55:041 Electronic Circuits

Size: px
Start display at page:

Download "55:041 Electronic Circuits"

Transcription

1 55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1

2 Basic Structure of MOS Capacitor Sect. 3.1 Width = m or less Thickness = m or less ` MOS Metal-Oxide-Semiconductor A. Kruger MOSFETs, Page-2

3 Why MOS? Very small compared to Bipolar Junction Transistors (BJTs) Field effect => inherently low power In digital circuits that allows for great density and so-called VLSI circuits: microcontrollers, memory, ownside MOSFETs have lower (intrinsic gain) than BJTs The very thin oxide layer needs protection Power consumption increases with switching speed dv i C C dt V t 5 V, 1 pf, 1 ns i ma A. Kruger MOSFETs, Page-3

4 MOS Capacitor Under Bias Parallel plate capacitor V E d (V/m) Very thin insulator MOS capacitor with negative gate bias Note direction of electric field Holes accumulate A. Kruger MOSFETs, Page-4

5 MOS Capacitor Under Bias MOS capacitor with positive gate bias Note direction of electric field MOS capacitor with induced space-charge due (moderate positive gate bias) MOS capacitor with induced space-charge and induced electron inversion layer (larger positive gate bias) A. Kruger MOSFETs, Page-5

6 MOS Capacitor: n-type Substrate p-substrate MOS capacitor One can also construct n-substrate MOS capacitors Hole inversion layer forms at large negative bias voltages A. Kruger MOSFETs, Page-6

7 n-channel Enhancement Mode MOSFET Sect Oxide Gate Source rain Channel Oxide Heavily doped n + (good conductor) Heavily doped n + (good conductor) Substrate Note the symmetry. In principle, one can switch Source and rain. evice characteristics are influenced by material doping levels, t ox, W, and L. In semiconductor manufacture W, and L (specifically ratios of W/L) are easily manipulated to obtain desired characteristics. A. Kruger MOSFETs, Page-7

8 Basic Transistor Operation v GS < V TN, no conduction v GS > V TN, channel forms, conduction A. Kruger MOSFETs, Page-8

9 Body iode Body diode side effect of manufacturing process Tie substrate to most negative point in circuit to ensure body diode is always reverse-biased. This effectively removes it from the circuit (except for 2 nd order effects) A. Kruger MOSFETs, Page-9

10 n-channel Enhancement-Mode MOSFET Symbols Body or substrate shown What we will use Note the polarities Also used A. Kruger MOSFETs, Page-10

11 Question Name The Part n-channel MOSFET A. Kruger MOSFETs, Page-11

12 rain/source/channel etc. Source of n-channel s electrons +++ e - e - I n-channel or NMOS rain of n-channel s electrons Enhancement mode, n-channel MOS Field Effect Transistor A. Kruger MOSFETs, Page-12

13 Sect. 3.1 i Small gate voltage => thin channel, high channel resistance channel Channel Resistance Large gate voltage => thicker channel, lower channel resistance Voltage controllable resistance A. Kruger MOSFETs, Page-13

14 Small v S Linear resistor (Ohmic) Larger v S i vs v S slope not constant v v S = v S (sat) Channel pinch off GS v (sat) V S TN v S (sat) v GS V TN A. Kruger MOSFETs, Page-14

15 Family of i Versus v S Curves: Enhancement-Mode n-mosfet i K n [2( v GS V TN ) v S v 2 S ] i K n [ v V ] TN GS 2 K n WnC 2L ox C ox ox t ox K n = conduction parameter C ox, μ n = constant for fabrication technology K n ' k 2 n W L Process conduction parameter: k ' n C n ox Important concept: IC designers use W/L to control FET characteristics. A. Kruger MOSFETs, Page-15

16 p-channel Enhancement-Mode MOSFET See Sections and 3.15 A. Kruger MOSFETs, Page-16

17 n-channel epletion-mode MOSFET Sect Manufactured so an n-channel exists without an external v GS. External v GS can increase or decrease channel A. Kruger MOSFETs, Page-17

18 Family of i Versus v S Curves: epletion-mode n-mosfet Symbols Note FET is on even with no v GS A. Kruger MOSFETs, Page-18

19 Cross-Section of n-mosfet and p-mosfet p-well makes a local p-substrate Both transistors are used in the fabrication of Complementary MOS (CMOS) circuitry. A. Kruger MOSFETs, Page-19

20 Summary of I-V Relationships NMOS PMOS Nonsaturation v S < v S (sat) v S <v S (sat) i K n [2( v GS V TN ) v Saturation v S > v S (sat) v S > v S (sat) S v 2 S ] i K p [2( v SG V TP ) v S v 2 S ] i K n[ vgs VTN 2 ] Transition Pt. v S (sat) = v GS - V TN v S (sat) = v SG + V TP Enhancement Mode V TN > 0 V V TP < 0 V epletion Mode V TN < 0 V V TP > 0 V A. Kruger MOSFETs, Page-20

21 Channel Length Modulation: Early Voltage Sect A. Kruger MOSFETs, Page-21

22 Junction Field Effect Transistor (JFET) Sect See page 180 of textbook A. Kruger MOSFETs, Page-22

23 NMOS, PMOS, Enhancement, epletion, It is easy to get confused with all the different transistors By far the most common type of FET is the NMOS (n-channel), enhancement mode transistor A positive v GS turns it on i K [2( v n GS V TN ) v S v 2 S ] i K n [ v VTN ] GS 2 A. Kruger MOSFETs, Page-23

24 MOSFET dc Circuit Analysis Example 3.3 Calculate the drain current and the drain-to-source voltage for the common-source amplifier below. R 1 = 30K, R 2 = 20K, and R = 20K, K n = 0.1 ma/v 2, V TN = 1 V, and V = 5 V. There is no gate current, so finding the gate voltage and V GS are easy V GS V 5 Assume the transistor is biased in saturation region: I 2 K n[ VGS VTN ] I 0.1 [2 1] 2 0.1mA 3 rain-source voltage: V 5 I R K 3 V S Check assumption: V ( sat) V V 2 1 1V V (sat) FET is in saturation region S GS TN S V S dc equivalent A. Kruger MOSFETs, Page-24

25 Load-Line, Common Source NMOS Bias resistors, help set V GS and the quiescent or Q point Load Resistor V S V I Sect. 3.2 R Input Output Source is common to input and output: common source circuit I V R V R S Load-line equation I as a function of V S and load A. Kruger MOSFETs, Page-25

26 I 5 S 20 V 20 ma I V R V R S Q from quiescent A. Kruger MOSFETs, Page-26

27 I V R V R S A. Kruger MOSFETs, Page-27

28 I V R V R S A. Kruger MOSFETs, Page-28

29 Load Line, cont. Slope 1 R A. Kruger MOSFETs, Page-29

30 Enhancement Load evice v S v v GS S v S v GS V (sat) TN v S (sat) => Always in saturation region i K 2 n( vgs VTN ) K n( vs VTN ) 2 => Non-linear resistor A. Kruger MOSFETs, Page-30

31 Enhancement Load evice K n = 1 ma/v 2 V TN = 1 V Non-linear resistor A. Kruger MOSFETs, Page-31

32 Enhancement Load evice and NMOS river Active Load. View as a resistor A. Kruger MOSFETs, Page-32

33 Voltage Transfer Characteristics: NMOS Inverter with Enhancement Load evice v I < V TN v I > V TN A. Kruger MOSFETs, Page-33

34 NMOS Inverter with epletion Load evice Active Load. View as a resistor A. Kruger MOSFETs, Page-34

35 CMOS Inverter This is a PMOS transistor With and fixed, is constant, and That is, it is a constant current source. 1 From a signal perspective, it appears as a resistor with value, which can have a value in excess of 50K. A. Kruger MOSFETs, Page-35

36 CMOS Inverter From a signal perspective, it appears as a large resistor with value. The steep transition with CMOS is a consequence of the large value of the PMOS transistor s A. Kruger MOSFETs, Page-36

37 2-Input NMOS NOR Logic Gate Sect Truth table V 1 (V) V 2 (V) V O (V) 0 0 High 5 0 Low 0 5 Low 5 5 Low Logic NOR A. Kruger MOSFETs, Page-37

38 MOS Parameter Variation 2N7000 NMOS FET ifferent devices significantly different threshold voltages: 0.8 V (min), 3 V(max) Same device, different temperatures, significantly different threshold voltages All parameters vary with temperature, between samples of the same part number, and operating point. Variation is often much larger than with passive components. K n, K p, V TN, V TP,... A. Kruger MOSFETs, Page-38

39 MOSFET as Voltage-Controlled Switch V CC V CC V GS = 0 V GS = 0 No channel, no conduction, no current through load V CC V CC I I V GS >> V TN V GS >> V TN R S(ON) Maximum channel, low resistance between drain and source A. Kruger MOSFETs, Page-39

40 MOSFET as Voltage-Controlled Switch V CC I Small signal, low-power MOSFET V GS >> V TN R S(ON) R S(ON) in range 0.2 Ohm 20 Ohm I (max) > 200 ma Power MOSFETs R S(ON) ~1 milliohm S I (max) > 400 A G A. Kruger MOSFETs, Page-40

41 Current-Source Biasing I Q n-channel MOSFET biased with constant current source. V GS adjusts itself to match I Q A. Kruger MOSFETs, Page-41

42 Current Mirrors Sect. 3.4 I Q1? n-channel MOSFET biased with constant current source. V GS adjusts itself to match I Q A. Kruger MOSFETs, Page-42

43 Current Mirrors Sect. 3.4 A. Kruger MOSFETs, Page-43

44 Current Source: Compliance Voltage An ideal current source will source its current regardless of the voltage across it: - V + + V - Real current sources stop working properly below some minimum voltage (compliance voltage) across the terminals. V min A. Kruger MOSFETs, Page-44

45 NMOS Amplifier Slope 1 R A. Kruger MOSFETs, Page-45

46 NMOS Amplifier Sect Slope 1 R v o v i Coupling capacitor. Open circuit for dc, short for ac Large R => flat slope => high amplification A. Kruger MOSFETs, Page-46

47 Moving On to Chapter 4 Material A. Kruger MOSFETs, Page-47

48 NMOS Common-Source Circuit Slope 1 R Sect 4.1 A. Kruger MOSFETs, Page-48

49 NMOS Common-Source Circuit Slope 1 R Sect 4.1 A. Kruger MOSFETs, Page-49

50 Small Signal Concept FETs, BJTs are inherently non-linear devices NMOS FET, saturation region i K n v V 2 GS TN slope g m v lim GS 0 i v GS i v GS A/V g m = 1/(inremental resistance) i V GSQ VTN K ni Q gm 2K n 2 vgs g m is a function of the quiescent current. Circuit designer controls g m with I Q A. Kruger MOSFETs, Page-50

51 Small Signal Concept, cont. Slope changes with i r r o o i v S K V V I 1 n GSQ TN Q Early voltage A. Kruger MOSFETs, Page-51

52 NMOS Small-Signal Model Sect g m 2K n ( V GSQ V TN ) 2 K n I Q r o [ I Q ] 1 A. Kruger MOSFETs, Page-52

53 Common-Source Configuration Question: input signal changes with amplitude result in what changes at the output? Sect 4.3 Step 2: AC analysis: Coupling capacitor is assumed to be a short. C voltage supply is set to zero volts. Step 3: Small Signal analysis: Replace active components with small-signal (linear approximation) model. Step 1. C analysis: Coupling capacitor is assumed to be open. Find circuit Q-point values. Numerical value of will determine small-signal model parameters. Step 4: Analyze small signal (linear approximation) circuit with standard methods. A. Kruger MOSFETs, Page-53

54 Small-Signal Equivalent Circuit G S A. Kruger MOSFETs, Page-54

55 A. Kruger MOSFETs, Page-55 Small-Signal Voltage Gain Si i i o m i o v R R R R r g V V A ) ( ( ) o gs m o R r V V g i Si i i gs V R R R V i Si i i o m o V R R R R r g V ) ( 0 ) ( o o gs m R r V V g KCL at KCL at Voltage division at G Voltage division at G

56 C Load Line Page 218 Q-point near the middle of the saturation region for maximum symmetrical output voltage swing,. Small AC input signal for output response to be linear. A. Kruger MOSFETs, Page-56

57 Common-Source Amplifier with Source Resistor Sect Circuit Small Signal Model For now, ignore r o A. Kruger MOSFETs, Page-57

58 Common-Source Amplifier with Source Resistor What is the main purpose of this resistor? Source resistor minimizes stabilizes Q-point against transistor parameter variation A. Kruger MOSFETs, Page-58

59 Parameter Variation: 2N7000 NMOS FET Same device, different temperatures, significantly different threshold voltages ifferent devices significantly different threshold voltages: 0.8 V (min), 3 V(max) A. Kruger MOSFETs, Page-59

60 Effect of Source Resistor V TN = 1 V, V O = 2.83 V V TN = 0.9 V, V O = 2.43 V 10% Change in V TN resulted in about 14% change in V OQ A. Kruger MOSFETs, Page-60

61 Effect of Source Resistor V TN = 1V, V O = 3.77 V V TN = 0.9 V, V O = 3.6 V 10% Change in V TN resulted in about 4% change in V OQ A. Kruger MOSFETs, Page-61

62 Common-Source Amplifier with Source Resistor Sect For now, ignore r o A. Kruger MOSFETs, Page-62

63 Effect of Source Resistor V o g m V gs R Write KVL equation for gate-source loop: V i V gs g V R 0 m gs s V i gs g V R V g R V 1 m gs s gs m s Rewrite: V gs V 1 g i m R s A v V V o i gmr 1 g R m S A. Kruger MOSFETs, Page-63

64 Effect of Source Resistor A v gmr 1 g R m S Less sensitive to device variations, but small-signal gain is lower A g v m R More sensitive to device variations, but higher gain A. Kruger MOSFETs, Page-64

65 Common-Source Amplifier with Bypass Capacitor Sect Small-signal equivalent circuit A g v m R Constant current source sets Q- point and dramatically improves Q-point stability Capacitor connect source to ground at signal frequencies, and provides maximum gain. A. Kruger MOSFETs, Page-65

66 NMOS Source-Follower or Common rain Amplifier Sect 4.4 High resistances Medium/low resistance Source voltage follows the input => source follower A. Kruger MOSFETs, Page-66

67 Small-Signal Equivalent Circuit for Source Follower G S A. Kruger MOSFETs, Page-67

68 Small-Signal Equivalent Circuit for Source Follower Ohm s Law V o g V R r m gs s o KVL V gs V in V o Voltage ivision V in V i R 1 RSi R 2 R Si High-school algebra A v V V o i RS ro 1 RS g m r o R i Ri R Si Always< 1 A. Kruger MOSFETs, Page-68

69 etermining Output Impedance NMOS Source Follower Sect G S V i + - Procedure: set all independent small-signal voltage sources to zero, then apply a test voltage V x at the output terminal, and then determine the current I x that flows. KVL V gs V x KCL I x g m V gs V R x S V r x o 0 Combine I x V x g m 1 R S 1 r o High-school algebra V x RO 1 I g x m R S r o A. Kruger MOSFETs, Page-69

70 Common-Gate Circuit Sect S G Open circuit for AC Ground for AC Ground for AC A. Kruger MOSFETs, Page-70

71 A. Kruger MOSFETs, Page-71 Common-Gate Circuit Si m L m i o v R g R R g V V A 1 ) ( ) 1 )( ( Si m Si m L i O i R g R g R R R I I A G S

72 Comparison of 3 Basic FET Amplifiers Sect 4.6 Voltage Gain Current Gain Input Resistance Output Resistance Common Source A v > 1 R TH Moderate to high Source Follower A v 1 R TH Low Common Gate A v > 1 A i 1 Low Moderate to high A. Kruger MOSFETs, Page-72

73 NMOS Amplifier with Enhancement Load evice FET strapped such as this => always in saturation region, behaves as non-linear resistor A. Kruger MOSFETs, Page-73

74 FET strapped such as this => always in saturation region, behaves as non-linear resistor NMOS Amplifier with epletion Load evice Sect Steeper transition than with enhancement mode device => higher gain A. Kruger MOSFETs, Page-74

75 CMOS Common-Source Amplifier Current mirror Output resistance of the current mirror (very high) Sect g m 2 K I 2 K I n Q n Bias A g v m R A. Kruger MOSFETs, Page-75

76 Output Resistance of Current Mirror v SG = Constant r o =? r o = r op r op 1 I p Q 1 I p Bias Can be made very high A. Kruger MOSFETs, Page-76

77 CMOS Common Source R ( r rop ) on A g v mn ( r rop ) on Small-signal model A. Kruger MOSFETs, Page-77

78 Cascade Circuit Sect A. Kruger MOSFETs, Page-78

79 Cascade Circuit Sect Voltage Gain > 1, high input impedance Voltage Gain < 1, low output impedance A. Kruger MOSFETs, Page-79

80 Cascade Circuit Source-follower Common-source g m1? g m2? Perform C analysis g 2 m K n I Q A. Kruger MOSFETs, Page-80

81 Cascode Circuit Sect g m1? g m2? Perform C analysis g 2 m K n I Q A. Kruger MOSFETs, Page-81

82 CMOS Common Gate Page 257 Common source Common gate Why is this called a CMOS common gate amplifier? Common gate. Note where the input is now applied A. Kruger MOSFETs, Page-82

83 CMOS Common Gate r o2 G S A. Kruger MOSFETs, Page-83

84 CMOS Common Gate Output Resistance R O =? Procedure: set all independent, small-signal voltage sources to zero, then apply a test voltage V x at the output terminal, and then determine the current I x that flows. See Example 4.15 in textbook A. Kruger MOSFETs, Page-84

85 A. Kruger MOSFETs, Page-85

86 Simulation Tips for Micro-Cap SPICE Use $GENERIC_N part in Micro- Cap SPICE. The double-click to display properties menu. Substrate, connect to source, or better yet, to most negative part of circuit. A. Kruger MOSFETs, Page-86

87 After double-clicking, there is a form where one can change the MOSFETs properties. A. Kruger MOSFETs, Page-87

88 Change the properties to match the particular MOSFET. A. Kruger MOSFETs, Page-88

89 AC versus Transient Analysis c and dynamic dc analysis gives the quiescent currents and voltages. Transient analysis shown how the circuit response in time. Output is a plot of some circuit variable versus time similar to an oscilloscope. AC analysis provides the frequency response. ouble-click to set frequency, amplitude for AC- and transient analysis. A. Kruger MOSFETs, Page-89

90 Source Properties ouble-clicking on a voltage/current source brings up a dialog box where one can change its properties. A. Kruger MOSFETs, Page-90

91 Source Properties Amplitude used in AC analysis (Bode-type plots) and in many cases it makes sense to set this to 1. dc offset Amplitude used in transient (oscilloscope-type plots) and one would normally set this to match the actual input signal s amplitude. Frequency (in Hz) of the source, transient analysis. A. Kruger MOSFETs, Page-91

92 etermining Gain and Bandwidth Set AC magnitude of equal to one, run AC analysis, and plot A. Kruger MOSFETs, Page-92

93 etermining Gain and Bandwidth Output from AC analysis. The gain (far away from the pole) is The pole is where the amplitude drops by 3 db ( 70.7%) or Use cursor to find this point and the pole as0.526 Hz. A. Kruger MOSFETs, Page-93

94 etermining Add current source with AC magnitude set to 1. Keep in circuit (so the effect of its zero internal resistance is accounted for) but set its AC magnitude to 0. A. Kruger MOSFETs, Page-94

95 etermining Run AC analysis, plotting. The magnitude is equal to. In this instance it is 1.15K. A. Kruger MOSFETs, Page-95

96 etermining Add current source with AC magnitude set to 1. Keep in the circuit because it determines the frequency response. However, there is then no dc path for the current source. Fix this by adding a very large resistor in parallel. A. Kruger MOSFETs, Page-96

97 etermining Run AC analysis, plotting. The magnitude is equal to. In this instance it is K. A. Kruger MOSFETs, Page-97

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits Mosfet Review Sections of Chapter 3 &4 A. Kruger Mosfet Review, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width 1 10-6 m or less Thickness 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor

More information

Microelectronics Circuit Analysis and Design

Microelectronics Circuit Analysis and Design Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 In this chapter, we will: Study and understand the operation

More information

Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013

Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor In this chapter, we will: Study and understand the operation and characteristics of the various types

More information

BJT Amplifier. Superposition principle (linear amplifier)

BJT Amplifier. Superposition principle (linear amplifier) BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited

More information

Exam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage?

Exam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage? Exam 2 Name: Score /90 Question 1 Short Takes 1 point each unless noted otherwise. 1. Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance

More information

UNIT 3: FIELD EFFECT TRANSISTORS

UNIT 3: FIELD EFFECT TRANSISTORS FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are

More information

Three Terminal Devices

Three Terminal Devices Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering

More information

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known

More information

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET)

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET) Difference between BJTs and FETs Transistors can be categorized according to their structure, and two of the more commonly known transistor structures, are the BJT and FET. The comparison between BJTs

More information

INTRODUCTION: Basic operating principle of a MOSFET:

INTRODUCTION: Basic operating principle of a MOSFET: INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying

More information

Field-Effect Transistor

Field-Effect Transistor Philadelphia University Faculty of Engineering Communication and Electronics Engineering Field-Effect Transistor Introduction FETs (Field-Effect Transistors) are much like BJTs (Bipolar Junction Transistors).

More information

Homework Assignment 07

Homework Assignment 07 Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.

More information

Field Effect Transistor (FET) FET 1-1

Field Effect Transistor (FET) FET 1-1 Field Effect Transistor (FET) FET 1-1 Outline MOSFET transistors ntroduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Biasing Circuits and Examples Comparison between JFET and epletion-type

More information

EE70 - Intro. Electronics

EE70 - Intro. Electronics EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π

More information

Microelectronics Circuit Analysis and Design

Microelectronics Circuit Analysis and Design Neamen Microelectronics Chapter 4-1 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 4 Basic FET Amplifiers Neamen Microelectronics Chapter 4-2 In this chapter, we will: Investigate

More information

Field Effect Transistors (npn)

Field Effect Transistors (npn) Field Effect Transistors (npn) gate drain source FET 3 terminal device channel e - current from source to drain controlled by the electric field generated by the gate base collector emitter BJT 3 terminal

More information

Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1

Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Lecture 13 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Outline Continue MOSFET Qualitative Operation epletion-type MOSFET Characteristics Biasing Circuits and Examples Enhancement-type

More information

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

More information

Semiconductor Physics and Devices

Semiconductor Physics and Devices Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because

More information

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Lecture 15 Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Outline MOSFET transistors Introduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Comparison between JFET and

More information

Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

More information

MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I

MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I MEASUREMENT AND INSTRUMENTATION STUDY NOTES The MOSFET The MOSFET Metal Oxide FET UNIT-I As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available

More information

Chapter 5: Field Effect Transistors

Chapter 5: Field Effect Transistors Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits

More information

Chapter 6: Field-Effect Transistors

Chapter 6: Field-Effect Transistors Chapter 6: Field-Effect Transistors FETs vs. BJTs Similarities: Amplifiers Switching devices Impedance matching circuits Differences: FETs are voltage controlled devices. BJTs are current controlled devices.

More information

Gechstudentszone.wordpress.com

Gechstudentszone.wordpress.com UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits

More information

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body

More information

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH) EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND

More information

Field Effect Transistors

Field Effect Transistors Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits

More information

Unit III FET and its Applications. 2 Marks Questions and Answers

Unit III FET and its Applications. 2 Marks Questions and Answers Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric

More information

Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor

Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,

More information

Topic 2. Basic MOS theory & SPICE simulation

Topic 2. Basic MOS theory & SPICE simulation Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/

More information

Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor

Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS Most of the content is from the textbook: Electronic devices and circuit theory, Robert

More information

Phy 335, Unit 4 Transistors and transistor circuits (part one)

Phy 335, Unit 4 Transistors and transistor circuits (part one) Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit

More information

EE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits

EE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits EE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits Objective This experiment is designed for students to get familiar with the basic properties

More information

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Lecture 16 Complementary metal oxide semiconductor (CMOS) CMOS 1-1 Outline Complementary metal oxide semiconductor (CMOS) Inverting circuit Properties Operating points Propagation delay Power dissipation

More information

ECE/CoE 0132: FETs and Gates

ECE/CoE 0132: FETs and Gates ECE/CoE 0132: FETs and Gates Kartik Mohanram September 6, 2017 1 Physical properties of gates Over the next 2 lectures, we will discuss some of the physical characteristics of integrated circuits. We will

More information

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model Week 9a OUTLINE MOSFET I vs. V GS characteristic Circuit models for the MOSFET resistive switch model small-signal model Reading Rabaey et al.: Chapter 3.3.2 Hambley: Chapter 12 (through 12.5); Section

More information

Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10

Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10 Index A absolute value, 308 additional pole, 271 analog multiplier, 190 B BiCMOS,107 Bode plot, 266 base-emitter voltage, 16, 50 base-emitter voltages, 296 bias current, 111, 124, 133, 137, 166, 185 bipolar

More information

Homework Assignment 06

Homework Assignment 06 Homework Assignment 06 Question 1 (Short Takes) One point each unless otherwise indicated. 1. Consider the current mirror below, and neglect base currents. What is? Answer: 2. In the current mirrors below,

More information

Solid State Devices & Circuits. 18. Advanced Techniques

Solid State Devices & Circuits. 18. Advanced Techniques ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular

More information

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic.

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic. Digital Electronics Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region Positive Logic Logic 1 Negative Logic Logic 0 Voltage Transition Region Transition

More information

Common-Source Amplifiers

Common-Source Amplifiers Lab 2: Common-Source Amplifiers Introduction The common-source stage is the most basic amplifier stage encountered in CMOS analog circuits. Because of its very high input impedance, moderate-to-high gain,

More information

Homework Assignment 07

Homework Assignment 07 Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.

More information

Laboratory #5 BJT Basics and MOSFET Basics

Laboratory #5 BJT Basics and MOSFET Basics Laboratory #5 BJT Basics and MOSFET Basics I. Objectives 1. Understand the physical structure of BJTs and MOSFETs. 2. Learn to measure I-V characteristics of BJTs and MOSFETs. II. Components and Instruments

More information

Field - Effect Transistor

Field - Effect Transistor Page 1 of 6 Field - Effect Transistor Aim :- To draw and study the out put and transfer characteristics of the given FET and to determine its parameters. Apparatus :- FET, two variable power supplies,

More information

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved. Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the

More information

8. Characteristics of Field Effect Transistor (MOSFET)

8. Characteristics of Field Effect Transistor (MOSFET) 1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors

More information

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s. UNIT-I FIELD EFFECT TRANSISTOR 1. Explain about the Field Effect Transistor and also mention types of FET s. The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their

More information

Prof. Paolo Colantonio a.a

Prof. Paolo Colantonio a.a Prof. Paolo Colantonio a.a. 20 2 Field effect transistors (FETs) are probably the simplest form of transistor, widely used in both analogue and digital applications They are characterised by a very high

More information

EE 230 Lab Lab 9. Prior to Lab

EE 230 Lab Lab 9. Prior to Lab MOS transistor characteristics This week we look at some MOS transistor characteristics and circuits. Most of the measurements will be done with our usual lab equipment, but we will also use the parameter

More information

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

MODULE-2: Field Effect Transistors (FET)

MODULE-2: Field Effect Transistors (FET) FORMAT-1B Definition: MODULE-2: Field Effect Transistors (FET) FET is a three terminal electronic device used for variety of applications that match with BJT. In FET, an electric field is established by

More information

Homework Assignment 09

Homework Assignment 09 Question 1 (2 points each unless noted otherwise) Homework Assignment 09 1. For SPICE, Explain very briefly the difference between the multiplier M and Meg, as in a resistor has value 2M versus a resistor

More information

Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology

Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor

Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Introduction Why we call it Transistor? The name came as an

More information

Field-Effect Transistors

Field-Effect Transistors R L 2 Field-Effect Transistors 2.1 BAIC PRINCIPLE OF JFET The eld-effect transistor (FET) is an electric- eld (voltage) operated transistor, developed as a semiconductor equivalent of the vacuum-tube device,

More information

EE301 Electronics I , Fall

EE301 Electronics I , Fall EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

More information

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) LONG QUESTIONS (10 MARKS) 1. Draw the construction diagram and explain the working of P-Channel JFET. Also draw the characteristics curve and transfer

More information

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor transistors for logic and memory Reading: Kasap 6.6-6.8 Vacuum tube diodes 2 Thermionic emission from cathode Electrons collected

More information

Lecture 3: Transistors

Lecture 3: Transistors Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point. Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring

More information

Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs)

Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Device Structure N-Channel MOSFET Providing electrons Pulling electrons (makes current flow) + + + Apply positive voltage to gate: Drives away

More information

Radivoje Đurić, 2015, Analogna Integrisana Kola 1

Radivoje Đurić, 2015, Analogna Integrisana Kola 1 OTA-output buffer 1 According to the types of loads, the driving capability of the output stages differs. For switched capacitor circuits which have high impedance capacitive loads, class A output stage

More information

6.012 Microelectronic Devices and Circuits

6.012 Microelectronic Devices and Circuits Page 1 of 13 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Microelectronic Devices and Circuits Final Eam Closed Book: Formula sheet provided;

More information

Chapter 1. Introduction

Chapter 1. Introduction EECS3611 Analog Integrated Circuit esign Chapter 1 Introduction EECS3611 Analog Integrated Circuit esign Instructor: Prof. Ebrahim Ghafar-Zadeh, Prof. Peter Lian email: egz@cse.yorku.ca peterlian@cse.yorku.ca

More information

Improving Amplifier Voltage Gain

Improving Amplifier Voltage Gain 15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance

More information

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration)

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration) Revised 2/16/2007 ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration) *NOTE: The text mentioned below refers to the Sedra/Smith, 5th edition.

More information

Summary of Lecture Notes on Metal-Oxide-Semiconductor, Field-Effect Transistors (MOSFETs)

Summary of Lecture Notes on Metal-Oxide-Semiconductor, Field-Effect Transistors (MOSFETs) Mani Vaidyanathan 1 Summary of Lecture Notes on Metal-Oxide-Semiconductor, Field-Effect Transistors (MOSFETs) Introduction 1. We began by asking, Why study MOSFETs? The answer is, Because MOSFETs are the

More information

6. Field-Effect Transistor

6. Field-Effect Transistor 6. Outline: Introduction to three types of FET: JFET MOSFET & CMOS MESFET Constructions, Characteristics & Transfer curves of: JFET & MOSFET Introduction The field-effect transistor (FET) is a threeterminal

More information

University of Pittsburgh

University of Pittsburgh University of Pittsburgh Experiment #4 Lab Report MOSFET Amplifiers and Current Mirrors Submission Date: 07/03/2018 Instructors: Dr. Ahmed Dallal Shangqian Gao Submitted By: Nick Haver & Alex Williams

More information

MOSFET & IC Basics - GATE Problems (Part - I)

MOSFET & IC Basics - GATE Problems (Part - I) MOSFET & IC Basics - GATE Problems (Part - I) 1. Channel current is reduced on application of a more positive voltage to the GATE of the depletion mode n channel MOSFET. (True/False) [GATE 1994: 1 Mark]

More information

Design cycle for MEMS

Design cycle for MEMS Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor

More information

Solid State Devices- Part- II. Module- IV

Solid State Devices- Part- II. Module- IV Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the

More information

Field Effect Transistors

Field Effect Transistors Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,

More information

Field Effect Transistors

Field Effect Transistors Field Effect Transistors LECTURE NO. - 41 Field Effect Transistors www.mycsvtunotes.in JFET MOSFET CMOS Field Effect transistors - FETs First, why are we using still another transistor? BJTs had a small

More information

Basic Circuits. Current Mirror, Gain stage, Source Follower, Cascode, Differential Pair,

Basic Circuits. Current Mirror, Gain stage, Source Follower, Cascode, Differential Pair, Basic Circuits Current Mirror, Gain stage, Source Follower, Cascode, Differential Pair, CCS - Basic Circuits P. Fischer, ZITI, Uni Heidelberg, Seite 1 Reminder: Effect of Transistor Sizes Very crude classification:

More information

BJT Circuits (MCQs of Moderate Complexity)

BJT Circuits (MCQs of Moderate Complexity) BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r

More information

Physics 160 Lecture 11. R. Johnson May 4, 2015

Physics 160 Lecture 11. R. Johnson May 4, 2015 Physics 160 Lecture 11 R. Johnson May 4, 2015 Two Solutions to the Miller Effect Putting a matching resistor on the collector of Q 1 would be a big mistake, as it would give no benefit and would produce

More information

EE105 Fall 2015 Microelectronic Devices and Circuits

EE105 Fall 2015 Microelectronic Devices and Circuits EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of

More information

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression

More information

Improved Inverter: Current-Source Pull-Up. MOS Inverter with Current-Source Pull-Up. What else could be connected between the drain and V DD?

Improved Inverter: Current-Source Pull-Up. MOS Inverter with Current-Source Pull-Up. What else could be connected between the drain and V DD? Improved Inverter: Current-Source Pull-Up MOS Inverter with Current-Source Pull-Up What else could be connected between the drain and? Replace resistor with current source I SUP roc i D v IN v OUT Find

More information

Lecture - 18 Transistors

Lecture - 18 Transistors Electronic Materials, Devices and Fabrication Dr. S. Prarasuraman Department of Metallurgical and Materials Engineering Indian Institute of Technology, Madras Lecture - 18 Transistors Last couple of classes

More information

EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1

EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- , Raj Kamal, 1 EDC UNIT IV- Transistor and FET Characteristics Lesson-9: JFET and Construction of JFET 2008 EDC Lesson 9- ", Raj Kamal, 1 1. Transistor 2008 EDC Lesson 9- ", Raj Kamal, 2 Transistor Definition The transferred-resistance

More information

12/01/2009. Practice with past exams

12/01/2009. Practice with past exams EE40 Final Exam Review Prof. Nathan Cheung 12/01/2009 Practice with past exams http://hkn.eecs.berkeley.edu/exam/list/?examcourse=ee%2040 Slide 1 Overview of Course Circuit components: R, C, L, sources

More information

Chapter 4. CMOS Cascode Amplifiers. 4.1 Introduction. 4.2 CMOS Cascode Amplifiers

Chapter 4. CMOS Cascode Amplifiers. 4.1 Introduction. 4.2 CMOS Cascode Amplifiers Chapter 4 CMOS Cascode Amplifiers 4.1 Introduction A single stage CMOS amplifier cannot give desired dc voltage gain, output resistance and transconductance. The voltage gain can be made to attain higher

More information

(a) BJT-OPERATING MODES & CONFIGURATIONS

(a) BJT-OPERATING MODES & CONFIGURATIONS (a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base

More information

ECE 340 Lecture 40 : MOSFET I

ECE 340 Lecture 40 : MOSFET I ECE 340 Lecture 40 : MOSFET I Class Outline: MOS Capacitance-Voltage Analysis MOSFET - Output Characteristics MOSFET - Transfer Characteristics Things you should know when you leave Key Questions How do

More information

UNIT 3 Transistors JFET

UNIT 3 Transistors JFET UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It

More information

Lecture 14. Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1

Lecture 14. Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1 Lecture 14 Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1 Outline Introduction to FET transistors Types of FET Transistors Junction Field Effect Transistor (JFET) Characteristics Construction

More information

Solid State Device Fundamentals

Solid State Device Fundamentals Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)

More information

Microelectronic Circuits II. Ch 10 : Operational-Amplifier Circuits

Microelectronic Circuits II. Ch 10 : Operational-Amplifier Circuits Microelectronic Circuits II Ch 0 : Operational-Amplifier Circuits 0. The Two-stage CMOS Op Amp 0.2 The Folded-Cascode CMOS Op Amp CNU EE 0.- Operational-Amplifier Introduction - Analog ICs : operational

More information

Questions on JFET: 1) Which of the following component is a unipolar device?

Questions on JFET: 1) Which of the following component is a unipolar device? Questions on JFET: 1) Which of the following component is a unipolar device? a) BJT b) FET c) DJT d) EFT 2) Current Conduction in FET takes place due e) Majority charge carriers only f) Minority charge

More information

Lecture 17. Field Effect Transistor (FET) FET 1-1

Lecture 17. Field Effect Transistor (FET) FET 1-1 Lecture 17 Field Effect Transistor (FET) FET 1-1 Outline ntroduction to FET transistors Comparison with BJT transistors FET Types Construction and Operation of FET Characteristics Of FET Examples FET 1-2

More information

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage

More information

FET. Field Effect Transistors ELEKTRONIKA KONTROL. Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya. p + S n n-channel. Gate. Basic structure.

FET. Field Effect Transistors ELEKTRONIKA KONTROL. Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya. p + S n n-channel. Gate. Basic structure. FET Field Effect Transistors ELEKTRONIKA KONTROL Basic structure Gate G Source S n n-channel Cross section p + p + p + G Depletion region Drain D Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya S Channel

More information

Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET).

Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Q. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Answer: N-Channel Junction Field Effect Transistor (JFET) Construction: Drain(D)

More information

d. Can you find intrinsic gain more easily by examining the equation for current? Explain.

d. Can you find intrinsic gain more easily by examining the equation for current? Explain. EECS140 Final Spring 2017 Name SID 1. [8] In a vacuum tube, the plate (or anode) current is a function of the plate voltage (output) and the grid voltage (input). I P = k(v P + µv G ) 3/2 where µ is a

More information

Radio Frequency Electronics

Radio Frequency Electronics Radio Frequency Electronics Active Components II Harry Nyquist Born in 1889 in Sweden Received B.S. and M.S. from U. North Dakota Received Ph.D. from Yale Worked and Bell Laboratories for all of his career

More information

MOS TRANSISTOR THEORY

MOS TRANSISTOR THEORY MOS TRANSISTOR THEORY Introduction A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage applied to the

More information