequency F oper Operating frequency I F Forward Continuous Current I R Reverse Continuous Current I RP Reverse Pulse Current L Conversion Loss N/A Not Applicable NF SSB Single Sideband Noise Figure NF IF Noise Figure of Intermediate Frequency Gold Contact Diameter P CW CW Power Capability P diss Power Dissipation P in Power Input P L Limiting Threshold P LO Local Oscillator Power P O Output Power P RF RF Power Q -X Figure of Merit R SF Forward Series Resistance R th Thermal Resistance R V Video Resistance τ I Minority Carrier Lifetime T CR Reverse Switching Time T j Junction Temperature t SO Snap-off Time T SS Tangential Sensitivity V BR Breakdown Voltage V F Forward Continuous Voltage V R Applicable Voltage (RF + bias) VSWR Voltage Standing Wave Ratio V T Forward Threshold Voltage V TO Threshold Voltage Z IF Impedance at Intermediate Frequency Z O Output Impedance 1-3

4 SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide SURFACE MOUNT PACKAGE PLASTIC PACKAGE SWITCHING SILICON PIN DIODES PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES SQUARE SURFACE MOUNT PIN DIODES HIGH VOLTAGE SQUARE SURFACE MOUNT PIN DIODES NON MAGNETIC SQUARE SURFACE MOUNT PIN DIODES HIGH VOLTAGE PIN DIODES SWITCHING & PHASE SHIFTING APPLICATIONS TWO AND THREE PORTS RF PIN SWITCH MODULES MICROWAVE APPLICATIONS ULTRAFAST SWITCHING SILICON PIN DIODES FAST SWITCHING SILICON PIN DIODES ATTENUATOR SILICON PIN DIODES SILICON LIMITER PIN DIODES 1-4

5 SILICON PIN DIODES How to specify a PIN diode HOW TO SPECIFY A PIN DIODE To obtain the PIN diodes best suited for a specific application, consider the following: 1. Application switch attenuator limiter 2. Frequency and bandwidth requirements 3. Power characteristics peak average pulse duration and duty cycle 4. Switching time 5. Bias conditions forward reverse 6. Circuit impedance 7. Shunt or series assembly 8. Maximum loss expected 9. Minimum isolation needed 10. VSWR and distortion requirements 11. Power applied to the diode forward biased reverse biased during switching 12. Static characteristics applicable voltage: V R total capacitance: C T (in space charge) forward series resistance: R SF carrier lifetime τl thermal resistance: R th 13. Mechanical and packaging constraints 1-5

6 SILICON PIN DIODES SOT23 surface mount switching silicon PIN diodes SOT23 SURFACE MOUNT SWITCHING SILICON PIN DIODES Features Low series resistance Low capacitance Fast switching diodes Surface mount package Tape and reel packaging available Description TEKELEC TEMEX uses its pro p r i e t a ry technology to manufacture its Silicon PIN diodes in SOT23. This product family is designed for a low cost, medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. The use of this technology eliminates wire bonding directly on to the chips. Outline drawing Applications The DH50XXX series PIN diodes are offered in large selection of capacitance range (.30 pf to 1.2 pf) and breakdown voltage (35 V to 200 V). They provide low loss (low series resistance), low switching time and low switching current. TEKELEC TEMEX s components are designed to cover a broad range of CW low power (up to 2 W), medium peak power, RF and microwave applications (up to 3GHz). Main applications include: SPST and SPDT switches, antenna (Wi reless Communication Systems) and filter switches, Phase Shifters Note: To reduce the distortion, it is necessary to verify and design with the following formula : Î HF << 1 πτ l I DC F (Top view) Nota: Other plastic packages available. Î HF : RF peak current (A) τ l : Diode minority carrier lifetime(s) I DC : DC bias current (A) F : Application frequency (Hz) 1-6

7 SILICON PIN DIODES SOT23 surface mount switching silicon PIN diodes Electrical characteristics at 25 C PACKAGED DIODES Breakdown Total Series Minority Carrier Voltage capacitance Resistance lifetime V (1) BR C (2) T R SF τ I Test conditions I R = 10 µa F = 1 MHz I F = 10 ma I F = 10 ma V R = 50 V F = 120 MHz I R = 6 ma Type (3) V pf Ω ns min max max typ. DH50051-XX (5) 2.5 (4) 150 DH50058-XX 35 1 (5) DH50053-XX (6) DH50103-XX DH50109-XX DH50203-XX (1) : Other breakdown value on request (4) : R SF at I F = 5 ma (2) : other capacitance values on request (5) : V R = 5 V at F = 1 MHz (3) : -XX Digits for internal electrical configuration (6) : V R = 20 V at F = 1 MHz Temperature ranges: Operating junction (T j ) : -55 C to +150 C Storage : -65 C to +150 C Case style Symbol min max min max Millimeters Millimeters Inches Inches K J I H G F E 0.94 typ typ. D C B A

8 SILICON PIN DIODES Surface mount attenuating silicon PIN diodes SURFACE MOUNT ATTENUATING SILICON PIN DIODES Features Description Large dynamic range Low harmonic distortion High minority carrier lifetime Surface mount package Tape and reel packaging available TEKELEC TEMEX uses its pro p r i e t a ry technology to manufacture its Silicon chips in SOT23. This products family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. The use of this technology eliminates wire bonding directly on to the chips. Outline drawing Applications Typical applications include variable RF attenuators and AGC (Automatic Gain Control) c i rcuits, from MHz to several GHz. The attenuating PIN diode uses pro p e rties of variation of forward series resistance versus the DC forward bias current. In order to obtain the best dynamic range, a single diode attenuator may be used in series or shunt configuration or designed as a multiple diode circuit (T or π circuit), where the device may be matched through the attenuation range. Note: To reduce the distortion, it is necessary to verify and design with the following formula: Î HF πτ l I DC F << 1 (Top view) Nota: Other plastic packages available. Î HF : RF peak current (A) τ l : Diode minority carrier lifetime(s) I DC : DC bias current (A) F : Application frequency (Hz) 1-8

9 SILICON PIN DIODES Surface mount attenuating silicon PIN diodes Electrical characteristics at 25 C I Zone Junction Reverse Carrier Electrical Series thickness capacitance current lifetime Parameters Resistance (1) C (2) j I R τ I Test conditions µm F = 120 MHz F = 1 MHz V R = 100 V I F = 10 ma I R = 6 ma I F = 0.1 ma I F = 1 ma I F = 10 ma pf µa µs Type (3) typ. min max min max min max typ. max max typ. DH40141-XX DH40144-XX DH40225-XX(4) (1) Other I zone thicknesses on request (2) Other capacitance values on request (3) -XX digits for internal electrical configuration (4) New products, please call your local sales offices. Temperature ranges: Operating juction (T j ) : - 55 C to C Storage : - 65 C to C Typical performance curve 1-9

10 SILICON PIN DIODES Low cost square ceramic package PIN diodes LOW COST SQUARE CERAMIC PACKAGE PIN DIODES Features Description Low loss, low distortion Low inductance High reliability Hermetically sealed package Non rolling MELF design Pick and place compatibility TEKELEC TEMEX is manufacturing a square PIN diode for surface mount applications. The chip inside is passivated to ensure high reliability and very low leakage current. These diodes ensure high power switching at frequencies from HF to few GHz. This package utilizes ceramic package technology with low inductance and leadless faced package. The design simplifies automatic pick and place indexing and assembly. The termination contacts are tin plated for vapor or reflow circuit board soldering. The active area is a PIN glass passivated chip which can be designed to customer specifications. Pinning Outline drawing Millimiters Inches Package SMD4 SMD6 SMD8 Symbol A B C A B C A B C min max min max

11 SILICON PIN DIODES Low cost square ceramic package PIN diodes Applications TEKELEC TEMEX square ceramic diodes are particularly suitable for high volume tape and reel assembly. Several values of total capacitance are available, together with a low forward series resistance. These components are designed to meet the low distortion specification required by all the mobile radio applications. Due to the specific design, these devices offer low loss and low thermal resistance performance and are characterized for high power handling. The electrical properties are ideal for use in antenna switches, filters, phase shifters, in all mobile radio applications from few MHz to GHz frequencies. Electrical characteristics at 25 C Electrical Parameter Applicable Total Forward Minority Package voltage capacitance series resistance carrier V C T R SF lifetime Power dissipation Test conditions I R < 10 µa τ I f = 1 MHz f = 120 MHz I F = 10 ma Contact V R = 50 V I F = 50 ma I R = 6 ma surface (1) Type Type V pf Ω µs W max typ. max typ. max min max SQM1050 SMD4 (2) SQM1150 SMD SQM1250 SMD SQM1350 SMD4 (2) SQM1450 SMD (1) diode brazed on infinite copper heat sink at 25 C (2) standard package SMD4 also available in SMD6 Temperature ranges: Operating junction (T j ) : -55 C to +150 C Storage : -65 C to +150 C Soldering : 230 C 5 Sec. 1-11

12 SILICON PIN DIODES Square ceramic surface mountable PIN diodes SQUARE CERAMIC SURFACE MOUNTABLE PIN DIODES Description These PIN diodes are manufactured in a square package (SMD) for surface mount applications. These packages utilize ceramic package technology with low inductance and axial terminations. This design simplifies automatic pick and place indexing and assembly. The termination contacts are tin lead plated for vapour or reflow circuit board soldering on Printed Circuit Boards. These diodes are particularly suited for applications in frequency hopping radios, low loss, low distorsion, and filters in HF, VHF and UHF frequencies. Electrical characteristics Characteristics Applicable Break- Forward Series Minitory Max Power Voltage down Total Capacitance Resistance Carrier Dissipation at 25 C V V BR C T R SF τ I 25 C TEST I < 10 µa I < 10 µa f = 1 MHz f = 120 MHz I F = 10 ma CONTACT FREE AIR CONDITIONS V R = 50 V I F I R = 6 ma SURFACE (2) (1) TYPE (3) V V pf Ω max µs W W max typ. typ. max I=100mA I=200mA min max max DH80050-XX DH80051-XX DH80052-XX DH80053-XX DH80054-XX DH80055-XX (1) Diode brazed on infinite copper heat sink Temperature ranges: (2) Diode brazed on epoxy circuit (PCB) Operating Junction (T j ) : -55 C to +175 C (3) - XX digits for package Storage : -65 C to +125 C - 06 = SMD4 and - 20 = SMD6 Series Resistance vs. Forward Current Series Resistance vs. Forward Current 1-12

13 SILICON PIN DIODES Non magnetic square ceramic package 500 volts PIN diodes NON MAGNETIC SQUARE CERAMIC PACKAGE 500 VOLTS PIN DIODES Features Description Non magnetic package Low loss, low distortion Low inductance High reliability Hermetically sealed package Glass passivated PIN diode chip Non rolling MELF design Pick and place compatibility TEKELEC TEMEX is manufacturing a non magnetic square PIN diode for surface mount applications. The properties of non magnetism prevent interference in the magnetic field of the imaging system. The chip inside is passivated to ensure high reliability and very low leakage. These diodes ensure high power switching at frequencies from 1 MHz to several GHz. This package utilizes ceramic package technology with low inductance and axial terminations. The design simplifies automatic pick and place indexing and assembly. The termination contacts are tin plated for vapor or reflow circuit board soldering. The active area is a PIN high power glass passivated chip which can be designed to customer specifications. Pinning Outline drawing 1-13

14 SILICON PIN DIODES Non magnetic square ceramic package 500 volts PIN diodes Applications Maximum ratings TEKELEC TEMEX non magnetic SQP diodes are particularly suitable for Magnetic Resonance Imaging applications. The maximum operating breakdown voltage is 550 V. Several values of total capacitance are available (beginning at 0.40 pf), together with a low forward series resistance. These devices are characterized for high power handling, low loss and low distortion (long carrier lifetime design). The electrical properties are ideal for use in RF coils which must produce a homogeneous electromagnetic field in the MRI system for frequencies from a few MHz to over 100 MHz. OPERATING JUNCTION - 55 C C STORAGE - 55 C C SOLDERING 230 C 5 sec. Electrical characteristics STANDARD RATINGS - MAXIMUM LIMITS OF ELECTRICAL PARAMETERS PACKAGED DIODES Minitory Characteristics Applicable Breakdown Total Capacitance Forward Series Power Carrier at 25 C Voltage Voltage Resistance Dissipation Lifetime V V BR C T R SF τ I Test I R < 10 µa I r < 10 µa f = 1 MHz f = 120 MHz I F = 10 ma Contact Conditions V R = 50 V I F as below I R = 6 ma Surface (1) TYPE V V pf Ω max µs W max typ. typ. max I F = m A I F = m A min max DH DH DH DH DH DH (1) diode brazed on infinite copper heat sink 1-14

15 SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency (RF) and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters. TEKELEC TEMEX s high-voltage PIN diode products are designed for very high reliability, high power handling capabilities, high isolation, and low signal distortion, especially in the HF and VHF bands. High-power multithrow switch modules are available for frequencies in the 1 MHz to 1 GHz range. All high-voltage PIN diode products can be configured on chips or in various packages: e.g. series, shunt, flat mount, stud mount, surface mount (SMD) and (on request) non-magnetic. The controlling element of a PIN diode is its Intrinsic (l) layer. The diode itself is a sandwich, i.e. a high resistivity l layer between highly doped layers of P and N materials. Wi t h negative bias on the l layer, the PIN diode exhibits very high parallel resistance, e.g. acting as a switch in the OFF position. A positive bias causes the diode to conduct, with very low series resistance. Certain applications impose specific objectives on diode construction (e.g. in the HF and VHF band, low signal distortion can be achieved with high Minority Carr i e r Lifetime τl). 1-15

16 SILICON PIN DIODES High voltage PIN diodes Silicon PIN diodes for switching & phase shifting applications (medium & high power) Description This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa technology. A broad range of products is available, in terms of breakdown voltages, junction capacitances, and series resistances, to suit a large variety of applications, from 1 MHz to several GHz. These diodes are available in non-magnetic packages. Electrical characteristics Characteristics at 25 C CHIP DIODES CHIP AND PACKAGED DIODES Applicable Break- Junction Forward Series Minitory Chip Voltage down Capacitance Resistance Carrier Dimensions V R V BR C (1) j R SF Lifetime τ I Test Conditions N/A I < 10µA I < 10µA TYPE µm typ. V V pf Ω MAX µs PIN Gold dia per side min typ. typ. max I F = 100 ma I F = 200 ma min EH EH EH EH EH EH EH EH EH EH EH V R = 100V I F = 200 ma I F = 300 ma EH EH H (2) EH H (2) EH EH EH V R = 200V I F = 200 ma I F = 300 ma EH EH H (2) EH EH H (2) EH H (2) (1) Other capacitance values available on request (2) Hexagonal chips (between opposite flats) V R = 50 V f =120 MHz I F =10mA f = 1 MHz I F AS SHOWN I R =6mA 1-16

17 SILICON PIN DIODES High voltage PIN diodes PACKAGED DIODES TYPE STANDARD CASE (3) THERMAL RESISTANCE R TH (4) P DISS = 1 W TYPICAL OPERATING CONDITIONS VSWR < 1.5 Z 0 = 50 Ω CHIP CONFIGURATION C/W FREQUENCY POWER PIN Shunt Isolated stud Flat mounted max MHz W DH80050 F 27d BH301 BH DH80051 F 27d BH301 BH DH80052 F 27d BH301 BH DH80053 F 27d BH301 BH DH80055 F 27d BH301 BH DH80080 F 27d BH301 BH DH80083 F 27d BH301 BH DH80086 BH35 BH301 BH DH80100 F 27d BH301 BH DH80102 F 27d BH301 BH DH80106 BH35 BH300 BH DH80120 F 27d BH301 BH DH80124 BH35 BH300 BH DH80126 BH35 BH300 BH DH80129 BH141 BH300 BH DH80154 BH141 BH300 BH DH80159 BH141 BH300 BH DH80182 BH35 BH300 BH DH80189 BH141 BH300 BH DH80204 BH141 BH300 BH DH80209 BH141 BH300 BH DH80210 BH141 BH300 BH (3)Custom cases available on re q u e s t (4) R TH is measured in a standard shunt case, grounded on an infinite heatsink Temperature ranges: Operating junction (T j ): -55 C to +175 C Storage: -65 C to +200 C 1-17

18 SILICON PIN DIODES High voltage PIN diodes Two & three port RF PIN switch modules Description This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family, to achieve very low loss and distortion. Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W. Electrical characteristics Type CHARACTERISTICS FREQUENCY LOSS ISOLATION INPUT POWER SUGGESTED BIAS AT 25 C RANGE CONDITIONS L I P in TEST CONDITIONS Case Switch Type N/A f (MHz) I F (ma) f (MHz) V R (V) CW FORWARD REVERSE MHz db db W ma V (1) (2) typ. max min max typ. typ. 200 MHz 100 MHz 100 ma 0 V SH90101 TO39 SP2T SH91101 TO39 SP2T MHz 200 MHz 100 ma 0 V SH90103 BH203 SP2T SH91103 BH203 SP2T SH92103 BH204 SP3T SH93103 BH204 SP3T MHz 200 ma 200 ma 100 V SH91107 BH403a SP2T MHz 10 MHz 200 ma 200 V SH90207 BH405 SP2T SH91207 BH405 SP2T (1) Series 90 and 92 : common anode (2) Custom configurations available on request Series 91 and 93 : common cathode Temperature ranges: Operating juction (T j ) : - 55 C to C Storage : - 65 C to C 1-18

19 SILICON PIN DIODES High voltage PIN diodes Internal wiring diagrams Typical performances INSERTION LOSS AND ISOLATION VERSUS FREQUENCY common anode common cathode BOTTOM VIEW SH90101 SH91101 SH90103 SH91103 SH92103 SH93103 SH91107 bias bias bias bias SH90207 SH

20 SILICON PIN DIODES Microwave applications MICROWAVE APPLICATIONS Low and medium voltage PIN diode applications The most common uses of these devices are: fast switching, attenuation and limiting. They operate at frequencies from a few MHz to 100 GHz. In switching applications, e.g. timing digital bit streams, these PIN diodes support signal power levels below 30 W, up to 100 GHz. Thin I layers, from 1 to 50 µm, and passivated mesa technology in chip configurations, yield very low junction capacitance (C j ), i.e. below pf. As attenuators, e.g. in Automatic Gain Control (AGC) circuits, these PIN diodes are manufactured with a proprietary technology. This technology optimises the relationship between C j and R SF (Forward Series Resistance), offering a high Minority Carrier Lifetime τ l, which minimises signal distortion. In limiting applications, e.g. passive protection for receivers, these PIN diodes operate as power dependent variable resistors. 1-20

21 SILICON PIN DIODES Microwave applications Ultrafast switching silicon PIN diodes Description For ultrafast switching, these passivated mesa diodes have a thin I layer (< 10 µm). Electrical characteristics CHIP DIODES CHIP AND PACKAGED DIODES PACKAGED DIODES C h a r a c t e r i s t i c s G o l d B re a k d o w n Junction Series Minority Reverse Thermal at 25 C Dia Voltage Capacitance Resistance Carrier Switching R e s i s t a n c e Lifetime Time Case C2a (1) Ø V BR C j R SF τ I T CR R th TEST V I R = 10 µa R = 6 V I F = 10 ma I F = 10 MA I F = 20 ma P diss CONDITIONS f = 1 MHz f = 120 MHz I R = 6 ma V R = 10 V 1 W 50 Ω F 27 d TYPE µm V pf Ω ns ns TYPE STANDARD CASES (1) C/W typ. min typ. max max typ. typ. C b = C b = 0.18 pf 0.12 pf (2) (2) EH DH50033 F27d M EH DH50034 F27d M EH DH50035 F27d M EH DH50036 F27d M EH DH50037 F27d M EH DH50052 F27d M EH DH50053 F27d M EH DH50054 F27d M EH DH50055 F27d M EH DH50056 F27d M EH DH50057 F27d M EH DH50071 F27d M EH DH50072 F27d M EH DH50073 F27d M EH DH50074 F27d M EH DH50075 F27d M EH DH50076 F27d M EH DH50077 F27d M EH DH50101 F27d M EH DH50102 F27d M EH DH50103 F27d M EH DH50104 F27d M EH DH50105 F27d M EH DH50106 F27d M EH DH50107 F27d M max (1) Custom cases available on request Temperature ranges: (2) C T = C j + C b Operating Junction (T j ) : -55 C to +175 C Storage : -65 C to +200 C 1-21

22 SILICON PIN DIODES Microwave applications Fast switching silicon PIN diodes Description For fast switching, these passivated mesa diodes have a medium I layer (< 50 µm). Electrical characteristics CHIP DIODES E L CHIP E AND C PACKAGED T R I DIODES C A L PACKAGED DIODES C h a r a c t e r i s t i c s G o l d B re a k d o w n Junction Series Minority Reverse Thermal at 25 C Dia Voltage Capacitance Resistance Carrier Switching R e s i s t a n c e Lifetime Time Ø V BR C j R SF τ I T CR R th TEST V I R = 10 µa R = 50 V I F = 10 ma I F = 10 MA I F = 20 ma P diss CONDITIONS f = 1 MHz f = 120 MHz I R = 6 ma V R = 10 V 1 W 50 Ω F27 d TYPE µm V pf Ω ns ns TYPE STANDARD CASES (2) C/W Case C2a (1) typ. min typ. max max typ. typ. C b = C b = 0.18 pf 0.12 pf (2) (2) EH DH50151 F27d M EH DH50152 F27d M EH DH50153 F27d M EH DH50154 F27d M EH DH50155 F27d M EH DH50156 F27d M EH DH50157 F27d M EH DH50201 F27d M EH DH50202 F27d M EH DH50203 F27d M EH DH50204 F27d M EH DH50205 F27d M EH DH50206 F27d M EH DH50207 F27d M EH DH50251 F27d M EH DH50252 F27d M EH DH50253 F27d M EH DH50254 F27d M EH DH50255 F27d M EH DH50256 F27d BH EH DH50401 F27d M EH DH50402 F27d M EH DH50403 F27d M EH DH50404 F27d BH EH DH50405 F27d BH (1) Chip presentation C2a, except: Temperature ranges: C2b foreh50256, EH50404 and EH50405 Operating junction (T j ) : -55 C to +175 C (2) Custom cases available on request Storage : -65 C to +200 C (3) C T = C j + C b max 1-22

23 SILICON PIN DIODES Microwave applications Attenuator silicon PIN diodes Description The table below presents a single set of values from the variety of customer options available for this series of passivated PIN diodes. TEKELEC TEMEX uses its proprietary technology, which enables the customer to incorporate characteristics specific to the application involved, e.g. capacitance and I zone thickness. Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits, from a few MHz to several GHz. Electrical characteristics CHIP DIODES CHARACT. AT 25 C TEST CONDITIONS TYPE C O N FI G U R A T I O N I ZONE THICKNESS (1) CHIP AND PACKAGED DIODES SERIES RESISTANCE R SF F = 120 MHz JUNCTION CAPACITANCE C J (2) F = 1 MHz V R = 50 V REVERSE CURRENT V R = 100 V µm I F = 0.1 ma I F = 1 ma I F = 10 ma pf µa µs Type Ω Ω Ω typ. min max min max min max typ. max max min typ. EH40073 C4c DH40073 F 27d EH40141 C4a DH40141 F 27d EH40144 C4c DH40144 F 27d EH40225 C4d DH40225 F 27d (1) Other I zone thicknesses available on request Temperature ranges: (2) Other capacitance values available on request Operating junction (T j ) : -55 C to +175 C (3) Custom cases available on request Storage : -65 C to +200 C I R MINORITY CARRIER LIFETIME τ I I F = 10 ma I R = 6 ma PACKAGED DIODES STANDARD PACKAGE (3) Typical series resistance vs forward current 1-23

24 SILICON PIN DIODES Microwave applications Silicon limiter PIN diodes Description These passivated mesa PIN diodes have a thin I layer. This series of diodes is available as chips and in hermetic ceramic packages. They operate as power dependent variable resistances and provide passive receiver protection (low noise amplifiers, mixers, and detectors). Electrical characteristics CHIP DIODES PACKAGED DIODES BREAKDOWN JUNCTION JUNCTION SERIES MINORITY GOLD DIA CARRIER VOLTAGE CAPACITANCE CAPACITANCE RESISTANCE Ø LIFETIME V BR C j0 C j -6 (1) R SF τ I I R = 10µA V R =0V V R =6V I F =10mA I F =1 0m A TEST CONDITIONS f = 1 MHz f = 1 MHz f=120 MHz I R = 6 ma TYPE CASE µm V pf pf Ω ns CHARACTERISTICS AT 25 C typ. min max typ. min max max typ. EH60033 C2a EH60034 C2a EH60035 C2a EH60036 C2a EH60037 C2a EH60052 C2a EH60053 C2a EH60054 C2a EH60055 C2a EH60056 C2a EH60057 C2a EH60072 C2a EH60074 C2a EH60076 C2a EH60102 C2a EH60104 C2a EH60106 C2a (1) Other values of capacitance available on request 1-24

25 SILICON PIN DIODES Microwave applications PACKAGED DIODES NOMINAL MICROWAVE CHARACTERISTICS CHARACTERISTICS AT 25 C TEST CONDITIONS THERMAL RESISTANCE R TH P diss = 1W case F 27d THRESHOLD P L f = 2.7 GHz 1dB Limiting LEAKAGE POWER P OUT f = 2.7 GHz INSERTION L f = 2.7 GHz P IN = -10 dbm 1 µs Pulse 1% DC STANDARD CASE (2) C/W dbm dbm db dbm W TYPE C b = 0.18 pf C b = 0.12 pf (3) (3) max typ. typ. typ. max max DH60033 F 27d M DH60034 F 27d M DH60035 F 27d M DH60036 F 27d M DH60037 F 27d M DH60052 F 27d M DH60053 F 27d M DH60054 F 27d M DH60055 F 27d M DH60056 F 27d M DH60057 F 27d M DH60072 F 27d M DH60074 F 27d M DH60076 F 27d M DH60102 F 27d M DH60104 F 27d M DH60106 F 27d M LOSS PEAK POWER P IN CW POWER P IN (2) Other capacitance values available on request Temperature ranges: (3) C T = C j +C b Operating junction (T j ) : -55 C to +125 C Storage : -65 C to +200 C 1-25

26 SILICON SCHOTTKY DIODES Selection guide SILICON SCHOTTKY DIODES Selection Guide SCHOTTKY BARRIER DETECTOR DIODES SCHOTTKY BARRIER MIXER DIODES 1-26

27 SILICON SCHOTTKY DIODES Silicon Schottky barrier detector diodes SILICON SCHOTTKY BARRIER DETECTOR DIODES Description Silicon Schottky barrier detector diodes are available as: packaged diodes chip They are optimised for wide band applications, in the frequency range from 1 to 18 GHz. Electrical characteristics packaged diodes CHARACTERISTICS AT 25 C TEST CONDITIONS FREQUENCY RANGE F oper N/A TANGENTIAL SENSITIVITY T ss VIDEO RESISTANCE R V Video bandwidth = 1 MHz I F = 30 µa RF POWER P RF FORWARD CONTINUOUS CURRENT I F CW N/A I R = 10 µa dbm kω mw ma V TYPE CASE (1) GHz min min max max max typ. DH340 F (1) Custom cases available on request Temperature ranges: Operating junction (T j ) : -55 C to +150 C Storage : -65 C to +175 C BREAKDOWN VOLTAGE V BR T = + 25 C I F = 30 µa Video bandwidth = 1 MHz Typical tangential sensitivity vs frequency 1-27

28 SILICON SCHOTTKY DIODES Silicon Schottky barrier mixer diodes SILICON SCHOTTKY BARRIER MIXER DIODES Description Silicon Schottky barrier mixer diodes are available in the following configurations: packaged chip Low barrier diodes are required for applications where the Local Oscillator (LO) drive level is between -10 dbm and +10 dbm. Medium barrier diodes are required for applications where the LO drive level is between -5 dbm and +15 dbm. The use of a passivated planar construction contributes to high reliability. Electrical characteristics packaged diodes CHARACTERISTICS AT 25 C FR E Q U E N C Y RANGE F oper SSB NOISE FIGURE NF SSB VSWR (RATIO) IF IMPEDANCE Z IF TEST PULSE ENERGY BREAKDOWN VOLTAGE V BR TOTAL CA PA C I TA N C E C TO TEST CONDITIONS N/A (1) N/A f = 30 MHZ P LO = 1 mw PULSE =3nS I R = 10 µa F =1MHZ V R =0 V TYPE CASE (2) GHz db ratio Ω Ergs V pf DH301 F DH302 F DH303 F DH312 F DH313 F DH314 F DH315 F DH322 F DH323 F DH324 F DH325 F RF Power max: 250 mw CW Temperature ranges: Operating junction (T j ) : -55 C to +150 C (1) Noise figure measurement conditions: Storage : -65 C to +175 C P LO = 1 mw f IF = 30 MHz NF IF = 1.5 db noise tube: 15.6 db dc load = 10 Ω test frequencies: 3.0, 9.3 or 15.0 GHz (2) Custom cases available on request max typ. max min max max typ. typ. 1-28

29 TUNING VARACTOR Selection guide TUNING VARACTOR Selection Guide SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR - V BR = 30 V - V BR = 45 V SILICON HYPERABRUPT JUNCTION TUNING VARACTOR MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTO A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast band receivers. 1-29

30 TUNING VARACTOR SOT23 surface mount silicon abrupt tuning varactor SOT23 surface mount silicon abrupt tuning varactor Features High quality factor Low leakage current Passivated silicon mesa technology Surface mount package Tape and reel packaging available Description TEKELEC TEMEX silicon abrupt tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family is designed for a low cost medium to high volume market that may be supplied in tape and reel for automated pick and place assembly on surface mount circuit boards. Outline drawing (Top view) Nota: Other plastic packages available. Applications The DH71000 series abrupt tuning varactor are o ff e red in a large selection of capacitance range. They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device. Typical applications include low noise narrow and moderate frequency bandwidth applications (VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned filters, phase shifters, delay lines... NOTE: Variation of the junction capacitance versus reverse voltage follows this equation: C j (V r ) C j (0 V) = 1 + V r φ [ ] γ V r : Reverse voltage φ : Built-in potential.7v for Si γ :.5 for abrupt tuning varactor 1-30

31 TUNING VARACTOR SOT23 surface mount silicon abrupt tuning varactor Electrical characteristics at 25 C Electrical Breakdown Junction Tuning Figure Parameters Voltage Capacitance Ratio of Merite V BR C j (1) (2) Q F = 1 MHz V Test Conditions I R = 10 µa C j0 /C R = 4 V j30 V R = 4 V F = 50 MHz V pf Type (3) typ. typ. min ± 20 % DH71010-XX DH71016-XX DH71020-XX DH71030-XX DH71045-XX DH71067-XX DH71100-XX (1) Other tolerance on request (2) DH71067-XX & DH71100-XX: Tolerance on C j ± 10 % (3) -XX digits for internal electrical configuration Temperature ranges: Operating junction (T j ) : -55 C to +150 C Storage : -65 C to +150 C Typical performance curve 1-31

32 TUNING VARACTOR High Q silicon abrupt junction tuning varactor HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR V BR 30V Description This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to Ku band. CHIP DIODES CH I P A N D PA C K A G E D DI O D E S PACKAGED DIODES (1) V BR (10 µa) 30 V STANDARD CASES OTHER CASES CHARACTERISTICS AT 25 C GOLD Junction FIG. OF Tuning Tuning DIA Capacitance Merit Ratio Ratio Ø C j Q C TO /C T30 C T O / C T3 0 Test Conditions V R = 4 V f = 1 MHZ V R = 4 V f = 50 MHZ CASE CAPACITANCE C b CASE CA PA C I TA N C E C b 1-32 TYPE CASE µm pf TYPE CASE CASE typ. ± 20 % (2) min C b = 0.18 pf (3) min C b = 0.12 pf (3) min EH71004 C2a DH71004 F27d 3.0 M EH71006 C2a DH71006 F27d 3.4 M EH71008 C2a DH71008 F27d 3.7 M EH71010 C2a DH71010 F27d 4.0 M EH71012 C2a DH71012 F27d 4.3 M EH71016 C2a DH71016 F27d 4.5 M EH71020 C2a DH71020 F27d 4.6 M EH71025 C2a DH71025 F27d 4.6 M EH71030 C2a DH71030 F27d 4.7 M EH71037 C2a DH71037 F27d 4.7 M EH71045 C2a DH71045 F27d 4.8 M EH71054 C2a DH71054 F27d 4.8 M ± 10 % (2) C b = 0.18 pf (3) C b = 0.2 pf (3) EH71067 C2a DH71067 F27d 4.9 BH EH71080 C2b DH71080 F27d 5.0 BH EH71100 C2b DH71100 F27d 5.0 BH EH71120 C2b DH71120 F27d 5.1 BH EH71150 C2b DH71150 F27d 5.1 BH EH71180 C2b DH71180 F27d 5.2 BH EH71200 C2b DH71200 F27d 5.2 BH EH71220 C2b DH71220 F27d 5.2 BH EH71270 C2b DH71270 F27d 5.2 BH EH71330 C2c DH71330 F27d 5.2 BH EH71390 C2c DH71390 F27d 5.2 BH EH71470 C2c DH71470 F27d 5.2 BH EH71560 C2c DH71560 F27d 5.2 BH EH71680 C2c DH71680 F27d 5.2 BH EH71820 C2d DH71820 F27d 5.2 BH EH71999 C2d DH71999 F27d 5.2 BH (1) Custom cases available on request Temperature ranges: (2) Closer capacitance tolerances available on request Operating junction (T j ) : -55 C to +150 C (3) C T = C j + C b Storage : -65 C to +175 C

33 TUNING VARACTOR High Q silicon abrupt junction tuning varactor V BR 45V Description This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa technology. It is well suited for frequency tuning applications up to X band. CHIP DIODES CH I P A N D PA C K A G E D DI O D E S PACKAGED DIODES (1) CHARACTERISTICS AT 25 C V BR (10 µa) 45 V STANDARD CASES OTHER CASES GOLD Junction FIG. OF Tuning Tuning DIA Capacitance Merit Ratio Ratio Ø C j Q C TO /C T45 C T O / C T4 5 V Test Conditions R = 4 V V R = 4 V CAPACITANCE f = 1 MHZ f = 50 MHZ C b C b TYPE CASE µm pf TYPE CASE CASE typ. ± 20 % (2) min C b = 0.18pF (3) min C b = 0.12pF (3) min EH72004 C2a DH72004 F27d 3.5 M EH72006 C2a DH72006 F27d 3.9 M EH72008 C2a DH72008 F27d 4.2 M EH72010 C2a DH72010 F27d 4.5 M EH72012 C2a DH72012 F27d 4.7 M EH72016 C2a DH72016 F27d 5.0 M EH72020 C2a DH72020 F27d 5.2 M EH72025 C2a DH72025 F27d 5.4 M EH72030 C2a DH72030 F27d 5.5 M EH72037 C2a DH72037 F27d 5.6 M EH72045 C2a DH72045 F27d 5.7 M EH72054 C2a DH72054 F27d 5.8 M ± 10 % (2) C b =0. 18pF (3) C b = 0. 2pF (3) EH72067 C2b DH72067 F27d 5.9 BH EH72080 C2b DH72080 F27d 5.9 BH EH72100 C2b DH72100 F27d 6.0 BH EH72120 C2b DH72120 F27d 6.0 BH EH72150 C2b DH72150 F27d 6.0 BH EH72180 C2b DH72180 F27d 6.0 BH EH72200 C2b DH72200 F27d 6.0 BH EH72220 C2c DH72220 F27d 6.0 BH EH72270 C2c DH72270 F27d 6.0 BH EH72330 C2c DH72330 F27d 6.0 BH EH72390 C2c DH72390 F27d 6.0 BH ± 10 % (2) C b = 0.18pF (3) C b = 0.4pF (3) EH72470 C2d DH72470 BH BH EH72560 C2d DH72560 BH BH EH72680 C2d DH72680 BH BH ± 10 % (2) C b = 0.4pF (3) C b = 0.4pF (3) EH72820 C2g DH72820 BH BH EH72999 C2g DH72999 BH BH (1) Custom cases available on request Temperature ranges: (2) Closer capacitance tolerances available on request Operating junction (T j ) : -55 C to +150 C (3) C T = C j + C b Storage : -65 C to +175 C CASE CASE CA PA C I TA N C E 1-33

34 TUNING VARACTOR Silicon hyperabrupt junction tuning varactor SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for VHF linear electronic tuning. CHIP DIODES CHIP AND PACKAGED DIODES PACKAGED DIODES GOLD BREAKDOWN TOTAL FIG. OF BIAS TUNING CHARACTERISTICS AT 25 C DIA VOLTAGE CAPACITANCE MERIT VOLTAGE RATIO Ø V BR CT Q V R C TO /C T20 TEST CONDITIONS I R =10µA f=1mhz V f=50mhz f=1mhz R V R TYPE CASE µm V pf TYPE min min typ. min V typ. C b =0.18pF EH724 C2b DH724 F27d EH726 C2b DH726 F27d EH728 C2b DH728 F27d EH730 C2b DH730 F27d EH732 C2b DH732 F27d (1) Custom cases available on request Temperature ranges: Operating junction (T j ) : -55 C to +150 C Storage : -65 C to +150 C STANDARD CASE (1) Typical total capacitance and Q versus reverse voltage 1-34

35 TUNING VARACTOR Microwave silicon hyperabrupt junction tuning varactor MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR Description This series of silicon tuning varactors consists of hyperabrupt epitaxial devices. They incorporate a passivated mesa technology. Packaged or chip devices are available for linear electronic tuning up to Ku band. CHIP DIODES CHIP AND PACKAGED DIODES PACKAGED DIODES CHARACTERISTICS AT 25 C TEST CONDITIONS GOLD BREAKDOWN TOTAL FIG. OF TUNING DIA VOLTAGE CAPACITANCE MERIT RATIO V BR C T Q C TO /C T20 I R =10µA f=1mhz f=1 GHz V R =6V V R = 6V f=1mhz TYPE CASE µm V pf TYPE STANDARD CASE (1) min min typ. typ. min C b = 0.18 pf C b = 0.12 pf EH733 C2a DH733 F27d M208 EH734 C2a DH734 F27d M208 EH735 C2a DH735 F27d M208 EH736 C2a DH736 F27d M208 EH737 C2a DH737 F27d M208 EH738 C2a DH738 F27d M208 (1) Custom cases available on request Temperature ranges: Operating junction (T j ) : -55 C to +150 C Storage : -65 C to +175 C Typical total capacitance and Q versus reverse voltage 1-35

36 POWER GENERATION DIODES Selection guide POWER GENERATION DIODES Selection Guide STEP RECOVERY DIODES SILICON MULTIPLIER VARACTORS 1-36

37 POWER GENERATION DIODES Step recovery diodes and multiplier varactor applications STEP RECOVERY DIODES AND MULTIPLIER VARACTOR APPLICATIONS A step recovery diode (SRD) generates pulses that can be used to multiply frequencies, and to set up reference points, e.g. for synchronising test instruments. This device operates by alternately producing and consuming a charge, based on the frequency of its input signal. During forward bias, the SRD conducts and builds up its charge. During reverse bias, the SRD maintains conduction by consuming its charge. When the charge has been fully consumed, the SRD snaps off, i.e. very quickly reverts to zero conduction. This device acts as a switch, controlling current flow by alternately storing and releasing its charge, form i n g pulses at a repetition rate equal to the frequency of its input. The output of a step recovery diode is most often used in two ways: a pulse train can be applied to resonant circuits, which provides output power at a frequency above that of the original input, a pulse train can be used to develop a series of frequencies at multiples of the original input frequencies. Typical applications of step re c o v e ry diodes include oscillators, power transmitters and drivers, for telecommunications, telemetry, radar and test equipments. In choosing a SRD, the significant characteristics include: Output Frequency (f o ) ; Breakdown Voltage (V B R ) ; Junction Capacitance (C j ) ; Minority Carr i e r Lifetime (τ l ) ; Snap-off Time (t so ) ; Thermal Resistance (R th ) and Output Power (P o ). Multiplier varactors A multiplier varactor is a physical stack of series-connected SRD units. This configuration is capable of multiplying power. Packages for multiplier varactors are designed to dissipate the power yield Power out Power in Most of these packages hold from 2 to 4 chips, this type of components are available on customer request. ( 1-37

38 POWER GENERATION DIODES Step recovery diodes (SRD) STEP RECOVERY DIODES (SRD) Description These diodes use mesa technology and oxide passivation. They support fast switching and multiplier applications: very short pulse generation, ultra fast waveform shaping, comb generation, high order multiplication, at moderate power ratings. CHIP DIODES CHIP AND PACKAGED DIODES PACKAGED DIODES CHARACTERISTICS AT 25 C TEST CONDITIONS N/A IR = 10µA GO L D BR E A K D O W N JU N C T I O N M I N. CA R. SN A P- OF F TH E R M A L DI A VO LTA G E CA PA C I TA N C E LI F E T I M E TI M E RE S I S TA N C E V B R C j τ I t S O R T H V R =6 V I F =10mA I F = 10 ma P diss = 1 W f = 1 MHz I R = 6mA V R = 10V in F27d TYPE CASE µm V pf ns ps TYPE CASE (1) C/W Other cases (1) typ. min max min typ. max C b =0. 1 p F (2) max C b =0. 18p F C b =0. 18p F (2) (2) EH541 C2a DH541 A22e 30 F27d M208 EH542 C2a DH542 A22e 25 F27d M208 EH543 C2a DH543 A22e 40 F27d M208 EH544 C2a DH544 A22e 35 F27d M208 EH545 C2a DH545 A22e 70 F27d M208 EH546 C2a DH546 A22e 100 F27d M208 (1) Custom cases available on request Temperature ranges: (2) C T = C j + C b Operating junction (T j ) : -55 C to +150 C Storage : -65 C to +175 C 1-38

39 POWER GENERATION DIODES Silicon multiplier varactor SILICON MULTIPLIER VARACTORS Description These silicon multiplier varactors (from 0.2 to 25 GHz) are designed for harmonic generation of high power levels (stack configuration) and/or at high multiplication orders. Packaged diodes CHARACTERISTICS AT 25 C TEST CONDITIONS VA R A C T O R CHIPS PER PACKAGE OUTPUT FREQ. F O N/A TYPE CASE GHz BREAKDOWN VOLTAGE V BR I R = 10 µa JUNCTION CAPACIT. C j V R = 6 V f = 1 MHz MIN. CAR. LIFETIME τ I I F = 10 ma I R = 6 ma SNAP-OFF TIME t so I F = 10 ma V R = 10 V THERMAL RESISTANCE R th DH294 DO DH200 F DH270 S W DH110 F27d DH293 F60d DH252 F27d DH256 F27d DH292 F27d DH267 F27d N/A POWER OUTPUT P o f o = (n)f i V pf ns ps C/W W min max min max min max max typ. (n) Temperature ranges: Operating junction (T j ) : -55 C to +150 C Storage : -65 C to +175 C 1-39

40 MOS CAPACITORS CHIPS & ARRAYS Selection guide MOS CAPACITORS CHIPS & ARRAYS Selection Guide SINGLE-PAD MOS CAPACITORS MULTI-PADS MOS CAPACITORS MULTI-PADS BAR CAPACITORS HOW TO ORDER 1-40

41 MOS CAPACITORS CHIPS & ARRAYS Top process / High performance TOP PROCESS / HIGH PERFORMANCE TEKELEC TEMEX M.O.S. (Metal - Oxide - Silicon) chips and arrays capacitors feature small size and high Q performances making them ideally suited for hybrid microwave circuits up to 30 GHz. The dielectric (Silicon dioxide) thermally grown on a silicon wafer has a very low dielectric constant ( 1 = ) and very stable temperature coefficient allowing a complete range of stable capacitance values (0.1 to 100 pf). The dielectric thickness determines the rated voltage for a given capacitance value: V R = 40 V e = 0.15 µm V R = 100 V e = 0.25 µm V R = 200 V e = 0.50 µm V R = 400 V e = 1.0 µm V R = 500 V e = 1.8 µm The metallization areas which are the terminations of the capacitors are obtained with photo-masking technics and are made of sputtered titanium ( 700 Å) and gold ( 6000 Å). An electrolytic gold layer of 1.5 µm is made on top termination to ensure the best contact with the external circuits: Bottom termination attachment technics: EutecticAu-Sn (80/20) Melting point 280 C Au-Ge (88/12) Melting point 350 C Conductive epoxy Top termination: Thermocompression, Thermosonic and wedge bonding may be used. Applications DC Block, RF by-pass Source by-pass Impedance matching - Trimming Filters Decoupling for Ga-As FET Physical description S e Silicon N + Gold electrolytic Ti/Au Silicon dioxide (Si O 2 ) Ti/Au The capacitance is given by C = 1 x 1 = S = surface of the top termination e = thickness of the oxide S e 1-41

42 MOS CAPACITORS CHIPS & ARRAYS Single-pad chip capacitor CS series SINGLE-PAD CHIP CAPACITOR CS SERIES General characteristics Capacitance range (C R ): 0.1 to 100 pf. See tables 1 & 2. Tolerance capacitance: Standard :± 20 % (CS, CJ, CB) Others :± 10, ± 5, ± 2 % (consult us) Rated voltage (U R ):See tables 1, 2 & 3. Note: Voltage and capacitance values being tightly linked to dielectric thickness and top termination area means, special requirements may be achieved by our engineers. Please consult us. Voltage proof (25 C):1.5 x U R Insulation resistance (R i ): R i 10 5 MΩ. (at rated voltage and 25 C) Temperature coefficient: 50 ppm /C (typical) (over temperature range) Storage and operating temperature range: - 55 C to C. Environmental characteristics CONSTRAINT CONSTRAINT STANDARD / CONDITIONS Experimental results before first failure SALT NFC 20711: 35 C, 5% NaCl, 35 C 16, 24, 48, 96, 168, 336, 672 h. 5% NaCl > 400 hours SPRAY MIL STD 202 F, method 101D 35 C, 5% NaCl, 48, 96 h. DAMP NFC C 93% RH HEAT MIL STD 202 F, method 103B > 56 days CONTAMINENTS GAM EG 13 Coolanol 50 C, 24 h. Kerozene 65 C, 165 h. Glycol > hours THERMAL NFC / C Temperature/nb of cycles specific > hours SHOCK MIL STD 202 F, method 107G - 65 / C N cycles: 5, 25, 50, 100 > hours A: - 55 / + 85 C B : - 65 / C C : - 65 / C D: - 65 / C RADIATION On study Dimensions (in µm) L T L ø (1) (2) Case L T size min - max typical MC MC MC MC Note 1: ø is indicated in table 1 for each capacitance value. Note 2: Square termination may also be achieved. Please consult us. Table 1: Top termination diameter (µm) versus Capacitance / Voltage range C R MC106 MC107 MC108 MC pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf pf

43 MOS CAPACITORS CHIPS & ARRAYS Multi-pads capacitor arrays CJ series MULTI-PADS CAPACITOR ARRAYS CJ SERIES These capacitor arrays are intended for fine and precise adjustments in circuits which need to be tuned and kept tuned whatever the mechanical and environmental conditions are. Dimensions (in µm) MC111 L MC112 L N o t e: These capacitor arrays are made of several pads per case size. For each case size, the unit and basic capacitance value is S. This is also the value of the step capacitance. The number of steps is obtained with alll combinations to be achieved with the basic capacitance pad S and the other pads made of 2S, 4S, 10S The area of the minimum capacitance value S is given herebelow for each case size. S 2S 4S MC113 2S L 4S 10S 2S S S MC114 S L 4S 2S MC111 : S = (70 x 70) µm 2 MC112 : S = (90 x 90) µm 2 MC113 : S = (180 x 270) µm 2 MC114 : S = (115 x 400) µm 2 For special designs, please consult us. S 3S 2S 2S S Table 2: Capacitance / Voltage range Note: Standard tolerance: ± 20% (M). Case Size C min Number of C max Voltage S steps (V R ) Case L T size min - max typical MC MC MC MC MC pf pf 400 V MC pf pf 200 V MC pf pf 100 V MC pf pf 400 V MC pf pf 200 V MC pf pf 100 V MC pf 6 60 pf 40 V MC pf 3 30 pf 40 V 1-43

44 MOS CAPACITORS CHIPS & ARRAYS Multi-pads bar capacitors CB series MULTI-PADS BAR CAPACITORS CB SERIES These capacitor arrays are primarily intended for mounting in Ga-As integrated circuit packaging for by-pass, decoupling and matching purposes. They can also be used in hybrid circuits where high performance and stable capacitors are required. The stable characteristics of these devices (temperature coefficient, low inductance, low insertion loss) are perfectly suited to civil and military applications in the SHF and VHF application ranges (radar, communications, transmission equipments). Note: A kit containing 1 bar of each assembly (3, 4 and 5 pads of 100 pf) is available from TEKELEC TEMEX Sales Office. Please consult us to get a free MOS-BAR kit sample. Dimensions (in mm): See table 3 Multi-pads arrays Y W X Ga As T L Carrier Table 3: Capacitance / Voltage range and dimensions (µm) Note: Standard tolerance: ± 20% (M). Case Number of Cr max per pad (pf) L W T X Y Size pads 500V 400V 200V 100V 40V 25V ± 125 max typ. max max MC MC MC

45 MOS CAPACITORS CHIPS & ARRAYS How to order How to order A - Single-pad chip capacitors B - Multi-pads arrays capacitors 501 MC106 CS OR82 K 401 MC111 CJ OR125 M 23 Rated Voltage 501 = 500V 401 = 400V 201 = 200V 101 = 100V 400 = 40V Case Size Series C a p a c i t a n c e Va l u e OR82 : 0.82pF OR1 : 0.1pF 1RO : 1 pf 100: 10pF 101 : 100pF 2 significants digits 3 rd is a multiplier 0 : 10 0 = 1 1 : 10 1 = 10 C a p a c i t a n c e To l e r a n c e M = ± 20 % On request K = ± 10 % J = ± 5% G = ± 2 % Special requirement if needed Rated Voltage 401 = 400V 201 = 200V 101 = 100V 400 = 40V Ex.: Case Size Series M i n i m u m B a s i c C a p a c i t a n c e MC pf min ± 20% - 400V 23 steps (C max = pf) C a p a c i t a n c e To l e r a n c e M = ± 20% N u m b e r of step C - Multi-pads bar capacitors Designer kit: MOS-KIT 401 MC140 CB 100 M In order to back-up engineers in their design purposes, TEKELEC TEMEX proposes a kit made of following parts: Rated Voltage 501 = 500V 401 = 400V 201 = 200V 101 = 100V 400 = 40V Case Size (nber of pads) MC130 = 3 MC140 = 4 MC150 = 5 Series C a p a c i t a n c e Va l u e of each pad C a p a c i t a n c e To l e r a n c e M = ± 20 % Special requirement if needed Case Size MC106 MC107 MC108 Capacitance value pf pf pf MC pf MC pf (C min) MC pf (C min) MC pf MC pf Capacitance tolerance: ± 20 % Please order: MOS-KIT 1-45

46 MICROWAVE SILICON COMPONENTS Case styles CASE STYLES GENERAL PURPOSE SURFACE MOUNT DEVICES STRIP LINE / MICRO STRIP A22e SMD3 BH15 BH28 SMD4 BH16 BH32 SMD6 BH36 BH35 SMD8 BH100 BH142a SOD323 BH101 BH142b SOT23 BH143 BH142c SOT143 BH146 BH142d BH147 BH142e POWER BH151 BH142f BH152 BH165 BH165s BH167 BH167s F27d F30 F51 F54 F54s F60 F60d M208a M208b M208c M208d BH141 BH158 BH158am BH200a BH202 BH203a BH203b BH203c BH204 BH300 BH301 BH303 BH403a BH405 BH153 BH154 BH155 BMH76 C2 C4 CHIP version M208e M208f S268/W1 TO39 W2 1-46

47 MICROWAVE SILICON COMPONENTS Case styles A22e C b =0.1pF E DIA.083 DIA D DIA.016 DIA BH15 C b =0.1pF E D C C B B A A BH16 C b =0.16pF E D C B A BH28 C b =0.2pF C B DIA.084 DIA A DIA.126 DIA BH32 C b =0.2pF C BH35 C b =0.25pF H G F B DIA.168 DIA E A DIA.238 DIA D DIA.064 DIA C DIA.164 DIA B DIA.128 DIA A DIA.064 DIA BH36 C b =0.1pF E D BH100 C b =0.25pF E D C C B B A A

48 MICROWAVE SILICON COMPONENTS Case styles BH101 C b =0.15pF E D C B A BH141 C b =0.4pF F E D C UNF-3A B DIA.203 DIA A DIA.263 DIA BH142a C b =0.2pF G F BH142b C b =0.2pF E D C B B A DIA.087 DIA A DIA.087 DIA BH142c C b =0.2pF E BH142d C b =0.2pF E D D C C B B A DIA.087 DIA A DIA.087 DIA BH142e C b =0.2pF E BH142f C b =0.2pF D C B A DIA.087 DIA E D C B A DIA.087 DIA 1-48

49 MICROWAVE SILICON COMPONENTS Case styles BH143 C b =0.1pF E D C B A BH146 C b =0.25pF E D C B A BH147 C b =0.25pF E BH151 C b =0.25pF E D D C C B B A A BH152 C b =0.05pF E D C B A BH153 C b =0.13pF E D C B A BH154 C b =0.13pF E D C B A BH155 C b =0.13pF E D C B A

50 MICROWAVE SILICON COMPONENTS Case styles BH158 C b =0.4pF D BH158am C b =0.4pF D C DIA.216 DIA C DIA.216 DIA B B A DIA.264 DIA A DIA.240 DIA BH165 C b =0.12pF G F BH165s C b =0.12pF F E DIA.026 DIA E DIA.026 DIA D D C DIA.052 DIA C DIA.052 DIA B B A DIA.081 DIA A DIA.081 DIA BOL MILLIMETER INCHES BOL MILLIMETER INCHES BH167 C b =0.12pF G F E DIA.026 DIA D C DIA 052 DIA B A DIA.064 DIA BH167s C b =0.12pF F E DIA.026 DIA D C DIA.052 DIA B A DIA.064 DIA BOL MILLIMETER INCHES 1-50

51 MICROWAVE SILICON COMPONENTS Case styles BH200a C b =0.4pF L K J DIA 1.240DIA I H G F DIA.128 DIA E D C B A DIA.508 DIA BH202 C b =0.15pF M L K DIA.482 DIA J DIA.128 DIA I H G F E D C B A DIA.380 DIA BH203a C b =0.15pF M L K DIA.482 DIA BH203b C b =0.15pF M L K DIA.482 DIA J DIA.128 DIA J DIA.128 DIA I I H H G G F F E E D D C C B B A DIA.380 DIA A DIA.380 DIA C b =0.15pF M C b =0.15pF M BH203c L K DIA.482 DIA BH204 L K DIA.482 DIA J DIA.128 DIA J DIA.128 DIA I I H H G G F F E E D D C C B B A DIA.380 DIA A DIA.380 DIA 1-51

52 MICROWAVE SILICON COMPONENTS Case styles BH300 C b =0.4pF I H G 6-32 UNC - 3A F E D C B A DIA.264 DIA BH301 C b =0.2pF J I H G 4-40 UNC - 3A F E D C B A DIA.126 DIA BH303 C b =0.4pF I H G 6-32 UNC - 3A F BH403a C b =0.3pF N M Typical : 45 L K DIA.428 DIA E J D I C H B G A DIA.264 DIA F E D C UNF 3A B DIA.508 A BH405 C b =0.4pF J I H BMH76 C b =0.15pF K J I G H F G E F D E DIA.099 DIA C 5/16-24 UNF - 2A D B C A DIA.780 DIA B A NL: +31

53 MICROWAVE SILICON COMPONENTS Case styles C2 C2J C2H C4G C2G C4F C2E C4E C2D C4D C2C C4C C2B C4B C2A C4A CON min max min max CON min max min max C4 FIG A (µm) A (µ ) FIG A (µm) A (µ ) F27d C b =0.18pF H DIA.081 DIA G DIA.124 DIA F DIA.063 DIA E DIA.063 DIA D C B A F30 C b =0.25pF D C B DIA.084 DIA A DIA.124 DIA F51 C b =0.1pF D C DIA.066 DIA B DIA.084 DIA A F54 C b =0.2pF F E D DIA.029 DIA C DIA.053 DIA B A DIA.085 DIA BOL MILLIMETER INCHES 1-53

54 MICROWAVE SILICON COMPONENTS Case styles F54s C b =0.2pF C F D F60 b =0.2pF E C D B DIA.053 DIA C DIA.064 DIA A DIA.085 DIA B DIA.084 DIA A DIA.124 DIA BOL MILLIMETER INCHES F60d C b =0.25pF F M208a C b =0.12pF G F E E D D C DIA.064 DIA C B DIA.084 DIA B A DIA.124 DIA A 1,07 1, DIA.058 DIA BOL MILLIMETER INCHES BOL MILLIMETER INCHES M208b C b =0.12pF M208c C b =0.12pF E D C B A DIA.058 DIA B A DIA.058 DIA M208d C b =0.12pF E M208e C b =0.12pF E D D C C B B A DIA.058 DIA A DIA.058 DIA 1-54 NL: +31

55 MICROWAVE SILICON COMPONENTS Case styles M208f C b =0.12pF C b =0.2pF I S268/W1 H F E D C B A DIA.058 DIA BOL MILLIMETER INCHES G F DIA.104 DIA E D C 3-48 UNC 2A B A DIA.128 DIA BOL MILLIMETER INCHES SMD3 C b =0.11pF C b =0.24pF E Typical 0,2 Typical.008 E D C B DIA.094 DIA A DIA.104 DIA SMD4 D Typical 1 Typical.039 C B A SMD6 C b =0.24pF E Typical 0,20 Typical.008 D Typical 1.20 Typical.047 SMD8 C B B A C SOD323 SOT23 C b =0.2pF K H G F E D C B A SYM Typical Typical J I H G F E 0.94 typ typ. D C B A BOL Millimeters Millimeters Inches Inches 1-55