Also Offering RoHs Compliant Equivalent Parts. Surface Mount Plastic PIN Diodes. SMPP Series V13. Features. Description and Applications
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1 Features Industry Packages Lead-Free () Equivalents Available with 260 C Reflow Compatibility Low Loss, High Isolation Switching Diodes Low Distortion Attenuator Diodes Single and Dual Diode Configurations Tape and Reel Packaging Description and Applications M/A-COM offers silicon PIN diodes in five standard, low cost, surface mount plastic packages for use as switches and attenuators. These diodes are offered with standard Sn/Pb plating, as well as with 0% matte Sn plating on our RoHS compliant devices. M/A-COM s PIN diodes feature a variety of low resistance, low capacitance devices for various microwave control circuit applications. The MA4P275/MA4P7436/MADP series offer the lowest series resistance for best performance as low loss series switches and high isolation shunt switches. The MA4P789/ MA4P7433/MADP series have the lowest capacitance and offers the highest isolation in series and series-shunt switches through 3GHz. The MA4P277/MA4P7437/MADP series and MA4P278/MA4P7438/MADP series device have thicker intrinsic regions to provide lower distortion in attenuator circuits. The MA4P290/MADP series devices have the thickest I-Region, offering the lowest distortion and highest IP3 for current controlled attenuator circuits. These devices are ideal for AGC functions for infrastructure and CATV applications. These parts are available as single diodes, series tees (ST), series tee reverse (STR), common cathode pairs (CK), common anode pairs (CA), and unconnected pairs in the respective featured packages. M/A-COM s PIN diodes are available in the SOT-23 (case style 287), the SOT-43 (case style 68), the SOT-323/SC-70 (3L) (case style 46), the SOD- 323 (case style 4), and the SC-79 (case style 279) packages. These packages are supplied on tape and reel for automatic pick and place assembly. The tape and reel suffix designation is a T at the end of the part number. The MA4P282/ MA4P7447/MADP series and the MA4P274/MA4P7455/ MADP series are general purpose PIN diodes useful as either switches or attenuators. Package Outlines SOT-23 SOT-43 SOT-323 SOD-323 SC-79 Visit for additional data sheets and product
2 Absolute Maximum 25 C (Unless Otherwise Noted) Parameter Absolute Maximum Value Operating Temperature -65 C to +50 C Storage Temperature -65 C to +25 C Junction Temperature + 75 C RF C.W. Incident 25 C: MA4P282 / MA4P7447/MADP Series( θ die = 5 C / W ), RF & DC Incident De-rating Coefficient = mw / C MA4P275 / MA4P7436/MADP Series( θ die = 25 C / W ), RF & DC Incident De-rating Coefficient = mw / C MA4P278 / MA4P7438/MADP Series ( θ die = 30 C / W ), RF & DC Incident De-rating Coefficient = mw / C MA4P274 / MA4P7455/MADP Series ( θ die = 35 C / W ), RF & DC Incident De-rating Coefficient = mw / C MA4P277 / MA4P7437/MADP Series ( θ die = 45 C / W ), RF & DC Incident De-rating Coefficient = mw / C MA4P290 / MADP Series ( θ die = 55 C / W ), RF & DC Incident De-rating Coefficient = mw / C MA4P789 / MA4P7433/MADP Series( θ die = 80 C / W ), RF & DC Incident De-rating Coefficient = -.7 mw / C + 32 dbm + 3 dbm + 30 dbm + 30 dbm + 30 dbm + 30 dbm + 29 dbm Total ( RF + DC ) Power 25 C ( SOT-23, SOT-43 ) : RF & DC Dissipated De-rating Coefficient = mw / C ( SOT-323, SOD-323, SC-79 ) : RF & DC Dissipated De-rating Coefficient = mw / C Reverse Voltage Forward. Operation Current of these devices above any one of these parameters may cause permanent damage. 250 mw 200 mw Voltage Rating 50 ma DC Electrical 25 C MA4P275 MA4P789 MA4P282 MA4P274 MA4P277 MA4P278 RoHS Compliant MA4P7436 MADP Series MA4P7433 MADP Series MA4P7447 MADP Series MA4P7455 MADP Series MA4P7437 MADP Series MA4P7438 MADP Series Nominal Characteristics Reverse Total R ma 3 Carrier I-Region Voltage Capacitance 2 Max. Lifetime 4 Thickness Max. (V) (Ohms) (μs) (mils) 20V V V V V V MA4P290 MADP V The reverse current will not exceed μa at the reverse voltage rating. 2. Total capacitance is measured at MHz at the indicated voltage. 3. Series resistance is measured at the specified current and a frequency of 0 MHz. Visit for additional data sheets and product
3 Packaging and Configurations Single Single SC-79 SOD-323 SOT-23 MADP T MADP T MADP T MADP T MA4P275-4T MA4P7436-4T MA4P T MA4P T MA4P789-4T MA4P7433-4T MA4P T MA4P T MA4P282-4T MA4P7447-4T MA4P T MA4P T MA4P274-4T MA4P7455-4T MA4P T MA4P T MA4P277-4T MA4P7437-4T MA4P T MA4P T MA4P278-4T MA4P7438-4T MA4P T MA4P T MA4P290-4T MADP T MA4P T MADP AT LS = 0.6 nh LS = 0.6 nh LS =.4 nh CP = 0. pf CP = 0. pf CP = 0.2 pf Common Cathode Common Anode SOT-23 SC70 (3L) SOT-23 SC70 (3L) MA4P275CK-287T MA4P7436CK-287T MA4P275CK-46T MA4P7436CK-46T MA4P275CA-287T MA4P T MA4P275CA-46T MA4P7436CA-46T MA4P289CK-287T MA4P7433CK-287T MA4P789CK-46T MA4P7433CK-46T MA4P789CA-287T MA4P T MA4P789CA-46T MA4P7433CA-46T MA4P282CK-287T MA4P7447CK-287T MA4P282CA-287T MA4P7447CA-287T MA4P274CK-287T MA4P7455CK-287T MA4P274CK-46T MA4P7455CK-46T MA4P274CA-287T MA4P7455CA-287T MA4P274CA-46T MA4P7455CA-46T MA4P277CK-287T MADP FT MA4P277CA-287T MA4P7437CA-287T MA4P278CK-287T MADP FT MA4P278CA-287T MA4P7438CA-287T MA4P290CK-287T MADP FT MA4P290CA-287T MADP GT LS =.4 nh LS =.3 nh LS =.4 nh LS = 0.6 nh CP = 0.2 pf CP = 0.2 pf CP = 0.2 pf CP = 0. pf 3 Visit for additional data sheets and product
4 Packaging and Configurations Series Tee Series Tee Reverse SOT-23 SC70 (3L) SOT-23 SC70 (3L) MA4P275ST-287T MA4P7436ST-287T MA4P275ST-46T MA4P7436ST-46T MA4P275STR-287T MADP DT MA4P275STR-46T MADP DT MA4P789ST-287T MA4P7433ST-287T MA4P789ST-46T MA4P7433ST-46T MA4P789STR-287T MADP DT MA4P789STR-46T MADP DT MA4P282ST-287T MA4P7447ST-287T MA4P282ST-46T MADP BT MA4P282STR-287T MADP DT MA4P282STR-46T MADP DT MA4P274ST-287T MA4P7455ST-287T MA4P274CK-46T MA4P7455ST-46T MA4P274STR-287T MADP DT MA4P274STR-46T MADP DT MA4P277ST-287T MADP BT MA4P277ST-46T MADP BT MA4P277STR-287T MADP DT MA4P277STR-46T MADP DT MA4P278ST-287T MADP BT MA4P278ST-46T MADP BT MA4P278STR-287T MADP DT MA4P278STR-46T MADP DT MA4P290ST287T MADP BT MA4P290ST-46T MADP BT MA4P290STR-287T MADP DT MA4P290STR-46T MADP DT LS =.4 nh LS =.3 nh LS =.4 nh LS =.3 nh CP = 0.2 pf CP = 0.2 pf CP = 0.2 pf CP = 0.2 pf Low Inductance SOT-23 Unconnected Pair SOT-43 MA4P290-LI-287T MADP HT MA4P275-68T MA4P T MA4P789-68T MA4P T MA4P274-68T MA4P T LS = 0.4 nh LS =.3 nh CP = 0.2 pf CP = 0.2 pf 4 Visit for additional data sheets and product
5 Typical Forward Resistance vs DC Bias Current 0 MHz (MA4P274 / MA4P7455 MADP DTSeries) (MA4P275 / MA4P7436 /MADP Series) μa μa 0μA ma ma 0mA 0. μa μa 0μA ma ma 0mA FORWARD BIAS CURRENT FORWARD BIAS CURRENT (MA4P277 / MA4P7437 /MADP Series) (MA4P278 / MA4P7438 /MADP Series) μa μa 0μA ma ma 0mA μa μa 0μA ma ma 0mA FORWARD BIAS CURRENT FO RWARD BIAS CURRENT 5 Visit for additional data sheets and product
6 Typical Forward Resistance vs DC Bias Current 0 MHz (MA4P282 / MA4P7447 / MADP Series) (MA4P789 / MA4P7433/ MADP Series) μa μa 0μA ma ma 0mA FORWARD BIAS CURRENT μa μa 0μA ma ma 0mA FO RWARD BIAS CURRENT (MA4P290 / MADP Series), Forward Bias Current (ma) 6 Visit for additional data sheets and product
7 Case Styles SOT-23 Case Style 287 H F D J G L M A C N B K E SOT-23 (Case Style 287) INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C D E F G H typical 0.95 typical J typical.90 typical K L DIM. GRADIENT M max. N Note:. Applicable on all sides SOT-323 Case Style 46 SOT-323 (Case Style 46) C A E D B J F H G MAX. INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C D E F G H typical 0.5 J Visit for additional data sheets and product
8 Case Styles (Cont d) SOD-323 Case Style 4 SOD-323 (Case Style 4) G F H D C A E B INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C D E F G H SOT-43 Case Style 68 E G J K D H M N A C P B L F SOT-43 (Case Style 68) INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C D E F G H J typical.90 typical K typical.90 typical L M DIM. GRADIENT M max. N Note:. Applicable on all sides 8 Visit for additional data sheets and product
9 Mounting Information The illustration indicates the recommended mounting pad configuration for the SOT-23, SOT-323, SOD-323, SOT-43, and SC-79 packages. Solder paste containing flux should be screened onto the pads to a thickness of inches. The plastic package is placed in position, firmly adhering to the solder paste. Permanent attachment is performed by a reflow soldering procedure during which the tab temperature does not exceed +275 C and the body temperature does not exceed +250 C, for standard models and +260 C for the RoHS compliant devices. SOT min min Dimenstions: inches mm Please refer to Application Note M538 for surface mounting instructions. SOT-323 SOD Dimenstions: inches mm Dimenstions: inches mm SOT-43 SC Dimenstions: inches mm Dimenstions: inches mm 9 Visit for additional data sheets and product
10 Case Styles (Cont d) Also Offering SC-79 (Case Style 279) SC-79 Case Style 279 Cathode Mark F Topview E Max B Seating Plane INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C D E F G H C D A Max G H Visit for additional data sheets and product
SMPP Series. Surface Mount Plastic PIN Diodes. Features. Description and Applications. Package Outlines. Rev. V22
Features Industry Surface Mount Packages Lead-Free () Equivalents Available with 260 C Reflow Compatibility Low Loss, igh Isolation Switching Diodes Low Distortion Attenuator Diodes Single and Dual Diode
MA4P7470F-1072T. Non Magnetic MELF PIN Diode. Features. Description and Applications. Designed for Automated Assembly
Features Non-Magnetic Package Suitable for MRI Applications Rectangular MELF SMQ Ceramic Package Hermetically Sealed Low Rs for Low Insertion Loss Long τ L for Low Intermodulation Distortion Low Cj for
MA4E2054 Series. Surface Mount Low Barrier Schottky Diode. Features. Description and Applications. Rev. V9 SOT-23 (287) SOT-143 (1068)
Features Low I R (
Surface Mount PIN Diodes. Technical Data. HSMP-38XX and HSMP-48XX Series. Package Lead Code Identification. Features
Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency
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High Power PIN Diodes
Applications Series/shunt elements in high power HF/VHF/ UHF transmit/receive (T/R) switches Features Very low thermal resistance for excellent power handling: 40 W C/W typical Low series resistance SMP1324-087LF:
Pin Connections and Package Marking. GUx
Surface Mount RF PIN Switch Diodes Technical Data HSMP-389x Series HSMP-89x Series Features Unique Configurations in Surface Mount Packages Add Flexibility Save Board Space Reduce Cost Switching Low Capacitance
MA4P T. Quad PIN Diode π Attenuator MHz. M/A-COM Products Rev. V2. Features. Functional Schematic. Description.
1-4 MHz Features 4 PIN diodes in a SOT-2 Plastic Package Externally Selectable Bias and RF Matching Network 1 4, MHz Useable Frequency Band + 43 IP3 @ ( Ω) 1. db Loss @ ( Ω) 3 db Attenuation @ ( Ω) Lead-Free
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Features Specified Bandwidth: 45MHz 2.5GHz Useable 30MHz to 3.0GHz Low Loss 40dB High C.W. Incident Power, 50W at 500MHz High Input IP3, +66dBm @ 500MHz Unique Thermal Terminal for
Plastic Packaged Surface Mount Varactor Diodes
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Silicon PIN Limiter Diodes V 5.0
5 Features Lower Insertion Loss and Noise Figure Higher Peak and Average Operating Power Various P1dB Compression Powers Lower Flat Leakage Power Reliable Silicon Nitride Passivation Description M/A-COM
High Power PIN Diodes
High Power PIN Diodes Features High Power Handling Low Loss, Low Distortion Voltage Ratings to 1000 Volts Passivated PIN Chip Full Face Bonded Hermetically Sealed Low Inductance Axial Lead, and SMQ Surface
MADP Solderable AlGaAs Flip Chip PIN. Features. Chip Dimensions. Description. Applications
Features Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation Polyimide Scratch
SMP1302 Series: Switch and Attenuator Plastic Packaged PIN Diodes
DATA SHEET SMP1302 Series: Switch and Attenuator Plastic Packaged PIN Diodes Applications TV distribution and cellular base stations High volume switch and attenuators Features Designed for base station
SMP1307 Series: Very Low Distortion Attenuator Plastic Packaged PIN Diodes
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Features Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation Chip Outline A Square
MMP PIN Diode Data Sheet Rev A
Rev A Features Low Series Resistance for Low Insertion Loss and High Isolation: R S < 1.2 Ω Low Junction Capacitance for Low Insertion Loss and High Isolation: C J < 0.1 pf Low Thermal Resistance: < 45
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Features Low Loss kw Coarse Limiters 200 Watt Midrange Limiters 10 mw Clean Up Limiters 210 20 Description Alpha has pioneered the microwave limiter diode. Because all phases of manufacturing, from design
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Features 3 Terminal LPF Broadband Shunt Structure Low Slope Resistance, 7 Ω +3 dbm Peak and CW Power Handling.6 db Shunt Insertion Loss +2 dbm Flat Leakage Power Lead-Free 1. x 1.2 mm 6-lead TDFN Package
SMP1321 Series: Low Capacitance, Plastic Packaged PIN Diodes
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Features 3 Terminal LPF Broadband Shunt Structure Broadband Frequency > 2.5 W Peak and CW Power Handling < 0.5 db Shunt Insertion Loss < +15 dbm Flat Leakage Power Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package
UM4000/UM Microsemi Microwave Products 75 Technology Drive, Lowell, MA , , Fax:
UM4 / UM49 DESCRIPTION The UM4 and UM49 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators,
1. Exceeding these limits may cause permanent damage.
Silicon PIN Diode s Features Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar s Voltage Ratings to 3000V Faster Switching Speed
HMC639ST89 / 639ST89E
v3.1 HMC63ST / 63STE AMPLIFIER,.2-4. GHz Typical Applications The HMC63ST(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Features
SDS4148G SWITCHING DIODE
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SMP1345 Series: Very Low Capacitance, Plastic Packaged Silicon PIN Diodes
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FEATURES DESCRIPTION ABSOLUTE MAXIMUM RATINGS. T AMB = +25 C ( Unless otherwise specified )
Monolithic PIN SP5T Diode Switch FEATURES Ultra Broad Bandwidth: 50MHz to 26GHz 1.0 db Insertion Loss 30 db Isolation at 20GHz Reliable. Fully Monolithic Glass Encapsulated Construction DESCRIPTION The
( Θ )Thermal Resistance ( O C/W) 60 kw 35 kw 20 kw
UM7000 / UM70 / UM7200 DESCRIPTION The UM7000 and UM70 series offer moderately high power handling in combination with reasonably low levels of both series resistance and capacitance. The UM7200 series
RF OUT / N/C RF IN / V G
MAAM-111 MHz - 2 GHz Rev. V2 Features Functional Schematic 12 db Gain Ω Input / Output Match over Gain Range 3 db Gain Control with to -2 V Control +18 dbm Output Power + V, -. V DC, 7 ma Lead-Free 1.
GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318, MA4E1319-1, MA4E V1. Features. Description and Applications MA4E1317
Features Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion Description and Applications M/A-COM's
MA4PBL027. HMIC Silicon Beamlead PIN Diode. Features MA4PBLP027. Description. Applications
Features No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 ff
HMC639ST89 / 639ST89E
Typical Applications The HMC39ST9(E) is ideal for: Cellular / PCS / 3G WiMAX, WiBro, & Fixed Wireless CATV & Cable Modem Microwave Radio IF and RF Sections Functional Diagram Electrical Specifications,
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HMCST / STE Typical Applications v2.3 GaAs phemt MMIC LNA, Ohm - 1 MHz Features The HMCST(E) is ideal for: High P1 Output Power: +1 m VHF / UHF Antennas HDTV Receivers CMTS Equipment CATV, Cable Modem
Features. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
SMP1322 Series: Low Resistance, Plastic Packaged PIN Diodes
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DESCRIPTION The HDX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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SBB-3089Z Pb MHz InGaP HBT Active Bias Gain Block
Product Description Sirenza Microdevices SBB-389Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
Data Sheet. HSMP-383x Surface Mount RF PIN Diodes. Description/Applications. Features. Package Lead Code Identification (Top View)
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TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Measured Performance. Primary Applications Space Military Broadband Wireless
6 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz > 38 dbm Nominal Psat 55% Maximum PAE 15 db Nominal Power Gain Bias: Vd = 28-40 V, Idq = 125 ma, Vg = -3 V Typical Technology:
HMC589ST89 / 589ST89E. Features OBSOLETE. DC GHz GHz GHz. db Gain 22
v.71 HMC59ST9 / 59ST9E Typical Applications The HMC59ST9 / HMC59ST9E is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications
HMC241AQS16 / 241AQS16E
v00.1213 Typical Applications Features The HMC241AQS16 & HMC241AQS16E are ideal for: Base Stations & Portable Wireless CATV / DBS Wireless Local Loop Test Equipment Functional Diagram RoHS Compliant Product
Features. Parameter Frequency Min. Typ. Max. Units
v1.6 Typical Applications The HMC545A / HMC545AE is ideal for: Cellular/3G Infrastructure Private Mobile Radio Handsets WLAN, WiMAX & WiBro Automotive Telematics Test Equipment Functional Diagram Features
HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications
v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage
Features OBSOLETE. DC GHz GHz GHz GHz GHz
v2.71 HMC75ST9 / 75ST9E Typical Applications The HMC75ST9 / HMC75ST9E is an ideal RF/IF gain block & LO or PA driver: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio &
HMC478SC70 / 478SC70E v
HMC47SC7 / 47SC7E v2.14 Typical Applications The HMC47SC7(E) is an ideal for: Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
SMP1331 Series: Low Capacitance, Plastic Packaged PIN Diodes
DT SHEET SMP1331 Series: Low Capacitance, Plastic Packaged PIN Diodes pplications High-performance wireless switches Low-distortion attenuators Features Capacitance: 0.18 pf typical @ 30 V Series resistance:
SBB-5089Z GHz, Cascadable Active Bias InGaP HBT MMIC Amplifier
Product Description Sirenza Microdevices SBB-89Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable
3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
3 Volt, Low Noise High ft Silicon Transistor Features High Performance at VCE = 3V Low Noise Figure at Small Currents (.3- ma) High Gain (14 db) at 1mA Collector Current High ft (14 GHz) Available on Tape
SBB-1089 SBB-1089Z MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier
Product Description Sirenza Microdevices SBB89 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC476SC7 / 476SC7E v4.814 Typical
1 MHz to 2.7 GHz RF Gain Block AD8354
1 MHz to 2.7 GHz RF Gain Block AD834 FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply
Surface Mount SOT-363 (SC-70) Package. Pin Connections and Package Marking 4 V CC. Note: Package marking provides orientation and identification.
1.5 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-52063 Features Ultra-Miniature Package Single 5 V Supply (30 ma) 22 db Gain 8 dbm P 1dB Unconditionally Stable Applications Amplifier for Cellular,
1 MHz to 2.7 GHz RF Gain Block AD8354
Data Sheet FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply stable Noise figure: 4.2
HMC480ST89 / 480ST89E
v2.7 HMCST9 / ST9E Typical Applications The HMCST9 / HMCST9E is an ideal RF/IF gain block & LO or PA driver for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test
HMC580ST89 / 580ST89E. Features OBSOLETE. DC GHz GHz GHz. db db db Gain Variation Over Temperature DC GHz 0.
v.71 HMC5ST9 / 5ST9E Typical Applications The HMC5ST9 / HMC5ST9E is ideal forr: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
BAR64... BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-05 BAR64-05W BAR64-04W
Silicon PIN Diode High voltage current controlled RF resistor for RF attenuator and switches Frequency range above MHz up to 6 GHz Very low capacitance at zero volt reverse bias at frequencies above GHz
AG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz + dbm PdB @ 9 MHz +6 dbm OIP @ 9 MHz Single Voltage Supply Internally matched to Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Measured Performance. Primary Applications Space Military Broadband Wireless
12 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz > 41 dbm Nominal Psat 55% Maximum PAE 15 db Nominal Power Gain Bias: Vd = 28-40 V, Idq = 250 ma, Vg = -3 V Typical Technology:
SMPA LF: Low Distortion Attenuator Plastic Packaged PIN Diode
DATA SHEET SMPA1304-011LF: Low Distortion Attenuator Plastic Packaged PIN Diode Automotive Applications Infotainment Navigation Telematics Garage door openers Wireless control systems Features AEC-Q101
DATASHEET ISL Features. Applications. Ordering Information. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier.
ISL55 MMIC Silicon Bipolar Broadband Amplifier NOT RECOMMENDED FOR NEW DESIGNS NO RECOMMENDED REPLACEMENT contact our Technical Support Center at 1-888-INTERSIL or www.intersil.com/tsc DATASHEET FN17 Rev.
20 MHz to 6 GHz RF/IF Gain Block ADL5542
FEATURES Fixed gain of db Operation up to 6 GHz Input/output internally matched to Ω Integrated bias control circuit Output IP3 46 dbm at MHz 4 dbm at 9 MHz Output 1 db compression:.6 db at 9 MHz Noise
Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*
Typical Applications The HMC637LP5(E) wideband PA is ideal for: Features P1dB Output Power: +29 dbm Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional
SMP LF: Surface-Mount PIN Diode for Switch and Attenuator Applications
DATA SHEET SMP32-085LF: Surface-Mount PIN Diode for Switch and Attenuator Applications Applications Low-loss, high-power switches Low-distortion attenuators (Pin 3) (Pin ) Features Low thermal resistance:
Features. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
TGA2806-SM. CATV Linear Amplifier. Key Features. Measured Performance Small Signal Gain (75 Ω) includes balun losses
CATV Linear Amplifier Key Features Frequency Range: 40MHz - 1GHz Gain: 20 db 1.7 db 75 Ω Noise Figure Ultra-Low Distortion: -67dBc ACPR typical Low DC Power Consumption Single Supply Bias:+8V, 380mA 28L
Surface Mount Mixer and Detector Schottky Diodes
DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Applications Sensitive RF and microwave detector circuits Sampling and mixer circuits High-volume wireless WiFi and mobile Low-noise receivers
SMP1304 Series: Low-Distortion Attenuator Plastic Packaged PIN Diodes
DT SHEET SMP1304 Series: Low-Distortion ttenuator Plastic Packaged PIN Diodes pplications TV distribution ttenuator circuits Features Low-distortion design Frequency range from 5 MHz to >2 GHz Designed
Features. Parameter Frequency Min. Typ. Max. Units Insertion Loss DC GHz db. DC GHz
v1.11 HMC55 / 55E Typical Applications The HMC55 / HMC55E is ideal for: RFID & Electronic Toll Collection (etc) Tags, Handsets & Portables ISM, WLAN, WiMAX & WiBro Automotive Telematics Test Equipment
MPS Datasheet 100 MHz to 3 GHz RoHS Compliant 40 Watt Monolithic SPST PIN Switch
MPS4103-607 Datasheet 100 MHz to 3 GHz RoHS Compliant 40 Watt Monolithic SPST PIN Switch Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside
Agilent HSMP-389x & HSMP-489x Series Surface Mount RF PIN Switch Diodes Data Sheet
Agilent HSMP-389x & HSMP-89x Series Surface Mount RF PIN Switch Diodes Data Sheet Features Description The HSMP-389x series is optimized for switching applications where low resistance at low current and
AG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
Silicon PIN Diode: DH80106 Issue October 2013
Ct [pf] Rs [ma] Silicon PIN Diode: DH806 Issue October 203 Features High Power Handling (500W) Low loss, Low distortion design Die or package option Rugged, hermetically sealed package RoHS compliant Description
50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications The HMC652LP2E
OBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description
v1.5 LO AMPLIFIER,.5-2.7 GHz Typical Applications The is ideal for: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +28 dbm Low
Features. Specifications. Notes: Package marking provides orientation and identification 53 = Device Code X = Month of Manufacture = Pin 1
AVT-53663 DC 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-53663 is an economical, easyto-use, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
SMP1307 Series: Very Low Distortion Attenuator Plastic Packaged PIN Diodes
DT SHEET SMP307 Series: Very Low Distortion ttenuator Plastic Packaged PIN Diodes pplications Very low distortion PI and TEE attenuators Cable TV GC High-volume wireless systems Features Low distortion
TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Primary Applications Defense & Aerospace Broadband Wireless. Product Description
50 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz 47 dbm Nominal Psat 55% Maximum PAE 8.7 db Nominal Power Gain Bias: Vd = 28-35 V, Idq = 1 A, Vg = -3.6 V Typical Technology:
Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]
![Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]](/thumbs/87/97046026.jpg "Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]")
HMC754SGE v.49 Typical Applications The HMC754SGE is ideal for: CATV / Broadband Infrastructure Test & Measurement Equipment Line Amps and Fiber Nodes Customer Premise Equipment Functional Diagram Output
MAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.
Features 2 Watt Saturated Output Power Level Variable Drain Voltage (6-V) Operation x mm Lead PQFN Package RoHS Compliant Description The MAAP-67-PKG3 is a 3-stage 2 W power amplifier with on-chip bias
Features. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 13 db
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Hybrids Test Instrumentation SATCOM & Sensors Functional Diagram Features Broadband Performance: DC
400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324
Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.
CLA LF: Surface Mount Limiter Diode
DATA SHEET CLA4609-086LF: Surface Mount Limiter Diode Applications Low loss, high power limiters Receiver protectors Features Low thermal resistance: 25 C/W Typical threshold level: +36 dbm Low capacitance:
MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic
MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While
Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz
Typical Applications The HMC62LP / HMC62LPE Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features
HMC326MS8G / 326MS8GE
v9.511 AMPLIFIER, 3. - 4.5 GHz Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier Functional Diagram Features
MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic
MGA-243 Low Noise Amplifier Data Sheet Description Avago Technologies MGA-243 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for use in LNA and driver stages. While
Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. Pin Description Simplified outline Symbol 1 cathode
Rev. 01 11 March 2005 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. 1.2 Features High speed switching for RF signals
High IP3 Low-Noise Amplifier
EVALUATION KIT AVAILABLE General Description The low-cost, high third-order intercept point (IP3) low-noise amplifier (LNA) is designed for applications in 2.4GHz WLAN, ISM, and Bluetooth radio systems.
CLA LF: Surface Mount Limiter Diode
DATA SHEET CLA4610-085LF: Surface Mount Limiter Diode Applications Low-loss, high-power limiters Receiver protectors Anode (Pin 1) Anode (Pin 3) Features Low thermal resistance: 73 C/W Typical threshold
225mW SMD Switching Diode
225mW SMD Switching Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.613 Typical Applications The HMC545A
Features OBSOLETE. = +5V in a 50 Ohm System. Parameter Frequency Min. Typ. Max. Units DC GHz DC GHz
Typical Applications The HMC252QS24 / HMC252QS24E is ideal for: Base Station CATV / DBS MMDS & WirelessLAN Test Equipment Functional Diagram Features Low Insertion Loss (2 GHz):.9 Single Positive Supply:
MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
PRELIMINARY MSW2T-2030-192/MSW2T-2031-192/MSW2T-2032-192 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 6 GHz Surface Mount SP2T Switch 5mm x 8mm x 2.5mm