Carrier Mobility, Channel on Resistance r DS(on) MOSFET Threshold Voltage V tn, V tp SPICE Parameter Extraction
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1 EE4902 ab 2 C2008 PURPOSE: Carrier Mobility, Channel on Resistance r DS(on) MOSFET Threshold Voltage V tn, V tp SPICE Parameter Extraction The purpose of this lab is to measure the resistive nature of the MOSFET drainsource channel. Upon completion of this lab you should be able to: Recognize that the channel of a MOSFET looks (mostly) resistive for small currents i D and small values of drainsource voltage v DS. Recognize that increasing the gate drive beyond the threshold voltage reduces the channel "on" resistance r DS(on), Determine the carrier mobility and threshold voltage for the N and Pchannel MOSFETs in the CD4007 Compare the measured data to predicted values based on extracted parameters Prelab P2. In the circuit of Fig. P2, a is used to measure the drainsource resistance r DS(on) as a function of applied gatesource voltage v GS. The following data is obtained: v GS r DS(on).5 V Ω Ω Ω Ω Estimate the threshold voltage V t and µ n C ox procedure) for this MOSFET (see riteup section for vgs M Figure P2.
2 ab Exercise: REDUCING ON RESISTANCE r DS(on) BY INCREASING GATE DRIVE v GS 2. Use the circuit of Fig. 22 (using the in ohmmeter mode) to measure the on resistance r DS(on) directly. As you vary v GS, you will see variation in the on resistance. NOTE: Unfortunately, this requires lots of lead swapping and button clicking you need to measure the on resistance r DS(on) between the drain and source terminals ( as ohmmeter), but also the applied gatesource voltage v GS ( as voltmeter). Keep the negative ( or black) lead attached to ground; just swap the positive ( or red) lead. Since the currents flowing in this circuit are relatively small, you don't need to turn power off when changing the lead configuration save time! ADDITIONA NOTE: It's important to observe the lead polarity shown in Fig. 22. If the connection is reversed, the current will forward bias the substratetodrain diode when V GS < V t. ANOTHER ADDITIONA NOTE: For this part, it s very important to leave the on the 20V/20kΩ range throughout. Changing the resistance range changes the current the uses to measure resistance, which affects the resistance measured in the triode region. The problem: in the 2kΩ range, the injects a larger test current than in the 20kΩ range. This causes a larger value of v DS, violating the small v DS condition for the resistive portion of the triode region. So, even though normal practice would be to use the 2kΩ range when measuring r DS(on) less than 2kΩ (for better measurement resolution), in this case, we ll live with lower resolution so as not to violate the small v DS condition. 22. Set the power supply voltage V SUPPY to provide v GS of approximately 5V. Measure r DS(on) and v GS. The resistance r DS(on) should be in the range of approximately 200Ω to kω (which will read 0.2kΩ to kω with the on the 20kΩ range). Reduce v GS until r DS(on) has increased by about a factor of two. Measure r DS(on) and v GS again. As v GS decreases, you should see r DS(on) increase. Continue decreasing the power supply voltage to decrease v GS in increments that approximately double the measured value of r DS(on). Measure r DS(on) and v GS at each step and make a table of measurements in your lab notebook. As v GS gets closer to the threshold voltage V tn, r DS(on) will start increasing rapidly. As r DS(on) increases, take a few data points with r DS(on) values of about 2kΩ, 5kΩ, and 0kΩ. You should end up with a total of about 5 to 0 data points. In your lab notebook, plot r DS(on) as a function of v GS. Note that increasing gate drive v GS reduces the value of onresistance. Also, plot / r DS(on) as a function of v GS. You should see an approximately linear relationship between / r DS(on) and v GS ; a line through the measured data points should intersect the v GS axis at the threshold voltage. VSUPPY R 0k! R2 2k! VGS M /6 CD4007 (RED) (BK) Figure 22. 2
3 23. Repeat the above procedure for a Pchannel MOSFET as shown in Figure 23 below. You may need to adjust your leadswapping technique with the since you will now be measuring v SG : Keep the positive ( or red) lead attached to ground; just swap the negative ( or black) lead. The range of resistances r DS(on) should be similar to the previous part; follow the same procedure for gathering data. In your lab notebook, plot r DS(on) as a function of v SG. Also, plot / r DS(on) as a function of v SG. Note that, since your horizontal axis is v SG rather than v GS, some care is needed in interpreting the plots. For the Pchannel MOSFET making the gate drive voltage v GS more negative reduces the value of onresistance. On the / r DS(on) plot, you should also see an approximately linear relationship between / r DS(on) and v SG ; however in this case a line through the measured data points should intersect the v SG axis at the negative of the threshold voltage. So, for example, if the v SG intercept is at 2V, then the threshold voltage is 2V. (RED) VSUPPY R 0k! R2 2k! VSG 6 4 M /6 CD (BK) Figure 23. 3
4 RITEUP REATIONSHIP BETEEN ON RESISTANCE r DS(on) AND GATE DRIVE v GS NChannel MOSFET 2. Plot r DS(on) as a function of v GS. 22. Plot / r DS(on) as a function of v GS. Using this plot, extract the slope µ n C ox, and the xintercept (threshold voltage V tn ) for the triode region "on" resistance expression: r DS(on) = (2) µ n C ox ( v GS "V t ) 23. From the slope µ n C ox, determine the value of mobility µ n. Use your value of C ox from ab and the / = 350/0 for the CD Using your parameters from 22, plot the prediction of the MOSFET r DS(on) model on the same axes with your measured data from part 22. How well does the model predict the measured data? PChannel MOSFET 25. Plot r DS(on) as a function of v SG. 26. Plot / r DS(on) as a function of v SG. Using this plot, extract the slope µ p C ox, and the xintercept (which will be V tp, the negative of the pchannel threshold voltage) for the triode region "on" resistance expression: (2) r DS(on ) = µ p C ox ( ( )) v SG " "V tp 27. From the slopeµ p C ox, determine the value of mobility µ p. Use your value of C ox from ab and the / = 900/0 for the CD Using your parameters from 26, plot the prediction of the MOSFET r DS(on) model on the same axes with your measured data from part 23. How well does the model predict the measured data? 4
5 NOTE: The above procedure can be considerably simplified by using the MATAB file rdsplot.m, available from the course website. ook at the source code to see where to put in your measurements. Your plots will look something like Figure 24 below. Fig. 24 5
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