Silicon PIN Diode: DH80106 Issue October 2013

Transcription

1 Ct [pf] Rs [ma] Silicon PIN Diode: DH806 Issue October 203 Features High Power Handling (500W) Low loss, Low distortion design Die or package option Rugged, hermetically sealed package RoHS compliant Description The DH806 series is designed for high power range switches where efficient compromise between power handling, low losses and low distortion are required. Diodes use glass passivation technology and mesa design for high reliability purposes Choice of hermetic ceramic packages with various heatsink types are proposed for thermal or microwave performances optimization. RoHS Compliant Applications The excellent thermal properties assure predictable superior performances in high power application such as switches for filter bank, antenna and MRI application. Maximum Ratings Absolute Parameter maximum Operating temperature (Tj) - 55 C, +75 C Storage temperature - 65 C, +200 C Reverse Voltage 00 V Dissipated 25 C 25 W* Nota: any operation above these parameters may cause permanent damages. *Contact on infinite copper heatsink Electrical 25 C Parameter Symbol Test condition Min Typ Max Unit Reverse current at 25 C I r V r min = 00 V.0 A Forward voltage V f I f = 0 ma.0 V Junction capacitance C j V r = 50V, F = MHz.4.7 pf Forward series Resistance R sf I f = 0 ma, F=20 MHz 0.35 Forward series Resistance R sf I f = 200 ma, F=20 MHz 0.3 I region thickness - 0 µm Minority Carrier Lifetime T l I f =ma, I r =6mA µs Total capacitance BH202N, BH35 C T V r = 50V, F = MHz pf Thermal resistance BH4 R th P d =W 6.0 C/W Total capacitance BH4, BH58am C T V r = 50V, F = MHz.8 2. pf Typical electrical 25 C Ct versus Vr MHz Rs versus If 20 MHz Vr [V] 0, 0 If [ma]

2 Pd [W] Silicon PIN Diode: DH806 Issue October 203 Case style BH4 Cb=0.4pF Maximum Dissipated Power Rating Tcase [ C] Symbol Millimeters Inches ФA ФB ФC UNF 3A D E F BH202N Cb=0.2pF Die C2I Symbol Millimeters Inches ФA B C D E F G H I ФJ L M Symbol Millimeters Inches C2I Ordering information Die form: EH delivered in ESD waffle pack BH4 package: DH806-0, non magnetic variant on request BH202N package: DH BH58am (non magnetic), BH35 packages available on request

3 Non magnetic Silicon PIN Diode: DH806-N Issue Oct 203 Features High Power Handling (400W) Low loss, Low distortion design Die or package option Rugged, hermetically sealed package RoHS compliant Description The DH806 series is designed for high power range switches where efficient compromise between power handling, low losses and low distortion are required. Diodes use glass passivation technology and mesa design for high reliability purposes Choice of hermetic ceramic packages with various heatsink types are proposed for thermal or microwave performances optimization. RoHS Compliant Applications The excellent thermal properties assure predictable superior performances in high power application such as switches for filter bank, antenna and MRI application. Maximum Ratings Absolute Parameter maximum Operating temperature (Tj) - 55 C, +75 C Storage temperature - 65 C, +200 C Reverse Voltage 900 V Dissipated 25 C 8 W* Nota: any operation above these parameters may cause permanent damages. *Contact on infinite copper heatsink Electrical 25 C Parameter Symbol Test condition Min Typ Max Unit Reverse current at 25 C I r V r min = 900 V.0 µa Forward voltage V f I f = 0 ma.0 V Total capacitance C T V r = 50V, F = MHz pf Forward series Resistance R sf I f = 0 ma, F=20 MHz 0.35 Ω Forward series Resistance R sf I f = 200 ma, F=20 MHz 0.3 Ω Minority Carrier Lifetime T l I f =ma, I r =6mA µs Parallel Resistance Rp Vr= 0V, F = 30 MHz 0 kω Thermal resistance R th P d =W 8.0 C/W Non-magnetic Distorsion Bo field 0.5 ppm Typical electrical 25 C Ct versus Vr MHz Ct [pf] Vr [V]

4 Non magnetic Silicon PIN Diode: DH806-N Issue Oct 203 Case style BH58 am Cb=0.4pF Tin termination Symbol Millimeters Inches ФA B ФC D Ordering information: In bulk: DH806-N, BH58am (non magnetic) Tape & Reel, 00p: DH806-NT

5 Non magnetic Silicon PIN Diode: DH806-N Issue Oct 203 Features High Power Handling (400W) Low loss, Low distortion design Die or package option Rugged, hermetically sealed package RoHS compliant Description The DH806 series is designed for high power range switches where efficient compromise between power handling, low losses and low distortion are required. Diodes use glass passivation technology and mesa design for high reliability purposes Choice of hermetic ceramic packages with various heatsink types are proposed for thermal or microwave performances optimization. RoHS Compliant Applications The excellent thermal properties assure predictable superior performances in high power application such as switches for filter bank, antenna and MRI application. Maximum Ratings Absolute Parameter maximum Operating temperature (Tj) - 55 C, +75 C Storage temperature - 65 C, +200 C Reverse Voltage 900 V Dissipated 25 C 8 W* Nota: any operation above these parameters may cause permanent damages. *Contact on infinite copper heatsink Electrical 25 C Parameter Symbol Test condition Min Typ Max Unit Reverse current at 25 C I r V r min = 900 V.0 µa Forward voltage V f I f = 0 ma.0 V Total capacitance C T V r = 50V, F = MHz pf Forward series Resistance R sf I f = 0 ma, F=20 MHz 0.35 Ω Forward series Resistance R sf I f = 200 ma, F=20 MHz 0.3 Ω Minority Carrier Lifetime T l I f =ma, I r =6mA µs Parallel Resistance Rp Vr= 0V, F = 30 MHz 0 kω Thermal resistance R th P d =W 8.0 C/W Non-magnetic Distorsion Bo field 0.5 ppm Typical electrical 25 C Ct versus Vr MHz Ct [pf] Vr [V]

6 Non magnetic Silicon PIN Diode: DH806-N Issue Oct 203 Case style BH58 am Cb=0.4pF Tin termination Symbol Millimeters Inches ФA B ФC D Ordering information: In bulk: DH806-N, BH58am (non magnetic) Tape & Reel, 00p: DH806-NT