Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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1 l l l l l Surface Mount (IRFR20N) Straight Lead (IRFU20N) dvanced Process Technology Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. G IRFR/U20N HEXFET Power MOSFET S P B V SS = 00V R S(on) = 0.2Ω I = 9.4 The -PK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to.5 watts are possible in typical surface mount applications. -PK TO-252 I-PK TO-25 bsolute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V 0V 9.4 T C = 00 C Continuous rain Current, V 0V 6.6 I M Pulsed rain Current 38 C = 25 C Power issipation 48 W Linear erating Factor 0.32 W/ C V GS Gate-to-Source Voltage ± 20 V E S Single Pulse valanche Energy 9 mj I R valanche Current 5.7 E R Repetitive valanche Energy 4.8 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range Soldering Temperature, for 0 seconds 300 (.6mm from case ) C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 3. R θj Junction-to-mbient (PCB mount) ** 50 C/W R θj Junction-to-mbient 0 5//98
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 00 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient 0.2 V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance 0.2 V GS = 0V, I = 5.6 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 2.7 S V S = 25V, I = 5.7 I SS rain-to-source Leakage Current 25 V S = 00V, V GS = 0V µ 250 V S = 80V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 00 V GS = 20V n Gate-to-Source Reverse Leakage -00 V GS = -20V Q g Total Gate Charge 25 I = 5.7 Q gs Gate-to-Source Charge 4.8 nc V S = 80V Q gd Gate-to-rain ("Miller") Charge V GS = 0V, See Fig. 6 and 3 t d(on) Turn-On elay Time 4.5 V = 50V t r Rise Time 23 I ns = 5.7 t d(off) Turn-Off elay Time 32 R G = 22Ω t f Fall Time 23 R = 8.6Ω, See Fig. 0 L Internal rain Inductance 4.5 nh Between lead, 6mm (0.25in.) L S Internal Source Inductance 7.5 G from package and center of die contact C iss Input Capacitance 330 V GS = 0V C oss Output Capacitance 92 pf V S = 25V C rss Reverse Transfer Capacitance 54 ƒ =.0MHz, See Fig. 5 S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 9.4 (Body iode) showing the I SM Pulsed Source Current integral reverse G 38 (Body iode) p-n junction diode. S V S iode Forward Voltage.3 V T J = 25 C, I S = 5.5, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 5.7 Q rr Reverse RecoveryCharge nc di/dt = 00/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) V = 25V, starting T J = 25 C, L = 4.7mH R G = 25Ω, I S = 5.7. (See Figure 2) ƒ I S 5.7, di/dt 240/µs, V V (BR)SS, T J 75 C Pulse width 300µs; duty cycle 2% This is applied for I-PK, Ls of -PK is measured between lead and center of die contact Uses IRF520N data and test conditions ** When mounted on " square PCB (FR-4 or G-0 Material ). For recommended footprint and soldering techniques refer to application note #N
3 I, rain-to-source Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 25 C V S, rain-to-source Voltage (V) I, rain-to-source Current () 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T C = 75 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics and I, rain-to-source Current () 00 0 T = 25 C J T = 75 C J R S(on), rain-to-source On Resistance (Norm alized) 0.5 V S= 50V 20µs PULSE W ITH V GS = 0V V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) I = 9.5 Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd V S, rain-to-source Voltage (V) V, Gate-to-Source Voltage (V) GS I = 5.7 V S = 80V V S = 50V V S = 20V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J I, rain Current () 00 0 OP ER TIO N IN TH IS RE LIM ITE BY R S(on) 0µs 00µs ms 0ms V GS = 0V V S, Source-to-rain Voltage (V) T C = 25 C T J = 75 C Single P u lse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 0.0 V S R I, rain Current () T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. Case Temperature Fig 0a. Switching Time Test Circuit V S 90% R G V GS 5.0V Pulse Width µs uty Factor 0. %.U.T. 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms - V 0 Thermal Response (Z thjc ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thjc TC t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 R G V S 0V tp I S L.U.T 0.0Ω Fig 2a. Unclamped Inductive Test Circuit tp 5V RIVER - V (BR)SS V E S, Single Pulse valanche Energy (mj) I TOP BOTTOM 5.7 V = 25V Starting T J, Junction Temperature ( C) Fig 2c. Maximum valanche Energy Vs. rain Current I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q G.U.T. V - S V GS V G 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6
7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-pplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 4. For N-Channel HEXFETS 7
8 Package Outline TO-252 Outline imensions are shown in millimeters (inches) 5.46 (.25) 5.2 (.205) 6.73 (.265) 6.35 (.250) (.050) 0.88 (.035) 2.38 (.094) 2.9 (.086).4 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.08) 4.02 (.040).64 (.025).52 (.060).5 (.045) 2X.4 (.045) 0.76 (.030) 2 3 3X 6.22 (.245) 5.97 (.235) - B (.035) 0.64 (.025) 0.25 (.00) M M B 0.42 (.40) 9.40 (.370) 6.45 (.245) 5.68 (.224) 0.5 (.020) M IN (.023) 0.46 (.08) LE SSIGNMENTS - G TE 2 - R IN 3 - SOURCE 4 - R IN 2.28 (.090) 4.57 (.80) NOTES: IMENSIONING & TOLERNCING PER NSI Y4.5M, CONTROLLING IMENSION : INCH. 3 C O N FO R M S TO JE E C O U TLIN E TO IMENSIONS SHOW N RE BEFORE SOLER IP, SO L ER IP M X. 0.6 (.006). Part Marking Information TO-252 (-PRK) EXMPLE : THIS IS N IRFR20 W ITH SSEM BLY LOT COE 9UP INTERNTIONL RECTIFIER LO GO IRFR 20 FIRST PORTION OF PRT NUMBER 9U P SSEMBLY SECON PORTION LOT COE OF PRT NUMBER 8
9 Package Outline TO-25 Outline imensions are shown in millimeters (inches) 5.46 (.25) 5.2 (.205).52 (.060).5 (.045) 6.73 (.265) 6.35 (.250) (.245) 5.97 (.235).27 (.050) 0.88 (.035) 2.38 (.094) 2.9 (.086) 0.58 (.023) 0.46 (.08) 6.45 (.245) 5.68 (.224) LE SSIGNMENTS - G TE 2 - R IN 3 - SOURCE 4 - R IN B (.090).9 (.075) 9.65 (.380) 8.89 (.350) NOTES: IMENSIONING & TOLERNCING PER NSI Y4.5M, CONTROLLING IMENSION : INCH. 3 C O N FO R M S TO J E EC O U TLIN E TO IMENSIONS SHOW N RE BEFORE SOLER IP, SO LE R IP M X. 0.6 (.006). 3X.4 (.045) 0.76 (.030) 2.28 (.090) 2X 3X 0.89 (.035) 0.64 (.025) 0.25 (.00) M M B.4 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.08) Part Marking Information TO-25 (I-PRK) EXMPLE : THIS IS N IRFU20 W ITH SSEMBLY LOT COE 9UP INTERNTIONL RECTIFIER LO GO SSEMBLY LOT COE IRFU 20 9U P FIRST PORTION OF PRT NUMBER SECON PORTION OF PRT NUMBER 9
10 Tape & Reel Information TO-252 TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEE IRECTION 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOW N IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EI-48 & EI INC H NOTES :. OU TLINE CONFO RMS TO EI mm WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 5 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 007 Borgaro, Torino Tel: IR FR EST: 7 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: IR SOUTHEST SI: 35 Outram Road, #0-02 Tan Boon Liat Building, Singapore 6907 Tel: ata and specifications subject to change without notice. 5/98 0
I, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
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l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description
More informationAbsolute Maximum Ratings
l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
More informationN-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET SO-8
l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs
More informationV DSS R DS(on) max Qg 30V GS = 10V 44nC
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
More informationIRF3315 APPROVED. HEXFET Power MOSFET V DSS = 150V. R DS(on) = 0.07Ω I D = 27A
l l l l l Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R
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SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationPRELIMINARY. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PRELIMINRY PD- 9.336 IRFR/U024N HEXFET Power MOSFET Utra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V
More informationIRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
More informationIRLMS1503. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
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dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
More informationIRFDC20. HEXFET Power MOSFET PD V DSS = 600V. R DS(on) = 4.4Ω I D = 0.32A
HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1228 IRFDC20 V DSS = 600V R
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationSMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
More informationIRLZ44N PD B. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 47A
Logic-Leve Gate rive dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced
More informationV DSS R DS(on) max I D. 20V GS = 10V 20A. 160 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters in Networking Systems l Lead-Free S S 2 IRF377PbF HEXFET Power MOSFET 8 7 P - 9579
More informationSMPS MOSFET. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
P-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications V SS R S(on) max I l High frequency C-C converters 50V 0.28Ω@V GS = 0V.9A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD-93772A HEXFET Power MOSFET V DSS Rds(on) max I D 400V.0Ω 5.5A Benefits l Low Gate
More informationSMPS MOSFET. V DSS Rds(on) max I D
pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9878C IRF830 HEXFET Power MOSFET V DSS Rds(on) max I D 500V.40Ω 5.0 Benefits l
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
More informationAbsolute Maximum Ratings. Thermal Resistance Ratings. 1 SO-8. Top View. 100% R G Tested. Symbol Parameter Typ Max Units
Generation V Technoogy Utra Low On-Resistance N-Channe Mosfet Surface Mount vaiabe in Tape & Ree ynamic dv/dt Rating Fast Switching 00% R G Tested Lead-Free escription Fifth Generation HEXFETs from Internationa
More informationParameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C
HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationV DSS R DS(on) max I D. 30V GS = 10V 13A. 100 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Control FET for Notebook Processor Power l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems 8 S 2 7 S
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l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
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Features l Advanced Process Technology l Key Parameters Optimized for PP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power issipation in PP Sustain, Energy Recovery
More informationIRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View
l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
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Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
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SMPS MOSFET PD 980 IRFIB7N50 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
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SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
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Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier
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Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (
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l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
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